CN105870104A - Packaging structure with electromagnetic shielding function - Google Patents

Packaging structure with electromagnetic shielding function Download PDF

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Publication number
CN105870104A
CN105870104A CN201610190043.XA CN201610190043A CN105870104A CN 105870104 A CN105870104 A CN 105870104A CN 201610190043 A CN201610190043 A CN 201610190043A CN 105870104 A CN105870104 A CN 105870104A
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CN
China
Prior art keywords
chip
substrate
film
electro
encapsulating structure
Prior art date
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Pending
Application number
CN201610190043.XA
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Chinese (zh)
Inventor
王仕勇
包旭升
王孙艳
梁新夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN201610190043.XA priority Critical patent/CN105870104A/en
Publication of CN105870104A publication Critical patent/CN105870104A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

The invention relates to a packaging structure with an electromagnetic shielding function and belongs to the technical field of semiconductor packaging. The packaging structure comprises a substrate (1), wherein the substrate (1) is provided with a chip (3) in an inverted manner; a film (4) coats the upper part of the chip (3); the film (4) is combined with the surface and the side surfaces of the chip (3); a molding compound (5) wraps the upper part of the substrate (1); and a solder ball (6) is arranged at the bottom part of the substrate (1). According to the packaging structure with the electromagnetic shielding function, an adhesive film with a metal coating is directly attached to the surface of a radio-frequency chip or other chips requiring electromagnetic shielding, so that the target of shielding electromagnetic interference is achieved.

Description

A kind of encapsulating structure with electro-magnetic screen function
Technical field
The present invention relates to a kind of encapsulating structure with electro-magnetic screen function, belong to technical field of semiconductor encapsulation.
Background technology
Existing electromagnetic armouring structure is: directly on plastic-sealed body by the way of sputtering or plating, covers metal on plastic-sealed body surface, plays the effect of electromagnetic shielding.Its defect being primarily present is as follows:
1, carrying out sputtering or plating mode on plastic-sealed body surface, technique is complex, and cost is costly；
2, coated metal compares difficult control with the adhesion of plastic-sealed body；
3, for the module of multi-chip, it is difficulty with the electromagnetic shielding to local single-chip.
Summary of the invention
The technical problem to be solved is to provide a kind of encapsulating structure with electro-magnetic screen function for above-mentioned prior art, it uses a kind of adhesive film with the coat of metal to be placed directly against radio frequency chip surface or other need on the chip of electromagnetic shielding, thus reaches to shield the purpose of electromagnetic interference.
The present invention solves the technical scheme that the problems referred to above are used: a kind of encapsulating structure with electro-magnetic screen function, it includes substrate, chip is had by metal coupling upside-down mounting on described substrate, it is coated with film above described chip, described film and chip surface and side fit conjunction, described surface is encapsulated with plastic packaging material, and described base plate bottom is provided with stannum ball.
Described chip is common chip, is provided with underfill between described chip and substrate.
Described film is the surface adhesive film with metal level.
Described chip is surface acoustic wave chip, forms cavity between chip and substrate.
The chip of described film cladding has multiple.
Compared with prior art, it is an advantage of the current invention that:
1, the film and the chip that use the band coat of metal bond, it is to avoid the coat of metal is combined bad problem with plastic-sealed body；
2, encapsulation process is without adding traditional electroplating technology and metal sputtering processes, uses pad pasting mode, easy to operate, simplifies technological process, significantly reduces processing cost；
3, it is applicable to multi-chip modules encapsulation, one single chip can be played the effect of electromagnetic shielding, can more effectively avoid the electromagnetic interference between chip and chip；
4, it is applicable to the encapsulation of surface acoustic wave chip, encapsulation volume can be reduced with Simplified flowsheet step.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of encapsulating structure with electro-magnetic screen function of the present invention.
Fig. 2 is the schematic diagram of a kind of another embodiment of encapsulating structure with electro-magnetic screen function of the present invention.
Wherein:
Substrate 1
Metal coupling 2
Chip 3
Film 4
Plastic packaging material 5
Stannum ball 6
Underfill 7
Cavity 8.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figure 1, a kind of encapsulating structure with electro-magnetic screen function in the present embodiment, it includes substrate 1, chip 3 is had by metal coupling 2 upside-down mounting on described substrate 1, it is coated with film 4 above described chip 3, described film 4 combines with chip 3 surface and side, is encapsulated with plastic packaging material 5, is provided with stannum ball 6 bottom described substrate 1 above described substrate 1.
Described chip 3 is common chip, is provided with underfill 7 between described chip 3 and substrate 1.
Described film 4 is the surface adhesive film with metal level.
Its manufacture method comprises the steps:
Step one, chip is arranged on substrate by reverse installation process；
Step 2, take a film, carry out vacuum film pressing at chip upper surface so that film covers at upper surface of base plate, and fit with chip surface and side；
Step 3, removed the shielding unnecessary film of chip circumference by photoetching development etch process；
Step 4, other chips or passive device are electrically connected on substrate；
Step 5, substrate is encapsulated, plant ball, finally cut into single product.
Seeing Fig. 2, a kind of encapsulating structure with electro-magnetic screen function in the present embodiment, described chip 3 is surface acoustic wave chip, forms cavity 8 between chip 3 and substrate 1.
The chip of described film 4 cladding can have multiple.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the scope of the hereto appended claims.

Claims (5)

1. an encapsulating structure with electro-magnetic screen function, it is characterized in that: it includes substrate (1), chip (3) is had by metal coupling (2) upside-down mounting on described substrate (1), described chip (3) top is coated with film (4), described film (4) combines with chip (3) surface and side, described substrate (1) top is encapsulated with plastic packaging material (5), and described substrate (1) bottom is provided with stannum ball (6).
A kind of encapsulating structure with electro-magnetic screen function the most according to claim 1, it is characterised in that: described chip (3) is common chip, is provided with underfill (7) between described chip (3) and substrate (1).
A kind of encapsulating structure with electro-magnetic screen function the most according to claim 1, it is characterised in that: described film (4) is the surface adhesive film with metal level.
A kind of encapsulating structure with electro-magnetic screen function the most according to claim 1, it is characterised in that: described chip (3) is surface acoustic wave chip, forms cavity (7) between chip (3) and substrate (1).
5. according to a kind of encapsulating structure with electro-magnetic screen function described in claim 1 or 4, it is characterised in that: the chip (3) that described film (4) is coated with has multiple.
CN201610190043.XA 2016-03-30 2016-03-30 Packaging structure with electromagnetic shielding function Pending CN105870104A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610190043.XA CN105870104A (en) 2016-03-30 2016-03-30 Packaging structure with electromagnetic shielding function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610190043.XA CN105870104A (en) 2016-03-30 2016-03-30 Packaging structure with electromagnetic shielding function

Publications (1)

Publication Number Publication Date
CN105870104A true CN105870104A (en) 2016-08-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610190043.XA Pending CN105870104A (en) 2016-03-30 2016-03-30 Packaging structure with electromagnetic shielding function

Country Status (1)

Country Link
CN (1) CN105870104A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108601241A (en) * 2018-06-14 2018-09-28 环旭电子股份有限公司 A kind of SiP modules and its manufacturing method
CN108770227A (en) * 2018-06-14 2018-11-06 环旭电子股份有限公司 A kind of manufacturing method and SiP modules of the SiP modules based on secondary plastic
CN109119380A (en) * 2017-06-23 2019-01-01 Tdk株式会社 Use the electronic circuit package of composite magnetic sealing material
CN110648924A (en) * 2019-09-04 2020-01-03 广东芯华微电子技术有限公司 Large-board fan-out type chip packaging structure and manufacturing method thereof
CN110808214A (en) * 2019-11-07 2020-02-18 记忆科技(深圳)有限公司 Chip processing technique with electromagnetic shielding function
CN111816641A (en) * 2020-08-27 2020-10-23 华天科技（西安）有限公司 Electromagnetic shielding packaging structure and method based on secondary plastic packaging
CN113035855A (en) * 2021-03-01 2021-06-25 青岛歌尔智能传感器有限公司 Radio frequency module system-in-package structure, manufacturing method thereof and electronic equipment
CN113555493A (en) * 2021-07-20 2021-10-26 甬矽电子(宁波)股份有限公司 Semiconductor packaging structure and semiconductor packaging method
CN115642095A (en) * 2022-09-08 2023-01-24 武汉敏声新技术有限公司 Radio frequency module packaging structure and method
CN116864462A (en) * 2023-09-04 2023-10-10 唯捷创芯(天津)电子技术股份有限公司 Packaging structure and manufacturing method thereof

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US20090014847A1 (en) * 2007-07-13 2009-01-15 Industrial Technology Research Institute Integrated circuit package structure with electromagnetic interference shielding structure
CN202443968U (en) * 2012-01-16 2012-09-19 日月光半导体制造股份有限公司 Semiconductor packaging structure
CN103493198A (en) * 2012-09-11 2014-01-01 华为终端有限公司 Electronic device and manufacturing method thereof
KR20150047167A (en) * 2013-10-24 2015-05-04 앰코 테크놀로지 코리아 주식회사 EMI shielding device for semiconductor package and method for manufacturing the same

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CN1293485A (en) * 1999-10-15 2001-05-02 汤姆森无线电报总公司 Electron element packaging method
CN1794574A (en) * 2004-12-24 2006-06-28 富士通媒体部品株式会社 Electronic device and method of fabricating the same
US20090014847A1 (en) * 2007-07-13 2009-01-15 Industrial Technology Research Institute Integrated circuit package structure with electromagnetic interference shielding structure
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109119380A (en) * 2017-06-23 2019-01-01 Tdk株式会社 Use the electronic circuit package of composite magnetic sealing material
CN108770227B (en) * 2018-06-14 2021-07-13 环旭电子股份有限公司 SiP module manufacturing method based on secondary plastic package and SiP module
CN108770227A (en) * 2018-06-14 2018-11-06 环旭电子股份有限公司 A kind of manufacturing method and SiP modules of the SiP modules based on secondary plastic
CN108601241A (en) * 2018-06-14 2018-09-28 环旭电子股份有限公司 A kind of SiP modules and its manufacturing method
CN110648924A (en) * 2019-09-04 2020-01-03 广东芯华微电子技术有限公司 Large-board fan-out type chip packaging structure and manufacturing method thereof
CN110808214A (en) * 2019-11-07 2020-02-18 记忆科技(深圳)有限公司 Chip processing technique with electromagnetic shielding function
CN111816641A (en) * 2020-08-27 2020-10-23 华天科技（西安）有限公司 Electromagnetic shielding packaging structure and method based on secondary plastic packaging
CN113035855A (en) * 2021-03-01 2021-06-25 青岛歌尔智能传感器有限公司 Radio frequency module system-in-package structure, manufacturing method thereof and electronic equipment
WO2022183831A1 (en) * 2021-03-01 2022-09-09 青岛歌尔智能传感器有限公司 Radio frequency module system-in-package structure and method for manufacturing same, and electronic device
CN113035855B (en) * 2021-03-01 2022-10-18 青岛歌尔智能传感器有限公司 Radio frequency module system-in-package structure, manufacturing method thereof and electronic equipment
CN113555493A (en) * 2021-07-20 2021-10-26 甬矽电子(宁波)股份有限公司 Semiconductor packaging structure and semiconductor packaging method
CN115642095A (en) * 2022-09-08 2023-01-24 武汉敏声新技术有限公司 Radio frequency module packaging structure and method
CN115642095B (en) * 2022-09-08 2024-03-29 武汉敏声新技术有限公司 Radio frequency module packaging structure and method
CN116864462A (en) * 2023-09-04 2023-10-10 唯捷创芯(天津)电子技术股份有限公司 Packaging structure and manufacturing method thereof

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