CN104980117A - Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof - Google Patents
Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof Download PDFInfo
- Publication number
- CN104980117A CN104980117A CN201510328918.3A CN201510328918A CN104980117A CN 104980117 A CN104980117 A CN 104980117A CN 201510328918 A CN201510328918 A CN 201510328918A CN 104980117 A CN104980117 A CN 104980117A
- Authority
- CN
- China
- Prior art keywords
- flexible
- acoustic wave
- surface acoustic
- interdigital electrode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to the field of surface acoustic wave device manufacturing, and specifically relates to a structure of a flexible surface acoustic wave device resistant to high temperature and a manufacturing method thereof. The structure sequentially comprises, from bottom to top, a bottom protective layer, a flexible alloy substrate, a buffer layer, a piezoelectric film, an interdigital electrode, and a top protective layer. The flexible alloy substrate is made of high-temperature flexible alloy strips. The buffer layer and the bottom protective layer are amorphous oxide films. The piezoelectric film is an aluminum nitride film. The interdigital electrode is made of gold. The top protective layer is an aluminum nitride film. The method comprises the steps of preprocessing the flexible alloy substrate, preparing the amorphous oxide films by a chemical solution dip-coating method, preparing the piezoelectric film and the interdigital electrode, and finally, preparing the top protective layer. The flexible surface acoustic wave device has the advantages of being resistant to high temperature, good in flexible characteristic, light, capable of working in a complex curved surface environment, and low in cost.
Description
Technical field:
The present invention relates to SAW (Surface Acoustic Wave) device and manufacture field, be specifically related to a kind of can the structure of high-temperature-resistant flexible SAW (Surface Acoustic Wave) device and manufacture method thereof.
Background technology:
Surface acoustic wave (Surface acoustic wave) is a kind of elastic wave propagated along the surface of solids.1855, found in the research of seismic wave by English physicist Rayleigh (Rayleigh).This elastic wave is propagated along semi infinite solid surface, and its energy mainly concentrates on elastomeric surface, and its amplitude is along with importing the increase of the degree of depth of backing material and exponential damping into, and this ripple is exactly surface acoustic wave, is also R wave.
SAW (Surface Acoustic Wave) device utilizes surface acoustic wave to complete a class new device of various sophisticated signal process, and it has obtained and has applied widely in hyundai electronics information technology.First SAW (Surface Acoustic Wave) device succeeds in developing in nineteen sixty-five, and in decades afterwards, SAW (Surface Acoustic Wave) device is flourish, and some professional domains become can not shortage electronic devices and components.Along with information and communication technology (ICT) high speed development, the applying frequency of SAW (Surface Acoustic Wave) device also develops into GHz from initial MHz.The working temperature of device is also in continuous lifting.And in recent years, in order to adapt to portable, extending, wearableization of electronic product, and can work in nonplanar environment, flexible electronic, with the advantage of its uniqueness and potential using value, has caused concern both domestic and external.Start the flexible SAW (Surface Acoustic Wave) device occurring working in curved surface.High frequency, high temperature and flexibility are in the current new trend having become SAW (Surface Acoustic Wave) device development.
But up to the present, the SAW (Surface Acoustic Wave) device of main flow is still mainly limited on the organic polymer substrate of single crystalline substrate or flexibility device being prepared in rigidity.Such as, the single crystalline substrate such as quartz, silicon, sapphire, lithium niobate, or the organic polymer substrate that polyester, polyethylene, polyimides, polystyrene etc. are flexible.For the SAW (Surface Acoustic Wave) device be prepared in rigidity single crystalline substrate, although its technology maturation, device performance are stable, its quality is large and under nonplanar environment can not be operated in, can not fold, bending.And for the SAW (Surface Acoustic Wave) device prepared on flexible organic polymer substrate, although it has the advantages such as good flexible characteristic and lightweight, portable, but due to the restriction of its substrate (organic polymer) itself, under making it be difficult to be applied to hot environment, 200 DEG C ~ 300 DEG C time, the overwhelming majority organic polymer will deliquescing, fusing, decomposition, releasing escaping gas, this will cause great impact to SAW (Surface Acoustic Wave) device.Therefore be badly in need of that exploitation is a kind of can be applied to complex-curved and still keep the novel flexible SAW (Surface Acoustic Wave) device of superperformance in high temperature environments.
Summary of the invention:
For above-mentioned existing problems or deficiency, the invention provides a kind of high-temperature-resistant flexible SAW (Surface Acoustic Wave) device and manufacture method thereof.Make it can meet feature that is high temperature resistant and height soft flexible simultaneously, and there is higher centre frequency.
High-temperature-resistant flexible SAW (Surface Acoustic Wave) device provided by the invention is followed successively by from bottom to up: protective underlayer layer, flexible alloys substrate, resilient coating, piezoelectric membrane, interdigital electrode and protective top layer.
Described flexible alloys substrate adopts nickel base superalloy, cobalt base superalloy or iron-base superalloy, and its thickness is 10 ~ 100 μm.
Resilient coating and protective underlayer layer are identical amorphous oxide thin film, adopt yittrium oxide (Y
2o
3) or yttrium alumina (Y
2o
3-Al
2o
3), its thickness is 100nm ~ 2 μm.
Piezoelectric membrane is the aluminium nitride film of high C axle preferrel orientation, and film thickness is 1 μm ~ 10 μm.
Interdigital electrode material is gold (Au), and thickness is 100nm ~ 200nm.
Protective top layer is aluminium nitride film, and the thickness of aluminium nitride protective layer is 200nm ~ 500nm.
Its manufacture method comprises the following steps:
The preliminary treatment of step 1, flexible alloys substrate: flexible alloys band is carried out successively cut, electrochemical polish, passivation, cleaning and drying and processing.
The preparation of step 2, resilient coating and protective underlayer layer: adopt chemical solution dip-coating method simultaneously to prepare the yittrium oxide (Y of one deck 100nm ~ 2 μm in the front and rear surfaces of step 1 gained flexible alloys substrate
2o
3) or yttrium alumina (Y
2o
3-Al
2o
3) amorphous oxide thin film, one side as resilient coating, another side as protective underlayer layer.
The preparation of step 3, piezoelectric membrane: adopt Magnetron reactive sputtering in the aluminium nitride film of resilient coating one side deposition one deck C axle preferrel orientation of step 2 gained flexible alloys substrate, thickness is 1 μm ~ 10 μm.
The preparation of step 4, interdigital electrode: interdigital electrode SAW (Surface Acoustic Wave) device preparing by the piezoelectric membrane adopting microelectronics photoetching process to obtain in step 3.
The preparation of step 5, protective top layer: adopt Magnetron reactive sputtering to prepare skim aluminium nitride protective layer in the interdigital electrode that step 4 is obtained, its thickness is 200nm ~ 500nm.
The present invention adopts corrosion-resistant, high temperature resistant, anti-oxidant, that processing characteristics is good high temperature flexible alloys band as the backing material of SAW (Surface Acoustic Wave) device, and to have made it possess high temperature resistant simultaneously and the feature of height soft flexible.Compared with traditional SAW (Surface Acoustic Wave) device based on rigid substrate, its good flexible characteristic makes it can work in more complicated ENVIRONMENTS WITH CURVED SURFACES, and quality is lighter, flexible.This will at military industry field, aerospace field, particularly on peculiar part surface, blade, wing class three-dimension curved surface piece surface context of detection have very large application prospect.With current main-stream based on organic polymer substrate flexible SAW (Surface Acoustic Wave) device compared with, the backing material that the present invention adopts is resistant to elevated temperatures alloy material, this is applied to higher temperature by making the SAW (Surface Acoustic Wave) device of preparation, and its application of temperature can up to more than 600 DEG C.
The present invention adopt piezoelectric be aluminum nitride piezoelectric film, its high thermal stability (more than 700 DEG C just surface oxidation occur) this will be conducive to the high-temperature behavior of device; High acoustic surface wave propagation speed (be 12000m/s along C axle, be 6000m/s perpendicular to C axle) will be conducive to the centre frequency improving SAW (Surface Acoustic Wave) device.
Prepare amorphous oxides resilient coating in the present invention, solve the difficulty being directly difficult to deposit good aluminum nitride piezoelectric film in alloy substrate.
The present invention prepares amorphous oxides protective layer and aluminium nitride protective layer respectively on flexible alloys substrate bottom and surface acoustic wave interdigital electrode, and alloy flexible substrate and golden interdigital electrode under high temperature can be prevented like this to be oxidized.
Flexible high temperature alloy substrate materials application in the present invention is extensive, cheap, can realize continuous prodution in enormous quantities.
Beneficial effect of the present invention is in sum: device architecture can be high temperature resistant, and has good flexible characteristic, and quality is light, can work in complicated ENVIRONMENTS WITH CURVED SURFACES, with low cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the high-temperature flexible SAW (Surface Acoustic Wave) device in the present invention.
Reference numeral: 1-amorphous oxides protective underlayer layer, 2-flexible alloys substrate, 3-amorphous oxides resilient coating, 4-aluminum nitride piezoelectric film, 5-aluminium nitride protective layer, 6-interdigital electrode.
Embodiment:
Embodiment
The preliminary treatment of step 1, flexible alloys substrate: choose high-temperature nickel-based Hastelloy C alloys-276 as flexible alloys material, flexible alloys material being cut into thickness is 100 μm, and size is 20mm × 10mm.Electrochemical polishing treatment is carried out to flexible alloys substrate, makes alloy strip steel rolled stock surface finish, passivation, removal metal burr.Use the two-sided of mixed solution alloy band of alcohol and acetone to carry out ultrasonic cleaning, clean 2 times.Cleaned flexible Hastelloy substrate is put into the drying baker being filled with pure nitrogen gas and be heated to 100 DEG C of oven dry 1 hour.
The preparation of step 2, resilient coating and protective underlayer layer: adopt chemical solution dip-coating method simultaneously to prepare the yittrium oxide (Y of one deck 100nm ~ 2 μm in step 1 gained flexible alloys substrate front and rear surfaces
2o
3) or yttrium alumina (Y
2o
3-Al
2o
3) amorphous oxide thin film, design parameter sees the following form.
The preparation of step 3, aluminum nitride piezoelectric film: prepare aluminum nitride piezoelectric film by intermediate frequency (40KHz) reactive magnetron sputtering method.First flexible alloys substrate previous step having been prepared resilient coating carries out ultrasonic cleaning.Cleaned substrate is put into the vacuum cavity of sputtering system, 5 × below 10-4Pa is evacuated to cavity.Be filled with argon gas, open mid frequency sputtering power supply pre-sputter cleaning aluminium target surface 15 minutes.Adjustment target-substrate distance is 80mm, and sputtering pressure is 1.0Pa.Be filled with argon gas and nitrogen (ratio is 70/30) after pre-sputtering terminates, under the power of 2000W, start reactive sputter-deposition aluminium nitride film, sputtering sedimentation closed instrument after 2 hours simultaneously, and deposition gained aluminum nitride thin film thickness is 3 μm.
The preparation of step 4, interdigital electrode: adopt microelectronics photoetching process to prepare the interdigital electrode of SAW (Surface Acoustic Wave) device.Flexible alloys substrate step 3 having been prepared aluminum nitride piezoelectric film is ultrasonic cleaning 5 minutes successively in acetone, alcohol, deionized water, then dries up with nitrogen.On the above-mentioned flexible alloys substrate handled well, dry through overbaking sheet, gluing, front baking, aligning and exposure, reversion successively, generally to expose to the sun, the photoetching process process such as development.Adopt a kind of method in electron beam evaporation or magnetically controlled sputter method to prepare golden interdigital electrode, golden interdigital electrode prepared by electron-beam vapor deposition method, thickness is 100nm.The redundant electrodes be covered in above photoresist is peeled off, obtains the figure of final SAW (Surface Acoustic Wave) device interdigital electrode.
The preparation of step 5, protective top layer: adopt the method identical with step 3 to prepare skim aluminium nitride protective layer in the made interdigital electrode got ready of step 4, its thickness is 200nm.
Claims (4)
1. a high-temperature-resistant flexible SAW (Surface Acoustic Wave) device, is followed successively by from bottom to up: protective underlayer layer, flexible alloys substrate, resilient coating, piezoelectric membrane, interdigital electrode and protective top layer, is characterized in that:
Described interdigital electrode material is gold (Au), and thickness is 100nm ~ 200nm;
Described flexible alloys substrate adopts nickel base superalloy, cobalt base superalloy or iron-base superalloy, and thickness is 10 ~ 100 μm;
Described resilient coating and protective underlayer layer are identical amorphous oxide thin film, adopt yittrium oxide (Y
2o
3) or yttrium alumina (Y
2o
3-Al
2o
3), thickness is 100nm ~ 2 μm.
2. high-temperature-resistant flexible SAW (Surface Acoustic Wave) device as claimed in claim 1, it is characterized in that: described piezoelectric membrane is the aluminium nitride film of high C axle preferrel orientation, thickness is 1 μm ~ 10 μm.
3. high-temperature-resistant flexible SAW (Surface Acoustic Wave) device as claimed in claim 1 or 2, it is characterized in that: described protective top layer is aluminium nitride film, thickness is 200nm ~ 500nm.
4. the preparation method of high-temperature-resistant flexible SAW (Surface Acoustic Wave) device as claimed in claim 1, comprises the following steps:
The preliminary treatment of step 1, flexible alloys substrate: flexible alloys band is carried out successively cut, electrochemical polish, passivation, cleaning and drying and processing;
The preparation of step 2, resilient coating and protective underlayer layer: adopt chemical solution dip-coating method simultaneously to prepare the yittrium oxide (Y of one deck 100nm ~ 2 μm in the front and rear surfaces of step 1 gained flexible alloys substrate
2o
3) or yttrium alumina (Y
2o
3-Al
2o
3) amorphous oxide thin film, one side as resilient coating, another side as protective underlayer layer;
The preparation of step 3, piezoelectric membrane: adopt Magnetron reactive sputtering in the aluminium nitride film of resilient coating one side deposition one deck C axle preferrel orientation of step 2 gained flexible alloys substrate, thickness is 1 μm ~ 10 μm;
The preparation of step 4, interdigital electrode: interdigital electrode SAW (Surface Acoustic Wave) device preparing by the piezoelectric membrane adopting microelectronics photoetching process to obtain in step 3;
The preparation of step 5, protective top layer: adopt Magnetron reactive sputtering to prepare skim aluminium nitride protective layer in the interdigital electrode that step 4 is obtained, its thickness is 200nm ~ 500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510328918.3A CN104980117A (en) | 2015-06-15 | 2015-06-15 | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510328918.3A CN104980117A (en) | 2015-06-15 | 2015-06-15 | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104980117A true CN104980117A (en) | 2015-10-14 |
Family
ID=54276286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510328918.3A Pending CN104980117A (en) | 2015-06-15 | 2015-06-15 | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104980117A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106338347A (en) * | 2016-11-02 | 2017-01-18 | 清华大学 | Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof |
| CN107634734A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | SAW resonator, wave filter and preparation method thereof |
| CN109155357A (en) * | 2016-05-24 | 2019-01-04 | 卢森堡科学技术研究院 | Transparent piezoelectric device and its manufacturing method |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN110113021A (en) * | 2019-04-19 | 2019-08-09 | 电子科技大学 | A kind of high-temperature stability electrode and preparation method thereof |
| CN110186588A (en) * | 2019-06-12 | 2019-08-30 | 宁海县浙工大科学技术研究院 | A kind of temperature sensor and monitoring method based on flexible SAW device |
| CN110196124A (en) * | 2019-06-12 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of pressure sensor based on flexible SAW device |
| CN110261471A (en) * | 2019-06-12 | 2019-09-20 | 宁海县浙工大科学技术研究院 | A kind of humidity sensor based on flexible SAW device |
| CN111781271A (en) * | 2020-07-14 | 2020-10-16 | 电子科技大学 | Flexible surface acoustic wave gas sensor and preparation method thereof |
| CN112217492A (en) * | 2019-07-12 | 2021-01-12 | 北京梦之墨科技有限公司 | SAW filter |
| CN112366273A (en) * | 2020-11-11 | 2021-02-12 | 赣州优膜科技有限公司 | Preparation method of ZnO thin film electric exciter with linear adjustable piezoelectric property on flexible substrate |
| CN113178516A (en) * | 2021-03-31 | 2021-07-27 | 杭州电子科技大学 | High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method thereof |
| CN113178517A (en) * | 2021-03-25 | 2021-07-27 | 杭州电子科技大学 | High-temperature-resistant interdigital electrode of surface acoustic wave sensor and preparation method thereof |
| CN116208118A (en) * | 2023-03-08 | 2023-06-02 | 北京中科飞鸿科技股份有限公司 | Flexible surface acoustic wave device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7965155B2 (en) * | 2006-12-27 | 2011-06-21 | Panasonic Corporation | Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used |
| CN103014654A (en) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | Preparation method of AlN/ZnO/InGaN/diamond/Si multilayer-structure surface acoustic wave filter |
| CN104359584A (en) * | 2014-11-12 | 2015-02-18 | 中国科学院微电子研究所 | High-temperature surface acoustic wave temperature sensor |
-
2015
- 2015-06-15 CN CN201510328918.3A patent/CN104980117A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7965155B2 (en) * | 2006-12-27 | 2011-06-21 | Panasonic Corporation | Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used |
| CN103014654A (en) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | Preparation method of AlN/ZnO/InGaN/diamond/Si multilayer-structure surface acoustic wave filter |
| CN104359584A (en) * | 2014-11-12 | 2015-02-18 | 中国科学院微电子研究所 | High-temperature surface acoustic wave temperature sensor |
Non-Patent Citations (1)
| Title |
|---|
| 曾飞 等: "柔性基材表面功能薄膜的制备与应用研究进展", 《中国材料进展》 * |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109155357A (en) * | 2016-05-24 | 2019-01-04 | 卢森堡科学技术研究院 | Transparent piezoelectric device and its manufacturing method |
| CN106338347A (en) * | 2016-11-02 | 2017-01-18 | 清华大学 | Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof |
| CN107634734A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | SAW resonator, wave filter and preparation method thereof |
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN110113021A (en) * | 2019-04-19 | 2019-08-09 | 电子科技大学 | A kind of high-temperature stability electrode and preparation method thereof |
| CN110186588A (en) * | 2019-06-12 | 2019-08-30 | 宁海县浙工大科学技术研究院 | A kind of temperature sensor and monitoring method based on flexible SAW device |
| CN110196124A (en) * | 2019-06-12 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of pressure sensor based on flexible SAW device |
| CN110261471A (en) * | 2019-06-12 | 2019-09-20 | 宁海县浙工大科学技术研究院 | A kind of humidity sensor based on flexible SAW device |
| CN112217492A (en) * | 2019-07-12 | 2021-01-12 | 北京梦之墨科技有限公司 | SAW filter |
| CN111781271A (en) * | 2020-07-14 | 2020-10-16 | 电子科技大学 | Flexible surface acoustic wave gas sensor and preparation method thereof |
| CN111781271B (en) * | 2020-07-14 | 2022-03-08 | 电子科技大学 | Flexible surface acoustic wave gas sensor and preparation method thereof |
| CN112366273A (en) * | 2020-11-11 | 2021-02-12 | 赣州优膜科技有限公司 | Preparation method of ZnO thin film electric exciter with linear adjustable piezoelectric property on flexible substrate |
| CN113178517A (en) * | 2021-03-25 | 2021-07-27 | 杭州电子科技大学 | High-temperature-resistant interdigital electrode of surface acoustic wave sensor and preparation method thereof |
| CN113178516A (en) * | 2021-03-31 | 2021-07-27 | 杭州电子科技大学 | High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method thereof |
| CN116208118A (en) * | 2023-03-08 | 2023-06-02 | 北京中科飞鸿科技股份有限公司 | Flexible surface acoustic wave device and preparation method thereof |
| CN116208118B (en) * | 2023-03-08 | 2024-06-11 | 北京中科飞鸿科技股份有限公司 | Flexible surface acoustic wave device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104980117A (en) | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof | |
| JP5850137B2 (en) | Elastic wave device and manufacturing method thereof | |
| CN106244984B (en) | Enhanced AlN films of a kind of a axis orientation and preparation method thereof | |
| CN105027436A (en) | Composite substrate, elastic wave device and method for manufacturing elastic wave device | |
| CN105978520B (en) | A kind of SAW device of multilayered structure and preparation method thereof | |
| CN110113025B (en) | Temperature compensation surface acoustic wave device convenient for radio frequency front end integration and preparation method and application thereof | |
| CN104805405A (en) | Aluminium nitride piezoelectric film and preparation method thereof | |
| CN110994097B (en) | High-frequency large-bandwidth thin-film bulk wave filter structure and preparation method thereof | |
| CN111071986A (en) | Method for preparing silicon carbide multilevel microstructure with assistance of laser modification and acceleration sensor | |
| CN106160691A (en) | A kind of High Frequency SAW Device based on Si base and preparation method thereof | |
| CN106601480A (en) | High-temperature high-frequency polyimide sheet type film capacitor and manufacturing process thereof | |
| CN112448687A (en) | TC-SAW filter manufacturing method | |
| JP2009010927A (en) | Elastic boundary wave substrate and elastic boundary wave functional element using the substrate | |
| TWI769270B (en) | Surface acoustic wave device and method for manufacturing the same | |
| CN104359584A (en) | High-temperature surface acoustic wave temperature sensor | |
| CN101599749A (en) | Method for manufacturing surface acoustic wave transducer | |
| CN111883646B (en) | Preparation method of silicon-based lithium tantalate piezoelectric single crystal film substrate | |
| WO2021103579A1 (en) | Thin film material surface acoustic wave device with gs layered electrode, preparation method therefor and use thereof | |
| CN112383288A (en) | Temperature-compensated packaging-free surface acoustic wave device and preparation method thereof | |
| CN103095244A (en) | Preferred orientation AIN piezoelectric film and preparation method thereof | |
| CN116865704A (en) | Surface acoustic wave filter structure and preparation method thereof | |
| CN109217842A (en) | The SAW filter and preparation method thereof of nearly zero-temperature coefficient | |
| CN110011633A (en) | A kind of SAW filter preparation method with positive photoresist high adhesion force | |
| CN109182969A (en) | The preparation method of medium-wave infrared optics horniness protective film | |
| CN107881469A (en) | Diamond-like composite coating and preparation method thereof and purposes and coated tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151014 |
|
| RJ01 | Rejection of invention patent application after publication |