CN207163567U - A kind of hydrophone integration module - Google Patents
A kind of hydrophone integration module Download PDFInfo
- Publication number
- CN207163567U CN207163567U CN201720649548.8U CN201720649548U CN207163567U CN 207163567 U CN207163567 U CN 207163567U CN 201720649548 U CN201720649548 U CN 201720649548U CN 207163567 U CN207163567 U CN 207163567U
- Authority
- CN
- China
- Prior art keywords
- hydrophone
- substrate
- integration module
- communication module
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Transducers For Ultrasonic Waves (AREA)
- Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)
Abstract
The utility model provides a kind of hydrophone integration module,Its integrated level is high,Feature-rich and its small volume,It is in light weight,Readily satisfy the requirement of small size installation environment,Including substrate,Hydrophone sensors are provided with substrate,Pressure sensor,Communication module and asic chip,Hydrophone sensors,Pressure sensor,Communication module and asic chip are individually enclosed in injection molded layers,Hydrophone sensors upper end is provided with the sound connected with environmental acoustics and enters opening,Meet the sensing opening of ft connection in pressure sensor upper end,Hydrophone sensors connect pressure sensor by wire with the electric conduction routing being arranged in substrate,Hydrophone sensors connect the electric conduction routing being arranged in substrate with pressure sensor by wire respectively,Communication module connects electric conduction routing by soldered ball respectively with asic chip,Electric conduction routing connection is arranged on the bottom land on the lower surface of substrate.
Description
Technical field
Hydrophone technical field is the utility model is related to, specially a kind of hydrophone integration module.
Background technology
Hydrophone, also known as underwater microphone, underwater pressure change can be produced acoustical signal and be converted to electric signal by it,
So as to reliably obtain underwater pressure, it is commonly used for the mapping of sound field, the detection demarcation of sonic transducer and ultrasound and sets
The research of the field of acoustics such as standby testing calibration and Performance Evaluation.It is with the continuous development of scientific technology and progressive, hydrophone
Application technology is also developing progressively ripe.
In the prior art, hydrophone is generally all single device, and function is more single, it is necessary to which the component of many outsides is matched somebody with somebody
Close and cooperate, integrated level is low, causes the complicated of whole hydrophone device, and size is difficult to do small, it is difficult to is miniaturized, seriously
It has impact on the portability and applicability used.
Utility model content
In view of the above-mentioned problems, the utility model provides a kind of hydrophone integration module, its integrated level is high, it is feature-rich and
Its small volume, it is in light weight, readily satisfy the requirement of small size installation environment.
Its technical scheme is such：A kind of hydrophone integration module, including substrate, it is characterised in that：On the substrate
Be provided with hydrophone sensors, pressure sensor, communication module and asic chip, the hydrophone sensors, pressure sensor,
Communication module and asic chip are individually enclosed in injection molded layers, and the hydrophone sensors upper end is provided with what is connected with environmental acoustics
Sound enters opening, and the sensing opening of ft connection is met in the pressure sensor upper end, and the hydrophone sensors pass through wire
The pressure sensor, the hydrophone sensors and the pressure sensing are connected with the electric conduction routing being arranged in the substrate
Device is arranged on the electric conduction routing in the substrate by wire connection respectively, and the communication module and the asic chip lead to respectively
Cross soldered ball and connect the electric conduction routing, the electric conduction routing connection is arranged on the bottom land on the lower surface of the substrate.
Further, the hydrophone sensors include first sensor wafer, the upper table of the first sensor wafer
Face forms columnar projections, the upper surface of the first sensor wafer and the lower surface vacuum of second sensor wafer by etching
Cavity is bonded together to form, it is respectively upper metal conducting layer, piezoelectricity from top to bottom to be formed on the upper surface of the second sensor wafer
The composite bed of material layer, lower metal conducting layer, the composite bed edge parcel in the passivation layer, the upper metal conducting layer and
The lower metal conducting layer stretches out to form extension and lower extension respectively, the upper extension and the lower extension
On be respectively equipped with pad, the lower surface of the first sensor wafer engages with the upper surface of substrate, the hydrophone sensors
Connect the electric conduction routing respectively by pad.
Further, the upper metal conducting layer and the lower metal conducting layer are respectively Mo layers.
Further, the piezoelectric material layer is AlN layers.
Further, the communication module is any one in bluetooth, wifi, mobile communication module.
Further, it is additionally provided with controller module on the substrate.
Further, it is additionally provided with power module on the substrate.
The hydrophone integration module of hydrophone of the present utility model is integrated with hydrophone sensors, pressure sensor, communication
Module and asic chip, current depth can be reacted by pressure sensor, can with reference to hydrophone sensors and asic chip
To detect the underwater signal of certain depth, the acoustical signal detected is changed into electric signal, transferred out by communication module,
Realize wireless data transmission；In addition, as needed, the hydrophone integration module of hydrophone of the present utility model can also integrate control
Device and power module processed, further enrich function；Hydrophone of the present utility model by the advantage of semiconductor fabrication, listen by water
Device sensor, pressure sensor, communication module and asic chip are integrated on a plate base, and the volume of hydrophone can be subtracted
It is small, while performance is enhanced, while its packaging technology difficulty is low, can reduce the complexity of PCB, good reliability.
Brief description of the drawings
Fig. 1 is the structural representation of hydrophone integration module of the present utility model；
Fig. 2 is the step a of the manufacturing process of hydrophone integration module of the present utility model to step d schematic diagrames；
Fig. 3 is the step e of the manufacturing process of hydrophone integration module of the present utility model to step h schematic diagrames.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
See Fig. 1, Fig. 2, Fig. 3, a kind of hydrophone integration module of the present utility model, including substrate 1, be provided with substrate 1
Hydrophone sensors 2, pressure sensor 3, communication module 4 and asic chip 5, communication module is bluetooth in the utility model example,
Hydrophone sensors 2, pressure sensor 3, communication module 4 and asic chip 5 are individually enclosed in injection molded layers 6, hydrophone sensing
The upper end of device 2 is provided with the sound connected with environmental acoustics and enters opening 7, and the sensing opening of ft connection is met in the upper end of pressure sensor 3
8, hydrophone sensors 2 connect pressure sensor 3, hydrophone sensing by wire 9 and the electric conduction routing 10 being arranged in substrate 1
Device 2 and pressure sensor 3 connect the electric conduction routing 10 being arranged in substrate 1, communication module 4 and ASIC cores by wire 9 respectively
Piece 5 connects electric conduction routing 10 by soldered ball 11 respectively, and electric conduction routing 10 connects the bottom land being arranged on the lower surface of substrate 1
12；
Hydrophone sensors 2 include first sensor wafer 21, and the upper surface of first sensor wafer 21 is by etching shape
Into columnar projections 22, the upper surface of first sensor wafer 21 forms sky with the lower surface vacuum bonding of second sensor wafer 23
Chamber 24, formed on the upper surface of second sensor wafer 24 be respectively from top to bottom upper metal conducting layer 25, piezoelectric material layer 26,
The composite bed of lower metal conducting layer 27, upper metal conducting layer 25 and lower metal conducting layer 27 respectively Mo layers, piezoelectric material layer 26
For AlN layers, the edge of composite bed is wrapped in passivation layer 28, and upper metal conducting layer 25 and lower metal conducting layer 27 are respectively to extension
Stretch to form extension 29 and lower extension 210, pad 211 is respectively equipped with upper extension 29 and lower extension 210, first passes
The lower surface of sensor wafer 21 engages with the upper surface of substrate 1, and hydrophone sensors 2 connect conduction by pad 211 and walked respectively
Line 10, the top of second sensor wafer carry out reduction processing.
See Fig. 2, Fig. 3, the manufacturing process of hydrophone integration module of the present utility model, comprise the following steps：
Step a：First sensor wafer is provided, first sensor wafer is performed etching to form columnar projections；
Step b：The upper surface of the first sensor wafer obtained in step 1 and the lower surface of second sensor wafer is true
Sky bonds together to form cavity；
Step c：Reduction processing is carried out to the top of second sensor wafer,
Step d：The upper surface of second sensor wafer is led by SOI technology formed with respectively upper metal from top to bottom
Electric layer, piezoelectric material layer, the composite bed of lower metal conducting layer, by the edge parcel passivation layer of composite bed；
Step e：Pad is set on the upper surface of the upper extension of upper metal conducting layer, in the downward of lower metal conducting layer
Pad is set on the upper surface of extending portion, obtains hydrophone sensors；
Step f：Communication module chip and asic chip are mounted on substrate；
Step g：The obtained hydrophone sensors of pressure sensor and step d are fitted on substrate；
Step h：Plastic packaging is carried out to substrate, hydrophone sensors upper end exposes the sound connected with environmental acoustics and enters opening,
Expose the sensing opening having with ft connection in pressure sensor upper end.
The hydrophone integration module of hydrophone of the present utility model is integrated with hydrophone sensors, pressure sensor, communication
Module and asic chip, current depth can be reacted by pressure sensor, can with reference to hydrophone sensors and asic chip
To detect the underwater signal of certain depth, the acoustical signal detected is changed into electric signal, transferred out by communication module,
As needed, the hydrophone integration module of hydrophone of the present utility model can be with integrated manipulator and power module, further
Abundant function；Hydrophone of the present utility model by semiconductor fabrication advantage, hydrophone sensors, pressure sensor,
Communication module and asic chip are integrated on a plate base, and the volume of hydrophone be may be reduced, while performance is enhanced,
Its packaging technology difficulty is low simultaneously, can reduce the complexity of PCB, good reliability.
For hydrophone sensors using AlN as piezoelectric material layer, ALN has the advantages that broad-band gap, the high velocity of sound can improve water and listen
The sensitivity of device, cavity is formd by the vacuum bonding of ASIC wafer and Silicon Wafer, air metallic reflection interface is formed, by sound
Ripple is limited in piezoelectric, is reduced leakage of the acoustic energy to substrate, is lifted the sensitivity of hydrophone, have big bandwidth, Larger Dynamic
The advantages that scope and the more preferable linearity, farther distance, more weak acoustic signal can be detected, for seafari, navigation channel monitors,
The extensive civil area such as pipe network monitoring, underwater navigation is significant；Meanwhile columnar projections are set in cavity, can be with
It is spacing to hydrophone sensors progress, the bottom surface adhesion of hydrophone sensors and cavity can be prevented, hydrophone sensors can not
Reset causes hydrophone to damage.
More than, the only preferable embodiment of the utility model, but the scope of protection of the utility model is not limited to
In this, any people for being familiar with the technology is in the technical scope disclosed by the utility model, the change or replacement that can readily occur in,
It should all cover within the scope of protection of the utility model.Therefore, the scope of protection of the utility model should be with claim
Protection domain is defined.
Claims (8)
1. a kind of hydrophone integration module, including substrate, it is characterised in that：Hydrophone sensors, pressure are provided with the substrate
Force snesor, communication module and asic chip, the hydrophone sensors, pressure sensor, communication module and asic chip point
It is not encapsulated in injection molded layers, the hydrophone sensors upper end is provided with the sound connected with environmental acoustics and enters opening, the pressure
The sensing opening of ft connection is met in sensor upper end, and the hydrophone sensors are by wire and are arranged in the substrate
Electric conduction routing connects the pressure sensor, and the hydrophone sensors are connected by wire and set respectively with the pressure sensor
The electric conduction routing in the substrate is put, the communication module connects the conduction by soldered ball respectively with the asic chip and walked
Line, the electric conduction routing connection are arranged on the bottom land on the lower surface of the substrate.
A kind of 2. hydrophone integration module according to claim 1, it is characterised in that：The hydrophone sensors include the
One sensor wafer, the upper surface of the first sensor wafer form columnar projections by etching, and the first sensor is brilliant
Round upper surface and the lower surface vacuum bonding of second sensor wafer form cavity, the upper surface of the second sensor wafer
It is upper to form respectively upper metal conducting layer, piezoelectric material layer, the composite bed of lower metal conducting layer from top to bottom, the composite bed
Edge wraps up in the passivation layer, and the upper metal conducting layer and the lower metal conducting layer stretch out to form extension respectively
And lower extension, pad, the following table of the first sensor wafer are respectively equipped with the upper extension and the lower extension
Face engages with the upper surface of substrate, and the hydrophone sensors connect the electric conduction routing by pad respectively.
A kind of 3. hydrophone integration module according to claim 2, it is characterised in that：The upper metal conducting layer and described
Lower metal conducting layer is respectively Mo layers.
A kind of 4. hydrophone integration module according to claim 2, it is characterised in that：The piezoelectric material layer is AlN layers.
A kind of 5. hydrophone integration module according to claim 1, it is characterised in that：The communication module be bluetooth,
Any one in wifi, mobile communication module.
A kind of 6. hydrophone integration module according to claim 1, it is characterised in that：Controller is additionally provided with the substrate
Module.
A kind of 7. hydrophone integration module according to claim 1, it is characterised in that：Power supply mould is additionally provided with the substrate
Block.
A kind of 8. hydrophone integration module according to claim 2, it is characterised in that：The second sensor wafer it is upper
Portion carries out reduction processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720649548.8U CN207163567U (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720649548.8U CN207163567U (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207163567U true CN207163567U (en) | 2018-03-30 |
Family
ID=61710422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720649548.8U Active CN207163567U (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207163567U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107271029A (en) * | 2017-06-06 | 2017-10-20 | 纽威仕微电子（无锡）有限公司 | A kind of hydrophone integration module and its manufacturing process |
| CN109253835A (en) * | 2018-08-31 | 2019-01-22 | 中国船舶重工集团公司第七〇五研究所 | A kind of linear array environmental pressure device for accurately measuring and method |
-
2017
- 2017-06-06 CN CN201720649548.8U patent/CN207163567U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107271029A (en) * | 2017-06-06 | 2017-10-20 | 纽威仕微电子（无锡）有限公司 | A kind of hydrophone integration module and its manufacturing process |
| CN109253835A (en) * | 2018-08-31 | 2019-01-22 | 中国船舶重工集团公司第七〇五研究所 | A kind of linear array environmental pressure device for accurately measuring and method |
| CN109253835B (en) * | 2018-08-31 | 2020-09-04 | 杭州瑞声海洋仪器有限公司 | Accurate environment pressure measuring device and method for linear array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10329143B2 (en) | Package with chambers for dies and manufacturing process thereof | |
| CN205280205U (en) | Micro electronmechanical vibration sensor and electronic equipment | |
| US8983105B2 (en) | Microphone | |
| US20140015071A1 (en) | Encapsulated micro-electro-mechanical device, in particular a mems acoustic transducer | |
| US7763972B2 (en) | Stacked package structure for reducing package volume of an acoustic micro-sensor | |
| CN107438213B (en) | Hydrophone and manufacturing process thereof | |
| CN103245409A (en) | Piezoelectric-effect-based vector hydroacoustic sensor with MEMS biomimetic structure | |
| CN103641060A (en) | Semiconductor integrated device assembly and related manufacturing process | |
| CN101426164B (en) | Electroacoustic sensing apparatus | |
| CN207163567U (en) | A kind of hydrophone integration module | |
| CN112887884A (en) | Vibration sensor packaging structure | |
| CN106132869A (en) | There is the MEMS motor of insulated substrate | |
| CN107271029A (en) | A kind of hydrophone integration module and its manufacturing process | |
| TW201624643A (en) | MEMS transducer package | |
| CN210579221U (en) | Silicon microphone | |
| CN206865720U (en) | A kind of hydrophone | |
| CN110475193A (en) | It is a kind of to be singly directed toward MEMS microphone and its production method | |
| CN107396239A (en) | A kind of hydrophone and its packaging technology | |
| CN206865721U (en) | A kind of hydrophone | |
| CN103609141B (en) | Micro electronmechanical toning equipment and the method for manufacturing the device | |
| CN207760033U (en) | The fan-out package structure of MEMS hydrophone chips | |
| US10057688B2 (en) | Lead frame-based chip carrier used in the fabrication of MEMS transducer packages | |
| CN205506203U (en) | High pressure resistant spherical hydrophone | |
| CN112697262B (en) | Hydrophone and method for manufacturing same | |
| CN215855106U (en) | Pressure sensor packaging module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |