CN109660225B - Multi-layer piezoelectric substrate provided with beryllium-aluminum alloy film and preparation method thereof - Google Patents
Multi-layer piezoelectric substrate provided with beryllium-aluminum alloy film and preparation method thereof Download PDFInfo
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- CN109660225B CN109660225B CN201811552537.3A CN201811552537A CN109660225B CN 109660225 B CN109660225 B CN 109660225B CN 201811552537 A CN201811552537 A CN 201811552537A CN 109660225 B CN109660225 B CN 109660225B
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- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 230000007704 transition Effects 0.000 claims description 20
- 229910052790 beryllium Inorganic materials 0.000 claims description 18
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 150000001572 beryllium Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14564—Shifted fingers transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides a multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film, which comprises a piezoelectric substrate layer and a conductive layer which are sequentially arranged, wherein the conductive layer is the beryllium-aluminum alloy film; in addition, the alloy film and the aluminum film are both metal films, and the alloy film and the aluminum film are combined by metal bonds, so that the combination state is good, and the aluminum film is not easy to fall off.
Description
Technical Field
The invention relates to the technical field of preparation of substrates for filters, in particular to a multi-layer piezoelectric substrate provided with a beryllium-aluminum alloy film and a preparation method thereof.
Background
In surface acoustic wave devices, aluminum films are the most suitable material for producing surface acoustic waves due to their relatively low acoustic resistance. However, in the process of growing the aluminum film, the lattice of the grown aluminum film is strictly distorted due to the lattice mismatch with the matrix piezoelectric material, the aluminum film has larger stress, and in the application of surface acoustic waves, the phenomenon that the electrode falls off due to the separation of the aluminum film and the matrix material is easily generated under the action of high-frequency and high-power acoustoelectric force.
In the cellular radio application of saw filters, devices are required to withstand up to 1W of transmitted or received power. However, under the action of large current, due to the migration effect of aluminum atoms, the electrode is easily broken or short-circuited, and the high temperature brought by high power to the surface of the substrate makes the device easily fail.
Disclosure of Invention
There is a need for a multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film.
It is also necessary to provide a method for producing a multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film.
A multi-layer piezoelectric substrate provided with a beryllium-aluminum alloy film comprises a piezoelectric base body layer and a conducting layer which are sequentially arranged, wherein the conducting layer is the beryllium-aluminum alloy film.
A method for preparing the multi-layer piezoelectric substrate provided with the beryllium-aluminum alloy film comprises the following steps:
step 1, soaking the piezoelectric substrate layer in a mixed acid solution to enable the surface of the substrate to be in a hydrophobic state, so that metal atoms can be attached to the surface of the substrate;
step 2, depositing a conductive layer on the surface of the piezoelectric substrate layer by utilizing magnetron sputtering;
the invention selects metal matched with the lattice structure of the substrate of the interdigital transducer 200 of the surface acoustic wave filter as a sputtering film material so as to improve the service life and the temperature stability of the interdigital transducer.
Drawings
Fig. 1 is a schematic structural diagram of the interdigital transducer arranged on a multilayer piezoelectric substrate.
Fig. 2 is a cross-sectional view of a portion of a multi-layer piezoelectric substrate.
Fig. 3 is a cross-sectional view of a portion of a multi-layer piezoelectric substrate in accordance with another embodiment.
In the figure: the composite piezoelectric substrate 100, the piezoelectric base layer 10, the transition layer 20, the conductive layer 30 and the interdigital transducer 200.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Referring to fig. 1 and 2, in an embodiment of the present invention, a multilayer piezoelectric substrate 100 provided with a beryllium-aluminum alloy film is provided, and in an embodiment, the multilayer piezoelectric substrate includes a piezoelectric substrate layer 10 and a conductive layer 30, which are sequentially provided, where the conductive layer 30 is a beryllium-aluminum alloy film.
Referring to fig. 1 and 3, in another embodiment, the interdigital transducer includes a piezoelectric substrate layer 10, a transition layer 20, and a conductive layer 30, which are sequentially disposed, where the transition layer 20 is a beryllium aluminum alloy film, and the conductive layer 30 is an aluminum film.
Further, the ratio of the beryllium content to the aluminum content in the beryllium-aluminum alloy film is 20% -40%: 80 to 60 percent. For example, the ratio of the two may be 20%:80% and 30%:70% and 50%:50%, etc.
The invention adopts beryllium-aluminum alloy as a transition film material, wherein beryllium is in a hexagonal crystal system structure, and the crystal system structure and lattice parameters are shown in the following table:
because aluminum is a cubic system and piezoelectric substrate materials such as lithium niobate and lithium tantalate are a hexagonal system, when an aluminum film directly grows on the lithium niobate and the lithium tantalate, the lattice structures of the aluminum film and the lithium tantalate are not matched, and because the aluminum film is a metal film and the piezoelectric substrate layer 10 is a non-metal material layer, the lattice of the growing aluminum film is strictly distorted, and the stress of the aluminum film is large.
Therefore, the beryllium-aluminum alloy is used as the sputtering film, the beryllium is in a hexagonal crystal system and is easy to combine with the piezoelectric base layer with the same lattice structure, the aluminum in the alloy can be used as a sound transmission material and used as a conductive layer in the first embodiment, the sound transmission efficiency of the aluminum film is improved by only using the aluminum, and the problem of poor combination caused by different lattice structures between the aluminum film and the piezoelectric substrate is solved by using the beryllium;
in another embodiment, the alloy film is used as a transition layer connected between the aluminum film and the piezoelectric substrate, so that the problem of poor combination caused by different lattice structures between the aluminum film and the piezoelectric substrate is solved; in addition, the alloy film and the aluminum film are both metal films, and the alloy film and the aluminum film are combined by metal bonds, so that the combination state is good, and the aluminum film is not easy to fall off.
It can be seen that the present solution solves both of the above-described problems associated with the bonding of the aluminum film to the piezoelectric substrate layer 10.
Further, the thickness of the transition layer 20 may be determined according to a sputtering process design.
Further, the transition layer 20 has a multilayer structure, and the multilayer structure of the transition layer 20 is a beryllium film and a beryllium aluminum alloy film which are sequentially arranged at intervals. For example, the transition layer 20 may have a two-layer structure of a beryllium film and a beryllium aluminum alloy film, a three-layer structure of a beryllium film, a beryllium aluminum alloy film, and a three-layer structure of a beryllium film, a beryllium aluminum alloy film, a beryllium film, and a beryllium aluminum alloy film, which are provided in this order.
Further, the material of the piezoelectric substrate layer 10 is one of lithium niobate, lithium tantalate, quartz, and langasite.
The present invention also provides a method for preparing the multilayer piezoelectric substrate, which comprises the following steps:
step 1, soaking a piezoelectric matrix layer 10 in a mixed acid solution to make the surface of a substrate in a hydrophobic state, so as to facilitate the adhesion of metal atoms thereon;
step 2, depositing a conductive layer 30 on the surface of the piezoelectric substrate layer 10 by magnetron sputtering;
in another embodiment, the preparation method comprises the following steps:
step 1, soaking a piezoelectric matrix layer 10 in a mixed acid solution to make the surface of a substrate in a hydrophobic state, so as to facilitate the adhesion of metal atoms thereon;
step 2, depositing a layer of transition layer 20 film on the surface of the piezoelectric substrate layer 10 by magnetron sputtering;
and 3, depositing a conductive layer 30 on the surface of the transition layer 20 by magnetron sputtering.
Further, in step 1, the mixed acid solution is a mixed solution of hydrofluoric acid and sulfuric acid, or a mixed solution of hydrofluoric acid and nitric acid.
Further, in step 1, the piezoelectric substrate layer 10 is soaked in the mixed acid solution, and nitrogen gas is blown into the mixed acid solution at the same time, so as to enhance the cleaning capability of the surface of the piezoelectric substrate layer 10.
The composite piezoelectric substrate of the invention is extracted to carry out a power durability test and a service life detection test, and the following data are obtained:
| conducting layer (thickness) | Transition layer (thickness) | Life test (double) | Power durability test (dBm) | Remarks for note |
| Al（100nm） | Nothing (0 nm) | 1 | 29.0 | Symbol a |
| None (0 nm) | BeAl(40nm) | 10 | 32.0 | Symbol b |
| Nothing (0 nm) | Be(8nm) / BeAl(32nm) | 18 | 33.6 | Marking c |
| Nothing (0 nm) | Be(4nm)/BeAl(4nm)/ Be(4nm) / BeAl (24nm) | 35 | 35.0 | Sign d |
The substrate in the table is a lithium tantalate wafer as an example, and as can be seen from the table, the mark a substrate is a two-layer structure only comprising a lithium tantalate substrate layer and an aluminum conductive layer in the background art; the substrate marked b is a two-layer structure provided with a beryllium-aluminum alloy layer as a conducting layer, so that the service life of the two-layer structure is multiplied, and the durability of the two-layer structure is obviously improved; the substrates marked c and d are respectively of a multilayer structure provided with two layers of films and four layers of films, so that the service life of the substrate provided with the multilayer structure is multiplied, and the durability of the substrate is obviously improved.
It can also be seen from the above table that in the original design of the mark a, the thickness of the piezoelectric substrate layer is not calculated, and the thickness of the single aluminum layer is 100nm, whereas in the present invention, in the substrates of the marks b, c, and d, the total thickness of the transition layer is 40nm, the thickness of the transition layer becomes thinner, the thinner transition layer is beneficial to reducing the acoustic resistance and improving the sound velocity, and in addition, as can be seen from the power durability data, the firmness of the transition layer is increased.
The modules or units in the device of the embodiment of the invention can be combined, divided and deleted according to actual needs.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (6)
1. A multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film is characterized in that: the piezoelectric ceramic film comprises a piezoelectric substrate layer, a transition layer and a conducting layer which are sequentially arranged, wherein the transition layer is of a multi-layer structure of beryllium films and beryllium aluminum alloy films which are sequentially arranged at intervals, and the conducting layer is an aluminum film.
2. A multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film as set forth in claim 1, wherein: the ratio of the beryllium content to the aluminum content in the beryllium-aluminum alloy film is 20-40%: 80 to 60 percent.
3. The multilayer piezoelectric substrate provided with a beryllium-aluminum alloy film according to claim 1, wherein: the piezoelectric substrate layer is made of one of lithium niobate, lithium tantalate, quartz and lanthanum gallium silicate.
4. A method of producing a multilayer piezoelectric substrate according to any one of claims 1 to 3, comprising the steps of:
step 1, soaking the piezoelectric substrate layer in a mixed acid solution to enable the surface of the substrate to be in a hydrophobic state, so that metal atoms can be attached to the surface of the substrate;
step 2, depositing a transition layer on the surface of the piezoelectric substrate layer by utilizing magnetron sputtering;
and 3, depositing a conductive layer on the surface of the transition layer by utilizing magnetron sputtering.
5. A method of producing a multilayer piezoelectric substrate according to claim 4, wherein: in step 1, the mixed acid solution is a mixed solution of hydrofluoric acid and sulfuric acid, or a mixed solution of hydrofluoric acid and nitric acid.
6. A method of producing a multilayer piezoelectric substrate according to claim 4, wherein: in step 1, the piezoelectric substrate layer is soaked in the mixed acid solution, and nitrogen is blown into the mixed acid solution to enhance the cleaning capability of the surface of the piezoelectric substrate layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811552537.3A CN109660225B (en) | 2018-12-18 | 2018-12-18 | Multi-layer piezoelectric substrate provided with beryllium-aluminum alloy film and preparation method thereof |
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| CN201811552537.3A CN109660225B (en) | 2018-12-18 | 2018-12-18 | Multi-layer piezoelectric substrate provided with beryllium-aluminum alloy film and preparation method thereof |
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| CN109660225B true CN109660225B (en) | 2023-03-03 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624539B1 (en) * | 1997-05-13 | 2003-09-23 | Edge Technologies, Inc. | High power ultrasonic transducers |
| CN101599749A (en) * | 2009-04-21 | 2009-12-09 | 中国科学院微电子研究所 | Method for manufacturing surface acoustic wave transducer |
| CN102111121A (en) * | 2009-12-25 | 2011-06-29 | 株式会社村田制作所 | Acoustic wave device |
| CN102377402A (en) * | 2010-08-16 | 2012-03-14 | 精工爱普生株式会社 | Piezoelectric vibration device, method of manufacturing the same, and method of adjusting resonant frequency |
| CN203631107U (en) * | 2013-11-27 | 2014-06-04 | 北方民族大学 | Exoelectron test system of medium protective film material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007674A (en) * | 1999-06-24 | 2001-01-12 | Toyo Commun Equip Co Ltd | Surface acoustic wave device |
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2018
- 2018-12-18 CN CN201811552537.3A patent/CN109660225B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624539B1 (en) * | 1997-05-13 | 2003-09-23 | Edge Technologies, Inc. | High power ultrasonic transducers |
| CN101599749A (en) * | 2009-04-21 | 2009-12-09 | 中国科学院微电子研究所 | Method for manufacturing surface acoustic wave transducer |
| CN102111121A (en) * | 2009-12-25 | 2011-06-29 | 株式会社村田制作所 | Acoustic wave device |
| CN102377402A (en) * | 2010-08-16 | 2012-03-14 | 精工爱普生株式会社 | Piezoelectric vibration device, method of manufacturing the same, and method of adjusting resonant frequency |
| CN203631107U (en) * | 2013-11-27 | 2014-06-04 | 北方民族大学 | Exoelectron test system of medium protective film material |
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