CN209766374U - Etching machine - Google Patents
Etching machine Download PDFInfo
- Publication number
- CN209766374U CN209766374U CN201920599799.9U CN201920599799U CN209766374U CN 209766374 U CN209766374 U CN 209766374U CN 201920599799 U CN201920599799 U CN 201920599799U CN 209766374 U CN209766374 U CN 209766374U
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- China
- Prior art keywords
- gas
- etching machine
- chamber
- showerhead
- wafer
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- 238000005530 etching Methods 0.000 title claims abstract description 56
- 239000007921 spray Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 abstract description 69
- 239000012495 reaction gas Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model provides an etching machine, include: the gas delivery system comprises a chamber, a first gas delivery device and a second gas delivery device, wherein the first gas delivery device comprises: a first gas line and a first showerhead; the second gas delivery device comprises: a second gas line and a plurality of second showerhead, the second gas line comprising: the first branch pipeline and the second branch pipeline, wherein the second branch pipeline is arranged around the inner side wall of the chamber, and each second spray head is arranged on the second branch pipeline. The first nozzle and the second nozzle can simultaneously spray reaction gas into the chamber, so that the flow of the reaction gas sprayed to the edge area and the central area of the wafer in the chamber tends to be consistent, the etching rate of the edge area of the wafer is improved, and the uniformity of wafer etching is effectively improved.
Description
Technical Field
The utility model relates to a semiconductor manufacturing equipment technical field, in particular to sculpture board.
Background
With the rapid development of science and technology, high-tech electronic products, such as mobile phones, tablet computers, digital cameras, etc., have been widely used in daily life. These electronic products include a plurality of semiconductor chips, and the material source of the semiconductor chips is a wafer. In order to meet the large demand of high-tech electronic products, the wafer manufacturing industry is continuously developing and improving how to make the manufacturing process of the wafer faster and more efficient.
In the existing wafer etching process, an etching machine comprises: the gas transmission device is arranged in the cavity, is positioned above a wafer placed in the cavity and is used for spraying reaction gas required for etching the wafer to the surface of the wafer. However, the existing etching machine has a defect that the reaction gas is more concentrated in the edge region of the wafer than in the central region, which results in non-uniform etching in the edge region of the wafer than in the central region, and therefore, it is necessary to develop an etching machine capable of improving the uniformity of wafer etching.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an sculpture board to solve the inhomogeneous problem of wafer surface sculpture.
In order to solve the technical problem, the utility model provides an etching machine, include: the device comprises a chamber, a first gas delivery device and a second gas delivery device;
The first gas delivery device comprises: the first gas pipeline is connected with the first spray head, and the first spray head is arranged in the cavity;
The second gas delivery device comprises: a second gas line and a plurality of second showerhead, the second gas line comprising: the first branch pipeline is communicated with the second branch pipeline, the second branch pipeline surrounds the inner side wall of the chamber, and the second spray heads are arranged on the second branch pipeline.
Optionally, in the etching machine, the second nozzles are located on the same horizontal plane.
Optionally, in the etching machine, the number of the second nozzles is greater than or equal to 3, and each of the second nozzles is uniformly disposed on the second branch pipeline.
Optionally, in the etching machine, the etching machine further includes: the first electrode is arranged on the inner wall of the cavity, and the second electrode is arranged in the cavity and has a gap with the inner wall of the cavity.
Optionally, in the etching machine, the height of the second electrode in the chamber is equal to or less than the height of the second branch pipeline in the chamber, and the second electrode can bear a wafer.
Optionally, in the etching machine, an opening is formed in the first nozzle, and the opening faces the center of the surface of the second electrode.
Optionally, in the etching machine, a plurality of air outlets are formed in each second nozzle, and the air outlets face the edge of the second electrode.
Optionally, in the etching machine, the number of the air outlets on the second nozzle close to the first branch pipeline is less than or equal to the number of the air outlets on the second nozzle far from the first branch pipeline.
Optionally, in the etching machine, the gas flow output by each second nozzle is the same as the gas flow output by the first nozzle.
Optionally, in the etching machine, the second branch pipeline is a circular gas pipeline, an elliptical gas pipeline or a multi-section arc gas pipeline.
Optionally, in the etching machine, the etching machine further includes: the gas supply device is arranged on the cavity side, and the first gas conveying device and the second gas conveying device are communicated with the gas supply device.
The utility model provides an sculpture board includes: the gas delivery system comprises a chamber, a first gas delivery device and a second gas delivery device, wherein the first gas delivery device comprises: a first gas line and a first showerhead; the second gas delivery device comprises: a second gas line and a plurality of second showerhead, the second gas line comprising: the first branch pipeline and the second branch pipeline, wherein the second branch pipeline is arranged around the inner side wall of the chamber, and each second spray head is arranged on the second branch pipeline. The first nozzle and the second nozzle can simultaneously spray reaction gas into the chamber, so that the flow of the reaction gas sprayed to the edge area and the central area of the wafer in the chamber tends to be consistent, the etching rate of the edge area of the wafer is improved, and the uniformity of wafer etching is effectively improved.
Drawings
Fig. 1 is a schematic view of an etching machine provided in an embodiment of the present invention;
Wherein, 100-chamber, 110-first gas delivery device, 111-first gas line, 112-first showerhead, 120-second gas delivery device, 121-first branch line, 122-second branch line, 123-second showerhead.
Detailed Description
The etching machine of the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
in the existing wafer etching process, after the reaction gas is sprayed out through the first nozzle, because the area of the wafer is large, and the phenomenon that the contact reaction gas is uneven can be generated in the edge area and the central area of the wafer, specifically, because the existing etching machine is only provided with the first nozzle which is positioned above the center of the wafer, the amount of the gas sprayed to the edge area of the wafer is less than that of the central area of the wafer, and further the etching rate and the etching precision of the edge area and the central area of the wafer are different, namely the uniformity of the wafer etching is poor.
The utility model provides an etching machine, refer to fig. 1, fig. 1 is the utility model discloses the etching machine schematic diagram that the embodiment provides, the etching machine includes: a chamber 100, a first gas delivery device 110, and a second gas delivery device 120.
further, the first gas delivery device 110 includes: a first gas line 111 and a first showerhead 112, the first gas line 111 being connected to the first showerhead 112, the first showerhead 112 being disposed in the chamber 100.
Further, the second gas delivery device 120 includes: a second gas line and a plurality of second showerhead 123, the second gas line comprising: a first branch pipe 121 and a second branch pipe 122, wherein the first branch pipe 121 is communicated with the second branch pipe 122, the second branch pipe 122 is disposed around the inner sidewall of the chamber 100, and each of the second nozzles 123 is disposed on the second branch pipe 122. In this embodiment, the second showerheads 123 are located on the same horizontal plane, the number of the second showerheads 123 is greater than or equal to 3, and the second showerheads 123 are uniformly (equidistantly) disposed on the second branch pipes 122, and the number of the second showerheads 123 may be set according to the size of the inner diameter of the chamber 100 and the size of the second branch pipes 122, as long as the entire edge of the wafer can contact the reaction gas output by the second showerheads 123. In this embodiment, the second branch pipeline 122 is a circular gas pipeline, an elliptical gas pipeline or a multi-section arc gas pipeline, and the number of the second nozzles 123 that can be set is increased by the circular, elliptical or arc second branch pipeline 122, so that the spraying range of the second nozzles 123 is expanded, and the working efficiency of the second gas conveying device 120 is improved.
Preferably, the etching machine further comprises: a first electrode disposed on an inner wall of the chamber 100, and a second electrode (not shown) disposed in the chamber 100 with a gap therebetween. The first electrode can be selected to be close to the second branch pipe 122, so that the time for contacting the reaction gas required by etching in the second branch pipe 122 can be shortened, and the rapid electrolysis of the reaction gas is facilitated; the second electrode comprises a power electrode, and is generally used for carrying a wafer to be etched. The wall of the whole process chamber is grounded and serves as an anode, so that the first electrode connected with the process chamber in the embodiment is equivalent to the anode, the second electrode bearing the wafer serves as a cathode, and an electric field is generated between the first electrode and the second electrode in the process chamber. Under the action of a strong electric field, stray electrons accelerated by a high-frequency electric field randomly collide with reaction gas molecules or atoms, when the energy of the electrons is large to a certain degree, the random collision is changed into inelastic collision, secondary electron emission is generated, the electrons collide with the gas molecules again, and the reaction gas molecules are continuously excited or ionized. Further, the height of the second electrode in the chamber 100 is equal to or less than the height of the second branch pipe 122 in the chamber 100.
Further, an opening (not shown) is formed on the first showerhead 112, and the opening is aligned with the center of the second electrode surface, that is, the opening of the first showerhead 112 faces the center of the wafer placed on the second electrode. In the present embodiment, the opening of the first showerhead 112 is directed toward the center of the wafer upper surface as much as possible, so that the injected reaction gas can be uniformly diffused from the center of the wafer to the entire wafer surface as quickly as possible.
Further, a plurality of gas outlets (not shown) are disposed on each second showerhead 123, and the gas outlets face the edge of the second electrode, that is, the gas outlets of each second showerhead 123 face the edge of the wafer placed on the second electrode from various angles, so that all edges of a wafer can contact the reaction gas ejected from the second showerhead 123, and the reaction gas can be ejected into the chamber 100 through the first showerhead 112 and the second showerhead 123 at the same time, so that the flow rates of the reaction gas ejected into the edge region and the center region of the wafer in the chamber 100 tend to be consistent, thereby increasing the etching rate of the edge region of the wafer and effectively improving the uniformity of wafer etching.
In this embodiment, the second showerhead 123 may be selectively disposed on the inner wall of the chamber 100 or suspended in the chamber 100 with a certain interval from the inner wall of the chamber 100 and the second electrode. Specifically, the number of the gas outlet holes on the second showerhead 123 close to the first branch line 121 is less than or equal to the number of the gas outlet holes on the second showerhead 123 far from the first branch line 121 to ensure that the reaction gas flow output by each second showerhead 123 is the same, in this embodiment, the gas flow output by each second showerhead 123 and the gas flow output by the first showerhead 112 also need to be the same.
Further, the etching machine further comprises: and a gas supply device disposed at a side of the chamber 100 for supplying a reaction gas required for etching a wafer into the chamber 100 of a process chamber, wherein the first gas delivery device 110 and the second gas delivery device 120 are both communicated with the gas supply device.
the utility model provides an sculpture board includes: the gas delivery system comprises a chamber, a first gas delivery device and a second gas delivery device, wherein the first gas delivery device comprises: a first gas line and a first showerhead; the second gas delivery device comprises: a second gas line and a plurality of second showerhead, the second gas line comprising: the first branch pipeline and the second branch pipeline, wherein the second branch pipeline is arranged around the inner side wall of the chamber, and each second spray head is arranged on the second branch pipeline. The first nozzle and the second nozzle can simultaneously spray reaction gas into the chamber, so that the flow of the reaction gas sprayed to the edge area and the central area of the wafer in the chamber tends to be consistent, the etching rate of the edge area of the wafer is improved, and the uniformity of wafer etching is effectively improved.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (11)
1. An etching machine is characterized by comprising: the device comprises a chamber, a first gas delivery device and a second gas delivery device;
The first gas delivery device comprises: the first gas pipeline is connected with the first spray head, and the first spray head is arranged in the cavity;
The second gas delivery device comprises: a second gas line and a plurality of second showerhead, the second gas line comprising: the first branch pipeline is communicated with the second branch pipeline, the second branch pipeline surrounds the inner side wall of the chamber, and the second spray heads are arranged on the second branch pipeline.
2. the etching machine table according to claim 1, wherein the second nozzles are located on the same horizontal plane.
3. The etching machine table as claimed in claim 2, wherein the number of the second nozzles is greater than or equal to 3, and each of the second nozzles is uniformly disposed on the second branch pipe.
4. The etching machine table according to claim 1, further comprising: the first electrode is arranged on the inner wall of the cavity, and the second electrode is arranged in the cavity and has a gap with the inner wall of the cavity.
5. The etching machine table according to claim 4, wherein the height of the second electrode in the chamber is equal to or less than the height of the second branch pipeline in the chamber, and the second electrode can carry a wafer.
6. The etching machine table according to any one of claim 4, wherein the first nozzle has an opening facing the center of the surface of the second electrode.
7. The etching machine table according to claim 4, wherein a plurality of air outlets are formed in each second nozzle, and the air outlets face the edge of the second electrode.
8. The etching machine table as claimed in claim 7, wherein the number of the air outlets of the second showerhead close to the first branch line is less than or equal to the number of the air outlets of the second showerhead far from the first branch line.
9. The etching machine table of claim 8, wherein the gas flow output by each second showerhead is the same as the gas flow output by the first showerhead.
10. The etching machine table according to claim 1, wherein the second branch pipeline is a circular gas pipeline, an elliptical gas pipeline or a multi-segment arc gas pipeline.
11. the etching machine table according to claim 1, further comprising: the gas supply device is arranged on the cavity side, and the first gas conveying device and the second gas conveying device are communicated with the gas supply device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920599799.9U CN209766374U (en) | 2019-04-28 | 2019-04-28 | Etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920599799.9U CN209766374U (en) | 2019-04-28 | 2019-04-28 | Etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209766374U true CN209766374U (en) | 2019-12-10 |
Family
ID=68760897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920599799.9U Expired - Fee Related CN209766374U (en) | 2019-04-28 | 2019-04-28 | Etching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209766374U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490105A (en) * | 2020-11-23 | 2021-03-12 | 长江存储科技有限责任公司 | Plasma processing device and processing method |
-
2019
- 2019-04-28 CN CN201920599799.9U patent/CN209766374U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490105A (en) * | 2020-11-23 | 2021-03-12 | 长江存储科技有限责任公司 | Plasma processing device and processing method |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191210 |