CN105810596A - Fabrication method of etched surface acoustic filter chip package structure - Google Patents
Fabrication method of etched surface acoustic filter chip package structure Download PDFInfo
- Publication number
- CN105810596A CN105810596A CN201610203814.4A CN201610203814A CN105810596A CN 105810596 A CN105810596 A CN 105810596A CN 201610203814 A CN201610203814 A CN 201610203814A CN 105810596 A CN105810596 A CN 105810596A
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- Prior art keywords
- wafer
- laminating
- sound filtering
- filtering chip
- surface acoustic
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000010030 laminating Methods 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 20
- 230000006698 induction Effects 0.000 claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims description 57
- 239000003292 glue Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000004568 cement Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a fabrication method of an etched surface acoustic filter chip package structure. The method comprises the following steps of 1, taking a surface acoustic filter chip wafer; 2, fabricating a first metal layer on an electrode region of the surface acoustic filter chip wafer; 3, fabricating an insulation layer, applying a layer of an insulation adhesive onto the surface acoustic filter chip wafer by a coating process, and removing the insulation adhesive at positions of the electrode region and a chip induction region; 4, fully etching and laminating the wafer, carrying out lamination, taking a lamination wafer, fully etching a position subsequently required for ball mounting on the lamination wafer, and laminating the lamination wafer with the surface acoustic filter chip wafer by a bonding adhesive; 5, carrying out ball mounting at the position of ball mounting; and 6, cutting the surface acoustic filter chip wafer to a single product. With the fabrication method of the etched surface acoustic filter chip package structure, a surface acoustic filter device with smaller area and volume can be provided, and lower fabrication cost is achieved.
Description
Technical field
The present invention relates to the manufacture method of a kind of etch pattern surface sound filtering chip encapsulating structure, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound filtering, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, it is necessary to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in substrate cavity body completely, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, it is easy to have the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process that module is sealed, and forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension or relatively larger, under the trend trend that current electronic equipment does less and less, it is necessary to constantly reduce electronic installation and the weight of surface acoustic filter part wherein used and size.
Summary of the invention
The technical problem to be solved is the manufacture method providing a kind of etch pattern surface sound filtering chip encapsulating structure for above-mentioned prior art, and it is provided that the surface acoustic filter part of a kind of less area and volume, and has less manufacturing cost.
This invention address that the technical scheme that the problems referred to above adopt is: the manufacture method of a kind of etch pattern surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of the positions such as electrode zone and chip induction region is removed by the method for development；
Step 4, total eclipse are carved laminating wafer and fit
Take a piece of laminating wafer, first laminating wafer total eclipse is carved the follow-up position needing to plant ball, then fit together being complete the laminating wafer that total eclipse carves by adhesive glue and surface sound filtering chip wafer, laminating wafer needs the position planting ball corresponding to the electrode metal layer position of surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, plant ball
Carry out planting ball in the position planting ball；
Step 6, cutting
Cutting is divided into single product.
A kind of manufacture method of etch pattern surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first laminating wafer half-etching is gone out the follow-up position needing to plant ball, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, laminating wafer half-etching position is corresponding to the electrode metal layer position of surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose the position planting ball；
Step 6, plant ball
Carry out planting ball in the position planting ball；
Step 7, cutting
Cutting is divided into single product.
Described insulating barrier adopts B-stage glue, it may be unnecessary to is coated with adhesive glue on laminating wafer, is made directly laminating.
Described laminating wafer adopts glass material, insulant.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the etch pattern surface sound filtering chip encapsulating structure that reliability is higher；
2, the wafer level surface sound filtering chip structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed secondary encapsulation on substrate, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of etch pattern surface of present invention sound filtering chip encapsulating structure.
Fig. 2 ~ Fig. 7 is the process chart of the manufacture method embodiment one of a kind of etch pattern surface of present invention sound filtering chip encapsulating structure.
Fig. 8 ~ Figure 14 is the process chart of the manufacture method embodiment two of a kind of etch pattern surface of present invention sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
The first metal layer 2
Insulating barrier 3
Laminating wafer 4
Adhesive glue 5
Metal ball 6
Cavity 7
Perforate 8.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figure 1, a kind of etch pattern surface sound filtering chip encapsulating structure in the present embodiment, it includes surface sound filtering chip wafer 1, sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2, described electrode zone 1.1 surface configuration has the first metal layer 2, the sound filtering chip wafer 1 region except electrode zone 1.1 and induction region 1.2 in described surface is provided with insulating barrier 3, described the first metal layer 2 flushes with insulating barrier 3, described insulating barrier 3 is provided with laminating wafer 4 above through adhesive glue 5, cavity 7 is formed between described laminating wafer 4 and induction region 1.2, described laminating wafer 4 is provided with perforate 8 in electrode zone 1.1 position, it is provided with metal ball 6 in described perforate 8, described metal ball 6 contacts with the first metal layer 2.
Embodiment one:
A kind of manufacture method of etch pattern surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, referring to Fig. 3, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer is by cleaning, and baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the first metal layer at electrode zone；
Step 3, prepare insulating barrier
Referring to Fig. 4, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, total eclipse are carved laminating wafer and fit
Referring to Fig. 5, take a piece of laminating wafer, first laminating wafer total eclipse is carved the follow-up position needing to plant ball, then fit together being complete the laminating wafer that total eclipse carves by adhesive glue and surface sound filtering chip wafer, laminating wafer needs the position planting ball corresponding to the electrode metal layer position of surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, plant ball
Referring to Fig. 6, the position planting ball gone out at laminating crystal round etching carries out planting ball；
Step 6, cutting
Referring to Fig. 7, cutting is divided into single product.
In above-mentioned steps, described insulating barrier can be B-stage glue, melted after colloid heating, it may not be necessary to is coated with adhesive glue on laminating wafer, is made directly laminating；
Described laminating wafer adopts glass material or other insulant.
Embodiment two:
A kind of manufacture method of etch pattern surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Fig. 8, take a piece of surface sound filtering chip wafer；
Step 2, referring to Fig. 9, the electrode zone at surface sound filtering chip wafer prepares the first metal layer；
Surface sound filtering chip wafer is by cleaning, and baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the first metal layer at electrode zone；
Step 3, prepare insulating barrier
Referring to Figure 10, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Referring to Figure 11, take a piece of laminating wafer, first laminating wafer half-etching is gone out the follow-up position needing to plant ball, then being fit together by adhesive glue and surface sound filtering chip wafer by the laminating wafer being complete half-etching, laminating wafer half-etching position corresponds to the electrode metal layer position of surface sound filtering chip wafer thus being formed over cavity at chip induction region；
Step 5, thinning
Referring to Figure 12, laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose the position planting ball；
Step 6, plant ball
Referring to Figure 13, carry out planting ball in the position planting ball；
Step 7, cutting
Referring to Figure 14, cutting is divided into single product.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the protection domain of the claims in the present invention.
Claims (4)
1. the manufacture method of an etch pattern surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, total eclipse are carved laminating wafer and fit
Take a piece of laminating wafer, first laminating wafer total eclipse is carved the follow-up position needing to plant ball, then fit together being complete the laminating wafer that total eclipse carves by adhesive glue and surface sound filtering chip wafer, laminating wafer needs the position planting ball corresponding to the electrode metal layer position of surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, plant ball
Carry out planting ball in the position planting ball；
Step 6, cutting
Cutting is divided into single product.
2. the manufacture method of an etch pattern surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first metal layer at the electrode zone of surface sound filtering chip wafer；
Step 3, prepare insulating barrier
Being coated with one layer of insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 4, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first laminating wafer half-etching is gone out the follow-up position needing to plant ball, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, laminating wafer half-etching position is corresponding to the electrode metal layer position of surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 5, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose the position planting ball；
Step 6, plant ball
Carry out planting ball in the position planting ball；
Step 7, cutting
Cutting is divided into single product.
3. the manufacture method of a kind of etch pattern surface according to claim 1 and 2 sound filtering chip encapsulating structure, it is characterised in that: described insulating barrier adopts B-stage glue, now need not be coated with adhesive glue on laminating wafer, be made directly laminating.
4. the manufacture method of a kind of etch pattern surface according to claim 1 and 2 sound filtering chip encapsulating structure, it is characterised in that: described laminating wafer adopts glass material, insulant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203814.4A CN105810596A (en) | 2016-04-01 | 2016-04-01 | Fabrication method of etched surface acoustic filter chip package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203814.4A CN105810596A (en) | 2016-04-01 | 2016-04-01 | Fabrication method of etched surface acoustic filter chip package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105810596A true CN105810596A (en) | 2016-07-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610203814.4A Pending CN105810596A (en) | 2016-04-01 | 2016-04-01 | Fabrication method of etched surface acoustic filter chip package structure |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN108389834A (en) * | 2017-02-03 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | Chip pickup method and packaging technology |
| CN110690868A (en) * | 2019-09-27 | 2020-01-14 | 无锡市好达电子有限公司 | Novel wafer-level packaging method for filter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040029356A1 (en) * | 2001-01-18 | 2004-02-12 | Hans-Jorg Timme | Filter device and method for fabricating filter devices |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
-
2016
- 2016-04-01 CN CN201610203814.4A patent/CN105810596A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040029356A1 (en) * | 2001-01-18 | 2004-02-12 | Hans-Jorg Timme | Filter device and method for fabricating filter devices |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN108389834A (en) * | 2017-02-03 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | Chip pickup method and packaging technology |
| CN108389834B (en) * | 2017-02-03 | 2020-09-29 | 中芯国际集成电路制造(上海)有限公司 | Chip picking method and packaging process |
| CN110690868A (en) * | 2019-09-27 | 2020-01-14 | 无锡市好达电子有限公司 | Novel wafer-level packaging method for filter |
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Application publication date: 20160727 |
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