CN104752258A - Cleaning method for plasma-processing chamber - Google Patents

Cleaning method for plasma-processing chamber Download PDF

Info

Publication number
CN104752258A
CN104752258A CN 201310745043 CN201310745043A CN104752258A CN 104752258 A CN104752258 A CN 104752258A CN 201310745043 CN201310745043 CN 201310745043 CN 201310745043 A CN201310745043 A CN 201310745043A CN 104752258 A CN104752258 A CN 104752258A
Authority
CN
Grant status
Application
Patent type
Prior art keywords
cleaning
cooling gas
gas supply
chamber
processing chamber
Prior art date
Application number
CN 201310745043
Other languages
Chinese (zh)
Inventor
周军
李江
孙海辉
Original Assignee
中微半导体设备(上海)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned

Abstract

The invention provides a cleaning method for a plasma-processing chamber. The cleaning method for the plasma-processing chamber comprises the following steps: using a gas spray head of the plasma-processing chamber for pumping cleaning gas into the chamber, exerting radio frequency energy for stimulating the cleaning gas into plasma for cleaning the chamber, and continuously supplying cooling gas in a cooling gas supplying pipeline of the plasma-processing chamber until the end of the cleaning. The cleaning method for the plasma-processing chamber can ensure a helium supplying pipeline to keep away from pollution during the cleaning process, pollutant is not deposited on the inner wall of the pipeline because of the cleaning process so far as to block the pipeline.

Description

等离子体处理腔室的清洁方法 The method of cleaning the plasma processing chamber

技术领域 FIELD

[0001] 本发明涉及半导体制造领域,尤其涉及一种等离子体处理腔室的清洁方法。 [0001] The present invention relates to semiconductor manufacturing, and more particularly relates to a cleaning method of a plasma processing chamber.

背景技术 Background technique

[0002] 等离子处理装置利用真空反应室的工作原理进行半导体基片和等离子平板的基片的加工。 [0002] The plasma processing apparatus for processing a substrate and a semiconductor substrate by plasma flat working principle of the vacuum reaction chamber. 真空反应室的工作原理是在真空反应室中通入含有适当刻蚀剂源气体的反应气体,然后再对该真空反应室进行射频能量输入,以激活反应气体,来激发和维持等离子体,以便分别刻蚀基片表面上的材料层或在基片表面上淀积材料层,进而对半导体基片和等离子平板进行加工。 Working principle of the vacuum chamber is introduced into a vacuum reaction chamber a reaction gas containing a suitable etchant source gas, and then the RF energy input to the vacuum chamber to activate the reaction gas, and maintaining a plasma is excited, so that respectively etchable material layer on the surface layer of the substrate or depositing material on a substrate surface, and thus the semiconductor substrate and the flat plasma processing.

[0003] 等离子体处理腔室在基片制程过程中往往产生很多污染,例如金属污染或者聚合物沉积等。 [0003] The plasma processing chamber tends to produce a lot of pollution in the substrate during the manufacturing process, such as a metal or a polymer deposition contamination. 为了去除污染物,往往需要在执行一定数量的基片制程以后进行等离子体清洁处理。 In order to remove contaminants often need plasma cleaning process performed after a certain number of process substrates. 然而,在对等离子体处理腔室执行清洁的过程中往往也会在腔室内部的局部区域产生意想不到的二次污染,往往对后续的基片制程产生影响。 However, often also produce unexpected secondary pollution in a local area inside the chamber during the execution of cleaning processing chamber of a plasma, often impact on the subsequent substrate processes.

[0004] 本发明正是基于此提出的。 [0004] The present invention is based forth herein.

发明内容 SUMMARY

[0005] 针对背景技术中的上述问题,本发明提出了一种等离子体处理腔室的清洁方法。 [0005] In view of the above problems of the background art, the present invention provides a cleaning method of a plasma processing chamber.

[0006] 本发明第一方面提供了一种用于等离子体处理腔室的清洁方法,其中,通过等离子体处理腔室的气体喷淋头向腔室内部通入清洁气体,然后施加射频能量将清洁气体激发成等离子体对腔室内部进行清洁,其中,在所述等离子体处理腔室的冷却气体供应管道内持续供应冷却气体。 [0006] The first aspect of the present invention provides a cleaning method of a plasma processing chamber, in which, through the cleaning gas into the chamber through the gas shower head of the plasma processing chamber, the RF energy is then applied cleaning gas into a plasma excitation inside of the chamber clean, wherein a continuous supply of cooling gas in the cooling gas supply pipe to the plasma processing chamber.

[0007] 进一步地,所述清洁方法包括如下步骤:在所述等离子体处理腔室的冷却气体供应管道内持续供应冷却气体至清洁结束。 [0007] Further, the cleaning method comprising the steps of: continuously supplying a cooling gas in the cooling gas supply pipe to the plasma processing chamber to the end of the cleaning.

[0008] 进一步地,所述冷却气体供应管道设置于基台之中,气体供应管道具有一喷气口,所述喷气口对着基片背面吹气。 [0008] Further, the cooling gas supply pipe being disposed within the base, a gas supply pipe having a nozzle hole, the nozzle hole is blown against the backside of the substrate.

[0009] 进一步地,所述冷却气体供应管道下方连接有一冷却气体供应装置。 [0009] Further, the cooling gas supply pipe is connected to the bottom of a cooling gas supply means.

[0010] 进一步地,所述冷却气体供应装置的下方还连接有一控制装置。 Below [0010] Further, the cooling gas supply device is also connected to a control means.

[0011] 进一步地,在所述冷却气体供应装置上游的冷却气体供应管道上还连接有一阀门。 [0011] Further, in the cooling gas supply conduit upstream of the cooling device is also connected to a gas supply valve.

[0012] 进一步地,所述供应冷却气体的压力为大于所述等离子体处理腔室执行清洁时的腔室内部压力。 [0012] Further, the pressure of the supply of cooling gas is greater than the internal pressure in the cleaning chamber is performed during plasma processing chamber.

[0013] 进一步地,所述供应冷却气体的压力的取值范围为1mT〜10T。 [0013] Further, the cooling gas supply pressure ranges 1mT~10T.

[0014] 进一步地,所述清洁气体为氧气。 [0014] Furthermore, the cleaning gas is oxygen.

[0015] 进一步地,所述冷却气体为氦气。 [0015] Further, the cooling gas is helium.

[0016] 本发明提供的等离子体处理腔室的清洁方法,能够在清洁的过程中保证氦气供应管道不会受到污染,不会因为清洁过程而在管道内壁沉积污染物,甚至被堵塞。 [0016] The plasma processing chamber cleaning method of the present invention provides, to ensure that the helium gas supply conduit is not contaminated, the cleaning process will not be deposited contaminants in the pipe wall, blocked even in a clean process.

附图说明 BRIEF DESCRIPTION

[0017] 图1是等离子体处理腔室的结构示意图; [0017] FIG. 1 is a schematic view of a plasma processing chamber;

[0018] 图2是现有技术的等离子体处理腔室的冷却气体供应系统的结构示意图; [0018] FIG. 2 is a schematic view of a cooling structure of a gas supply system of the plasma processing chamber prior art;

[0019] 图3是根据本发明一个具体实施例的等离子体处理腔室的冷却气体供应系统的结构示意图。 [0019] FIG. 3 is a schematic view of a cooling structure of a gas supply system of the plasma processing chamber according to embodiments of the present invention a particular embodiment.

具体实施方式 Detailed ways

[0020] 以下结合附图,对本发明的具体实施方式进行说明。 [0020] conjunction with the drawings, specific embodiments of the present invention will be described.

[0021] 要指出的是,“半导体工艺件”、“晶圆”和“基片”这些词在随后的说明中将被经常互换使用,在本发明中,它们都指在处理反应室内被加工的工艺件,工艺件不限于晶圆、衬底、基片、大面积平板基板等。 [0021] It is noted that, "semiconductor process device", "wafer" and "substrate" these words are often used interchangeably in the following description, in the present invention, they all refer to the reaction chamber is in the process processing technology member member is not limited to the wafer process, the substrate, the substrate, a large area flat panel substrates. 为了方便说明,本文在实施方式说明和图示中将主要以“基片”为例来作示例性说明。 For convenience of explanation, in the description herein and in the illustrated embodiment primarily "substrate" as an example to be illustrative.

[0022] 下文以等离子体刻蚀腔室为例进行说明,本领域技术人员应当理解,本发明不限于此,本发明广泛地适用于各种等离子体处理腔室,例如化学气相沉积腔室(CVD)等。 [0022] Hereinafter a plasma etch chamber is described as an example, those skilled in the art will appreciate that the present invention is not limited thereto, the present invention is broadly applicable to various plasma processing chamber, for example, chemical vapor deposition chamber ( CVD) and so on.

[0023] 图1示出了等离子体处理腔室的结构示意图,特别地,等离子体处理腔室为等离子体刻蚀腔室100。 [0023] FIG. 1 shows a schematic configuration of a plasma processing chamber, in particular, a plasma processing chamber is a plasma etch chamber 100. 等离子体刻蚀腔室100具有一个处理腔体(未示出),处理腔体基本上为柱形,且处理腔体侧壁102基本上垂直,处理腔体内具有相互平行设置的上电极和下电极。 Plasma etch process chamber 100 having a cavity (not shown), the processing chamber is substantially cylindrical, and the processing chamber 102 is substantially perpendicular to the side wall, the processing chamber having an upper and a lower electrode disposed parallel to each other electrode. 通常,在上电极与下电极之间的区域为处理区域P,该区域P将形成高频能量以点燃和维持等离子体。 Typically, in the region between the upper and lower electrodes for processing region P, the P region to form a high-frequency energy to ignite and sustain a plasma. 在基台106上方放置待要加工的基片W,该基片W可以是待要刻蚀或加工的半导体基片或者待要加工成平板显示器的玻璃平板。 The semiconductor substrate to be processed is placed over the base 106 of the substrate W, the substrate W can be etched or to be processed or to be processed into a flat panel display glass plate. 其中,所述基台106用于夹持基片W。 Wherein, the base station 106 for holding the substrate W. 反应气体从气体源103中被输入至处理腔体内的气体喷淋头109,一个或多个射频电源104可以被单独地施加在下电极上或同时被分别地施加在上电极与下电极上,用以将射频功率输送到下电极上或上电极与下电极上,从而在处理腔体内部产生大的电场。 The reaction gas from the gas source 103 is input to the process gas shower head cavity 109, one or more RF power source 104 may be separately or simultaneously applied to the lower electrode are respectively applied to the upper and lower electrodes, with in the RF power supplied to the lower electrode or the upper electrode and the lower electrode, thereby generating a large electric field in the processing chamber. 大多数电场线被包含在上电极和下电极之间的处理区域P内,此电场对少量存在于处理腔体内部的电子进行加速,使之与输入的反应气体的气体分子碰撞。 Most of the processing region P between the electric field lines are contained in the upper and lower electrodes, the electric field inside the electronic present in small amounts to accelerate the processing chamber, so that collisions with gas molecules of the reaction gas input. 这些碰撞导致反应气体的离子化和等离子体的激发,从而在处理腔体内产生等离子体。 These collisions result in ionization and excitation of a plasma of reactive gas to generate plasma in the process chamber. 反应气体的中性气体分子在经受这些强电场时失去了电子,留下带正电的离子。 Neutral gas molecules of the reaction gas is lost electrons when subjected to these strong electric field, leaving positively charged ions. 带正电的离子向着下电极方向加速,与被处理的基片中的中性物质结合,激发基片加工,即刻蚀、淀积等。 Positively charged ions to accelerate toward the lower direction of the electrode, in combination with neutral species in the substrate to be processed, the excitation substrate processing, i.e., etching, deposition or the like. 在等离子体刻蚀腔室100的合适的某个位置处设置有排气区域,排气区域与外置的排气装置(例如真空泵105)相连接,用以在处理过程中将用过的反应气体及副产品气体抽出腔室。 Exhaust means includes an exhaust region, an exhaust region and external (e.g., a vacuum pump 105) at a location suitable plasma etch chamber 100 is connected to the process used in the reaction gas and the byproduct gas extraction chamber. 其中,等离子体约束环107用于将等离子体约束于处理区域P内。 Wherein the plasma confinement ring 107 for confining the plasma in the processing region P. 腔室侧壁102上连接有接地端,其中设置有一电阻108。 The upper chamber has a side wall 102 connecting the ground terminal, a resistor 108 disposed therein.

[0024] 如图1所示,等离子体刻蚀腔室100还包括冷却气体供应管道101,所述冷却气体供应管道101竖直地设置于基台106之中。 [0024] 1, the plasma etch chamber 100 also includes a cooling gas supply pipe 101, the cooling gas supply pipe 101 is vertically disposed within the base 106. 其中,所述冷却气体供应管道101的长度足够横亘整个基台106,并且冷却气体供应管道101具有一喷气口,因此,所述喷气口能够对着其上放置的基片W背面吹气。 Wherein the length of the gas supply pipe 101 is cooled sufficiently spans the entire base station 106, and the cooling gas supply pipe 101 having a nozzle hole, and therefore, the injection port can be blown against the backside of the substrate W placed thereon. 冷却气体供应管道101下方还连接有一冷却气体供应装置110,用于向冷却气体供应管道101供应冷却气体。 Below the cooling gas supply pipe 101 is also connected to a cooling gas supply means 110 for supplying cooling gas to the cooling gas supply pipe 101. 冷却气体供应装置110下方连接有一控制装置111,用于控制冷却气体供应装置I1向冷却气体供应管道101供应冷却气体。 Below the cooling gas supply means 110 is connected with a control unit 111 for controlling the supply of cooling gas supply means 101 I1 supplying cooling gas to the cooling gas duct.

[0025] 图2是现有技术的等离子体处理腔室的冷却气体供应系统的结构示意图。 [0025] FIG. 2 is a schematic view of a cooling structure of a gas supply system of the plasma processing chamber prior art. 如图2所示,在基片W放置到等离子体刻蚀腔室100的基台106上进行制程的时候,基片W被夹持在基台106上,冷却气体通过冷却气体供应管道101对准基片W背面喷气,来调整基片W的温度。 As shown, the substrate W is placed from a process 2 to 106 on the base 100 of the plasma etch chamber when the substrate W is held on the base 106, the cooling gas through the cooling gas supply conduit 101 pairs the back surface of the substrate W quasi-jet, to adjust the temperature of the substrate W. 当等离子体刻蚀腔室100对特定数量的基片W进行制程后,会对腔室执行一个清洗步骤。 When the plasma etch chamber 100 for a specific number of substrates W from a process, will perform a chamber cleaning step. 然而,根据现有技术的机制,腔室里面的聚合物污染会一点点掉入冷却气体供应管道101,再加上冷却气体供应管道101 —直会被抽气和充气,一段时间后,整个冷却气体供应管道101都会被污染,成为颗粒污染的源头。 However, the mechanism according to the prior art, chamber contamination inside the polymer a little fall into the cooling gas supply pipe 101, together with the cooling gas supply pipe 101 - Direct are evacuation and filling, after a period of time, the entire cooling the gas supply pipe 101 will be contaminated, be a source of particle contamination. 如图2所示,现有技术在冷却气体管道101之上的气体供应装置110上游会设置一个保护装置112,保护装置112用于防止聚合物污染倒灌或者作为收集聚合物污染的装置,然后定期清洗甚至更换冷却气体,这增加了等离子体刻蚀腔室100的成本,并延长了等离子体刻蚀腔室100的停机时间,降低了等离子体刻蚀腔室100的使用率。 2, 110 will be disposed upstream of the gas supply over the prior art cooling gas duct means 101 in a protection device 112, protection device 112 for preventing the intrusion of contamination or polymer as a means for collecting contaminated polymer, and then periodically clean or even replace the cooling gas, which increases the cost of the plasma etch chamber 100, and extended downtime plasma etch chamber 100, reducing the utilization of plasma etch chamber 100. 其中,第一阀门al用于控制冷却气体供应装置110和冷却气体供应管道101之间的连通与否,第二阀门bl用于控制保护装置112的连通与否。 Wherein the first valve for controlling the supply of cooling gas al or not communication between the device 110 and the cooling gas supply pipe 101, a second valve for controlling the protection means in communication bl 112 or not.

[0026] 图3是根据本发明一个具体实施例的等离子体处理腔室的冷却气体供应系统的结构示意图。 [0026] FIG. 3 is a schematic view of a cooling structure of a gas supply system of the plasma processing chamber according to embodiments of the present invention a particular embodiment. 根据分析,在基片W的制程过程中,基台106上夹持有基片W,并且冷却气体供应管道101之中一直供应着冷却气体,此时聚合物污染不可能掉入冷却气体供应管道101里。 According to the analysis, the process during the manufacturing process of the substrate W, the clip held on the base 106 of the substrate W, and in the cooling gas supply pipe 101 has been supplied with cooling gas, at this time the polymer was cooled gas supply conduit pollution impossible fall 101 years. 因此,判断聚合物污染只有在对腔室执行清洁制程时才有可能掉入冷却气体供应管道101里。 Thus, contamination of the polymer is determined only during execution of the cleaning process chamber possible fall in the cooling gas supply pipe 101. 事实上,在对腔室执行清洁制程时冷却气体供应管道101是不流冷却气体的。 In fact, when performing the cleaning process chamber of the cooling gas supply pipe 101 is not the cooling gas flow. 有了上面的判断,在在对腔室执行清洁制程时在冷却气体供应管道101中流一定量的冷却气体,冷却气体供应管道101中的压力稍微大于腔室内部的压力,就可以完全防止聚合物污染掉入冷却气体供应管道101中,最终彻底解决冷却气体供应管道101被污染的问题。 With the above determination, when the cleaning is performed at a pressure in the process chamber of the cooling gas flows through the cooling gas supply pipe 101 a certain amount of pressure of the cooling gas supply pipe 101 is slightly larger than the interior of the chamber, the polymer can be prevented entirely pollution fall into the cooling gas supply pipe 101, and ultimately solve the cooling gas supply pipe 101 is pollution.

[0027] 本发明第一方面提供了一种用于等离子体处理腔室的清洁方法,其中,通过等离子体处理腔室的气体喷淋头向腔室内部通入清洁气体,然后施加射频能量将清洁气体激发成等离子体对腔室内部进行清洁。 [0027] The first aspect of the present invention provides a cleaning method of a plasma processing chamber, in which, through the cleaning gas into the chamber through the gas shower head of the plasma processing chamber, the RF energy is then applied cleaning gas into a plasma excitation inside of the chamber for cleaning. 其中,在所述等离子体处理腔室的冷却气体供应管道201内持续供应冷却气体。 Wherein a continuous supply of cooling gas in the cooling gas supply pipe 201 of the plasma processing chamber. 根据本发明一个优选实施例,所述清洁方法包括如下步骤:在所述等离子体处理腔室的冷却气体供应管道201内持续供应冷却气体至清洁结束。 According to a preferred embodiment of the present invention, the cleaning method comprising the steps of: continuously supplying a cooling gas in the cooling gas supply pipe 201 of the plasma processing chamber to the end of the cleaning.

[0028] 进一步地,所述冷却气体供应管道201设置于基台206之中,冷却气体供应管道201具有一喷气口,所述喷气口对着基片W背面吹气。 [0028] Further, the cooling gas supply pipe 201 being disposed on the base 206, the cooling gas supply pipe 201 having a nozzle hole, the nozzle hole is blown against the backside of the substrate W.

[0029] 进一步地,所述冷却气体供应管道201下方连接有一冷却气体供应装置210,用于供应冷却气体至冷却气体供应管道201。 [0029] Further, the cooling of the cooling gas supply pipe 201 is connected to a cooling gas supply device 210 downward gas supply pipe 201 for supplying the cooling gas to.

[0030] 进一步地,所述冷却气体供应装置210的下方还连接有一控制装置211,其用于控制冷却气体供应装置210往冷却气体供应管道201供应冷却气体。 [0030] Further, the cooling gas is supplied below the device 210 is also connected to a control unit 211 for controlling the supply of cooling gas to the cooling gas supply device 210 supplies the cooling gas duct 201. 其中,在冷却气体供应装置210上有的冷却气体供应管道201之中还设置有一阀门a2。 Wherein, in the cooling gas supply pipe 201 and some 210 of the cooling gas supply device is further provided with a valve a2.

[0031] 进一步地,所述供应冷却气体的压力为大于所述等离子体处理腔室执行清洁时的腔室内部压力。 [0031] Further, the pressure of the supply of cooling gas is greater than the internal pressure in the cleaning chamber is performed during plasma processing chamber.

[0032] 进一步地,所述供应冷却气体的压力的取值范围为1mT〜10T。 [0032] Further, the cooling gas supply pressure ranges 1mT~10T. 示例性地,所述供应冷却气体的压力的取值范围包括20mT、80mT、2T、5T、5.6T、8T等。 Illustratively, the supply pressure of the cooling gas comprises in the range 20mT, 80mT, 2T, 5T, 5.6T, 8T like.

[0033] 进一步地,所述清洁气体为氧气。 [0033] Furthermore, the cleaning gas is oxygen.

[0034] 进一步地,所述冷却气体为氦气。 [0034] Further, the cooling gas is helium.

[0035] 本发明提供的等离子体处理腔室的清洁方法,能够在清洁的过程中保证氦气供应管道不会受到污染,不会因为清洁过程而在管道内壁沉积污染物,甚至被堵塞。 [0035] The plasma processing chamber cleaning method of the present invention provides, to ensure that the helium gas supply conduit is not contaminated, the cleaning process will not be deposited contaminants in the pipe wall, blocked even in a clean process. 并且,无需设置任何保护装置,用于防止聚合物污染倒灌或者作为收集聚合物污染的装置,然后定期清洗甚至更换冷却气体,这降低了等离子体刻蚀腔室的成本,并延长了等离子体刻蚀腔室的停机时间,降低了等离子体刻蚀腔室的使用率。 Further, without providing any protection means for preventing the intrusion of contamination of the polymer or polymers used as means for collecting contaminated, even regular cleaning and replacement of the cooling gas, which reduces the cost of the plasma etch chamber, and extended plasma carved etch chamber downtime, reduce the usage plasma etch chamber.

[0036] 尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。 [0036] While the present invention have been described in detail by the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. 在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。 After the skilled artisan reading the foregoing, various modifications and alternatives to the present invention will be apparent. 因此,本发明的保护范围应由所附的权利要求来限定。 Accordingly, the scope of the invention be defined by the appended claims. 此外,不应将权利要求中的任何附图标记视为限制所涉及的权利要求;“包括”一词不排除其它权利要求或说明书中未列出的装置或步骤;“第一”、“第二”等词语仅用来表示名称,而并不表示任何特定的顺序。 Further, in the claims should not be considered as any reference numerals as claimed in claim limitations involved; "comprising" does not exclude other steps or apparatus as claimed in claim or the specification are not listed; "first," "second two "and other terms are only used to indicate the name, but does not indicate any particular sequence.

Claims (10)

  1. 1.一种用于等离子体处理腔室的清洁方法,其中,通过等离子体处理腔室的气体喷淋头向腔室内部通入清洁气体,然后施加射频能量将清洁气体激发成等离子体对腔室内部进行清洁,其特征在于,所述清洁方法包括如下步骤:在所述等离子体处理腔室的冷却气体供应管道内持续供应冷却气体。 1. A cleaning method for a plasma processing chamber, wherein the cleaning gas introduced into the chamber through the gas to the inside of the shower head of the plasma processing chamber, and then applying RF energy to excite the plasma cleaning gas chamber cleaning the internal chamber, characterized in that, said cleaning method comprising the steps of: continuously supplying a cooling gas in the cooling gas supply pipe to the plasma processing chamber.
  2. 2.根据权利要求1所述的清洁方法,其特征在于,所述清洁方法包括如下步骤:在所述等离子体处理腔室的冷却气体供应管道内持续供应冷却气体至清洁结束。 2. A cleaning method according to claim 1, wherein said cleaning method comprising the steps of: continuously supplying a cooling gas in the cooling gas supply pipe to the plasma processing chamber to the end of the cleaning.
  3. 3.根据权利要求1所述的清洁方法,其特征在于,所述冷却气体供应管道设置于基台之中,气体供应管道具有一喷气口,所述喷气口对着基片背面吹气。 3. The method of cleaning according to claim 1, characterized in that the cooling gas supply pipe is provided in the base station in the gas supply pipe having a nozzle hole, the nozzle hole is blown against the backside of the substrate.
  4. 4.根据权利要求3所述的清洁方法,其特征在于,所述冷却气体供应管道下方连接有一冷却气体供应装置。 4. A cleaning method according to claim 3, wherein the cooling means a cooling gas supply pipe is connected to the bottom of the gas supply.
  5. 5.根据权利要求4所述的清洁方法,其特征在于,所述冷却气体供应装置的下方还连接有一控制装置。 The cleaning method according to claim 4, characterized in that, below the cooling gas supply device is also connected to a control means.
  6. 6.根据权利要求4所述的清洁方法,其特征在于,在所述冷却气体供应装置上游的冷却气体供应管道上还连接有一阀门。 6. The cleaning method as claimed in claim 4, characterized in that the cooling gas supply conduit upstream of the cooling device is also connected to a gas supply valve.
  7. 7.根据权利要求1所述的清洁方法,其特征在于,所述供应冷却气体的压力为大于所述等离子体处理腔室执行清洁时的腔室内部压力。 7. The cleaning method according to claim 1, wherein said cooling gas supply pressure is greater than the internal pressure in the cleaning chamber is performed during plasma processing chamber.
  8. 8.根据权利要求7所述的清洁方法,其特征在于,所述供应冷却气体的压力的取值范围为1mT〜1T0 8. The ranging method of cleaning according to claim 7, wherein said cooling gas supply pressure is 1mT~1T0
  9. 9.根据权利要求1所述的清洁方法,其特征在于,所述清洁气体为氧气。 9. A cleaning method according to claim 1, wherein the cleaning gas is oxygen.
  10. 10.根据权利要求1所述的清洁方法,其特征在于,所述冷却气体为氦气。 10. The cleaning method of claim 1, wherein said cooling gas is helium.
CN 201310745043 2013-12-30 2013-12-30 Cleaning method for plasma-processing chamber CN104752258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201310745043 CN104752258A (en) 2013-12-30 2013-12-30 Cleaning method for plasma-processing chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN 201310745043 CN104752258A (en) 2013-12-30 2013-12-30 Cleaning method for plasma-processing chamber
TW103142801A TWI545222B (en) 2013-12-30 2014-12-09

Publications (1)

Publication Number Publication Date
CN104752258A true true CN104752258A (en) 2015-07-01

Family

ID=53591758

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201310745043 CN104752258A (en) 2013-12-30 2013-12-30 Cleaning method for plasma-processing chamber

Country Status (1)

Country Link
CN (1) CN104752258A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019903A1 (en) * 1996-12-23 2001-09-06 Paul Kevin Shufflebotham Inductively coupled plasma CVD
JP2002222799A (en) * 2001-01-25 2002-08-09 Tokyo Electron Ltd Plasma treatment device and its cleaning method, and discharging method of electrostatic chuck
US20030183244A1 (en) * 2002-04-02 2003-10-02 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
CN1480998A (en) * 2002-07-08 2004-03-10 三星电子株式会社 Method for forming silica layer on substrate by adopting atomic layer deposition technique
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
CN101207061A (en) * 2006-12-15 2008-06-25 东京毅力科创株式会社 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010019903A1 (en) * 1996-12-23 2001-09-06 Paul Kevin Shufflebotham Inductively coupled plasma CVD
JP2002222799A (en) * 2001-01-25 2002-08-09 Tokyo Electron Ltd Plasma treatment device and its cleaning method, and discharging method of electrostatic chuck
US20030183244A1 (en) * 2002-04-02 2003-10-02 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
CN1480998A (en) * 2002-07-08 2004-03-10 三星电子株式会社 Method for forming silica layer on substrate by adopting atomic layer deposition technique
US20060000552A1 (en) * 2004-07-05 2006-01-05 Tokyo Electron Limited Plasma processing apparatus and cleaning method thereof
CN101207061A (en) * 2006-12-15 2008-06-25 东京毅力科创株式会社 Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism

Similar Documents

Publication Publication Date Title
US9245762B2 (en) Procedure for etch rate consistency
US20040168769A1 (en) Plasma processing equipment and plasma processing method
US20160104606A1 (en) Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9362130B2 (en) Enhanced etching processes using remote plasma sources
US9349605B1 (en) Oxide etch selectivity systems and methods
US20060060303A1 (en) Plasma processing system and method
US20140227881A1 (en) Semiconductor processing systems having multiple plasma configurations
US6758224B2 (en) Method of cleaning CVD device
US20060266288A1 (en) High plasma utilization for remote plasma clean
US20110198034A1 (en) Gas distribution showerhead with coating material for semiconductor processing
US20130059448A1 (en) Pulsed Plasma Chamber in Dual Chamber Configuration
JP2011154973A (en) Plasma treatment device and plasma treatment method
JP2010219491A (en) Plasma etching method, plasma etching apparatus, and storage medium
US20170229291A1 (en) Methods and systems to enhance process uniformity
US20140209027A1 (en) Showerhead having a detachable gas distribution plate
US9773648B2 (en) Dual discharge modes operation for remote plasma
JP2005197467A (en) Substrate processor and cleaning method therefor
JP2008244274A (en) The plasma processing apparatus
US20080213504A1 (en) Plasma Film-Forming Apparatus and Plasma Film-Forming Method
JPH10149989A (en) Technique for cleaning deposition chamber using high-output remote excitation source
US20120152914A1 (en) Plasma processing apparatus, plasma processing method, and non-transitory computer-readable medium
JP2008117982A (en) Mounting device, plasma processing device, and plasma processing method
JP2006120926A (en) Plasma processing apparatus
JP2010103455A (en) Plasma processing apparatus
JP2011108615A (en) Plasma treatment device

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination