CN104202010A - Hollow cavity-type film bulk acoustic resonator and production method for same - Google Patents
Hollow cavity-type film bulk acoustic resonator and production method for same Download PDFInfo
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Abstract
The invention relates to a hollow cavity-type film bulk acoustic resonator and a production method for the same. The acoustic resonator comprises a silicon substrate, a sacrificial layer and a piezoelectric thin film transducer stacking structure, wherein the piezoelectric thin film transducer stacking structure sequentially comprises a support layer, a bottom electrode, a piezoelectric layer and a top electrode from bottom to top; a release window array penetrates through the piezoelectric thin film transducer stacking structure, and forms a release channel; a hollow portion is arranged at the middle of the sacrificial layer, and forms an air cavity with the lower silicon substrate and the upper support layer; the air cavity is formed by releasing the sacrificial layer located on the front surface of the silicon substrate, and the release channel is composed of the release window array penetrating through the piezoelectric thin film transducer stacking structure. According to the functions and structure characteristics of an FBAR air gap, the production method disclosed by the invention is beneficial to improve the manufacturability, and capable of rapidly and cleanly forming the cavity, and reducing the dimensions of a chip.
Description
Technical field
The present invention relates to field of microelectronic devices, specifically refer to a kind of hollow out cavity type thin film bulk acoustic resonator and preparation method thereof, its manufacture method is conducive to improve the manufacturability of thin film bulk acoustic resonator, and formation cavity that can be quick, clean, reduces chip size.
Background technology
In recent years along with the rapid growth of wireless communication system (as palmtop PC, mobile phone, GPS receiver, radar, satellite communication and various data communication) demand, promote the linked development of high-frequency element, expedited the emergence of higher frequency, bandwidth is larger, speed signal transmission faster application.The multifunction of wireless terminal device is also more and more higher to the requirement of frequency device, progressively trends towards microminiaturization, low-power consumption, low cost, integrated and high-performance etc.
Traditional rf frequency device mainly adopts microwave ceramics technology and surface acoustic wave (SAW) technology.Wherein adopt the main weak point of device of microwave ceramics technology: (1) operating rate is slow, (2) volume is bigger than normal, and (3) cannot be integrated with RFIC circuit; The main weak point of surface acoustic wave (SAW) filter: the limitation of complexity of (1) interdigital electrode technique the application of SAW filter in high frequency field, (2) insertion loss is large, (3) power capacity is little, (4) and standard CMOS process are difficult to integrated.Film acoustic bulk wave resonator (FBAR) has overcome the shortcoming of conventional radio frequency device, have: (1) operating frequency high (reaching as high as 20GHz), (2) volume is little, and (3) loss is low, Q value is high, (4) with CMOS process compatible, can form system-on-a-chip with peripheral circuit.
Thin film bulk acoustic resonator (FBAR) is a kind of device that utilizes acoustic resonance to realize electricity frequency-selecting.The basic structure of FBAR is the sandwich structure of top electrode-piezoelectric membrane-hearth electrode, its operation principle is: when applying the signal of telecommunication on electrode time, the signal of telecommunication is converted into acoustic signals by the inverse piezoelectric effect of piezoelectric membrane, in the time that the propagation distance of sound wave in piezoelectric membrane is just in time the odd-multiple of half-wavelength, will produce resonance, then by the piezoelectric effect of piezoelectric membrane, the acoustical signal at resonance frequency place is converted into signal of telecommunication output; Due to the sound wave loss minimum at resonance frequency place, make the acoustical signal of this frequency can pass through piezoelectric thin film layer, and the signal of other frequencies is blocked, thereby only there is the signal of telecommunication of characteristic frequency in output output.
The development of thin film bulk acoustic resonator mainly concentrates on the developed country such as the U.S., Korea S, U.S.'s Avago (Avago) is the company that carries out the earliest in the world FBAR development, its FBAR filter shipment amount just reached 200,000,000 as far back as 2006, and that in its patent and Related product, adopt is exactly cavity type FBAR.FBAR cavity knot
The processing of structure is very important, and the air layer acoustic impedance that cavity provides is zero, and sound wave is through air layer total reflection, and in FBAR, vibration produces resonance, thereby realizes the filter function of FBAR.The method of the formation cavity of mentioning in its patent (EP1012888B1): (1) adopts the sacrifice layer of Surface-Micromachining in the middle of Grown one deck concentrates on substrate; (2) grow successively on substrate supporting layer, hearth electrode, piezoelectric layer, top electrode; (3) releasing sacrificial layer, forms cavity.In the method, because sacrifice layer is positioned on substrate, the transducer stack stack structure being processed to form is step, very high to supporting layer requirement of strength, and piezoelectric layer and electrode easily distort at step edge place, causes stress concentration phenomenon and causes fracture.In the technique of the cavity type FBAR that Samsung of Korea S (SAMSUNG ELECTRONICS) mentions in patent (EP1471636B1), the method that adopts sacrifice layer to fill shallow slot realizes the reserved of sacrifice layer, but in reserved technique, need the sacrifice layer to exceeding shallow slot part to carry out polishing, cmp (CMP) glossing complexity, the precision conventionally adopting is difficult to control; Sacrifice layer that its patent (EP1180494A2) is mentioned discharges window and is positioned at outside FBAR, discharges the cavity structure that forms than large many of FBAR size, has increased the size of FBAR; Its patent (EP1598933B1) is mentioned the release by realize sacrifice layer at silicon substrate back-etching corrosion passage, forms cavity structure; But substrate thickness is larger, it is long that etched substrate forms corrosion channel time, and the etching termination time is difficult to control.In recent years, China makes great progress in the development of cavity type FBAR.The cavity type FBAR manufacture method of mentioning in the patent (CN102931941A) of Institutes Of Technology Of Tianjin is: first prepare porous silicon by the air-gap position corrosion of electrochemical process mask on silicon substrate, then complete successively the processing of supporting layer, hearth electrode, piezoelectric layer, top electrode, finally adopt the wet-etching technology in IC technique, erode porous silicon, discharge air-gap structure.This kind of method need to first be prepared porous silicon, and wants a large amount of silicon substrate material of etching, its complex process, length consuming time.In addition, the FBAR manufacture method of mentioning in the patent of China Electronics Technology Group Corporation No.26 Research Institute (CN101977026A) is: the SOI substrate with cavity and top layer silicon bonding are formed to cavity, and in top layer silicon, process piezoelectric thin film transducer structure.Although this kind of method overcome the problem that sacrifice layer discharges, it has increased extra bonding technology; Transducer need to be machined in directly over the cavity forming by bonding technology, and aiming at the error occurring can affect the resonance characteristic of thin film bulk acoustic resonator.
Summary of the invention
The present invention, for solving the problems of the technologies described above, has proposed a kind of hollow out cavity type thin film bulk acoustic resonator and preparation method thereof, can improve the manufacturability of cavity type thin film bulk acoustic resonator, and quick, clean formation cavity, reduces chip size.
Technical scheme of the present invention is:
A kind of hollow out cavity type thin film bulk acoustic resonator, is characterized in that: comprise silicon substrate, sacrifice layer and piezoelectric thin film transducer stacked structure, piezoelectric thin film transducer stacked structure comprises supporting layer, hearth electrode, piezoelectric layer, top electrode from the bottom up successively; Described piezoelectric thin film transducer stacked structure is released window array to be run through, and discharges window array and has formed release channel; In the middle of described sacrifice layer, be provided with hollow space, this hollow space and silicon substrate below and supporting layer above form air chamber.
Described air chamber is to import corrosive liquid by the release channel of sacrifice layer sacrifice layer etching is formed.
The release window of described piezoelectric layer is less than the release window of hearth electrode, for preventing technical process top electrode and hearth electrode short circuit.
Described sacrifice layer is the silicon dioxide that is positioned at silicon substrate front forming by thermal oxidation silicon substrate, has overcome cmp (CMP) technique of traditional sacrifice layer complexity when reserved; Sacrificial layer structure is smooth, without step, avoided adopting Surface-Micromachining processing to concentrate on the sacrifice layer in the middle of substrate, overcome the stress concentration phenomenon at the step edge place of the piezoelectric layer that processing produces thus and electrode.
Described release channel runs through piezoelectric thin film transducer stacked structure, and is positioned at the front of thin film bulk acoustic resonator, there is no occupying volume outer area, can reduce chip size.
Described release window array is positioned at the front of thin film bulk acoustic resonator, and the sacrifice layer area discharging by corrosion is adjacent one another are, make sacrifice layer discharge can be quick, clean complete, and form complete cavity; The sacrifice layer that runs through thin film bulk acoustic resonator discharges window array and can discharge the stress between film in piezoelectric thin film transducer stacked structure, improves its long-time stability.
The method of making described hollow out cavity type thin film bulk acoustic resonator, its processing step is as follows:
A. thermal oxidation silicon substrate forms sacrifice layer;
B. the supporting layer of region of growth release window array on sacrifice layer;
C. on supporting layer, region of growth discharges the hearth electrode of window array, corresponding the running through of release window array of the release window array of supporting layer and sacrifice layer in step B;
D. on hearth electrode, region of growth discharges the piezoelectric layer of window array, corresponding the running through of release window array of the release window array of hearth electrode and supporting layer in step C;
E. on piezoelectric layer, region of growth discharges the top electrode of window array, corresponding the running through of release window array of the release window array of piezoelectric layer and hearth electrode in step D;
F. the corrosion passage releasing sacrificial layer forming by running through the release window array of transducer stack stack structure, forms complete air chamber.
In described manufacture method, adopt stripping method to form in patterned electrodes and discharge window array.
In sum, the present invention compared with prior art, is the innovation of cavity type thin film bulk acoustic resonator manufacture method, has broken through Traditional Thinking constraint, and its processing technology is simple, feasible.
Brief description of the drawings
Fig. 1 is the schematic top plan view of hollow out cavity type thin film bulk acoustic resonator of the present invention.
Fig. 2 cuts according to A-A ' schematic cross-section obtaining in Fig. 1 of the present invention.
Fig. 3-8 are the process chart of hollow out cavity type thin film bulk acoustic resonator of the present invention.
Fig. 9-12 are the hearth electrode stripping technology flow chart of hollow out cavity type thin film bulk acoustic resonator of the present invention.
The process chart of avoiding electric pole short circuit that Figure 13-16 are hollow out cavity type thin film bulk acoustic resonator of the present invention.
Figure 17-20 are that hollow out cavity type thin film bulk acoustic resonator sacrifice layer of the present invention discharges window shape design.
Wherein, Reference numeral is: 1 silicon substrate, 2 sacrifice layers, 3 supporting layers, 4 hearth electrodes, 5 piezoelectric layers, 6 top electrodes, 7 sacrifice layer release channels, 8 air chambers.
Embodiment
Below in conjunction with accompanying drawing, specific embodiment of the invention method is described in further detail.
Fig. 1 is the schematic top plan view of hollow out cavity type thin film bulk acoustic resonator of the present invention, and Fig. 2 is that hollow out cavity type thin film bulk acoustic resonator is cut the sectional view obtaining according to A-A ' in Fig. 1.Hollow out cavity type thin film bulk acoustic resonator of the present invention, comprises silicon substrate 1, sacrifice layer 2, supporting layer 3, hearth electrode 4, piezoelectric layer 5, top electrode 6, sacrifice layer release channel 7, air chamber 8.Described air chamber 8 imports corrosive liquid by sacrifice layer release channel 7 sacrifice layer 2 etchings is formed, and wherein sacrifice layer release channel 7 is made up of the release window array of transducer stack stack structure.The release window of described piezoelectric layer 5 is less than the release window of hearth electrode 4, for preventing technical process top electrode 6 and hearth electrode 4 short circuits.In Fig. 1-2, hollow out cavity type thin film bulk acoustic resonator is regular pentagon, in the time of its (conventionally adopting p-wave model) transverse vibration, shear wave carrys out back reflective on the regular pentagon border being not parallel to each other, the stack that has reduced reflected wave and incident wave produces the probability of resonance, has reduced the impedance operator of shear wave resonance parasitic in its p-wave model impedance operator.
Fig. 3-8 are the process chart of hollow out cavity type thin film bulk acoustic resonator of the present invention, implement successively according to 3 ~ 8 six main technological steps orders.In Fig. 3, in substrate silicon 1, form in its surface one deck sacrifice layer 2 by thermal oxidation; In Fig. 4, on sacrifice layer 2, the supporting layer 3(of region of growth release window array selects the material that conductive coefficient is large, to improve its power capacity); In Fig. 5, on supporting layer 3, region of growth discharges the hearth electrode 4 of window array; In Fig. 6, on hearth electrode 4, region of growth discharges the piezoelectric layer 5 of window array; In Fig. 7, on piezoelectric layer 5, region of growth discharges the top electrode 6 of window array; In Fig. 8, import corrosive liquid by release channel 7 sacrifice layer 3 is carried out to etching, form cavity structure 8.
Fig. 9-12 are the hearth electrode stripping technology flow chart of hollow out cavity type thin film bulk acoustic resonator of the present invention, comprise four key steps, and sequence of process steps is implemented successively according to the order of Fig. 9-12.In Fig. 9, on sacrifice layer 2, region of growth discharges the supporting layer 3 of window array; In Figure 10, on supporting layer 3, cover one deck photoresist, through ultraviolet exposure and acetone clean, form the mask layer of hearth electrode 4; In Figure 11, one deck hearth electrode 4 of growing on photoresist; In Figure 12, adopt the method for peeling off, in graphical hearth electrode 4, form hearth electrode and discharge window.
The process chart of avoiding electric pole short circuit that Figure 13-16 are hollow out cavity type thin film bulk acoustic resonator of the present invention, comprises four key steps, and sequence of process steps is implemented successively according to the order of Figure 13-16.In Figure 13, discharge region of growth on the hearth electrode 4 of window array and discharge the piezoelectric layer 5 of window array at band, wherein the sacrifice layer of piezoelectric layer 5 discharges corresponding the running through of release window of window and hearth electrode 4, and the former size is less than the latter's size; In Figure 14, direct sputter growth top electrode 6 on piezoelectric layer 5, because the release window of piezoelectric layer 5 is less than the release window of hearth electrode 4, has avoided the top electrode 6 and hearth electrode 4 short circuits of sputter growth; In Figure 15, on hearth electrode 6, cover one deck photoresist, through ultraviolet exposure and acetone clean, form the mask layer of top electrode 6; In Figure 16, adopt corrosive liquid to carry out etching to top electrode 6, the sacrifice layer that has formed top electrode 6 in graphical top electrode 6 discharges window.
Figure 17-20 are that hollow out cavity type thin film bulk acoustic resonator sacrifice layer of the present invention discharges window shape design, comprise that the sacrifice layer of four shapes discharges window shape design, are respectively square, circle, triangle, regular pentagon.In figure, shade is to discharge by difformity sacrifice layer the sacrifice layer that window array discharges, wherein by square discharge window array discharge sacrifice layer communicate with each other, utilize fully, efficiently the termination length of sacrifice layer corrosion, releasing sacrificial layer that can be quick, clean, forms complete cavity structure.
Claims (8)
1. a hollow out cavity type thin film bulk acoustic resonator, is characterized in that: comprise silicon substrate, sacrifice layer and piezoelectric thin film transducer stacked structure, piezoelectric thin film transducer stacked structure comprises supporting layer, hearth electrode, piezoelectric layer, top electrode from the bottom up successively; Described piezoelectric thin film transducer stacked structure is released window array to be run through, and discharges window array and has formed release channel; In the middle of described sacrifice layer, be provided with hollow space, this hollow space and silicon substrate below and supporting layer above form air chamber.
2. a kind of hollow out cavity type thin film bulk acoustic resonator according to claim 1, is characterized in that: described air chamber is to import corrosive liquid by the release channel of sacrifice layer sacrifice layer etching is formed.
3. a kind of hollow out cavity type thin film bulk acoustic resonator according to claim 1, is characterized in that: the release window of described piezoelectric layer is less than the release window of hearth electrode, for preventing in technical process top electrode and hearth electrode short circuit.
4. a kind of hollow out cavity type thin film bulk acoustic resonator according to claim 1, is characterized in that: described release channel runs through piezoelectric thin film transducer stacked structure, and is positioned at the front of thin film bulk acoustic resonator.
5. a kind of hollow out cavity type thin film bulk acoustic resonator according to claim 1, is characterized in that: described whole thin film bulk acoustic resonator is designed to regular pentagon.
6. the sacrifice layer that runs through stacked structure according to claim 1 discharges the release window shape in window array, it is characterized in that: described release window shape is square.
7. the method for the hollow out cavity type thin film bulk acoustic resonator described in making claim 1-6 any one, its processing step is as follows:
A. thermal oxidation silicon substrate forms sacrifice layer;
B. the supporting layer of region of growth release window array on sacrifice layer;
C. on supporting layer, region of growth discharges the hearth electrode of window array, corresponding the running through of release window array of the release window array of supporting layer and sacrifice layer in step B;
D. on hearth electrode, region of growth discharges the piezoelectric layer of window array, corresponding the running through of release window array of the release window array of hearth electrode and supporting layer in step C;
E. on piezoelectric layer, region of growth discharges the top electrode of window array, corresponding the running through of release window array of the release window array of piezoelectric layer and hearth electrode in step D;
F. the corrosion passage releasing sacrificial layer forming by running through the release window array of transducer stack stack structure, forms complete air chamber.
8. the manufacture method of hollow out cavity type thin film bulk acoustic resonator according to claim 7, is characterized in that: adopt stripping method to form in patterned electrodes and discharge window array.
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