CN112600530A - Dry etching process method for thick-film surface acoustic wave filter - Google Patents
Dry etching process method for thick-film surface acoustic wave filter Download PDFInfo
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- CN112600530A CN112600530A CN202011319693.2A CN202011319693A CN112600530A CN 112600530 A CN112600530 A CN 112600530A CN 202011319693 A CN202011319693 A CN 202011319693A CN 112600530 A CN112600530 A CN 112600530A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000008569 process Effects 0.000 title claims abstract description 36
- 238000001312 dry etching Methods 0.000 title claims abstract description 29
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 16
- 238000001020 plasma etching Methods 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 229910015844 BCl3 Inorganic materials 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000006227 byproduct Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 229910002065 alloy metal Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Drying Of Semiconductors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a dry etching process method of a thick-film surface acoustic wave filter, which comprises the following steps: s1, placing the acoustic surface device into the plasma etching cavity; s2, vacuumizing; 3. introducing BCl of 45-55sccm into the plasma etching chamber39-12sccm Cl213-16sccm of N2Carrying out primary etching on the mixed gas; s4, stopping charging BCl3And Cl2Gas, N2The flow rate of (2) is controlled to be 14-15 sccm; s5, pausing; s6, secondary etching; and S7, secondary passivation. The dry etching process method can realize the dry etching of the thick film acoustic surface device, and ensures the uniform line width of the finger strips of the device and the stable performance of the product.
Description
Technical Field
The invention relates to a dry etching process method, in particular to a dry etching process method of a thick-film surface acoustic wave filter.
Background
With the rapid development of modern mobile communication, the types of surface acoustic wave filters (SAWF is called acoustic surface for short) are more and more, the process requirements of different design structures are different at different frequencies, so that corresponding higher requirements are provided for the process design, the thickness range of the deposited alloy metal film is expanded from several hundred angstroms to about 5000 angstroms to be thicker, and the alloy metal film even reaches more than 10000 angstroms.
The traditional dry etching process is easy to control the process of etching the conventional alloy metal film of hundreds of angstroms to 5000 angstroms, and the surface of the finger strip of the acoustic surface device does not have too many adverse conditions. However, for the alloy metal film with thickness of more than 5000 angstroms or even thicker, the lateral corrosion of the finger strips is serious, foreign matters are attached to the surface, the surface of the whole wafer is blackened, and the like, so that the product is poor and even scrapped. The figure clearly shows the defects obtained by using the existing dry etching process for the thick-film surface acoustic wave filter.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the dry etching process method for the thick-film surface acoustic wave filter can realize the dry etching of the thick-film surface acoustic wave device, and ensures the uniform line width of the finger strips of the device and the stable performance of the product.
In order to solve the technical problems, the technical scheme of the invention is as follows: a dry etching process method for a thick film surface acoustic wave filter comprises the following steps:
s1, placing the acoustic surface device with the metal film deposited on the surface into a plasma etching cavity;
s2, vacuumizing to make the pressure in the plasma etching cavity be 1 multiplied by 10-3pa；
S3, primary etching
Controlling the output power of an RF power supply of the plasma etching cavity to be 300W, and providing a continuous electric field in the plasma etching cavity; introducing BCl of 45-55sccm into the plasma etching chamber39-12sccm Cl213-16sccm of N2Carrying out primary etching on the mixed gas for t 1;
s4, primary passivation
Stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Bombarding reaction byproducts attached to the surface of the acoustic surface device for 20 seconds by continuous ionization, and then carrying out N2The flow rate is reduced to zero at a constant speed within 5 seconds, the RF power supply is closed, and the vacuum pumping is continuously carried out in the period;
s5, pause
Starting a vacuumizing system to vacuumize the plasma etching chamber, wherein the pause time is 3-5 seconds; during which the plasma etching chamber is continuously evacuated to a pressure of 1 × 10-3pa；
S6, secondary etching
Controlling the output power of an RF power supply of the plasma etching cavity to be 300W, and providing a continuous electric field in the plasma etching cavity; introducing BCl of 50-55sccm into the plasma etching chamber310-12sccm Cl215-16sccm of N2Carrying out primary etching on the mixed gas for t 2;
s7, secondary passivation
Stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Continuously ionizing for 15-20 seconds to bombard reaction byproducts attached to the surface of the acoustic surface device, continuously vacuumizing and turning off an RF power supply during the period, and then N2The flow rate is reduced to zero at a constant speed within 5 seconds, and the vacuumizing system continuously vacuumizes to discharge reaction byproducts.
As a preferred scheme, when the thickness of the metal film on the surface of the acoustic watch device is 15000-
And S8, repeating the steps S3 to S7.
Preferably, t1 is equal to t2 and equal to 15 seconds.
Preferably, in step S3, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
Preferably, in step S6, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
Preferably, in the steps S4 and S7, N is2The flow rate of (2) was controlled to 15 sccm.
After the technical scheme is adopted, the invention has the effects that: the dry etching process method has the advantages that the mode of alternately accumulating and switching the primary etching, the primary passivation, the secondary etching and the secondary passivation in the etching process greatly weakens the lateral etching degree in the dry etching, the reaction polymer generated in the continuous passivation process is effectively pumped away by a vacuum pumping system in time, the process solves the technical problem of the dry etching of the thick film acoustic surface device, the lateral corrosion is intensified to a certain degree in the plasma etching process, through the process, the redundant reaction polymer is further removed, the lateral corrosion effect is slowed down, the lines are uniform and can be closer to the width of a plate making design, the line width and the duty ratio of the thick film acoustic surface device are effectively controlled, and the actual manufacturing of a product meets the design requirement.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic microscope magnification of a product after dry etching in the prior art:
FIG. 2 is a schematic diagram of an initial stage of a primary etch;
FIG. 3 is a schematic diagram of an etching process;
FIG. 4 is a schematic illustration of a passivation process;
FIG. 5 is a schematic diagram of a secondary etch process;
FIG. 6 is a schematic illustration of a second passivation;
FIG. 7 is a final cross-sectional and microscopic magnification schematic of the sonographic device after the dry etch process of the present invention;
Detailed Description
The present invention is described in further detail below with reference to specific examples.
As shown in fig. 1, fig. 1 discloses the product defect in the prior art dry etching process, and the black polymer in the device line is much as can be seen from the left side of the drawing, while the black polymer is clearly seen from the right side: the top view of the device lines is very severe.
As shown in fig. 2 to 7, a dry etching process method for a thick film surface acoustic wave filter includes the following steps:
s1, placing the acoustic surface device with the metal film deposited on the surface into a plasma etching cavity; as shown in fig. 2, the charged gas is ionized to form a plasma environment under the action of the strong electric field of dry etching.
S2, vacuumizing to make the pressure in the plasma etching cavity be 1 multiplied by 10-3pa；
S3, primary etching, as shown in fig. 3,
controlling the output power of an RF power supply of the plasma etching cavity to be 300W, and providing a continuous electric field in the plasma etching cavity; introducing BCl of 45-55sccm into the plasma etching chamber39-12sccm Cl213-16sccm of N2Carrying out primary etching on the mixed gas for t 1; with the lengthening of the gas introduction time, the gas ionization degree is higher and higher, the generated etching ions and reaction polymers are more and more, the metal lines are etched in an accelerated manner, but partial reaction byproducts are gradually increased at the moment, and the risk of further adhering to the surface of the wafer to further corrode the lines is generated; in the step S3, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
S4, primary passivation, as shown in fig. 4,
stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Bombarding reaction byproducts attached to the surface of the acoustic surface device for 20 seconds by continuous ionization, and then carrying out N2The flow rate is reduced to zero at a constant speed within 5 seconds, the RF power supply is closed, and the vacuum pumping is continuously carried out in the period; in the plasma environment, ions continuously bombard reaction byproducts attached to the device to be separated and rapidly pumped away by vacuum, and N is stopped2Then, the exhaust state is still kept, so that the plasma etching cavity is restored to the state before normal etching;
s5, pause
Starting a vacuumizing system to vacuumize the plasma etching chamber, wherein the pause time is 3-5 seconds; during which the plasma etching chamber is continuously evacuated to a pressure of 1 × 10-3pa；
S6, secondary etching, as shown in fig. 5,
controlling the output power of an RF power supply of the plasma etching cavity to be 300W, and providing a continuous electric field in the plasma etching cavity; introducing BCl of 50-55sccm into the plasma etching chamber310-12sccm Cl215-16sccm of N2Carrying out primary etching on the mixed gas for t 2; in the step S6, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
S7, secondary passivation, as shown in fig. 6,
stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Continuously ionizing for 15-20 seconds to bombard reaction byproducts attached to the surface of the acoustic surface device, continuously vacuumizing and turning off an RF power supply during the period, and then N2The flow rate is reduced to zero at a constant speed within 5 seconds, and the vacuumizing system continuously vacuumizes to discharge reaction byproducts.
In the step S4 and the step S7, N2The flow rate of (2) was controlled to 15 sccm.
Finally, the saw filter device shown in fig. 7 can be obtained, the lines are very regular as seen from the schematic cross-sectional view, and the corrosion of the limit position is very small as seen from the enlarged schematic view of the microscope.
When the thickness of the metal film on the surface of the acoustic surface device is 15000-.
Wherein the t1 is equal to t2 and equal to 15 seconds.
The control of the dry etching process is particularly important, and the dry etching process not only ensures that metal lines required by design can be etched, but also must prevent the corrosion and pollution of side reaction products to devices. The invention realizes the dry etching process of the thick film acoustic surface device by utilizing etching-passivation alternative accumulation treatment.
1. The process solves the technical problem of dry etching of the thick film acoustic surface device.
2. During plasma etching, lateral corrosion is aggravated to a certain degree, and through the process, redundant reaction polymers are further removed, the lateral corrosion effect is slowed down, lines are uniform, and the width of the line can be closer to the width of a plate making design.
The above-mentioned embodiments are merely descriptions of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and alterations made to the technical solution of the present invention without departing from the spirit of the present invention are intended to fall within the scope of the present invention defined by the claims.
Claims (6)
1. A dry etching process method for a thick film surface acoustic wave filter is characterized by comprising the following steps: the method comprises the following steps:
s1, placing the acoustic surface device with the metal film deposited on the surface into a plasma etching cavity;
s2, vacuumizing to make the pressure in the plasma etching cavity be 1 multiplied by 10-3pa；
S3, primary etching
Controlling the output power of an RF power supply of the plasma etching cavity to be 300W, and providing a continuous electric field in the plasma etching cavity; introducing BCl of 45-55sccm into the plasma etching chamber39-12sccm Cl213-16sccm of N2Carrying out primary etching on the mixed gas for t 1;
s4, primary passivation
Stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Bombarding reaction byproducts attached to the surface of the acoustic surface device for 20 seconds by continuous ionization, and then carrying out N2The flow rate is reduced to zero at a constant speed within 5 seconds, the RF power supply is closed, and the vacuum pumping is continuously carried out in the period;
s5, pause
Starting a vacuumizing system to vacuumize the plasma etching chamber, wherein the pause time is 3-5 seconds; during which the plasma etching chamber is continuously evacuated to a pressure of 1 × 10-3pa；
S6, secondary etching
Controlling the output power of the RF power supply of the plasma etching cavity to be 300W, and providing support for the plasma etching cavityA continuous electric field; introducing BCl of 50-55sccm into the plasma etching chamber310-12sccm Cl215-16sccm of N2Carrying out primary etching on the mixed gas for t 2;
s7, secondary passivation
Stop charging BCl3And Cl2Gas, N2The flow rate of the RF power supply is controlled to be 14-15sccm, and the power output power of the RF power supply is 160W, N2Continuously ionizing for 15-20 seconds to bombard reaction byproducts attached to the surface of the acoustic surface device, continuously vacuumizing and turning off an RF power supply during the period, and then N2The flow rate is reduced to zero at a constant speed within 5 seconds, and the vacuumizing system continuously vacuumizes to discharge reaction byproducts.
2. The dry etching process method for the thick film surface acoustic wave filter as claimed in claim 1, wherein: when the thickness of the metal film on the surface of the acoustic watch device is 15000-
And S8, repeating the steps S3 to S7.
3. The dry etching process method for the thick film surface acoustic wave filter as claimed in claim 2, wherein: the t1 is equal to t2 and equal to 15 seconds.
4. The dry etching process method for the thick film surface acoustic wave filter as claimed in claim 3, wherein: in the step S3, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
5. The dry etching process method for the thick film surface acoustic wave filter as claimed in claim 4, wherein: in the step S6, BCl is introduced3Flow rate of 50sccm, Cl2At a flow rate of 10sccm, N2The flow rate of (2) is 15 sccm.
6. The dry etching process for thick film surface acoustic wave filter as claimed in claim 5, wherein:in the step S4 and the step S7, N2The flow rate of (2) was controlled to 15 sccm.
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