CN105811917A - Metal wafer level surface acoustic filter chip package structure and manufacturing method thereof - Google Patents

Metal wafer level surface acoustic filter chip package structure and manufacturing method thereof Download PDF

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Publication number
CN105811917A
CN105811917A CN201610203979.1A CN201610203979A CN105811917A CN 105811917 A CN105811917 A CN 105811917A CN 201610203979 A CN201610203979 A CN 201610203979A CN 105811917 A CN105811917 A CN 105811917A
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CN
China
Prior art keywords
wafer
laminating
insulating barrier
sound filtering
filtering chip
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Pending
Application number
CN201610203979.1A
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Chinese (zh)
Inventor
张江华
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN201610203979.1A priority Critical patent/CN105811917A/en
Publication of CN105811917A publication Critical patent/CN105811917A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention relates to a metal wafer level surface acoustic filter chip package structure and a manufacturing method thereof. The structure comprises a surface acoustic filter chip wafer (1), a first insulating layer (2) is arranged on the surface of the surface acoustic filter chip wafer (1), a bonded wafer (4) is arranged on the first insulating layer (2), a second insulating layer (7) is arranged on the surface of the bonded wafer (4), a first metal layer (8) is arranged on the surfaces of the second insulating layer (7) and an electrode surface area (1.1), a third insulating layer (9) is arranged on the surface of the first metal layer (8), a second open pore (10) is formed in the surface of the third insulating layer (9), a metal ball (11) is arranged in the second open pore (10), and the metal ball (11) is in contact with the first metal layer (8). According to the metal wafer level surface acoustic filter chip package structure and the manufacturing method thereof provided by the invention, a surface acoustic wave filter device with a smaller area and a smaller volume can be provided, and the manufacturing cost is lower.

Description

Round metal chip level surface sound filtering chip encapsulating structure and manufacture method thereof
Technical field
The present invention relates to a kind of round metal chip level surface sound filtering chip encapsulating structure and manufacture method thereof, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound filtering, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, it is necessary to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in substrate cavity body completely, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, it is easy to have the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process that module is sealed, and forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension or relatively larger, under the trend trend that current electronic equipment does less and less, it is necessary to constantly reduce electronic installation and the weight of surface acoustic filter part wherein used and size.
Summary of the invention
The technical problem to be solved is to provide a kind of round metal chip level surface sound filtering chip encapsulating structure and manufacture method thereof for above-mentioned prior art, it is provided that the surface acoustic filter part of a kind of less area and volume, and has less manufacturing cost.
nullThis invention address that the technical scheme that the problems referred to above adopt is: a kind of round metal chip level surface sound filtering chip encapsulating structure，It includes surface sound filtering chip wafer，Described surface sound filtering chip crystal column surface includes electrode zone and induction region，Sound filtering chip wafer region except electrode zone and induction region in described surface is provided with the first insulating barrier，Described first insulating barrier is provided with laminating wafer，Cavity is formed between described laminating wafer and induction region，Described laminating wafer is provided with the first perforate in electrode zone position，Described laminating crystal column surface is provided with the second insulating barrier，Described second surface of insulating layer and electrode area surfaces are provided with the first metal layer，Described the first metal layer surface configuration has the 3rd insulating barrier，Described 3rd surface of insulating layer is provided with the second perforate，It is provided with metal ball in described second perforate，Described metal ball contacts with the first metal layer.
Described laminating wafer is arranged on the first insulating barrier by adhesive glue.
A kind of manufacture method of round metal chip level surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, laminating wafer laminating
Taking a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing the first insulating barrier with step 2 fits together, thus being formed over cavity at chip induction region；
Step 4, etching
At laminating wafer topcoating photoresist, and it is exposed, development, etching, is come out in the electrode zone position of surface sound filtering chip wafer, form the first perforate；
Step 5, prepare the second insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of the electrode zone position on the sound filtering chip wafer of surface is removed by the method for development；
Step 6, plating the first metal layer
Electrode area surfaces and the second surface of insulating layer selective electroplating the first metal layer at surface sound filtering chip wafer；
Step 7, preparation the 3rd insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the follow-up insulating cement planting ball position is removed by the method for development, forms the second perforate；
Step 8, plant ball
Carry out planting ball planting ball position；
Step 9, cutting
Cutting is divided into single product.
Between described step 3 and step 4 to laminating wafer be ground, thinning.
Described first insulating barrier adopts B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, is made directly laminating.
Described laminating wafer adopts Silicon Wafer or metal material wafer.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the round metal chip level surface sound filtering chip encapsulating structure that reliability is higher；
2, the round metal chip level surface sound filtering chip encapsulating structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed secondary encapsulation on substrate, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of round metal chip level of present invention surface sound filtering chip encapsulating structure.
Fig. 2 ~ Figure 11 is the process chart of the manufacture method embodiment one of a kind of round metal chip level of present invention surface sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
First insulating barrier 2
Adhesive glue 3
Laminating wafer 4
Cavity 5
First perforate 6
Second insulating barrier 7
The first metal layer 8
3rd insulating barrier 9
Second perforate 10
Metal ball 11.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
nullAs shown in Figure 1，A kind of round metal chip level surface sound filtering chip encapsulating structure in the present embodiment，It includes surface sound filtering chip wafer 1，Sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2，The sound filtering chip wafer 1 region except electrode zone 1.1 and induction region 1.2 in described surface is provided with the first insulating barrier 2，Described first insulating barrier 2 is provided with laminating wafer 4 by adhesive glue 3，Cavity 5 is formed between described laminating wafer 4 and induction region 1.2，Described laminating wafer 4 is provided with the first perforate 6 in electrode zone 1.1 position，Described laminating wafer 4 surface configuration has the second insulating barrier 7，Described second insulating barrier 7 surface and electrode zone 1.1 surface configuration have the first metal layer 8，Described the first metal layer 8 surface configuration has the 3rd insulating barrier 9，Described 3rd insulating barrier 9 surface configuration has the second perforate 10，It is provided with metal ball 11 in described second perforate 10，Described metal ball 11 contacts with the first metal layer 8.
Its manufacture method comprises the following steps that:
Step one, referring to Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Referring to Fig. 3, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, laminating wafer laminating
Referring to Fig. 4, taking a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing the first insulating barrier with step 2 fits together, thus being formed over cavity at chip induction region；
Step 4, thinning
Referring to Fig. 5, laminating wafer is ground, thinning；
Step 5, etching
Referring to Fig. 6, at laminating wafer topcoating photoresist, and it is exposed, development, etching, is come out in the electrode zone position of surface sound filtering chip wafer, form the first perforate；
Step 6, prepare the second insulating barrier
Referring to Fig. 7, with coating technique laminating Jingjing circle on be coated with one layer of insulating cement, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 7, plating the first metal layer
Referring to Fig. 8, at electrode area surfaces and the second surface of insulating layer selective electroplating the first metal layer of surface sound filtering chip wafer；
Step 8, preparation the 3rd insulating barrier
Referring to Fig. 9, on laminating Jingjing circle, be coated with one layer of insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the follow-up insulating cement planting ball position is removed by the method for development, forms the second perforate；
Step 9, plant ball
Referring to Figure 10, carry out planting ball planting ball position；
Step 10, cutting
Referring to Figure 11, cutting is divided into single product.
In above-mentioned steps, described step 4 can be omitted；
Described first insulating barrier can be B-stage glue, melted after colloid heating, now can be coated with adhesive glue on laminating wafer, be made directly laminating；
Described laminating wafer is Silicon Wafer or metal material.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the protection domain of the claims in the present invention.

Claims (6)

  1. null1. a round metal chip level surface sound filtering chip encapsulating structure，It is characterized in that: it includes surface sound filtering chip wafer (1)，Sound filtering chip wafer (1) surface, described surface includes electrode zone (1.1) and induction region (1.2)，Described surface sound filtering chip wafer (1) region except electrode zone (1.1) and induction region (1.2) is provided with the first insulating barrier (2)，Described first insulating barrier (2) is provided with laminating wafer (4)，Cavity (5) is formed between described laminating wafer (4) and induction region (1.2)，Described laminating wafer (4) is provided with the first perforate (6) in electrode zone (1.1) position，Described laminating wafer (4) surface configuration has the second insulating barrier (7)，Described second insulating barrier (7) surface and electrode zone (1.1) surface configuration have the first metal layer (8)，Described the first metal layer (8) surface configuration has the 3rd insulating barrier (9)，Described 3rd insulating barrier (9) surface configuration has the second perforate (10)，It is provided with metal ball (11) in described second perforate (10)，Described metal ball (11) contacts with the first metal layer (8).
  2. 2. a kind of round metal chip level surface according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer (4) is arranged on the first insulating barrier (2) by adhesive glue (3).
  3. 3. the manufacture method of a round metal chip level surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
    Step one, take a piece of surface sound filtering chip wafer；
    Step 2, prepare the first insulating barrier
    Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
    Step 3, laminating wafer laminating
    Taking a piece of laminating wafer, be coated with last layer adhesive glue on laminating wafer, the surface sound filtering chip wafer preparing the first insulating barrier with step 2 fits together, thus being formed over cavity at chip induction region；
    Step 4, etching
    At laminating wafer topcoating photoresist, and it is exposed, development, etching, is come out in the electrode zone position of surface sound filtering chip wafer, form the first perforate；
    Step 5, prepare the second insulating barrier
    Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
    Step 6, plating the first metal layer
    Electrode area surfaces and the second surface of insulating layer selective electroplating the first metal layer at surface sound filtering chip wafer；
    Step 7, preparation the 3rd insulating barrier
    Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the follow-up insulating cement planting ball position is removed by the method for development, forms the second perforate；
    Step 8, plant ball
    Carry out planting ball planting ball position；
    Step 9, cutting
    Cutting is divided into single product.
  4. 4. the manufacture method of a kind of round metal chip level surface according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: between described step 3 and step 4 to laminating wafer be ground, thinning.
  5. 5. the manufacture method of a kind of round metal chip level surface according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: described first insulating barrier adopts B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, is made directly laminating.
  6. 6. the manufacture method of a kind of round metal chip level surface according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer adopts Silicon Wafer or metal material wafer.
CN201610203979.1A 2016-04-01 2016-04-01 Metal wafer level surface acoustic filter chip package structure and manufacturing method thereof Pending CN105811917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610203979.1A CN105811917A (en) 2016-04-01 2016-04-01 Metal wafer level surface acoustic filter chip package structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610203979.1A CN105811917A (en) 2016-04-01 2016-04-01 Metal wafer level surface acoustic filter chip package structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN105811917A true CN105811917A (en) 2016-07-27

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106301283A (en) * 2016-11-07 2017-01-04 无锡吉迈微电子有限公司 The encapsulating structure of SAW filter and manufacture method
CN107786183A (en) * 2016-08-25 2018-03-09 通用电气公司 Embedded RF filter packages structure and its manufacture method
CN109004081A (en) * 2018-08-10 2018-12-14 付伟 With the double cofferdam of extension, metal column and encapsulating structure of scolding tin and preparation method thereof
CN111952199A (en) * 2019-05-16 2020-11-17 中芯集成电路（宁波）有限公司 Air gap type semiconductor device packaging structure and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777263B1 (en) * 2003-08-21 2004-08-17 Agilent Technologies, Inc. Film deposition to enhance sealing yield of microcap wafer-level package with vias
CN101156242A (en) * 2005-04-11 2008-04-02 肖特股份公司 Method for the production of enclosed electronic components, and enclosed electronic component
US7596849B1 (en) * 2003-06-11 2009-10-06 Triquint Semiconductor, Inc. Method of assembling a wafer-level package filter
JP2014057124A (en) * 2012-09-11 2014-03-27 Panasonic Corp Surface acoustic wave device and manufacturing method thereof
CN205610595U (en) * 2016-04-01 2016-09-28 江苏长电科技股份有限公司 Metal wafer level surface sound filtering chip package structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7596849B1 (en) * 2003-06-11 2009-10-06 Triquint Semiconductor, Inc. Method of assembling a wafer-level package filter
US6777263B1 (en) * 2003-08-21 2004-08-17 Agilent Technologies, Inc. Film deposition to enhance sealing yield of microcap wafer-level package with vias
CN101156242A (en) * 2005-04-11 2008-04-02 肖特股份公司 Method for the production of enclosed electronic components, and enclosed electronic component
JP2014057124A (en) * 2012-09-11 2014-03-27 Panasonic Corp Surface acoustic wave device and manufacturing method thereof
CN205610595U (en) * 2016-04-01 2016-09-28 江苏长电科技股份有限公司 Metal wafer level surface sound filtering chip package structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107786183A (en) * 2016-08-25 2018-03-09 通用电气公司 Embedded RF filter packages structure and its manufacture method
CN107786183B (en) * 2016-08-25 2021-07-06 通用电气公司 Embedded RF filter package structure and method of manufacturing the same
CN106301283A (en) * 2016-11-07 2017-01-04 无锡吉迈微电子有限公司 The encapsulating structure of SAW filter and manufacture method
CN109004081A (en) * 2018-08-10 2018-12-14 付伟 With the double cofferdam of extension, metal column and encapsulating structure of scolding tin and preparation method thereof
CN111952199A (en) * 2019-05-16 2020-11-17 中芯集成电路（宁波）有限公司 Air gap type semiconductor device packaging structure and manufacturing method thereof

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Application publication date: 20160727