CN109088613A - SAW filter and its packaging method and electronic equipment - Google Patents
SAW filter and its packaging method and electronic equipment Download PDFInfo
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- CN109088613A CN109088613A CN201810687275.5A CN201810687275A CN109088613A CN 109088613 A CN109088613 A CN 109088613A CN 201810687275 A CN201810687275 A CN 201810687275A CN 109088613 A CN109088613 A CN 109088613A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention provides a kind of SAW filter and its packaging method and electronic equipment, SAW filter passes through setting device wafer and cap plate, signal pattern and device are formed on device wafer and cap plate respectively, through-hole and pad are set on cap plate, device wafer and the bonding of cap plate, interdigital transducer is contained in closed cavity, first signal pattern is electrically connected by through-hole with pad, so as to transmit signal, it does not need that conducting wire is separately provided again, compared to other encapsulation technologies, structure is simple, and package dimension is small.
Description
Technical field
The invention belongs to electronic technology field more particularly to a kind of SAW filters and its packaging method and electronics to set
It is standby.
Background technique
With the fast development of technology, the package dimension of the radio frequency part of electronic equipment requires to be gradually reduced, and advanced
The multi-mode of wireless communication system, the development trend of multiband be strongly required the smaller component of development need, with further
Reduce the size of radio-frequency unit.SAW filter is vital component in electronic equipment, with superior filter
Wave energy, the size and height of SAW filter are mainly determined by encapsulating structure.
Current standard packaging techniques are CSP (Chip Scale Package chip type) encapsulation technologies, with previous SMD
Encapsulation technology is compared, volume miniaturization about 60%.The encapsulation technology of SAW filter is CSP (Chip Scale
Package chip type) encapsulation technology be on ceramic substrate making devices, and with chip bonding and obtain.Current technology by
In the use of ceramic substrate and the technique limitation of chip package, so that there are sizes for finally formed SAW filter
Defect bigger than normal, it is difficult to meet the requirement of small-sized encapsulated.
Summary of the invention
The object of the present invention is to provide a kind of packaging methods of SAW filter, are able to achieve the small-sized of encapsulating structure
Change.
To achieve the purpose of the present invention, the present invention provides the following technical solutions:
In a first aspect, the embodiment of the present invention provides a kind of packaging method of SAW filter, include the following steps:
Blind hole is made on cap plate, the cap plate further includes precut region, and the precut region is located at described
Blind hole periphery；
The first metal layer is made on the cap plate, the first metal layer covers the blind hole inner wall and the cap
Plate surface；
Metal material is filled in the blind hole；
The first metal layer of the cap plate surface is removed, retain the first metal layer in the blind hole and
The metal material；
The first signal pattern is deposited at the top of the blind hole, the first encapsulation of production pattern in the precut region；
SAW filter device is made on device wafer, the SAW filter device includes interdigital transducing
Device, second signal pattern and second encapsulation pattern, the second signal pattern be set to the interdigital transducer periphery, described second
It encapsulates pattern and is set to second signal pattern periphery；
The depositing second metal layer on the second signal pattern and the second encapsulation pattern；
The cap plate is bonded relatively with the device wafer, first signal pattern and the second signal pattern
Position is corresponding, and the first encapsulation pattern is corresponding with the second encapsulation pattern, so that the interdigital transducer is housed inside envelope
In closed chamber body；
It is ground the cap plate, so that the blind hole forms through-hole, exposes the first metal layer；
Pad is made to the surface of first signal pattern in the cap backboard；
The cap plate and the device wafer are cut along the precut region, obtains packaged surface acoustic wave filtering
Device.
Wherein, it when making the blind hole, is performed etching on the cap plate using dry etch process.
Wherein, the step of metal material is filled in the blind hole includes: using pulse current plating and reverse impulse electricity
Galvanic electricity depositing process fills metal material in the blind hole, and the metal material fills up the blind hole.
Wherein, the step of depositing the second metal layer includes: will be suitable by making a reservation for including at least golden and tin various metals
Sequence is sequentially depositing.
Wherein, preset temperature is heated to when bonding in an inert gas atmosphere, so that first signal pattern and described
First encapsulation pattern is bonded with the second metal layer that the various metals material for including at least gold and tin is formed.
Second aspect, the embodiment of the present invention provides a kind of SAW filter, including device wafer and cap plate, described
Interdigital transducer, second signal pattern and the second encapsulation pattern, the second signal pattern is formed on device wafer surface to set
In the interdigital transducer periphery, the second encapsulation pattern is set to second signal pattern periphery；The cap plate and institute
The opposite surface of device wafer is stated equipped with the first signal pattern, first signal pattern periphery is equipped with the first encapsulation pattern, and
The cap backboard is equipped with pad to the surface of first signal pattern, is additionally provided with through-hole in the cap plate, and described first
Signal pattern is electrically connected to the pad by the through-hole, and first signal pattern is bonded with the second signal pattern,
The first encapsulation pattern encapsulates pattern with described second and is bonded, and the interdigital transducer is contained in the device wafer, described
In the closed cavity that cap plate, first signal pattern and the second signal pattern are enclosed.
Wherein, the first metal layer and metal material are equipped in the through-hole, the first metal layer is bonded the through-hole
Inner wall, the metal material fill up the through-hole.
Wherein, be additionally provided with second metal layer on the second signal pattern, the second metal layer be including at least gold and
The various metals of tin, the various metals material are sequentially laminated on the second signal pattern, the second metal layer and institute
State the bonding of the first signal pattern.
Wherein, first signal pattern is copper material, and the second signal pattern is aluminium material.
The third aspect, the embodiment of the present invention provide any institute in a kind of electronic equipment, including the various embodiments of second aspect
The SAW filter stated.
Beneficial effects of the present invention:
The packaging method of SAW filter of the invention is used by setting cap plate and device wafer in cap
Blind hole is made on plate, and the first metal layer and metal material are made in blind hole, the first signal pattern is made at the top of blind hole, in device
Second signal pattern and second metal layer are made on part chip, cap plate are bonded with device wafer, then cut to obtain sound surface
Wave filter realizes the Wafer level packaging application of SAW filter, realizes the miniaturization of encapsulating structure, so that
The package dimension of SAW filter can make smaller.
SAW filter of the invention is by setting device wafer and cap plate, respectively in device wafer and cap plate
Through-hole and pad, device wafer and the bonding of cap plate, interdigital transducer is arranged in upper formation signal pattern and device on cap plate
It is contained in closed cavity, the first signal pattern is electrically connected by through-hole with pad, so as to transmit signal, is not needed again single
Solely setting conducting wire, compared to other encapsulation technologies, structure is simple, and package dimension is small.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 a is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 1 b is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 1 c is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 1 d is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 1 e is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 1 f is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 2 a is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 2 b is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 3 a is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 3 b is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 3 c is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 3 d is a kind of structural schematic diagram of a step of the packaging method of the SAW filter of embodiment；
Fig. 4 is a kind of structural schematic diagram of the SAW filter of embodiment.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of packaging method of SAW filter, includes the following steps:
Fig. 1 a is please referred to, and combines Fig. 2 a, a step are as follows: provides a cap plate 10,10 settings are pre- on the cap plate
The setting position of cutting region 101, precut region 101 is corresponding with the SAW filter size eventually formed.For example, a kind of
The size (length × width × height) for encapsulating the SAW filter completed is 1.0mm × 0.8mm × 0.25mm, then precut along this
The size (long × wide) for the cap plate 101 that the setting position in region 101 is cut down should be 1.0mm × 0.8mm.On cap plate 10
Multiple precut regions 101 are provided with, so that can cut to obtain the component of multiple SAW filters, example on cap plate 10
Such as, the whole size of cap plate 10 can be 4 inches, with 4 inch dimensions that the device wafer 20 being bonded with cap plate 10 is whole
It is identical so that the two be bonded completely after in an overall structure, then by cutting, then can form multiple SAW filters.Cap
LiTaO can be used in cover board 103(lithium tantalate) chip is as substrate, LiTaO3(lithium tantalate) has preferable dielectric, piezoelectricity, non-thread
Property the characteristics such as optics, Preset grating and high loss threshold, LiTaO3Chip acoustic speed with higher and good mechanical-electric coupling
Can, it is the preferred material for making SAW filter.In addition, LiNbO also can be used in cap plate 103(lithium niobate) chip conduct
Substrate, LiNbO3With LiTaO3Characteristic it is similar.
Please refer to Fig. 1 b, a step are as follows: make blind hole 102 on cap plate 10, the precut region 101 is set
In 102 periphery of blind hole.The quantity that blind hole 102 makes be it is multiple, multiple blind holes 102 partially form interdigital change made of enclosing
The top environment of energy device 21.When making the blind hole 102, carved on the cap plate 10 using dry etch process
Erosion, principle is that using plasma removes unnecessary material, and dry etch process can be in very small dimensions (micron level)
Lower etched features, the production especially suitable for SAW filter.
Fig. 1 c is please referred to, in a step: making the first metal layer 11, the first metal layer on the cap plate 10
11 cover 102 inner wall of blind hole and 10 surface of cap plate.The technique for making the first metal layer 11 can be to deposit, first
The material of metal layer 11 can be copper, by deposition the first metal layer 11 and 102 inner wall of blind hole be covered, so that in obtained sound table
The first metal layer 11 can be used for conduction in surface wave filter.
Fig. 1 d is please referred to, in a step: filling metal material 12 in the blind hole 102.Specifically, pulse can be used
Electric current plating and reverse pulse current electroplating technology fill metal material 12 in the blind hole 102, and the metal material 12 is filled out
The full blind hole 102.Metal material 12 can be copper, fill metal material 12, to enhance the structural strength of cap plate 10, and with it is blind
One of the first metal layer 11 on 102 inner wall of hole enhances electric conductivity.
Fig. 1 e is please referred to, in a step: the first metal layer 11 on 10 surface of cap plate being removed, institute is retained
State the first metal layer 11 and the metal material 12 in blind hole 102.Due to when making the first metal layer 11 in cap
10 surface of plate form cover the surface the first metal layer 11, and the first metal layer 11 on the surface be it is extra, need
It removing, when furthermore filling metal material 12 in blind hole 102, metal material 12 is inevitably deposited on 10 surface of cap plate,
The metal layer thickness that above-mentioned two process is deposited on 10 surface of cap plate is up to 15~20 μm, it is necessary to it is removed, it otherwise can shadow
The propagation of the sound wave of sound surface wave filter.Specifically, polished using mechanical polishing process on 10 surface of cap plate, with
It removes the first metal layer 11 on 10 surface of cap plate and is deposited on the metal material 12 on 10 surface of cap plate, and expose cap plate
10 Facing material.
Fig. 1 f is please referred to, in a step: the first signal pattern 13a is deposited at the top of the blind hole 10, in the pre-cut
Cut first encapsulation of the production of region 101 pattern 13b.One-time process system can be used in the encapsulation of first signal pattern 13a and first pattern 13b
Make, specifically, electroplating technology production can be used.First signal pattern 13a is covered on the top of blind hole 10, and with made in blind hole 102
The first metal layer 11 and metal material 12 of work connect；First encapsulation pattern 13b is covered on 101 top of precut region, and two
End extends to the two sides of precut region 101 respectively, so that when precut region 101 is cut off, two blocks of adjacent cap plates
There is the first encapsulation pattern 13b covering at 10 edges；In another embodiment, the first encapsulation pattern 13b can also be separately positioned on
The two sides at 101 top of precut region can so reduce the material of the first encapsulation of consumption pattern 13b.
Fig. 2 a is please referred to, in a step: making SAW filter device, the sound surface on device wafer 20
Wave filter device includes interdigital transducer 21, the encapsulation pattern 22b of second signal pattern 22a and second, the second signal figure
Case 22a is set to 21 periphery of interdigital transducer, and the second encapsulation pattern 22b is set to the periphery second signal pattern 22a.
Second signal pattern 22a is electrically connected with interdigital transducer 21, for providing radiofrequency signal to interdigital transducer 21.Interdigital transducer
21 can be used various patterns in the prior art, and details are not described herein.The encapsulation of second signal pattern 22a and second pattern 22b can
It is made using one-time process, specific technique can be plating.The encapsulation of second signal pattern 22a and second pattern 22b's
Material can be aluminium.The height of second signal pattern 22a is generally lower than interdigital transducer 21.Device wafer 20 and cap plate 10
Corresponding, then the setting position of second signal pattern 22a is corresponding with the first signal pattern 13a, the setting position of the second encapsulation pattern 22b
Set with first encapsulation pattern 13b it is corresponding, it is similar with cap plate 10, another precut region 201 also is provided on device wafer 20,
Second encapsulation pattern 22b is covered on another 201 top of precut region, and sets to two sides extension or the second encapsulation pattern 22b
Set the two sides in another precut region 201.The position and the precut area on cap plate 10 of another precut region 201
Domain 101 is corresponding, and after cutting off another precut region 201, the edge of two pieces of adjacent device wafers 20 is equipped with the second encapsulation
Pattern 22b.Device wafer 20 is identical with the material of cap plate 10, so that in the subsequent interdigital transducer 21 for making and being formed
Upper and lower environment is consistent, avoids problem of environmental pollution caused by different chips material, in addition, also may make cap plate 10 and device
Hot expansibility between chip 20 is consistent, so that the structure of the SAW filter formed is more stable.
Fig. 2 b is please referred to, in a step: sinking on the second signal pattern 22a and the second encapsulation pattern 22b
Product second metal layer.For ease of description, the second metal layer deposited on second signal pattern 22a is 23a, in the second package drawing
The second metal layer deposited on case 22b be 23b, the purpose of depositing second metal layer be in order to the first signal on cap plate 10
The encapsulation of pattern 13a and first pattern 13b is bonded.The step of depositing the second metal layer include: will include at least gold and
The various metals of tin are sequentially depositing in a predetermined order.Specifically, when the material of second signal pattern 22a is aluminium, in the second letter
The step of depositing second metal layer 23a includes according to the suitable of Ti-Ni-Au-Sn-Au (titanium-ni-au-Xi-gold) on number pattern 22a
Sequence deposits on the aluminium of second signal pattern 22a, and it is because aluminium is oxidized in air and forms position that such sequence, which is arranged,
Fine and close protective film in surface, direct nickel plating be it is very difficult, therefore, it is necessary to use metal titanium activator aluminium, so that nickel material
It can be deposited on aluminium, redeposited gold and tin are used for and the first signal pattern 13a solder bonds as welding material.Second letter
On number pattern 22a after depositing second metal layer 23a, height generally can be higher than the height of interdigital transducer 21, in this way, working as key
When closing device wafer 20 and cap plate 10, can just there are enough space interdigital transducers 21.On second encapsulation pattern 22b
Second metal layer 23b can on second signal pattern 22a second metal layer 23a structure and production method it is identical, certainly,
Can be different, for example, the second metal layer 23b on the second encapsulation pattern 22b can be made of different metals.
Fig. 3 a is please referred to, in a step: being bonded the cap plate 10 is opposite with the device wafer 20, described first
Signal pattern 13a is corresponding with the position second signal pattern 22a, the first encapsulation pattern 13b and second package drawing
Case 22b is corresponding, so that the interdigital transducer 21 is housed inside in closed cavity 30.It is heated in an inert gas atmosphere when bonding
To preset temperature, inert gas can be nitrogen, and preset temperature is 200 DEG C~400 DEG C, preferably 280 DEG C.First signal pattern
The second metal layer 23a deposited on 13a and second signal pattern 22a is bonded, the first encapsulation pattern 13b and the second encapsulation pattern
Deposited on 22b second metal layer 23b bonding so that the first signal pattern 13a and it is described first encapsulation pattern 13b with extremely
Few includes the second metal layer bonding of the various metals material formation of gold and tin.The technique being specifically bonded can be weldering
It connects, for example, the first signal pattern 13a is deposited on top for the second metal layer 23a on copper material, with second signal pattern 22a
Gold solder connect, the second metal layer 23b that deposits also is bonded fixation on the first encapsulation pattern 13b and the second encapsulation pattern 22b, thus
So that cap plate 10 and device wafer 20 are fixed to one.The device wafer 20, the cap plate 10, first signal
Pattern 13a, the second signal pattern 22a and second metal layer 23a thereon are enclosed the closed cavity 30, to accommodate fork
Finger transducer 21.First encapsulation pattern 13b, the second encapsulation pattern 22b and second metal layer 23b thereon form surface acoustic wave filter
The sealing structure of wave device.
Fig. 3 b is please referred to, in a step: being ground the cap plate 10, so that the blind hole 102 forms through-hole, expose institute
State the first metal layer 11.Specifically, grinding cap plate 10 deviates from the surface of the first signal pattern 13a, which can be ground to be formed
Plane exposes the bottom of blind hole 102, so that blind hole 102 becomes through-hole, i.e. exposing the first metal layer 11 can be further ground
And expose metal material 12.
Fig. 3 c is please referred to, in a step: making in the cap plate 10 backwards to the surface of the first signal pattern 13a
Pad 14.Pad 14 is metal, preferably tin.The setting position of pad 14 covers the position of the first metal layer 11 and metal material 12
It sets, since blind hole 102 is ground to as through-hole, so pad 12 can pass through the first metal layer 11 and metal material 12 and the first letter
Number pattern 13a connection is further electrically connected by second metal layer 23a and second signal pattern 22a with interdigital transducer 21
It connects, by the radio frequency chip in electronic equipment to 14 input radio frequency signal of pad, radiofrequency signal can reach interdigital transducer 21, from
And realize the function of SAW filter.
Fig. 3 d is please referred to, in a step: cutting the cap plate 10 along the precut region 101 and the device is brilliant
Piece 20 obtains packaged SAW filter.Entire cap plate 10 and device wafer 20 are cut into individual devices, can be used
In being installed on electronic equipment.
The present invention uses by setting cap plate 10 and device wafer 20 and makes blind hole 102 on cap plate 10, blind
Production the first metal layer 11 and metal material 12, make the first signal pattern 13a at the top of blind hole 102 in hole 102, in device crystalline substance
Second signal pattern 22a and second metal layer are made on piece 20, cap plate 10 are bonded with device wafer 20, then cut to obtain sound
Surface wave filter realizes the Wafer level packaging application of SAW filter, realizes the miniaturization of encapsulating structure,
The package dimension of SAW filter is made smaller.
The embodiment of the present invention provides a kind of electronic equipment, including SAW filter provided in an embodiment of the present invention.This
The SAW filter that inventive embodiments provide is made of Wafer level packaging, is had the characteristics that size is small, is suitable for
It is applied on various electronic equipments.Specifically, electronic equipment can be smart phone, mobile tablet computer, hand-held computer
Deng.
Referring to FIG. 4, the present invention provides a kind of SAW filter, including device wafer 20 and cap plate 10, it is described
Be formed on 20 surface of device wafer interdigital transducer 21, second signal pattern 22a and second encapsulation pattern 22b, described second
Signal pattern 22a is set to 21 periphery of interdigital transducer, and the second encapsulation pattern 22b is set to the second signal pattern
The periphery 22a；The cap plate 10 surface opposite with the device wafer 20 is equipped with the first signal pattern 13a, first letter
Number periphery pattern 13a is equipped with the first encapsulation pattern 13b and the cap plate 10 backwards to the surface of the first signal pattern 13a
Equipped with pad 14, through-hole (with reference to label 102 in Fig. 1 b) is additionally provided in the cap plate 10, the first signal pattern 13a is logical
It crosses the through-hole and is electrically connected to the pad 14, the first signal pattern 13a is bonded with the second signal pattern 22a, institute
It states the first encapsulation pattern 13b to be bonded with the second encapsulation pattern 22b, the interdigital transducer 21 is contained in the device wafer
20, in the closed cavity 30 that the cap plate 10, the first signal pattern 13a and the second signal pattern 22a are enclosed.
By setting device wafer 20 and cap plate 10, through-hole is set on cap plate 10, and the first signal pattern 13a passes through
The through-hole is electrically connected with pad 14, the first signal pattern 13a and second signal pattern 22a bonding, the first encapsulation pattern 13b and the
Two encapsulation pattern 22b bondings, and the closed cavity 30 for accommodating interdigital transducer 21 is formed, the first encapsulation pattern 13b and the second envelope
Dress pattern 22b bonds together to form sealing structure, to form the structure of SAW filter, realizes SAW filter
Wafer-level packaging realizes the miniaturization of encapsulating structure.
In a kind of embodiment, the first metal layer 11 and metal material 12, the first metal layer 11 are equipped in the through-hole
It is bonded the inner wall of the through-hole, the metal material 12 fills up the through-hole.
In a kind of embodiment, second metal layer 23a, the second metal layer are additionally provided on the second signal pattern 22a
23a is the various metals including at least gold and tin, and the various metals are sequentially laminated on the second signal pattern 22a, institute
Second metal layer 23a is stated to be bonded with the first signal pattern 13a.
Above disclosed is only a preferred embodiment of the present invention, cannot limit the power of the present invention with this certainly
Sharp range, those skilled in the art can understand all or part of the processes for realizing the above embodiment, and weighs according to the present invention
Benefit requires made equivalent variations, still belongs to the scope covered by the invention.
Claims (10)
1. a kind of SAW filter, which is characterized in that including device wafer and cap plate, shape on the device wafer surface
At having interdigital transducer and second signal pattern, the second signal pattern is set to the interdigital transducer periphery；The cap
The plate surface opposite with the device wafer is equipped with the first signal pattern, table of the cap backboard to first signal pattern
Face is equipped with pad, is additionally provided with through-hole in the cap plate, first signal pattern is electrically connected to the weldering by the through-hole
Disk, first signal pattern are bonded with the second signal pattern, and the interdigital transducer is contained in the device wafer, institute
It states in the closed cavity that cap plate, first signal pattern and the second signal pattern are enclosed.
2. SAW filter as described in claim 1, which is characterized in that be equipped with the first metal layer and gold in the through-hole
Belong to material, the first metal layer is bonded the inner wall of the through-hole, and the metal material fills up the through-hole.
3. SAW filter as described in claim 1, which is characterized in that be additionally provided with second on the second signal pattern
Metal layer, the second metal layer are the various metals including at least gold and tin, and the various metals material is sequentially laminated on institute
It states on second signal pattern, the second metal layer is bonded with first signal pattern.
4. SAW filter as described in claim 1, which is characterized in that the SAW filter further includes first
Pattern and the second encapsulation pattern are encapsulated, the first encapsulation pattern, which is set to, searches the first signal pattern of book periphery, second encapsulation
Pattern is set to second signal pattern periphery, and the first encapsulation pattern is bonded with the second encapsulation pattern.
5. a kind of electronic equipment, which is characterized in that including the SAW filter as described in Claims 1-4 is any.
6. a kind of packaging method of SAW filter, which comprises the steps of:
Blind hole and the first metal layer are made on cap plate, the first metal layer covers the blind hole inner wall and the cap plate
Surface；
The first metal layer of the cap plate surface is removed；
The first signal pattern is deposited at the top of the blind hole；
On device wafer make SAW filter device, the SAW filter device include interdigital transducer and
Second signal pattern, the second signal pattern are set to the interdigital transducer periphery；
The cap plate is bonded relatively with the device wafer, first signal pattern and the second signal pattern position
It is corresponding, so that the interdigital transducer is housed inside in closed cavity；
It is ground the cap plate, so that the blind hole forms through-hole, exposes the first metal layer；
Pad is made to the surface of first signal pattern in the cap backboard；
The cap plate and the device wafer are cut, packaged SAW filter is obtained.
7. the packaging method of SAW filter as claimed in claim 6, which is characterized in that making first metal
Step after layer further include: fill metal material in the blind hole.
8. the packaging method of SAW filter as claimed in claim 7, which is characterized in that fill gold in the blind hole
The step of belonging to material includes: to fill metal material in the blind hole using pulse current plating and reverse pulse current electroplating technology
Material, the metal material fill up the blind hole.
9. the packaging method of SAW filter as claimed in claim 6, which is characterized in that deposit the second metal layer
The step of include: that will include at least gold and the various metals of tin be sequentially depositing in a predetermined order.
10. the packaging method of SAW filter as claimed in claim 9, which is characterized in that in inert gas when bonding
Preset temperature is heated in atmosphere so that first signal pattern and the first encapsulation pattern with include at least gold and tin
The second metal layer bonding that the various metals material is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810687275.5A CN109088613A (en) | 2018-06-28 | 2018-06-28 | SAW filter and its packaging method and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810687275.5A CN109088613A (en) | 2018-06-28 | 2018-06-28 | SAW filter and its packaging method and electronic equipment |
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| CN109088613A true CN109088613A (en) | 2018-12-25 |
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| CN201810687275.5A Pending CN109088613A (en) | 2018-06-28 | 2018-06-28 | SAW filter and its packaging method and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130481A (en) * | 2019-12-31 | 2020-05-08 | 诺思(天津)微系统有限责任公司 | Semiconductor structure with stacked units, manufacturing method and electronic equipment |
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| CN111130481A (en) * | 2019-12-31 | 2020-05-08 | 诺思(天津)微系统有限责任公司 | Semiconductor structure with stacked units, manufacturing method and electronic equipment |
| CN111130481B (en) * | 2019-12-31 | 2021-06-22 | 诺思(天津)微系统有限责任公司 | Semiconductor structure with stacked units, manufacturing method and electronic equipment |
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