CN107438213A - A kind of hydrophone and its manufacturing process - Google Patents
A kind of hydrophone and its manufacturing process Download PDFInfo
- Publication number
- CN107438213A CN107438213A CN201710420511.2A CN201710420511A CN107438213A CN 107438213 A CN107438213 A CN 107438213A CN 201710420511 A CN201710420511 A CN 201710420511A CN 107438213 A CN107438213 A CN 107438213A
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- metal conducting
- silicon
- tsv
- hydrophone
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/44—Special adaptations for subaqueous use, e.g. for hydrophone
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Acoustics & Sound (AREA)
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- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention provides a kind of hydrophone,Its small volume,It is easily formed large scale array,High sensitivity,The linearity is good,Noise resolution rate with superelevation,Including ASIC wafer and sensor wafer,ASIC wafer includes ASIC circuit layer and layer-of-substrate silicon,Columnar projections are formed in layer-of-substrate silicon,Sensor wafer includes silicon supporting layer,Layer-of-substrate silicon forms cavity with the lower surface vacuum bonding of silicon supporting layer upward,Be formed as upper metal conducting layer on the upper surface of silicon supporting layer,Piezoelectric material layer,The composite bed of lower metal conducting layer,Upper metal conducting layer and lower metal conducting layer stretch out to form extension and lower extension respectively,Composite bed parcel is in the passivation layer and upper metal conducting layer upper end is provided with the sound connected with environmental acoustics and enters opening,Also include TSV through hole,The upper extension of TSV through hole upper end connection and lower extension,The lower end connection soldered ball of TSV through hole,In addition,Present invention also offers a kind of manufacturing process of hydrophone.
Description
Technical field
The present invention relates to hydrophone technical field, specially a kind of hydrophone and its manufacturing process.
Background technology
Hydrophone, also known as underwater microphone, underwater pressure change can be produced acoustical signal and be converted to telecommunications by it
Number, so as to reliably obtain underwater pressure, it is commonly used for the mapping of sound field, the detection demarcation of sonic transducer and ultrasound
The research of the field of acoustics such as the testing calibration and Performance Evaluation of equipment.It is with the continuous development of scientific technology and progressive, hydrophone
Application technology be also developing progressively ripe.
In the prior art, hydrophone is mostly hydrophone made of piezoceramic material or composite.But current piezoelectricity
Hydrophone made by ceramic material is due to its structure, because the acoustic impedance of the vertical and horizontal of piezoceramic material is far above water
Medium, this allows for most of sound field energy in water and reflected in the interface of water and ceramic contact, and then causes hydrophone
Overall performance is poor, and its sensitivity is relatively low.At the same time, in the prior art, the hydrophone made by composite, although can
So that by setting sufficiently large capacitance, to reach higher sensitivity, but big capacitance causes the size of hydrophone very big,
It is difficult to be miniaturized, has had a strong impact on the portability and applicability used.Lacking in the prior art has higher sensitivity minitype
Hydrophone.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of hydrophone, its small volume, large scale array is easily formed, spirit
Sensitivity is high, and the linearity is good, has the noise resolution rate of superelevation, in addition, present invention also offers a kind of manufacturing process of hydrophone.
Its technical scheme is such：A kind of hydrophone, it is characterised in that：Including ASIC wafer and sensor wafer, institute
Stating ASIC wafer includes ASIC circuit layer and layer-of-substrate silicon, and the layer-of-substrate silicon is provided with groove, passes through quarter in the groove
Erosion forms columnar projections, and sensor wafer includes silicon supporting layer, the layer-of-substrate silicon lower surface vacuum with silicon supporting layer upward
Bond together to form cavity, formed on the upper surface of the silicon supporting layer be respectively from top to bottom upper metal conducting layer, piezoelectric material layer,
The composite bed of lower metal conducting layer, the upper metal conducting layer and the lower metal conducting layer stretch out to form extension respectively
Portion and lower extension, the composite bed parcel is in the passivation layer and the upper metal conducting layer upper end is provided with and connected with environmental acoustics
Sound enter opening, its also include be respectively perpendicular through the silicon supporting layer and the ASIC wafer setting TSV through hole, it is described
The upper end of TSV through hole connects the upper extension and the lower extension respectively, and the lower end connection of the TSV through hole is grown in institute
State the soldered ball under ASIC circuit layer.
Further, the upper metal conducting layer and the lower metal conducting layer are respectively Mo layers.
Further, the piezoelectric material layer Wei not AlN layers.
Further, conducting metal is filled with the TSV through hole.
A kind of manufacturing process of hydrophone, it is characterised in that：Comprise the following steps：
Step 1：ASIC wafer is provided, the layer-of-substrate silicon of ASIC wafer is thinned, then performs etching to form groove and post
Shape is raised；
Step 2：Lower surface vacuum bonding of the silicon substrate of the ASIC wafer obtained in step 1 upward with silicon supporting layer is formed into sky
Chamber；
Step 3：In the upper surface of silicon supporting layer by SOI technology formed with metal conducting layer, piezoelectricity on being respectively from top to bottom
The composite bed of material layer, lower metal conducting layer, on composite bed wrap up passivation layer in and upper metal conducting layer upper end be provided with
The sound of environmental acoustics connection enters opening；
Step 4：The lower extension of the upper extension and lower metal conducting layer that correspond to upper metal conducting layer respectively, which is formed, runs through ASIC
The TSV through hole of wafer and sensor wafer, the upper end of TSV through hole connect extension and lower extension respectively；
Step 6：In the lower end of the positive lower end of ASIC wafer growth soldered ball connection TSV through hole.
Further, between step 2 and step 3, reduction processing is carried out to the upper end of silicon supporting layer.
Further, any one of the material of the soldered ball using tin, indium, in tin-lead, tin-silver-copper solder.
Further, the TSV through hole is formed using dry method deep silicon etching technique.
Further, the vacuum bonding of ASIC wafer and silicon supporting layer uses Si-Glass bonding technologies, and Si-Si bond closes work
Skill.
For the hydrophone wafer of the hydrophone of the present invention using AlN as piezoelectric material layer, ALN has broad-band gap, the high velocity of sound etc. excellent
Point can improve the sensitivity of hydrophone, and ASIC wafer sets ASIC circuit and layer-of-substrate silicon, passes through the silicon substrate of ASIC wafer
The vacuum bonding of layer and silicon supporting layer forms cavity, forms air metallic reflection interface, sound wave is limited in piezoelectric,
Reduce leakage of the acoustic energy to substrate, lift the sensitivity of hydrophone, have the linearity it is good, have superelevation noise resolution rate it is excellent
Point, farther distance, more weak acoustic signal can be detected, it is big for seafari, navigation channel monitoring, pipe network monitoring, underwater navigation etc.
Scale civil area is significant；ASIC circuit and hydrophone sensors share layer-of-substrate silicon, reduce hydrophone
Volume, hydrophone of the invention is by the advantage of semiconductor fabrication, and size is small, and single-chip integration hydrophone wafer and ASIC are brilliant
Circle, reduce volume by using TSV through hole so that hydrophone volume is smaller, is easily formed large scale array, has preferably electricity
Gas switching performance, meanwhile, columnar projections are set in cavity, can be spacing to sensor wafer progress, sensor can be prevented
The bottom surface adhesion of wafer and cavity, sensor wafer, which can not reset, causes hydrophone to damage.
Brief description of the drawings
Fig. 1 is the structural representation of the hydrophone of the present invention；
Fig. 2 is the step a to step c of the manufacturing process of the hydrophone of present invention schematic flow sheet；
Fig. 3 is the step d to step f of the manufacturing process of the hydrophone of present invention schematic flow sheet.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
See Fig. 1, Fig. 2, Fig. 3, a kind of hydrophone of the invention, including ASIC wafer 1 and sensor wafer 2, ASIC wafer 1
Including ASIC circuit layer 3 and layer-of-substrate silicon 4, layer-of-substrate silicon 4 is provided with groove 5, and columnar projections are formed by etching in groove 5
6, the circle of sensor crystalline substance 2 includes silicon supporting layer 7, and layer-of-substrate silicon 4 forms cavity with the lower surface vacuum bonding of silicon supporting layer 7 upward
17, it is respectively upper metal conducting layer 8, piezoelectric material layer 9, lower metallic conduction from top to bottom to be formed on the upper surface of silicon supporting layer 7
The composite bed of layer 10, upper metal conducting layer 8 and lower metal conducting layer 10 are respectively Mo layers, piezoelectric material layer 9 not Wei AlN layers, on
Metal conducting layer 8 and lower metal conducting layer 10 stretch out to form extension 11 and lower extension 12 respectively, composite bed parcel
In passivation layer 13 and the upper end of upper metal conducting layer 8 is provided with the sound connected with environmental acoustics and enters opening 14, and it also includes difference
The TSV through hole 15 of silicon supporting layer 7 and the setting of ASIC wafer 1 is passed perpendicularly through, the upper end of TSV through hole 15 connects extension 11 respectively
With lower extension 12, the lower end connection of TSV through hole 15 is grown in the soldered ball 16 under ASIC circuit layer 3, is filled with and leads in TSV through hole
Electric metal.
See Fig. 2, Fig. 3, a kind of manufacturing process of hydrophone of the invention, comprise the following steps：
Step a：ASIC wafer is provided, the layer-of-substrate silicon of ASIC wafer is thinned, then performs etching to form groove and post
Shape is raised；
Step b：Lower surface vacuum bonding of the silicon substrate of the ASIC wafer obtained in step a upward with silicon supporting layer is formed into sky
The vacuum bonding of chamber, ASIC wafer and silicon supporting layer uses Si-Glass bonding technologies, and Si-Si bond closes technique；
Step c：Reduction processing is carried out to the upper end of silicon supporting layer；
Step d：In the upper surface of silicon supporting layer by SOI technology formed with being respectively Mo layers, AlN layers, Mo layers from top to bottom
Composite bed, Mo layers use depositing operation using sputtering, evaporation technology, AlN layers, are wrapped up on composite bed in passivation layer and in upper gold
Category conductive layer upper end is provided with the sound connected with environmental acoustics and enters opening；
Step e：The lower extension of the upper extension and lower metal conducting layer that correspond to upper metal conducting layer respectively, which is formed, runs through ASIC
The TSV through hole of wafer and sensor wafer, the upper end of TSV through hole connect extension and lower extension respectively, and TSV through hole uses
Dry method deep silicon etching technique is formed；
Step f：In the lower end of the positive lower end of ASIC wafer growth soldered ball connection TSV through hole.
For the hydrophone wafer of the hydrophone of the present invention using AlN as piezoelectric material layer, ALN has broad-band gap, the high velocity of sound etc. excellent
Point can improve the sensitivity of hydrophone, and ASIC wafer sets ASIC circuit and layer-of-substrate silicon, passes through the silicon substrate of ASIC wafer
The vacuum bonding of layer and silicon supporting layer forms cavity, forms air metallic reflection interface, sound wave is limited in piezoelectric,
Reduce leakage of the acoustic energy to substrate, lift the sensitivity of hydrophone, have the linearity it is good, have superelevation noise resolution rate it is excellent
Point, farther distance, more weak acoustic signal can be detected, it is big for seafari, navigation channel monitoring, pipe network monitoring, underwater navigation etc.
Scale civil area is significant；ASIC circuit and hydrophone sensors share layer-of-substrate silicon, reduce hydrophone
Volume, hydrophone of the invention is by the advantage of semiconductor fabrication, and size is small, and single-chip integration hydrophone wafer and ASIC are brilliant
Circle, reduce volume by using TSV through hole so that hydrophone volume is smaller, is easily formed large scale array, has preferably electricity
Gas switching performance, meanwhile, columnar projections are set in cavity, can be spacing to sensor wafer progress, sensor can be prevented
The bottom surface adhesion of wafer and cavity, sensor wafer, which can not reset, causes hydrophone to damage.
More than, it is only the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and it is any
Be familiar with the people of the technology disclosed herein technical scope in, the change or replacement that can readily occur in should all be covered at this
Within the protection domain of invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (9)
- A kind of 1. hydrophone, it is characterised in that：Including ASIC wafer and sensor wafer, the ASIC wafer includes ASIC circuit Layer and layer-of-substrate silicon, the layer-of-substrate silicon are provided with groove, and columnar projections are formed by etching in the groove, and sensor is brilliant Circle includes silicon supporting layer, and the layer-of-substrate silicon forms cavity, the silicon support with the lower surface vacuum bonding of silicon supporting layer upward Respectively upper metal conducting layer, piezoelectric material layer, the composite bed of lower metal conducting layer from top to bottom, institute are formed on the upper surface of layer State metal conducting layer and the lower metal conducting layer stretches out to form extension and lower extension respectively, the composite bed Parcel is in the passivation layer and the upper metal conducting layer upper end is provided with the sound connected with environmental acoustics and enters opening, and it also includes dividing The TSV through hole of the silicon supporting layer and ASIC wafer setting is not passed perpendicularly through, and the upper end of the TSV through hole connects institute respectively Extension and the lower extension are stated, the lower end connection of the TSV through hole is grown in the weldering under the front of the ASIC wafer Ball.
- A kind of 2. hydrophone according to claim 1, it is characterised in that：The upper metal conducting layer and the lower metal are led Electric layer is respectively Mo layers.
- A kind of 3. hydrophone according to claim 1, it is characterised in that：The piezoelectric material layer Wei not AlN layers.
- A kind of 4. hydrophone according to claim 1, it is characterised in that：Conducting metal is filled with the TSV through hole.
- A kind of 5. manufacturing process of hydrophone, it is characterised in that：Comprise the following steps：Step 1：ASIC wafer is provided, the layer-of-substrate silicon of ASIC wafer is thinned, then performs etching to form groove and post Shape is raised；Step 2：Lower surface vacuum bonding of the silicon substrate of the ASIC wafer obtained in step 1 upward with silicon supporting layer is formed into sky Chamber；Step 3：In the upper surface of silicon supporting layer by SOI technology formed with metal conducting layer, piezoelectricity on being respectively from top to bottom The composite bed of material layer, lower metal conducting layer, on composite bed wrap up passivation layer in and upper metal conducting layer upper end be provided with The sound of environmental acoustics connection enters opening；Step 4：The lower extension of the upper extension and lower metal conducting layer that correspond to upper metal conducting layer respectively, which is formed, runs through ASIC The TSV through hole of wafer and sensor wafer, the upper end of TSV through hole connect extension and lower extension respectively；Step 6：In the lower end of the positive lower end of ASIC wafer growth soldered ball connection TSV through hole.
- A kind of 6. manufacturing process of hydrophone according to claim 5, it is characterised in that：Between step 2 and step 3, Reduction processing is carried out to the upper end of silicon supporting layer.
- A kind of 7. manufacturing process of hydrophone according to claim 5, it is characterised in that：The material of the soldered ball uses Tin, indium, any one in tin-lead, tin-silver-copper solder.
- A kind of 8. manufacturing process of hydrophone according to claim 5, it is characterised in that：The TSV through hole uses dry method Deep silicon etching technique is formed.
- A kind of 9. manufacturing process of hydrophone according to claim 5, it is characterised in that：ASIC wafer and silicon supporting layer Vacuum bonding uses Si-Glass bonding technologies, and Si-Si bond closes technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420511.2A CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420511.2A CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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| Publication Number | Publication Date |
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| CN107438213A true CN107438213A (en) | 2017-12-05 |
| CN107438213B CN107438213B (en) | 2023-08-15 |
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| CN201710420511.2A Active CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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Cited By (5)
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| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN111599914A (en) * | 2020-05-25 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | Preparation method of MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN111609915A (en) * | 2020-05-25 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN111811638A (en) * | 2019-04-12 | 2020-10-23 | 广州辰方互联信息科技有限公司 | Piezoelectric type induction unit and hydrophone applying same |
| CN115265854A (en) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | Pressure sensor and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
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| CN115265854A (en) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | Pressure sensor and preparation method thereof |
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| CN107438213B (en) | 2023-08-15 |
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