CN111123665A - Plasma photoresist removing method for surface acoustic wave device - Google Patents
Plasma photoresist removing method for surface acoustic wave device Download PDFInfo
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- CN111123665A CN111123665A CN201911381353.XA CN201911381353A CN111123665A CN 111123665 A CN111123665 A CN 111123665A CN 201911381353 A CN201911381353 A CN 201911381353A CN 111123665 A CN111123665 A CN 111123665A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 136
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 239000007789 gas Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 230000009977 dual effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 N+Ions Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000009272 plasma gasification Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明涉及一种声表面波器件等离子去胶方法，采用两步去胶法，第一步在等离子去胶机的真空反应主去胶室利用工作气体Ⅰ在微波或射频的作用下产生反应的等离子，对光刻胶进行物理轰击作用和化学反应来刻蚀并快速去除绝大部分厚度的光刻胶，第二步利用微波控制的远程等离子发生室内的工作气体Ⅱ产生不具有等离子物理轰击作用的远程等离子对第一步去胶余下的厚度约100到400埃厚度的光刻胶进行刻蚀，如此将快速去除与远程遥控去除相结合，达到去胶速率快同时对器件损伤小的双重目的。
The invention relates to a plasma degumming method for surface acoustic wave devices. A two-step degumming method is adopted. In the first step, a working gas I is used in a vacuum reaction main degumming chamber of a plasma degumming machine to generate a reaction under the action of microwave or radio frequency. Plasma, which performs physical bombardment and chemical reaction on the photoresist to etch and quickly remove most of the thickness of the photoresist. The second step uses the working gas II in the microwave-controlled remote plasma generation chamber to generate no plasma physical bombardment. The remote plasma etches the remaining photoresist with a thickness of about 100 to 400 angstroms in the first step of degumming, so that the rapid removal and remote control removal are combined to achieve the dual purpose of fast degumming rate and less damage to the device. .
Description
Technical Field
The invention relates to the technical field of surface acoustic wave device processing, in particular to a plasma photoresist removing method for a surface acoustic wave device.
Background
The substrate material of a surface acoustic wave device (SAW device) mainly includes quartz, lithium tantalate, lithium niobate, and the like having piezoelectric characteristics. The surface acoustic wave device is composed of interdigital transducers (IDT) which are made of metal conductive films and are staggered with each other and are manufactured on a polished surface of the piezoelectric material. The surface acoustic wave device manufacturing process comprises a series of steps of substrate cleaning, metal conductive film deposition, glue homogenizing, pre-baking, exposure, development, post-baking, etching, glue removal and the like.
The photoresist removing method is mainly divided into two types, namely plasma dry photoresist removing (dry photoresist removing) and organic solvent photoresist removing (wet photoresist removing). The plasma dry photoresist removing is that in a vacuum plasma photoresist removing machine, oxygen plasma is used for bombarding a wafer with photoresist, reactive ion etching is carried out, and the photoresist is removed by plasma gasification. The organic solvent is mainly used for removing photoresist by using acetone, ethanol, special photoresist removing liquid and other photoresist dissolving solutions.
The surface acoustic wave device belongs to a frequency sensitive element, and piezoelectric materials for manufacturing a wafer, such as quartz, lithium tantalate, lithium niobate and the like, are all single crystal materials with strict lattice structures, and have particularly strict requirements on frequency and loss. For surface acoustic wave devices, plasma dry stripping has problems: the surface acoustic wave device belongs to a frequency sensitive element, has high requirements on frequency, loss, bandwidth, out-of-band rejection and the like, and charges accumulated on the surface of a single crystal piezoelectric material can cause the surface of a wafer to generate a discharge phenomenon. In addition, plasma bombardment can cause thinning of electrodes of the surface acoustic wave device, etching and damage of piezoelectric materials, cause frequency shift, and cause lattice damage (plasma damage). When a surface acoustic wave device is processed, the thickness of the photoresist is about 3000 angstroms to 15000 angstroms (0.3 to 1.5 microns), the thickness of the photoresist in the surface acoustic wave device packaging process is about 12000 to 30000 angstroms (1.2 to 3 microns), the photoresist or the packaging photoresist with the thickness needs to be removed, the photoresist removing speed of pure remote control plasma is very low, and the working efficiency cannot meet the photoresist removing speed requirement of the surface acoustic wave device in production.
Disclosure of Invention
The invention provides a plasma photoresist removing method for a surface acoustic wave device, aiming at improving the photoresist removing speed and reducing the damage to the surface acoustic wave device. The invention adopts a two-step photoresist stripping method, and can achieve the dual purposes of high photoresist stripping speed and small damage to devices.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a plasma photoresist removing method for a surface acoustic wave device comprises the following steps:
(1) placing the surface acoustic wave device substrate coated with photoresist between two electrodes in a vacuum reaction main photoresist removing chamber of a plasma photoresist remover, and vacuumizing to 10 DEG-2Pa～10-4Pa, introducing into the vacuum reaction main photoresist removing chamberWorking gas I is introduced to make the vacuum reach 10-2Pa～10-1Pa, turning on a power supply of the vacuum reaction main photoresist removing chamber, generating plasma, adjusting power, gas flow and photoresist removing time to remove photoresist by the plasma, and monitoring a photoresist removing end point by a monitoring part of the plasma photoresist removing machine; the remaining thickness of the photoresist on the surface acoustic wave device substrate coated with the photoresist is 100-400 angstroms after the photoresist is removed;
(2) after photoresist removing in the step (1) is finished, closing a working gas I and a glow starting power supply of a vacuum reaction main photoresist removing chamber, then opening a power supply of a remote plasma generating chamber of a microwave plasma photoresist removing machine, introducing a working gas II into the power supply, then generating remote plasma in the remote plasma generating chamber, wherein the remote plasma enters the vacuum reaction main photoresist removing chamber through a pipeline, the length of the pipeline is 5 cm-50 cm, and the vacuum of the vacuum reaction main photoresist removing chamber is maintained at 10 DEG-2Pa～10- 1Under Pa, adjusting power, gas flow and photoresist stripping time to carry out remote plasma photoresist stripping, and monitoring a photoresist stripping terminal point by a monitoring part of the plasma photoresist stripping machine; the remote plasma generated in the remote plasma chamber flows to the surface of the photoresist of the substrate through a pipeline with the length of 5 cm-50 cm, and Ar in the remote plasma+Ions, N atoms, N+Ions, O atoms, O-Ions, HO-Ion, H+The ions and the like are chemically combined with the photoresist and converted into gaseous substances, and then the gaseous substances are vacuumized, so that the second step of photoresist removal is completed.
(3) Filling N with the gas purity of more than 5N into the vacuum reaction main photoresist removing chamber2And opening the vacuum reaction main photoresist removing chamber to take out the surface acoustic wave device substrate when the pressure of the vacuum reaction main photoresist removing chamber reaches the atmospheric pressure, and finishing photoresist removing.
Further, in the step (1) and the step (2), temperature control gas is introduced in the photoresist stripping process to control the temperature of the surface acoustic wave device substrate in the vacuum reaction main photoresist stripping chamber, and under the action of the temperature control gas, the temperature of the surface acoustic wave device substrate is controlled at a certain set temperature value between 20 ℃ and 120 ℃.
Further, the temperature control gas is helium with purity of more than 5N.
Further, the working gas I and the working gas II are one of argon, oxygen, nitrogen, hydrogen and nitrogen-hydrogen mixed gas, or the working gas I and the working gas II are one or more of argon, oxygen, nitrogen and hydrogen and water vapor mixed gas.
Further, the power supply of the vacuum reaction main degumming chamber in the step (1) is a microwave control power supply with electromagnetic wave frequency of 2.45GHz or a radio frequency control power supply with electromagnetic wave frequency of 13.56 MHz.
Furthermore, the microwave power of the microwave control power supply is 20W to 120W; the radio frequency power of the radio frequency control power supply is 60W to 1200W.
Further, the gas flow in step (1) is 3 to 50 SCCM; the photoresist removing time is 3 min-40 min.
Further, in the step (2), the power supply of the remote plasma generating chamber is a microwave control power supply with an electromagnetic wave frequency of 2.45GHz, and the microwave power of the microwave control power supply is 20W to 50W.
Further, the gas flow in step (2) is 5 to 30 SCCM; the photoresist removing time is 3 min-20 min.
The beneficial technical effects are as follows:
the invention adopts a two-step photoresist stripping method, wherein in the first step, reactive plasma is generated in a vacuum reaction main photoresist stripping chamber of a plasma photoresist stripper by using working gas I under the action of microwave or radio frequency, etching the photoresist by physical bombardment and chemical reaction, quickly removing most of the photoresist, generating remote plasma without plasma physical bombardment by using working gas II in a microwave-controlled remote plasma generating chamber to etch the residual photoresist with the thickness of about 100 to 400 angstroms, thus, the rapid removal is combined with the remote control removal, the first step of plasma etching is firstly carried out to rapidly remove most of the photoresist, then the remote control plasma is carried out to slowly and finely remove the residual photoresist in the first step, therefore, the photoresist can be removed quickly, the photoresist removing speed is improved, and the damage to the surface acoustic wave device can be reduced.
Drawings
Fig. 1 is a schematic structural diagram of a plasma photoresist remover according to the present invention.
Detailed Description
The invention is further described below with reference to the figures and specific examples, without limiting the scope of the invention.
The structure of the plasma photoresist stripper used in the following examples is schematically shown in fig. 1.
Example 1
A plasma photoresist removing method for a surface acoustic wave device comprises the following steps:
(1) placing the surface acoustic wave device substrate coated with the positive photoresist between two electrodes in a vacuum reaction main photoresist removing chamber of a plasma photoresist remover, and vacuumizing to 10 DEG-3Pa, introducing working gas I: n is a radical of2-H2Mixing gas (85% by mass: 15% by mass of nitrogen and hydrogen) and making vacuum to 10%-1Pa, turning on a radio frequency control power supply of the vacuum reaction main degumming chamber to the electrode to glow and generate plasma, wherein the electromagnetic wave frequency of the radio frequency control power supply is 13.56MHz, adjusting the radio frequency power to 400W, the gas flow rate to 40SCCM and the degumming time to be 20min to carry out plasma degumming, and simultaneously monitoring a degumming end point by a monitoring part of the plasma degumming machine; the remaining thickness of the photoresist on the surface acoustic wave device substrate coated with the positive photoresist after photoresist removal is about 200 angstroms;
(2) after the photoresist removing in the step (1) is finished, closing the working gas I and a power supply of a vacuum reaction main photoresist removing chamber, then opening a microwave control power supply of a remote plasma generating chamber of the plasma photoresist removing machine, wherein the electromagnetic wave frequency of the microwave control power supply is 2.45GHz, and introducing a working gas II into the microwave control power supply: o is2、N2、H2Mixed gas of water vapor (mass ratio of oxygen, nitrogen, hydrogen and water vapor is 30%: 30%: 30%: 10%), then remote plasma is generated in the remote plasma generating chamber, the remote plasma enters the main vacuum reaction degumming chamber through a pipeline, the length of the pipeline is 20cm, and the main vacuum reaction degumming chamber is maintainedThe vacuum of the glue chamber is 10-1Under Pa, adjusting the microwave power of 50W, the gas flow of 30SCCM and the photoresist removing time of 5min to carry out remote plasma photoresist removing, and simultaneously monitoring the photoresist removing end point by a monitoring part of the plasma photoresist removing machine;
in the two-step photoresist stripping process, introducing helium with purity of more than 5N into the vacuum reaction main photoresist stripping chamber as temperature control gas to control the temperature of the surface acoustic wave device substrate in the vacuum reaction main photoresist stripping chamber, wherein under the action of the temperature control gas, the temperature of the surface acoustic wave device substrate is controlled to be 90 ℃;
(3) filling N with the gas purity of more than 5N into the vacuum reaction main photoresist removing chamber2And opening the vacuum reaction main photoresist removing chamber to take out the surface acoustic wave device substrate when the pressure of the vacuum reaction main photoresist removing chamber reaches the atmospheric pressure, and finishing photoresist removing.
Example 2
A plasma photoresist removing method for a surface acoustic wave device comprises the following steps:
(1) placing the surface acoustic wave device substrate coated with the positive photoresist between two electrodes in a vacuum reaction main photoresist removing chamber of a plasma photoresist remover, and vacuumizing to 10 DEG-2Pa, introducing working gas I: n is a radical of2-H2Mixing gas (nitrogen and hydrogen in a mass ratio of 90%: 10%) and vacuum-pumping to 10%-1Pa, turning on a radio frequency control power supply of the vacuum reaction main degumming chamber to the electrode to glow and generate plasma, wherein the electromagnetic wave frequency of the radio frequency control power supply is 13.56MHz, the radio frequency power is adjusted to be 350W, the gas flow is adjusted to be 35SCCM, and the degumming time is adjusted to be 20min to carry out plasma degumming, and meanwhile, a monitoring part of the plasma degumming machine monitors the degumming end point; the remaining thickness of the photoresist on the surface acoustic wave device substrate coated with the positive photoresist after photoresist removal is about 150 angstroms;
(2) after the photoresist removing in the step (1) is finished, closing the working gas I and a power supply of a vacuum reaction main photoresist removing chamber, then opening a microwave control power supply of a remote plasma generating chamber of the plasma photoresist removing machine, wherein the electromagnetic wave frequency of the microwave control power supply is 2.45GHz, and introducing a working gas II into the microwave control power supply: n is a radical of2、H2Mixed gas (nitrogen) with water vaporThe mass ratio of gas, hydrogen and water vapor is 80% to 10%), then remote plasma is generated in the remote plasma generating chamber, the remote plasma enters the vacuum reaction main degumming chamber through a pipeline, the length of the pipeline is 50cm, and the vacuum of the vacuum reaction main degumming chamber is maintained to be 10%-1Pa, adjusting the microwave power to be 30W, the gas flow to be 25SCCM and the photoresist removing time to be 6min to carry out remote plasma photoresist removing, and simultaneously paying attention to the photoresist removing end point monitoring of the radio frequency plasma photoresist removing machine;
in the two-step photoresist stripping process, introducing helium with purity of more than 5N into the vacuum reaction main photoresist stripping chamber as temperature control gas to control the temperature of the surface acoustic wave device substrate in the vacuum reaction main photoresist stripping chamber, wherein under the action of the temperature control gas, the temperature of the surface acoustic wave device substrate is controlled to be 60 ℃;
(3) filling N with the gas purity of more than 5N into the vacuum reaction main photoresist removing chamber2And opening the vacuum reaction main photoresist removing chamber to take out the surface acoustic wave device substrate when the pressure of the vacuum reaction main photoresist removing chamber reaches the atmospheric pressure, and finishing photoresist removing.
Example 3
A plasma photoresist removing method for a surface acoustic wave device comprises the following steps:
(1) placing the surface acoustic wave device substrate coated with positive photoresist between two electrodes in a vacuum reaction main photoresist removing chamber of a plasma photoresist remover, and vacuumizing to 10 DEG-4Pa, introducing working gas I: n is a radical of2、H2Mixed gas of nitrogen, hydrogen and water vapor (mass ratio of nitrogen to hydrogen to water vapor is 80%: 10%: 10%), and vacuum is made to 10%-2Pa, turning on a microwave control power supply of the vacuum reaction main degumming chamber until the electrode glows and generates plasma, wherein the electromagnetic wave frequency of the microwave control power supply is 2.45GHz, adjusting the microwave power of 60W, the gas flow of 20SCCM and the degumming time of 15min to carry out plasma degumming, and simultaneously, a monitoring part of the plasma degumming machine monitors the degumming end point; the remaining thickness of the photoresist on the surface of the acoustic surface wave device substrate coated with the positive photoresist after photoresist removal is about 100 angstroms;
(2) after the photoresist is removed in the step (1), closing the photoresistWorking gas I reaches the power of the main degumming chamber of vacuum reaction, then opens the microwave control power of the remote plasma generation chamber of the plasma degumming machine, the electromagnetic wave frequency of the microwave control power is 2.45GHz, and working gas II is introduced into the microwave control power: n is a radical of2-H2Mixed gas (the mass ratio of nitrogen to hydrogen is 90%: 10%), then remote plasma is generated in the remote plasma generating chamber, the remote plasma enters the main degumming chamber of the vacuum reaction through a pipeline, the length of the pipeline is 20cm, and the vacuum of the main degumming chamber of the vacuum reaction is maintained to be 10-2Under Pa, adjusting the microwave power of 40W, the gas flow of 20SCCM and the photoresist stripping time for 5min to carry out remote plasma photoresist stripping, and simultaneously monitoring the photoresist stripping end point by a monitoring part of the plasma photoresist stripping machine;
in the two-step photoresist stripping process, introducing helium with purity of more than 5N into the vacuum reaction main photoresist stripping chamber as temperature control gas to control the temperature of the surface acoustic wave device substrate in the vacuum reaction main photoresist stripping chamber, wherein under the action of the temperature control gas, the temperature of the surface acoustic wave device substrate is controlled to be 110 ℃;
(3) filling N with the gas purity of more than 5N into the vacuum reaction main photoresist removing chamber2And opening the vacuum reaction main photoresist removing chamber to take out the surface acoustic wave device substrate when the pressure of the vacuum reaction main photoresist removing chamber reaches the atmospheric pressure, and finishing photoresist removing.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112259474A (en) * | 2020-10-19 | 2021-01-22 | 上海华力集成电路制造有限公司 | Plasma source assembly for integrated circuit processing equipment |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
| CN113070288A (en) * | 2021-03-26 | 2021-07-06 | 中国计量大学 | Microwave plasma photoresist removing equipment |
| CN114496739A (en) * | 2021-12-06 | 2022-05-13 | 上海稷以科技有限公司 | Method for improving plasma erosion resistance of gallium nitride surface |
| CN114535218A (en) * | 2022-01-17 | 2022-05-27 | 东莞市安动半导体科技有限公司 | Full-automatic degumming machine |
| CN114660909A (en) * | 2022-03-25 | 2022-06-24 | 无锡邑文电子科技有限公司 | Photoresist removal method and remover |
| CN115373232A (en) * | 2022-10-24 | 2022-11-22 | 无锡邑文电子科技有限公司 | Wafer photoresist stripping equipment and method |
| CN115382856A (en) * | 2022-10-25 | 2022-11-25 | 江苏容正医药科技有限公司 | Plasma ultra-clean processing method, system, device and medium |
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2019
- 2019-12-27 CN CN201911381353.XA patent/CN111123665A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259474A (en) * | 2020-10-19 | 2021-01-22 | 上海华力集成电路制造有限公司 | Plasma source assembly for integrated circuit processing equipment |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
| CN113070288A (en) * | 2021-03-26 | 2021-07-06 | 中国计量大学 | Microwave plasma photoresist removing equipment |
| CN114496739A (en) * | 2021-12-06 | 2022-05-13 | 上海稷以科技有限公司 | Method for improving plasma erosion resistance of gallium nitride surface |
| CN114535218A (en) * | 2022-01-17 | 2022-05-27 | 东莞市安动半导体科技有限公司 | Full-automatic degumming machine |
| CN114660909A (en) * | 2022-03-25 | 2022-06-24 | 无锡邑文电子科技有限公司 | Photoresist removal method and remover |
| CN115373232A (en) * | 2022-10-24 | 2022-11-22 | 无锡邑文电子科技有限公司 | Wafer photoresist stripping equipment and method |
| CN115382856A (en) * | 2022-10-25 | 2022-11-25 | 江苏容正医药科技有限公司 | Plasma ultra-clean processing method, system, device and medium |
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