JPS6032322A - Resist film removing device - Google Patents
Resist film removing deviceInfo
- Publication number
- JPS6032322A JPS6032322A JP14131883A JP14131883A JPS6032322A JP S6032322 A JPS6032322 A JP S6032322A JP 14131883 A JP14131883 A JP 14131883A JP 14131883 A JP14131883 A JP 14131883A JP S6032322 A JPS6032322 A JP S6032322A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- plasma
- resist
- wafer
- remaining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 3
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 15
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract description 2
- 150000001720 carbohydrates Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体装置の製造の際用いられるレジスト膜
を除去するレジスト膜除去装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a resist film removing apparatus for removing a resist film used in the manufacture of semiconductor devices.
周知の如く、ＬＳＩ等の半導体装置の製造においては、
微細パターン形成のためにフォトリングラフイー技術が
用いられている。この際、レジスト膜と呼ばれる感光剤
上に・ぐターンを焼き付け、このレジスト膜をマスクと
して種々の処理が行なわれている。そして、処理後のレ
ジスト膜は、従来、強酸＋０２プラズマ等によシ除去さ
れている。As is well known, in the manufacture of semiconductor devices such as LSI,
Photophosphorography technology is used to form fine patterns. At this time, a pattern is baked onto a photosensitive material called a resist film, and various treatments are performed using this resist film as a mask. The resist film after processing is conventionally removed by strong acid +02 plasma or the like.
しかしながら、強酸などの薬品によりレジスト膜を除去
する方法では、処理時に薬品によって除去されたレジス
ト膜がＬＳＩに付着したシ、薬品自体に危険性が存在す
るという欠点を有する。このようなことから、最近、０
２プラズマによりレジスト膜の除去が一般化しつつある
。However, the method of removing the resist film using chemicals such as strong acids has the disadvantage that the resist film removed by the chemicals during processing may adhere to the LSI, and the chemicals themselves are dangerous. Because of this, recently, 0
2.Removal of resist films using plasma is becoming common.
しかしながら、最近のＬＳＩの製造にはＲＩＥ（Ｒｅａ
ｃｔｉｖｅ Ｉｏｎ Ｅｔｃｈｉｎｇ ）やイオンプラ
ンテーシヨンなどの手段が用いられているため、これら
の処理を行なった後のレジスト膜は処理前と比べ分子構
造が変わっており、０２プラズマによる方法では第１図
に示す如くエツチング能力（し臣■医劣り
チング速度との関係を示す曲線を、（Ｂ）はＲＩＥ、後
のレノスト膜の処理時間とエツチング速度との関係を示
す曲線を夫々示す。However, recent LSI manufacturing requires RIE (Rea).
Because methods such as active ion etching (active ion etching) and ion plantation are used, the molecular structure of the resist film after these treatments has changed compared to before the treatment. As shown, a curve showing the relationship between etching ability and etching speed is shown, and (B) shows a curve showing the relationship between RIE and subsequent processing time of the Lennost film and etching speed.
また、０□グ２ズマによる方法によれば、段差部などで
レジスト膜を完全に除去できず、レジスト残シが生ずる
。その結果、レジスト膜除去後の工程において、パター
ンくずれやカーボン汚染をひき起こし、素子の歩留シを
低下させる。Furthermore, according to the method using 0□g2zma, the resist film cannot be completely removed at stepped portions and the like, resulting in resist residue. As a result, pattern deformation and carbon contamination occur in the process after the resist film is removed, reducing the yield of devices.
〔発明の目的）
本発明は上記事情に鑑みてなされたもので、従来の０２
プラズマを用いた装置に紫外線源を設けることによシレ
ジスト膜の除去能力を向上しえるレジスト膜除去装置を
提供することを目的とするものである。[Object of the invention] The present invention has been made in view of the above circumstances.
It is an object of the present invention to provide a resist film removing device that can improve the ability to remove a resist film by providing an ultraviolet source in a device that uses plasma.
本発明は、従来のＯ，ｆラズマによるレジスト膜除去装
置の真空チャンバー内に紫外線源を発生期の酸素原子の
発生を促すとともに、ウェーハ上に残存するレノスト膜
の分解を進め、これによシ分解の進んだレジスト膜を０
２プラズマ、オゾン、発生期の酸素原子と反応させて、
水、炭化水素等の形ですみやかに真空系に排気させ、も
ってレジスト膜をすみやかに除去できることを骨子とす
るものである。The present invention uses an ultraviolet light source in the vacuum chamber of a conventional resist film removal apparatus using O, F plasma to promote the generation of nascent oxygen atoms, promote the decomposition of the Renost film remaining on the wafer, and thereby 0 resist film that has progressed to decomposition
2 By reacting with plasma, ozone, and nascent oxygen atoms,
The main idea is that the resist film can be quickly removed by quickly evacuating water, hydrocarbons, etc. into a vacuum system.
以下、本発明の一実施例を第２図を参照して説明する。 An embodiment of the present invention will be described below with reference to FIG.
図中の１は、真空チャンバーである。このチャンバー１
は配管２を介して減圧が可能な構造となっているととも
に、配管３がら０２ガスを導入できる。同チャンバー１
の底部には、ウェハをセットするウェハキャリア４が載
置されてイル。同チャンバー１の底部には、２ケの板状
の印加電極５，５が前記ウェハキャリア４を快むように
対向して設けられている。このＲＦ印加電極５，５は、
真空チャンバー１に近接して設けられたＲＦ発生器６に
電気的に接続している。1 in the figure is a vacuum chamber. This chamber 1
has a structure in which pressure can be reduced through piping 2, and 02 gas can be introduced through piping 3. Same chamber 1
A wafer carrier 4 for setting wafers is placed on the bottom of the holder. At the bottom of the chamber 1, two plate-shaped application electrodes 5, 5 are provided so as to face the wafer carrier 4. The RF applying electrodes 5, 5 are
It is electrically connected to an RF generator 6 provided close to the vacuum chamber 1 .
同チャンバー１の上方の角部には、紫外線源としての電
力５００Ｗの２本の′低圧水銀灯７，７が設けられてい
る。また、低圧水銀灯７，７と前記チャンバー１の壁部
間には、低圧水銀灯７，７からの紫外線を効率よくウェ
ハに照射するだめの反射鏡８，８が設けられている。At the upper corner of the chamber 1, two low-pressure mercury lamps 7, 7 each having a power of 500 W and serving as ultraviolet light sources are provided. Further, between the low pressure mercury lamps 7, 7 and the wall of the chamber 1, there are provided reflecting mirrors 8, 8 for efficiently irradiating the wafer with ultraviolet rays from the low pressure mercury lamps 7, 7.
しかして、前述した構造のレジスト膜除去装置によれば
、真空チャンバー１内に低圧水銀灯７．７を設けた構造
となっているため、低圧水銀灯７，７からの紫外線によ
りＯ，ｆラズマ。According to the resist film removing apparatus having the above-described structure, since the low pressure mercury lamp 7.7 is provided in the vacuum chamber 1, the ultraviolet rays from the low pressure mercury lamps 7, 7 generate O, F plasma.
オゾン、酸素原子の発生を促すとともに、ウニ・・上に
残存するレジスト膜の分解を進めることができる。その
結果、分解の進んだレジスト膜を０□プラズマ、オゾン
、発生期の酸素原子と反応させ、レジスト膜を水、炭化
水素の形ですみやかに真空系によシ排気できる。したが
って、従来と比ベレジスト膜のエツチング速度を著しく
向上でき、レジスト残シはきわめて少なかった。したが
って、レジスト残シに起因する素子の歩留シを向上でき
る。事実、第３図に示すような分光吸収特性を持っボッ
型レジストを用いて通常用いられる露光によシウェハ９
上にパターンを形成し、ＲＩＥによシエッチング後、本
発明装置を用いて０２圧力を１０ Ｔｏｒｒ、周波数１
３．５６０ＭＨｚ、電力５００Ｗの条件でレジスト膜の
除去を行なったところ、第４図に示す如く、エツチング
速度が紫外線を照射しない場合と比べ、約５０チ向上し
た。なお、図中の（４）は紫外線を照射した場合の処理
時間とエツチング速度の関係を示す曲線を、（Ｂ）は紫
外線を照射しない場合の処理時間とエツチング速度の関
係を示す曲線を夫々示す。同図よシ、紫外線を照射した
場合のエツチング速度が照射しない場合と比べ著しく向
上していることが確認できる。In addition to promoting the generation of ozone and oxygen atoms, it also promotes the decomposition of the resist film remaining on the sea urchin. As a result, the highly decomposed resist film is reacted with 0□ plasma, ozone, and nascent oxygen atoms, and the resist film can be quickly evacuated to the vacuum system in the form of water and hydrocarbons. Therefore, the etching speed of the resist film can be significantly improved compared to the conventional method, and the amount of resist remaining is extremely small. Therefore, the yield of devices caused by resist residue can be improved. In fact, the wafer 9 can be absorbed by the exposure that is normally used using a Bot type resist with spectral absorption characteristics as shown in Fig. 3.
After forming a pattern on the top and etching it by RIE, 02 pressure was applied to 10 Torr and frequency 1 using the apparatus of the present invention.
When the resist film was removed at a frequency of 3.560 MHz and a power of 500 W, the etching rate was improved by about 50 cm compared to the case where ultraviolet rays were not irradiated, as shown in FIG. Note that (4) in the figure shows a curve showing the relationship between processing time and etching rate when ultraviolet rays are irradiated, and (B) shows a curve showing the relationship between processing time and etching rate when ultraviolet rays are not irradiated. . As can be seen from the figure, it can be seen that the etching rate when irradiated with ultraviolet rays is significantly improved compared to when it is not irradiated.
また、本発明によれば、第３図に示すような分光吸収特
性を持つレジスト膜に対しては吸収のピーク値に対応す
る波長の元を照射することニヨシ、エツチング速度を更
に向上できる。Further, according to the present invention, by irradiating a resist film having spectral absorption characteristics as shown in FIG. 3 with a wavelength corresponding to the absorption peak value, the etching speed can be further improved.
なお、上記実施例では、紫外線源として低圧水銀灯を用
いたが、これに限らず、例えば水銀・キセノン灯の他の
紫外線源を用いてもよい。また、低圧水銀灯の本数は、
上記実施例の如く、２本に限らず、第５図に示す如く多
数の低圧水銀灯をウェハ９・・・の上下左右の周囲でか
つウェハ９・・・の外周部Ａするように配置してもよい
。In the above embodiment, a low-pressure mercury lamp was used as the ultraviolet source, but the present invention is not limited to this, and other ultraviolet sources such as a mercury/xenon lamp may be used. Also, the number of low-pressure mercury lamps is
As shown in the above embodiment, not only two low-pressure mercury lamps but also a large number of low-pressure mercury lamps are arranged around the upper, lower, left, and right sides of the wafer 9 and around the outer periphery A of the wafer 9 as shown in FIG. Good too.
この場合、ウェハ９・・・への紫外線の照射量が実施例
の場合と比べて多くなり、レジスト膜のエツチング速度
を向上できる。In this case, the amount of ultraviolet rays irradiated to the wafers 9 is increased compared to the embodiment, and the etching rate of the resist film can be improved.
また、上記実施例では、ＲＦ印加電極が板状の場合につ
いて述べたが、これに限らず、他の種々の形態の場合で
もよい。例えば、第６図に示す如く、複数の低圧水銀灯
１１・・・にコイル状のＲＦ印加電極１２・・・を巻き
付けて低圧水銀灯と一体化してもよい。この場合、真空
チャン／マー（図示せず）内の空間を有効に利用できる
とともに、紫外線のウェノ・への照射量を多くしてレジ
スト膜のエツチング速度を向上できる。Furthermore, in the above embodiments, the case where the RF applying electrode is plate-shaped has been described, but the present invention is not limited to this, and various other forms may be used. For example, as shown in FIG. 6, coil-shaped RF application electrodes 12 may be wound around a plurality of low-pressure mercury lamps 11 and integrated with the low-pressure mercury lamp. In this case, the space within the vacuum chamber/mer (not shown) can be used effectively, and the etching rate of the resist film can be improved by increasing the amount of ultraviolet rays irradiated onto the substrate.
更に、上記実施例では、ウェハを立てた状態で配置する
場合について述べたが、これに限らず、例えばウェハの
面を上に向けた状態でもよい。この場合、実施例と比べ
、紫外線の照射効率を向上できる。Further, in the above embodiments, the wafer is placed in an upright position, but the arrangement is not limited thereto, and the wafer may be placed with its surface facing upward, for example. In this case, the irradiation efficiency of ultraviolet rays can be improved compared to the example.
以上詳述した如く本発明によれば、レジスト膜の除去能
力を向上し、歩留りの良好なレジスト膜除去装置を提供
することを目的とするものである。As detailed above, according to the present invention, it is an object of the present invention to provide a resist film removing apparatus with improved resist film removal ability and a good yield.
第１図はレジスト膜のＲＩＥ 、イオングランテーンヨ
ン前後の処理時間とエツチング速度との関係を示す特性
図、第２図は本発明の一実施例に係るレジスト膜除去装
置の説明図、第３図は第２図図示の装置によって除去し
たボッ型レジスト膜の分光吸収特性図、第４図は同装置
による紫外線を照射した時としない時のレジスト膜の処
理時間とエツチング速度との関係を示す特性図、第５図
及び第６図は本発明の他の実施例を示すレジスト膜除去
装置の説明図である。
１・・・真空チャンバー、４・・・ウェハキャリア、ゝ
７−；、ｊ。
与・ｉ・、；
５．１２・・・ＲＦ印加電極、６・・・ＲＦ発生器、
７゜１１・・・低圧水銀灯（紫外線源）、８・・・反射
鏡、９ ・・・ ウ ェ ノ・ 。
出願人代理人 弁理士 鈴 江 武 彦第 １ ＠
０ ５ １０
久埋吟肉 （ｍｉｎ）
第２図
第３図
第４図
ＡｉＪｅｒ’Ｉ （ｍｉｎ）1 is a characteristic diagram showing the relationship between RIE of a resist film, treatment time before and after ion grantaining, and etching rate; FIG. 2 is an explanatory diagram of a resist film removal apparatus according to an embodiment of the present invention; The figure shows the spectral absorption characteristics of a potted resist film removed by the apparatus shown in Figure 2, and Figure 4 shows the relationship between processing time and etching rate of the resist film with and without irradiation with ultraviolet rays using the same apparatus. The characteristic diagrams, FIGS. 5 and 6 are explanatory diagrams of a resist film removing apparatus showing other embodiments of the present invention. 1... Vacuum chamber, 4... Wafer carrier, ゝ7-;, j. 5.12...RF application electrode, 6...RF generator,
7゜11...Low pressure mercury lamp (ultraviolet light source), 8...Reflector, 9...Ueno. Applicant's agent Patent attorney Takehiko Suzue No. 1 @ 0 5 10 Kubu Ginku (min) Figure 2 Figure 3 Figure 4 AiJer'I (min)
Claims (1)
ズマによシ除去する装置において、ＲＦ発生器と、内部
にウェハを載置する真空チャ／バーと、この真空チャン
バー内に設けられ、かつ前記ＲＦ発生器に接続し７’ｃ
ＲＦ印加電極と、同チャンバー内に設けられた紫外線源
とを具備することを特徴とするレジスト膜除去装置。 ２、紫外線源として低圧水銀灯あるいは水銀・キセノン
灯を用いることを特徴とする特許請求の範囲第１項記載
のレジスト膜除去装置。[Claims] 1. An apparatus for removing a resist film used in semiconductor devices using 02f plasma, which includes an RF generator, a vacuum chamber/bar in which a wafer is placed, and a vacuum chamber in which a wafer is placed. provided and connected to said RF generator 7'c
A resist film removing apparatus comprising an RF applying electrode and an ultraviolet source provided in the same chamber. 2. The resist film removing apparatus according to claim 1, wherein a low-pressure mercury lamp or a mercury-xenon lamp is used as the ultraviolet source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14131883A JPS6032322A (en) | 1983-08-02 | 1983-08-02 | Resist film removing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14131883A JPS6032322A (en) | 1983-08-02 | 1983-08-02 | Resist film removing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6032322A true JPS6032322A (en) | 1985-02-19 |
Family
ID=15289119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14131883A Pending JPS6032322A (en) | 1983-08-02 | 1983-08-02 | Resist film removing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032322A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123143A (en) * | 1984-11-19 | 1986-06-11 | Fujitsu Ltd | Resist ashing method and apparatus for the same |
| JPS61154038A (en) * | 1984-12-26 | 1986-07-12 | Plasma Syst:Kk | Dry ashing apparatus |
| JPS61216328A (en) * | 1985-02-20 | 1986-09-26 | Fujitsu Ltd | Vacuum ultraviolet ray ashing apparatus |
| JPS6340320A (en) * | 1986-08-05 | 1988-02-20 | Fujitsu Ltd | Dry ashing device |
| JPS63303085A (en) * | 1987-06-01 | 1988-12-09 | Tokuda Seisakusho Ltd | Dry etching method |
| JPH0313702U (en) * | 1989-06-27 | 1991-02-12 | ||
| JPH0362911A (en) * | 1989-07-31 | 1991-03-19 | Matsushita Electric Ind Co Ltd | Metallized film capacitor and manufacture thereof |
| US5417826A (en) * | 1992-06-15 | 1995-05-23 | Micron Technology, Inc. | Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors |
-
1983
- 1983-08-02 JP JP14131883A patent/JPS6032322A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61123143A (en) * | 1984-11-19 | 1986-06-11 | Fujitsu Ltd | Resist ashing method and apparatus for the same |
| JPS61154038A (en) * | 1984-12-26 | 1986-07-12 | Plasma Syst:Kk | Dry ashing apparatus |
| JPS61216328A (en) * | 1985-02-20 | 1986-09-26 | Fujitsu Ltd | Vacuum ultraviolet ray ashing apparatus |
| JPS6340320A (en) * | 1986-08-05 | 1988-02-20 | Fujitsu Ltd | Dry ashing device |
| JPS63303085A (en) * | 1987-06-01 | 1988-12-09 | Tokuda Seisakusho Ltd | Dry etching method |
| JPH0313702U (en) * | 1989-06-27 | 1991-02-12 | ||
| JPH0362911A (en) * | 1989-07-31 | 1991-03-19 | Matsushita Electric Ind Co Ltd | Metallized film capacitor and manufacture thereof |
| US5417826A (en) * | 1992-06-15 | 1995-05-23 | Micron Technology, Inc. | Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors |
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