CN201285757Y - Integration type plasma treatment mechanism - Google Patents
Integration type plasma treatment mechanism Download PDFInfo
- Publication number
- CN201285757Y CN201285757Y CNU2008201757733U CN200820175773U CN201285757Y CN 201285757 Y CN201285757 Y CN 201285757Y CN U2008201757733 U CNU2008201757733 U CN U2008201757733U CN 200820175773 U CN200820175773 U CN 200820175773U CN 201285757 Y CN201285757 Y CN 201285757Y
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- processor structure
- plasma
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- plasma source
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Abstract
The utility model discloses an integrated plasma processing mechanism comprising a reaction chamber, a supporting disc and at least one plasma source. The reaction chamber comprises a bottom plate, a top plate and a peripheral wall surrounding the reaction chamber; the peripheral wall is provided with a side window and a feeding gate, wherein a side chamber extends outwards from the side window, and the side chamber is provided with a side wall; the reaction chamber is provided with an air inlet and an air outlet; and the supporting disc is arranged on the bottom plate. The integrated plasma processing mechanism can be simultaneously provided with various plasma sources, can improve the distribution of flow fields of process gas due to the exclusively arranged cylindrical reaction chamber so that plasmas in the cylindrical reaction chamber can be uniformly distributed so as to further improve the cleaning effect.
Description
Technical field
The utility model relates to a kind of plasma processor structure, refers to a kind of integrated plasma processor structure especially.
Background technology
Along with the fast development of high-tech industry, plasma technique is subjected to all circles all the time and payes attention to widely and use, and particularly promoting at the technologic product of semiconductor element has critical role.Under the situation that environmental consciousness is strengthened, plasma technique replaces traditional wet process and more comes into one's own simultaneously.
Along with semiconductor element density improves, live width is constantly dwindled, the function of element is fast lifting more.In order to ensure the reliability of element and manufacturing cost is dropped to minimum, routing is engaged (wire bonding) technology optimization, be very important to obtain good binding intensity and yield.It is not good that bad bond strength and low yield come from selecting for use of material in upstream pollutant sources or the advanced structure dress often.Before routing technology, the gas plasma body technique can be used for cleaning the chip contact to improve bond strength and yield.Simultaneously in order to prevent that aqueous vapor and oxygen are penetrated in the element, before component package, element surface must be done cleaning completely, to prevent the bonding not good infiltration that causes aqueous vapor, oxygen of potting resin and element, can increase the value of thrust of routing and make the distribution that bonding glue is average simultaneously.
Under the precision of technology required, the application in the LED inductrial technology also highlighted.Good adhesion during in order to ensure evaporation metal, oxygen gas plasma de-smear technology (O2 plasmadescum) also in response to and give birth to, utilize this technology can effectively promote adhering to of metal.Also can be applicable to simultaneously the blue film chip cleaning in the packaging technology behind the LED, the requirement of low temperature is the basic demand of this technology, can reach this application demand by good mechanism design.
Plasma cleaner then becomes the preferable selection of a high-effect cleaning device.
As shown in Figure 1, the existing plasma cleaner of using comprises: reaction chamber 1, inlet duct 11, exhaust apparatus 12, electrode load plate 13 (in order to the subject matter of carrying desire cleaning and as the plasma generation electrode) and radio frequency (RF) power supply source of supply 15 (in order to provide the electrode load plate 13 1 radio-frequency power supplies).One luggage carrier 14 that loads the subject matter of desire cleaning is placed on the electrode load plate 13 in the reaction chamber 1, provide plasma to clean.Existing plasma cleaner is a kind of condenser type plasma (Capacity coupled plasma) cleaner, this form plasma density is low, and the condenser type plasma has the existence of cathode dark space, plasma generation is in the outside of luggage carrier 14, therefore the plasma that is produced is difficult for entering between the thing to be cleaned of multilayer arrangement parallel shape, and its cleaning effect is limited and the uniformity is not good.
Industrial quarters has the people in order to improve above-mentioned shortcoming, directly is placed in the induction coupled antenna thing to be cleaned or the next door, and makes plasma entered between the flat board to be cleaned by electric field or the action of a magnetic field.Because inductive coupling type plasma will arrive suitable plasma uniformity, pressure limit is about 5～20m Torr, and makes the material of Coil electrode be sputtered out pollution thing to be cleaned under this pressure easily.Therefore there is the people in mechanism, to increase the rotary module desire again and improves the bad problem of the uniformity, and will respond to coupled antenna (ICP coil) places cavity to handle the problem of the pending thing of material contamination outward, but quick decline because of plasma density, processing mode relies on scattering naturally of free radical entirely, and the disposal ability of cleaning material still is limited.
Though above-mentioned many devices that improves the plasma cleaning machine internal plasma uniformity are developed, but it all mainly utilizes the method for nature diffusion, plasma spreads speed can't significantly promote, therefore the space that can improve is limited, the uniformity of plasma still only has improvement by a small margin in the plasma cleaning machine, and the material that is subject to processing can't reach even and efficient cleaning.Therefore, anxious in this industry must a kind of uniformity height, new-type plasma cleaning machine that efficient is high is developed.
The utility model content
Main purpose of the present utility model provides a kind of integrated plasma processor structure, the cylinder type reaction chamber that its uniqueness has, can promote the good flow field of process gas and scatter, make the plasma distribution in the reaction chamber more even, and then cleaning effect is more promoted.
Integrated plasma processor structure of the present utility model comprises: a reaction chamber, a load plate and at least one plasma source.Wherein, reaction chamber comprises a base plate, a top board and a perisporium that centers on reaction chamber, and perisporium has a side window and a feeding gate, and side window is outward extended with a side room, and the side room has a sidewall, and reaction chamber has an air inlet and an exhaust outlet.And load plate is to be disposed on the base plate.
Integrated plasma processor structure of the present utility model, wherein, reaction chamber can be a cylinder type reaction chamber.Therefore, the design of the cylinder type reaction chamber that has by its uniqueness can be promoted the good flow field of process gas and scatter, and makes the plasma distribution in the reaction chamber more even, and then cleaning effect is more promoted.
Integrated plasma processor structure of the present utility model, wherein, plasma source select no particular restriction for use, preferablely can be one and be disposed at flat-plate type plasma source in the side room or high-density plasma source or its load plate and can comprise a bias voltage formula plasma source.
Integrated plasma processor structure of the present utility model, wherein, plasma source can be a long-distance plasma source, and is linked to air inlet.
Integrated plasma processor structure of the present utility model, can comprise simultaneously that a plurality of plasmas come from wherein, for example: comprise a flat-plate type plasma source (being disposed in the side room) and a bias voltage formula plasma source (being disposed at load plate) simultaneously, comprise a high-density plasma source (being disposed in the side room) and a bias voltage formula plasma source simultaneously, comprise a flat-plate type plasma source and a bias voltage formula plasma source and a long-distance plasma source (being linked to air inlet) simultaneously, or comprise a high-density plasma source and a bias voltage formula plasma source and a long-distance plasma source simultaneously.Integrated plasma processor structure of the present utility model be owing to can assemble multiple plasma source supply simultaneously in wherein, so plasma generation efficient more improves, and the technology cleaning also significantly promotes with plasma treatment efficient.
Integrated plasma processor structure of the present utility model, wherein, the flat-plate type plasma source can comprise: one first dividing plate and a second partition, a battery lead plate, are linked to the air inlet unit of battery lead plate.Wherein, second partition is between first dividing plate and sidewall, and first dividing plate and a second partition all have a plurality of holes, and battery lead plate is between second partition and sidewall.Wherein, the diameter that is arranged in the hole of the diameter of hole of first dividing plate and second partition does not have particular restriction, is preferably the diameter of the diameter of the hole in first dividing plate less than the hole in the second partition.Operating pressure that the branch Bouyei of hole is different and gas flow and change to some extent preferable are distributed as outer mode of dredging in close.
Integrated plasma processor structure of the present utility model wherein, disposes a dielectric unit between battery lead plate and the second partition, reaching the effect of electrical obstruct, and make and form a confined space between battery lead plate and the second partition.
Integrated plasma processor structure of the present utility model, wherein, the material of dielectric unit does not have special restriction, is preferably aluminium oxide, Teflon, quartz or other ceramic material.
Integrated plasma processor structure of the present utility model, wherein, the preferable rotary load plate that can be of load plate.
Integrated plasma processor structure of the present utility model, wherein, the preferable multi-angle locate mode load plate that can be of load plate.
Integrated plasma processor structure of the present utility model, wherein, top board is preferable can also to have a plurality of preformed holes.
Integrated plasma processor structure of the present utility model, wherein, perisporium is preferable can also to comprise a plurality of fixed legs, is used to hang a shield.When integrated plasma processor structure of the present utility model was finished using, most soil and waste material can be attached on the shield, therefore, and the shield that main cleaning is then pulled down for cleaning, and the perisporium of the reaction chamber wiped clean easily that becomes.Because the shield under the dismounting cleans in reaction chamber is outside easily, therefore whole cleaning course is more simplified.
Integrated plasma processor structure of the present utility model, preferablely can more comprise a kind of high-density plasma source, and this high-density plasma source comprises: a battery lead plate and be embedded in a coil in the battery lead plate, and high-density plasma source is to be disposed in the side room, and the material of its battery lead plate is preferably stainless steel.
The beneficial effect of integrated plasma processor structure of the present utility model is, can assemble multiple plasma source supply simultaneously in wherein, add reaction cavity with drum, therefore can promote the good flow field of process gas scatters, make plasma generation efficient higher, cleaning efficiency more promotes.
Description of drawings
Fig. 1 is an existing plasma cleaner;
Fig. 2 A is the schematic diagram of the integrated plasma processor structure of embodiment 1 of the present utility model;
Fig. 2 B is the top view of the integrated plasma processor structure of embodiment 1 of the present utility model;
Fig. 3 A and Fig. 3 B are the fixed leg of embodiment 1 of the present utility model and the schematic diagram of shield;
Fig. 4 is the schematic diagram of the integrated plasma processor structure of embodiment 2 of the present utility model.
Fig. 5 A is the schematic diagram of the integrated plasma processor structure of embodiment 3 of the present utility model;
Fig. 5 B is the end view in the flat-plate type plasma source of embodiment 3 of the present utility model.
[main element symbol description]
1,2 reaction chamber
11 inlet ducts
12 exhaust apparatus
13 electrode load plates
14 luggage carriers
15 power supply sources of supply
21 base plates
22 top boards
221 preformed holes
23 perisporiums
231 fixed legs
232 shields
24 side windows
25 feeding gates
26 side rooms
27 sidewalls
28 air inlets
29 exhaust outlets
3 load plates
31 long-distance plasma sources
32 coils
33 quartzy hollow tubes
34 air inlet unit
341 unit of giving vent to anger
35 bias voltage formula plasma sources
High-density plasma source
361 battery lead plates
362 coils
37 flat-plate type plasma sources
371 battery lead plates
372 second partitions
373 first dividing plates
374 air inlet unit
375 holes
376 dielectric unit
Embodiment
By the following examples the utility model technology is described in more detail.
Embodiment 1
As Fig. 2 A and Fig. 2 B, Fig. 2 A is the schematic diagram of the integrated plasma processor structure of present embodiment 1, and Fig. 2 B is the top view of the integrated plasma processor structure of present embodiment 1.The integrated plasma processor structure of present embodiment 1 comprises: a cylinder type reaction chamber 2, a load plate 3 and a long-distance plasma source 31.Wherein, reaction chamber 2 comprises a base plate 21, a top board 22 and a perisporium 23 that centers on reaction chamber 2, and perisporium 23 has a side window 24 and a feeding gate 25, and side window 24 is outward extended with a side room 26, the side room has a sidewall 27, and reaction chamber 2 has an air inlet 28 and an exhaust outlet 29.Load plate 3 is to be disposed on the base plate 21.
According to the utility model, integrated plasma processor structure comprises the reaction cavity of the drum of a uniqueness, therefore can promote the good flow field of process gas and scatter.Its preliminary step is, opens feeding gate 25, sends into pending thing in the reaction chamber 2 and is placed in load plate 3 tops, after then closing feeding gate 25, bleeding via exhaust outlet 29, carries out various plasma treatment.
The kind of the applicable plasma source of integrated plasma processor structure of the present utility model has comprised: long-distance plasma source 31, flat-plate type plasma source 37 (shown in Fig. 5 A), high-density plasma source 36 (as shown in Figure 4) or bias voltage formula plasma source 35 (as shown in Figure 4), can select for use according to various different demands, present embodiment 1 is for selecting long-distance plasma source 31 for use.This long-distance plasma source 31 is general long-distance plasma source (remote plasma), and shown in Fig. 2 A, it has comprised one group of coil, 32, one quartzy hollow tube 33, an air inlet unit 34 and a unit 341 of giving vent to anger.The unit 341 of giving vent to anger is connected to the air inlet 28 of the sidewall 27 of reaction chamber 2, with the ion or the free radical of supply reaction usefulness.The material that this kind long-distance plasma source 31 is produced is mainly simple free radical, and advantage is that the surface that can not treat handled thing has the situation of polluting or damaging to take place, and is therefore comparatively gentle.And the free radical that long-distance plasma source 31 is produced can make the effect of surfaction more even.
In order to consider that reacting gas imports the distribution problem of reaction chamber, the reaction chamber 2 of present embodiment 1, the base plate 21 of its top top board 22 and below all has a plurality of preformed holes 221.So can install feeder (figure does not show) additional at top board 22 and base plate 21 simultaneously, make gas to be scattered in equably in the reaction chamber 2.In addition, in the utility model, unique cylinder type reaction chamber has more been strengthened the good flow field of process gas and has been scattered, and therefore can effectively increase plasma to the disposal ability of thing to be cleaned and the uniformity of processing.
Again together with reference to Fig. 3 A and Fig. 3 B, the reaction chamber 2 of present embodiment 1, its perisporium 23 more includes a plurality of fixed legs 231, in order to hang shield 232.This shield 232 can make reacted cleaning more simple.When the integrated plasma processor structure of present embodiment 1 is finished using, most soil and waste material can be attached on the shield 232, therefore, the shield 232 that main cleaning is then pulled down for cleaning, and the wiped clean easily that the perisporium 23 of reaction chamber 2 becomes.Because the shield 232 under the dismounting can be in reaction chamber 2 outside cleanings, therefore whole cleaning course is more simplified.
Please refer to Fig. 4, it is the schematic diagram of the integrated plasma processor structure of present embodiment 2.Except including the long-distance plasma source 31 identical with embodiment 1, the integrated plasma processor structure of present embodiment 2 more includes a high-density plasma source 36 (being disposed in the side room 26) and a bias voltage formula plasma source 35.
The integrated plasma processor structure of present embodiment 2, wherein high-density plasma source 36 comprises: a battery lead plate 361 and be embedded in a coil 362 in the battery lead plate 361.The material of battery lead plate 361 is not particularly limited, and can be pottery or quartz, then selects pottery for use at this.
The integrated plasma processor structure of present embodiment 2, the reaction cavity that has drum equally scatters with the good flow field of promoting process gas, and it has integrated four kinds of plasma sources, so plasma power greatly promotes, the cleaning efficiency height, the reaction time also can significantly be shortened.
Please refer to Fig. 5 A and 5B, its Fig. 5 A is the schematic diagram of the integrated plasma processor structure of present embodiment 3, and Fig. 5 B then is the end view in the flat-plate type plasma source 37 of present embodiment 3.The integrated plasma processor structure of present embodiment 3 comprises a flat-plate type plasma source 37, and load plate 3 is a rotary type load plate, therefore except the design of cylinder type reaction chamber, add rotatable load plate, can promote the equally distributed effect of gas flowfield in the cavity more.Wherein, flat-plate type plasma source 37 comprises: one first dividing plate 373, a second partition 372, a battery lead plate 371 and are linked to the air inlet unit 374 of battery lead plate 371, wherein first dividing plate 373 and a second partition 372 have a plurality of holes 375,377 respectively, and dispose a dielectric unit 376 between battery lead plate 371 and the second partition 372.Dielectric unit 376 is in order to battery lead plate 371 and second partition 372 electrical isolation, and makes and form a confined space between battery lead plate and the second partition.Gas enters into side room 26 (shown in Fig. 5 A) via air inlet unit 374, after the effect via battery lead plate 371, enters into reaction chamber 2 inside to react by the hole 377 of second partition 372 and the hole 375 of first dividing plate 373 in regular turn again.Because in the present embodiment, the diameter of the hole 375 of first dividing plate 373 is the diameters less than the hole 377 of second partition 372, and the quantity of the hole 375 of first dividing plate 373 is more than the quantity of the hole 377 of second partition 372, so when plasma gas in regular turn behind the hole of the hole 377 by second partition 372 and first dividing plate 373, plasma gas can import reaction chamber 2 inside even and smooth-goingly, and the surface of pending thing can not damaged because of the powerful bombardment of plasma.Therefore, the integrated plasma processor structure of present embodiment 3 can effectively also be handled pending thing apace under the prerequisite that does not injure pending thing surface.
The scope of application of integrated plasma processor structure of the present utility model is extensive, comprise: the cleaning purposes, change subsides cleanings (Blue chip), poly-acetyl ammonia plate (Polyimide), protected type internal memory, Liquid Crystal Module, glass substrate, flexible panel extends roller as cleaning multi-disc wafer, printed circuit board (PCB), metal coupling, ball lock array base palte (BGA), crystal-coated packing substrate plate (Flip chip), blue film; Surfaction (hydrophily, hydrophobicity upgrading); Etching is as wafer regeneration (recovery) and solar chip sidewall etch; Anti-fingerprint film forming and general dielectric medium film forming etc.The design of integrated plasma processor structure of the present utility model can reduce cavity and pollute, improves the whole speed of response, promotes the object being treated surface state uniformity.
In sum, integrated plasma processor structure of the present utility model, the cylinder type reaction chamber that its uniqueness has can be promoted the good flow field of process gas and scatter, and makes the plasma distribution in the reaction chamber more even, and then cleaning effect is more promoted.Moreover, integrated plasma processor structure of the present utility model since can assemble simultaneously multiple plasma source supply (as, have flat-plate type plasma source, bias voltage formula plasma source and long-distance plasma source simultaneously) in wherein, therefore plasma generation efficient more improves, cleaning efficiency also significantly promotes, and is in fact one to have the creation of initiative and practicality concurrently.
The foregoing description is only given an example for convenience of description, and the interest field that the utility model is advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (18)
1, a kind of integrated plasma processor structure is characterized in that comprising:
One reaction chamber comprises a base plate, a top board and a perisporium that centers on this reaction chamber, and this perisporium has a side window and a feeding gate, and this side window is outward extended with a side room, and this side room has a sidewall, and this reaction chamber has an air inlet and an exhaust outlet;
One load plate, be disposed at reaction chamber in; And
At least one plasma source.
2, integrated plasma processor structure as claimed in claim 1 is characterized in that, this reaction chamber is a cylinder type reaction chamber.
3, integrated plasma processor structure as claimed in claim 1 is characterized in that, this plasma source is a flat-plate type plasma source, and this flat-plate type plasma source is disposed in this side room.
4, integrated plasma processor structure as claimed in claim 1 is characterized in that, this load plate also comprises a bias voltage formula plasma source.
5, integrated plasma processor structure as claimed in claim 1 is characterized in that, this plasma source is a long-distance plasma source, and this long-distance plasma source is linked to this air inlet.
6, integrated plasma processor structure as claimed in claim 1 is characterized in that, this plasma source is a high-density plasma source, and this high-density plasma source is disposed in this side room.
7, integrated plasma processor structure as claimed in claim 6 is characterized in that this high-density plasma source comprises: a battery lead plate and be embedded in a coil in this battery lead plate, and this high-density plasma source is disposed in this side room.
8, integrated plasma processor structure as claimed in claim 6 is characterized in that, also comprises a long-distance plasma source, and this long-distance plasma source is to be linked to this air inlet.
9, integrated plasma processor structure as claimed in claim 6 is characterized in that, this load plate also comprises a bias voltage formula plasma source.
10, integrated plasma processor structure as claimed in claim 3, it is characterized in that, this flat-plate type plasma source comprises: one first dividing plate and a second partition, a battery lead plate, are linked to the air inlet unit of this battery lead plate, wherein, this second partition is between this first dividing plate and this sidewall, this first dividing plate and a second partition all have a plurality of holes, and this battery lead plate is between this second partition and this sidewall.
11, integrated plasma processor structure as claimed in claim 10 is characterized in that, this diameter of hole that is arranged in first dividing plate is less than the diameter of the hole of this second partition.
12, integrated plasma processor structure as claimed in claim 10 is characterized in that, disposes a dielectric unit between this battery lead plate and this second partition.
13, integrated plasma processor structure as claimed in claim 11 is characterized in that, the material of this dielectric unit is aluminium oxide, Teflon, quartz or other ceramic material.
14, integrated plasma processor structure as claimed in claim 10 is characterized in that, the material of this battery lead plate is a stainless steel.
15, integrated plasma processor structure as claimed in claim 1 is characterized in that, this load plate is a rotary load plate.
16, integrated plasma processor structure as claimed in claim 1 is characterized in that, this load plate is a multi-angle locate mode load plate.
17, integrated plasma processor structure as claimed in claim 1 is characterized in that this top board also has a plurality of preformed holes.
18, integrated plasma processor structure as claimed in claim 1 is characterized in that this perisporium also comprises a plurality of fixed legs, is used to hang a shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201757733U CN201285757Y (en) | 2008-10-28 | 2008-10-28 | Integration type plasma treatment mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201757733U CN201285757Y (en) | 2008-10-28 | 2008-10-28 | Integration type plasma treatment mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201285757Y true CN201285757Y (en) | 2009-08-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201757733U Expired - Fee Related CN201285757Y (en) | 2008-10-28 | 2008-10-28 | Integration type plasma treatment mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201285757Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107999469A (en) * | 2017-11-20 | 2018-05-08 | 安徽晓星能源科技有限公司 | A kind of midfrequent AC aura cleans power supply |
| CN113070288A (en) * | 2021-03-26 | 2021-07-06 | 中国计量大学 | Microwave plasma photoresist removing equipment |
-
2008
- 2008-10-28 CN CNU2008201757733U patent/CN201285757Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107999469A (en) * | 2017-11-20 | 2018-05-08 | 安徽晓星能源科技有限公司 | A kind of midfrequent AC aura cleans power supply |
| CN107999469B (en) * | 2017-11-20 | 2021-04-27 | 安徽晓星能源科技有限公司 | Medium-frequency alternating-current glow cleaning power supply |
| CN113070288A (en) * | 2021-03-26 | 2021-07-06 | 中国计量大学 | Microwave plasma photoresist removing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090805 Termination date: 20121028 |