CN103650699A - Plasma treatment device for seeds and treatment method of plasma treatment device - Google Patents

Plasma treatment device for seeds and treatment method of plasma treatment device Download PDF

Info

Publication number
CN103650699A
CN103650699A CN201310668647.7A CN201310668647A CN103650699A CN 103650699 A CN103650699 A CN 103650699A CN 201310668647 A CN201310668647 A CN 201310668647A CN 103650699 A CN103650699 A CN 103650699A
Authority
CN
China
Prior art keywords
discharging
feed cavity
chamber
seed
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310668647.7A
Other languages
Chinese (zh)
Inventor
沈文凯
王红卫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Original Assignee
SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU OPS PLASMA TECHNOLOGY Co Ltd filed Critical SUZHOU OPS PLASMA TECHNOLOGY Co Ltd
Priority to CN201310668647.7A priority Critical patent/CN103650699A/en
Publication of CN103650699A publication Critical patent/CN103650699A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention relates to a plasma treatment device for seeds and a treatment method of the plasma treatment device. The plasma treatment device for the seeds comprises a feeding chamber, a reaction chamber, an electrode assembly, a high-frequency power supply, a discharging chamber and a negative pressure device, wherein a feed inlet and a gas inlet for introducing a reaction gas are formed in one side of the reaction chamber, a discharge opening is formed in the other side of the reaction chamber, the feed inlet end of the reaction chamber is higher than the discharge end of the reaction chamber and is placed by forming an inclined angle of A with the horizontal plane, the feeding chamber is connected with the feed inlet, the discharging chamber is connected with the discharge opening, the reaction chamber is internally provided with a stirring mechanism, the electrode assembly is arranged on the outer surface of the reaction chamber, the high-frequency power supply is electrically connected with the electrode assembly, and the negative pressure device is connected with the feeding chamber and the discharging chamber. The plasma treatment device provided by the invention can simultaneously carry out feed, plasma treatment and discharge, and feeds and discharges in an uninterrupted manner, so that the time is saved and the production efficiency is improved. Furthermore, the reaction gas can increase the yield of the seeds after plasma treatment and improve the antiviral property of the seeds, thereby satisfying the production demand.

Description

A kind of seed plasma processing apparatus and processing method thereof
Technical field
The invention belongs to plasma processing apparatus field, relate in particular a kind of seed plasma processing apparatus and processing method thereof.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be and removes outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, with vavuum pump, realize certain vacuum, along with gas is more and more thin, the freely-movable distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, on the not impact of the performance of material internal bulk material, is desirable surface modification means.
China Shi Yige large agricultural country, in agricultural products, the quality of seed is extremely important to agricultural production, the output and antiviral the going up that are mainly reflected in seed, the fertilizer that general seed demand is a large amount of and agricultural chemicals improve output and expelling parasite, and the product of production is very dangerous with agricultural chemicals.
Therefore, need seed plasma processing apparatus and the processing method thereof that a kind of security performance is high badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of seed plasma processing apparatus and processing method thereof are provided.
The technical scheme that realizes the object of the invention is: a kind of seed plasma processing apparatus, comprise feed cavity, reaction chamber, electrode assemblie, high frequency electric source, discharging chamber and negative pressure device, the gas access that described reaction chamber one side is provided with charging aperture and passes into for reacting gas, described reaction chamber opposite side is provided with discharging opening, reaction chamber feed inlet end is placed higher than reaction chamber discharge port end and with horizontal plane angle of inclination A, described feed cavity is connected with described charging aperture, described discharging chamber is connected with described discharging opening, in described reaction chamber, be provided with rabbling mechanism, described electrode assemblie is arranged at described reaction chamber outer surface, described high frequency electric source is electrically connected to described electrode assemblie, described negative pressure device respectively with described feed cavity, described discharging chamber connects.
Further, described angle A is 5 °~60 °.
Further, described electrode assemblie is a pair of symmetrically arranged annular electrode.
Further, described rabbling mechanism comprises shaft and is arranged at the stirring vane on described shaft.
Further, described feed cavity comprises the first feed cavity and the second feed cavity being connected successively, and described the first feed cavity is connected with described negative pressure device, and described the second feed cavity is connected with described charging aperture.
Further, also comprise screw feeding mechanism, described screw feeding mechanism is arranged between described the second feed cavity and described charging aperture.
Further, described discharging chamber comprises the first discharging chamber and the second discharging chamber being connected successively, and described the first discharging chamber is connected with described negative pressure device, and described the second discharging chamber is connected with described discharging opening.
Further, a kind of seed method of plasma processing, comprises the following steps:
Step 1, cleans, and seed is washed, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity, negative pressure device vacuumizes the first feed cavity, the second feed cavity, reaction chamber, the first discharging chamber, the second discharging chamber, after vacuumizing, seed is entered to the second feed cavity from the first feed cavity, then from charging aperture, enter reaction chamber, if the first feed cavity hollow, by the port closing of the first feed cavity, toward charging in the first feed cavity, after the first feed cavity charging completes, the first feed cavity is vacuumized, the outlet of then opening the first feed cavity continues charging, keeps continuous feed;
Step 3, Cement Composite Treated by Plasma, high frequency electric source drive electrode assembly generates electric field, and then reacting gas enters reaction chamber from gas access, and reacting gas carries out Cement Composite Treated by Plasma to seed after electric field ionization;
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber and the second discharging chamber successively from discharging opening, if fill in the second discharging chamber,, by the first discharging chamber port closing, the second discharging chamber discharging, after discharging completes vacuumizes the second discharging chamber, then continuation discharging is opened in the first discharging chamber outlet, keeps continuous discharge.
Further, in described step 1, with cold wind, dry up.
Further, the reacting gas in described step 3 is neon, argon gas, nitrogen or helium.
The present invention has positive effect: the present invention can realize charging, Cement Composite Treated by Plasma, discharging and carry out simultaneously, and continual charging and discharging, save time, enhance productivity, on the other hand, reacting gas can increase the output of seed after to seed Cement Composite Treated by Plasma, improves the antiviral property of seed, meets the demand of producing. accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below, wherein:
Fig. 1 is structural representation of the present invention.
Wherein: 1, the first discharging chamber, 2, discharging opening, 3, negative pressure device, 4, reaction chamber, 5, electrode assemblie, 6, charging aperture, the 7, second feed cavity, 8, gas access, 9, rabbling mechanism, 10, screw feeding mechanism, the 11, second discharging chamber, the 12, first feed cavity.
Embodiment
Embodiment 1
As shown in Figure 1, as the first preferred embodiment, the present embodiment provides a kind of seed plasma processing apparatus, comprise feed cavity, reaction chamber 4, electrode assemblie 5, high frequency electric source (not shown), discharging chamber and negative pressure device 3, the gas access 8 that reaction chamber 4 right sides are provided with charging aperture 6 and pass into for reacting gas, reaction chamber 4 left sides are provided with discharging opening 2, reaction chamber 4 feed inlet ends higher than reaction chamber 4 discharge port ends and with the placement of 5 °~60 °, horizontal plane angle of inclination, preferably 10 ° of the present embodiment; Feed cavity comprises that the first feed cavity 12, the second feed cavity 7 and screw feeding mechanism 10, the first feed cavity 12 that are connected are successively connected with negative pressure device 3, and screw feeding mechanism 10 is connected with charging aperture 6; Discharging chamber comprises that the first discharging chamber 1 and 11, the second discharging chambeies 11, the second discharging chamber that are connected are successively connected with negative pressure device 3, and the first discharging chamber 1 is connected with discharging opening 2; In reaction chamber 4, be provided with rabbling mechanism 9, rabbling mechanism 9 comprises shaft and is arranged at the stirring vane on shaft, electrode assemblie 5 is a pair of symmetrically arranged annular electrode, and electrode assemblie 5 is arranged at the outer surface of reaction chamber 4, and high frequency electric source is electrically connected to electrode assemblie 5.
The present embodiment can be realized charging, Cement Composite Treated by Plasma, discharging and carry out simultaneously, and continual charging and discharging, saves time, and enhances productivity.
The present embodiment also provides a kind of seed method of plasma processing, comprises the following steps:
Step 1, cleans, and seed is washed, with cold wind, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity 12, 3 pairs of the first feed cavity 12 of negative pressure device, the second feed cavity 7, reaction chamber 4, the first discharging chamber 1, the second discharging chamber 11 vacuumizes, after vacuumizing, seed is entered to the second feed cavity 7 from the first feed cavity 12, then by screw feeding mechanism 10, from charging aperture 6, enter reaction chamber 4, if the first feed cavity 12 hollows, by the port closing of the first feed cavity 12, toward charging in the first feed cavity 12, after charging completes, the first feed cavity 12 is vacuumized, the outlet of then opening the first feed cavity 12 continues charging, keep continuous feed,
Step 3, Cement Composite Treated by Plasma, high frequency electric source drive electrode assembly 5 generates electric fields, and then reacting gas 8 enters reaction chamber 4 from gas access, and reacting gas carries out Cement Composite Treated by Plasma to seed after electric field ionization;
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber 1 and the second discharging chamber 11 successively from discharging opening 2, if fill in the second discharging chamber 11,, by the first discharging chamber 1 port closing, the second discharging chamber 11 dischargings, after discharging completes vacuumize the second discharging chamber 11, then continuation discharging is opened in the first discharging chamber 1 outlet, keeps continuous discharge.
Reacting gas in the present embodiment step 3 is neon, argon gas, nitrogen or helium, is specifically not construed as limiting.The present embodiment is simple and reasonable, and reacting gas can increase the output of seed after to seed Cement Composite Treated by Plasma, improves the antiviral property of seed, meets the demand of producing.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (10)

1. a seed plasma processing apparatus, it is characterized in that, comprise feed cavity, reaction chamber, electrode assemblie, high frequency electric source, discharging chamber and negative pressure device, the gas access that described reaction chamber one side is provided with charging aperture and passes into for reacting gas, described reaction chamber opposite side is provided with discharging opening, reaction chamber feed inlet end is placed higher than reaction chamber discharge port end and with horizontal plane angle of inclination A, described feed cavity is connected with described charging aperture, described discharging chamber is connected with described discharging opening, in described reaction chamber, be provided with rabbling mechanism, described electrode assemblie is arranged at described reaction chamber outer surface, described high frequency electric source is electrically connected to described electrode assemblie, described negative pressure device respectively with described feed cavity, described discharging chamber connects.
2. seed plasma processing apparatus according to claim 1, is characterized in that, described angle A is 5 °~60 °.
3. seed plasma processing apparatus according to claim 1, is characterized in that, described electrode assemblie is a pair of symmetrically arranged annular electrode.
4. seed plasma processing apparatus according to claim 1, is characterized in that, described rabbling mechanism comprises shaft and is arranged at the stirring vane on described shaft.
5. according to the arbitrary described seed plasma processing apparatus of claim 1-4, it is characterized in that, described feed cavity comprises the first feed cavity and the second feed cavity being connected successively, and described the first feed cavity is connected with described negative pressure device, and described the second feed cavity is connected with described charging aperture.
6. seed plasma processing apparatus according to claim 5, is characterized in that, also comprises screw feeding mechanism, and described screw feeding mechanism is arranged between described the second feed cavity and described charging aperture.
7. according to the arbitrary described seed plasma processing apparatus of claim 1-4, it is characterized in that, described discharging chamber comprises the first discharging chamber and the second discharging chamber being connected successively, and described the second discharging chamber is connected with described negative pressure device, and described the first discharging chamber is connected with described discharging opening.
8. the seed method of plasma processing as described in as arbitrary in claim 1-7, is characterized in that, comprises the following steps:
Step 1, cleans, and seed is washed, dried up;
Step 2, charging, seed clean in step 1 is put in the first feed cavity, negative pressure device vacuumizes the first feed cavity, the second feed cavity, reaction chamber, the first discharging chamber, the second discharging chamber, then seed is entered to the second feed cavity from the first feed cavity, then from charging aperture, enter reaction chamber, if the first feed cavity hollow, by the port closing of the first feed cavity, toward charging in the first feed cavity, after the first feed cavity charging completes, the first feed cavity is vacuumized, the outlet of then opening the first feed cavity continues charging, keeps continuous feed;
Step 3, Cement Composite Treated by Plasma, high frequency electric source drive electrode assembly generates electric field, and then reacting gas enters reaction chamber from gas access, and reacting gas carries out Cement Composite Treated by Plasma to seed after electric field ionization;
Step 4, discharging, seed after processing in step 3 is entered to the first discharging chamber and the second discharging chamber successively from discharging opening, if fill in the second discharging chamber,, by the first discharging chamber port closing, the second discharging chamber discharging, after discharging completes vacuumizes the second discharging chamber, then continuation discharging is opened in the first discharging chamber outlet, keeps continuous discharge.
9. seed method of plasma processing according to claim 8, is characterized in that, in described step 1, with cold wind, dries up.
10. seed method of plasma processing according to claim 8, is characterized in that, the reacting gas in described step 3 is neon, argon gas, nitrogen or helium.
CN201310668647.7A 2013-12-11 2013-12-11 Plasma treatment device for seeds and treatment method of plasma treatment device Pending CN103650699A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310668647.7A CN103650699A (en) 2013-12-11 2013-12-11 Plasma treatment device for seeds and treatment method of plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310668647.7A CN103650699A (en) 2013-12-11 2013-12-11 Plasma treatment device for seeds and treatment method of plasma treatment device

Publications (1)

Publication Number Publication Date
CN103650699A true CN103650699A (en) 2014-03-26

Family

ID=50290425

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310668647.7A Pending CN103650699A (en) 2013-12-11 2013-12-11 Plasma treatment device for seeds and treatment method of plasma treatment device

Country Status (1)

Country Link
CN (1) CN103650699A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723861A (en) * 2016-04-15 2016-07-06 常州机电职业技术学院 Large-grained seed plasma activating device and process
CN106961874A (en) * 2017-04-08 2017-07-21 阜南县永盛工艺品有限公司 A kind of method for promoting twigs of the chaste tree seed to sprout
CN107306536A (en) * 2017-07-25 2017-11-03 常州机电职业技术学院 The method that plasma seed activates device and seed activation
CN113287386A (en) * 2021-05-17 2021-08-24 安徽中科大禹科技有限公司 Plasma seed treatment device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2807733Y (en) * 2005-06-07 2006-08-23 山西省农业科学院旱地农业研究中心 Plasma treating apparatus for activating crop seed
CN1914972A (en) * 2006-09-08 2007-02-21 邵汉良 Seed treatment instrument of cold plasma
WO2007124945A1 (en) * 2006-04-28 2007-11-08 Fachhochschule Hildesheim/Holzminden/Göttingen Method and device for treating seeds with a physical plasma at atmospheric pressure
CN101669416A (en) * 2008-09-12 2010-03-17 杨思泽 Method for treating plant seeds by plasmas and device for realizing method
CN201892820U (en) * 2010-11-15 2011-07-06 广州市科密化学有限公司 Three-dimensional device for used for printer for toner continuous production
CN102921328A (en) * 2012-11-18 2013-02-13 青岛嘉禾丰肥业有限公司 Agitator and using method of agitator
CN203608531U (en) * 2013-12-11 2014-05-28 苏州市奥普斯等离子体科技有限公司 Seed plasma processing device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2807733Y (en) * 2005-06-07 2006-08-23 山西省农业科学院旱地农业研究中心 Plasma treating apparatus for activating crop seed
WO2007124945A1 (en) * 2006-04-28 2007-11-08 Fachhochschule Hildesheim/Holzminden/Göttingen Method and device for treating seeds with a physical plasma at atmospheric pressure
CN1914972A (en) * 2006-09-08 2007-02-21 邵汉良 Seed treatment instrument of cold plasma
CN101669416A (en) * 2008-09-12 2010-03-17 杨思泽 Method for treating plant seeds by plasmas and device for realizing method
CN201892820U (en) * 2010-11-15 2011-07-06 广州市科密化学有限公司 Three-dimensional device for used for printer for toner continuous production
CN102921328A (en) * 2012-11-18 2013-02-13 青岛嘉禾丰肥业有限公司 Agitator and using method of agitator
CN203608531U (en) * 2013-12-11 2014-05-28 苏州市奥普斯等离子体科技有限公司 Seed plasma processing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723861A (en) * 2016-04-15 2016-07-06 常州机电职业技术学院 Large-grained seed plasma activating device and process
CN105723861B (en) * 2016-04-15 2018-08-07 常州机电职业技术学院 Large-scale grain seed plasma activation processing unit and treatment process
CN106961874A (en) * 2017-04-08 2017-07-21 阜南县永盛工艺品有限公司 A kind of method for promoting twigs of the chaste tree seed to sprout
CN107306536A (en) * 2017-07-25 2017-11-03 常州机电职业技术学院 The method that plasma seed activates device and seed activation
CN113287386A (en) * 2021-05-17 2021-08-24 安徽中科大禹科技有限公司 Plasma seed treatment device

Similar Documents

Publication Publication Date Title
CN103650699A (en) Plasma treatment device for seeds and treatment method of plasma treatment device
CN100358198C (en) Method for uniform glow discharge in atmosphere air
CN102752950A (en) Surface treatment method of low temperature plasma of granular material and device thereof
CN106034371A (en) Material treatment device with plasma jet array cooperating with mechanical rotational motion
CN203608531U (en) Seed plasma processing device
CN102560426B (en) Automatic circulation plasma vapor phase deposition system
CN104284505A (en) Normal-pressure low-temperature plasma running water form powder material modifying system
CN203617245U (en) Novel powder plasma treating device
CN103999599B (en) Plasma crop seed process for producing line and production technology thereof
CN202205700U (en) Low-temperature plasma treatment device on surface of granular material
CN203588971U (en) Improved granular material rotation plasma processing device
CN105854759A (en) Material surface low temperature plasma modification method and device
CN104299882A (en) Surface plasma processing device for powder materials
CN201742637U (en) Atmospheric pressure medium blocking-air cold plasma fluidizing device
CN203590584U (en) Granular material rotation plasma processing device
CN103730319A (en) Novel powder plasma processing device
CN102746524A (en) Material surface low temperature plasma modification method and apparatus
CN203659796U (en) Ultrasonic atomization plasma processing device
CN203588972U (en) Capillary glass tube inner wall plasma processing device
CN105436180A (en) Vacuum glass plasma cleaning method and device
CN203860010U (en) Crop seed plasma treatment production line
CN203179834U (en) Plasma processing device
CN203588974U (en) Vacuum far-zone plasma treating device
CN204305450U (en) Atmospheric low-temperature plasma continuous-flow type powder body material reforming system
CN102505447B (en) Device and method for continuously processing fiber surface by atmospheric low temperature radio frequency plasma

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20140326