CN102896115A - Novel normal pressure medium block type active free radical cleaning equipment - Google Patents
Novel normal pressure medium block type active free radical cleaning equipment Download PDFInfo
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- CN102896115A CN102896115A CN2011102094512A CN201110209451A CN102896115A CN 102896115 A CN102896115 A CN 102896115A CN 2011102094512 A CN2011102094512 A CN 2011102094512A CN 201110209451 A CN201110209451 A CN 201110209451A CN 102896115 A CN102896115 A CN 102896115A
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- dielectric barrier
- cleaning equipment
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- living radical
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- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 150000003254 radicals Chemical class 0.000 title claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000005416 organic matter Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a novel normal-pressure dielectric barrier type active free radical cleaning device which comprises a high-voltage electrode, a dielectric barrier layer, a grounding electrode, a power supply, a movable manipulator, a heating device and an air inlet and exhaust system. The device is characterized in that the high-voltage electrode is wrapped by the medium barrier layer, discharge can be generated in a gap between the high-voltage electrode and the grounding electrode under normal pressure to generate plasma, high-activity free radicals generated in a discharge area are ejected out of a nozzle under the drive of airflow with certain pressure, and organic substances on the surface of an object to be treated are removed when the high-activity free radicals are ejected to the surface of the object to be treated. The active free radical produced by the invention can be used for silicon wafer damage-free photoresist removal and organic matter cleaning.
Description
Technical field
The present invention relates to a kind of novel atmospheric dielectric barrier type living radical cleaning equipment, especially the free radical that refers to this equipment is to be produced by the plasma discharge that atmospheric dielectric stops, and carry ejection by the air-flow of certain air pressure, form high concentration active group line, be used for the photoresist on the silicon chip and organic matter are cleaned.
Background technology
Along with the development of large scale integrated circuit, the improving constantly of integrated level, constantly the reducing of live width, also more and more higher to the requirement that the not damaged of silicon chip cleans.In silicon transistor and integrated circuit production, almost every procedure has the problem of Wafer Cleaning, the quality of Wafer Cleaning seriously influences device performance, deal with improperly, whole silicon chips are scrapped, can not make pipe, perhaps produced device performance is inferior, and stability and reliability are very poor.Therefore silicon chip being carried out undamaged cleaning has great significance.
That commonly uses at present removes photoresist and cleaning method, by wet method and dry method dual mode.There are many shortcomings in the wet-cleaning wet-cleaning: for example: (1) can not accurately be controlled; (2) cleaning is not thorough, needs repeatedly to clean; (3) introduce easily new impurity; (4) can not process residue; (5) contaminated environment needs waste liquid is processed; (6) consume a large amount of acid and water.In the dry method cleaning of plasma, do not use any chemical solvent, therefore essentially no pollutant is conducive to environmental protection.In addition, its production cost is lower, cleans to have good uniformity and repeated, controllability, easily realizes batch production.But dry method commonly used is removed photoresist and cleaning equipment at present, under vacuum state, use plasma that silicon chip surface is directly cleaned, ion in the plasma can cause very large damage to the etching lines of silicon chip surface like this, be not applicable to 32nm and following node technology, and, because its use is vacuum equipment, this will be so that equipment cost be high, complex operation.The present invention has designed the device that produces free radical under the normal pressure.Clean to replace plasma clean with free radical, minimum to the damage that cause on the surface of silicon chip, and do not need to vacuumize, improved production efficiency, lower production cost.
Summary of the invention
A kind of novel atmospheric dielectric barrier type living radical cleaning equipment comprises high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator, heater and intake and exhaust system.The characteristic of this equipment is that high-field electrode is wrapped up by dielectric barrier, under normal pressure, can in the gap of high-field electrode and earth electrode, discharge, produce plasma, under the air-flow of certain pressure drives, the high mars free radical that region of discharge produces is ejected by spout, when being ejected into need body surface to be processed, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: high-field electrode is to be coated by a dielectric barrier, this high-field electrode is cylindrical shape or flat shape, and the shape of spout is circular ring type or flat mouth-shaped, and this dielectric barrier is that quartz material is made.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: ground electrode is to be made by circular ring type or flat metal electrode, and this ground electrode is the outside that is coated on high-field electrode, this ground electrode is connected with housing and ground connection.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: the power supply that is connected with high-field electrode is high-frequency and high-voltage power supply, the output P-to-P voltage value of power supply is greater than 3000 volts.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: be provided with certain gap between the dielectric that coats high-field electrode and earth electrode, the range scale in this gap is the 0.5-5 millimeter.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: the gas that region of discharge adopts is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liter/mins of clocks.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this free-radical generator equipment can be realized four-dimensional movement by manipulator control.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this equipment is provided with hood and discharge duct, makes remaining free radical beam and discharges with the reacted product of organic matter.
Described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
Atmospheric dielectric barrier type living radical cleaning equipment of the present invention works under the normal pressure, and its advantage is: 1, adopt the discharge of dielectric impedance formula, and can be under normal pressure uniform and stable discharge produces the plasma of high number of free radical.2, do not contain ion component in the free radical beam that ejects, can carry out not damaged to silicon chip surface and remove photoresist and clean.3, adopt the high frequency electric source discharge, cheap with the radio-frequency power supply comparative price of equal-wattage.4, employing can be at the robot device with four frees degree, can carry out evenly, comprehensively remove photoresist and clean 8 inches and above silicon chip surface.5, this equipment does not need to vacuumize, and has improved production efficiency, lower production cost.
Main application of the present invention is to be used in the integrated circuit fabrication process, the photoresist on the cleaning silicon chip and organic pollution.In addition, it also can be used for the organic matter of other physical surface is cleaned.
Description of drawings
Fig. 1 Facad structure cross-sectional schematic of the present invention.
Vertical view cutaway drawing when Fig. 2 high-field electrode of the present invention is cylindrical structure.
Vertical view cutaway drawing when Fig. 3 high-field electrode of the present invention is the platypelloid type structure.
See also Fig. 1 Fig. 2 and Fig. 3, atmospheric dielectric barrier type living radical cleaning equipment of the present invention comprises an air supply source 111, inlet channel 112, insulation connecting material 113, earth electrode 114, dielectric barrier 116, high-field electrode 117, heater 120, robot support frame 122, mobile manipulator 123, power supply 124, discharge duct 125 and hood 126.
The clean gas that is provided by air supply source 111 enters into the space 115 of plasma generator by inlet channel 112, the ionization that is stimulated produces plasma and free radical, this plasma is combined into free radical beam 121 through collision after leaving electrode district, and be ejected into certain speed on the photoresist 118 on silicon chip 119 surfaces, react formation C with photoresist
2O and H
2The byproducts of reaction such as O, and by hood 126 and 125 discharges of connected discharge duct.
Power acquisition excites discharge with high-frequency and high-voltage power supply, and the peak-to-peak voltage during discharge is greater than 3000 volts, and discharge is to carry out under normal pressure.Can control by control power and gas flow the free radical beam of ejection.
In cleaning process, the temperature of silicon chip 119 is to be heated in 200 ℃ the scope by heater 120.Temperature by heating silicon chip 119 can improve the reaction cleaning speed.
Consult Fig. 2, the shape of high-field electrode 117 is cylindrical, the shape of ground electrode 114 is cylindrical shapes, dielectric impedance material 116 is side and the bottoms that are coated on high-field electrode 117, insulating materials 113 is electrode 114 and high-field electrode 117 regularly, and isolation forms the gap 115 of a circular ring type, spout be shaped as circular ring type.
Consult Fig. 3, it is plate that high-field electrode 117 also can be made into, dielectric impedance material 116 is to be coated on the both sides of high-field electrode 117 and the end of spout, adopt insulating materials 113 regularly electrode 114 and high-field electrode 117, between ground electrode 114 and dielectric impedance material 116, form two parallel spaces 115, spout be shaped as two parallel flat degree of lip-roundings.
High-field electrode 117 and earth electrode 114 are to adopt the metallic conduction material to make; Insulation connecting material 113 be by the polytetrafluoro material make, dielectric barrier 116 is to be made by quartz material; Discharge duct 125 and hood 126 are to be made by organic material.
Invention has been described in conjunction with specific embodiments with reference to the accompanying drawings for the above, yet, need to prove, for a person skilled in the art, in the situation that does not break away from the spirit and scope of the present invention, can make many changes and modification to above-described embodiment, these changes and modification all drop in the claim restricted portion of the present invention.
Claims (9)
1. a novel atmospheric dielectric barrier type living radical cleaning equipment comprises high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator, heater and intake and exhaust system.The characteristic of this equipment is that high-field electrode is wrapped up by dielectric barrier, under normal pressure, can in the gap of high-field electrode and earth electrode, discharge, produce plasma, under the air-flow of certain pressure drives, the high mars free radical that region of discharge produces is ejected by spout, when being ejected into need body surface to be processed, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
2. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: high-field electrode is to be coated by a dielectric barrier, this high-field electrode is cylindrical shape or flat shape, the shape of spout is circular ring type or flat mouth-shaped, and this dielectric barrier is that quartz material is made.
3. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: ground electrode is to be made by circular ring type or flat metal electrode, and this ground electrode is the outside that is coated on high-field electrode, and this ground electrode is connected with housing and ground connection.
4. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: the power supply that is connected with high-field electrode is high-frequency and high-voltage power supply, and the output P-to-P voltage value of power supply is greater than 3000 volts.
5. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: be provided with certain gap between the dielectric that coats high-field electrode and earth electrode, the range scale in this gap is the 0.5-5 millimeter.
6. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: the gas that region of discharge adopts is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liter/mins of clocks.
7. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this free-radical generator equipment can be realized four-dimensional movement by manipulator control.
8. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this equipment is provided with hood and discharge duct, makes remaining free radical beam and discharges with the reacted product of organic matter.
9. such as right 1 described atmospheric dielectric barrier type living radical cleaning equipment, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102094512A CN102896115A (en) | 2011-07-26 | 2011-07-26 | Novel normal pressure medium block type active free radical cleaning equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102094512A CN102896115A (en) | 2011-07-26 | 2011-07-26 | Novel normal pressure medium block type active free radical cleaning equipment |
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| Publication Number | Publication Date |
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| CN102896115A true CN102896115A (en) | 2013-01-30 |
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| CN2011102094512A Pending CN102896115A (en) | 2011-07-26 | 2011-07-26 | Novel normal pressure medium block type active free radical cleaning equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111804673A (en) * | 2020-07-22 | 2020-10-23 | 无锡奥威赢科技有限公司 | Plasma degumming machine |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694324A (en) * | 2005-03-02 | 2005-11-09 | 华北电力大学（北京） | Method for uniform glow discharge in atmosphere air |
| CN101121095A (en) * | 2007-05-25 | 2008-02-13 | 北京工业大学 | Low temperature plasma device for treating volatile organic |
| CN101277576A (en) * | 2007-03-26 | 2008-10-01 | 中国科学院光电研究院 | System for processing thin-film material surface using bi-medium to block electric discharge |
| WO2008144607A1 (en) * | 2007-05-17 | 2008-11-27 | Texas Instruments Incorporated | Programmable circuit having a carbon nanotube |
| CN101376968A (en) * | 2007-08-27 | 2009-03-04 | 宝山钢铁股份有限公司 | Normal atmosphere plasma strip steel film coating process |
| CN102085521A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure medium blocking type active free radical cleaning system |
| CN102085520A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure double-medium blocking flat-opening type active free radical cleaning system |
| CN102087487A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Novel method for cleaning silicon wafer by normal pressure plasma free radical beam |
-
2011
- 2011-07-26 CN CN2011102094512A patent/CN102896115A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694324A (en) * | 2005-03-02 | 2005-11-09 | 华北电力大学（北京） | Method for uniform glow discharge in atmosphere air |
| CN101277576A (en) * | 2007-03-26 | 2008-10-01 | 中国科学院光电研究院 | System for processing thin-film material surface using bi-medium to block electric discharge |
| WO2008144607A1 (en) * | 2007-05-17 | 2008-11-27 | Texas Instruments Incorporated | Programmable circuit having a carbon nanotube |
| CN101121095A (en) * | 2007-05-25 | 2008-02-13 | 北京工业大学 | Low temperature plasma device for treating volatile organic |
| CN101376968A (en) * | 2007-08-27 | 2009-03-04 | 宝山钢铁股份有限公司 | Normal atmosphere plasma strip steel film coating process |
| CN102085521A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure medium blocking type active free radical cleaning system |
| CN102085520A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure double-medium blocking flat-opening type active free radical cleaning system |
| CN102087487A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Novel method for cleaning silicon wafer by normal pressure plasma free radical beam |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111804673A (en) * | 2020-07-22 | 2020-10-23 | 无锡奥威赢科技有限公司 | Plasma degumming machine |
| CN111804673B (en) * | 2020-07-22 | 2022-03-22 | 无锡奥威赢科技有限公司 | Plasma degumming machine |
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Application publication date: 20130130 |