CN106548918A - A kind of magnetization capacitively coupled plasma source of radio frequency and direct current combination drive - Google Patents
A kind of magnetization capacitively coupled plasma source of radio frequency and direct current combination drive Download PDFInfo
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- CN106548918A CN106548918A CN201610937954.4A CN201610937954A CN106548918A CN 106548918 A CN106548918 A CN 106548918A CN 201610937954 A CN201610937954 A CN 201610937954A CN 106548918 A CN106548918 A CN 106548918A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
Abstract
The invention discloses the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, including plasma discharge cavity room, air inlet, gas outlet, the first pole plate, the second pole plate, substrate, DC source, radio-frequency power supply and magnetic field generator；First pole plate and the second pole plate are arranged in parallel in plasma discharge cavity room, and one end of DC source is connected to the first pole plate, other end ground connection；One end of radio-frequency power supply is connected to the second pole plate, other end ground connection；Substrate is arranged on the second pole plate and positioned at the surface relative with the first pole plate；Air inlet is arranged on the side of plasma discharge cavity room, and gas outlet is arranged on the opposite side of plasma discharge cavity room, and the magnetic field that magnetic field generator is arranged on outside plasma discharge cavity room and produces is parallel to the first pole plate and the second pole plate.As magnetic field affects, high energy secondary electron and thermoelectron will be bound in main plasma area, and ionization degree will be improved, so as to increase considerably plasma density.
Description
Technical field
The invention belongs to plasma discharging teclmiques field, more particularly, to a kind of radio frequency and direct current combination drive
Magnetization capacitively coupled plasma source.
Background technology
Plasma discharge can be produced with chemically active material, so being widely used in changing the surface of material
Characteristic.In global process industry, vital effect is had based on the material process technology of low temperature plasma, for example, is existed
In whole large scale integrated circuit manufacturing process, there is nearly 1/3rd operation（Thin film deposition, etching and ion implanting, clearly
Wash）Complete by plasma process.Large scale integrated circuit process industry always towards bigger chip area,
Narrower live width and lower unit cost direction are developed, and the core that chamber diameter is 450mm is being developed in current International Industry
Piece production technology.And the plasma source for being used for plasma etching, deposition and material surface process mainly has electron cyclotron altogether
Shake（ECR）Plasma source, inductive coupled plasma source（ICP）With capacitively coupled plasma source（CCP）.
In above-mentioned several plasma sources, the electric discharge device of ECR sources and ICP source is cylindrical structural, with operating air pressure
Low, plasma density is high, the advantage that anisotropy is good, but as power will be coupled to plasma by medium window
In, therefore have certain power loss；And ECR sources employ stronger magnetic field（Usually 845G）To constrain plasma, institute
To be difficult to keep large-area uniformity.The electric discharge device in CCP sources is electrode structure, and power direct-coupling is to plasma
Body, with apparatus structure is simple, low cost, manageable advantage, but plasma density is relatively low.In etching technics
In, CCP sources are due to electronics and ion energy is higher is mainly used in dielectric etch, the etching of such as silicon dioxide；And ICP source by
It is high in density and ion energy is low is mainly used in metal and semi-conducting material etching, such as etching of silicon.Industrial quarters is needed at present
Want the low pressure plasma source that high particle flux and ion energy are controllable, this demand driving high-density plasma source
Development, but existing plasma source is still individually present some problems.Although ECR sources and ICP source plasma density are high,
As the height and diameter ratio of its chamber are often 1 or bigger, and power is to be coupled to plasma by medium window
In body, thus plasma produce and transportation in the non-uniformity in radial position that brings and power loss be can not
Avoid.Although CCP sources can provide radially uniform material process result, damage of the power on medium window is also avoided that
Lose, but its plasma density is relatively low, etch rate is slow.So it is controllable and economical how to obtain particle flux height, ion energy
Profitable plasma source is industrial quarters problem demanding prompt solution.
The content of the invention
For the defect of prior art, it is an object of the invention to provide the magnetization of a kind of radio frequency and direct current combination drive is held
Property coupled plasma source, it is intended to solve the problems, such as that the plasma density in capacitively coupled plasma source in prior art is low.
The invention provides the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, its feature exists
In, including：Plasma discharge cavity room, air inlet, gas outlet, the first pole plate, the second pole plate, substrate, DC source, radio frequency electrical
Source and magnetic field generator；First pole plate and the second pole plate are arranged in parallel in plasma discharge cavity room, DC source
One end is connected to the first pole plate, the other end ground connection of DC source；One end of radio-frequency power supply is connected to the second pole plate, radio-frequency power supply
The other end ground connection；Substrate is arranged on the second pole plate and positioned at the surface relative with the first pole plate；Air inlet be arranged on etc. from
Daughter is discharged the side of chamber, and gas outlet is arranged on the opposite side of plasma discharge cavity room, magnetic field generator is arranged on etc. from
Outside daughter discharge cavity room and produce magnetic field parallel to the first pole plate and the second pole plate.
After the present invention passes to negative DC source on pole plate and places hot-wire coil or permanent magnet outside chamber, due to flat
The magnetic field in row pole plate direction affects, and high energy secondary electron and thermoelectron will be bound in main plasma area, and ionization degree will be improved,
So as to increase considerably plasma density.
Further, during work, in plasma discharge cavity room, chamber is evacuated environment by gas outlet, is entered
QI KOU is passed through reacting gas, while gas outlet takes waste gas away, has negative voltage on the first pole plate being connected with DC source, and penetrates
There is radio-frequency voltage on second pole plate of frequency power connection, and voltage be formed between first pole plate and second pole plate
Drop, the voltage can puncture reacting gas so as to produce plasma；As the radio-frequency power supply constantly adds to the plasma
Heat causes to define on stable plasma source, and first pole plate between first pole plate and second pole plate
Negative electricity pressure energy induce secondary electron from the first pole plate and the second pole plate, so as to increase plasma density；The magnetic field
The magnetic field energy constraint plasma motion parallel to first pole plate and second pole plate that generator is produced, reduces
Loss of the gas ions on pole plate and wall；DC source and radio-frequency power supply connect the first pole plate and the second pole plate respectively, and
Voltage drop is formed between first pole plate and the second pole plate, the voltage can puncture reacting gas so as to produce plasma, substrate quilt
Be placed on the second pole plate and positioned at the surface relative with the first pole plate, the plasma of generation can be etched to which, deposit or
Sputtering.
Further, including：Plasma discharge cavity room, air inlet, gas outlet, the first pole plate, the second pole plate, lining
Bottom, DC source, radio-frequency power supply and magnetic field generator；First pole plate and the second pole plate are arranged in parallel in plasma discharge
Within the chamber, one end of DC source are connected to the first pole plate, the other end ground connection of DC source；One end of radio-frequency power supply is connected to
Second pole plate, the other end ground connection of radio-frequency power supply；Substrate is arranged on the first pole plate and positioned at the surface relative with the second pole plate；
Air inlet is arranged on the side of plasma discharge cavity room, and gas outlet is arranged on the opposite side of plasma discharge cavity room, magnetic field
The magnetic field that generator is arranged on outside plasma discharge cavity room and produces is parallel to the first pole plate and the second pole plate.
Further, during work, in plasma discharge cavity room, chamber is evacuated environment by gas outlet, is entered
QI KOU is passed through reacting gas, while gas outlet takes waste gas away, has negative voltage on the first pole plate being connected with DC source, and penetrates
There is radio-frequency voltage on second pole plate of frequency power connection, and voltage be formed between first pole plate and second pole plate
Drop, the voltage can puncture reacting gas so as to produce plasma；As the radio-frequency power supply constantly adds to the plasma
Heat causes to define on stable plasma source, and first pole plate between first pole plate and second pole plate
Negative electricity pressure energy induce secondary electron from the first pole plate and the second pole plate, so as to increase plasma density；The magnetic field
The magnetic field energy constraint plasma motion parallel to first pole plate and second pole plate that generator is produced, reduces
Loss of the gas ions on pole plate and wall；Substrate is placed on the first pole plate and positioned at the table relative with the second pole plate
Face, the ion of generation are accelerated on substrate in the presence of DC source, can carry out ion implanting to which.
The invention provides the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, including：Deng from
Daughter electric discharge chamber, air inlet, gas outlet, the first pole plate, the second pole plate, DC source, radio-frequency power supply, magnetic field generator, open
Hole and extraction electrode；First pole plate and the second pole plate are arranged in parallel in plasma discharge cavity room, and the one of DC source
End is connected to the first pole plate, the other end ground connection of DC source；One end of radio-frequency power supply is connected to the second pole plate, radio-frequency power supply
The other end is grounded；Air inlet is arranged on the side of plasma discharge cavity room, and gas outlet is arranged on plasma discharge cavity room
Opposite side, the magnetic field that magnetic field generator is arranged on outside plasma discharge cavity room and produces is parallel to the first pole plate and the second pole
Plate；A perforate is offered on the wall of any side in plasma discharge cavity room, extraction electrode is connected with the perforate.
Further, during work, in plasma discharge cavity room, chamber is evacuated environment by gas outlet, is entered
QI KOU is passed through reacting gas, while gas outlet takes waste gas away, has negative voltage on the first pole plate being connected with DC source, and penetrates
There is radio-frequency voltage on second pole plate of frequency power connection, and voltage be formed between first pole plate and second pole plate
Drop, the voltage can puncture reacting gas so as to produce plasma；As the radio-frequency power supply constantly adds to the plasma
Heat causes to define on stable plasma source, and first pole plate between first pole plate and second pole plate
Negative electricity pressure energy induce secondary electron from the first pole plate and the second pole plate, so as to increase plasma density；The magnetic field
The magnetic field energy constraint plasma motion parallel to first pole plate and second pole plate that generator is produced, reduces
Loss of the gas ions on pole plate and wall；The a large amount of ions for producing are brought out by perforate in the presence of extraction electrode, can
As the ion source of various equipment.
Further, magnetic field generator is hot-wire coil or permanent magnet.
Further, the distance between first pole plate and second pole plate L is 1 centimetre～10 centimetres.
The invention has the advantages that：The magnetization capacitively coupled plasma source of this radio frequency and direct current combination drive exists
Pass on one pole plate negative DC source and add parallel to the external magnetic field of pole plate after, the uniform high density of large area can be obtained
（1019m-3～1020m-3）Plasma, its plasma density is than high two to three amounts of the plasma density in tradition CCP sources
Level such that it is able to optimize the Technologies such as material surface process.Meanwhile, magnetization capacitive coupling of radio frequency and direct current combination drive etc.
Plasma source is on the basis of tradition CCP sources simple structure is kept, it is only necessary to plus negative DC source and in chamber on pole plate
Outdoor placement magnetic field generator, which ensure that the feasibility of improved, process, greatly reduce improvement cost.
Description of the drawings
The radio frequency and the magnetization capacitively coupled plasma source of direct current combination drive that Fig. 1 is provided for first embodiment is illustrated
Figure.
The radio frequency and the magnetization capacitively coupled plasma source of direct current combination drive that Fig. 2 is provided for second embodiment is illustrated
Figure.
The radio frequency and the magnetization capacitively coupled plasma source of direct current combination drive that Fig. 3 is provided for 3rd embodiment is illustrated
Figure.
Radio frequency and magnetization capacitively coupled plasma source and the prior art of direct current combination drive that Fig. 4 is provided for the present invention
Plasma density figure during contrast, under different situations.
In figure：1 is plasma discharge cavity room, and 2 is air inlet, and 3 is gas outlet, and 4 is the first pole plate, and 5 is the second pole plate,
6 is substrate（Silicon chip or other pending materials）, 7 is DC source, and 8 is radio-frequency power supply, and 9 is magnetic field generator, and 10 is to open
Hole, 11 is extraction electrode.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, and
It is not used in the restriction present invention.
Radio frequency and the magnetization capacitively coupled plasma source of direct current combination drive that the present invention is provided, not only maintain CCP
The original excellent properties in source, and the uniform high density of large area can be produced at low pressure（Up to 1020m-3）Plasma；
Can be widely applied to the fields such as material surface process, ion source, the etching in microelectronic technique and deposition.
The radio frequency and the device in the magnetization capacitively coupled plasma source of direct current combination drive that the present invention is provided is flat for one
Row pole plate capacitive coupling discharging system, including a vacuum chamber, inside have two parallel plate electrodes, and polar plate spacing is L, a pole plate
Radio-frequency power supply is passed to, another pole plate passes to negative DC source, chamber ground connection, and magnetic field generator is placed outside chamber to produce
The raw magnetic field parallel to pole plate.The present invention adopts direct current and radio frequency combination drive, and externally-applied magnetic field.
In the present invention, after passing to the external magnetic field of negative DC source addition parallel to pole plate on a pole plate, can
Obtain the uniform high density of large area（1019m-3-1020m-3）Plasma, the comparable tradition CCP sources of its plasma density etc.
High two to three magnitudes of plasma density such that it is able to optimize the Technologies such as material surface process.Meanwhile, radio frequency and direct current are mixed
The magnetization capacitively coupled plasma source that conjunction drives is on the basis of tradition CCP sources simple structure is kept, it is only necessary on pole plate
Magnetic field generator is placed plus negative DC source and outside chamber, the feasibility of improved, process is which ensure that, is greatly reduced
Improvement cost.
Fig. 1 shows the magnetization capacitively coupled plasma source structure figure of radio frequency and direct current combination drive.The plasma
Source includes：Plasma discharge cavity room 1, air inlet 2, gas outlet 3, the first pole plate 4, the second pole plate 5, substrate 6, DC source 7,
Radio-frequency power supply 8 and magnetic field generator 9, the first pole plate 4 and the second pole plate 5 it is arranged in parallel in plasma discharge cavity room 1,
One end of DC source 7 is connected to the first pole plate 4, the other end ground connection of DC source 7；One end of radio-frequency power supply 8 is connected to
Two pole plates 5, the other end ground connection of radio-frequency power supply 8；Substrate 6 is arranged on the second pole plate 5 and positioned at the table relative with the first pole plate 4
Face；Air inlet 2 is arranged on the side of plasma discharge cavity room 1, and gas outlet 3 is arranged on the another of plasma discharge cavity room 1
Side, the magnetic field that magnetic field generator 9 is arranged on outside plasma discharge cavity room 1 and produces is parallel to the first pole plate 4 and the second pole plate
5。
Wherein, plasma discharge cavity room 1 provides vacuum environment for gas discharge, and air inlet 2 is used for being passed through reacting gas,
Gas outlet 3 is used for taking waste gas away, and between the first pole plate 4 and the second pole plate 5, region occurs gas discharge and produces plasma, serves as a contrast
Bottom 6 is silicon chip or other pending materials, and the plasma of generation can be etched to which or be sputtered, produced by DC source 7
Negative electricity pressure energy secondary electron is induced from pole plate, so as to increase plasma density, radio-frequency power supply 8 is used for producing and maintaining
Plasma discharge, the magnetic field energy constraint plasma parallel to the first pole plate 4 and the second pole plate 5 that magnetic field generator 9 is produced
Motion, so as to reduce the loss on pole plate and wall.
Used as one embodiment of the present of invention, the distance between the first pole plate 4 and the second pole plate 5 L is 1 centimetre～10 lis
Rice.
Magnetization capacitively coupled plasma source shown in Fig. 2 includes：Plasma discharge cavity room 1, air inlet 2, gas outlet
3rd, the first pole plate 4, the second pole plate 5, substrate 6, DC source 7, radio-frequency power supply 8 and magnetic field generator 9, the first pole plate 4 and second
Pole plate 5 is arranged in parallel in plasma discharge cavity room 1, and one end of DC source 7 is connected to the first pole plate 4, unidirectional current
The other end ground connection in source 7；One end of radio-frequency power supply 8 is connected to the second pole plate 5, the other end ground connection of radio-frequency power supply 8；Substrate 6 sets
Put on the first pole plate 4 and positioned at the surface relative with the second pole plate 5；Air inlet 2 is arranged on the one of plasma discharge cavity room 1
Side, gas outlet 3 are arranged on the opposite side of plasma discharge cavity room 1, and magnetic field generator 9 is arranged on plasma discharge cavity room 1
The magnetic field of outer and generation is parallel to the first pole plate 4 and the second pole plate 5.
Wherein, in plasma discharge cavity room 1, chamber is evacuated environment by gas outlet 3, air inlet 2 is passed through instead
Gas is answered, while gas outlet 3 takes waste gas away, DC source 7 and radio-frequency power supply 8 connect the first pole plate 4 and the second pole plate 5 respectively,
And voltage drop is formed between the first pole plate 4 and the second pole plate 5, the voltage can puncture reacting gas so as to produce plasma,
And the plasma that laboratory is produced can not be controlled oneself（Plasma can be lost on pole plate and wall）, radio-frequency power supply 8 is continuous to be added
So as to produce stable plasma source, the negative electricity pressure energy produced by DC source 7 is induced from pole plate hot plasma
Secondary electron, so as to increase plasma density, magnetic field generator 9 produce parallel to the first pole plate 4 and the magnetic of the second pole plate 5
Field energy fetters plasma motion, and so as to reduce the loss on pole plate and wall, substrate 6 is silicon chip or other pending materials
Material, the plasma of generation can be etched to which or be sputtered.
In order to ion beam current is drawn from chamber, the ion beam current can be used for various types of ion accelerators, mass spectrograph,
Neutrality in calutron, ion implantation apparatuses, ion beam etching device, ion propeller and controlled fusion device
The equipment such as beam infusion appliance（In other words：In order to ion beam current is drawn from chamber, the ion beam current can be used as all kinds equipment
Ion source）；Present invention also offers magnetization capacitively coupled plasma source as shown in Figure 3, including：Plasma discharge cavity room
1st, air inlet 2, gas outlet 3, the first pole plate 4, the second pole plate 5, DC source 7, radio-frequency power supply 8, magnetic field generator 9, perforate 10
With extraction electrode 11, the first pole plate 4 and the second pole plate 5 it is arranged in parallel in plasma discharge cavity room 1, DC source 7
One end be connected to the first pole plate 4, the other end ground connection of DC source 7；One end of radio-frequency power supply 8 is connected to the second pole plate 5, penetrates
The other end ground connection of frequency power 8；Air inlet 2 is arranged on the side of plasma discharge cavity room 1, and gas outlet 3 is arranged on plasma
Body discharges the opposite side of chamber 1, and magnetic field generator 9 is arranged on that plasma discharge cavity room 1 is outer and the magnetic field that produces is parallel to the
One pole plate 4 and the second pole plate 5；Opening opens a perforate 10 in either side wall, connects extraction electrode 11.
The specific embodiment of the magnetization capacitively coupled plasma source application of the radio frequency and direct current combination drive has various
Example.In following instance, only example 1 opens side-wall hole 10, and connects extraction electrode 11.
Example 1：With reference to the structure of Fig. 3；Hydrogen is passed through in plasma chamber 1, air pressure control is arrived in 10mTorr
In 1Torr is interval, the first pole plate 4 accesses negative DC source 7, and the second pole plate 5 accesses radio-frequency power supply 8, chamber or sidewall ground,
Hot-wire coil or permanent magnet are placed outside chamber to produce the magnetic field parallel to pole plate.Gas under direct current and the action of a magnetic field is put
Electric energy produces a large amount of hydrions.Side-wall hole 10 is opened, is connected extraction electrode 11, ion beam current is drawn from chamber, the ion
Source can be widely applied to various types of ion accelerators, mass spectrograph, calutron, ion implantation apparatuses, ion beam
The equipment such as the neutral-beam injector in etching device, ion propeller and controlled fusion device.
Example 2：With reference to the structure of Fig. 1；Carbon fluorine gas are passed through in plasma chamber 1（Such as carbon tetrafluoride）, oxygen and
The mixed gas of argon, in about 10mTorr -100mTorr are interval, the first pole plate 4 accesses negative DC source 7 for air pressure control,
Second pole plate 5 accesses radio-frequency power supply 8, and substrate 6 is placed on the second pole plate 5, chamber or sidewall ground, and live wire is placed outside chamber
Enclose or permanent magnet 9 is to produce the magnetic field parallel to pole plate.The high-density plasma source that mixed gas discharge is produced can meet
MEMS etc. etches the requirement of manufacturing process, and MEMS generally adopts the material based on polysilicon, this plasma source provide
Very high etch rate.
Example 3：With reference to the structure of Fig. 1；Be passed through silane in plasma chamber 1, air pressure control 300mTorr-
In 1Torr is interval, the first pole plate 4 accesses negative DC source 7, and the second pole plate 5 accesses radio-frequency power supply 8, and substrate 6 is placed in the second pole
Plate 5, chamber or sidewall ground, place hot-wire coil or permanent magnet 9 to produce the magnetic field parallel to pole plate outside chamber.Produce
The plasma source of high density and energy-controllable can be used for plasma foil deposition, and the technology is widely used in extensive life
In the industries such as the amorphous silicon film photovoltaic solaode of product, the thin film transistor (TFT) of flat faced display.
Example 4：With reference to the structure of Fig. 1；Be passed through argon in plasma chamber 1, air pressure control 1mTorr-
In 10mTorr is interval, the first pole plate 4 accesses negative DC source 7, and adopts titanium or aluminum as target, and the second pole plate 5 connects
Enter radio-frequency power supply 8, substrate 6 is placed in the second pole plate 5, chamber or sidewall ground, hot-wire coil or permanent magnet 9 are placed outside chamber with
Produce the magnetic field parallel to pole plate.The argon ion that electric discharge is produced is incided on target material, and target atom is sputtered out to flow to substrate
And deposit on substrate, the sputtering technology is usually used in interconnection between depositing electrode or microelectronic component etc..
Example 5：With reference to the structure of Fig. 2；Argon or other gases are passed through in plasma chamber 1, the first pole plate 4 is accessed
Negative DC source 7, the second pole plate 5 access radio-frequency power supply 8, and substrate 6 is placed in the first pole plate 4, chamber or sidewall ground, in chamber
It is outer to place hot-wire coil or permanent magnet to produce the magnetic field parallel to pole plate.The ion that electric discharge is produced is lied prostrate or tens kilovolts thousands of
DC source effect under be accelerated on substrate 6 so as to the atom component and structure of near-surface region changes, thus changes
Become the surface property of material.Ion implanting is widely used in that metal material is modified, surface Hardening Treatment, field of semiconductor processing
In improvement with ceramics, glass, complex, mineral and plant seed.
The present invention is not limited to above example, and preferable plasma source can be obtained by the component of adjusting means.By
Several examples are visible above, and the magnetization capacitively coupled plasma source of radio frequency and direct current combination drive is widely used in material list
The field such as face process, ion source, the etching in microelectronic technique and deposition.
As shown in figure 4, the figure is the plasma density figure under different situations, solid line is tradition CCP sources, and dotted line is radio frequency
With the CCP sources of direct current combination drive（Only add DC source i.e. on traditional CCP）, point solid line is magnetization CCP sources（I.e. in tradition
CCP is upper only to add magnetic field）, point point solid line is the magnetization CCP sources of radio frequency and direct current combination drive（As the present invention carried in tradition
On CCP plus DC source and magnetic field）.The density in traditional CCP sources is about 1016～1017m-3, and radio frequency and direct current combination drive
Magnetization CCP source densities are about 1019～1020m-3, its plasma density arrived than the plasma density high two in tradition CCP sources
Three magnitudes, and maintain simple traditional CCP source devices, low cost and manageable advantage.
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, not to
The present invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc. are limited, all should be included
Within protection scope of the present invention.
Claims (8)
1. the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, it is characterised in that include：Plasma
Electric discharge chamber (1), air inlet (2), gas outlet (3), the first pole plate (4), the second pole plate (5), substrate (6), DC source (7),
Radio-frequency power supply (8) and magnetic field generator (9)；
First pole plate (4) and second pole plate (5) are arranged in parallel in plasma discharge cavity room (1), described
One end of DC source (7) is connected to the first pole plate (4), the other end ground connection of the DC source (7)；The radio-frequency power supply
(8) one end is connected to second pole plate (5), the other end ground connection of the radio-frequency power supply (8)；The substrate (6) is arranged on
On second pole plate (5) and positioned at the surface relative with the first pole plate (4)；The air inlet (2) is arranged on plasma and puts
The side of electric chamber (1), the gas outlet (3) are arranged on the opposite side of plasma discharge cavity room (1), magnetic field generator (9)
The magnetic field for being arranged on plasma discharge cavity room (1) outward and producing is parallel to the first pole plate (4) and the second pole plate (5).
2. it is as claimed in claim 1 to magnetize capacitively coupled plasma source, it is characterised in that during work, to put in plasma
In electric chamber (1), chamber is evacuated environment by gas outlet (3), air inlet (2) is passed through reacting gas, while gas outlet (3)
Take waste gas away；There is on the first pole plate (4) being connected with DC source (7) negative voltage, the second pole being connected with radio-frequency power supply (8)
There is on plate (5) radio-frequency voltage, and voltage drop be formed between first pole plate (4) and second pole plate (5), the voltage
Reacting gas can be punctured so as to produce plasma；As the radio-frequency power supply (8) is constantly caused to the plasma heating
Stable plasma source, and first pole plate are defined between first pole plate (4) and second pole plate (5)
(4) the negative electricity pressure energy on induces secondary electron from first pole plate (4) and second pole plate (5), so as to increase
Plasma density；The magnetic field generator (9) produce parallel to first pole plate (4) and the magnetic of second pole plate (5)
Field energy fetters plasma motion, reduces loss of the plasma on pole plate and wall；Substrate (6) is placed on second
On pole plate and positioned at the surface relative with the first pole plate, the plasma of generation can be etched to which, deposits or be sputtered.
3. the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, it is characterised in that include：Plasma
Electric discharge chamber (1), air inlet (2), gas outlet (3), the first pole plate (4), the second pole plate (5), substrate (6), DC source (7),
Radio-frequency power supply (8) and magnetic field generator (9)；
First pole plate (4) and second pole plate (5) are arranged in parallel in plasma discharge cavity room (1), described
One end of DC source (7) is connected to the first pole plate (4), the other end ground connection of the DC source (7)；The radio-frequency power supply
(8) one end is connected to second pole plate (5), the other end ground connection of the radio-frequency power supply (8)；The substrate (6) is arranged on
On first pole plate (4) and positioned at the surface relative with the second pole plate (5)；The air inlet (2) is arranged on plasma and puts
The side of electric chamber (1), the gas outlet (3) are arranged on the opposite side of plasma discharge cavity room (1), magnetic field generator (9)
The magnetic field for being arranged on plasma discharge cavity room (1) outward and producing is parallel to the first pole plate (4) and the second pole plate (5).
4. it is as claimed in claim 3 to magnetize capacitively coupled plasma source, it is characterised in that during work, to put in plasma
In electric chamber (1), chamber is evacuated environment by gas outlet (3), air inlet (2) is passed through reacting gas, while gas outlet (3)
Take waste gas away, there is on the first pole plate (4) being connected with DC source (7) negative voltage, the second pole being connected with radio-frequency power supply (8)
There is on plate (5) radio-frequency voltage, and voltage drop be formed between first pole plate (4) and second pole plate (5), the voltage
Reacting gas can be punctured so as to produce plasma；As the radio-frequency power supply (8) is constantly caused to the plasma heating
Stable plasma source, and first pole plate are defined between first pole plate (4) and second pole plate (5)
(4) the negative electricity pressure energy on induces secondary electron from first pole plate (4) and second pole plate (5), so as to increase
Plasma density；The magnetic field generator (9) produce parallel to first pole plate (4) and the magnetic of second pole plate (5)
Field energy fetters plasma motion, reduces loss of the plasma on pole plate and wall；Substrate (6) is placed on first
On pole plate and positioned at the surface relative with the second pole plate (5), the ion of generation accelerates to substrate in the presence of DC source (7)
(6), on, ion implanting can be carried out to which.
5. the magnetization capacitively coupled plasma source of a kind of radio frequency and direct current combination drive, it is characterised in that include：Plasma
Electric discharge chamber (1), air inlet (2), gas outlet (3), the first pole plate (4), the second pole plate (5), DC source (7), radio-frequency power supply
(8), magnetic field generator (9), perforate (10) and extraction electrode (11)；
First pole plate (4) and second pole plate (5) are arranged in parallel in the plasma discharge cavity room (1),
One end of the DC source (7) is connected to first pole plate (4), the other end ground connection of the DC source (7)；It is described to penetrate
One end of frequency power (8) is connected to second pole plate (5), the other end ground connection of the radio-frequency power supply (8)；The air inlet
(2) side of the plasma discharge cavity room (1) is arranged on, the gas outlet (3) is arranged on the plasma discharge cavity
The opposite side of room (1), the magnetic field generator (9) be arranged on plasma discharge cavity room (1) outward and produce magnetic field parallel to
First pole plate (4) and second pole plate (5)；Open up on the plasma discharge cavity room (1) the arbitrarily wall of side
There is a perforate (10), extraction electrode (11) is connected with the perforate (10).
6. it is as claimed in claim 5 to magnetize capacitively coupled plasma source, it is characterised in that during work, to put in plasma
In electric chamber (1), chamber is evacuated environment by gas outlet (3), air inlet (2) is passed through reacting gas, while gas outlet (3)
Take waste gas away, there is on the first pole plate (4) being connected with DC source (7) negative voltage, the second pole being connected with radio-frequency power supply (8)
There is on plate (5) radio-frequency voltage, and voltage drop be formed between first pole plate (4) and second pole plate (5), the voltage
Reacting gas can be punctured so as to produce plasma；As the radio-frequency power supply (8) is constantly caused to the plasma heating
Stable plasma source, and first pole plate are defined between first pole plate (4) and second pole plate (5)
(4) the negative electricity pressure energy on induces secondary electron from first pole plate (4) and second pole plate (5), so as to increase
Plasma density；The magnetic field generator (9) produce parallel to first pole plate (4) and the magnetic of second pole plate (5)
Field energy fetters plasma motion, reduces loss of the plasma on pole plate and wall；The a large amount of ions for producing are being drawn
It is brought out by perforate (10) in the presence of electrode (11), can be used as the ion source of various equipment.
7. the magnetization capacitively coupled plasma source as described in any one of claim 1-6, it is characterised in that the magnetic field occurs
Device (9) is hot-wire coil or permanent magnet.
8. the magnetization capacitively coupled plasma source as described in any one of claim 1-7, it is characterised in that first pole plate
And the distance between second pole plate (5) L is 1 centimetre～10 centimetres (4).
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