CN110197785A - A kind of etch system and preparation method preparing anti-glare glass - Google Patents
A kind of etch system and preparation method preparing anti-glare glass Download PDFInfo
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- CN110197785A CN110197785A CN201910540494.5A CN201910540494A CN110197785A CN 110197785 A CN110197785 A CN 110197785A CN 201910540494 A CN201910540494 A CN 201910540494A CN 110197785 A CN110197785 A CN 110197785A
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- etch system
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- plate
- etch
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- 239000011521 glass Substances 0.000 title claims abstract description 123
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000004313 glare Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000013003 hot bending Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
A kind of etch system and preparation method preparing anti-glare glass, the interior etch system is in vacuum state, and the etch system includes: the first power supply；Electrode assembly is set to the side of glass substrate to drive plasma to strike against on glass substrate；Air supply source, to be connected with electrode assembly to provide gas atom；The electrode assembly is formed with accommodating chamber and includes: anode plate and cathode plate, it is arranged in parallel with the side of glass substrate and anode plate is arranged closer to glass substrate, the anode plate and cathode plate are electrically connected respectively with the anode and cathode of the first power supply to provide electronics；The outlet of connection accommodating chamber is offered on the anode plate to allow plasma to pass through, and the entrance of connection accommodating chamber and air supply source is offered on the cathode plate；First magnetic sheet and the second magnetic sheet, magnetic pole is opposite and is connected between anode plate and cathode plate, and first magnetic sheet and the second magnetic sheet are arranged perpendicular to anode plate to drive electron motion and hit gas atom to form plasma.
Description
Technical field
The invention belongs to electroetching field, especially a kind of etch system for being used to prepare anti-glare glass and preparation side
Method.
Background technique
Glare is a kind of generally existing phenomenon of nature, can generate many obstacles to the activity of people, or even can be to people
Vision generates injury.Particularly, in vehicle going at night, light when meeting is boundling light, and the glare shone into vehicle makes
It obtains driver to be difficult to see the object in front clearly, this is abnormally dangerous for vehicle drive.And daytime is when driving, if sunlight is too
When strongly, in face of the direction running of daylight, it also will appear glare under certain angle.
In the prior art, it usually prepares on anti-glazing optical thin film and attaching and glass, such as passes through printing, chemical attack
The methods of.But usually the process is more complicated for the above method, and precision not can guarantee.
Therefore, it is necessary to design etch system and the preparation side of one kind anti-glare glass that cost is relatively low, technique is relatively simple
Method.
Summary of the invention
One of in order to solve the above problem, the present invention provides a kind of etch systems for preparing anti-glare glass, to glass
Glass substrate is etched to form anti-glare glass, is in vacuum state in the etch system, the etch system includes: first
Power supply；Electrode assembly is set to the side of glass substrate to drive plasma to strike against on glass substrate；Air supply source, to
Electrode assembly is connected to provide gas atom；The electrode assembly is formed with accommodating chamber and includes: anode plate and cathode plate,
It is arranged in parallel with the side of glass substrate and anode plate is arranged closer to glass substrate, the anode plate and cathode plate are respectively with the
The anode and cathode of one power supply are electrically connected to provide electronics；The outlet of connection accommodating chamber is offered on the anode plate to allow
Ion passes through, and the entrance of connection accommodating chamber and air supply source is offered on the cathode plate；First magnetic sheet and the second magnetic sheet, magnetic pole phase
It instead and is connected between anode plate and cathode plate, first magnetic sheet and the second magnetic sheet are arranged perpendicular to anode plate to drive electronics
It moves and hits gas atom to form plasma.
As a further improvement of the present invention, the etch system further includes having back bias voltage electrode, the back bias voltage electrode
It is set to side of the glass substrate far from electrode assembly.
As a further improvement of the present invention, the etch system further include be set to back bias voltage electrode and glass substrate it
Between barricade, the barricade at least covers the back bias voltage electrode.
As a further improvement of the present invention, the etch system further includes second source, the anode of the second source
It is connected to the cathode of the first power supply, the cathode of the second source is connected to the back bias voltage electrode.
As a further improvement of the present invention, the etch system further includes being set between electrode assembly and glass substrate
Mask plate, the mask plate be arranged far from the electrode assembly and offer opening to allow plasma to pass through.
As a further improvement of the present invention, the width of the opening in the horizontal direction is less than the width of anode plate, institute
State the height that the height of opening in the vertical direction is not less than glass substrate.
One of in order to solve the above problem, the present invention provides a kind of preparation method of anti-glare glass, the preparation methods
It include: the performance number for travel speed and the first power supply for configuring production line；Glass substrate is placed in the production line；Movable glass base
Plate enters in etch system as described above；To being vacuumized in etch system and reach specified vacuum degree；Open first
Power supply；Air supply source is opened, gas is provided into accommodating chamber；Glass substrate after mobile etching is away from etch system.
As a further improvement of the present invention, it is also wrapped between the step " opening the first power supply " and " opening air supply source "
It includes: adjusting the performance number of second source, open second source.
As a further improvement of the present invention, the step " glass substrate after mobile etching is away from etch system "
It later include: that layer of silicon dioxide film is plated on the side surface that glass substrate forms etching.
As a further improvement of the present invention, step " travel speed of configuration production line and the power of the first power supply
It include: the travel speed that production line is set before value "；Several glass substrates are placed in the production line；Movable glass substrate enters
In etch system as described above；To being vacuumized in etch system and reach specified vacuum degree；First power supply is set
Performance number；Open the first power supply；Air supply source is opened, gas is provided into accommodating chamber；Glass substrate after etching is taken out；Measurement
The etch depth of glass substrate；If etch depth in claimed range, records the performance number and travel speed of first power supply；
If etch depth not in claimed range, continues to modify the performance number or travel speed of the first power supply.
Compared with prior art, since anode plate and cathode plate are powered thus are produced from cathode plate court in the electrode assembly
The electronics mobile to anode plate, and the magnetic direction that the first magnetic sheet and the second magnetic sheet generate is perpendicular to the direction of the movement of electronics,
Electronics generation can be thus made to be threadingly advanced movement, thus the electrons gas atom in high-speed impact accommodating chamber repeatedly, so that
Non-polar gas atom distortion is in the plasma of polarized, and bombards glass substrate under the action of electric field.Also, it is entire
System is in vacuum, is facilitated plasma and is bombarded and etched.
Detailed description of the invention
Fig. 1 is the electrical block diagram of etch system in the present invention；
Fig. 2 is the apparatus structure schematic diagram of etch system in the present invention；
Fig. 3 is the structural schematic diagram that glass substrate is etched side in the present invention.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to protection of the present invention
Range.
As shown in Figure 1 to Figure 3, the present invention provides a kind of etch system for preparing anti-glare glass, which is used
Anti- glare glass is formed to be etched to glass substrate 7.It is in vacuum state in the etch system.It should be noted that
Vacuum state in the etch system is not complete 0 atmospheric pressure, and refers to and be lower than an atmospheric pressure in the etch system
State can be referred to as vacuum or vacuum state as long as air pressure is lower than a standard atmospheric pressure in the etch system.In this implementation
In mode, the air pressure level in the etch system is not higher than 5*10-4Pa。
The etch system includes:
First power supply V1；
Electrode assembly 10 is set to the side of glass substrate 7 to drive plasma to strike against on glass substrate 7；
Air supply source 6, to be connected with electrode assembly 10 to provide gas atom；
The electrode assembly 10 is formed with accommodating chamber 1 and fillable gas atom, the electrode assembly 10 specifically include:
Anode plate 2 and cathode plate 3, side and anode plate 2 each parallel to glass substrate 7 are arranged closer to glass substrate 7,
The anode plate 2 and cathode plate 3 are connected respectively with the anode and cathode of the first power supply V1 to provide electronics, the anode plate 2
On offer connection accommodating chamber 1 outlet 21 to allow plasma to pass through, offered on the cathode plate 3 connection accommodating chamber 1 and supply
The entrance 31 of gas source 6；
First magnetic sheet 4 and the second magnetic sheet 5, magnetic pole is opposite and is connected between anode plate 2 and cathode plate 3, first magnetic
Plate 4 and the second magnetic sheet 5 are arranged perpendicular to anode plate 2 to drive electron motion and hit gas atom to form plasma.
To since anode plate 2 and cathode plate 3 are powered thus are produced from cathode plate 3 towards sun in the electrode assembly 10
The mobile electronics of pole plate 2, and the magnetic direction that the first magnetic sheet 4 and the second magnetic sheet 5 generate is perpendicular to the direction of the movement of electronics, because
And electronics generation can be made to be threadingly advanced movement, thus the electrons gas atom in high-speed impact accommodating chamber 1 repeatedly, so that nothing
Polar gas atom distortion is in the plasma of polarized, and certainly, anode is towards glass substrate, cathode backwards to glass base
Plate.Also, due to being filled with gas in above-mentioned accommodating chamber 1, thus also there is pressure difference in accommodating chamber 1 and outside accommodating chamber 1, thus
So that plasma leaves accommodating chamber 1, it is mobile to 7 direction of glass substrate, and glass substrate 7 is bombarded under the action of electric field.And
Plasma strike performs etching and is formed rough surface in 7 surface of glass substrate, so as to effectively absorb glare.Also,
Whole system is in vacuum, is facilitated plasma and is bombarded and etched.
The etch system further includes having back bias voltage electrode 81, and it is separate that the back bias voltage electrode 81 is set to glass substrate 7
The side of electrode assembly 10, and the back bias voltage electrode 81 is set to side of the glass substrate 7 far from electrode assembly 10.At this
In embodiment, the back bias voltage electrode 81 is corresponding with the anode plate 2 of the electrode assembly 10 bigger to provide to electronics
Kinetic energy.Specifically, the anode of the second source V2 is even as shown in Figure 1, the etch system further includes having second source V2
It is connected to the cathode of the first power supply V1, the cathode of the second source V2 is connected to the back bias voltage electrode 81.
The first power supply V1 and second source V2 is DC power supply, and the DC voltage provided is not less than 1000V,
And its output power is depending on the size of etching region, but its power density is not less than 100W/cm2.First power supply
V1 and second source V2 can produce two independent current potential outputs, thus can integrate in a power supply, can also adopt respectively
It is arranged with two power supplys.The cathode of the first power supply V1 is connected with the anode of second source V2, the anode of second source V2
Potential difference is generated between cathode, thus be equivalent to the first power supply V1 supply positive voltage to electrode assembly 10 anode plate 2, second
Power supply V2 supply negative voltage gives negative bias piezoelectric board.Therefore, also there is stronger back bias voltage on negative bias piezoelectric board, can further attract has
Polar plasma attack assigns the stronger kinetic energy of plasma of polarized, so that plasma in 7 surface of glass substrate
Aggravate the material for the plasma magnitude scale that 7 surface of glass substrate is etched away to 7 surface bombardment of glass substrate.
Therefore, common, the bracket of glass substrate 7 is only connected to the cathode of the first power supply V1, so that glass base
Plate 7 is in zero potential.And double power-supply system is constructed in present embodiment, and be supplied to 81 1, back bias voltage electrode it is stronger negative
Voltage, so that plasma kinetic energy obtained is bigger, the speed for bombarding glass substrate 7 is also bigger, the depth of etching is deeper,
Speed also just it is corresponding faster.
In addition, gas provided by air supply source 6 is argon gas, and gas atom is ar atmo in present embodiment, and pass through electricity
The spiral of son can form ar atmo plasma after hitting, and the structure SPEED BALL shape of ar atmo plasma, thus
The surface texture that bombardment is formed is analogous on circular cone, as shown in Figure 3.The depth of circular cone is the 7 surface moment of glass substrate
The depth of material fallen.Purity of argon provided by the air supply source 6 is not less than 99.999%, belongs to the argon gas of extreme high purity, from
And it also can produce the argon plasma with stronger dipole moment.The flow of the air supply source 6 by mass flow controller MFC into
Row is adjusted,
Also, the depth of material that 7 surface of glass substrate etches away is by the function of the first power supply V1, second source V2
What rate and etching period mainly determined.Since glass substrate 7 to be placed on production line, production line is according to certain traveling speed
Degree movement, and glass substrate 7 is sent into etch system described above.Therefore, the travel speed of production line determines glass base
The etching period of plate 7.By adjusting suitable first power supply V1, the power of second source V2 and the travel speed of production line, i.e.,
Glass substrate 7 may make to etch away the material of appropriate depth.In the present embodiment, due to consideration that the dazzle light at night
Predominantly yellow, wavelength is in 550nm or so, therefore, has when the etch depth on 7 surface of glass substrate is in 1/4 wavelength preferable
Anti-reflection effect.Specifically, the etch depth of target glass substrate 7 is 137.5nm, but the difference of settable 5nm, because
And the etch depth of target glass substrate 7 is 137nm ± 5nm.
The etch system further includes the barricade 82 being set between back bias voltage electrode 81 and glass substrate 7, the screen
Shield plate 82 at least covers the back bias voltage electrode 81.The barricade 82 plays the role of protecting back bias voltage electrode 81, prevents from bearing
Bias electrode 81 is also by the shock of plasma and corrosion.In the present embodiment, the material of the barricade 82 is electrician
Ceramic material.
In order to guarantee the uniform etching on 7 surface of glass substrate, the etch system further includes being set to 10 He of electrode assembly
Mask plate 9 between glass substrate 7, the mask plate 9 are arranged far from the electrode assembly 10 and offer opening 91 to allow
Gas ions pass through.
Specifically, as shown in Fig. 2, setting x-axis direction is the thickness direction of mask plate 9, glass substrate 7 etc., y-axis direction
For horizontal direction, z-axis direction is vertical direction.The width of the opening 91 in the horizontal direction is less than the width of anode plate 2, institute
State the height that the height of opening 91 in the vertical direction is not less than glass substrate 7.Therefore, in the present embodiment, on production line
Glass substrate 7 can in the horizontal direction and be parallel to mask plate 9 direction it is mobile so that argon plasma can uniformly bang
It hits on 7 surface of glass substrate.The mask plate 9 is arranged close to glass substrate 7, also, between mask plate 9 and anode plate 2
Distance is 100mm.
In the present embodiment, the anode plate 2 extends in a rectangular parallelepiped shape and along the vertical direction, on the anode plate 2
The even outlet 21 that is distributed with is to allow argon plasma to pass through.Thus glass substrate 7 moves in the horizontal direction, can control argon plasma logical
The quantity for crossing the opening 91 on mask plate 9 and disposable bombardment are to the quantity on glass substrate 7, so that on glass substrate 7
The conical structure of formation is more uniform.Specifically, 91 width in the horizontal direction of opening is positive the 0.9 of plate width
Times.Certainly, the glass substrate 7 is uniform motion so that is etched on glass substrate is more uniform.
Certainly, in another embodiment of the invention, if the width of the opening 91 in the horizontal direction is not less than
The width of glass substrate 7, opening 91 are less than the height of anode plate 2 in the height of vertical direction, and the glass substrate 7 can also be along perpendicular
Histogram to and be parallel to mask plate 9 direction it is mobile.
The present invention also provides a kind of preparation method of anti-glare glass, the preparation method includes:
Configure the travel speed of production line and the performance number of the first power supply V1；
Glass substrate 7 is placed in the production line；
Movable glass substrate 7 enters in etch system as described above；
To being vacuumized in etch system and reach specified vacuum degree, it should be noted that on specified vacuum degree is
State the 5*10-4Any air pressure within Pa；
Open the first power supply V1；
Air supply source 6 is opened, provides gas into accommodating chamber 1；
Glass substrate 7 is away from etch system after mobile etching.
Therefore, the present invention in first change the travel speed of production line and the performance number of the first power supply V1 so that this first
Under the performance number of power supply V1 and the travel speed of production line, plasma time enough and power can be supplied to bombard in
On 7 surface of glass substrate.Then the first power supply V1 and air supply source 6 are opened again to form the electronics of screw and bombard plasma
Body.
It is as described above, further include in etch system of the invention have with back bias voltage electrode 81 and with 81 phase of back bias voltage electrode
The second source V2 of connection, therefore the step " opening the first power supply V1 " and " opening air supply source 6 " further include: adjust the second electricity
The performance number of source V2 opens second source V2.To be provided to plasma with bigger power.
After glass substrate 7 after forming above-mentioned etching, it is also necessary to be plated on the side for forming etching on glass substrate 7
Layer of silicon dioxide film.Specifically, being wrapped after the step " glass substrate 7 after mobile etching is away from etch system "
It includes: plating layer of silicon dioxide film on the side surface that glass substrate 7 forms etching.The refractive index of silicon dioxide film is 1.45,
It can be used as the film layer protection that glass substrate 7 is etched the side.Simultaneously by establishing the lower silicon dioxide film of this refractive index,
Utilize the principle of interference of light, it is possible to reduce atomizing effect caused by the perspective phenomenon that anti-glare glass generates, and can be into one
Step reduces the reflectivity of glare, so that anti-glare glass is more reliable and stablizes.The silicon dioxide film with a thickness of
150nm。
Since the selection of the performance number of travel speed and the first power supply V1 for production line is related to etch depth,
It is more important, thus, before configuration further include:
The travel speed of production line is set；
Several glass substrates 7 are placed in the production line；
Movable glass substrate 7 enters in etch system as described above；
To being vacuumized in etch system and reach specified vacuum degree；
The performance number of first power supply V1 is set；
Open the first power supply V1；
Air supply source 6 is opened, provides gas into accommodating chamber 1；
Glass substrate 7 after etching is taken out；
Measure the etch depth of glass substrate 7；
If etch depth in claimed range, records the performance number and travel speed of first power supply V1；
If etch depth not in claimed range, continues to modify the performance number and travel speed of first power supply V1, and
Production line is reopened to be etched and measure.
Therefore, in the present embodiment, etching carries out in a vacuum, and measurement carries out under atmospheric pressure, and is to pass through film
Thick instrument measures.Therefore, this programme, which is equivalent to, first carries out process debugging, in the power for debugging out most suitable first power supply V1
After value and production line travel speed, then carry out the etching volume production of glass substrate 7.Certainly, as described above, the etch system is also
It include second source V2, to actually also to debug the performance number of second source V2 during process debugging.
In addition, in this programme other than being etched under vacuum conditions, the coating process of above-mentioned silicon dioxide film
Equally carry out under vacuum conditions.Also, after plating silicon dioxide film, it is also necessary to the glass substrate 7 after above-mentioned plated film
Heat treatment in 30 minutes or so is carried out at high temperature, so that the stacking provisions that silicon dioxide film and etching are formed can be abundant
Fusion, and make silica crystalline, to guarantee that the glass substrate after plated film 7 has enough mechanical strengths.Equally, the mistake
Journey also still carries out under vacuum.
Finally, the glass substrate 7 for being still in high temperature feeding incubator is made its slow cooling, to eliminate between lattice
Stress.Also, the hot bending processing after for convenience, it is also necessary to which applying a layer thickness on the surface of above-mentioned silicon dioxide film is
0.18mm, the PET film of refractive index approximation 1.53.
Therefore, in conclusion providing a kind of etch system and preparation method thereof for preparing anti-glare glass in the present invention,
In the etch system, using vacuum environment and orthogonal electric field and magnetic field are set, to can produce plasma and hit
It hits on glass substrate 7.Therefore, this kind of engraving method can effectively form roughened glass substrate 7, to prevent glare.And
And glass base can be changed by the performance number and the travel speed of production line for adjusting the first power supply V1 and second source V2
The etch depth of plate 7, technique is relatively simple, and also can guarantee stability and uniformity, can have one with the production of scale
The product of cause property.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art
The other embodiments that member is understood that.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically
Protection scope that is bright, being not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention or change
More it should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of etch system for preparing anti-glare glass, forms anti-glare glass to be etched to glass substrate,
It is characterized in that, is in vacuum state in the etch system, the etch system includes:
First power supply；
Electrode assembly is set to the side of glass substrate to drive plasma to strike against on glass substrate；
Air supply source, to be connected with electrode assembly to provide gas atom；
The electrode assembly is formed with accommodating chamber and includes:
Anode plate and cathode plate, are arranged in parallel with the side of glass substrate and anode plate is arranged closer to glass substrate, described
Anode plate and cathode plate are electrically connected respectively with the anode and cathode of the first power supply to provide electronics；It is offered on the anode plate
The outlet of accommodating chamber is connected to allow plasma to pass through, the entrance of connection accommodating chamber and air supply source is offered on the cathode plate；
First magnetic sheet and the second magnetic sheet, magnetic pole is opposite and is connected between anode plate and cathode plate, first magnetic sheet and second
Magnetic sheet is arranged perpendicular to anode plate to drive electron motion and hit gas atom to form plasma.
2. etch system according to claim 1, which is characterized in that the etch system further includes having back bias voltage electrode,
The back bias voltage electrode is set to side of the glass substrate far from electrode assembly.
3. etch system according to claim 2, which is characterized in that the etch system further includes being set to negative bias piezoelectricity
Barricade between pole and glass substrate, the barricade at least cover the back bias voltage electrode.
4. etch system according to claim 2, which is characterized in that the etch system further includes second source, described
The anode of second source is connected to the cathode of the first power supply, and the cathode of the second source is connected to the back bias voltage electrode.
5. etch system according to claim 1, which is characterized in that the etch system further includes being set to electrode assembly
Mask plate between glass substrate, the mask plate are arranged far from the electrode assembly and offer opening to make plasma logical
It crosses.
6. etch system according to claim 5, which is characterized in that the width of the opening in the horizontal direction is less than sun
The width of pole plate, the height of the opening in the vertical direction are not less than the height of glass substrate.
7. a kind of preparation method of anti-glare glass, which is characterized in that the preparation method includes:
Configure the travel speed of production line and the performance number of the first power supply；
Glass substrate is placed in the production line；
Movable glass substrate enters in etch system as described in claim 1；
To being vacuumized in etch system and reach specified vacuum degree；
Open the first power supply；
Air supply source is opened, gas is provided into accommodating chamber；
Glass substrate after mobile etching is away from etch system.
8. preparation method according to claim 7, which is characterized in that the step " opening the first power supply " and " opening confession
Between gas source " further include:
The performance number of second source is adjusted, second source is opened.
9. preparation method according to claim 7, which is characterized in that " glass substrate after mobile etching makes the step
It leaves etch system " include: later
Layer of silicon dioxide film is plated on the side surface that glass substrate forms etching.
10. preparation method according to claim 7, which is characterized in that the step " travel speed of configuration production line and
Include: before the performance number of first power supply "
The travel speed of production line is set；
Several glass substrates are placed in the production line；
Movable glass substrate enters in etch system as described in claim 1；
To being vacuumized in etch system and reach specified vacuum degree；
The performance number of first power supply is set；
Open the first power supply；
Air supply source is opened, gas is provided into accommodating chamber；
Glass substrate after etching is taken out；
Measure the etch depth of glass substrate；
If etch depth in claimed range, records the performance number and travel speed of first power supply；
If etch depth not in claimed range, continues to modify the performance number or travel speed of the first power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910540494.5A CN110197785A (en) | 2019-06-21 | 2019-06-21 | A kind of etch system and preparation method preparing anti-glare glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910540494.5A CN110197785A (en) | 2019-06-21 | 2019-06-21 | A kind of etch system and preparation method preparing anti-glare glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110197785A true CN110197785A (en) | 2019-09-03 |
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ID=67754923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910540494.5A Pending CN110197785A (en) | 2019-06-21 | 2019-06-21 | A kind of etch system and preparation method preparing anti-glare glass |
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Cited By (3)
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| CN113594012A (en) * | 2021-07-28 | 2021-11-02 | 柯良节 | Plasma etching anode plate |
| CN114262159A (en) * | 2021-09-16 | 2022-04-01 | 西实显示高新材料(沈阳)有限公司 | Processing equipment and processing method for anti-glare glass |
| CN115365083A (en) * | 2021-05-17 | 2022-11-22 | 亨泰光学股份有限公司 | Bidirectional anode plasma chemical vapor deposition coating equipment |
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Effective date of registration: 20211223 Address after: 215312 No. 288, Shipai Rui'an Road, Bacheng Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Jiangsu galatech Microelectronics Co.,Ltd. Address before: 215010 No. 9, Shiyang Road, high tech Zone, Suzhou, Jiangsu Applicant before: SUZHOU GALA TECH POWER Co.,Ltd. |