CN211603843U - Photoresist removing device for cleaning PCB - Google Patents
Photoresist removing device for cleaning PCB Download PDFInfo
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- CN211603843U CN211603843U CN201922271826.2U CN201922271826U CN211603843U CN 211603843 U CN211603843 U CN 211603843U CN 201922271826 U CN201922271826 U CN 201922271826U CN 211603843 U CN211603843 U CN 211603843U
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Abstract
The utility model relates to a photoresist removing device for cleaning a PCB, which comprises a radio frequency power supply module and a plasma generator, wherein the plasma generator is provided with an air inlet system; the plasma generator comprises an original plate ground electrode, a silicon wafer, a photoresist plate, a radio frequency electrode and a plasma gas flow; the air inlet system comprises an air conveying pipe, an oxygen device and an argon device, wherein the air conveying pipe is connected with the plasma generator. In the structure, the plasma generator is used for placing introduced gas into the gas inlet system between the radio-frequency electrode and the original plate ground electrode to form cold plasma gas after breakdown ionization, and simultaneously enabling the active gas to excite and examine active substances and uniformly downwards spray the active substances on the surface of a circuit board with photoresist to form a 150-millimeter discharge area, so that ionization energy generated by oxygen and argon in the cold plasma gas reacts with the photoresist to generate carbon dioxide and water, and the carbon dioxide and the water are discharged to the outside. Thereby achieving the functions of convenient operation, low temperature, no scratch and pollution and low cost.
Description
[ technical field ] A method for producing a semiconductor device
The utility model relates to a photoresist remove device for rinsing PCB board that is used for PCB board to wash technical field.
[ background of the invention ]
Photoresist removal technology plays a very important role in the microelectronics industry, accounting for approximately 30% to 35% of the integrated circuit fabrication process in PCB boards. Substances such as silicon, polysilicon, aluminum, silicon oxide or silicon dioxide and the like on the surface of the circuit board should not be damaged and polluted when the photoresist is removed, if the photoresist removing process cannot be well controlled or is not operated correctly, electronic components on the welding circuit board are likely to be polluted and damaged, and the yield of products is affected. The traditional chemical wet photoresist removing technology mainly comprises the steps of soaking and dissolving in an acetone organic solvent, heating with a third liquid to realize SPM cleaning, etching glue liquid with special photoresist, cleaning with other organic solvents and the like. Although the chemical wet photoresist removing technology can achieve the purpose of a photoetching machine on the surface of a circuit board, the chemical wet photoresist removing technology cannot be accurately controlled, cleaning is not thorough, repeated cleaning is needed, and new pollutants are easily introduced after treatment. With the use of new materials and the further reduction of feature sizes of microdevices, contamination and damage become major factors that limit the yield of integrated circuits. A plasma gas photoresist removal technique is subsequently developed, in which active oxygen generated in plasma by oxygen reacts with photoresist to generate carbon dioxide and water, so as to achieve the purpose of removing the photoresist. The plasma photoresist removing technology which is generally adopted at present is carried out in a vacuum chamber. A small amount of oxygen is introduced into the reaction system, and under the action of a strong electric field, low-pressure oxygen generates plasma, wherein activated gas or active atomic gas accounts for a proper proportion, so that the photoresist can be quickly oxidized into a volatile gas state and is pumped away by a mechanical pump, and the photoresist film on the silicon wafer is removed. The method has the advantages of convenient operation, high photoresist removing efficiency, clean surface, no scratch, low silicon wafer temperature and the like, but the ion bombardment can damage the surfaces of some devices, and the equipment and maintenance cost is very high.
[ summary of the invention ] of the utility model
In view of this, the technical problem to be solved of the present invention is to provide a photoresist removing device for cleaning a PCB board, which has the advantages of convenient operation, low temperature, no scratch and no pollution, and low cost.
Therefore, the technical solution of the present invention is to provide a photoresist removing device for cleaning a PCB, which comprises a radio frequency power module, and plasma generators connected to two ends of the radio frequency power module, wherein the plasma generators are provided with an air intake system; the plasma generator comprises an original plate ground electrode, a silicon wafer arranged on the original plate ground electrode, a photoresist plate arranged on the silicon wafer, a radio frequency electrode which is arranged in parallel with the original plate ground electrode and is positioned above the photoresist plate, and a plasma gas flow formed between the radio frequency electrode and the original plate ground electrode; the air inlet system comprises an air conveying pipe, an oxygen device and an argon device, wherein the oxygen device is connected with one end of the air conveying pipe, and the other end of the air conveying pipe is connected with the plasma generator.
Further limiting, the frequency of the radio frequency power supply module is 13.56MHz, and the working range is 0-600W; the radio frequency power supply module comprises a lead capacitor Cf, an inductance coil resistor R1 and an inductance L1, wherein the inductance coil resistor R1 and the inductance L1 are connected in series; the inductor L2, the inductor coil resistor R2 and the loss resistor Rc are connected to one end shared by the lead capacitor Cf and the inductor L1, and the plasma resistor Rd, the capacitor Cs and the plasma capacitor Cd are respectively connected to two ends of the lead capacitor Cf in parallel.
Further, the plasma generator is composed of a radio frequency electrode made of stainless steel and an original plate ground electrode coaxial with the radio frequency electrode, introduced gas is broken down and ionized between the radio frequency electrode and the original plate ground electrode to form cold plasma, and meanwhile, the active gas is excited to generate active substances such as atoms and is uniformly sprayed downwards to form a discharge interval with the diameter of 150 millimeters.
The plasma generator is further limited to be composed of radio-frequency electrodes made of aviation aluminum and an original plate ground electrode arranged in parallel with the radio-frequency electrodes, introduced gas is broken down and ionized between the electrodes to form a cylindrical discharge interval with the diameter being one, and meanwhile, active gas is excited to generate active substances in the interval.
Further, the distances between the radio-frequency electrode and the ground electrode of the original plate are respectively 2 mm, 3 mm, 4 mm and 5 mm.
The utility model has the advantages of: the plasma generator is provided with an air inlet system; the plasma generator comprises an original plate ground electrode, a silicon wafer arranged on the original plate ground electrode, a photoresist plate arranged on the silicon wafer, a radio frequency electrode which is arranged in parallel with the original plate ground electrode and is positioned above the photoresist plate, and a plasma gas flow formed between the radio frequency electrode and the original plate ground electrode; the air inlet system comprises an air conveying pipe, an oxygen device and an argon device, wherein the oxygen device is connected with one end of the air conveying pipe, and the other end of the air conveying pipe is connected with the plasma generator. In the structure, the plasma generator is used for placing introduced gas into the gas inlet system between the radio-frequency electrode and the original plate ground electrode to form cold plasma gas after breakdown ionization, and simultaneously enabling the active gas to excite and examine active substances and uniformly downwards spray the active substances on the surface of a circuit board with photoresist to form a 150-millimeter discharge area, so that ionization energy generated by oxygen and argon in the cold plasma gas reacts with the photoresist to generate carbon dioxide and water, and the carbon dioxide and the water are discharged to the outside. Thereby achieving the functions of convenient operation, low temperature, no scratch and pollution and low cost.
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings and embodiments.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a photoresist removing apparatus for cleaning a PCB according to the present invention;
fig. 2 is a circuit diagram of the rf power module of the present invention;
FIG. 3 is a schematic view of the state of use of the resist removing apparatus according to the present invention.
[ detailed description ] embodiments
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention clearer and more obvious, the following description of the present invention with reference to the accompanying drawings and embodiments is provided for further details. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
Referring to fig. 1 to 3, a photoresist removing apparatus for cleaning a PCB board including a radio frequency power module, a plasma generator, and an air intake system is described in connection with an embodiment.
The frequency of the radio frequency power supply module is 13.56MHZ, and the working range is 0-600W; the radio frequency power supply module comprises a lead capacitor Cf, an inductance coil resistor R1 and an inductance L1, wherein the inductance coil resistor R1 and the inductance L1 are connected in series; the inductor L2, the inductor coil resistor R2 and the loss resistor Rc are connected to one end shared by the lead capacitor Cf and the inductor L1, and the plasma resistor Rd, the capacitor Cs and the plasma capacitor Cd are respectively connected to two ends of the lead capacitor Cf in parallel. Impedance matching between the excitation source and the device, the matching network must be an inductive network. The purpose of impedance matching is to obtain the maximum power conversion coefficient, and once the impedance network is mismatched, reflection will occur when the excitation source outputs voltage to the load. Before the discharge breakdown, the discharge electrodes are large, the circuit is in a mismatched state, and the voltage transfer coefficient of the circuit is large, so that the electrodes have high voltage, and the discharge breakdown is possible. Once broken down, the loss of rf power in the ionized gas increases, the discharge plasma resistance decreases, gradually tending towards its stable value, while at the same time the voltage reflection coefficient also decreases. As more and more power is lost in the gas discharge, the discharge plasma resistance drops further to its stable value. And finally, the reflection coefficient tends to enter an impedance matching state due to the reduction, and the power conversion coefficient of the excitation source and the plasma load is the maximum at the moment. After the plasma is established, if the discharge resistance is further reduced due to the fluctuation of the output power of the excitation source, the impedance network mismatch is caused, the voltage transmission coefficient is reduced, the reflected power is increased, and the discharge resistance is increased as a result. If the discharge resistance is increased due to the fluctuation of the output power of the excitation source, the matching network is mismatched, the power reflection is caused, but the voltage transmission coefficient is increased, the ionization of the discharge space is increased, the discharge resistance is reduced, and the impedance matching condition is approached again.
The plasma generator comprises an original plate ground electrode 1, a silicon wafer 2 arranged on the original plate ground electrode 1, a photoresist plate 3 arranged on the silicon wafer 2, a radio frequency electrode 4 arranged in parallel with the original plate ground electrode 1 and positioned above the silicon wafer, and a plasma gas flow 8 formed between the radio frequency electrode 4 and the original plate ground electrode 1. The plasma generator is composed of a radio frequency electrode 4 made of stainless steel and an original plate ground electrode 1 coaxial with the radio frequency electrode 4, introduced gas is broken down and ionized between the radio frequency electrode 4 and the original plate ground electrode 1 to form cold plasma, and meanwhile, the active gas is excited to generate active substances such as atoms and is uniformly sprayed downwards to form a discharging interval with the diameter of 150 millimeters. The plasma generator is composed of a radio frequency electrode 4 made of aviation aluminum and an original plate ground electrode 1 arranged in parallel with the radio frequency electrode 4, introduced gas is broken down and ionized between the electrodes to form a cylindrical discharge interval with the diameter of one, and active gas is excited in the interval to generate active substances. The distances between the radio-frequency electrode 4 and the original plate ground electrode 1 are respectively 2 mm, 3 mm, 4 mm and 5 mm.
The air intake system comprises an air delivery pipe 5, an oxygen device 6 and an argon device 7, wherein the oxygen device is connected with one end of the air delivery pipe 5, and the other end of the air delivery pipe 5 is connected with the plasma generator.
The plasma generator is formed by adopting a normal pressure radio frequency cold plasma generator, wherein chemical active substances activated by plasma react with dirt on the surface of a material to generate non-toxic gas or volatile gas, and the purpose of cleaning is achieved by a small filtering devicencm－3N is 11, the electron temperature is 2-4eV, and the oxygen atom concentration is' 5X10ncm－3And n is 15.
The photoresist is cleaned by the plasma generator made of aviation aluminum as the radio frequency electrode 4, so that small deposits generated by the oxidation of the electrode are not deposited on the silicon wafer, and the silicon wafer cannot be thoroughly cleaned.
In the embodiment, the power range, the plate distance and the mixing ratio of the oxygen and the hydrogen for stable discharge of the plasma are determined, and the temperature of the plasma for discharge is less than 150 ℃, so that the device cannot be thermally damaged.
In summary, the plasma generator is provided with an air inlet system; the plasma generator comprises an original plate ground electrode 1, a silicon wafer 2 arranged on the original plate ground electrode 1, a photoresist plate 3 arranged on the silicon wafer 2, and a radio frequency electrode 4 arranged in parallel with the original plate ground electrode 1 and positioned above. The air intake system comprises an air delivery pipe 5, an oxygen device 6 and an argon device 7, wherein the oxygen device is connected with one end of the air delivery pipe 5, and the other end of the air delivery pipe 5 is connected with the plasma generator. In the structure, the plasma generator leads the gas introduced into the gas inlet system to be arranged between the radio-frequency electrode 4 and the original plate ground electrode 1 to be subjected to breakdown ionization to form cold plasma gas, meanwhile, the active gas is enabled to excite and examine active substances and is uniformly sprayed downwards to the surface of a circuit board with photoresist to form a 150 mm discharge area, so that ionization energy generated by oxygen and argon in the cold plasma gas reacts with the photoresist to generate carbon dioxide and water, and the carbon dioxide and the water are discharged to the outside. Thereby achieving the functions of convenient operation, low temperature, no scratch and pollution and low cost.
The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, without thereby limiting the scope of the invention. Any modification, equivalent replacement and improvement made by those skilled in the art without departing from the scope and spirit of the present invention should be within the scope of the claims of the present invention.
Claims (5)
1. The utility model provides a photoresist remove device for rinsing PCB board, its includes the radio frequency power module, connects the plasma generator at radio frequency power module both ends, its characterized in that: the plasma generator is provided with an air inlet system; the plasma generator comprises an original plate ground electrode, a silicon wafer arranged on the original plate ground electrode, a photoresist plate arranged on the silicon wafer, a radio frequency electrode which is arranged in parallel with the original plate ground electrode and is positioned above the photoresist plate, and a plasma gas flow formed between the radio frequency electrode and the original plate ground electrode; the air inlet system comprises an air conveying pipe, an oxygen device and an argon device, wherein the oxygen device is connected with one end of the air conveying pipe, and the other end of the air conveying pipe is connected with the plasma generator.
2. The photoresist removing apparatus for cleaning a PCB as recited in claim 1, wherein: the frequency of the radio frequency power supply module is 13.56MHZ, and the working range is 0-600W; the radio frequency power supply module comprises a lead capacitor Cf, an inductor L2, an inductor coil resistor R2, a loss resistor Rc, a plasma resistor Rd, a capacitor Cs and a plasma capacitor Cd; the inductance coil resistor R1 and the inductor L1 are connected in parallel at two ends of the lead capacitor Cf, and the inductance coil resistor R1 and the inductor L1 are connected together in series; the inductor L2, the inductor coil resistor R2 and the loss resistor Rc are connected to one end shared by the lead capacitor Cf and the inductor L1, and the plasma resistor Rd, the capacitor Cs and the plasma capacitor Cd are respectively connected to two ends of the lead capacitor Cf in parallel.
3. The photoresist removing apparatus for cleaning a PCB as recited in claim 1, wherein: the plasma generator is composed of a radio frequency electrode made of stainless steel and an original plate ground electrode coaxial with the radio frequency electrode, introduced gas is broken down and ionized between the radio frequency electrode and the original plate ground electrode to form cold plasma, and meanwhile, the active gas is excited to generate active substances such as atoms and is uniformly sprayed downwards to form a discharging interval with the diameter of 150 millimeters.
4. The photoresist removing apparatus for cleaning a PCB as recited in claim 1, wherein: the plasma generator is composed of radio-frequency electrodes made of aviation aluminum and an original-plate ground electrode arranged in parallel with the radio-frequency electrodes, introduced gas is broken down and ionized between the electrodes to form a cylindrical discharge interval with the diameter of one, and meanwhile, active gas is excited in the interval to generate active substances.
5. The photoresist removing apparatus for cleaning a PCB as recited in claim 1, wherein: the distances between the radio frequency electrode and the ground electrode of the original plate are respectively 2 mm, 3 mm, 4 mm and 5 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922271826.2U CN211603843U (en) | 2019-12-16 | 2019-12-16 | Photoresist removing device for cleaning PCB |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922271826.2U CN211603843U (en) | 2019-12-16 | 2019-12-16 | Photoresist removing device for cleaning PCB |
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| CN211603843U true CN211603843U (en) | 2020-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201922271826.2U Active CN211603843U (en) | 2019-12-16 | 2019-12-16 | Photoresist removing device for cleaning PCB |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823289A (en) * | 2022-05-15 | 2022-07-29 | 安徽森米诺农业科技有限公司 | Efficient cleaning process for semiconductor wafer |
| CN114899087A (en) * | 2022-05-15 | 2022-08-12 | 安徽森米诺农业科技有限公司 | Wafer plasma cleaning method |
| CN115586712A (en) * | 2022-10-09 | 2023-01-10 | 亚新半导体科技(无锡)有限公司 | Energy-saving wafer production is with cleaning equipment that strips |
-
2019
- 2019-12-16 CN CN201922271826.2U patent/CN211603843U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823289A (en) * | 2022-05-15 | 2022-07-29 | 安徽森米诺农业科技有限公司 | Efficient cleaning process for semiconductor wafer |
| CN114899087A (en) * | 2022-05-15 | 2022-08-12 | 安徽森米诺农业科技有限公司 | Wafer plasma cleaning method |
| CN114823289B (en) * | 2022-05-15 | 2022-11-22 | 上海申和投资有限公司 | Efficient cleaning process for semiconductor wafer |
| CN114899087B (en) * | 2022-05-15 | 2023-04-11 | 上海申和投资有限公司 | Wafer plasma cleaning method |
| CN115586712A (en) * | 2022-10-09 | 2023-01-10 | 亚新半导体科技(无锡)有限公司 | Energy-saving wafer production is with cleaning equipment that strips |
| CN115586712B (en) * | 2022-10-09 | 2023-09-22 | 亚新半导体科技(无锡)有限公司 | Energy-saving photoresist removing and cleaning equipment for wafer production |
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