CN113070288A - Microwave plasma photoresist removing equipment - Google Patents
Microwave plasma photoresist removing equipment Download PDFInfo
- Publication number
- CN113070288A CN113070288A CN202110331633.0A CN202110331633A CN113070288A CN 113070288 A CN113070288 A CN 113070288A CN 202110331633 A CN202110331633 A CN 202110331633A CN 113070288 A CN113070288 A CN 113070288A
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- microwave
- flange
- main cavity
- cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses microwave plasma degumming equipment which comprises a microwave device, a degumming device, a rack, an air inlet flange, an air exhaust flange and a vacuum gauge, wherein the microwave device comprises a microwave module, a microwave shielding cover and a quartz cavity, the degumming device comprises a main cavity body, a switching device, a high-density metal net assembly, a heating plate and a cavity door, the cavity door is connected with the main cavity body through a hinge, the main cavity body is fixed on the rack, the microwave module is connected with the microwave shielding cover, the quartz cavity is positioned in the microwave shielding cover and is fixed on the upper surface of the main cavity body through a flange, the switching device is connected with the quartz cavity through a flange, the air inlet flange is positioned on the upper surface of the microwave shielding cover, and the air exhaust flange is positioned on the lower surface of the main cavity body. The method comprises the steps of placing a sample on a heating plate, closing a cavity door, vacuumizing, filling gas, performing microwave plasma degumming, adjusting the plasma intensity reaching the surface of the sample according to the glue amount of the sample, and achieving low damage and high degumming efficiency.
Description
Technical Field
The invention relates to the technical field of wafer photoresist removal, in particular to microwave plasma photoresist removal equipment.
Background
The preparation of the semiconductor device comprises the steps of film deposition, photoetching, etching and the like, wherein the photoresist is removed as an important step. The conventional chemical photoresist removing method has many disadvantages, such as waste liquid generation, environmental pollution, etc. The plasma photoresist removing is a dry photoresist removing method which can overcome the defects, and the principle of the plasma photoresist removing is as follows: the generated oxygen atoms in the plasma state react with the hydrocarbon substances in the photoresist to generate volatile gaseous substances, such as carbon dioxide and water, so that the purpose of removing the photoresist is achieved. The existing plasma photoresist removing equipment has the following problems: the plasma intensity is difficult to control effectively, which affects the photoresist stripping efficiency and can damage the wafer.
Disclosure of Invention
Aiming at the defects of the existing photoresist removing technology, the invention aims to provide a microwave plasma photoresist removing device, which solves the problem that the plasma intensity in the existing plasma photoresist removing device is difficult to control.
The object of the invention is achieved by:
the utility model provides a microwave plasma equipment of glue that removes, includes microwave device, the device of glue that removes, frame, the flange that admits air, the flange of bleeding, vacuometer, microwave device includes microwave module, microwave shield cover, quartz chamber, the device of glue that removes includes the main cavity body, switching device, high-density metal mesh composite member, heating plate, chamber door, and the chamber door passes through the hinge and links to each other with the main cavity body, and the main cavity body is fixed in the frame, and the microwave module links to each other with the microwave shield cover, and the quartz chamber is located the microwave shield cover, fixes at the main cavity body upper surface through the flange, and switching device passes through the flange with the quartz chamber and links to each other, and the flange that admits air is located the microwave shield cover upper surface.
Furthermore, the switching device is composed of a fixed cylinder and a movable cylinder, the movable cylinder is connected with the fixed cylinder through threads, and the distance between the movable cylinder and the heating plate can be adjusted through threads.
Furthermore, the height of the fixed cylinder is half of the distance between the upper inner surface of the main cavity and the upper surface of the heating plate, and the height of the movable cylinder is slightly smaller than that of the fixed cylinder, so that the adjusting position can be positioned.
Further, the high-density metal net assembly is composed of an annular pressing sleeve and a high-density metal net, so that the high-density metal net is convenient to mount and dismount.
Furthermore, the mounting lantern ring is fixed on the movable cylinder, the high-density metal net assembly is fixed on the mounting lantern ring through screws, and the high-density metal net can weaken the strength of the plasma, so that the damage of the plasma to the sample is reduced.
Furthermore, the heating plate is fixed at the bottom of the main cavity body, the annular resistance wire is arranged inside the heating plate and located outside the cavity, and the heating plate is externally connected with a power supply to work so as to uniformly heat the sample, and the plasma can be prevented from being polluted by an external heating mode.
Furthermore, even air discs are installed at the ports of the air inlet flange and the air exhaust flange, so that the air flow is kept even during air inflation and air exhaust.
Furthermore, the gas homogenizing disc is of a disc structure with small holes uniformly distributed, so that gas is introduced more uniformly.
Furthermore, the microwave module comprises a microwave power supply, a microwave waveguide and a resonant cavity, the microwave waveguide is connected with the microwave power supply and the resonant cavity, and the resonant cavity surrounds the quartz cavity to ensure that the microwave energy is guided into the quartz cavity.
Furthermore, a vacuum gauge is fixed on the air exhaust flange so as to measure the vacuum degree in the main cavity and further control the air exhaust pressure.
Furthermore, the air inlet flange is externally connected with a steel cylinder provided with oxygen, and the air exhaust flange is externally connected with a vacuum pump.
Compared with the prior art, the invention has the following beneficial effects: the microwave plasma photoresist removing equipment is simple and efficient, strong in operability, high in ionization degree of plasmas generated by microwaves, capable of effectively controlling the plasma intensity reaching the surface of a wafer through the switching device and the high-density metal net, capable of enabling the wafer to be heated uniformly through the annular resistance wire on the heating plate, capable of measuring the vacuum degree in the main cavity through the vacuum gauge and further controlling the air suction amount, and good in photoresist removing effect, and oxygen atoms generated by the microwaves react with hydrocarbon substances in photoresist to generate volatile substances.
Drawings
Fig. 1, 2 and 3 are overall structural views of the present invention;
FIG. 4 is a view of the structure of the adapter;
FIG. 5 is a diagram of a high density expanded metal assembly;
FIG. 6 is a view of the heating plate structure;
FIG. 7 is a view showing the structure of the gas uniformizing plate;
FIG. 8 is a diagram of a microwave module;
in the figure: 1. the microwave device comprises a microwave device, 11, a microwave module, 111, a microwave power supply, 112, a microwave waveguide, 113, a resonant cavity, 12, a microwave shielding cover, 13, a quartz cavity, 2, a degumming device, 21, a main cavity, 22, a switching device, 221, a fixed cylinder, 222, a movable cylinder, 23, a high-density metal mesh assembly, 231, an annular pressing sleeve, 232, a high-density metal mesh, 24, a heating plate, 241, an annular resistance wire, 25, a cavity door, 3, a frame, 4, an air inlet flange, 5, an air exhaust flange, 6, a vacuum gauge, 7, an installation lantern ring, 8, a cavity door handle, 9, an air homogenizing plate, 10 and screws.
Detailed Description
Embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
The invention discloses microwave plasma degumming equipment, which comprises a microwave device 1, a degumming device 2, a rack 3, an air inlet flange 4, an air exhaust flange 5 and a vacuum gauge 6, wherein the microwave device 1 comprises a microwave module 11, a microwave shielding cover 12 and a quartz cavity 13, the degumming device 2 comprises a main cavity 21, a switching device 22, a high-density metal net assembly 23, a heating plate 24 and a cavity door 25, the cavity door 25 is connected with the main cavity 21 through a hinge, the main cavity 21 is fixed on the rack 3, the microwave module 11 is connected with the microwave shielding cover 12, the quartz cavity 13 is positioned in the microwave shielding cover 12 and is fixed on the upper surface of the main cavity 21 through a flange, the switching device 22 is connected with the quartz cavity 13 through a flange, the air inlet flange 4 is positioned on the upper surface of the microwave shielding cover 12, and the air exhaust flange 5 is positioned on the lower surface of the main cavity 21.
The switching device 22 is composed of a fixed cylinder 221 and a movable cylinder 222, the movable cylinder 222 is connected with the fixed cylinder 221 through threads, and the distance between the movable cylinder 222 and the heating plate 23 can be adjusted through threads.
The height of the fixed cylinder 221 is half of the distance between the upper inner surface of the main cavity 21 and the upper surface of the heating plate 24, and the height of the movable cylinder 222 is slightly less than that of the fixed cylinder 221, so that the adjusting position can be positioned.
The high-density metal net assembly 23 is composed of an annular pressing sleeve 231 and a high-density metal net 232, so that the high-density metal net 232 can be conveniently installed and detached.
The mounting lantern ring 7 is fixed on the movable cylinder 222, the high-density metal net assembly 23 is fixed on the mounting lantern ring 7 through the screw 10, and the high-density metal net 232 can weaken the strength of the plasma, so that the damage of the plasma to a sample is reduced.
The heating plate 23 is fixed at the bottom of the main cavity 21, the annular resistance wire 241 is arranged in the heating plate 24, the annular resistance wire 241 is located outside the cavity, and the external power supply works so as to uniformly heat the sample, and the external heating mode can avoid pollution to plasma.
And the ports of the air inlet flange 4 and the air exhaust flange 5 are provided with air homogenizing discs 9 so as to keep the air flow uniform during air inflation and air exhaust.
The gas homogenizing disc 9 is a disc structure with small holes uniformly distributed, so that gas is introduced more uniformly.
The microwave module 11 includes a microwave power supply 111, a microwave waveguide 112 and a resonant cavity 113, the microwave waveguide 112 is connected to the microwave power supply 111 and the resonant cavity 113, and the resonant cavity 113 surrounds the quartz cavity 13 to ensure that the microwave energy is guided into the quartz cavity 13.
And a vacuum gauge 6 is fixed on the air exhaust flange 5 so as to measure the vacuum degree in the main cavity body 21 and further control the air exhaust pressure.
The air inlet flange 4 is externally connected with a steel cylinder provided with oxygen, and the air exhaust flange 5 is externally connected with a vacuum pump.
When a sample (wafer) is subjected to photoresist removal, the sample is placed on the heating plate 23, the distance between the movable cylinder 222 and the sample is adjusted to be proper by using threads, the cavity door 25 is closed by using the cavity door handle 8, the main cavity body 21 is sealed, the heating plate 24 is started, the sample is heated to be at a proper temperature, then the insides of the main cavity body 21 and the quartz cavity 13 are vacuumized by using a vacuum pump externally connected with the air exhaust flange 5, the microwave module 11 is started, oxygen is introduced into the quartz cavity 13 by using a steel cylinder externally connected with the air inlet flange 4, so that microwave plasma is generated, the adapter 22 conducts plasma, the plasma penetrates through the high-density metal mesh 232 and reaches the surface of the sample, the plasma reacts with photoresist on the sample, volatile substances are generated, and the photoresist is removed.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The utility model provides a microwave plasma equipment of glue that removes, includes microwave device, the device of glue that removes, frame, the flange that admits air, the flange of bleeding, vacuometer, microwave device includes microwave module, microwave shield cover, quartz chamber, the device of glue that removes includes the main cavity body, switching device, high-density metal mesh composite member, heating plate, chamber door, and the chamber door passes through the hinge and links to each other with the main cavity body, and the main cavity body is fixed in the frame, and the microwave module links to each other with the microwave shield cover, and the quartz chamber is located the microwave shield cover, fixes at the main cavity body upper surface through the flange, and switching device passes through the flange with the quartz chamber and links to each other, and the flange that admits air is located the microwave shield cover upper surface.
2. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the switching device is composed of a fixed cylinder and a movable cylinder, and the movable cylinder is connected with the fixed cylinder through threads.
3. A microwave plasma photoresist stripping apparatus according to claim 2, wherein: the height of the fixed cylinder is half of the distance between the upper inner surface of the main cavity and the upper surface of the heating plate, and the height of the movable cylinder is slightly smaller than that of the fixed cylinder.
4. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the high-density metal net assembly consists of an annular pressing sleeve and a high-density metal net.
5. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the mounting lantern ring is fixed on a movable cylinder, and the high-density metal net assembly is fixed on the mounting lantern ring through screws.
6. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the heating plate is fixed in main cavity body bottom, and annular resistance wire is equipped with inside the heating plate, and annular resistance wire is located the cavity outside, and external power source works.
7. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the ports of the air inlet flange and the air exhaust flange are both provided with air homogenizing discs.
8. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the gas homogenizing disc is a disc structure with small holes uniformly distributed.
9. A microwave plasma photoresist stripping apparatus according to claim 1, wherein: the microwave module comprises a microwave power supply, a microwave waveguide and a resonant cavity, wherein the microwave waveguide is connected with the microwave power supply and the resonant cavity, and the resonant cavity surrounds a quartz cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331633.0A CN113070288B (en) | 2021-03-26 | 2021-03-26 | Microwave plasma equipment of removing glue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331633.0A CN113070288B (en) | 2021-03-26 | 2021-03-26 | Microwave plasma equipment of removing glue |
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| CN113070288A true CN113070288A (en) | 2021-07-06 |
| CN113070288B CN113070288B (en) | 2022-11-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114618852A (en) * | 2022-05-17 | 2022-06-14 | 江苏浦贝智能科技有限公司 | Glue removing machine and glue removing method for semiconductor processing |
| CN116550689A (en) * | 2023-04-27 | 2023-08-08 | 东莞市晟鼎精密仪器有限公司 | Process for removing silicon nitride coating of graphite boat by dry method |
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2021
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| CN201285757Y (en) * | 2008-10-28 | 2009-08-05 | 富临科技工程股份有限公司 | Integration type plasma treatment mechanism |
| CN203174200U (en) * | 2013-04-03 | 2013-09-04 | 王东君 | Plasma enhanced atomic layer deposition equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114618852A (en) * | 2022-05-17 | 2022-06-14 | 江苏浦贝智能科技有限公司 | Glue removing machine and glue removing method for semiconductor processing |
| CN116550689A (en) * | 2023-04-27 | 2023-08-08 | 东莞市晟鼎精密仪器有限公司 | Process for removing silicon nitride coating of graphite boat by dry method |
| CN116550689B (en) * | 2023-04-27 | 2024-02-09 | 东莞市晟鼎精密仪器有限公司 | Process for removing silicon nitride coating of graphite boat by dry method |
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| CN113070288B (en) | 2022-11-22 |
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