CN108573846A - Plasma chamber and plasma processing device - Google Patents
Plasma chamber and plasma processing device Download PDFInfo
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- CN108573846A CN108573846A CN201710137713.6A CN201710137713A CN108573846A CN 108573846 A CN108573846 A CN 108573846A CN 201710137713 A CN201710137713 A CN 201710137713A CN 108573846 A CN108573846 A CN 108573846A
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- plasma
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- plasma chamber
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- 238000012545 processing Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000005284 excitation Effects 0.000 claims abstract description 22
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000019643 circumnutation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001727 in vivo Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of plasma chambers, including：Plasma generating device, plasma generating device is arranged at the top of cavity, for the process gas in excitation cavity body to generate plasma；Auxiliary plasma generation device, auxiliary plasma generation device are arranged in cavity wall, for generating magnetic field in the cavity to improve the density of plasma in cavity.The present invention also provides a kind of plasma processing devices with the plasma chamber.The plasma chamber and plasma processing device of the present invention, due to being provided with auxiliary plasma generation device, therefore the density of plasma in cavity can be improved, thus suitable for the plasma application under a variety of situations, so as to improve the applicability and practicability of plasma chamber.
Description
Technical field
The invention belongs to microelectronic processing technique fields, and in particular to a kind of plasma chamber and plasma process are set
It is standby.
Background technology
With the development of semiconductor process technique, plasma etching or depositing device have spread all over major manufacture of semiconductor production
Line.The operation principle of plasma etching or deposition is mainly：Process gas is passed through in vacuum chamber, electric excitation or light are passed through
Process gas is dissociated, is excited, is ionized by energisation mode, and the free radical or ion being ionized are added by free diffusing or field
Speed interacts to crystal column surface and with wafer material, etches or deposits accordingly to carry out.
Complicated semiconductor technology, often etches with different semi-conducting materials and deposition, the physics of different materials and
Differing chemical properties, therefore the physical and chemical properties of plasma have different demands.By taking plasma dry etch as an example,
Its etachable material can be divided into monocrystal material (such as silicon Si) and compound-material (such as SiO2), two kinds of materials are because of its different physics and change
Property is learned, difference, SiO are showed in etching process2It needs to first pass through the energetic ion in plasma during the reaction
Bombardment carries out ionization and is formed after Si monomers again by etching similar reaction process with Si, therefore two in plasma etch process
The physics of kind material plasma is different with performance requirement is changed.
For better adapt to for different semi-conducting materials and the physics of plasma with to change performance requirement different, develop
A variety of plasma systems, mainly have inductive coupling ICP, capacitive coupling CCP, the two ways is mainly by using different
The etching of different materials is realized in RF excited source, can also realize the quarter of different materials by optimization, improved structure design
Erosion demand.Fig. 1 is the structural schematic diagram of inductively coupled plasma chamber, referring to Fig. 1, it mainly passes through inductance coil 4
It couples in chamber the rf power signal that radio-frequency power supply 1 generates to by adaptation 2, inlet duct 3 is delivered to chamber
Interior process gas excites to form plasma 6, which can react to substrate 5 to realize etching；Fig. 2 is to hold
The structural schematic diagram of property coupled plasma chamber, referring to Fig. 2, it is compared to Figure 1, there is no induction coils, pass through conduction
Material layer 7 couples in chamber the rf power signal that radio-frequency power supply 1 exports to by adaptation, and inlet duct 3 is conveyed
It excites to form plasma 6 to the indoor process gas of chamber.
However, in practical applications, no matter being filled using Fig. 1 or plasma chamber shown in Fig. 2, plasma
Set only there are one, generate plasma density after reaching a certain level, cannot continue to improve, controllability is small, just
The plasma application under a variety of situations cannot be met, specific certain limitation, therefore, existing plasma chamber is applicable in
Property and practicability are poor.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of plasma chamber
And plasma processing device, auxiliary plasma generation device is increased, the density of plasma is improved, thus can be applicable in
Plasma application under a variety of situations, so as to improve the applicability and practicability of plasma chamber.
One of in order to solve the above problem, the present invention provides a kind of plasma chambers, including：
Plasma generating device, the plasma generating device are arranged at the top of cavity, in excitation cavity body
Process gas is to generate plasma；
Auxiliary plasma generation device, the auxiliary plasma generation device setting is in cavity wall, in chamber
Magnetic field is generated in vivo to improve the density of plasma in cavity.
Preferably, the auxiliary plasma generation device includes：
Solenoid, the solenoid is circumferentially positioned at the inside of the cavity wall, and has one with the cavity wall
Determining deviation；
Excitation power supply, the excitation power supply and solenoid electrical connection, for providing power signal to the solenoid
So that the solenoid generates magnetic field.
Preferably, the plasma chamber further includes：
Medium cylinder, the medium cylinder is circumferentially positioned at the inside of the cavity wall, and has one with the cavity wall
Determining deviation, the solenoid are arranged between the outer wall and the inner wall of the cavity wall of the medium cylinder.
Preferably, the excitation power supply is DC power supply.
Preferably, the excitation power supply is radio-frequency power supply.
Preferably, impedance-matching device, the impedance matching dress are set between the radio-frequency power supply and the solenoid
It sets and is electrically connected respectively with the two.
Preferably, the excitation power supply includes DC power supply and radio-frequency power supply, wherein in the excitation power supply and the spiral shell
Selecting switch is set between spool, the solenoid and the radio-frequency power supply or the DC power supply are made by the selecting switch
It is electrically connected.
Preferably, the upper area in cavity wall, and and plasma is arranged in the auxiliary plasma generation device
Generating region is correspondingly arranged.
Preferably, the plasma generating device includes：
Capacitance coupling plasma generation device, inductively coupled plasma generation device, surface wave plasma generate
Device and Ecr plasma generation device.
The present invention also provides a kind of plasma processing device, including plasma chamber, the plasma chamber is adopted
With the plasma chamber of the above-mentioned offer of the present invention.
The invention has the advantages that：
In the present invention, by the auxiliary plasma generation device being arranged in cavity wall generate in the cavity magnetic field with
The density for improving plasma in cavity, can improve the maximal density for the plasma that can be obtained, thus can be adapted for
Plasma application under a variety of situations, so as to improve the applicability and practicability of plasma chamber.
Description of the drawings
Fig. 1 is the structural schematic diagram of inductively coupled plasma chamber；
Fig. 2 is the structural schematic diagram of capacitively coupled plasma chamber；
Fig. 3 a are the structural schematic diagram for the plasma chamber that the embodiment of the present invention 1 provides；
Fig. 3 b are solenoidal front view in Fig. 3 a；
Fig. 3 c are the Distribution of Magnetic Field schematic diagram that solenoid generates in the chamber in Fig. 3 a；
Fig. 4 is the structural schematic diagram for the plasma chamber that the embodiment of the present invention 2 provides；
Fig. 5 is the structural schematic diagram for the plasma chamber that the embodiment of the present invention 3 provides.
The reference numeral of the prior art includes：1, radio-frequency power supply；2, adaptation；3, inlet duct；4, inductance coil；5, base
Piece；6, plasma；7, conductive material layer.
The present invention reference numeral include：10, plasma generating device；20, auxiliary plasma generation device；201,
Solenoid；15, medium cylinder；202, DC power supply；16, magnetic field；17, electron stream；18, track；2031, the first radio-frequency power supply；
2032, the first impedance-matching device；204, selecting switch；101, the second radio-frequency power supply；102, the second impedance-matching device；103,
Induction coil；30, plasma；40, inlet duct；50, pedestal；601, third radio-frequency power supply；602, third impedance matching dress
It sets.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
The plasma chamber and plasma processing device of offer are described in detail.
Embodiment 1
Fig. 3 a are the structural schematic diagram for the plasma chamber that the embodiment of the present invention 1 provides；Fig. 3 b are solenoid in Fig. 3 a
Front view；Fig. 3 c are the Distribution of Magnetic Field schematic diagram that generates in the chamber of solenoid in Fig. 3 a, also referring to Fig. 3 a~Fig. 3 c,
A kind of plasma chamber that the embodiment of the present invention 1 provides, including：Plasma generating device 10 and auxiliary plasma generate
Device 20.Wherein, plasma generating device 10, plasma generating device 10 is arranged at the top of cavity, for exciting cavity
Interior process gas is to generate plasma 30.Wherein, process gas can be, but not limited to by be arranged on chamber roof into
Device of air 40 is delivered in chamber.
Auxiliary plasma generation device 20, the setting of auxiliary plasma generation device 20 is in cavity wall, in chamber
Magnetic field is generated in vivo to improve the density of plasma in cavity.
In the present invention, magnetic field is generated in the cavity by the auxiliary plasma generation device 20 being arranged in cavity wall
To improve the density of plasma in cavity, the maximal density for the plasma that can be obtained can be improved, thus can be applicable in
Plasma application under a variety of situations, so as to improve the applicability and practicability of plasma chamber.
Preferably, the upper area in cavity wall is arranged in auxiliary plasma generation device 20, and is produced with plasma
Raw region is correspondingly arranged, in such manner, it is possible to effectively improve the density of plasma in plasma generating area.
In one embodiment, auxiliary plasma generation device 20 includes：Solenoid 201 and excitation power supply, helical
Pipe 201 is circumferentially positioned on the inside of cavity wall, and at regular intervals with cavity wall tool；Excitation power supply and solenoid 201 are electrically connected
It connects, for providing power signal to solenoid 201 so that solenoid 201 generates magnetic field.Have by solenoid 201 and cavity wall
It is at regular intervals, it is contacted with the chamber of ground connection to avoid solenoid 201.
Also specifically, plasma chamber further includes：Medium cylinder 15, medium cylinder 15 are circumferentially positioned on the inside of chamber inner wall,
And it is at regular intervals with chamber inner wall tool, solenoid 201 is arranged between the outer wall of medium cylinder and the inner wall of cavity wall.By
Medium cylinder 15 can be such that 201 place space of solenoid and state space keeps apart, to not only avoid solenoid 201 in technique sky
Between carry out pollution effect processing quality, but also state space can be easy to implement as vacuum environment and empty where solenoid 201
Between be atmospheric environment.
In another specific embodiment, excitation power supply is DC power supply 202, and the magnetic field that DC power supply 202 generates can be about
Beam plasma, as shown in Figure 3c, when the plasma that plasma generating device 10 generates diffuses through magnetic field 16 downwards,
Electron stream 17 can be by the effect in magnetic field 16, that is, does circumnutation along track 18 under Lorentz force effect, does circumnutation
Electronics passes through further hits against dissociation with gas, therefore, on the one hand can generate more highdensity plasma by collision, favorably
In the demand for meeting etch rate (including free radical and ion etching) more demanding technique；On the other hand, after collision
Electron energy reduce, be conducive to reduce substrate surface thermoelectron induced damage, be conducive to meet to crystal column surface damage require compared with
The demand of high technique.
In practical applications, plasma can be adjusted by adjusting the DC current that DC power supply 202 generates, to meet more
The demand of plasma application under more different situations；In addition, can also by adjust the number of turns of solenoid 201, turn-to-turn away from and/or
The position that is vertically arranged on side wall adjusts plasma, to meet the needs of plasma application under more different situations.
In another embodiment, the excitation power supply of auxiliary plasma generation device 20 is radio-frequency power supply, referred to herein as
First radio-frequency power supply 2031, the rf power signal that the first radio-frequency power supply 2031 is used to be generated are coupling in chamber through solenoid
Interior, plasma is further ionized.Specifically, the first radio-frequency power supply 2031 can generate alternating electromagnetic field in chamber
Plasma 30 carries out double ionization, so that process gas more fully ionizes, therefore, can get more highdensity plasma
Body is conducive to the demand for meeting etch rate (including free radical and ion etching) more demanding technique, in addition radio-frequency power supply
The work for there are different requirements to etch rate can be met such as high frequency, very high frequency(VHF) and low frequency using the RF excited of different frequency
Skill, thus can be adapted for the plasma application under a variety of situations, so as to improve plasma chamber applicability and
Practicability.
In practical applications, the size and frequency for the rf power signal that the first radio-frequency power supply 2031 of adjusting generates can be passed through
Plasma is adjusted, meeting the needs of plasma application under more different situations.Specifically, can according to process requirements,
The double ionization that different depth can be carried out using the first radio-frequency power supply 2031 of different frequency or size, to obtain different densities
Plasma meets the process requirements more demanding to etch rate (including free radical and ion etching).
Preferably, as shown in figure 4, impedance is arranged between solenoid 201 in radio-frequency power supply (the first radio-frequency power supply 2031)
Coalignment (referred to herein as the first impedance-matching device 2032), impedance-matching device is electrically connected with the two respectively, is used
It is matched in the characteristic impedance of radio-frequency power supply and load impedance.
In another specific embodiment, the excitation power supply of auxiliary plasma generation device 20 includes 202 He of DC power supply
Radio-frequency power supply (referred to herein as the first radio-frequency power supply 2031)；Also, setting selection is opened between excitation power supply and solenoid 201
204 are closed, so that solenoid 201 is electrically connected with the first radio-frequency power supply 2031 or DC power supply 202 by selecting switch 204.Tool
Body, selecting switch 204 includes but not limited to relay.Moreover, being arranged between the first radio-frequency power supply 2031 and solenoid 201
First impedance-matching device 2032.According to actual demand, by selecting switch 204 selectively with the first radio-frequency power supply 2031 or
DC power supply 202 is electrically connected with solenoid 201, in this way, DC power box radio-frequency power supply can be used selectively, is further applicable in
Plasma application under a variety of situations.
In above-mentioned multiple embodiments, plasma generating device 10 is inductance coupled plasma device.It specifically includes：
Second radio-frequency power supply 101, the second impedance-matching device 102 and induction coil 103, wherein induction coil 103 is arranged in chamber
Above roof, the rf power signal that second radio-frequency power supply 101 generates is filled by the second impedance matching by induction coil 103
It sets 102 to be coupled in chamber, inlet duct 40, which is delivered to the indoor process gas of chamber, to be excited to form plasma 30.
It should be noted that, although in above-mentioned multiple embodiments, plasma generating device 10 be inductive coupling etc. from
Daughter device.But the present invention is not limited thereto, in practical applications, plasma generating device 10 can also be capacitance
Coupled plasma apparatus, inductance coupled plasma device, surface wave plasma generation device and electron cyclotron resonace etc.
Gas ions generation device etc., or plasma generating device used by physical vapour deposition (PVD) CVD chamber.
In above-mentioned multiple embodiments, plasma chamber further includes：The third being connected with the pedestal 50 of carrying substrates is penetrated
Frequency power 601, to generate back bias voltage in substrate surface, to attract plasma towards substrate motion.Preferably, further include
Three impedance-matching devices 602, third radio-frequency power supply 601 are connected by third impedance-matching device 602 with pedestal 50.
Also specifically, pedestal 50 fixes substrate by the way of Electrostatic Absorption, can fix substrate well in this way.When
So, the present invention is not limited thereto, in practical applications, other modes can also be used to fix substrate.
Embodiment 2
The embodiment of the present invention also provides a kind of plasma processing device, including plasma chamber, the plasma
Chamber uses the plasma chamber that the above embodiment of the present invention 1 provides.
Plasma processing device includes but not limited to depositing device and etching apparatus.
The embodiment of the present invention provides plasma processing device, due to using the above embodiment of the present invention 1 provide it is equal from
Daughter chamber, therefore, can improve the plasma application existing in the prior art to complexity has the problem of certain limitation.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of plasma chamber, which is characterized in that including：
Plasma generating device, the plasma generating device are arranged at the top of cavity, for the technique in excitation cavity body
Gas is to generate plasma；
Auxiliary plasma generation device, the auxiliary plasma generation device setting is in cavity wall, in the cavity
Magnetic field is generated to improve the density of plasma in cavity.
2. plasma chamber according to claim 1, which is characterized in that the auxiliary plasma generation device packet
It includes：
Solenoid, the solenoid are circumferentially positioned at the inside of cavity wall, and at regular intervals with cavity wall tool；
Excitation power supply, the excitation power supply and the solenoid electrical connection, for the solenoid provide power signal so that
The solenoid generates magnetic field.
3. plasma chamber according to claim 2, which is characterized in that the plasma chamber further includes：
Medium cylinder, the medium cylinder are circumferentially positioned at the inside of the cavity wall, and with the cavity wall have it is certain between
Away from the solenoid is arranged between the outer wall and the inner wall of the cavity wall of the medium cylinder.
4. plasma chamber according to claim 2 or 3, which is characterized in that the excitation power supply is DC power supply.
5. plasma chamber according to claim 2 or 3, which is characterized in that the excitation power supply is radio-frequency power supply.
6. plasma chamber according to claim 5, which is characterized in that the radio-frequency power supply and the solenoid it
Between impedance-matching device is set, the impedance-matching device is electrically connected with the two respectively.
7. plasma chamber according to claim 2 or 3, which is characterized in that the excitation power supply includes DC power supply
And radio-frequency power supply, wherein
Selecting switch is set between the excitation power supply and the solenoid, by the selecting switch make the solenoid with
The radio-frequency power supply or the DC power supply are electrically connected.
8. plasma chamber according to claim 1, which is characterized in that the auxiliary plasma generation device setting
It is correspondingly arranged in the upper area of cavity wall, and with plasma generating area.
9. plasma chamber according to claim 1, which is characterized in that the plasma generating device includes：
Capacitance coupling plasma generation device, inductively coupled plasma generation device, surface wave plasma generation device
With Ecr plasma generation device.
10. a kind of plasma processing device, including plasma chamber, which is characterized in that the plasma chamber uses
Plasma chamber described in any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710137713.6A CN108573846A (en) | 2017-03-09 | 2017-03-09 | Plasma chamber and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710137713.6A CN108573846A (en) | 2017-03-09 | 2017-03-09 | Plasma chamber and plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108573846A true CN108573846A (en) | 2018-09-25 |
Family
ID=63577863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710137713.6A Pending CN108573846A (en) | 2017-03-09 | 2017-03-09 | Plasma chamber and plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108573846A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192812A (en) * | 2020-01-07 | 2020-05-22 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| CN111328174A (en) * | 2018-12-17 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma generating method |
| WO2022143120A1 (en) * | 2021-01-04 | 2022-07-07 | 江苏鲁汶仪器有限公司 | Ion source device with adjustable plasma density |
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| US5662819A (en) * | 1994-02-10 | 1997-09-02 | Sony Corporation | Plasma processing method with controlled ion/radical ratio |
| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| KR20080074300A (en) * | 2007-02-08 | 2008-08-13 | 세메스 주식회사 | Plasma processing apparatus |
| CN104241070A (en) * | 2013-06-24 | 2014-12-24 | 中微半导体设备(上海)有限公司 | Gas injection device used for inductively couple plasma chamber |
| CN104862671A (en) * | 2014-02-24 | 2015-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing device |
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2017
- 2017-03-09 CN CN201710137713.6A patent/CN108573846A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5662819A (en) * | 1994-02-10 | 1997-09-02 | Sony Corporation | Plasma processing method with controlled ion/radical ratio |
| CN1265222A (en) * | 1997-04-21 | 2000-08-30 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
| KR20080074300A (en) * | 2007-02-08 | 2008-08-13 | 세메스 주식회사 | Plasma processing apparatus |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111328174A (en) * | 2018-12-17 | 2020-06-23 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma generating method |
| CN111192812A (en) * | 2020-01-07 | 2020-05-22 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| WO2022143120A1 (en) * | 2021-01-04 | 2022-07-07 | 江苏鲁汶仪器有限公司 | Ion source device with adjustable plasma density |
| CN114724911A (en) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | Ion source device with adjustable plasma density |
| TWI845878B (en) * | 2021-01-04 | 2024-06-21 | 大陸商江蘇魯汶儀器有限公司 | Ion source device with adjustable plasma density |
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Application publication date: 20180925 |