JP5340756B2 - Electronic component and manufacturing method thereof - Google Patents

Description

  The present disclosure relates to an electronic component and a manufacturing method thereof.

  As one of electronic components, a surface acoustic wave device (hereinafter referred to as a SAW device) is known. Surface acoustic wave devices are widely used in filter elements and oscillators of, for example, television receivers, video tape recorders, DVD (Digital Versatile Disk) recorders, mobile phones and the like.

  Currently, SAW devices are employed in various circuits that process radio signals in a frequency band of 45 MHz to 2 GHz, for example. Examples of circuits in which the SAW device is employed include a transmission band-pass filter, a reception band-pass filter, a local transmission filter, an antenna duplexer, an intermediate frequency filter, and an FM modulator. There is a duplexer as a circuit in which the reception filter and the transmission filter described above are combined into one.

  FIG. 1 is a block diagram illustrating a schematic configuration of a duplexer. As shown in FIG. 1, the duplexer 102 includes a phase matching circuit 103, a reception filter 104, and a transmission filter 105 that are integrated. The duplexer 102 extracts a signal of only a predetermined frequency band from the reception signal input via the antenna 101 in the reception filter 104 and outputs the signal from the terminal 106. A transmission signal input via the terminal 107 is output from the antenna 101 via the transmission filter 105.

  In recent years, these signal processing devices have been reduced in size, and electronic components such as SAW devices used have been increasingly required to be downsized. In particular, surface-mounted and low-profile SAW devices have been required for portable electronic devices such as mobile phones.

  A SAW device that satisfies these requirements is disclosed in Patent Document 1. Patent Document 1 discloses a structure in which a package substrate, a SAW device chip, and a peripheral portion are brazed and sealed with a metal material such as solder.

  FIG. 2 is a cross-sectional view of the SAW device disclosed in Patent Document 1. As shown in FIG. In FIG. 2, the SAW device chip has an electrode 211 for exciting and receiving SAW on one main surface on the piezoelectric substrate 210. On the same main surface of the piezoelectric substrate 210, electrode pads 212 for inputting / outputting electric signals are arranged. The electrode pad 212 includes a metal layer that can be brazed with a metal material such as solder. Further, on the outer peripheral surface of the SAW device chip, a sealing portion 203 for performing brazing sealing with solder is disposed. Similar to the electrode pad 212, the sealing portion 203 includes a metal layer that can be brazed with a metal material such as solder.

  The package substrate 220 includes an external terminal 222, a pad portion 233 that is formed on the surface opposite to the external terminal 222 and electrically connected to the SAW device chip 210, and a sealing portion that faces the sealing portion 203 of the SAW device chip 210. 232. Both the pad portion 233 and the sealing portion 232 include a metal layer that can be brazed with a metal material such as solder.

  The external terminal 222 and the pad portion 233 are electrically connected by a through wiring 221 that penetrates the package substrate 220. The SAW device chip 210 and the package substrate 220 are so-called flip chip bonded via metal bumps 240.

  Further, in the region where the SAW device chip 210 and the package substrate 220 face each other, the vicinity of the outer peripheral edge of the SAW device chip 210 is hermetically sealed with a sealing solder 241.

  FIG. 3 is a perspective view of a duplexer having an acoustic wave device using the package structure shown in FIG. As shown in FIG. 3, the duplexer has a reception filter chip 302, a transmission filter chip 303, and a matching circuit chip 304 mounted on a ceramic substrate 301. Further, the duplexer is sealed with a metal lid 305 (broken line in FIG. 3) disposed so as to cover the reception filter chip 302, the transmission filter chip 303, and the matching circuit chip 304.

  FIG. 4 shows the isolation characteristics of the duplexer shown in FIG. In FIG. 4, the low frequency side shows the isolation characteristic of the transmission filter band, and the high frequency side shows the isolation characteristic of the reception filter band.

  JP 2004-129193 A

  However, as shown in FIG. 3, the duplexer in which the back side (the side on which the reception filter chip 302 and the like are mounted) is sealed with the metal lid 305 is more than the duplexer that is not sealed with the metal lid 305. There is a problem that the isolation characteristic of the band is poor. That is, by sealing the back surface of the duplexer with metal, the electromagnetic field of the transmission filter spreads to the reception filter side, which deteriorates the isolation characteristics.

  An object of this invention is to provide the electronic component which can improve an isolation characteristic, and its manufacturing method.

  An electronic component disclosed in the present application includes a substrate, a plurality of device chips mounted on the substrate, and a conductive lid disposed to cover at least an upper portion of the device chip. And it is further provided with the wall part which is distribute | arranged between these device chips and has electroconductivity, and the said wall part couple | bonds with the said cover body, and is spaced apart from the said board | substrate.

  A first manufacturing method of an electronic component disclosed in the present application includes a step of mounting a plurality of device chips on a substrate, a step of mounting bonding wires in predetermined gaps in the plurality of device chips, and a metal on the device chip. A step of disposing a plating film; and a step of heating and melting and pressurizing the solder of the metal plating film to cause the metal dissolved from the metal plating film to adhere to the bonding wire.

  A second manufacturing method of an electronic component disclosed in the present application includes a step of mounting a plurality of device chips on a substrate and a liquid that can impart wettability and conductivity to the device chip. A step of immersing a part, a step of disposing a metal plating film in at least the region of the device chip to which the liquid has adhered, a metal melted from the metal plating film is heated and melted and pressed, and the device chip and the device A step of closely contacting the package substrate, and in the dipping step, the liquid is attached to a predetermined gap in the plurality of device chips.

  A third manufacturing method of an electronic component disclosed in the present application includes a step of mounting a plurality of device chips on a package substrate, a step of etching a conductive substrate to form irregularities, and the package substrate and the conductive substrate. In the step of forming irregularities on the conductive substrate, the concave portion capable of accommodating the device chip, and the package substrate and the conductive substrate are bonded together in the plurality of device chips. And a convex portion arranged in a predetermined gap.

  According to the disclosure of the present application, the isolation characteristics can be improved.

Duplexer block diagram Sectional drawing of the electronic component currently disclosed by patent document 1 The perspective view of the duplexer which has the structure currently disclosed by patent document 1 Characteristic diagram showing isolation characteristics of duplexer The perspective view of the electronic component concerning embodiment Sectional drawing of the ZZ part in FIG. 5A Characteristic diagram showing isolation characteristics Enlarged view of portion Y in FIG. 6A Sectional drawing of the electronic component concerning embodiment Characteristic diagram showing gap dependency of isolation characteristics (A) is a top view for demonstrating the 1st manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 1st manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 1st manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 1st manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 2nd manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 2nd manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 2nd manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 2nd manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view for demonstrating the 2nd manufacturing method of an electronic component, (b) is sectional drawing of the WW part in (a). (A) is a top view of a cover body, (b) is sectional drawing of the XX part in (a). Sectional drawing for demonstrating the 2nd manufacturing method of an electronic component Sectional drawing for demonstrating the 2nd manufacturing method of an electronic component Communication module block diagram Block diagram of communication device

  The electronic component according to the embodiment of the present invention can take the following aspects based on the above configuration.

  That is, in the electronic component, the device chip can be configured to be at least two acoustic wave filters.

  In the electronic component, the wall portion may be formed integrally with the lid.

  In the electronic component, the device chip may be a duplexer including at least a transmission filter and a reception filter.

  In the electronic component, the wall portion may be arranged between a device chip having the transmission filter and a device chip having the reception filter.

  The electronic component may further include a device chip having a matching circuit.

  In the electronic component, the wall portion may be arranged between a device chip having the matching circuit and a device chip having the transmission filter.

  In the electronic component, the size of the gap between the wall portion and the substrate is larger than twice the interval between the device chip and the substrate, and the total of the interval and the size of 3/5 of the device chip. The configuration can be smaller than the value.

  In the electronic component, the device chip may be mounted on the substrate by flip chip bonding.

  In the electronic component, the lid may have a configuration in which at least a portion in contact with the substrate and the device chip is formed with solder.

  In the electronic component, the lid may be made of silicon.

  In the electronic component, the lid may have a configuration in which a metal layer is formed on a surface facing the device chip.

  An electronic component manufacturing method includes a step of mounting a plurality of device chips on a substrate formed of ceramic, a step of mounting bonding wires in predetermined gaps in the plurality of device chips, and a solder plating film on the device chip. And a step of heat-melting and pressurizing the solder of the solder plating film so that the solder and the bonding wire are in close contact with each other.

  A method of manufacturing an electronic component includes a step of mounting a plurality of device chips on a substrate formed of ceramic, and a part of the device chip in a liquid capable of imparting wettability and conductivity to the device chip. A step of immersing, a step of disposing a solder plating film in at least the region of the device chip to which the liquid has adhered, and soldering and pressurizing the solder of the solder plating film, and the device chip and the package substrate. In the dipping step, the liquid is adhered to a predetermined gap in the plurality of device chips.

  In the method for manufacturing an electronic component, the liquid may be a method having an electroless tin plating solution as a main component.

  An electronic component manufacturing method includes a step of mounting a plurality of device chips on a package substrate made of ceramic, a step of etching a silicon substrate to form irregularities, and the package substrate and the silicon substrate are bonded together In the step of forming irregularities on the silicon substrate, when the recess capable of accommodating the device chip and the package substrate and the silicon substrate are bonded together, And a convex portion disposed in the gap.

  In the method for manufacturing an electronic component, the method may further include a step of forming a metal layer on the surface of the silicon substrate on which the unevenness is formed.

  In the method of manufacturing an electronic component, the method may include a step of forming a conductive adhesive layer in a portion of the silicon substrate in contact with the package substrate before the step of bonding the package substrate and the silicon substrate.

(Embodiment)
[1. Configuration of electronic parts)
FIG. 5A is a perspective view of a duplexer that is an example of the electronic component of the present embodiment. FIG. 5B is a cross-sectional view taken along the line ZZ in FIG. 5A. In the present embodiment, the duplexer is described as an example of the electronic component. However, any electronic component including at least a plurality of filters may be used. For example, a dual filter including a plurality of reception filters may be used.

  As shown in FIG. 5A and FIG. 5B, the duplexer has a reception filter chip 2, a transmission filter chip 3, and a matching circuit chip 4 mounted on a package substrate 1. The reception filter chip 2, the transmission filter chip 3, and the matching circuit chip 4 are covered with a metal lid 5. The lid 5 can be formed of, for example, solder. A wall 6 is disposed in the gap between the transmission filter chip 3 and the reception filter chip 2 and the matching circuit chip 4.

  The wall portion 6 is integrally formed on the inner surface of the lid body 5. The wall 6 is made of metal. The wall 6 is preferably formed of a metal having good wettability with respect to a substrate of a device chip such as the reception filter chip 2. For example, solder can be used as the material of the wall portion 6, which can be formed simultaneously with the lid 5 formed of solder. When solder is used as the material of the wall portion 6, since wettability with respect to a substrate of a general device chip (for example, lithium niobate or lithium tantalate) is poor, it is preferable to provide means for supplementing wettability. The means for compensating the wettability of the solder will be described later in the [First manufacturing method] and [Second manufacturing method] columns. The wall 6 is separated from the package substrate 1. That is, there is a gap 7 between the lower end 6 a of the wall 6 and the package substrate 1.

  FIG. 6A shows the result of analyzing the duplexer shown in FIGS. 5A and 5B by electromagnetic field simulation. 6B is an enlarged view of a Y portion in FIG. 6A. 6A and 6B, the solid line characteristics are the analysis results in the duplexer shown in FIGS. 5A and 5B, and the broken line characteristics are the analysis results in the conventional duplexer (see, for example, FIG. 3). Since the metal wall portion 6 is provided between the reception filter chip 2 and the transmission filter chip 3, electromagnetic waves emitted from the transmission filter chip 3 are less likely to leak to the reception filter chip 2 side. As shown in FIG. 5, the isolation characteristics of the transmission band and the reception band of the duplexer can be improved.

  Hereinafter, the relationship between the gap between the wall 6 and the package substrate 1 and the isolation characteristics will be described.

  The duplexer used for the analysis of the isolation characteristic is a duplexer having a structure shown in FIG. 7A. In FIG. 7A, the thickness T1 of the Au bump 8 is 20 μm. Regarding the thickness of the device chip mounted on the package substrate 1, the thickness T2 of the reception filter chip 2 and the transmission filter chip 3 was 250 μm, and the matching circuit chip 4 (not shown in FIG. 7A) was 300 μm. The thickness T3 of the package substrate 1 was 196 μm. Since the matching circuit chip 4 is thicker than the reception filter chip 2 and the transmission filter chip 3, the height T5 of the lid 5 on the package substrate 1 is 385 μm, and the upper thickness T4 is 115 μm. Moreover, thickness T6 of the wall part 6 was 50-100 micrometers.

  In the duplexer shown in FIG. 7A, the isolation dimension of the reception filter chip 2 and the transmission filter chip 3 was measured by changing the gap dimension G between the package substrate 1 and the wall portion 6. FIG. 7B shows the result of measuring the gap dependency of the isolation characteristics. In FIG. 7B, the solid line characteristic indicates the difference in the improvement degree of the band suppression of the transmission filter chip 3, and the broken line characteristic. The difference of the improvement degree of the band suppression of the reception filter chip 2 is shown. As indicated by the broken line in FIG. 7B, it has been found that the isolation characteristics of the reception band are improved by setting the gap G to 200 μm or less. On the other hand, with respect to the isolation characteristics of the transmission band, which is the main purpose of improvement, an improvement of 0.1 dB or more was observed when the gap G was in the range of 45 μm to 180 μm, as shown by the solid line in FIG. 7B.

According to the present embodiment, the gap G is larger than the gap between the device chip and the package substrate 1, that is, equivalent to twice the thickness T1 of the Au bump 8, and the thickness of the device chip is equal to the thickness T1 of the Au bump 8. Isolation characteristics can be improved in both the transmission band and the reception band by setting the thickness of about 3/5 of the thickness T2 to a range that is the sum of the thicknesses. That is, from the viewpoint of improving isolation characteristics, the gap G is
(T1 × 2) <G <(T1 + T2 × 3/5) (Formula 1)
It is preferable that

[2. Manufacturing method of electronic components]
[2-1. First production method]
8A to 8D show a first manufacturing method of a duplexer which is an example of the electronic component of the present embodiment. The manufacturing method shown in FIGS. 8A to 8D is a manufacturing method of a duplexer in which a lid is formed of solder. 8A to 8D are plan views of the duplexer, and FIG. 8B is a cross-sectional view of the WW portion in FIG.

  First, as shown in FIG. 8A, a device chip is mounted on a package substrate 11 made of ceramic that can be multi-faced. The device chips mounted on the package substrate 11 are the reception filter chip 12, the transmission filter chip 13, and the matching circuit chip 14 in this example. Each device chip is electrically bonded to a wiring pattern on the package substrate 11 via Au bumps 18. Moreover, lithium niobate and lithium tantalate can be used for the substrate of the device chip.

  Next, as shown in FIG. 8B, Au wires 15 are bonded to dummy terminals 16 provided in advance on both ends of the package substrate 11. The Au wire 15 is disposed in a gap between device chips mounted on the package substrate 11. In the present embodiment, the Au wire 15 is passed between the transmission filter chip 13 and the reception filter chip 12 and the matching circuit chip 14. 8B shows a configuration in which one Au wire 15 is arranged for one electronic component, but actually, a plurality of sets of device chips are arranged on a large package substrate (for example, 50 mm square). The reception filter chip 12 and the transmission filter chip 13 are aligned and mounted such that the boundary lines are arranged in a line, and one Au wire 15 is arranged on the boundary line arranged in a line.

  In general, when flip chip bonding is performed, a gap G1 of about 50 μm is formed between the device chips. In this case, for example, by using the Au wire 15 having an outer diameter G2 of φ30 μm, the Au wire 15 can be disposed between the device chips. Further, the Au wire 15 can be held at a desired position by adjusting the angle at the time of bonding of the Au wire 15 or the like. Here, the Au wire 15 is arranged so that the gap G3 between the Au wire 15 and the package substrate 11 has a size obtained by calculation in advance. It is preferable that the gap G3 has a size that falls within the range shown in the above-described Expression 1.

  Next, as shown in FIG. 8C, a metal sheet (hereinafter referred to as a solder film) 17 on which solder plating has been performed in advance is placed on the package substrate 11 on which the device chip is mounted. Next, the solder film 17 is heated and melted from above and pressed to perform solder sealing. At that time, by adjusting the pressure applied to the solder film 17, the molten solder is pushed into the gap between the device chips (particularly, between the transmission filter chip 13, the reception filter chip 12, and the matching circuit chip 14). Contact with the Au wire 15. Since the Au wire 15 has good wettability with respect to the solder, the molten solder gets wet. Further, the Au wire 15 is melted by heat during heating and is bonded to the solder. By cooling in a state where the molten Au wire 15 and the solder are combined, the solder and Au are solidified in an integrated state, and the solder sealing is completed. Thereby, a metal wall part can be formed to the position where Au wire 15 was arranged. The solder covers the device chip mounted on the package substrate 11 and is bonded to the package substrate 11.

  Next, as shown in FIG. 8D, the package substrate 11 is diced for each duplexer and separated into individual pieces. This completes the duplexer.

  As described above, according to the first manufacturing method, when the wall portion is formed with solder, a material having good wettability with respect to solder (Au wire 15 in this example) is aligned with the transmission filter chip 13 and the reception filter chip 12. By disposing it between the circuit chip 14, the melted solder can be guided between the device chips, so that a wall portion can be formed.

  In this manufacturing method, the Au wire is used as a means for supplementing the wettability with respect to the solder. However, the material is not limited to Au as long as the material has good wettability with respect to the solder.

  Further, in the present manufacturing method, one Au wire is arranged for a plurality of duplexers, but one Au wire may be arranged for one duplexer.

  In the present manufacturing method, the lid 5 and the wall 6 are formed of solder. However, if the effects of the present embodiment can be obtained, they can be formed of a metal other than solder.

  In this manufacturing method, the package substrate 11 is realized by a ceramic substrate, but the present invention is not limited to this. The package substrate 11 can be realized by a resin printed circuit board or the like.

[2-2. Second production method]
9A to 9D show a second manufacturing method of a duplexer that is an example of the electronic component of the present embodiment. The manufacturing method shown in FIGS. 9A to 9D is a manufacturing method of a duplexer in which a lid is formed of solder. 9A to 9D are plan views of the duplexer, and FIG. 9B is a cross-sectional view of the WW portion in FIG. 9A. 9A to 9D, the same components as those of the duplexer illustrated in FIGS. 8A to 8D are denoted by the same reference numerals.

First, as shown in FIG. 9A, a device chip is mounted on a package substrate 11 made of ceramic that can be multi-faced. The device chips to be mounted are the reception filter chip 12, the transmission filter chip 13, and the matching circuit chip 14 in this example. Each device chip is electrically bonded to a wiring pattern on the package substrate 11 via Au bumps 18. Further, lithium niobate (LiNbO ₃ ) or lithium tantalate (LiTaO ₃ ) can be used for the substrate of the device chip.

  Next, as shown in FIG. 9B, the back surface side of the device chip mounted on the package substrate 11 is immersed in the liquid 21 in the liquid tank 20. In the present embodiment, the liquid 21 that improves the wettability of the device chip on the back surface of the device chip (the back surface of the surface bonded to the Au bump 18, for example, the surfaces 12 a and 13 a shown in FIG. 9B) in the liquid tank 20. Filled. As the liquid 21, for example, an electroless tin plating solution is preferably used. The electroless plating solution is a liquid that can be plated by generally attaching conductive fine particles to the workpiece surface. Since the back surface and the side surface of the device chip (surfaces adjacent to the back surface, for example, surfaces 12b and 13b shown in FIG. 9B) are generally roughened, conductive fine particles are likely to adhere.

  Next, as shown in FIG. 9C, a metal sheet (hereinafter referred to as a solder film) 17 on which solder plating has been performed in advance is placed on the package substrate 11 on which the device chip is mounted. Next, the solder film 17 is heated and melted from above and pressed to perform solder sealing. When the solder film 17 is melted, the melted solder gets wet to the area where the conductive fine particles are attached on the back and side surfaces of the device chip. Therefore, when the device chip is immersed in the liquid 21 in the step shown in FIG. 9B, the gap G4 between the liquid surface of the liquid 21 and the surface of the package substrate 11 is set in the liquid 21 so that the size is obtained by calculation in advance. Set the amount of immersion. The gap G4 is preferably a dimension that falls within the range of the dimension G shown in the above-described Expression 1. Thereby, in the step shown in FIG. 9C, the solder can be attached to a desired height in the device chip.

  The melted solder is solidified by cooling, and the solder sealing is completed. Thus, the metal (solder) wall 17a can be formed up to the region where the conductive fine particles are adhered in the step shown in FIG. 9B. The solder covers the device chip mounted on the package substrate 11 and is bonded to the package substrate 11.

  Next, as shown in FIG. 9D, the package substrate 11 is diced for each duplexer and separated into individual pieces. This completes the duplexer.

  As described above, in the second manufacturing method, since the device chip is immersed in the liquid 21 that improves the wettability of the solder before the wall portion 17a is formed with the solder, the solder wets the device chip. The wall portion 17a can be formed with high accuracy.

  Further, since the device chip is merely immersed in the liquid 21 in order to improve the wettability of the molten solder, there is an advantage that the process becomes simple.

  In the present manufacturing method, the lid 5 and the wall 6 are formed of solder. However, if the effects of the present embodiment can be obtained, they can be formed of a metal other than solder.

  In this manufacturing method, the package substrate 11 is realized by a ceramic substrate, but the present invention is not limited to this. The package substrate 11 can be realized by a resin printed circuit board or the like.

[2-3. Third production method]
10A to 10D show a third method for manufacturing a duplexer which is an example of the electronic component of the present embodiment. The manufacturing method shown in FIGS. 10A to 10D is a manufacturing method of a duplexer in which a lid is formed of silicon. (A) in FIG. 10A-FIG. 10B shows the top view of a duplexer or a cover body. FIG. 10A (b) shows a cross-sectional view of the WW portion in FIG. 10A (a). FIG. 10B (b) is a cross-sectional view taken along a line XX in FIG. 10B (a). 10C and 10D show cross-sectional views of the duplexer. 10A to 10D, the same components as those of the duplexer illustrated in FIGS. 8A to 8D are denoted by the same reference numerals.

  First, as shown in FIG. 10A, a device chip is mounted on a package substrate 11 made of ceramic that can be multi-faced. The device chips mounted on the package substrate 11 are the reception filter chip 12, the transmission filter chip 13, and the matching circuit chip 14 in this example. Each device chip is electrically bonded to a wiring pattern on the package substrate 11 via Au bumps 18.

  On the other hand, as shown in FIG. Specifically, chemical or physical etching processes such as wet etching, dry etching, and sand blasting are performed to form the recesses 19a, 19b, 19c, and the wall 19d in the silicon substrate. The recess 19a is formed so as to have at least an inner dimension capable of accommodating the reception filter chip 12. The recess 19b is formed so as to have at least an inner dimension capable of accommodating the transmission filter chip 13. The recess 19c is formed to have at least an internal dimension that can accommodate the matching circuit chip 14. The wall portion 19d is formed such that the difference dimension G5 from the thickness dimension of the entire lid body 19 is a dimension obtained by calculation in advance. The dimension G5 is preferably a dimension that falls within the range of the dimension G shown in Equation 1 above. Further, the width G6 of the wall portion 19d is formed to be smaller than at least the gap G7 (see FIG. 10A) between the transmission filter chip 13, the reception filter chip 12, and the matching circuit chip 14. In addition, as a method of forming unevenness on the lid 19, a general silicon processing method used for device formation such as MEMS (Micro Electro Mechanical Systems) can be used. Further, when high-resistance silicon is used as the material of the lid 19, it is preferable to form a conductive layer on the surface of the lid 19 where the irregularities are formed by a method such as vapor deposition.

  Next, a conductive adhesive layer 22 is formed on a portion of the lid 9 that contacts the package substrate 11. The adhesive layer 22 can be formed, for example, by applying and baking a solder paste.

  Next, as shown in FIG. 10C, the package substrate 11 and the lid 19 are brought into contact with each other and heated. At this time, the reception filter chip 12 is accommodated in the recess 19a formed in the lid 19, the transmission filter chip 13 is accommodated in the recess 19b, and the matching circuit chip 14 (see FIG. 10A) is in the recess 19c (see FIG. 10B). The lid 19 is brought into contact with the package substrate 11 so as to be accommodated. By performing the heat treatment, the adhesive layer 22 is melted, and the package substrate 11 and the lid 19 can be bonded.

  Next, as shown in FIG. 10D, the package substrate 11 is diced for each duplexer and separated into individual pieces. This completes the duplexer. Since the wall portion 19d is formed so as to have a difference size of the dimension G5 with respect to the lid 19 as shown in FIG. 10B (b), the package is bonded to the package substrate 11 as shown in FIG. 10D. A gap having a dimension G5 is formed between the substrate 11 and the substrate 11.

  According to this manufacturing method, since the silicon processing technique can be used, the lid 19 having excellent dimensional accuracy can be formed. Therefore, the dimensional accuracy of the wall portion 19d can be improved.

[3. (Configuration of communication module)
FIG. 11 shows an example of a communication module including a duplexer having the structure of the electronic component according to the present embodiment. As shown in FIG. 11, the duplexer 62 includes a reception filter 62a and a transmission filter 62b. The reception filter 62a is connected to reception terminals 63a and 63b corresponding to, for example, balanced output. The transmission filter 62b is connected to the transmission terminal 65 via the power amplifier 64. Here, the duplexer 62 can be realized by a duplexer having the structure of the electronic component according to the present embodiment.

  When performing a reception operation, the reception filter 62a passes only a signal in a predetermined frequency band among reception signals input via the antenna terminal 61, and outputs the signal from the reception terminals 63a and 63b to the outside. Further, when performing a transmission operation, the transmission filter 62b passes only a signal in a predetermined frequency band among transmission signals input from the transmission terminal 65 and amplified by the power amplifier 64, and outputs the signal from the antenna terminal 61 to the outside. To do.

  As described above, by providing the communication module with the duplexer having the structure of the electronic component according to the present embodiment, a communication module with improved isolation characteristics can be realized.

  The configuration of the communication module shown in FIG. 11 is an example, and the same effect can be obtained even when the electronic component of the present invention is mounted on a communication module of another form.

[4. Configuration of communication device]
FIG. 12 shows an RF block of a mobile phone terminal as an example of a duplexer having the structure of the electronic component according to the present embodiment or a communication device including the above-described communication module. The configuration shown in FIG. 12 shows the configuration of a mobile phone terminal that supports the GSM (Global System for Mobile Communications) communication system and the W-CDMA (Wideband Code Division Multiple Access) communication system. Further, the GSM communication system in the present embodiment corresponds to the 850 MHz band, 950 MHz band, 1.8 GHz band, and 1.9 GHz band. In addition to the configuration shown in FIG. 12, the mobile phone terminal includes a microphone, a speaker, a liquid crystal display, and the like, but the illustration is omitted because they are not necessary in the description of the present embodiment. Here, the duplexer 73 can be realized by a duplexer having the structure of the electronic component according to the present embodiment.

  First, the received signal input via the antenna 71 selects an LSI to be operated by the antenna switch circuit 72 depending on whether the communication method is W-CDMA or GSM. When the input received signal is compatible with the W-CDMA communication system, switching is performed so that the received signal is output to the duplexer 73. The reception signal input to the duplexer 73 is limited to a predetermined frequency band by the reception filter 73 a, and a balanced reception signal is output to the LNA 74. The LNA 74 amplifies the input received signal and outputs it to the LSI 76. The LSI 76 performs a demodulation process on the audio signal based on the input received signal, and controls the operation of each unit in the mobile phone terminal.

  On the other hand, when transmitting a signal, the LSI 76 generates a transmission signal. The generated transmission signal is amplified by the power amplifier 75 and input to the transmission filter 73b. The transmission filter 73b passes only a signal in a predetermined frequency band among input transmission signals. The transmission signal output from the transmission filter 73 b is output from the antenna 71 to the outside via the antenna switch circuit 72.

  In addition, when the received signal to be input is a signal corresponding to the GSM communication system, the antenna switch circuit 72 selects any one of the reception filters 77 to 80 according to the frequency band and outputs the received signal. To do. A reception signal whose band is limited by any one of the reception filters 77 to 80 is input to the LSI 83. The LSI 83 performs a demodulation process on the audio signal based on the input received signal, and controls the operation of each unit in the mobile phone terminal. On the other hand, when transmitting a signal, the LSI 83 generates a transmission signal. The generated transmission signal is amplified by the power amplifier 81 or 82 and output from the antenna 71 to the outside via the antenna switch circuit 72.

  By providing the communication device with a duplexer having the structure of the electronic component according to the present embodiment, or a communication module including such a duplexer, a communication device with improved isolation characteristics can be realized.

[5. Effects of the embodiment, etc.]
According to the electronic component according to the present embodiment, the wall portion is formed between the transmission filter and the reception filter, so that leakage of electromagnetic waves from the transmission filter side to the reception filter side can be reduced. The characteristics can be improved.

  Further, according to the electronic component according to the present embodiment, the isolation characteristics can be improved without changing the wiring layout of the package substrate. Generally, in order to improve the isolation characteristics between the transmission filter and the reception filter, a ground pattern may be formed between the transmission filter chip and the reception filter chip. However, a ceramic substrate used as a package substrate has a wiring pattern pre-fired, so the layout of the wiring pattern cannot be easily changed, and a ground pattern is newly provided between the transmission filter chip and the reception filter chip. Difficult to add to. Therefore, as in the present embodiment, a wall portion is disposed between the transmission filter chip and the reception filter chip, and the wall portion is disposed away from the package substrate, whereby a ground pattern is newly provided on the package substrate. There is no need to add. Therefore, the isolation characteristic can be improved without changing the wiring layout of the package substrate.

  The electronic component of the present invention is useful for an electronic component such as a surface acoustic wave device that can be used in filter elements and oscillators of various electronic devices. Moreover, it is useful for the manufacturing method of such an electronic component.

DESCRIPTION OF SYMBOLS 1 Package substrate 2 Reception filter chip 3 Transmission filter chip 4 Matching circuit chip 5 Cover body 6 Wall part

Claims (7)

A substrate,
A plurality of device chips mounted on the substrate;
An electronic component that is disposed so as to cover at least an upper part of the device chip and includes a conductive lid.
Wherein the plurality of in contact with each device chip is provided between the front Kide vice chip, the wall portion having conductivity, further comprising,
The wall part is an electronic component that is coupled to the lid and is spaced apart from the substrate.   The electronic component according to claim 1, wherein the wall portion is integrally formed with the lid.   The communication module provided with the electronic component as described in any one of Claims 1-2.   A communication device comprising the communication module according to claim 3. Mounting a plurality of device chips on a substrate;
Mounting a bonding wire in a predetermined gap in the plurality of device chips;
Placing a metal plating film on the device chip;
A method of manufacturing an electronic component, comprising: heat-melting and pressurizing solder of the metal plating film, and bringing the metal dissolved from the metal plating film into close contact with the bonding wire. Mounting a plurality of device chips on a substrate;
Immersing a part of the device chip in a liquid capable of imparting wettability and conductivity to the device chip;
A step of disposing a metal plating film in at least the region where the liquid is attached in the device chip;
Heat-melting and pressurizing the metal dissolved from the metal plating film, and closely contacting the device chip and the package substrate,
In the dipping step, the liquid is attached to a predetermined gap in the plurality of device chips. Mounting a plurality of device chips on a package substrate; and
A step of etching the conductor substrate to form irregularities;
Bonding the package substrate and the conductor substrate,
In the step of forming irregularities on the conductor substrate,
A recess capable of accommodating the device chip;
A method of manufacturing an electronic component, wherein, when the package substrate and the conductor substrate are bonded together, a convex portion disposed in a predetermined gap in the plurality of device chips is formed.

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