CN116408310A - Ion beam etching cavity particle removing method - Google Patents
Ion beam etching cavity particle removing method Download PDFInfo
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- CN116408310A CN116408310A CN202111669411.6A CN202111669411A CN116408310A CN 116408310 A CN116408310 A CN 116408310A CN 202111669411 A CN202111669411 A CN 202111669411A CN 116408310 A CN116408310 A CN 116408310A
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- 238000005530 etching Methods 0.000 title claims abstract description 142
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 137
- 239000002245 particle Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 230000001133 acceleration Effects 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000013618 particulate matter Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a method for removing particles in an ion beam etching cavity. The ion beam etching cavity particle removing method comprises the following steps: after the ion beam etching wafer process is finished, the reaction ion beam is adopted to etch the ion beam etching cavity under the existence of preset ion energy, ion beam current and gas, and then vacuum is pumped. The invention adopts the reaction ion beam to etch the ion beam etching cavity, can reduce the particle quantity in the ion beam etching cavity, improve the environment in the ion beam etching cavity, and improve the ion beam etching stability and the product yield.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to a method for removing particles in an ion beam etching cavity.
Background
Ion Beam Etching (IBE) is a type of dry etching, and uses an ion beam with certain energy to bombard the surface of a material, so that the surface of the material is sputtered, and etching is achieved.
In the ion beam etching process, gas Ar, O 2 Etc. into the quartz cavity discharge chamber, a Radio Frequency (RF) coil initiatesHigh frequency ionization of Ar, O 2 Generating plasma, wherein the plasma is gathered into positively charged ion beams through a grid mesh, the positively charged ion beams are neutralized by electrons emitted by a neutralizer to form electrically neutral ion beams, the electrically neutral ion beams bombard a wafer on a carrier, and byproducts are pumped away by a vacuum system.
Ion beam etching is provided by an ion source, so that the damage to the substrate is small, and the etching rate is high. Ion beam etching is not selective to materials, and is particularly suitable for thinning materials which are difficult to thin by chemical grinding and dielectric grinding. The ion beam etching has the characteristic of anisotropic etching, and the etched pattern has high transfer precision and small line width loss of thin lines. The ion beam etching does not need reaction gas in the etching process, has safe process and small environmental pollution, and is particularly suitable for etching materials which are difficult to etch by adopting a chemical method and precise ultrathin films.
In the ion beam etching process, when the service time of the reaction cavity is long, non-volatile byproducts generated in the etching process are attached to the inner wall of the cavity, along with the progress of the etching process, the deposits on the inner wall of the cavity are continuously accumulated, and the deposits can crack when reaching a critical value, so that the following problems are caused: the generation of sidewall sediment can change the chamber environment, affect the etching rate and the technological parameters such as uniformity, etc., and cause the fluctuation of the etching technological parameters; deposit cracking can create a large amount of particles in the IBE chamber, with some particles falling to the wafer surface, reducing product yield.
In order to improve the stability of ion beam etching and the yield of products, the number of particles in a chamber needs to be reduced when an etching process is performed. At present, in order to solve the particle problem in the etching process, the common solution in the industry is to reduce the particle number through repeated running of a control piece after the wafer is etched by IBE and the particle exceeding phenomenon occurs, or to open a cavity PM (particulate matter) for IBE, and to reduce the particle number in the cavity by a manual wiping method.
Disclosure of Invention
Accordingly, the present invention is directed to a method for removing particles from an ion beam etching chamber, which is beneficial to reducing the particle size in the ion beam etching chamber.
In order to achieve the above object, the technical scheme of the invention is a method for removing particles in an ion beam etching chamber, comprising the following steps: after the ion beam etching wafer process is finished, the reaction ion beam is adopted to etch the ion beam etching cavity under the existence of preset ion energy, ion beam current and gas, and then vacuum is pumped.
In the ion beam etching process, generated non-volatile particles are attached to the inner wall of the ion beam etching chamber, so that the environment of the chamber is affected. When the ion beam etching cavity particle is removed, other physical operations such as cavity opening, dummy sheet running and the like are not needed, and the particle number in the ion beam etching cavity is reduced under the condition of not opening the cavity by using a reaction ion beam etching method.
The invention adopts ion beam to etch the wafer, and sputters the ion beam etching cavity, particles are generated in the cavity, the ion beam etching parameter can be any parameter, the invention is not limited in this, the material of the wafer is organic matter, including Pt and SiO 2 One or more of Ru, mgO, siN, tiN, C, ag, ta, fe, co, taN, MTJ and PR, the particles in the chamber comprising Pt, siO 2 One or more of Ru, mgO, siN, tiN, C, ag, ta, fe, co, taN, MTJ and PR. In one embodiment, the wafer is made of PR, C, ta, MTJ and SiO 2 . In one embodiment, the ion beam etching method specifically comprises the following steps: applying ion energy on the quartz barrel by a radio frequency power supply, and introducing 12sccm argon to start; applying an acceleration voltage of 400V to the first layer of grid, applying a deflection voltage of 400V to the second layer of grid, and carrying out Beam drawing by using ion Beam flux of 0.235A and argon of 12 sccm; opening a baffle plate, and performing ion beam etching, wherein the etching process parameters are as follows: the ion beam angle is-37 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 400V, the BMI is 0.235A, the etching cavity pressure is 2mT, the gas flow is 12sccm, the gas is argon, the rotating speed of an electrostatic adsorption chuck carrier (ESC carrier) is 30rpm/min, and the etching time is 600s.
After the ion beam etching wafer process is finished, the ion beam etching ESC carrier, the wafer surface and the chamber generate particles, a reaction ion beam is adopted to etch an ion beam etching cavity, and the ion beam etching cavity is cleaned by generating a reaction ion beam through plasma starting and beam pulling, so that the particles are removed.
The ion energy of the ion beam etching cavity for the reactive ion beam etching is 50-2000 eV; the ion beam current is 0.001-2A; the gas is one or more of argon, oxygen, nitrogen, fluorine-based gas, chlorine-based gas, alcohol gas, carbon monoxide, carbon dioxide and ammonia, preferably one or more of argon, oxygen and nitrogen. The ion energy is set according to the number and the size of particles in an ion beam etching chamber; the ion beam current is set according to ion energy and ion acceleration bias. In one embodiment, the gas used for reactive ion beam etching is oxygen. In one embodiment, the gas used for reactive ion beam etching is oxygen, and also includes argon.
The parameters of the ion beam etching cavity for the reactive ion beam etching are as follows: the ion beam angle is-90 degrees, the ion acceleration bias voltage is 30-2000V, the etching cavity pressure is 0.001-1T, the gas flow is 10-500 sccm, the rotating speed of the electrostatic adsorption chuck carrier is 0-100 rpm/min, and the etching time is 1-3600 s. The gas flow, etching cavity pressure and etching time are set according to the number and the size of particles in an ion beam etching cavity; the ion acceleration bias is set according to ion energy, and the ion acceleration bias can fully draw ions passing through the first layer of grid mesh to the second layer of grid mesh. In one embodiment, the particles of the ion beam etching chamber are removed by cycling for a short period of time (3-5 minutes). In one embodiment, the gases used for reactive ion beam etching are oxygen and argon, and the gas flow is 20-30 sccm.
The reactive ion beam etching specifically comprises the following steps: applying ion energy by a radio frequency power supply, and introducing gas to perform plasma ignition; applying an acceleration voltage to the first layer of grid mesh, applying a deflection voltage to the second layer of grid mesh, and carrying out beam drawing on the ion beam; performing reactive ion beam etching; the acceleration voltage is 30 to 2000V, preferably 30 to 500V, and the deflection voltage is 30 to 2000V, preferably 30 to 500V.
In one embodiment, the gas used for reactive ion beam etching is oxygen, and may also include argon. The principle of removing the particles in the ion beam etching cavity through plasma ignition and beam pulling is as follows:
C+O 2 →CO 2 ；
C x H y O z +O 2 →CO 2 +H 2 O；
particulate matter generated during etching process and O 2 Chemical reactions are generated to produce gases or volatile objects.
In one embodiment, the parameters of the reactive ion beam etching chamber are: the ion beam angle is-40 to-10 degrees, the ion energy is 300-500 eV, the ion acceleration bias voltage is 30-500V, the ion beam current is 0.2-0.6A, the etching cavity pressure is 0.001-0.1T, the gas flow is 20-30 sccm, the rotating speed of the electrostatic adsorption chuck carrier is 0-30 rpm/min, and the etching time is 100-600 s.
In one embodiment, the parameters of the reactive ion beam etching chamber are: the ion beam angle is-20 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 80V, the ion beam current is 0.51A, the etching cavity pressure is 0.002T, the gas flow is 24sccm, the rotating speed of the electrostatic adsorption chuck carrier is 30rpm/min, and the etching time is 180s.
And etching the ion beam etching cavity by adopting a reactive ion beam, and then performing vacuumizing treatment to remove gas and volatile substances.
The invention provides a method for removing particles in an ion beam etching cavity, which adopts a reactive ion beam to etch the ion beam etching cavity, can reduce the number of particles in the ion beam etching cavity, can improve the environment in the ion beam etching cavity under the condition of no cavity opening, and improves the ion beam etching stability and the product yield. Experimental results show that after the particles in the ion beam etching cavity are removed by adopting reactive ion beam etching, the particle size of the particles is more than or equal to 0.07 mu m, and the number is reduced by 62-77%; the particle size is in the range of 0.12 μm or more, and the amount is reduced by 60%.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an ion beam etched wafer material;
FIG. 2 shows the number and distribution of particles in an ion beam etching chamber before and after reactive ion beam etching;
fig. 3 is a graph showing the effect of reactive ion beam etching on the number and distribution of particles in an ion beam etching chamber.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. The present invention is not limited to the following examples, but all other examples obtained by a person of ordinary skill in the art without making any inventive effort are within the scope of the present invention based on the examples in the present invention.
Example 1:
performing ion beam etching by using the ion beam etching material shown in fig. 1;
applying ion energy on the quartz barrel by adopting a radio frequency power supply, and introducing argon with the depth of 12sccm for starting;
applying an acceleration voltage of 400V to the first layer of grid, applying a deflection voltage of 400V to the second layer of grid, and carrying out Beam drawing by using ion Beam flux of 0.235A and argon of 12 sccm;
opening a baffle plate to etch; the process parameters of the etching menu are set as follows: the ion beam angle is-37 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 400V, the BMI is 0.235A, the etching cavity pressure is 2mT, the gas flow is 12sccm, the gas is argon, the rotating speed of the ESC carrier is 30rpm/min, and the etching time is 600s.
The etching materials before and after ion beam etching are shown in fig. 1, fig. 1 is a schematic diagram of ion beam etching wafer materials, and the etching materials are sequentially as follows from top to bottom: PR of 40nm thickness, C of 50nm thickness, 80nm thicknessTa,30nm thickness MTJ and SiO 2 After the substrate is etched by the ion beam, the PR layer in the etching material is completely etched and removed, the C and the MTJ are partially etched and removed, and the particle part generated by etching is attached to the ion beam etching cavity.
And carrying out reactive ion beam etching on the ion beam etching cavity, wherein the etching parameters are as follows:
the ion beam angle is-20 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 80V, the BMI is 0.51A, the etching cavity pressure is 2mT, the gas flow is 24sccm, the gas is oxygen, the rotating speed of the ESC carrier is 30rpm/min, and the etching time is 180s.
The particle removal results are shown in table 1 and fig. 2.
TABLE 1 reaction of the number of particles of different particle sizes in ion beam etching chambers before and after ion beam etching
| Particle size (μm) | ≥0.07 | ≥0.12 |
| Particle count before particle removal | 196 | 149 |
| Particle number after particle removal (particle) | 44 | 30 |
Table 1 shows the number of particles of different particle sizes in the ion beam etching chamber before and after the reactive ion beam etching, and fig. 2 shows the number and distribution of particles in the ion beam etching chamber before and after the reactive ion beam etching. Experimental results show that after the particles are removed from the process menu, the particles in the ion beam etching chamber are obviously reduced.
Example 2:
performing ion beam etching by using the ion beam etching material shown in fig. 1;
applying ion energy on the quartz barrel by a radio frequency power supply, and starting by introducing 12sccm argon;
applying an acceleration voltage of 400V to the first layer of grid, applying a deflection voltage of 400V to the second layer of grid, and carrying out Beam drawing by using ion Beam flux of 0.235A and argon of 12 sccm;
opening a baffle plate for etching, wherein the technological parameters of an etching menu are as follows:
the ion beam angle is-37 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 400V, the BMI is 0.235A, the etching cavity pressure is 2mT, the gas flow is 12sccm, the gas is argon, the rotating speed of the ESC carrier is 30rpm/min, and the etching time is 600s.
The etched material and the post-etch results are shown in fig. 1.
And carrying out reactive ion beam etching on the ion beam etching cavity, wherein the etching parameters are as follows:
the ion beam angle is-20 degrees, the ion energy is 400eV, the ion acceleration bias voltage is 80V, the BMI is 0.51A, the etching cavity pressure is 2mT, the gas is 12sccm oxygen and 12sccm argon, the ESC carrier is 30rpm/min, and the etching time is 180s.
The particle removal results are shown in table 2 and fig. 3.
TABLE 2 influence of reactive ion beam etching on the number of particles in ion beam etching chambers of different particle sizes
| Particle size (μm) | ≥0.07 | ≥0.12 |
| Particle count before particle removal | 183 | 137 |
| Particle number after particle removal (particle) | 69 | 54 |
Table 2 shows the effect of reactive ion beam etching on the number of particles in the ion beam etching chamber with different particle sizes, and FIG. 3 shows the effect of reactive ion beam etching on the number and distribution of particles in the ion beam etching chamber. Experimental results show that after the particles are removed from the process menu, the particles in the ion beam etching chamber are obviously reduced.
The above description of the embodiments is only for aiding in the understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (10)
1. The ion beam etching cavity particle removing method is characterized by comprising the following steps of:
after the ion beam etching wafer process is finished, the reaction ion beam is adopted to etch the ion beam etching cavity under the existence of preset ion energy, ion beam current and gas, and then vacuum is pumped.
2. The method of claim 1, wherein the ion energy is 50-2000 eV.
3. The method of claim 2, wherein the ion beam current is 0.001-2A.
4. The method of claim 3, wherein the gas is one or more of argon, oxygen, nitrogen, fluorine-based gas, chlorine-based gas, alcohol-based gas, carbon monoxide, carbon dioxide, and ammonia.
5. The method of claim 4, wherein the parameters of the reactive ion beam etching method are: the ion beam angle is-90 degrees, the ion acceleration bias voltage is 30-2000V, the etching cavity pressure is 0.001-1T, the gas flow is 10-500 sccm, the rotating speed of the electrostatic adsorption chuck carrier is 0-100 rpm/min, and the etching time is 1-3600 s.
6. The method of claim 4, wherein the gas is oxygen.
7. The method of claim 6, wherein the gas further comprises argon.
8. The method according to any one of claims 1 to 7, wherein the ion beam angle is-40 to-10 °, the ion energy is 300 to 500eV, the ion acceleration bias is 30 to 500V, the ion beam current is 0.2 to 0.6A, the etching chamber pressure is 0.001 to 0.1T, the gas flow is 20 to 30sccm, the electrostatic chuck stage rotation speed is 0 to 30rpm/min, and the etching time is 100 to 600s.
9. The method of claim 1, wherein the reactive ion beam etching is specifically:
applying ion energy by a radio frequency power supply, and introducing gas to perform plasma ignition;
applying an acceleration voltage to the first layer of grid mesh, applying a deflection voltage to the second layer of grid mesh, and carrying out beam drawing on the ion beam;
performing reactive ion beam etching;
the accelerating voltage is 30-2000V, and the deflecting voltage is 30-2000V.
10. The method of claim 1, wherein the ion beam etching chamber particles are organic materials including Pt and SiO 2 One or more of Ru, mgO, siN, tiN, C, ag, ta, fe, co, taN, MTJ and PR.
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| CN202111669411.6A CN116408310A (en) | 2021-12-31 | 2021-12-31 | Ion beam etching cavity particle removing method |
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| CN202111669411.6A CN116408310A (en) | 2021-12-31 | 2021-12-31 | Ion beam etching cavity particle removing method |
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