CN205609499U - Wafer level surface sound filtering chip package structure - Google Patents
Wafer level surface sound filtering chip package structure Download PDFInfo
- Publication number
- CN205609499U CN205609499U CN201620271910.8U CN201620271910U CN205609499U CN 205609499 U CN205609499 U CN 205609499U CN 201620271910 U CN201620271910 U CN 201620271910U CN 205609499 U CN205609499 U CN 205609499U
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- wafer
- filtering chip
- sound filtering
- surface sound
- laminating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The utility model relates to a wafer level surface sound filtering chip package structure, the structure is including surface sound filtering chip wafer (1), surperficial include electrode area territory (1.1) and induction area (1.2) of surface sound filtering chip wafer (1), electrode area territory (1.1) surface is provided with the first metal layer (2), surface sound filtering chip wafer (1) surface is provided with insulating layer (3), insulating layer (3) top is provided with laminating wafer (4), between laminating wafer (4) and induction area (1.2) vacuole formation (7), laminating wafer (4) is provided with trompil (8) in electrode area territory (1.1) position department, be provided with pombe (6) in trompil (8). The utility model relates to a wafer level surface sound filtering chip package structure, it can provide the more surperficial acoustical filter spare of small size and volume to lower manufacturing cost has.
Description
Technical field
This utility model relates to a kind of wafer level surface sound filtering chip encapsulating structure, belongs to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound to filter, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, need to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in completely in substrate cavity body, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, easily has the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process to be sealed module, forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension is the biggest, under the trend trend that current electronic equipment does less and less, need constantly to reduce electronic installation and used in the weight of surface acoustic filter part and size.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of wafer level surface sound filtering chip encapsulating structure for above-mentioned prior art, and it is provided that the surface acoustic filter part of a kind of less area and volume, and has lower manufacturing cost.
The technical scheme in the invention for solving the above technical problem is: a kind of wafer level surface sound filtering chip encapsulating structure, it includes surface sound filtering chip wafer, described surface sound filtering chip crystal column surface includes electrode zone and induction region, described electrode area surfaces is provided with the first metal layer, sound filtering chip wafer region in addition to electrode zone and induction region in described surface is provided with insulating barrier, described insulating barrier is provided above wafer of fitting, cavity is formed between described laminating wafer and induction region, described laminating wafer is provided with perforate in electrode zone position, it is provided with metal ball in described perforate, described metal ball contacts with the first metal layer.
Described laminating wafer is arranged on insulating barrier by adhesive glue.
Described laminating wafer rear offers groove, and described groove is positioned at above induction region.
Described insulating barrier uses adhesive glue to substitute.
Compared with prior art, the utility model has the advantage of:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the wafer level surface sound filtering chip encapsulating structure that reliability is higher;
2, wafer level surface of the present utility model sound filtering chip encapsulating structure can directly use, it is also possible to total and other encapsulating structures are formed on substrate secondary encapsulation, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of wafer level of this utility model surface sound filtering chip encapsulating structure.
Fig. 2 ~ Fig. 9 is the process chart of the manufacture method of a kind of wafer level of this utility model surface sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Insulating barrier 3
Laminating wafer 4
Adhesive glue 5
Metal ball 6
Cavity 7
Perforate 8.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, this utility model is described in further detail.
As shown in Figure 1, a kind of wafer level surface sound filtering chip encapsulating structure in the present embodiment, it includes surface sound filtering chip wafer 1, sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2, described electrode zone 1.1 surface configuration has the first metal layer 2, the sound filtering chip wafer 1 region in addition to electrode zone 1.1 and induction region 1.2 in described surface is provided with insulating barrier 3, described the first metal layer 2 flushes with insulating barrier 3, above described insulating barrier 3, adhesive glue 5 is provided with laminating wafer 4, cavity 7 is formed between described laminating wafer 4 and induction region 1.2, described laminating wafer 4 is provided with perforate 8 in electrode zone 1.1 position, it is provided with metal ball 6 in described perforate 8, described metal ball 6 contacts with the first metal layer 2.
Described laminating wafer 4 back side offers groove, and described groove is positioned at above induction region 1.2.
Described insulating barrier 3 may be used without adhesive glue 5 and substitutes.
Its manufacture method comprises the following steps that:
Step one, see Fig. 2, take a piece of surface sound filtering chip wafer;
Step 2, seeing Fig. 3, the electrode zone at surface sound filtering chip wafer prepares the first metal layer;
Surface sound filtering chip wafer, by cleaning, toasts, sputtering, resist coating, photoetching, development, and copper electroplating layer removes photoresist, and the method for etching prepares the first metal layer at electrode zone;
Step 3, prepare insulating barrier
See Fig. 4, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development;
Step 4, laminating wafer laminating
Seeing Fig. 5, take a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing insulating barrier with step 3 fits together, thus forms cavity above chip induction region;
Step 5, thinning
See Fig. 6, laminating wafer is ground, thinning;
Step 6, etching
See Fig. 7, at laminating crystal column surface resist coating, and be exposed, development, etching, need the surface sound filtering wafer the first metal layer planting ball to come out follow-up, form perforate;
Step 7, plant ball
See Fig. 8, carry out planting ball in the first metal layer position come out;
Step 8, cutting
Seeing Fig. 9, cutting is divided into single product.
In above-mentioned steps, described step 5 can be omitted;
Described insulating barrier can be B-stage glue, melted after colloid heating, now can need not be coated with adhesive glue on laminating wafer, directly fit;
Described laminating wafer is glass material or other insulant.
In addition to the implementation, this utility model also includes the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, within all should falling into this utility model scope of the claims.
Claims (4)
- null1. a wafer level surface sound filtering chip encapsulating structure,It is characterized in that: it includes surface sound filtering chip wafer (1),Sound filtering chip wafer (1) surface, described surface includes electrode zone (1.1) and induction region (1.2),Described electrode zone (1.1) surface configuration has the first metal layer (2),Described surface sound filtering chip wafer (1) region in addition to electrode zone (1.1) and induction region (1.2) is provided with insulating barrier (3),Described insulating barrier (3) is provided above wafer (4) of fitting,Cavity (7) is formed between described laminating wafer (4) and induction region (1.2),Described laminating wafer (4) is provided with perforate (8) in electrode zone (1.1) position,Metal ball (6) it is provided with in described perforate (8),Described metal ball (6) contacts with the first metal layer (2).
- A kind of wafer level surface the most according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer (4) is arranged on insulating barrier (3) by adhesive glue (5).
- A kind of wafer level surface the most according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer (4) back side offers groove, and described groove is positioned at induction region (1.2) top.
- A kind of wafer level surface the most according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described insulating barrier (3) uses adhesive glue (5) to substitute.
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CN201620271910.8U CN205609499U (en) | 2016-04-01 | 2016-04-01 | Wafer level surface sound filtering chip package structure |
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CN201620271910.8U CN205609499U (en) | 2016-04-01 | 2016-04-01 | Wafer level surface sound filtering chip package structure |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105897219A (en) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof |
CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
CN113224011A (en) * | 2020-01-18 | 2021-08-06 | 深圳市麦捷微电子科技股份有限公司 | Wafer-level packaging structure of surface acoustic wave filter and preparation method thereof |
-
2016
- 2016-04-01 CN CN201620271910.8U patent/CN205609499U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105897219A (en) * | 2016-04-01 | 2016-08-24 | 江苏长电科技股份有限公司 | Wafer level surface acoustic filter chip packaging structure and manufacturing method thereof |
CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
CN113224011A (en) * | 2020-01-18 | 2021-08-06 | 深圳市麦捷微电子科技股份有限公司 | Wafer-level packaging structure of surface acoustic wave filter and preparation method thereof |
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