JPS61114532A - Plasma treating device - Google Patents
Plasma treating deviceInfo
- Publication number
- JPS61114532A JPS61114532A JP23491784A JP23491784A JPS61114532A JP S61114532 A JPS61114532 A JP S61114532A JP 23491784 A JP23491784 A JP 23491784A JP 23491784 A JP23491784 A JP 23491784A JP S61114532 A JPS61114532 A JP S61114532A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- processing apparatus
- plasma processing
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000005469 synchrotron radiation Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 229910000000 metal hydroxide Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 25
- 238000010494 dissociation reaction Methods 0.000 abstract description 8
- 230000005593 dissociations Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 238000009832 plasma treatment Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、プラズマを用いた狭面処理技術に係シ、とく
に、ガスの解離度の尚いプラズマ生成に好適なプラズマ
処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a narrow surface processing technique using plasma, and particularly to a plasma processing apparatus suitable for generating plasma with a low degree of gas dissociation.
従来のプラズマ処理装置においては、特開昭５５−９０
２２８号公報に記載のように、流量制御したガスを特別
な処理を行なわないでプラズマ発生部に導入していた。In conventional plasma processing equipment,
As described in Japanese Patent No. 228, a gas whose flow rate was controlled was introduced into the plasma generating section without any special treatment.
このため、プラズマ密度。Because of this, the plasma density.
ガス解離度（分子ガスがその構成原子に分解する割合）
が低かった。Gas dissociation degree (rate at which a molecular gas decomposes into its constituent atoms)
was low.
なお、プラズマ中には特開昭５２−１２２２３６号公報
に記載のように長寿命の分解生成物が存在し、プラズマ
発生部と処理部を分離することによっても、プラズマ処
理が可能であったが、その処理効率は低かった。Note that plasma contains long-lived decomposition products as described in JP-A-52-122236, and plasma processing was also possible by separating the plasma generation section and processing section. , its processing efficiency was low.
本発明の目的は、ガスの解離度を増大させうる新規な構
成になるプラズマ処理装置を提供することにある。An object of the present invention is to provide a plasma processing apparatus having a novel configuration capable of increasing the degree of gas dissociation.
プラズマ処理を行なう場合、導入するガスをあらかじめ
励起、もしくは分解、もしくはイオン化すると、プラズ
マ発生部におけるガスの解離度が増大することを見い出
した。It has been found that when performing plasma treatment, if the introduced gas is excited, decomposed, or ionized in advance, the degree of dissociation of the gas in the plasma generation area increases.
以下、本発明の一実施例を第１図によシ説明する。第１
図は、真空容器１、排気口１０、高周波電極３および対
向電極２からなる高周波放電平行平板型プラズマエツチ
ング装置において、高周波電源（周波数１３．５６ＭＨ
ｚ ） ５からの高周波電力をインピーダンス整合回路
４を通し電極３に印加し、プラズマ９を発生せしめ、試
料８をエツチングする状態を示し、ガス尋人口６から供
給するガスを、前置放電部７においてプラズマ状態にす
ることを特徴とする。前置放電部７においては、１３．
５６ＭＨ２の高周波電力をインピーダンス整合回路を通
し、石英放電管の外側に設置した電極に供給し、プラズ
マを発生させた。An embodiment of the present invention will be explained below with reference to FIG. 1st
The figure shows a high-frequency discharge parallel plate plasma etching apparatus consisting of a vacuum vessel 1, an exhaust port 10, a high-frequency electrode 3, and a counter electrode 2.
z) 5 is applied to the electrode 3 through the impedance matching circuit 4 to generate plasma 9 and etch the sample 8. It is characterized by making it into a plasma state. In the predischarge section 7, 13.
High-frequency power of 56 MH2 was supplied to an electrode placed outside the quartz discharge tube through an impedance matching circuit to generate plasma.
８Ｆ・ガスを主放電ガスとして、電極３へ入力電力２０
０Ｗ印加し、ガス圧力を１０Ｐ３、ガス流量を４０ ｓ
ｅｃｍに保持し、前置放電部への印加電力を４０Ｗにし
た条件で、試料単結晶シリコンをエツチングした結果、
３６００人／ＴｒｕＩｔのエツチング速度を得た。処理
室のガス圧力、入力電力を一定とし、前置放電部の高周
波電力を変化させた結果シリコンエツチング速度が第２
図のように、印加電力増大とともに大きくなることがわ
かった。Input power 20 to electrode 3 using 8F gas as main discharge gas
Apply 0W, gas pressure 10P3, gas flow rate 40s
As a result of etching the sample single crystal silicon under the conditions that the power was maintained at ecm and the power applied to the predischarge section was 40W, the results were as follows.
An etching rate of 3600 persons/TruIt was obtained. By keeping the gas pressure and input power in the processing chamber constant and changing the high-frequency power in the pre-discharge section, the silicon etching rate reached the second level.
As shown in the figure, it was found that the value increases as the applied power increases.
前置放電部で放電しない従来のエツチングでは、３００
０人／駆であった。In conventional etching without discharging in the pre-discharge section, 300
There were 0 people/drive.
すカわち、前置放電部でプラズマ化することＫよシ従来
のエツチングよりも２０％以上のエッチるものとわかっ
た。前置放電部においてガスをプラズマ状態にする方法
は、ガス分解を促進し、プラズマを用いたエツチングの
高速化に有効である。In other words, it has been found that plasma formation in the pre-discharge section results in a 20% higher etching rate than conventional etching. The method of turning the gas into a plasma state in the pre-discharge section is effective for promoting gas decomposition and increasing the speed of etching using plasma.
前置放電部にマイクロ波電力（Ｚ４５ＧＨ２）を印加し
、マイクロ波プラズマを生成する方法は、高周波電力（
１１５６ＭＨ２）による放電よりも、エツチング速度の
向上に有効であった。The method for generating microwave plasma by applying microwave power (Z45GH2) to the predischarge section is to apply high frequency power (Z45GH2) to the predischarge section.
1156MH2) was more effective in improving the etching rate.
さらに、°フィクロ波エツチング装置においても前置放
電室においてガス放電を行なうことが、エツチング速度
の向上に有効であった。Furthermore, in the 5-wavelength etching apparatus, it was effective to perform gas discharge in the pre-discharge chamber to improve the etching speed.
第１図に示すエツチング装置の前置放電室に、ホトレジ
スト（ＡＺ１３５０Ｊ）を塗布した７リコ／ウエハーを
置き、４０Ｗの高周波電力を印加した。処理部の条件（
２００Ｗ、１０Ｐａ、４０ｓｃｃｍ ）一定にした場合
、シリコンエツチング速度は２５００人／顧と小さくな
った。その時の加工形状はサイドエツチングが０．１μ
ｍ以下と垂直形状に近くなった。サイドエツチング防止
効果は、前置放電室のホトレジストエツチング速度が１
０ｎｍ／Ｍ以上で効果的であることがわかった。Seven wafers coated with photoresist (AZ1350J) were placed in the pre-discharge chamber of the etching apparatus shown in FIG. 1, and a high frequency power of 40 W was applied. Processing unit conditions (
(200W, 10Pa, 40sccm), the silicon etching rate was as low as 2500 people/customer. At that time, the side etching was 0.1μ.
m or less, which is close to a vertical shape. The side etching prevention effect is achieved when the photoresist etching speed in the pre-discharge chamber is 1.
It was found that it is effective at 0 nm/M or more.
Ｃ，Ｈ，Ｏｒ主成分とする有機物を前置放電室に置き、
エツチング形状の変化を調べた結果、はとんど全ての場
合において、エツチング形状とエツチング速度の制御に
有効であることがわかった。An organic material mainly composed of C, H, Or is placed in a predischarge chamber,
As a result of investigating the change in etching shape, it was found that it is effective in controlling the etching shape and etching speed in almost all cases.
さらに、エツチング速度の制御には、前置放電室に酸化
物、水酸化物を置く方法も効果的であった。Furthermore, a method of placing oxides or hydroxides in the pre-discharge chamber was also effective in controlling the etching rate.
前置放電室でプラズマ生成せず、Ｘｅランプを第３図の
ように配置し、ガスを励起し、その後、ガスを第１図に
示す平行平行型プラズマエツチング装置に流しプラズマ
発生をおこない、ＳＦ６ガス２００Ｗ、１０ｐａ、４０
ｓｃｃｍの条件でシリコンエツチングを行なった結果、
３３００人と光を照射しない場合よりも１０％糧度エツ
チング速度が大きくなった。ＸｅランプをＡｒレーザに
変換し、同様の条件でエツチングすると、約１５％のエ
ツチング速度の向上があった。また、シンクロトロン放
射光によっても同等の結果を得た。すなわち、光照射は
光によるガスの励起や分解、イオン化によりガスの解離
度が大きくシ、エツチング速度を向上させることに結果
的であった。Without generating plasma in the pre-discharge chamber, Xe lamps are arranged as shown in Figure 3 to excite the gas, and then the gas is flowed into the parallel plasma etching device shown in Figure 1 to generate plasma. Gas 200W, 10pa, 40
As a result of silicon etching under sccm conditions,
With 3,300 people, the etching rate was 10% higher than when no light was irradiated. When the Xe lamp was replaced with an Ar laser and etching was performed under similar conditions, the etching speed was improved by about 15%. Similar results were also obtained using synchrotron radiation. That is, the light irradiation resulted in a large degree of dissociation of the gas due to the excitation, decomposition, and ionization of the gas by the light, resulting in an improvement in the etching rate.
本方法は、プラズマによる表面改質にも効果的であシ、
酸化速度や窒化速度など向上する。This method is also effective for surface modification by plasma.
Improves oxidation rate, nitriding rate, etc.
本発明によれば、プラズマ処理装置におけるガスの解離
度を高め、処理効率を著るしく向上させることができる
。According to the present invention, it is possible to increase the degree of gas dissociation in a plasma processing apparatus and to significantly improve processing efficiency.
第１図は本発明によるプラズマ処理装置の一実施例の構
成を示す断面図、第２図は本発明の効果を示す線図、第
３図は本発明によるプラズマ処理装置用のガス導入部の
構成を示す断面図である。
１・・・真空容器、２・・・対向電極、３・・・高周波
電極、４・・・インピーダンス整合回路、５・・・高周
波電源、６・・・ガス導入口、７・・・前置放電部、８
・・・試料、９・・・プラズマ、１０・・・排気口、１
１・・・ランプ、１２″＃１巨
入つ電々 Ｃｗ）FIG. 1 is a sectional view showing the configuration of an embodiment of the plasma processing apparatus according to the present invention, FIG. 2 is a diagram showing the effects of the present invention, and FIG. 3 is a diagram showing the gas introduction section for the plasma processing apparatus according to the present invention. FIG. 3 is a sectional view showing the configuration. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Counter electrode, 3... High frequency electrode, 4... Impedance matching circuit, 5... High frequency power supply, 6... Gas inlet, 7... Prefix Discharge part, 8
...Sample, 9...Plasma, 10...Exhaust port, 1
1... Lamp, 12″#1 giant electric CW)
Claims (1)
ラズマ処理装置において、プラズマ処理部以外の部分で
プラズマ化されていない状態のガスを放電しプラズマ化
する手段、もしくはガスの分解、励起、イオン化を行な
う手段のうち少なくとも一手段を具備することを特徴と
するプラズマ処理装置。 ２、上記の処理部以外の部分におけるガスのプラズマ化
にマイクロ波電力を用いることを特徴とする第１項記載
のプラズマ処理装置。 ３、上記のプラズマ処理部以外の部分におけるガスの分
解、励起、イオン化にレーザ光またはシンクロトロン放
射光を含む光を用いることを特徴とする第１項記載のプ
ラズマ処理装置。 ４、第１項記載のプラズマ処理装置において、ガスのプ
ラズマ化、分解、イオン化、励起をおこなう部分に、少
なくとも炭素と酸素と水素から構成される物質を設置す
ることを特徴とするプラズマ処理装置。 ５、第１項記載のプラズマ処理装置において、ガスのプ
ラズマ化、もしくは、分解、励起、イオン化をおこなう
部分に、少なくとも金属の酸化物、もしくは水酸化物を
設置することを特徴とするプラズマ処理装置。 ６、第１項記載のプラズマ処理装置において、少なくと
も２種類の異なつたガスを真空容器内に導入するときに
、少なくとも１種類のガスを、プラズマ発生部以外にお
いてプラズマ化することを特徴とするプラズマ処理装置
。[Scope of Claims] 1. In a plasma processing apparatus consisting of a vacuum container, a gas inlet, and a plasma generation section, a means for discharging a gas that has not been turned into plasma in a part other than the plasma processing section to turn it into plasma, or a gas 1. A plasma processing apparatus comprising at least one means for decomposing, excitation, and ionizing. 2. The plasma processing apparatus according to item 1, wherein microwave power is used to turn the gas into plasma in a portion other than the processing section. 3. The plasma processing apparatus according to item 1, wherein light including laser light or synchrotron radiation light is used for gas decomposition, excitation, and ionization in a portion other than the plasma processing section. 4. The plasma processing apparatus according to item 1, wherein a substance composed of at least carbon, oxygen, and hydrogen is installed in a portion where gas is turned into plasma, decomposed, ionized, and excited. 5. The plasma processing apparatus according to item 1, characterized in that at least a metal oxide or hydroxide is installed in the part where gas is turned into plasma, or decomposed, excited, or ionized. . 6. In the plasma processing apparatus described in item 1, the plasma is characterized in that when at least two different types of gas are introduced into the vacuum container, at least one type of gas is turned into plasma in a region other than the plasma generation part. Processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23491784A JPS61114532A (en) | 1984-11-09 | 1984-11-09 | Plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23491784A JPS61114532A (en) | 1984-11-09 | 1984-11-09 | Plasma treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61114532A true JPS61114532A (en) | 1986-06-02 |
Family
ID=16978306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23491784A Pending JPS61114532A (en) | 1984-11-09 | 1984-11-09 | Plasma treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61114532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4842686A (en) * | 1987-07-17 | 1989-06-27 | Texas Instruments Incorporated | Wafer processing apparatus and method |
| US5138973A (en) * | 1987-07-16 | 1992-08-18 | Texas Instruments Incorporated | Wafer processing apparatus having independently controllable energy sources |
-
1984
- 1984-11-09 JP JP23491784A patent/JPS61114532A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138973A (en) * | 1987-07-16 | 1992-08-18 | Texas Instruments Incorporated | Wafer processing apparatus having independently controllable energy sources |
| US4842686A (en) * | 1987-07-17 | 1989-06-27 | Texas Instruments Incorporated | Wafer processing apparatus and method |
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