JPS6075327A - Ultraviolet ray generating device and material treating device using it - Google Patents

Abstract

PURPOSE:To make wavelength of generated ultraviolet rays variable and to enable generation of ultraviolet rays having plural ranges of wavelength in an ultraviolet rays generating device impressing high frequency electromagnetic field to a gas discharge chamber by constituting the gas discharge chamber to be operable using variable kinds of gas and variable pressure. CONSTITUTION:In the process for washing glass provided with a transparent conductive film as a material for prepg. a liquid crystal display panel, an object to be treated 19 is set in a treating chamber 9 for the purpose of removing inorg. impurities, and the chamber 9 is evacuated by a second evacuating device 15. Then, a second high frequency coil 17 and a controlling power source 8 are operated while flowing gaseous N2 or Ar from a second gas feeding source 12; and high frequency electromagnetic wave is applied to the chamber 9. Then, the chamber 9 is evacuated leaving the object 19 to be treated as it is when org. impurities are removed, and O2 is introduced from the source 12. On the other hand, after evacuating the gas discharge chamber 1 with a first evacuating device 5, H2 is introduced from a first gas feeding source 3 to adjust the pressure in the chamber to a specified pressure and gas discharge is generated by operating a first high frequency coil 7 and a power source 8. Generated ultraviolet rays are irradiated on the object 19 to be treated through a window member 11.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an ultraviolet generator and a material processing apparatus that performs material processing such as cleaning and dry etching using the ultraviolet generator.

[Technical background of the invention and its problems] In recent years, the fields in which ultraviolet rays are used have been increasing. For example, ozone is generated by irradiating an enzyme with ultraviolet rays, and this ozone's oxidizing action is used for discharge cleaning to remove contaminants (mainly carbohydrates) attached to the surface of materials, or irradiating organic adhesives with ultraviolet rays. Ultraviolet rays are used for dry etching of the semiconductor wafer 1 to resist thin film, etc., to harden the adhesive.

However, the main source of ultraviolet light is a mercury lamp,
Recently, a method for extracting ultraviolet light by applying a high-frequency electromagnetic field to an electrodeless bulb to generate a gas discharge has also been put into practical use.

However, in the case of mercury lamps and lightningless lightning, the wavelength of the ultraviolet light emitted was fixed and could not be changed. Therefore, when performing monthly processing using these ultraviolet ray generation sources, for example when cleaning and etching a single moon Fl, or when irradiating components made of multiple materials with ultraviolet rays of different wavelengths. (In cases where continuous processing is required, a single material processing device has the disadvantage that continuous processing is impossible, or even if it is possible, it is extremely inefficient.

[Object of the Invention] The present invention has been made in view of the problems mentioned above, and an object of the present invention is to provide an ultraviolet generator that can change the wavelength of the ultraviolet rays it generates and can simultaneously generate ultraviolet rays of a plurality of wavelengths. Another object of the present invention is to provide a material processing device that can efficiently process materials using this ultraviolet ray generator.

[Summary of the Invention 1 In order to achieve the above object, the ultraviolet ray generator of the present invention has the following features:
In a device that applies a high-frequency electromagnetic field from the outside to a gas discharge chamber filled with a discharge electric material to generate a gas discharge and radiate ultraviolet rays, a gas supply source and a u+ gas device are used so that the type and pressure of the gas can be changed. This is done in such a way that ultraviolet rays of different wavelengths can be obtained by changing the discharge state.

In addition, the material processing apparatus of the present invention applies a second gas supply source, a second exhaust device, and a high-frequency electromagnetic field to the processing chamber to process the material using such an ultraviolet generator. A second electromagnetic wave application device that generates discharge is provided, and it is an efficient material treatment that can perform plasma treatment at the same time as ultraviolet treatment.

[Embodiment of the Invention] An embodiment of the present invention will be explained in detail with reference to the drawings, and a discharge electric body will be supplied to the discharge chamber 1. A gas supply source 3, such as a gas cylinder, is connected in an airtight manner. Further, a discharge body is discharged from the gas tIi electrode 1 into the gas discharge chamber 1 via a valve 4. For example, an evacuation device 5 of a vacuum pump is provided. Also, 6 is pressure cutting. Further, a first high-frequency electromagnetic wave application device consisting of a first high-frequency coil 7 is installed around the gas discharge chamber 1 so that the gas in the discharge chamber 1 causes discharge, and 8 is a control power source for the first high-frequency electromagnetic wave applying device. be.

On the other hand, a processing chamber 9 for performing monthly interest processing is connected to the discharge chamber 1, and a container forming the discharge chamber 1 is connected to the container forming the processing chamber 9 via an O-ring 10. Discharge chamber 1
An ultraviolet transmitting window is provided on the partition wall between the processing chamber 90 and the processing chamber 90 to guide the ultraviolet rays generated in the discharge v1 to the processing chamber 9, and the window is airtight not only with the window member 11 but also with each other. It is maintained.

A second gas supply source 12 is provided in the 7C processing chamber 9 via a valve 13 for supplying inert gas and other gases required during material processing, such as oxygen in the case of cleaning with ozone. There is. A second exhaust device 15 is provided around the processing chamber 9 to exhaust gas from the processing chamber 9 via a valve 14, and 16 is a pressure system. Further, a first high-frequency coil 17 consisting of a second electromagnetic wave application device that applies high-frequency electromagnetic waves into the processing chamber is provided around the processing chamber 9, and is controlled in the same manner as the first high-frequency coil 7. This is done by a power source 8. Furthermore, processing chamber 9
A mounting table 18 is provided inside, and a workpiece 19 is placed on the mounting table 18.

A case in which the above-described ultraviolet generator and material processing apparatus using the same are applied to, for example, manufacturing a liquid crystal display panel will be described below. The manufacturing process of the liquid crystal display panel includes the process of cleaning the transparent glass used as the material, the first step of pattern exposure, the etching process, the process of curing the adhesive, etc. In the cleaning step, which includes various steps to which the processing apparatus can be applied, first, the object to be processed 19 is placed on the mounting table 1 in the processing chamber 9 in order to remove inorganic substances.
8, the second high-frequency coil 17 and the series control power source 8 are operated while the second exhaust device 15 is operated to flow Palargon, and high-frequency electromagnetic waves are applied to the inside of the processing chamber 9. Here, the pressure within the processing chamber 1 is maintained at several 1.-bar. This high-frequency electromagnetic wave causes the surface of the workpiece 19 to be polished (
The impurities contained in J@ are driven out by argon and nitrogen in a plasma state. It is then necessary to remove organic impurities.

At this time, first, the object to be processed 19 is placed on the mounting 18 (11 air is continued), and the valve 14 is closed and the valve 13 is closed when the pressure inside the processing chamber 9 reaches approximately 10-4 Torr. It is opened to introduce oxygen from the second gas supply source 12 into the processing chamber 9.Meanwhile, the first exhaust device 5 is operated to open the valve 4 and exhaust the inside of the gas discharge chamber 1. When the inside of the discharge chamber 1 reaches about 10-' Torr, the valve 4 is closed, and then the valve 2 is opened to introduce hydrogen from the gas supply source 3 into the gas discharge chamber 1. When the hydrogen pressure is set to several Torr, the first high-frequency coil 7 and the control 60 electric current 8!8 are operated, and the high-frequency electromagnetic waves are irradiated onto one object to be treated through the window member 11, and the surface of the object 19 is irradiated. The organic impurities attached to the water are decomposed into ions, etc. On the other hand, the ultraviolet rays decompose oxygen molecules into oxygen atoms,
This oxygen atom reacts with the decomposed organic matter, and these eventually form simple molecules such as CO2, H2O, N, 02, etc., and the surface of the object to be treated 19 is cleanly cleaned.

As described above, according to the material processing equipment of the present invention, since there is no way to remove inorganic impurities and organic impurities, the object to be treated is passed between the inorganic impurity removing device and the organic impurity removing device. No further impurities are attached during the movement, and there is no need for a device for isolating from the atmosphere to prevent impurities from adhering during this time.

Further, in the above embodiment; J3, the window member 11 uses l-, iF, and MgF2, each of which has a thickness of 105 nm.
, it transmits ultraviolet rays with wavelengths up to 115 nm, so 184 nm, which transmits through quartz like conventional mercury lamps, etc.
The irradiation energy of ultraviolet rays is higher than that of ultraviolet rays with wavelengths of m or more, so the cleaning process described above can be performed efficiently, and the power consumption can be lower than that of mercury lamp systems.

Furthermore, in the above embodiment, gas discharge is generated by introducing hydrogen into the gas discharge chamber 1, but xenon, krypton, etc. may also be used. The spectra of the ultraviolet rays produced differ. For example, if 14 people are filled with mercury and an inert gas in the gas discharge chamber 1 and generate a gas discharge using the same gas composition and pressure as a mercury lamp, the generated ultraviolet rays will mainly be 254 nm and 185 nm.

There are various advantages if the wavelength of the ultraviolet rays generated in this way is variable. For example, when processing a workpiece made of several types of materials, by selecting the wavelength appropriately,
When direct photolysis is used to select the material to be treated, the wavelength of ultraviolet rays can be appropriately selected (the impurities mentioned above can be selectively removed).

[Effects of the Invention] According to the ultraviolet ray generator of the present invention, since the gas components in the gas discharge chamber and the gas filling pressure can be made variable, the wavelength of the generated ultraviolet rays can be made variable. Further, according to the material processing apparatus of the present invention, it is possible to process various materials with one apparatus, and work efficiency can be improved.

[Brief explanation of the drawing]

The drawing shows how this material can be processed using the ultraviolet ray generator of the present invention! ! It is a block diagram of a device. 1... Material processing chamber 3... First gas supply source 5...
・First antagonist 7...First high frequency coil 8...
・Control power source 9...Processing unit 11...Window member 12・
...Second gas supply source 15...Second exhaust device 17
...Second high frequency coil

Claims (2)

[Claims] (1) an airtight gas discharge chamber; a gas supply source that supplies a discharged electric body to the gas discharge chamber; an exhaust device that exhausts the discharged electric body from the gas discharge chamber; and a high-frequency electromagnetic wave that applies high-frequency electromagnetic waves to the gas in the gas discharge chamber. Electromagnetic wave application that generates gas discharge 4! i
An ultraviolet generator comprising an iM and an ultraviolet transmitting window for extracting ultraviolet rays from the gas discharge chamber to the outside. (2) The ultraviolet ray generator according to claim 1, wherein the ultraviolet ray transmitting window is made of alkali halide. (3) An airtight gas discharge chamber and the gas discharge chamber. a first gas supply source that supplies a discharge body to the gas discharge chamber; a first exhaust device that discharges the discharge body from the gas discharge chamber; a first electromagnetic wave application device, a processing chamber having an air structure with respect to the outside and the gas discharge chamber, and introducing ultraviolet rays generated in the gas discharge chamber through an ultraviolet transmission window; An ultraviolet treatment device comprising: a second gas supply source, a second exhaust device, and a second electromagnetic wave application device that applies high-frequency electromagnetic waves to the processing chamber to generate a gas discharge.