CN102891071A - Novel atmospheric pressure plasma free-radical cleaning spray gun - Google Patents
Novel atmospheric pressure plasma free-radical cleaning spray gun Download PDFInfo
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- CN102891071A CN102891071A CN 201110200246 CN201110200246A CN102891071A CN 102891071 A CN102891071 A CN 102891071A CN 201110200246 CN201110200246 CN 201110200246 CN 201110200246 A CN201110200246 A CN 201110200246A CN 102891071 A CN102891071 A CN 102891071A
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Abstract
The invention discloses a novel atmospheric pressure plasma free-radical cleaning spray gun. The spray gun comprises two radio-frequency electrodes, a dielectric barrier layer, three grounding electrodes and a radio-frequency power supply, and is characterized in that the radio-frequency electrodes and the grounding electrodes are arranged alternatively in arrays, thereby forming four spray nozzles; the radio-frequency electrodes are covered by the dielectric barrier layer; and a mixed gas of argon and oxygen is used as the working gas. Under the atmospheric pressure, when the radio-frequency electrodes are connected with the radio-frequency power supply and the grounding electrodes are grounded, the mixed gas of the argon and the oxygen between the radio-frequency electrodes and the grounding electrodes is broken down to generate glow plasmas; and meanwhile, the upper end of the spray gun is connected with a gas inlet port, the lower end is provided with the spray nozzles and the four sides are sealed by metal plates, so high-density plasma free radicals generated in an electrode area are sprayed out from the spray nozzles under the carrying of airflow.
Description
[technical field]
The present invention relates to a kind of novel normal pressure plasma free radical cleaning spray gun, spray gun produces plasma by dielectric barrier discharge, four spouts by the spray gun lower end under certain pressure spray, form high concentration living radical line, behind the surfaces such as arrival silicon chip, react with photoresist or other organic substance, reach the purpose on the surfaces such as cleaning silicon chip.
[background technology]
In microelectronics industry, the cleaning of silicon chip photoresist is very important link in the whole technique.Photoresist cleaning method commonly used has wet method and dry method dual mode.What adopt traditionally is wet chemistry methods, and existence can not accurately be controlled, clean not thoroughly, need repeatedly to clean, introduce easily the new shortcomings such as impurity, and can cause environmental pollution.Present dry method is removed photoresist and is carried out under vacuum state, equipment operating is complicated, cost is high, the plasma that produces is easily to the etching lines injury of silicon chip surface, along with further reducing of micro element characteristic size, the wet method and the dry lithography glue cleaning technique that adopt at present face increasing difficulty, can not be suitable for the following technology of 32nm node.
The application of new material has also brought the hard problem that removes photoresist in addition.Such as: strong oxidizer can cause the serious denitrogenation of hafnium base high-K gate dielectric film etc.
The present invention has introduced a kind of novel normal pressure plasma free radical cleaning spray gun.Two radio frequency electrodes and three grounding electrodes of spray gun are alternately array.The plasma discharge of spray gun has adopted the radio frequency discharge form of dielectric impedance, with the mist of argon gas and oxygen as working gas, produce the high density free radical beam, and be ejected into by four spouts on the surface such as silicon chip, reach cleaning photoetching glue or other organic purpose.
[summary of the invention]
A kind of novel normal pressure plasma free radical cleaning spray gun comprises two radio frequency electrodes, dielectric barrier, three grounding electrodes and a radio-frequency power supply.
Described normal pressure plasma free radical cleaning spray gun is characterized in that three grounding electrodes are made by flat metal.Grounding electrode is connected with the metal shell of spray gun and ground connection.
Described normal pressure plasma free radical cleaning spray gun is characterized in that two radio frequency electrodes are coated by dielectric barrier, and the dielectric impedance layer material is pottery, and dielectric barrier and grounding electrode gap are 1.0-1.5mm.
Described normal pressure plasma free radical cleaning spray gun is characterized in that two radio frequency electrodes are connected with radio-frequency power supply.
Described normal pressure plasma free radical cleaning spray gun is characterized in that two radio frequency electrodes adopting and three grounding electrodes are alternately to be spaced that form four spouts, each spout all can spray highdensity free radical.
Described normal pressure plasma free radical cleaning spray gun, it is characterized in that: the working gas of plasma discharge is the argon oxygen gas mixture, gas flow is 10-15 liter/min of clock, the free radical beam of discharge generation is sprayed by spout, free radical beam does not contain ion component, can carry out not damaged to silicon chip etc. and clean.
[description of drawings]
Fig. 1 is a kind of novel normal pressure plasma free radical cleaning spray gun principle schematic of the present invention.
See also Fig. 1, this normal pressure plasma free radical cleaning spray gun comprises two radio frequency electrodes 104, coats dielectric barrier 103, three grounding electrodes 105, radio-frequency power supply 102, housing 101, air supply source 106, flowmeter 107 and a supply air line 108 of radio frequency electrode.Three grounding electrodes are connected housing and are connected with ground connection.Air supply source 108 provides argon gas and oxygen, form by a certain percentage mist during gas process flowmeter 107, mist is behind supply conduit 108, enter uniformly the gap between grounding electrode 105 and the dielectric barrier 103, after radio frequency electrode 104 and radio-frequency power supply 102 are connected, all produce plasma in four gaps, free radical 109 in the plasma sprays from spout under air-flow carries, arrive the surfaces such as silicon chip, photoresist or the reaction of other organic substance with the surface generate the products such as oxide and water.
Fig. 2 is a kind of novel normal pressure plasma free radical cleaning spray gun structure chart of the present invention.
See also Fig. 2, this normal pressure plasma free radical cleaning spray gun, working gas enters spray gun inside by the air inlet 202 of upper end, grounding electrode 105 and to be coated between the outer dielectric barrier 103 of radio frequency electrode be four spouts, the plasma free radical that produces from the spout ejection of spray gun lower end, is isolated by collets 201 between radio frequency electrode and the ground connection housing 101 under the carrying of air-flow.
Invention has been described in conjunction with specific embodiments with reference to the accompanying drawings for the above, yet, need to prove, for a person skilled in the art, in the situation that does not break away from the spirit and scope of the present invention, can make many changes and modification to above-mentioned enforcement, these changes and modification all drop in the claim restricted portion of the present invention.
Claims (5)
1. novel normal pressure plasma free radical cleaning spray gun, comprise two radio frequency electrodes, dielectric barrier, three grounding electrodes and a radio-frequency power supply, it is characterized in that: radio frequency electrode and grounding electrode are alternately arrayed, form four spouts, radio frequency electrode is wrapped up by dielectric barrier, working gas adopts the mist of argon gas and oxygen, under the normal pressure, be connected with radio-frequency power supply and during grounding electrode ground connection in radio frequency electrode, between radio frequency electrode and grounding electrode, puncture the mist of argon oxygen, produce glow plasma, this spray gun upper end taps into gas port, the lower end is spout, and with the metallic plate sealing, the high-density plasma free radical that electrode district produces is outwards sprayed by spout under the carrying of air-flow all around.
2. such as right 1 described normal pressure plasma free radical cleaning spray gun, it is characterized in that: three grounding electrodes are made by flat metal, and grounding electrode is connected with the spray gun metal shell and ground connection.
3. such as right 1 described normal pressure plasma free radical cleaning spray gun, it is characterized in that: two radio frequency electrodes are coated by dielectric barrier, and the dielectric impedance layer material is pottery, and dielectric barrier and grounding electrode gap are 1.0-1.5mm.
4. such as right 1 described normal pressure plasma free radical cleaning spray gun, it is characterized in that: two radio frequency electrodes of employing and three grounding electrodes are alternately and are spaced, and form four spouts, and each spout all can spray highdensity free radical.
5. such as right 1 described normal pressure plasma free radical cleaning spray gun, it is characterized in that: the working gas of plasma discharge is the argon oxygen gas mixture, gas flow is 10-15 liter/min of clock, the free radical beam of discharge generation is sprayed by spout, free radical beam does not contain ion component, can carry out not damaged to silicon chip etc. and clean.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110200246 CN102891071A (en) | 2011-07-18 | 2011-07-18 | Novel atmospheric pressure plasma free-radical cleaning spray gun |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110200246 CN102891071A (en) | 2011-07-18 | 2011-07-18 | Novel atmospheric pressure plasma free-radical cleaning spray gun |
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| Publication Number | Publication Date |
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| CN102891071A true CN102891071A (en) | 2013-01-23 |
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| CN 201110200246 Pending CN102891071A (en) | 2011-07-18 | 2011-07-18 | Novel atmospheric pressure plasma free-radical cleaning spray gun |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103997842A (en) * | 2014-03-25 | 2014-08-20 | 中国科学院电工研究所 | Method of improving space uniformity of atmospheric pressure plasma jet array |
| CN110042348A (en) * | 2019-03-12 | 2019-07-23 | 深圳奥拦科技有限责任公司 | Plasma surface processing device and method |
| CN111495880A (en) * | 2020-04-01 | 2020-08-07 | 武汉大学 | Laser plasma composite cleaning device in MOVCD |
| CN114501761A (en) * | 2022-02-10 | 2022-05-13 | 大连理工大学 | Atmospheric pressure pulse discharge plasma generating device of suspension conductive electrode |
| CN114823289A (en) * | 2022-05-15 | 2022-07-29 | 安徽森米诺农业科技有限公司 | Efficient cleaning process for semiconductor wafer |
| CN115164314A (en) * | 2022-07-11 | 2022-10-11 | 中电科奥义健康科技有限公司 | Hydrated free radical generating device for inhibiting generation of ozone |
-
2011
- 2011-07-18 CN CN 201110200246 patent/CN102891071A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103997842A (en) * | 2014-03-25 | 2014-08-20 | 中国科学院电工研究所 | Method of improving space uniformity of atmospheric pressure plasma jet array |
| CN110042348A (en) * | 2019-03-12 | 2019-07-23 | 深圳奥拦科技有限责任公司 | Plasma surface processing device and method |
| CN111495880A (en) * | 2020-04-01 | 2020-08-07 | 武汉大学 | Laser plasma composite cleaning device in MOVCD |
| CN114501761A (en) * | 2022-02-10 | 2022-05-13 | 大连理工大学 | Atmospheric pressure pulse discharge plasma generating device of suspension conductive electrode |
| CN114501761B (en) * | 2022-02-10 | 2023-01-24 | 大连理工大学 | Atmospheric pressure pulse discharge plasma generating device of suspension conductive electrode |
| CN114823289A (en) * | 2022-05-15 | 2022-07-29 | 安徽森米诺农业科技有限公司 | Efficient cleaning process for semiconductor wafer |
| CN114823289B (en) * | 2022-05-15 | 2022-11-22 | 上海申和投资有限公司 | Efficient cleaning process for semiconductor wafer |
| CN115164314A (en) * | 2022-07-11 | 2022-10-11 | 中电科奥义健康科技有限公司 | Hydrated free radical generating device for inhibiting generation of ozone |
| CN115164314B (en) * | 2022-07-11 | 2023-12-08 | 中电科奥义健康科技有限公司 | Hydrated free radical generating device for inhibiting ozone generation |
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Application publication date: 20130123 |