JP2002083803A - Dry processing device such as etching device and ashing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dry processing device which is small in storage of charge and at the same time fast in reaction speed, and is suitable for etching and ashing treatment, or the like. SOLUTION: This dry processing device has a light excitation section 3 for irradiating light with appropriate wavelength in the middle of a gas supply path 2 interlocked to a pressure-reduced treatment chamber 1 for introducing an appropriate gas into the gas supply path 2, thus generating a desired radical at the light excitation section 3. The radical obtained in this manner is supplied onto the surface of an object 6 to be treated, thus speedily achieving desired reaction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry processing apparatus such as an etching apparatus or an ashing apparatus used in a manufacturing process of a semiconductor device, a liquid crystal display or the like or in any other fine processing steps.

[0002]

2. Description of the Related Art Dry etching apparatuses utilizing plasma excited by RF to microwaves are widely used in etching and ashing processes in conventional manufacturing processes for semiconductor devices and liquid crystal displays.

In the treatment of organic substances such as resists, a dry processing apparatus utilizing a photochemical reaction is also used. For example, in an ashing apparatus using ozone, ozone is generated by irradiating an oxygen gas with ultraviolet rays under substantially atmospheric pressure, and an organic substance is oxidized and decomposed by ozone and by atomic oxygen radicals photodissociated from ozone. Method is used. Here, it should be noted that in the ozone ashing apparatus, the oxidative decomposition of organic substances by ozone is carried out in a reaction chamber at almost atmospheric pressure. Ashing using such ozone,
This is a process that does not involve charged particles, and does not cause damage due to charge-up.

[0004]

In dry processing using discharge plasma, since an object to be processed is exposed to an atmosphere containing charged particles, damage problems such as device damage due to charge-up may occur. is there. In particular, as circuit miniaturization progresses, this problem of charge-up has become increasingly serious.

[0005] The processing speed is determined by the type of reactive species generated by the plasma and the generation speed. In a plasma atmosphere, various atoms and molecules having a large number of energy states are generated by excitation. Therefore, it is difficult to control a reactive species or a reaction product that determines a desired reaction.

On the other hand, in an ozone ashing apparatus,
Although the damage problem as described above can be overcome, the processing speed is typically about 1 to 2 μm / min. Such a processing speed is slower than a processing method using plasma which is widely used. Further, the ozone ashing apparatus has a problem that it has little effect on the ashing treatment of inorganic substances.

[0007] The present invention has been made in view of the above circumstances, and an object of the present invention is to significantly reduce the amount of electric charge accumulated in an object to be processed, thereby suppressing damage due to charge-up. Another object of the present invention is to provide a dry processing apparatus capable of performing high-speed processing by generating necessary reactive species with high efficiency.

[0008]

The object of the present invention is to reduce the pressure of a processing chamber for introducing an object to be processed, and to excite a gas corresponding to a reactive species desired to be generated with light having an appropriate wavelength with respect to the gas. Thus, a desired reactive species is generated, and this reactive species is achieved by supplying the reactive species to the surface of the object to be processed in the processing chamber.

Further, it is preferable that a light irradiation mechanism for irradiating light is arranged so as to directly act on the gas without an air layer interposed therebetween. Is suppressed, and the gas excitation efficiency by the irradiation light increases.

In addition, it is preferable to provide a shielding member for preventing the irradiation light from directly reaching the surface of the object to be treated. Is prevented.

The operation and principle of operation of the present invention will be described below.

In a plasma excited by RF to microwave widely used in a normal dry processing apparatus, various energy states such as atomic radicals and molecular radicals, reactive molecules, charged particles such as ions and electrons, and the like are generated. An atmosphere containing various kinds of particles is formed. Therefore, it is difficult to control the reaction species and reaction product species that control the desired reaction.

On the other hand, in a photochemical reaction, a specific excitation state or ionization is selected by selecting a specific wavelength corresponding to a vibration mode or rotation mode inherent to a molecule, or corresponding to an optical transition of electrons. A state can be selectively obtained, which can selectively promote a desired specific reaction such as dissociation or binding of a molecule.

Therefore, by appropriately selecting the combination of the gas species and the wavelength of the irradiation light, it is possible to efficiently generate only the reactive species that plays a major role in the desired etching or ashing.

In this case, unlike in a plasma atmosphere containing particles in various states, the generation of other excited species (scavengers) that captures main reactive species is suppressed. As a result, there is an effect that the processing speed is improved.

Further, in a certain kind of etching, a reaction product generated by a reaction between an object to be processed and a reactive species does not form a gas phase at normal temperature and normal pressure. In such a case,
Since it is difficult to remove the reaction product, it is impossible to continue the etching process. However, under reduced pressure,
Such reaction products can be in the gas phase. Therefore, in the present invention, since the pressure in the processing chamber is reduced, it is possible to perform an etching process on an object to be processed, which is practically impossible with a conventional ozone ashing apparatus under normal pressure. is there.

Therefore, by exciting the gas with light to generate excited species and supplying the excited species to the surface of the processing object in the processing chamber under reduced pressure, high-speed etching can be performed with little charge accumulation in the processing object. And the intended purpose is achieved.

As for the ashing treatment of an organic substance such as a photoresist using oxygen plasma, the ashing speed can be improved by mixing an appropriate amount of N ₂ gas, H ₂ gas or H ₂ O gas with oxygen gas. (For example, Japanese Patent Application Laid-Open Nos. 1-112734 and 2-771).
No. 25). It is speculated that this may be based on the action of lowering the activation energy by radicals such as H radicals and OH radicals, and the action of increasing the concentration of atomic oxygen. On the other hand, by studying the elementary process of etching and removing organic substances by oxygen, OH radicals are generated from oxygen and organic substances in the initial stage,
Since the reaction rate of OH radicals with organic substances is high, it has been proposed that etching by OH radicals determines the reaction rate in the presence of OH radicals (J. Ele
ctrochem. Soc., 136, No. 5, 1426 (1989)).

However, in the prior art, O ₂
The only approach has been to generate OH radicals by exciting a mixed gas of gas and H ₂ O gas by plasma. In this case, a large number of other radicals and ionic species having various energy levels are generated at the same time, and as a result, the concentration of the OH radical becomes low, so that only the reactivity of the OH radical is selectively obtained. Can not.

On the other hand, according to the present invention, when an OH radical is generated by a photochemical reaction when ashing an organic substance, the generation of other radicals and ionic species can be suppressed, and the OH radical can be suppressed.
Radicals can be generated selectively and in high concentrations,
It was created based on the idea that the reactivity of OH radicals during ashing can be selectively used.

Regarding the photochemical generation of the OH radical,
There are several principles.

[First principle] When H ₂ O is decomposed with light having a wavelength shorter than 135.6 nm, the energy becomes H ₂ O + h
The reaction process of ν → OH + H becomes possible, for example,
OH in an excited state by photolysis using a Kr resonance line (123.6 nm) or Lyman α ray of hydrogen (121.6 nm).
(A ² Σ ⁺ ) can be generated (New Laboratory Chemistry, Vol. 16, Reaction and Rate, p. 453, edited by The Chemical Society of Japan).

It has been reported that photolysis using light having a wavelength in the range of 147 to 185 nm can generate ground state OH (X ² Π). Therefore, the H ₂ O gas can be excited by ultraviolet light (120 to 190 nm) to obtain OH radicals. This is the first of OH radical generation.
It is a principle.

[Second principle] On the other hand, H ₂ O is from 2.6 to
It exhibits strong infrared absorption characteristics with respect to light of 3.5 μm. In particular, it shows a strong absorption peak near 2.7 μm, corresponding to the stretching vibration type of H ₂ O molecule. Further, it exhibits an infrared absorption characteristic of 6.27 μm corresponding to the bending vibration type of H ₂ O molecule.
Therefore, a process may occur in which H ₂ O molecules are irradiated with infrared light in the 2.6 to 6.3 μm band to cause strong vibrational excitation, thereby promoting spontaneous dissociation and generating OH radicals. This reaction process is the second generation of OH radical generation.
It is a principle. The use of vibrational and rotational excitation of H ₂ O for generation of OH radicals has not been proposed before but is an idea unique to the present application.

[Third Principle] Even when spontaneous dissociation does not occur due to excitation by infrared light (the second principle), it should be combined with electronic excitation by ultraviolet light (the first principle). Can induce the dissociation more efficiently. The third principle of OH radical generation is to use the photoexcitation by ultraviolet light and the photoexcitation by infrared light in combination. This third principle is also based on an idea unique to the present application in that the vibration and rotation excitation of H ₂ O is used for generation of OH radicals.

[Fourth Principle] The reaction between hydrogen and oxygen, which generate OH + H radicals, is caused by the reaction between electronically excited O ( ¹ D) and ground state H ₂ (X ¹ Σ ⁺ _g ). There have been reports of collisions (Chemical Physics, vol. 96,
381 (1985)). Therefore, to selectively produce an oxygen atom in an excited state by photochemical reaction of oxygen gas O ⁽¹ D), also by introducing hydrogen gas into the excited oxygen atom atmosphere, the ground state OH (X ² Π) Can be selectively generated.

In the photolysis reaction of oxygen gas,
When the oxygen molecules in the ground state absorbs light of a wavelength of 130～175Nm, dissociate into excited state oxygen atoms O and ⁽¹ D) and the oxygen atom in the ground state O ⁽³ P). That is, O ₂ (X ³ Σ ^- _g ) + hν (130 to 175 nm) → O ( ¹
The reaction D) + O ( ³ P) occurs.

On the other hand, it is known that dissociation is also caused by light absorption at a wavelength of 175 nm or more, but oxygen atoms O ( ¹ D) in the excited state are not generated, and two oxygen atoms O ( ^{1 in} the ground state are generated. ³ Dissociate into P). That is, O ₂ (X ³ Σ ^- _g ) + hν (175 to 242 nm) → O ( ³
The reaction P) + O ( ³ P) occurs.

Therefore, a dissociation reaction using light having a wavelength of 130 to 175 nm is effective in selectively generating oxygen atoms O ( ¹ D) in an excited state which is important in a reaction process for generating OH radicals. It is.

Therefore, in the ashing treatment of the organic substance, radicals such as OH radicals (radicals according to the first principle) obtained by exciting the H ₂ O gas with ultraviolet light (120 to 190 nm) are supplied to the surface of the object to be treated. Alternatively, the H ₂ O gas is converted to infrared light (2.6 to 6.3 μm).
m) by supplying radicals such as OH radicals (radicals according to the second principle) obtained by excitation to the surface of the object to be treated, or by supplying H ₂ O gas with light (120 to
A radical (radical according to the third principle) such as an OH radical obtained by excitation at 190 nm and 2.6 to 6.3 μm is supplied to the surface of the object to be treated, or O ₂ gas is irradiated with light ( 130 to 175 nm), and a radical such as an OH radical (radical according to the fourth principle) obtained by mixing a ground-state hydrogen gas into an excited oxygen atom atmosphere obtained by excitation at 130 to 175 nm is supplied to the surface of the processing object. A high-speed reaction can be obtained without accumulating charges on the surface of the object.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a dry processing apparatus such as an etching apparatus and an ashing apparatus according to the present invention will be described below with reference to the drawings.

[First Embodiment] FIG. 1 shows a first embodiment of a dry processing apparatus according to the present invention. In the figure, the dry processing apparatus includes a processing chamber 1 which is brought into a reduced pressure state by evacuation, A gas supply path 2.

A light excitation section (light irradiation mechanism) 3 is provided in the gas supply path 2. The gas introduced into the photo-excitation unit 3 has a first wavelength region (1
20 to 190 nm) and the second wavelength region (2.6 to 6.
3 μm), which is excited by the light, passes through the gas supply path 2, and is placed on the mounting table 5 from the gas supply port 4.
Supplied to That is, in the first embodiment,
The above third principle is the operating principle.

Although not shown, as is apparent to those skilled in the art, a vacuum pump and a variable conductance valve are connected to the exhaust path 7 provided below the processing chamber 1. 1 is maintained in a predetermined reduced pressure state.

Next, the details of the light excitation section 3 will be described with reference to FIG. 2. One surface (the upper surface in the illustrated example) of a rectangular container 8 made of a material such as aluminum is provided with LiF.
An optical crystal window 9 made of a material having good light transmission characteristics in a vacuum ultraviolet region, such as MgF ₂ , MgF _2, or CaF ₂ , is attached so as to replace a part of the wall of the rectangular container 8. I have. Light of the first wavelength region (120 to 190 nm) is emitted from the first light source 10 through the window 9. The first light source 10 is, for example, a vacuum ultraviolet light source such as an Ar or Xe excimer lamp, a deuterium lamp, or a mercury lamp. It is preferable that the first light source 10 be in close contact with the window 9 so that no air layer is interposed between the first light source 10 and the window 9. Further, the area around the first light source 10 is several to several tens of Torr.
With a moderately reduced pressure atmosphere, even if there is a gap between the first light source 10 and the window 9 or a gap is provided (for the purpose of heat radiation), irradiation loss to the gas is suppressed. can do.

It is effective to provide a highly reflective reflecting mirror 10a behind the first light source 10 to improve the irradiation efficiency.

Further, instead of attaching the first light source 10 to the window 9, the first light source 10 corresponds to the above-mentioned ultraviolet light wavelength region (120 to 190 nm) such as resonance line light such as Xe or Kr obtained by microwave cavity discharge or the like. The same effect can be obtained by a configuration in which plasma discharge light that emits vacuum ultraviolet light is guided to the window 9.

Further, inside the rectangular container 8, the second light source 1 for irradiating light in the second wavelength range (2.6 to 6.3 μm) is provided.
1 is installed. As the second light source 11, an infrared lamp or the like having good radiation characteristics in the near infrared region to the far infrared region is used.

In this embodiment, the rectangular container 8 is used. However, a cylindrical container or a container having another appropriate shape can be used in the same manner. Further, the light sources 10, 1
The number of 1 is not limited to one each, and a plurality may be provided.

In addition, instead of the light pumping unit 3 shown in FIG. 2, the light pumping unit includes a first wavelength region (120 to
190 nm) and the second wavelength region (2.6 to
6.3 μm) may be individually and sequentially performed.

As shown in FIG. 3, after the light irradiation in the second wavelength region (2.6 to 6.3 μm) is performed, the first
Instead of performing the light irradiation in the wavelength region (120 to 190 nm), the light irradiation in the first wavelength region (120 to 190 nm) is performed first, and then the light is irradiated in the second wavelength region (2.6 to 6. nm).
(3 μm).

Using the dry processing apparatus according to the present embodiment, gas: H ₂ O, gas flow rate: 1000 sc
cm (flow rate of 1000 cc per minute in standard condition conversion), processing chamber pressure: 133 Pa, mounting table temperature: 250
° C, the removal rate of the photoresist applied to the entire surface of the silicon wafer having a diameter of 100 mm was 3 per minute.
A result of μm was obtained. In addition, the charge amount Q _OX of the silicon wafer with the oxide film measured before and after the treatment was not changed at about 3 × 10 ¹¹ q / cm ² , and the treatment with less charge accumulation was achieved.

[0043] In this first embodiment, as the gas, but using H ₂ O gas, for example, as such a mixture gas of mixed the H ₂ O gas and O ₂ gas at an arbitrary ratio, H ₂ A mixed gas containing O 2 gas at an arbitrary ratio can be used.

[Second Embodiment] FIG. 4 shows a dry processing apparatus according to a second embodiment of the present invention. In FIG. 4, the dry processing apparatus includes a processing chamber 1 which is brought into a reduced pressure state by evacuation, A gas supply path 2. The second embodiment also uses the third principle as an operating principle.

In the second embodiment, an optical crystal window 9 is mounted on the upper surface of the processing chamber 1 in the same manner as described above. Then, in the same manner as the first embodiment, the first
A first light source 10 that emits light in a wavelength region (120 to 190 nm) is attached to the window 9.

Further, a second light source 11 for irradiating light in a second wavelength region (2.6 to 6.3 μm) is provided inside the processing chamber 1. Providing a highly reflective reflecting mirror 11a on the back side of the second light source 11 is effective for improving the irradiation efficiency.

Further, a shielding member 12 is provided between the first light source 10 and the object 6 for the purpose of preventing irradiation damage to the object 6 due to ultraviolet light from the first light source 10.

As shown in the side view of FIG. 5 (a), the shielding member 12 is made of an optically opaque material, and two perforated shielding plates 13, 14 are vertically arranged. Is configured. In this case, the shielding plates 13, 1
As shown in the plan view of FIG. 5B, the holes 4 are arranged in a positional relationship such that the positions of the holes 13a and 14a are shifted from each other in plan view.

The number, material, thickness, hole diameter and the like of the shielding plates can be arbitrarily set as long as the holes of the shielding plates do not overlap in plan view. The shape of the hole is not limited to a circle, but may be any other shape such as a slit or a rectangle. For example, the shielding plate is 2
It is made of an aluminum plate and has a thickness of 2 mm
And a circular hole having a diameter of 2 mm to 6 mm.

In the second embodiment, the same operation and effect as those in the first embodiment can be obtained.

[Third Embodiment] FIG. 6 shows a dry processing apparatus according to a third embodiment of the present invention. In FIG. 6, the dry processing apparatus includes a processing chamber 1 which is depressurized by evacuation, A gas supply path 2. The third embodiment uses the above fourth principle as an operation principle.

In the third embodiment, the light excitation unit 3
Is provided to the gas supply path 2 provided with_Two Gas
be introduced. In addition, other gas without an optical excitation unit
The gas supply path 2 ′ is connected to the processing chamber 1, and this gas
H with respect to the _Two Gas is introduced. Ma
In addition, by using the fourth principle as the operating principle,
Although not shown, the light excitation unit 3 has a third wavelength region (1
A third light source for irradiating light of 30 to 175 nm).
ing.

In the third embodiment, the light excitation unit 3
The O ₂ gas introduced into the inside is excited by light in the third wavelength region (130 to 175 nm) by the third light source,
Oxygen atom in excited state O ( ¹ D) and oxygen atom in ground state
O ( ³ P) is dissociated into O ( ³ P), and the thus generated oxygen atom O ( ¹ D) in the excited state is introduced into the processing chamber 1 in the ground state H introduced through the gas supply path 2 ′. ₂ (X ¹
Σ ⁺ _g ) to form ground state OH (X ²
Π) is selectively generated.

By supplying the OH radicals generated in this way to the surface of the workpiece 6, high-speed ashing is achieved.

For example, using the dry processing apparatus according to the third embodiment, gas: O ₂ (flow rate: 500 sccm), gas: H ₂ (flow rate: 500 sc)
cm), processing chamber pressure: 133 Pa, mounting table temperature: 250
° C, the removal rate of the photoresist applied to the entire surface of the silicon wafer having a diameter of 100 mm was 3 per minute.
A result of μm was obtained. In addition, the charge amount Q _OX of the silicon wafer with the oxide film measured before and after the treatment was not changed at about 3 × 10 ¹¹ q / cm ² , and the treatment with less charge accumulation was achieved.

In the above, the embodiment of the present invention has been described by taking an ashing process of an organic substance as an example. However, the present invention is not limited to this, and the present invention is not limited to this. It includes a dry processing apparatus for performing processing, ashing processing, deposition, surface modification, and surface cleaning. in this case,
The combination of the gas and the photoexcitation wavelength is not limited to the above example, but may be selected as a combination that can generate an appropriate radical or reactive species during a desired treatment.

[0057]

As described above, according to the dry processing apparatus of the present invention, it is possible to significantly reduce the amount of electric charge accumulated in the object to be processed, thereby suppressing damage caused by charge-up. In addition, high-speed processing can be performed by generating necessary reactive species with high efficiency.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing a first embodiment of a dry processing apparatus according to the present invention.

FIG. 2 is a cross-sectional view showing in detail a configuration of a light excitation unit in the dry processing apparatus of FIG.

FIG. 3 is a cross-sectional view illustrating a modification of the light excitation unit.

FIG. 4 is a sectional view schematically showing a dry processing apparatus according to a second embodiment of the present invention;

5A and 5B are diagrams showing in detail a configuration of a shielding member in the dry processing apparatus of FIG. 4, wherein FIG. 5A is a side view and FIG. 5B is a plan view.

FIG. 6 is a cross-sectional view schematically illustrating a dry processing apparatus according to a third embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 processing chamber 2 gas supply path 2 ′ other gas supply path 3 light excitation unit (light irradiation mechanism) 5 mounting table 6 object to be processed 9 optical crystal window 10 first light source (light source) 11 second light source (light source) 12 shielding member 13 Shield plate 13a hole 14 Shield plate 14a hole

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/205 H01L 21/302 H 21/027 21/30 572A (72) Inventor Shinya Ogawara Kunitachi, Tokyo 992 Yaho 992 Yashii Co., Ltd.National Manufacturing Co., Ltd. 5F045 BB16 DP02 EE08 EK18 EK19 5F046 MA11

Claims (17)

[Claims] A dry processing apparatus such as an etching apparatus or an ashing apparatus, comprising: a processing chamber for performing an etching process or an ashing process on an object to be processed; and a gas supply path connected to the processing chamber. The processing chamber is depressurized, and the gas supply path is provided with a light irradiation mechanism for irradiating light to a gas supplied through the gas supply path. Features dry processing equipment. 2. The dry processing apparatus according to claim 1, wherein the light irradiation mechanism includes a gas in the gas supply path without an air layer that may cause absorption or scattering of irradiation light. A dry processing apparatus characterized by being arranged such that irradiation light can directly reach a molecule. 3. The dry processing apparatus according to claim 2, wherein the light irradiation mechanism has a light source disposed inside the gas supply path or directly connected to a wall of the gas supply path. Or a dry processing apparatus, wherein the dry processing apparatus is disposed with a gap evacuated to a wall of the gas supply path. 4. The dry processing apparatus according to claim 1, wherein the object to be processed is an organic substance, and the supplied gas is H ₂ O gas or a gas containing H ₂ O. Dry processing equipment. 5. The dry processing apparatus according to claim 4, wherein the wavelength of the light irradiated by the light irradiation mechanism is 120 n.
a dry processing apparatus having a diameter of from m to 190 nm. 6. The dry processing apparatus according to claim 4, wherein the wavelength of light irradiated by the light irradiation mechanism is 2.6 μm.
m to 6.3 μm. 7. The dry processing apparatus according to claim 4, wherein the light irradiation mechanism simultaneously or individually separates light having a wavelength of 120 nm to 190 nm and light having a wavelength of 2.6 μm to 6.3 μm. Dry processing apparatus characterized by irradiating light. 8. The dry processing apparatus according to claim 1, wherein the object to be processed is an organic substance, and O ₂ gas is supplied through the gas supply path provided with the light irradiation mechanism. Irradiates the O ₂ gas with light having a wavelength of 130 nm to 175 nm, and another gas supply path connected to the processing chamber is provided, and H ₂ gas is supplied through the gas supply path. A dry processing device characterized by the following. 9. A dry processing apparatus such as an etching apparatus or an ashing apparatus, comprising: a processing chamber for performing an etching process or an ashing process on an object to be processed; and a gas supply path connected to the processing chamber. The processing chamber is depressurized, and the processing chamber is provided with a light irradiation mechanism for irradiating the gas supplied to the processing chamber through the gas supply path with light. A dry processing device characterized by the above-mentioned. 10. The dry processing apparatus according to claim 9, wherein the light irradiating mechanism irradiates gas molecules in the processing chamber without interposing an air layer which may cause absorption or scattering of irradiation light. A dry processing apparatus, which is arranged so that irradiation light can directly reach the apparatus. 11. The dry processing apparatus according to claim 10, wherein a light source of the light irradiation mechanism is disposed inside the processing chamber or is directly connected to a wall of the processing chamber. Alternatively, the dry processing apparatus is disposed with a gap evacuated to the wall of the processing chamber. 12. The dry processing apparatus according to claim 9, wherein the object to be processed is an organic substance, and the supplied gas is H ₂ O gas or a gas containing H ₂ O. Dry processing equipment. 13. The dry processing apparatus according to claim 12, wherein the light irradiation mechanism irradiates one or both of light having a wavelength of 120 nm to 190 nm and light having a wavelength of 2.6 μm to 6.3 μm. A dry processing device characterized by the above-mentioned. 14. The dry processing apparatus according to claim 9, further comprising a shielding member that prevents light irradiated by the light irradiation mechanism from being irradiated on a surface of the processing target. Features dry processing equipment. 15. The dry processing apparatus according to claim 14, wherein the shielding member includes at least two perforated shielding plates formed of an optically opaque material, and the shielding plates are mutually separated. A dry processing apparatus characterized in that holes are displaced from each other. 16. A dry processing apparatus for performing deposition, surface modification, or surface cleaning, wherein the dry processing apparatus has the same configuration as the dry processing apparatus according to claim 1. Description: Dry processing equipment. 17. An ashing device for performing an ashing process of an organic substance, wherein the ashing device has the same configuration as that of the dry processing device according to any one of claims 4 to 8, or 12 or 13, and generates OH. An ashing apparatus wherein an ashing process of an organic substance on a surface to be processed is performed by using a reactive species such as a radical.