CN105897218B - Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method - Google Patents
Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method Download PDFInfo
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- CN105897218B CN105897218B CN201610202596.2A CN201610202596A CN105897218B CN 105897218 B CN105897218 B CN 105897218B CN 201610202596 A CN201610202596 A CN 201610202596A CN 105897218 B CN105897218 B CN 105897218B
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- filtering chip
- sound filtering
- surface sound
- groove
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention relates to a kind of groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method, the structure includes surface sound filtering chip wafer（1）, the surface sound filtering chip wafer（1）Surface includes electrode zone（1.1）And induction region（1.2）, the surface sound filtering chip wafer（1）Top is provided with fitting wafer（4）, the fitting wafer（4）With induction region（1.2）Between form cavity（7）, the fitting wafer（4）In electrode zone（1.1）Trepanning is provided at position（8）, the trepanning（8）It is interior to be filled with conducting resinl or plating metal（9）, the conducting resinl or plating metal（9）Surface be provided with second metal layer（10）, the second metal layer（10）On be provided with metal ball（6）.A kind of groove buried via hole type surface sound filtering chip encapsulating structure of the invention and its manufacturing method, it can provide a kind of surface acoustic filter part of more small area and volume, have lower manufacturing cost.
Description
Technical field
The present invention relates to a kind of groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing methods, belong to semiconductor
Encapsulation technology field.
Background technology
Surface sound filter apparatus be widely used in RF and IF application, including pocket telephone, radiophone and
Various radio devices.It is filtered by using surface sound, to these electronic equipments into processing such as filtering, the delays of horizontal electrical signal.
Because of surface acoustical filter properties of product and design function demand, need to ensure that filtering chip functional area cannot contact any substance,
I.e. cavity structure designs.
Existing surface acoustic filter part encapsulating structure is that filtering chip is passed through conductive bump flip chip bonding and ceramic substrate
It is connected and is embedded in substrate cavity body completely, substrate surface adds metal cover to protect.But the cost of such structural metal lid is higher, and
And the flatness requirement of ceramic substrate and metal cover is relatively high, the case where being easy close bad.In addition other surfaces sound filters
The production method of device is that sealing or coating process seal module at the top of use, forms cavity structure.
The packaging method of existing surface acoustic filter part, flow is longer, and cost is higher, and structure size still compares
Greatly, more done in current electronic equipment under smaller trend trend, need constantly reduce electronic device and its used in surface
The weight and size of acoustic filter part.
Invention content
The technical problem to be solved by the present invention is to provide a kind of sound filter of groove buried via hole type surface for the above-mentioned prior art
Wave chip-packaging structure and its manufacturing method, it can provide a kind of surface acoustic filter part of more small area and volume, and have
There is lower manufacturing cost.
Technical solution is used by the present invention solves the above problems：A kind of sound filtering chip encapsulation of groove buried via hole type surface
Structure, it includes surface sound filtering chip wafer, and the surface sound filtering chip crystal column surface includes electrode zone and induction zone
Domain, the electrode area surfaces are provided with the first metal layer, and the surface sound filtering chip wafer removes electrode zone and induction zone
Overseas region is provided with adhesive glue, is provided with fitting wafer above the adhesive glue, the fitting wafer and induction region it
Between form cavity, the fitting wafer is provided with the first trepanning at electrode zone position, filled with leading in first trepanning
The surface of electric glue or plating metal, the conducting resinl or plating metal is provided with second metal layer, is set in the second metal layer
It is equipped with insulating layer, the second trepanning is provided on the insulating layer.
It is provided with metal ball in second trepanning；
The fitting wafer rear opens up fluted, and the groove is located above induction region.
A kind of manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure, the method includes following technique steps
Suddenly：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: the electrode zone in surface sound filtering chip wafer prepares the first metal layer；
Step 3: fitting crystal round etching groove
A piece of fitting wafer is taken, etches groove in the position that fitting wafer needs, position and the surface sound of groove filter
The electrode zone of chip die and the position of chip induction region are corresponding；
Step 4: fitting wafer fitting
The fitting wafer that step 3 is etched to groove is fit together by adhesive glue and surface sound filtering chip wafer,
To form cavity above chip induction region；
Step 5: etching trepanning
It in fitting wafer face resist coating, exposes, develops, etching forms the first trepanning above electrode zone；
Step 6: buried via hole
It is embedded in the first trepanning with conducting resinl or plating metal；
Step 7 prepares second metal layer
The surface of the conducting resinl or plating metal that are embedded in the first trepanning of step 6 prepares second metal layer；
Step 8: preparing insulating layer
One layer of insulating cement is applied in second metal layer, follow-up ball position of planting is exposed with the method for photoetching, development, shape
At the second trepanning；
Step 9: planting ball
The plant ball position exposed in step 8 carries out plant ball；
Step 10: cutting
Cutting is divided into single product.
It is ground, is thinned to being bonded wafer between the step 4 and step 5.
The fitting wafer uses glass material.
Compared with the prior art, the advantages of the present invention are as follows：
1, compared with traditional technique, whole production procedure is wafer scale, the energy small sized encapsulating structure of shape, and
It is simple for process, it can guarantee the cavity structure of chip induction zone, the higher groove buried via hole type surface sound filtering core of reliability can be formed
Chip package；
2, groove buried via hole type surface sound filtering chip encapsulating structure of the invention can be used directly, can also be by whole knot
Structure and other encapsulating structures form secondary encapsulation on substrate, form system in package.
Description of the drawings
Fig. 1 is a kind of schematic diagram of groove buried via hole type surface sound filtering chip encapsulating structure of the present invention.
Fig. 2 ~ Figure 12 is a kind of technique of the manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure of the present invention
Flow chart.
Wherein：
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Adhesive glue 3
It is bonded wafer 4
Groove 5
Metal ball 6
Cavity 7
First trepanning 8
Conducting resinl or plating metal 9
Second metal layer 10
Insulating layer 11
Second trepanning 12.
Specific implementation mode
Below in conjunction with attached drawing embodiment, present invention is further described in detail.
As shown in Figure 1, a kind of groove buried via hole type surface sound filtering chip encapsulating structure in the present embodiment, it includes surface
Sound filtering chip wafer 1,1 surface of surface sound filtering chip wafer include electrode zone 1.1 and induction region 1.2, described
1.1 surface of electrode zone is provided with the first metal layer 2, and the surface sound filtering chip wafer 1 removes electrode zone 1.1 and induction zone
Region outside domain 1.2 is provided with adhesive glue 3, and 3 top of the adhesive glue is provided with fitting wafer 4, the fitting wafer 4 and induction
Cavity 7 is formed between region 1.2, the fitting wafer 4 is provided with the first trepanning 8 at 1.1 position of electrode zone, and described first
It is filled with conducting resinl or plating metal 9 in trepanning 8, the surface of the conducting resinl or plating metal 9 is provided with second metal layer 10,
It is provided with insulating layer 11 in the second metal layer 10, the second trepanning 12, second trepanning are provided on the insulating layer 11
Inside it is provided with metal ball 6.
The metal ball 6 is in contact with second metal layer 10.
4 back side of fitting wafer opens up fluted 5, and the groove 5 is located at 1.2 top of induction region.
Its manufacturing method comprises the following steps that：
Step 1: referring to Fig. 2, a piece of surface sound filtering chip wafer is taken；
Step 2: referring to Fig. 3, on surface, the electrode zone of sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer is toasted by cleaning, sputtering, resist coating, photoetching, development, and copper electroplating layer delusters
The method of photoresist, etching prepares the first metal layer in electrode zone；
Step 3: fitting crystal round etching groove
Referring to Fig. 4, a piece of fitting wafer is taken, groove, the position of groove and table are etched in the position that fitting wafer needs
The electrode zone of face sound filtering chip wafer and the position of chip induction region are corresponding；
Step 4: fitting wafer fitting
Referring to Fig. 5, the fitting wafer that step 3 is etched to groove is pasted by adhesive glue and surface sound filtering chip wafer
It is combined, to form cavity above chip induction region；
Step 5: being thinned
Referring to Fig. 6, fitting wafer is ground, is thinned；
Step 6: etching trepanning
It exposes, develops, etch in fitting wafer face resist coating referring to Fig. 7, form first above electrode zone and open
Hole；
Step 7: buried via hole
Referring to Fig. 8, it is embedded in the first trepanning with conducting resinl or plating metal；
Step 8 prepares second metal layer
It is toasted by cleaning referring to Fig. 9, sputtering, resist coating, photoetching, development, copper electroplating layer removes photoresist, etches
Method the surface of conducting resinl or plating metal prepare second metal layer；
Step 9: preparing insulating layer
Referring to Figure 10, one layer of insulating cement is applied in second metal layer, with photoetching, it is sudden and violent that the method for development will subsequently plant ball position
Expose, forms the second trepanning；
Step 10: planting ball
Referring to Figure 11, the plant ball position exposed in step 9 carries out plant ball；
Step 11: cutting
Referring to Figure 12, cutting is divided into single product.
The fitting wafer is glass material or other insulating materials；
In above-mentioned steps, the step 5 can also be omitted.
In addition to the implementation, all to use equivalent transformation or equivalent replacement the invention also includes there is an other embodiment
The technical solution that mode is formed should all be fallen within the scope of the hereto appended claims.
Claims (5)
1. a kind of groove buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that：It includes that surface sound filtering chip is brilliant
Circle（1）, the surface sound filtering chip wafer（1）Surface includes electrode zone（1.1）And induction region（1.2）, the electrode
Region（1.1）Surface is provided with the first metal layer（2）, the surface sound filtering chip wafer（1）Except electrode zone（1.1）And sense
Answer region（1.2）Outer region is provided with adhesive glue（3）, the adhesive glue（3）Top is provided with fitting wafer（4）, the patch
Synthetic is justified（4）With induction region（1.2）Between form cavity（7）, the fitting wafer（4）In electrode zone（1.1）At position
It is provided with the first trepanning（8）, first trepanning（8）It is interior to be filled with conducting resinl or plating metal（9）, the conducting resinl or plating
Metal（9）Surface be provided with second metal layer（10）, the second metal layer（10）On be provided with insulating layer（11）, described exhausted
Edge layer（11）On be provided with the second trepanning（12）, metal ball is provided in second trepanning（6）；The fitting wafer（4）The back of the body
Face opens up fluted（5）, the groove（5）Positioned at induction region（1.2）Top.
2. a kind of manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that the method includes with
Lower processing step：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: the electrode zone in surface sound filtering chip wafer prepares the first metal layer；
Step 3: fitting crystal round etching groove
A piece of fitting wafer is taken, groove, position and the surface sound filtering chip of groove are etched in the position that fitting wafer needs
The electrode zone of wafer and the position of chip induction region are corresponding；
Step 4: fitting wafer fitting
The fitting wafer that step 3 is etched to groove is fit together by adhesive glue and surface sound filtering chip wafer, to
Cavity is formed above chip induction region；
Step 5: etching trepanning
It in fitting wafer face resist coating, exposes, develops, etching forms the first trepanning above electrode zone；
Step 6: buried via hole
It is embedded in the first trepanning with conducting resinl or plating metal；
Step 7 prepares second metal layer
The surface of the conducting resinl or plating metal that are embedded in the first trepanning of step 6 prepares second metal layer；
Step 8: preparing insulating layer
One layer of insulating cement is applied in second metal layer, with photoetching, the method for development follow-up will plant ball position and be exposed, and form the
Two trepannings；
Step 9: planting ball
The plant ball position exposed in step 8 carries out plant ball；
Step 10: cutting
Cutting is divided into single product.
3. a kind of manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure according to claim 2, special
Sign is：It is ground, is thinned to being bonded wafer between the step 4 and step 5.
4. a kind of manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure according to claim 2, special
Sign is：The fitting wafer is using glass material, insulating materials.
5. a kind of manufacturing method of groove buried via hole type surface sound filtering chip encapsulating structure according to claim 2, special
Sign is：The step 3 is etched out while will be bonded crystal round etching and go out groove, subsequently needing the position for planting ball
Hole can omit step 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610202596.2A CN105897218B (en) | 2016-04-01 | 2016-04-01 | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201610202596.2A CN105897218B (en) | 2016-04-01 | 2016-04-01 | Groove buried via hole type surface sound filtering chip encapsulating structure and its manufacturing method |
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| Publication Number | Publication Date |
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| CN105897218A CN105897218A (en) | 2016-08-24 |
| CN105897218B true CN105897218B (en) | 2018-11-09 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106787277B (en) | 2017-02-27 | 2020-06-02 | 深圳市道通智能航空技术有限公司 | Motor, cloud platform and unmanned aerial vehicle |
| CN106888001B (en) * | 2017-03-08 | 2020-07-17 | 宜确半导体（苏州）有限公司 | Acoustic wave device and wafer level packaging method thereof |
| CN107241077B (en) * | 2017-05-12 | 2020-12-29 | 电子科技大学 | Piezoelectric film bulk acoustic resonator and preparation method thereof |
| CN107749748B (en) * | 2017-09-01 | 2021-12-24 | 江苏长电科技股份有限公司 | Surface acoustic wave filter chip packaging structure |
| CN112117195B (en) * | 2019-12-16 | 2023-06-02 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US7596849B1 (en) * | 2003-06-11 | 2009-10-06 | Triquint Semiconductor, Inc. | Method of assembling a wafer-level package filter |
| CN102111116A (en) * | 2010-11-24 | 2011-06-29 | 张�浩 | Integrated wafer level package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007005948A (en) * | 2005-06-22 | 2007-01-11 | Alps Electric Co Ltd | Electronic component and manufacturing method thereof |
| KR100951284B1 (en) * | 2007-06-01 | 2010-04-02 | 삼성전기주식회사 | A Wafer Level Package Fabrication Method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US7596849B1 (en) * | 2003-06-11 | 2009-10-06 | Triquint Semiconductor, Inc. | Method of assembling a wafer-level package filter |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN102111116A (en) * | 2010-11-24 | 2011-06-29 | 张�浩 | Integrated wafer level package |
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