CN202238033U - Device for modifying surface of material by low temperature plasmas - Google Patents
Device for modifying surface of material by low temperature plasmas Download PDFInfo
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- CN202238033U CN202238033U CN 201120333712 CN201120333712U CN202238033U CN 202238033 U CN202238033 U CN 202238033U CN 201120333712 CN201120333712 CN 201120333712 CN 201120333712 U CN201120333712 U CN 201120333712U CN 202238033 U CN202238033 U CN 202238033U
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Abstract
The utility model provides a device for modifying the surface of a material by low temperature plasmas. The device comprises an extract opening, a cavity inner wall electrode, inner electrodes, inner electrode insulated fixing seats, sample trays, sample frame supporting guide rails, a gas feeding port and a plasma generating power supply. A plasma processing cavity consists of a cavity outer wall electrode and the inner electrodes. The outer wall electrode is grounded. The sample frame supporting guide rails are fixed on the inner electrodes. Samples are placed on sample frames. The sample trays are supported by the sample frame guide rails. The samples are positioned in a space surrounded by the inner electrodes outside an electrode assembly. The device provided by the utility model has mild plasma polymerization reaction, low side reaction and strong controllability. The requirement of the industrial production is greatly met.
Description
Technical field
The utility model relates to the low-temperature plasma modified device of a kind of material surface.
Background technology
The material surface modifying treatment technology is one of material preparation technology of generally using at present; Its basic principle is under certain external condition; Material exterior materials and material surface generation physics or chemical reaction; From but the material surface state changes or at new element of material surface production and new group, finally satisfy the needs of practical application.Realize that at present the method that material surface is handled is generally the liquid phase reactor method, because the liquid phase reactor method exists energy consumption big, environment is had the shortcoming of pollution, the method for being badly in need of a kind of energy-conserving and environment-protective substitutes.
The low temperature plasma surface treatment is: under negative pressure (vacuum), apply high-frequency electric field for the reacting gas environment, gas ionization under the excitation of high-frequency electric field produces plasma.Plasma is the 4th attitude of material; Wherein contain various active particles such as a large amount of electronics, ion and free radical; Active particle and material surface generation physics and chemical reaction, thus structure, composition and the group of material surface are changed, be met the surface of actual instructions for use.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, to the not influence of performance of material internal bulk material, is desirable surface modification means.
Encourage the temperature of the plasma that produces to approach room temperature at the negative pressure state high-frequency electric field, therefore claim low temperature plasma again.Because its operating temperature is low, so can handle all material that comprises plastics.
Under the plasmoid reaction, excited state particle has played crucial effect.At first excited state particle is captured the hydrogen atom formation free radical on the high polymer main chain; Main chain free radical and other excited state particles or free radical react then; Make and refuse water or hydrophilic radical, thereby make material have the water of refusing or hydrophily in polymer surface production.Usually, pending sample is positioned in the plasma discharge region, and other particle (like electronics, ion etc.) under the plasmoid constantly bombards material surface in course of reaction at this moment, in material surface triggered degradation and etching.The result has generated a large amount of low molecular product at material surface, but also has corroded material surface.In the occasion that the material surface roughness is had relatively high expectations, the drawback that conventional plasma treatment exists the surface to be etched.
Therefore, in the process of plasma surface modification, introducing radical reaction and degradation reaction are taking place in material surface simultaneously.And degradation reaction hopes to avoid as far as possible.
Remote plasma can overcome the drawback that the above conventional plasma exists, and can realize that promptly the surface modification of material has been avoided etching and degraded to material surface again.
Remote plasma is that sample is placed on the position away from plasma discharge.Comprise electronics, ion and excited state particle in the plasma.These particles disappear in compound process (electronics and cation are compound, cation and anion is compound, excited state particle and excited state particle be compound), and their recombination rate is respectively: 10
-7, 10
-7, 10
-33Cm
3/ s.So excited state particle is longer than the life-span of electronics and ion in plasma.The remote plasma body technique proposes based on the survival life-span different features of various active particles in the plasma atmosphere just.The same with conventional plasma; Atom, ion, molecule and the molecular fragment isoreactivity particle of excitation state contained in the remote plasma tagma; But because processing region and region of discharge are by appropriate separation; The concentration of short-life electronics, ion decays rapidly, so that long-life metastable atom, living radical etc. have the concentration of chemically active ion is higher].Simultaneously, also the adverse effect of particles such as electronics, ion to material surface reduced as much as possible.
Domestic have seen the remote plasma surface modification of materials reported in the literature, such as Chen Jierong, etc., but its use is remote inductively coupled plasma, the method has the following significant drawbacks: the inductive coupling structure constraints, the can not handle the volume of the cavity bigger, unable to meet the needs of industrial applications.
The utility model content
In order to realize utilizing remote plasma batch process material surface; Overcome the deficiency that existing conventional plasma modification technology exists, provide a kind of surface modification of material that promptly can realize to avoid again the etching of material surface and the plasma surface processing device of degraded.
To achieve these goals, the utility model provides following technical scheme:
The low-temperature plasma modified device of a kind of material surface; Said device comprises bleeding point, cavity inner wall electrode, interior electrode, interior electrode insulation holder, sample tray, specimen holder supporting guide, feeds gas port and plasma generation power supply composition; Plasma processing chambers is made up of cavity inner wall electrode, interior electrode, the cavity inner wall electrode grounding; On the electrode, sample was positioned on the specimen holder in the specimen holder supporting guide was fixed on, and sample tray is supported by the specimen holder supporting guide, and sample is positioned at the space that the electrode beyond the electrode group centers on.
Preferably, shape is identical in the interior electrode vacuum chamber, and spacing is between 2mm---50mm to each other.
Preferably, interior electrode is fixed on the vacuum chamber inwall by interior electrode insulation holder, and interior electrode holder is that insulating materials makes the internal and external electrode insulation.
Preferably, have some interior electrode air-vents on the interior electrode plane, be beneficial to the circulation of distribution of gas and various active particles.
Preferably, sample is positioned on the sample tray.
Preferably, have some air-vents on the sample tray.
Preferably, sample tray is positioned on the specimen holder supporting guide, and the specimen holder supporting guide is fixed on the vacuum chamber inwall.
Preferably, the specimen holder supporting guide is made by insulating materials.
Preferably, vacuum chamber is provided with bleeding point and feeds gas port, lays respectively at the bottom and the top of vacuum chamber.
Compared with prior art, the utlity model has following distinguishing feature:
1, the energy of active particle is moderate in the remote zone, and plasma polymerization is gentle, side reaction is few, controllability is strong;
2, region of discharge and processing region are separated, and have alleviated because of the damage to carrier material and deposited polymer of the electromagnetic field of ion bom bardment, ultra-violet radiation and excitaton source (like microwave);
3, can on the sensitive carrier material surface, carry out plasma polymerization;
4, because monomer can be introduced at the downstream area of plasma, avoided in the plasma discharge upper state active particle to the direct effect of monomer molecule;
5, the structure of deposited film is controlled easily, and purity is higher;
6, reduced the polymerization of monomer on chamber wall or interior electrode surface.
Description of drawings
Fig. 1 is the structural representation of the utility model
Label is among the figure:
1-feeds electrode air-vent in the gas port 2-cavity inner wall electrode 3-
Electrode 5-bleeding point 6-handles material in the 4-
7-plasma generation power supply 8-specimen holder supporting guide 9-sample tray
Electrode insulation holder in the 10-
The specific embodiment
Below in conjunction with accompanying drawing the preferred embodiment of the utility model is set forth in detail, thereby the protection domain of the utility model is made more explicit defining so that advantage of the utility model and characteristic can be easier to it will be appreciated by those skilled in the art that.
As shown in Figure 1; The low-temperature plasma modified device of a kind of material surface; Said device comprises bleeding point 5, cavity inner wall electrode 2, interior electrode 4, fixing 10 of interior electrode insulation, sample tray 9, specimen holder supporting guide 8, feeds gas port 1 and plasma generation power supply 7 compositions; Plasma processing chambers is made up of cavity inner wall electrode 2, interior electrode 4, cavity inner wall electrode 2 ground connection; On the electrode 4, sample was positioned on the specimen holder in specimen holder supporting guide 8 was fixed on, and sample tray 9 is supported by specimen holder supporting guide 8, and sample is positioned at the space that the electrode 4 beyond the electrode group centers on.Interior electrode 4 is identical with the vacuum chamber inner wall shape, and spacing is between 2mm---50mm to each other.Interior electrode 4 is fixed on the vacuum chamber inwall by interior electrode insulation holder 10, and interior electrode holder 10 makes the internal and external electrode insulation for insulating materials.Have some interior electrode air-vents 3 on interior electrode 4 planes, be beneficial to the circulation of distribution of gas and various active particles.Sample is positioned on the sample tray 9.Have some air-vents on the sample tray 9.Sample tray 9 is positioned on the specimen holder supporting guide 8, and specimen holder supporting guide 8 is fixed on the vacuum chamber inwall.Specimen holder supporting guide 8 is made by insulating materials.Vacuum chamber is provided with bleeding point 5 and feeds gas port 1, lays respectively at the bottom and the top of vacuum chamber.
Adopt negative pressure, capacitance coupling plasma discharge, treating material 6 is positioned over outside the region of discharge, and chamber walls ground connection is established electrode 4 in the cavity in the vacuum chamber, and electrode 4 connects high frequency electric source in the cavity.Electrode 4 is identical with the vacuum chamber inner wall shape in the cavity, and spacing is between 5mm---50mm to each other.Perforate on the interior electrode plane is beneficial to the circulation of distribution of gas and various active particles.
The above; Be merely the specific embodiment of the utility model; But the protection domain of the utility model is not limited thereto; Any those of ordinary skill in the art are in the technical scope that the utility model disclosed, and variation or the replacement that can expect without creative work all should be encompassed within the protection domain of the utility model.Therefore, the protection domain of the utility model should be as the criterion with the protection domain that claims were limited.
Claims (9)
1. low-temperature plasma modified device of material surface; Said device comprises bleeding point, cavity inner wall electrode, interior electrode, interior electrode insulation holder, sample tray, specimen holder supporting guide, feeds gas port and plasma generation power supply composition; It is characterized in that; Plasma processing chambers is made up of cavity inner wall electrode, interior electrode, the cavity inner wall electrode grounding; On the electrode, sample was positioned on the specimen holder in the specimen holder supporting guide was fixed on, and sample tray is supported by the specimen holder supporting guide, and sample is positioned at the space that the electrode beyond the electrode group centers on.
2. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that, shape is identical in the interior electrode vacuum chamber, and spacing is between 2mm---50mm to each other.
3. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that interior electrode is fixed on the vacuum chamber inwall by interior electrode insulation holder, and interior electrode holder is that insulating materials makes the internal and external electrode insulation.
4. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that, has some interior electrode air-vents on the interior electrode plane, is beneficial to the circulation of distribution of gas and various active particles.
5. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that sample is positioned on the sample tray.
6. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that, has some air-vents on the sample tray.
7. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that sample tray is positioned on the specimen holder supporting guide, and the specimen holder supporting guide is fixed on the vacuum chamber inwall.
8. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that the specimen holder supporting guide is made by insulating materials.
9. the low-temperature plasma modified device of a kind of material surface according to claim 1 is characterized in that, vacuum chamber is provided with bleeding point and feeds gas port, lays respectively at the bottom and the top of vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120333712 CN202238033U (en) | 2011-09-07 | 2011-09-07 | Device for modifying surface of material by low temperature plasmas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120333712 CN202238033U (en) | 2011-09-07 | 2011-09-07 | Device for modifying surface of material by low temperature plasmas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202238033U true CN202238033U (en) | 2012-05-30 |
Family
ID=46099338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120333712 Expired - Lifetime CN202238033U (en) | 2011-09-07 | 2011-09-07 | Device for modifying surface of material by low temperature plasmas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202238033U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594318A (en) * | 2013-11-27 | 2014-02-19 | 苏州市奥普斯等离子体科技有限公司 | Plasma circular processing device |
| CN107018617A (en) * | 2017-03-16 | 2017-08-04 | 深圳市奥普斯等离子体科技有限公司 | A kind of material surface processing unit and method |
-
2011
- 2011-09-07 CN CN 201120333712 patent/CN202238033U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594318A (en) * | 2013-11-27 | 2014-02-19 | 苏州市奥普斯等离子体科技有限公司 | Plasma circular processing device |
| CN103594318B (en) * | 2013-11-27 | 2015-09-16 | 苏州市奥普斯等离子体科技有限公司 | A kind of plasma cyclic processing device |
| CN107018617A (en) * | 2017-03-16 | 2017-08-04 | 深圳市奥普斯等离子体科技有限公司 | A kind of material surface processing unit and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161010 Address after: 518000 Guangdong city of Shenzhen province Luohu District Lake Street No. 118 Shennan East Road, Heping Road, the world financial center tower B Bao - Ping Street 0623 Patentee after: Shenzhen Aupu Plasma Technology Co., Ltd. Address before: 2 No. 215000, Taishan Road, hi tech Industrial Development Zone, Jiangsu, Suzhou Patentee before: Suzhou OPS Plasma Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |