CN102108492A - Ionization-rate-controllable coating device based on high-power impulse magnetron sputtering - Google Patents
Ionization-rate-controllable coating device based on high-power impulse magnetron sputtering Download PDFInfo
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- CN102108492A CN102108492A CN 201110020364 CN201110020364A CN102108492A CN 102108492 A CN102108492 A CN 102108492A CN 201110020364 CN201110020364 CN 201110020364 CN 201110020364 A CN201110020364 A CN 201110020364A CN 102108492 A CN102108492 A CN 102108492A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01J37/3467—Pulsed operation, e.g. HIPIMS
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Abstract
The invention relates to an ionization-rate-controllable coating device based on high-power impulse magnetron sputtering, which comprises a vacuum sputtering system, a low-voltage direct-current power system, a high-voltage impulse power system, a PLC (Programmable Logic Controller) central control system and a computer, wherein the low-voltage direct-current power system provides a low-voltage current for the vacuum system, and the high-voltage impulse power system provides a high-voltage impulse current for the vacuum system; the PLC central control system is used for controlling the vacuum system, low-voltage direct-current power system and high-voltage impulse power system; and the PLC and computer are used for transmitting and controlling data. The invention effectively shortens the delay time of the impulse current due to the preset direct-current voltage, effectively ensures the film deposition rate by coupling the direct-current magnetron sputtering, and establishes a plasma ionization-rate-adjustable HIPIMS (high-power impulse magnetron sputtering) technique, thereby providing technical support for research in related science.
Description
Technical field
The present invention relates to a kind of under magnetron sputtering coupled voltages pattern, the HIPIMS magnetron sputtering equipment that the plasma body ionization level is adjustable.
Background technology
Magnetron sputtering has obtained widespread use as the physical gas phase deposition technology of a very advantageous in a plurality of fields such as microelectronics, optical thin film and material surface processing.But because ionization level is lower, this technology shows as preparation technology's instability and relatively poor film-substrate cohesion also having certain limitation aspect the raising film quality.
Improve the plasma body ionization level, the controllability that increases film process is the great demand that surperficial domain engineering is used always.High power density pulsed magnetron sputtering (HIPIMS) is exactly the novel surface modification technology that grows up under this background, be Surface Engineering research the most significant breakthrough in history in 30 years, modern film preparation and the development of accurately controlling are had huge pushing effect.In HIPIMS, high-octane pulse action can make the electron density around the magnetic controlling target reach 10
19m
3, the high-density of electronics has increased the ionizing collision probability of sputtered atom and high-energy electron, has obtained the sputter material particle of high ionization thus, the ionization level of metallic plasma can be brought up to more than 80% by 5%.Because control and influence the projectile lotus can state and the means of spatial distribution mainly be electricity, magnetic field, therefore, improve the plasma body ionization level, make neutral uncontrollable particle change ion into, will help the human intervention film process, and the acquisition high quality thin film.
As shown in Figure 1, in the prior art, high power pulsed source is the core component of HIPIMS system, is the pulse networking that single or multiple lc circuit combines.Charge power supply 4 for capacitor bank C charging, constitutes charge circuit by electronic switch S1; Voltage on the capacitor bank C is at electronic switch S
2Regular on-off action form down impulsive discharge in magnetron.Magnetron sputtering target 2 is worked under high level can obtain higher ion volume density and ionization level, but the restriction that traditional magnetically controlled DC sputtering is melted by the magnetic controlling target heating can only be operated in 25mA/cm
2Below the target current density.And this power supply can provide 1000～3000 W/cm on magnetic controlling target
2Peak energy denisty (conventional magnetron sputtering is no more than 25 W/cm usually
2), instantaneous power can reach MW class, but its frequency is low, and dutycycle is little, and mean power has only tens kilowatts, can not cause damage to magnetic controlling target.
But in the discharge process of standard HIPIMS power supply, magnetron current rises and voltage pulse is difficult to synchronously, and especially under the subatmospheric situation, as shown in Figure 2, the generation time of high ionization level plasma body aura reaches tens microseconds than voltage delay in the same sputter pulse.In addition, compare with conventional magnetron sputtering, the sedimentation rate under the HIPIMS same average power is lower, mainly is because under high ionization level condition, and a large amount of sputter material ions are sucked back to negative electrode, and the no show matrix surface.Therefore, can obtain the plasma body of high ionization level, not damaging depositing of thin film speed again is the HIPIMS Developing Trend in Technology.
HIPIMS is as a kind of emerging technology that high ionization level plasma source is provided, can utilize it to realize that the plasma body ionization level is adjustable within the specific limits, but because standard HIPIMS power supply uses lower pulse-repetition (5HZ～200HZ) and low duty ratio (0.1%～10%), if will make magnetron sputtering keep works better, must guarantee that it has higher peak value of pulse energy density, therefore can't only realize effective control of plasma body ionization level based on the regulation and control of standard HIPIMS power supply.
Summary of the invention
According to existing deficiency in the prior art, the invention provides a kind of impulse of current lag time that in the HIPIMS discharge process, reduces, when guaranteeing film deposition rate, set up the adjustable HIPIMS magnetron sputtering film device of a kind of plasma body ionization level.The controlled filming equipment of a kind of ionization level based on the high power pulse magnetron sputtering comprises: vacuum sputtering system, low-voltage dc power supply system, high-voltage pulse power source system, PLC central authorities' hierarchy of control and computer; The low-voltage dc power supply system provides low-tension current for vacuum systems, and the high-voltage pulse power source system provides high-voltage pulse current for vacuum systems; The PLC central authorities hierarchy of control is controlled the transmission and the control of described PLC and computer realization data to vacuum systems, low-voltage dc power supply system, high-voltage pulse power source system.
Further, described vacuum systems is made up of vacuum cavity, magnetron sputtering target and vacuum acquisition device.
Further, described low-voltage dc power supply system comprises: the direct supply that is cascaded, electronic switch S
1With diode D1.
Further, the voltage range of low dc voltage voltage stabilized source is 0～600V.
Further, described high-voltage pulse power source system comprises: charge power supply, capacitor bank C and diode D2, current sensor, inducer L and two electronic switch S
2, S
3Wherein, electronic switch S
2Connect charge power supply, electrical condenser group C and diode D2 three parallel connection with charge power supply; After three's parallel connection with electronic switch S
3,Current sensor and inducer L series connection are arranged on the way circuit of high-voltage pulse power source system; The high-voltage pulse power source system is by electronics S of control
2Duration of charging of opening time control capacitance group C, and the peak value of discharge pulse; By controlling another electronic switch S
3The opening and closing time, control the frequency and the dutycycle of the high-voltage pulse that the high-voltage pulse power source system sent.
Further, the crest voltage of described high-voltage pulse power source is 2000V, and pulse-repetition is 5HZ～200HZ, and dutycycle is 0.1%～5%.
Further, described PLC central control unit comprises: hardware circuit, CPU and communications protocol are formed, and described PLC is by the transmission and the control of communications protocol and computer realization data.
Means as realizing above-mentioned purpose are coupled into low-voltage dc power supply in high power pulse magnetron sputtering power supply, constitute the magnetron sputtering coupling power.Adopt PLC as central control unit, be equipped with the control of corresponding interface circuits realization to magnetic control sputtering system, work schedule by the coherent system switch is regulated and control time of origin, frequency, peak value and the dutycycle etc. of coupling pulsed voltage, realizes adjustment and control to sedimentation rate and ionization level.
The invention has the beneficial effects as follows:
1) presets volts DS, effectively reduce the pulsed current lag time;
2) be coupled into magnetically controlled DC sputtering, effectively guaranteed film deposition rate;
3) set up the adjustable HIPIMS magnetron sputtering technique of a kind of plasma body ionization level, for the research of related science provides technical support.
Description of drawings
Fig. 1 is a HIPIMS prior art principle schematic;
Fig. 2 is the discharge character curve of existing standard HIPIMS power supply;
Fig. 3 is the adjustable high power pulse magnetron sputtering of an ionization level principle schematic;
Fig. 4 is the adjustable pulsed voltage coupling work mode of an ionization level synoptic diagram;
Fig. 5 is the discharge character curve of the adjustable coupling power of ionization level.
Embodiment
Fig. 3 shows the schematic diagram of the adjustable high power pulse magnetron sputtering technique of this ionization level, and this system mainly comprises: vacuum sputtering system, low-voltage dc power supply system, high-voltage pulse power source system and the PLC central authorities hierarchy of control.The low-voltage dc power supply system provides low-tension current for vacuum systems, and the high-voltage pulse power source system provides high-tension current for vacuum systems; The PLC central authorities hierarchy of control is controlled vacuum systems, low-voltage dc power supply system, high-voltage pulse power source system.
The vacuum sputtering system is made up of vacuum cavity 1, magnetron sputtering target 2 and vacuum acquisition device etc.The low-voltage dc power supply system comprises: the direct supply 3, the electronic switch S that are cascaded
1With diode D1; Be used to magnetic controlling target that stable low voltage is provided; The voltage range of low dc voltage voltage stabilized source is 0～600V.The high-voltage pulse power source system comprises: charge power supply 4, capacitor bank C and diode D2, current sensor 5, inducer L and electronic switch S
2, S
3Wherein, electronic switch S
2Connect charge power supply 4, electrical condenser group C and diode D2 three parallel connection, back in parallel and electronic switch S with charge power supply 4
3,Current sensor 5 and inducer L series connection are arranged on the high-voltage pulse power source system way circuit.The high-voltage pulse power source system is by control electronics S
2Duration of charging of opening time control capacitance group C, and the peak value of discharge pulse.By control electronic switch S
3The opening and closing time, control the frequency and the dutycycle of the high-voltage pulse that the high-voltage pulse power source system sent.The crest voltage of required high-voltage pulse power source system is 2000V among the present invention, and pulse-repetition is 5HZ～200HZ, and dutycycle is 0.1%～5%, electronic switch S
2Break-make be electrical condenser group C charging, electronic switch S
3Break-make form high-voltage pulse.By regulating switch S
2And S
3The break-make duration and sequential at interval, can obtain the high-voltage pulse of different peak values, frequency and dutycycle.The PLC central control unit is made up of hardware circuit 6, CPU and communications protocol 7, and PLC realizes the transmission and the control of data by communications protocol and computer 8.Sampled voltage V in the circuit is a magnetic controlling target voltage, measures by the voltmeter in parallel with magnetic controlling target.Sample rate current I serves as reasons the pulsed current that the current sensor 5 in the high-voltage pulse power source system way circuit is obtained is set.Current sensor 5 is selected Hall current sensor usually for use.
In the process of film preparation, sample rate current and sampled voltage are transferred on the computer 8 by PLC, are used to monitor the discharge condition of vacuum sputtering system; Simultaneously send instruction to PLC, by switch S in control low-voltage power supply system and the high-voltage power supply system by computer 8
1, S
2And S
3Break-make, the magnetron sputtering coupled voltages with definite pulse time of origin, peak value, frequency and dutycycle is provided for magnetron sputtering target 2.Low-voltage dc power supply system and high-voltage pulse power source system are separate, can distinguish in coating process separately and use, and also can realize coupling under the control of computer and PLC, as shown in Figure 4.Adjustable for realizing ionization level, the voltage of the direct supply 3 in the low-voltage dc power supply system and the voltage of the charge power supply 4 in the high-voltage pulse power source system are all adjustable continuously, the frequency pulsewidth of the voltage of high-voltage pulse power source system is adjustable continuously in allowed band, and impulse phase can accurately move.
By in the coupled voltages ideal waveform synoptic diagram of Fig. 4 as can be seen, the significant parameter that influences thin film deposition speed is the constant low voltage value that presets, and the significant parameter that influences the plasma body ionization level is: pulse time of origin, peak value, frequency and dutycycle etc.Therefore, carry out communication, by switch S in control low-voltage power supply system and the high-voltage power supply system by computer and PLC
1, S
2And S
3The break-make duration and sequential at interval, just can realize adjustment and control to film deposition rate and plasma body ionization level.The Constant Direct Current low voltage that wherein presets plays the effect of pre-build-up of luminance to magnetic controlling target, as shown in Figure 5, coupling pulsed current under the subatmospheric is reduced to below ten microseconds retardation time, compares, obviously accelerate the lift velocity of pulsed current with the impulse of current lag time of prior art among Fig. 2.In addition, in the coupled voltages waveform of Fig. 4, low-voltage dc power supply can obtain stable low ionization level plasma body for magnetic controlling target provides conventional magnetically controlled DC sputtering electric current, to guarantee depositing of thin film speed.And coordinate back to back HIPIMS high-voltage pulse under the control at PLC, realize the instantaneous high ionization of plasma body.By adjusting the power ratio of pulse and magnetically controlled DC sputtering, promptly under the situation that dc constant voltage is determined, time of origin, frequency, peak value and the dutycycle of regulation and control high voltage pulse, the pulse waveform of change coupling power realizes adjustment and control to sedimentation rate and ionization level.
Claims (7)
1. the controlled filming equipment of the ionization level based on the high power pulse magnetron sputtering is characterized by, and described filming equipment comprises: vacuum sputtering system, low-voltage dc power supply system, high-voltage pulse power source system, PLC central authorities' hierarchy of control and computer; The low-voltage dc power supply system provides low-tension current for vacuum systems, and the high-voltage pulse power source system provides high-voltage pulse current for vacuum systems; The PLC central authorities hierarchy of control is controlled the transmission and the control of described PLC and computer realization data to vacuum systems, low-voltage dc power supply system, high-voltage pulse power source system.
2. according to filming equipment described in the claim 1, it is characterized by, described vacuum systems obtains device by vacuum cavity, magnetron sputtering target and vacuum and forms.
3. according to filming equipment described in the claim 1, it is characterized by, described low-voltage dc power supply system comprises: the direct supply that is cascaded, electronic switch S
1With diode D1.
4. according to filming equipment described in the claim 3, it is characterized by, the voltage range of low dc voltage voltage stabilized source is 0～600V.
5. according to filming equipment described in the claim 1, it is characterized by, described high-voltage pulse power source system comprises: charge power supply, capacitor bank C and diode D2, current sensor, inducer L and two electronic switch S
2, S
3Wherein, electronic switch S
2Connect charge power supply, electrical condenser group C and diode D2 three parallel connection with charge power supply; After three's parallel connection with another electronic switch S
3,Current sensor and inducer L series connection are arranged on the way circuit of high-voltage pulse power source system; The high-voltage pulse power source system is by electronics S of control
2Duration of charging of opening time control capacitance group C, and the peak value of discharge pulse; By controlling another electronic switch S
3The opening and closing time, control the frequency and the dutycycle of the high-voltage pulse that the high-voltage pulse power source system sent.
6. according to filming equipment described in the claim 5, it is characterized by, the crest voltage of described high-voltage pulse power source is 2000V, and pulse-repetition is 5HZ～200HZ, and dutycycle is 0.1%～5%.
7. according to filming equipment described in the claim 1, it is characterized by, described PLC central control unit comprises: hardware circuit, CPU and communications protocol are formed, and described PLC is by the transmission and the control of communications protocol and computer realization data.
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| CN 201110020364 CN102108492A (en) | 2011-01-18 | 2011-01-18 | Ionization-rate-controllable coating device based on high-power impulse magnetron sputtering |
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| CN 201110020364 CN102108492A (en) | 2011-01-18 | 2011-01-18 | Ionization-rate-controllable coating device based on high-power impulse magnetron sputtering |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104451578A (en) * | 2014-11-17 | 2015-03-25 | 中国科学院力学研究所 | Direct current coupling type high energy pulse magnetron sputtering method |
| CN104498884A (en) * | 2014-12-04 | 2015-04-08 | 南京工业大学 | Method and device for detecting ionization rate of coating material particles |
| CN104711524A (en) * | 2013-12-17 | 2015-06-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ionization rate detection device and method |
| CN105220122A (en) * | 2015-10-27 | 2016-01-06 | 中国科学院兰州化学物理研究所 | The ionogenic magnetic control sputtering device of tool high power pulse |
| US9677168B2 (en) | 2013-10-08 | 2017-06-13 | TPK America, LLC | Touch panel and method for manufacturing the same |
| CN108220901A (en) * | 2018-02-06 | 2018-06-29 | 中国工程物理研究院流体物理研究所 | A kind of novel plasma sputtering film coating method |
| CN110004426A (en) * | 2019-04-19 | 2019-07-12 | 东莞超汇链条有限公司 | The resulting plated film of film plating process and its method of continous way coating system |
| CN111146967A (en) * | 2019-12-25 | 2020-05-12 | 兰州空间技术物理研究所 | High-reliability surface breakdown discharge trigger type pulse arc striking power supply |
| CN112080728A (en) * | 2020-08-12 | 2020-12-15 | 北京航空航天大学 | HiPIMS system and method for reducing HiPIMS discharge current delay |
| WO2021128924A1 (en) * | 2019-12-23 | 2021-07-01 | 苏州易德龙科技股份有限公司 | Method for improving current response speed of pulse power supply |
| CN114032518A (en) * | 2021-10-29 | 2022-02-11 | 北京航空航天大学 | Bipolar pulse magnetron sputtering system and method for improving flow and energy of deposited ions |
| CN115323335A (en) * | 2022-07-19 | 2022-11-11 | 东莞市华升真空镀膜科技有限公司 | Magnetron sputtering system |
| CN117614309A (en) * | 2023-12-05 | 2024-02-27 | 唐山标先电子有限公司 | High-power pulse magnetron sputtering power supply adopting series auxiliary power supply and method thereof |
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| CN101838795A (en) * | 2010-06-30 | 2010-09-22 | 哈尔滨工业大学 | Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering |
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| US20050092596A1 (en) * | 2001-06-14 | 2005-05-05 | Vladimir Kouznetsov | Method and apparatus for plasma generation |
| CN2775070Y (en) * | 2005-04-08 | 2006-04-26 | 中国航空工业第一集团公司北京航空制造工程研究所 | Material surface ion injection and deposit composite biasing device |
| CN101838795A (en) * | 2010-06-30 | 2010-09-22 | 哈尔滨工业大学 | Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9677168B2 (en) | 2013-10-08 | 2017-06-13 | TPK America, LLC | Touch panel and method for manufacturing the same |
| CN104711524A (en) * | 2013-12-17 | 2015-06-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ionization rate detection device and method |
| CN104451578A (en) * | 2014-11-17 | 2015-03-25 | 中国科学院力学研究所 | Direct current coupling type high energy pulse magnetron sputtering method |
| CN104498884A (en) * | 2014-12-04 | 2015-04-08 | 南京工业大学 | Method and device for detecting ionization rate of coating material particles |
| CN104498884B (en) * | 2014-12-04 | 2017-03-22 | 南京工业大学 | Method and device for detecting ionization rate of coating material particles |
| CN105220122A (en) * | 2015-10-27 | 2016-01-06 | 中国科学院兰州化学物理研究所 | The ionogenic magnetic control sputtering device of tool high power pulse |
| CN108220901A (en) * | 2018-02-06 | 2018-06-29 | 中国工程物理研究院流体物理研究所 | A kind of novel plasma sputtering film coating method |
| CN110004426A (en) * | 2019-04-19 | 2019-07-12 | 东莞超汇链条有限公司 | The resulting plated film of film plating process and its method of continous way coating system |
| WO2021128924A1 (en) * | 2019-12-23 | 2021-07-01 | 苏州易德龙科技股份有限公司 | Method for improving current response speed of pulse power supply |
| CN111146967A (en) * | 2019-12-25 | 2020-05-12 | 兰州空间技术物理研究所 | High-reliability surface breakdown discharge trigger type pulse arc striking power supply |
| CN111146967B (en) * | 2019-12-25 | 2023-08-15 | 兰州空间技术物理研究所 | High-reliability edge surface breakdown discharge trigger type pulse arc striking power supply |
| CN112080728A (en) * | 2020-08-12 | 2020-12-15 | 北京航空航天大学 | HiPIMS system and method for reducing HiPIMS discharge current delay |
| CN114032518A (en) * | 2021-10-29 | 2022-02-11 | 北京航空航天大学 | Bipolar pulse magnetron sputtering system and method for improving flow and energy of deposited ions |
| CN115323335A (en) * | 2022-07-19 | 2022-11-11 | 东莞市华升真空镀膜科技有限公司 | Magnetron sputtering system |
| CN115323335B (en) * | 2022-07-19 | 2024-02-23 | 广东华升纳米科技股份有限公司 | Magnetron sputtering system |
| CN117614309A (en) * | 2023-12-05 | 2024-02-27 | 唐山标先电子有限公司 | High-power pulse magnetron sputtering power supply adopting series auxiliary power supply and method thereof |
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Application publication date: 20110629 |