CN101599749A - Method for manufacturing surface acoustic wave transducer - Google Patents
Method for manufacturing surface acoustic wave transducer Download PDFInfo
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- CN101599749A CN101599749A CNA2009103016975A CN200910301697A CN101599749A CN 101599749 A CN101599749 A CN 101599749A CN A2009103016975 A CNA2009103016975 A CN A2009103016975A CN 200910301697 A CN200910301697 A CN 200910301697A CN 101599749 A CN101599749 A CN 101599749A
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- acoustic wave
- surface acoustic
- wave transducer
- manufacture method
- photoresist
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000003595 mist Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 238000001552 radio frequency sputter deposition Methods 0.000 claims 1
- RIUWBIIVUYSTCN-UHFFFAOYSA-N trilithium borate Chemical compound [Li+].[Li+].[Li+].[O-]B([O-])[O-] RIUWBIIVUYSTCN-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 3
- UNQHSZOIUSRWHT-UHFFFAOYSA-N aluminum molybdenum Chemical compound [Al].[Mo] UNQHSZOIUSRWHT-UHFFFAOYSA-N 0.000 abstract 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a manufacturing method of a surface acoustic wave transducer, and belongs to the field of sensor manufacturing. The method comprises the steps of firstly, sequentially depositing four layers of films of titanium, aluminum-molybdenum alloy, titanium and aluminum-molybdenum alloy on a piezoelectric substrate, then coating photoresist and exposing to form a surface acoustic wave transducer pattern, etching a non-pattern area which is not covered by the photoresist by adopting a mixed gas of chlorine and boron chloride, and finally removing the photoresist to obtain the surface acoustic wave transducer pattern. The four-layer film can inhibit aluminum atom migration, and improve the adhesive force and power bearing capacity of the film. The performance of the aluminum film is improved, and the accuracy of the reaction ion etching graph is improved, so that the performance of the transducer is improved, and the service life of the device is prolonged.
Description
Technical field
The present invention relates to a kind of manufacturing technology of surface acoustic wave sensor, particularly relate to a kind of manufacture method of surface acoustic wave transducer.
Background technology
Surface acoustic wave SAW is a kind of sound wave of propagating along elastic matrix surface, because surface acoustic wave carries out transducing and propagation at dielectric surface, so the injection of information, extraction, processing all can realize easily.Surface acoustic wave sensor was come out the seventies in last century, and it is the up-and-coming youngster of transducer.The basic principle of sonic surface wave gas sensors is the variation that causes surface acoustic wave sensor speed by the absorption that the sensitive membrane that the SAW (Surface Acoustic Wave) device surface is covered is treated side gas, thereby change the frequency of oscillation of SAW (Surface Acoustic Wave) oscillator, realize monitoring and measurement gas with this.Compare with the transducer of other types, sonic surface wave gas sensors has a lot of excellent characteristic, have that volume is little, in light weight, precision is high, resolution is high, antijamming capability is strong, characteristics such as highly sensitive, valid analysing range good linearity, can utilize the plane manufacture craft in the integrated circuit, can realize microminiaturization and integrated, be suitable for producing low-costly and in high volume.
But also there is more problem in existing surface acoustic wave sensor, as: some alloy firms that are used in sonic surface wave gas sensors at present have limitation in reactive ion etching, it is coarse etc. mainly to show as the graphical interfaces of etching difficulty, etching.Methods such as dry etching technology method are adopted in the making of high-frequency element mostly.Wherein, reactive ion etching (RIE) method is to strengthen the process of chemical reaction with the active ion with certain bombarding energy and the surface of solids, both utilized the sputter effect of ion, the chemical action that active particle is arranged again, can provide the accurate control of electrode side section and obtain very steep side section, therefore, be widely used in the making of high-frequency sound surface wave SAW device.At present, the aluminium film generally adopts chlorine and boron chloride mist to carry out etching, if film metal and etching gas reaction generate low, the volatile chloride of boiling point, etching just can accurately be controlled the side section.
Summary of the invention
In order to improve transducer performance, improve the useful life of device, the invention provides a kind of manufacture method of surface acoustic wave transducer.Described technical scheme is as follows:
The manufacture method of a kind of surface acoustic wave transducer of the present invention comprises the following steps:
Steps A, on piezoelectric base unit titanium deposition, aluminium molybdenum alloy, titanium, aluminium molybdenum alloy four-level membrane successively;
Step B, coating photoresist also expose into the surface acoustic wave device figure;
The mist of step C, employing chlorine and boron chloride etches away the non-graphics field that photoresist is not covered;
Step D, removal photoresist obtain surface acoustic wave sensor transducer figure.
The manufacture method of a kind of surface acoustic wave transducer of the present invention, in the described steps A, piezoelectric base unit is silicon dioxide, three niobium oxide lithiums or three tantalum oxide lithium piezoelectric crystals.
The manufacture method of a kind of surface acoustic wave transducer of the present invention in the described steps A, adopts magnetron sputtering or RF sputtering method deposition four-level membrane.
The manufacture method of a kind of surface acoustic wave transducer of the present invention, in the described steps A, the THICKNESS CONTROL of described every layer of titanium film is at 5nm to 10nm.
The manufacture method of a kind of surface acoustic wave transducer of the present invention, in the described steps A, the control of the content of molybdenum accounts for 0.1% to 2% of total weight in the aluminium molybdenum alloy.
The manufacture method of a kind of surface acoustic wave transducer of the present invention among the described step B, adopts photoetching or direct electronic beam WriteMode exposure surface acoustic wave transducer figure.
The manufacture method of a kind of surface acoustic wave transducer of the present invention, among the described step C, the mass flow ratio of boron chloride gas and chlorine is 70: 15.
The beneficial effect of technical scheme provided by the invention is:
In the manufacture method of surface acoustic wave transducer of the present invention, adopt titanium and aluminium molybdenum alloy four-level membrane surfacing as transducer.This four tunic can suppress the aluminium atomic migration, improves adhesion of thin film and power holding capacity.In addition, when improving the aluminium film properties, can improve the accuracy of reactive ion etching figure, thereby when improving transducer performance, improve the useful life of device.In addition, manufacture method of the present invention does not influence the precision of figure because of the difficulty that increases reactive ion etching.
Description of drawings
Fig. 1 is the flow chart of the manufacture method of surface acoustic wave transducer provided by the invention;
Fig. 2 is the surface acoustic wave transducer structure chart that the manufacture method of employing surface acoustic wave transducer of the present invention is made.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiment of the present invention is described further in detail below in conjunction with accompanying drawing.
The purpose of this invention is to provide a kind of new improved high-power surface acoustic wave sensor transducer manufacture method.
As shown in Figure 2, the main progress of this method is to adopt titanium 2, aluminium molybdenum alloy 1, titanium 2, aluminium molybdenum alloy 1 four-level membrane to replace traditional aluminium film as the transducer membrane material.
With reference to Fig. 1, its making step is specific as follows:
Step 101: at first titanium deposition 2, aluminium molybdenum alloy 3, titanium 2, aluminium molybdenum alloy 1 four-level membrane successively on piezoelectric base unit 3.
Its piezoelectric base unit 3 can be selected quartz (SiO
2), lithium niobate (LiNbO
3) or lithium tantalate (LiTaO
3) wait piezoelectric crystal.On piezoelectric base unit 3, select to adopt magnetic control or radio frequency sputtering deposition techniques four-level membrane, and guarantee that THICKNESS CONTROL with titanium film 2 is at 5nm to 10nm; The thickness of aluminium molybdenum alloy thin layer 1 changes with the SAW (Surface Acoustic Wave) device frequency.In the aluminium molybdenum alloy, the control of the content of molybdenum accounts for 0.1% to 2% of total weight.
Do not influence the difficulty of etching and the precision of figure in the time of useful life that this four-level membrane can strengthen transducer greatly as transducer material.Simultaneously, the doping of high melting point metal molybdenum can suppress the aluminium atomic migration, and the electromigration resisting property of aluminium molybdenum alloy layer is stronger than single pure aluminium film electromigration resisting property; And four-layer structure itself is better than the electromigration resisting property of single metal.In addition, all right enhanced film of the use of ti interlayer is to the adhesive force of monocrystalline matrix.
Step 102: apply the photoresist post-exposure and become the SAW (Surface Acoustic Wave) device figure.
Can adopt photoetching or direct electronic beam WriteMode exposure surface acoustic wave transducer figure in this step.
Step 103: adopt the mist of chlorine and boron chloride to etch away the non-graphics field that photoresist is not covered.
The mass flow ratio of boron chloride gas and chlorine is 70: 15.Because when adopting chlorine and boron chloride mist etching, doping metals molybdenum and titanium and chlorine are easy to react, and product is volatile substances, can be attached to patterned surface, and influence pattern precision.
Step 104: last, remove photoresist and obtain surface acoustic wave sensor transducer figure.
The invention has the beneficial effects as follows and improve adhesive force and the power holding capacity of conventional aluminum film in high-frequency sound surface wave device, strengthened the useful life of SAW (Surface Acoustic Wave) device greatly, simultaneously do not increase the difficulty of reactive ion etching and influence the precision of figure.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the manufacture method of a surface acoustic wave transducer is characterized in that, described method comprises the following steps:
Steps A, on piezoelectric base unit titanium deposition, aluminium molybdenum alloy, titanium, aluminium molybdenum alloy four-level membrane successively;
Step B, coating photoresist also expose into the surface acoustic wave transducer figure;
The mist of step C, employing chlorine and boron chloride etches away the non-graphics field that photoresist is not covered;
Step D, removal photoresist obtain the surface acoustic wave transducer figure.
2. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, in the described steps A, selecting quartz, lithium borate or lithium tantalate piezoelectric crystal is piezoelectric base unit.
3. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, in the described steps A, adopts magnetron sputtering or RF sputtering method deposition four-level membrane.
4. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, in the described steps A, the THICKNESS CONTROL of described every layer of titanium film is at 5nm to 10nm.
5. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, in the described steps A, the content of molybdenum is controlled to be and accounts for 0.1% to 2% of total weight in the aluminium molybdenum alloy.
6. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, among the described step B, adopts photoetching or direct electronic beam WriteMode exposure surface acoustic wave transducer figure.
7. the manufacture method of a kind of surface acoustic wave transducer according to claim 1 is characterized in that, among the described step C, the mass flow ratio of boron chloride gas and chlorine is 70: 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009103016975A CN101599749A (en) | 2009-04-21 | 2009-04-21 | Method for manufacturing surface acoustic wave transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009103016975A CN101599749A (en) | 2009-04-21 | 2009-04-21 | Method for manufacturing surface acoustic wave transducer |
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| Publication Number | Publication Date |
|---|---|
| CN101599749A true CN101599749A (en) | 2009-12-09 |
Family
ID=41421033
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009103016975A Pending CN101599749A (en) | 2009-04-21 | 2009-04-21 | Method for manufacturing surface acoustic wave transducer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105045038A (en) * | 2015-08-28 | 2015-11-11 | 深圳华远微电科技有限公司 | Submicron-order dry etching process |
| CN108039873A (en) * | 2017-11-30 | 2018-05-15 | 深圳华远微电科技有限公司 | A kind of chip-scale SAW filter production method |
| CN109660225A (en) * | 2018-12-18 | 2019-04-19 | 北方民族大学 | The multi-layer piezoelectric substrate and preparation method thereof of beryllium alumin(i)um alloy film is set |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
-
2009
- 2009-04-21 CN CNA2009103016975A patent/CN101599749A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105045038A (en) * | 2015-08-28 | 2015-11-11 | 深圳华远微电科技有限公司 | Submicron-order dry etching process |
| CN108039873A (en) * | 2017-11-30 | 2018-05-15 | 深圳华远微电科技有限公司 | A kind of chip-scale SAW filter production method |
| CN109660225A (en) * | 2018-12-18 | 2019-04-19 | 北方民族大学 | The multi-layer piezoelectric substrate and preparation method thereof of beryllium alumin(i)um alloy film is set |
| CN109660225B (en) * | 2018-12-18 | 2023-03-03 | 北方民族大学 | Multi-layer piezoelectric substrate provided with beryllium-aluminum alloy film and preparation method thereof |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
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Open date: 20091209 |