CN102896114A - Novel normal-pressure double-medium blocking flat-opening type active free radical cleaning equipment - Google Patents
Novel normal-pressure double-medium blocking flat-opening type active free radical cleaning equipment Download PDFInfo
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- CN102896114A CN102896114A CN2011102094279A CN201110209427A CN102896114A CN 102896114 A CN102896114 A CN 102896114A CN 2011102094279 A CN2011102094279 A CN 2011102094279A CN 201110209427 A CN201110209427 A CN 201110209427A CN 102896114 A CN102896114 A CN 102896114A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 150000003254 radicals Chemical class 0.000 title claims abstract description 41
- 230000000903 blocking effect Effects 0.000 title 1
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000005416 organic matter Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 150000003376 silicon Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a novel normal-pressure double-dielectric-barrier flat-opening type active free radical cleaning device which comprises a high-voltage electrode, a dielectric barrier layer, a grounding electrode, a power supply, a movable manipulator and an air inlet and exhaust system. The equipment is characterized in that the high-voltage electrode and the ground electrode are respectively wrapped by a medium barrier layer, discharge can be generated in a gap between the high-voltage electrode and the ground electrode under normal pressure to generate plasma, high-activity free radicals generated in a discharge area are ejected out from a flat-mouth-shaped nozzle under the drive of airflow with certain pressure, and organic substances on the surface of an object to be treated are removed when the high-activity free radicals are ejected to the surface of the object to be treated. The active free radical produced by the invention can be used for silicon wafer damage-free photoresist removal and organic matter cleaning.
Description
Technical field
The present invention relates to a kind of novel flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block cleaning equipment, especially refer to that this equipment is that high-field electrode and ground electrode are attached to respectively and are shaped as two L shaped dielectric barrier both sides, between these two dielectric barriers, be provided with a discharging gap, free radical is produced by discharging gap, and carry ejection by the air-flow of certain air pressure, form a flat high concentration active group line of willing mouthful, be used for the photoresist on the silicon chip and organic matter are scanned cleaning.
Background technology
Along with the development of large scale integrated circuit, the improving constantly of integrated level, constantly the reducing of live width, also more and more higher to the requirement that the not damaged of silicon chip cleans.In silicon transistor and integrated circuit production, almost every procedure has the problem of Wafer Cleaning, the quality of Wafer Cleaning seriously influences device performance, deal with improperly, whole silicon chips are scrapped, can not make pipe, perhaps produced device performance is inferior, and stability and reliability are very poor.Therefore silicon chip being carried out undamaged cleaning has great significance.
That commonly uses at present removes photoresist and cleaning method, by wet method and dry method dual mode.There are many shortcomings in the wet-cleaning wet-cleaning: for example: (1) can not accurately be controlled; (2) cleaning is not thorough, needs repeatedly to clean; (3) introduce easily new impurity; (4) can not process residue; (5) contaminated environment needs waste liquid is processed; (6) consume a large amount of acid and water.In the dry method cleaning of plasma, do not use any chemical solvent, therefore essentially no pollutant is conducive to environmental protection.In addition, its production cost is lower, cleans to have good uniformity and repeated, controllability, easily realizes batch production.But dry method commonly used is removed photoresist and cleaning equipment at present, under vacuum state, use plasma that silicon chip surface is directly cleaned, ion in the plasma can cause very large damage to the etching lines of silicon chip surface like this, be not applicable to 32nm and following node technology, and, because its use is vacuum equipment, this will be so that equipment cost be high, complex operation.
In recent years, people begin under atmospheric pressure to carry out experimental facilities and the technical study that photoresist cleans, but, currently used plasma generator, it all is the form that adopts radio frequency discharge, working gas can only be to adopt helium and oxygen, or the mist of argon and oxygen, and wherein the shared ratio of oxygen is less than 3%.Because a large amount of inert gases that adopt cause the application cost of working gas very high.
In addition, recently the medium barrier plasma generator that adopts of people generally is the plasma generator that adopts single dielectric impedance, and one of them electrode is to adopt metal electrode, cause electrode erosion easily after, bring the electrode fouling when cleaning.
The present invention has designed the device that produces free radical under the normal pressure, is the plasma discharge form that adopts bi-medium to block, and two sparking electrodes are all coated by medium, can not bring the electrode erosion problem.The free radical beam cleaning that produces can bring any damage hardly to the surface device of silicon chip.
Summary of the invention
A kind of novel flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block cleaning equipment comprises housing, high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator and an intake and exhaust system.The characteristic of this equipment is to be provided with a high-field electrode and ground electrode in a rectangular housing, be provided with two dielectric barriers between these two electrodes, between these two dielectric barriers, be provided with a discharging gap and produce plasma, under the air-flow of certain pressure drives, the high mars free radical that discharging gap produces is ejected by flat shape of the mouth as one speaks spout, when being ejected into need body surface to be processed, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: be provided with two dielectric barriers between high-field electrode and ground electrode, the shape of these two dielectric barriers all is L shaped, be provided with a discharging gap between these two dielectric barriers, the range scale in this gap is the 0.5-5 millimeter.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: an end of the discharging gap between two dielectric barriers connects by tracheae and air supply source, the other end forms a strip spout, is provided with the insulating materials sealing in the both sides of discharging gap.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: this high-field electrode and ground electrode respectively note overlay on the both sides of two dielectric barriers, high-field electrode is connected with a high-frequency and high-voltage power supply, and ground electrode is connected with housing and connects the earth.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: the output P-to-P voltage value of this high-frequency and high-voltage power supply is greater than 3000 volts.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: the gas that region of discharge adopts is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liter/mins of clocks.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: this free-radical generator equipment can be realized three-dimensional movement by manipulator control.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: this equipment is provided with hood and discharge duct, makes remaining free radical beam and discharges with the reacted product of organic matter.
The flat shape of the mouth as one speaks living radical of described normal pressure bi-medium to block cleaning equipment, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
The flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block of the present invention cleaning equipment, its advantage is: 1, adopt the discharge of bi-medium to block form, the discharge that can produce accurate aura under normal pressure more is conducive to produce the plasma of high number of free radical.2, caused electrode erosion does not pollute in the time of can not bringing the metal electrode discharge.3, adopt the high frequency electric source discharge, cheap with the radio-frequency power supply comparative price of equal-wattage.4, employing can have the robot device of three degree of freedom, can scan uniformly 8 inches and above silicon chip surface to remove photoresist and clean.5, this equipment does not need to vacuumize, and has improved production efficiency, lower production cost.
Main application of the present invention is to be used in the integrated circuit fabrication process, when single silicon chip is cleaned, and the photoresist on the cleaning silicon chip and organic pollution.In addition, it also can be used for the organic matter of other physical surface is cleaned.
[description of drawings]
Fig. 1 Facad structure cross-sectional schematic of the present invention.
Fig. 2 plasma generator vertical view cutaway drawing of the present invention.
See also Fig. 1 Fig. 2, the flat shape of the mouth as one speaks living radical of normal pressure bi-medium to block of the present invention cleaning equipment comprises a housing 100, high-field electrode 101, dielectric barrier 105, earth electrode 104, power supply 103, manipulator support 205, mobile manipulator 204, air supply source 102, hood 110, silicon chip 202, heater 203 etc.
Be provided with a high-field electrode 101 and a ground electrode 104 in the plasma generator housing 100, between these two electrodes, be provided with two dielectric barriers 105, between these two dielectric barriers 105, be provided with a discharging gap 107 and produce plasma, under the air-flow of certain pressure drove, the high mars free radical that discharging gap 107 produces was ejected by flat shape of the mouth as one speaks spout 109.
The clean gas that air supply source 102 provides enters into the space 107 of plasma generator by inlet channel 112, the ionization that is stimulated produces plasma and free radical, this plasma is combined into free radical beam through collision after leaving region of discharge, and be ejected into certain speed on the photoresist 201 on silicon chip 202 surfaces, react formation C with photoresist
2O and H
2The byproducts of reaction such as O, and by hood 110 and 108 discharges of connected discharge duct.
In cleaning process, the temperature of silicon chip 202 is to be heated in 200 ℃ the scope by heater 203.Temperature by heating silicon chip 202 can improve the reaction cleaning speed.
Consult Fig. 1 and Fig. 2, high-field electrode 101 and ground electrode 104 are plate, the dielectric impedance material 105 of L-type is to be coated on respectively a relative side of two electrodes and the end of spout, adopt insulating materials 106 fixed electrodes, dielectric and housing, and form the gap 107 of discharge at the both sides of electrode two dielectric impedance materials of isolation, spout be shaped as the flat degree of lip-rounding.
Invention has been described in conjunction with specific embodiments with reference to the accompanying drawings for the above, yet, need to prove, for a person skilled in the art, in the situation that does not break away from the spirit and scope of the present invention, can make many changes and modification to above-described embodiment, these changes and modification all drop in the claim restricted portion of the present invention.
Claims (9)
1. the novel flat shape of the mouth as one speaks living radical of a normal pressure bi-medium to block cleaning equipment comprises housing, high-field electrode, dielectric barrier, earth electrode, power supply, mobile manipulator and an intake and exhaust system.The characteristic of this equipment is to be provided with a high-field electrode and ground electrode in a rectangular housing, be provided with two dielectric barriers between these two electrodes, between these two dielectric barriers, be provided with a discharging gap and produce plasma, under the air-flow of certain pressure drives, the high mars free radical that discharging gap produces is ejected by flat shape of the mouth as one speaks spout, when being ejected into need body surface to be processed, remove the organic substance of body surface.The living radical that the present invention produces can be used for the silicon chip not damaged and removes photoresist and the organic matter cleaning.
2. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: be provided with two dielectric barriers between high-field electrode and ground electrode, the shape of these two dielectric barriers all is L shaped, be provided with a discharging gap between these two dielectric barriers, the range scale in this gap is the 0.5-5 millimeter.
3. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: an end of the discharging gap between two dielectric barriers connects by tracheae and air supply source, the other end forms a strip spout, is provided with the insulating materials sealing in the both sides of discharging gap.
4. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: this high-field electrode and ground electrode respectively note overlay on the both sides of two dielectric barriers, high-field electrode is connected with a high-frequency and high-voltage power supply, and ground electrode is connected with housing and connects the earth.
5. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: the output P-to-P voltage value of this high-frequency and high-voltage power supply is greater than 3000 volts.
6. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: the gas that region of discharge adopts is the argon oxygen gas mixture, also can is oxygen or clean air that the flow of gas is greater than 5 liter/mins of clocks.
7. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: this free-radical generator equipment can be realized three-dimensional movement by manipulator control.
8. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: this equipment is provided with hood and discharge duct, makes remaining free radical beam and discharges with the reacted product of organic matter.
9. such as the flat shape of the mouth as one speaks living radical of right 1 described normal pressure bi-medium to block cleaning equipment, its characteristic is: this silicon chip substrate has heater, and when cleaning, the temperature of silicon chip can be heated in 200 ℃.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102094279A CN102896114A (en) | 2011-07-26 | 2011-07-26 | Novel normal-pressure double-medium blocking flat-opening type active free radical cleaning equipment |
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| CN2011102094279A CN102896114A (en) | 2011-07-26 | 2011-07-26 | Novel normal-pressure double-medium blocking flat-opening type active free radical cleaning equipment |
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| CN102896114A true CN102896114A (en) | 2013-01-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111438137A (en) * | 2020-04-03 | 2020-07-24 | 中芯集成电路制造(绍兴)有限公司 | Manipulator cleaning system and wet machine table |
| CN113207216A (en) * | 2021-05-25 | 2021-08-03 | 四川大学 | Plasma source for surface cleaning and repairing |
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| WO2009074546A1 (en) * | 2007-12-10 | 2009-06-18 | Construction Research & Technology Gmbh | Method and device for the treatment of surfaces |
| US20100308730A1 (en) * | 2004-05-28 | 2010-12-09 | Mohamed Abdel-Aleam H | Method and device for creating a micro plasma jet |
| CN102085520A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure double-medium blocking flat-opening type active free radical cleaning system |
| CN102085521A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure medium blocking type active free radical cleaning system |
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2011
- 2011-07-26 CN CN2011102094279A patent/CN102896114A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2604845Y (en) * | 2003-01-27 | 2004-02-25 | 王守国 | Atmospheric radio-frequency and DC mixed cold plasma generator |
| US20100308730A1 (en) * | 2004-05-28 | 2010-12-09 | Mohamed Abdel-Aleam H | Method and device for creating a micro plasma jet |
| CN1777346A (en) * | 2004-11-15 | 2006-05-24 | K.C.科技股份有限公司 | Plama electrode structure,plasma source and plasma treatment device |
| WO2009074546A1 (en) * | 2007-12-10 | 2009-06-18 | Construction Research & Technology Gmbh | Method and device for the treatment of surfaces |
| CN102085520A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure double-medium blocking flat-opening type active free radical cleaning system |
| CN102085521A (en) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | Normal-pressure medium blocking type active free radical cleaning system |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111438137A (en) * | 2020-04-03 | 2020-07-24 | 中芯集成电路制造(绍兴)有限公司 | Manipulator cleaning system and wet machine table |
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| CN113207216B (en) * | 2021-05-25 | 2022-02-11 | 四川大学 | Plasma source for surface cleaning and repairing |
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Application publication date: 20130130 |