KR101947844B1 - Semiconductor processing system having multiple decoupled plasma sources - Google Patents

Abstract

The semiconductor substrate processing system includes a substrate support defined to support the substrate in an exposed portion to the processing region. The system also includes a first plasma chamber defined to generate a first plasma and to supply reactive components of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive components of the second plasma to the processing region. The first and second plasma chambers are defined to be controlled independently.

Description

≪ Desc / Clms Page number 1 > SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES WITH DECOUPLED PLASMA SOURCES [

Plasma sources used for thin film processing in semiconductor device fabrication often fail to achieve the most desirable conditions for dry etching due to the inability to separately control ion and radical concentrations in the plasma. For example, in some applications, desirable conditions for plasma etching will be achieved by increasing the ion concentration in the plasma while simultaneously keeping the radical concentration at a constant level. However, independent control of this type of radical concentration vs. ion concentration can not be achieved using a common plasma source commonly used for thin film processing. Within this context, the present invention has emerged.

In one embodiment, a semiconductor substrate processing system is described. The system includes a substrate support defined to support a substrate within an exposure to the processing region. The system also includes a first plasma chamber defined to generate a first plasma and to supply reactive components of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive components of the second plasma to the processing region. The first and second plasma chambers are defined to be controlled independently.

In another embodiment, a semiconductor substrate processing system is described. The system includes a top structure, a bottom structure, and side walls extending between the top structure and the bottom structure. The chamber surrounds the processing region. A substrate support is disposed within the chamber and is defined to support the substrate at the exposed portion to the processing region. The system also includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly has a bottom surface exposed to the processing region and opposite the top surface of the substrate support. The top plate assembly includes a first plurality of plasma ports connected to supply reactive components of the first plasma to the processing region. The top plate assembly also includes a second plurality of plasma ports connected to supply reactive components of the second plasma to the processing region.

In yet another embodiment, a method for processing a semiconductor substrate is described. The method includes an act of disposing a substrate on a substrate support within an exposure portion for a processing region. The method also includes an operation for generating a first plasma of a first plasma type. The method also includes an operation for generating a second plasma of a second plasma type that is different from the first plasma type. The method further includes supplying reactive components of both the first and second plasma to the processing region to effect processing of the substrate.

In one embodiment, a semiconductor substrate processing system is described. The system includes a plate assembly having a process-side surface exposed to a plasma processing region. The exit channel is formed through the process-side surface of the plate assembly to provide for the removal of exhaust gases from the plasma processing region. The plasma microchamber is formed within the discharge channel. The gas supply channel is also formed through the plate assembly to flow the process gas from the discharge channel to the plasma microchamber. The power transfer component is then formed in the plate assembly to transmit power to the plasma microchamber to convert the process gas from the discharge chamber into a plasma within the plasma microchamber.

In another embodiment, a semiconductor substrate processing system is described. The system includes a top structure, a bottom structure, and a chamber having sidewalls extending between the top structure and the bottom structure. The chamber includes a processing region. The substrate support is disposed within the chamber. The substrate support has a top surface defined to support the substrate at the exposed portion for the processing region. The system also includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly has a bottom surface exposed to the processing region and opposite the top surface of the substrate support. The top plate assembly includes a first set of plasma microchambers each formed with a bottom surface of the top plate assembly. The top plate assembly also includes a first network of gas supply channels configured to flow a first process gas into each of the first set of plasma microchambers. Each of the first set of plasma microchambers is defined to convert the first process gas from the exposed portion to the first plasma to the processing region. The top plate assembly also includes a set of exhaust channels formed through the bottom surface of the top plate assembly to provide for removal of exhaust gases from the processing region. The top plate assembly also includes a second set of plasma microchambers, each formed within a set of discharge channels. The top plate assembly further includes a second network of gas supply channels configured to flow a second process gas into each of the second set of plasma microchambers. Each of the second set of plasma microchambers is defined to convert a second process gas from the exposed portion to the processing region to a second plasma.

In another embodiment, a method for processing a semiconductor substrate is described. The method includes an act of disposing a substrate on a substrate support within an exposure portion for a processing region. The method also includes operating a first set of plasma microchambers at an exposure to the processing region, whereby each of the first set of plasma microchambers generates a first plasma, Reactive components are supplied to the processing region. The first set of plasma microchambers are positioned above the processing region opposite from the substrate support. The method also includes operating a second set of plasma microchambers in an exposed portion of the processing region, whereby each of the second set of plasma microchambers generates a second plasma, The reactive components are supplied to the plasma region. The second plasma differs from the first plasma. The second set of plasma microchambers are then positioned above the processing region opposite from the substrate support. The second set of plasma microchambers are interspersed in a substantially uniform manner between the first set of plasma microchambers.

Other aspects and advantages of the present invention will become more apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the present invention.

Figure 1 illustrates relationships between ion concentrations and radical concentrations achievable using the use of multiple plasma chambers at the exposed portion for a common substrate processing region, in accordance with an embodiment of the present invention.
Figure 2a illustrates a semiconductor substrate processing system, in accordance with an embodiment of the invention.
Figure 2B illustrates a semiconductor substrate processing system, in accordance with one embodiment of the present invention.
2C illustrates a semiconductor substrate processing system, in accordance with an embodiment of the present invention.
Figure 2D illustrates a variation of a second plasma chamber having an energized outlet region for enhancing ion extraction, in accordance with an embodiment of the present invention.
Figure 2e illustrates a variation of a system in which first and second plasma chambers are separated by a dielectric material, in accordance with an embodiment of the present invention.
Figure 2fa illustrates another variation of the system of Figure 2a in which the power transfer components of the first and second plasma chambers are embodied as electrodes disposed on the sidewalls in the first and second plasma chambers, in accordance with an embodiment of the present invention. Lt; / RTI >
Figure 2fb illustrates a system of Figure 2a in which power transfer components of first and second plasma chambers are implemented as electrodes disposed on top and bottom surfaces in first and second plasma chambers, in accordance with an embodiment of the present invention. ≪ / RTI >
FIG. 2G illustrates another variation of the system of FIG. 2A, in which the power transfer components of the first and second plasma chambers are implemented as coils disposed proximate to the first and second plasma chambers, according to an embodiment of the present invention. Respectively.
Figure 3a shows a vertical section of a semiconductor substrate processing system, in accordance with an embodiment of the invention.
Figure 3B shows a horizontal section AA as referenced in Figure 3A, in accordance with an embodiment of the present invention.
3C illustrates a variation of the horizontal cross-sectional view of FIG. 3B where the spacing between the first and second plasma microchambers across the top plate assembly is reduced, in accordance with an embodiment of the present invention.
FIG. 3D illustrates a variation of the horizontal cross-sectional view of FIG. 3B with increasing spacing between the first and second plasma microchambers over the top plate assembly, in accordance with an embodiment of the present invention.
FIG. 3E illustrates a variation of the horizontal cross-sectional view of FIG. 3B where the spacing between the first and second plasma microchambers over the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
4A illustrates another system for substrate plasma processing, in accordance with an embodiment of the present invention.
Figure 4B shows a horizontal cross-sectional view BB as referenced in Figure 4A, in accordance with an embodiment of the present invention.
4C illustrates a variation of the horizontal cross-sectional view of FIG. 4B in which the spacing between plasma ports associated with the first and second plasma chambers across the top plate assembly is reduced, in accordance with an embodiment of the present invention.
4D illustrates a variation of the horizontal cross-sectional view of FIG. 4B where the spacing between the plasma ports associated with the first and second plasma chambers over the top plate assembly is increased, in accordance with an embodiment of the present invention.
4E illustrates a variation of the horizontal cross-sectional view of FIG. 4B where the spacing between the plasma ports associated with the first and second plasma chambers over the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
5A illustrates another system for substrate plasma processing, in accordance with one embodiment of the present invention.
Figure 5B illustrates a horizontal cross-sectional view CC as referenced in Figure 5A, in accordance with an embodiment of the present invention.
FIG. 5C illustrates a variation of the horizontal cross-sectional view of FIG. 5B in which the spacing between the plasma microchambers of the first and second sets across the lower surface of the top plate assembly is reduced, in accordance with an embodiment of the present invention.
5D illustrates a variation of the horizontal cross-sectional view of FIG. 5B where the spacing between the first and second sets of plasma microchambers over the lower surface of the top plate assembly is increased, in accordance with an embodiment of the present invention.
FIG. 5E illustrates a variation of the horizontal cross-sectional view of FIG. 5B where the spacing between the plasma microchambers of the first and second sets over the lower surface of the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
Figure 6 shows a flow diagram of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention.
Figure 7 shows a flow diagram of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well-known process operations are not described in detail in order not to unnecessarily obscure the present invention.

Various embodiments of the present invention are directed to a method and system for providing independent, controllable control parameters to achieve decoupled control of ion and radical concentrations in a plasma processing region where two or more types of plasma generating devices are fluidly connected. Such as plasma chambers, that are capable of operating with a plasma processing chamber, wherein the substrate to be processed is disposed within a plasma processing region. For example, in one embodiment, the first plasma chamber may be operated to produce a first plasma having a higher concentration of ions than the ion concentration. Further, in this exemplary embodiment, the second plasma chamber may be operated to produce a second plasma having an ion concentration higher than theradial concentration. The first and second plasma chambers are fluidly connected to the same substrate processing region so that the first plasma chamber is operated to control the amount of radical components in the substrate processing region and the second plasma chamber is operated to control the amount of ion components Is operated to control the amount. In this manner, the first plasma chamber is controlled to tune the ion concentration in the substrate processing region, and the second plasma chamber is controlled to tune the radical concentration in the substrate processing region.

In one embodiment, as used herein, the term "substrate " refers to a semiconductor wafer. However, in other embodiments, the term "substrate" as used herein can refer to substrates formed from sapphire, GaN, GaAs or SiC, or other substrate materials, and can include glass panels / Foils, metal sheets, polymeric materials, and the like. Further, in various embodiments, the term "substrate" as referred to herein may vary in shape, shape, and / or size. For example, in some embodiments, a "substrate" as referred to herein may correspond to a 200 mm (millimeter) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. Also, in some embodiments, a "substrate" as referred to herein may correspond to a non-circular substrate such as a rectangular substrate for a flat panel display or the like, among other shapes. A "substrate" referred to herein is shown in the figures of various exemplary embodiments as a substrate 105.

The independent operation of the plurality of plasma chambers to provide reactive components to the common substrate processing region provides a substantially decoupled adjustment of the ion concentration with respect to the radical concentration in the common substrate processing region. In various embodiments, the generation of different types of plasmas in a plurality of plasma chambers is achieved through independent control of the power supplies and / or gas supplies associated with the plurality of plasma chambers. Further, in some embodiments, the outputs of the plurality of plasma chambers may be arranged in a spatial array in fluid communication with the substrate processing region. A plurality of plasma chambers, such that different reactive components of different types of plasma formed in the plurality of plasma chambers are supplied to the substrate processing region in a substantially uniform manner to affect substantially uniform processing of the substrate within the substrate processing region, The outputs of which can be scattered from one another and spaced sufficiently close to one another.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates the relationship between the ion concentration and the radial concentration achievable with the use of multiple plasma chambers in the exposed portion for a common substrate processing region, in accordance with an embodiment of the present invention. The first line 301 shows a variation in ion concentration versus radical concentration in the first plasma generated in the first plasma chamber fluidly connected to the common substrate processing region. In this example, the first plasma has a higher concentration of ions than the ion concentration. The second line 303 shows a variation in ion concentration versus radical concentration in a second plasma generated in a second plasma chamber fluidly connected to a common substrate processing region. In this example, the second plasma has an ion concentration higher than the radical concentration. Thus, the first plasma is generated to primarily supply the radical components to the substrate processing region, and the second plasma is generated to primarily supply the ion components to the substrate processing region.

Through the independent control of the first and second plasma chambers, essentially any ion concentration versus radical concentration in the domain extending between the first line 301 and the second line 303 is achieved within the substrate processing region It is possible. For example, the second plasma chamber may be operated solely to provide a first ion-to-radical concentration ratio 305 within the substrate processing region. When used in conjunction, the first plasma chamber may be operated to increase the radical concentration in the substrate processing region, while the second plasma chamber may be operated to maintain a substantially steady ion concentration in the substrate processing region Thereby creating a second ion-to-radical concentration ratio 307 in the substrate processing region that is not achievable by the first or second plasma chamber alone. Similarly, if used together, the second plasma chamber may be operated to reduce the ion concentration in the substrate processing region, but the first plasma chamber may be operated to maintain a substantially steady state radical concentration in the substrate processing region Thereby creating a third ion-to-radical concentration ratio 309 in the substrate processing region that is not achievable by the first or second plasma chamber alone.

1, the plasma chamber may be operated solely to provide a fourth ion-to-radical concentration ratio 311 within the substrate processing region. When used in conjunction, the second plasma chamber may be operated to increase the ion concentration in the substrate processing region, but the first plasma chamber is operated to maintain a substantially steady stateradical concentration in the substrate processing region, To produce a fifth ion-to-radical concentration ratio 313 in the substrate processing region that is not achievable by the first or second plasma chamber alone. Similarly, if used together, the first plasma chamber may be operated to reduce the radical concentration in the substrate processing region, while the second plasma chamber may be operated to maintain a substantially steady state ion concentration in the substrate processing region Thereby creating a sixth ion-to-radical concentration ratio 315 in the substrate processing region that is not achievable by the first or second plasma chamber alone.

Based on the foregoing, in one embodiment of the present invention, a plurality of independently controlled plasma chambers provide ion-to-radical concentration ratios in a substrate processing region that are not achievable through the operation of a single plasma chamber alone It should be understood that it is used to supply reactive components to a common substrate processing region. 1, the generation of a plurality of plasma with significantly different ion-to-radical concentration ratios, when the reactive components of a plurality of plasmas are combined, is determined by the ion-to-radical concentration ratio To provide a wider range of < / RTI > A plurality of semiconductor substrate processing systems that provide spatial coupling of reactive component outputs from a plurality of independently controlled plasma chambers to produce a combination of reactive components within a substrate processing region that is not achievable by a single plasma chamber alone .

2A shows a semiconductor substrate processing system 200A, in accordance with an embodiment of the invention. The system 200A includes a substrate support 107 that is defined to support a substrate 105 at an exposure to the processing region 106. The system 200A also generates a first plasma 101A and supplies reactive components 108A of the first plasma 101A to the processing region 106 through an opening in the first plasma chamber 101 And a first plasma chamber 101 defined therein. The system 200A also generates a second plasma 102A and supplies reactive components 108B of the second plasma 102A to the processing region 106 through an opening in the second plasma chamber 102 And a second plasma chamber 102 defined therein. The first plasma chamber 101 and the second plasma chamber 102 are defined to be controlled independently.

More specifically, the first plasma chamber 101 is electrically connected to the first power supply 103A. The first power supply 103A is defined to supply the first power to the first plasma chamber 101. [ The first plasma chamber 101 is also fluidly connected to a first process gas supply 104A defined to supply a first process gas to the first plasma chamber 101. [ The first plasma chamber 101 is defined to apply a first power to the first process gas to produce a first plasma 101A within the first plasma chamber 101. [

And the second plasma chamber 102 is electrically connected to the second power supply 103B. And the second power supply 103B is defined to supply a second power to the second plasma chamber 102. [ The second plasma chamber 102 is also fluidly connected to a second process gas supply 104B that is defined to supply a second process gas to the second plasma chamber 102. [ The second plasma chamber 102 is defined to apply a second power to the second process gas to produce a second plasma 102A within the second plasma chamber 102. [

It should be appreciated that depending on the applied power and the process gas used, the first and second plasma chambers 101/102 may generate significantly different types of plasma 101A / 102A. In one embodiment, the first and second power supplies 103A / 103B are independently controllable. Further, in one embodiment, the first and second process gas supply units 104A / 104B are independently controllable. And, in another embodiment, the first and second power supply units 103A / 103B and the first and second process gas supply units 104A / 104B are independently controllable.

Independent control of the first and second process gas supplies 104A / 104B is essentially one of any other process gas related parameters, one or more of gas type / mixture, gas flow rate, gas temperature, and gas pressure It should be understood. Independent control of the first and second power supplies 103A / 103B may also be performed on at least one of the radio frequency (RF) amplitude, the RF frequency, the voltage level, and the current level, It should be understood.

In one embodiment, the first power supplied to the first plasma chamber 101 by the first power supply 103A is either DC (DC) power, RF power, or a combination of DC and RF power. Similarly, in one embodiment, the second power supplied by the second power supply 103B to the second plasma chamber 102 is either DC power, RF power, or a combination of DC and RF power. In one embodiment, the first power supplied to the first plasma chamber 101 by the first power supply 103A is at least one of 2 MHz, 27 MHz, 60 MHz, 400 kilohertz (kHz) And the second power supplied to the second plasma chamber 102 by the second power supply unit 103B is a RF power having a frequency of 2 MHz, 27 MHz, 60 MHz, 400 kHz, or a combination thereof Respectively. In one version of this embodiment, the frequencies of the first and second powers are different. However, in another version of this embodiment, the frequencies of the first and second powers are such that the process gases supplied to the first and second plasma chambers 101/102 are applied to the first and second plasma 101A / 102A ), It can be the same.

The type of power applied to the first and second plasma chambers 101/102 depends in part on the type of plasma chamber used. In some exemplary embodiments, each of the first and second plasma chambers 101/102 may be a hollow cathode chamber, an electron cyclotron resonance chamber, or a microwave drive chamber, or an inductive coupled chamber, Lt; / RTI > Further, in one embodiment, the first and second plasma chambers 101/102 are plasma chambers of the same type. However, in other embodiments, the first and second plasma chambers 101/102 are different types of plasma chambers.

It should also be appreciated that, in different embodiments, the first and second plasma chambers 101/102 may include different types of power delivery components. The power transfer components are responsible for carrying power to the process gas within the first / second plasma chambers 101/102. For example, in one embodiment, the walls of the first / second plasma chamber 101/102 are electrically conductive and provide the function of power delivery components. In this embodiment, the first and second plasma chambers 101/102 are configured such that the power delivered to one plasma chamber 101/102 is adversely affected by the neighboring plasma chamber 101/102, They can be separated from each other by a dielectric material and a conductive shield. 2E illustrates a variation of system 200A in which first and second plasma chambers 101/102 are separated by a conductive shield 151 disposed between dielectric materials 150, according to one embodiment of the present invention. Lt; / RTI > In one embodiment, the conductive shield 151 is electrically connected to the reference ground potential.

2f and 2fb illustrate the system 200A of FIG. 2a, in which the power delivery components of the first and second plasma chambers 101/102 are implemented as electrodes 160 disposed within the first and second plasma chambers ). ≪ / RTI > 2f shows an exemplary embodiment in which the electrodes 160 are disposed on the sidewalls of the first and second plasma chambers 101/102. 2fb shows an exemplary embodiment in which the electrodes 160 are disposed on the upper and lower surfaces within the interior of the first and second plasma chambers 101/102. In this embodiment, the electrode 160 on the upper surface within the interior of the plasma chambers 101/102 is connected to the first and second process gases 101, 102 having an internal volume of the first and second plasma chambers 101/102, And one or more holes defined therethrough to enable fluid communication of the supply portions 104A / 104B. Further, in this embodiment, the electrode 160 on the lower surface in the interior of the first and second plasma chambers 101/102 is positioned at the center of each of the reactive components of the first and second plasma 101A / 102A And one or more holes defined therethrough to enable transmission. It should be understood that the arrangements of the electrodes 160 of Figures 2fa and 2fb are shown by way of example. In other embodiments, the electrodes 160 may be disposed on any one of the surfaces within the plasma generation volume of the first / second plasma chamber 101/102.

FIG. 2G is a schematic diagram of a plasma processing system in which power transfer components of first and second plasma chambers 101/102, according to an embodiment of the present invention, are arranged in close proximity to first and second plasma chambers 101/102, Lt; RTI ID = 0.0 > 200A < / RTI > It should be appreciated that the top arrangement of the coils 170 of Figure 2g is shown by way of example. In other embodiments, the coils 170 may be disposed close to any one or more outer surfaces of the first / second plasma chamber 101/102. It should be appreciated that the different power delivery component embodiments of Figures 2a, 2e, 2f, and 2g are shown by way of example. In other embodiments, the first and second plasma chambers 101/102 may implement power transfer components different from those illustrated in Figures 2a, 2e, 2f, and 2g.

Given the foregoing, in order to achieve a condition in which one plasma provides a higher concentration of ions than the radicals and the other plasma provides a higher concentration of radicals than the ions, the first and second It should be appreciated that the plasma chambers 101/102 may be operated using different process gases and / or different powers. The first and second plasma chambers 101/102 may also be arranged in a substantially uniform manner within the processing region 106 over the substrate support 107 Is defined to dispense reactive components 108A / 108B, respectively.

In one embodiment, the first and second plasma chambers 101/102 are defined to operate at internal pressures up to about one Torr (T). Further, in one embodiment, the processing region 106 is operated within a pressure range extending from about 1 millitorr (mT) to about 100 mT. The outlets of the first and second plasma chambers 101/102 are defined to provide and control the pressure drop between the interior of the first and second plasma chambers 101/102 and the processing region 106 do. Also, if desired, in one embodiment, the radical components may be applied to the first and second plasma chambers 101/102 in a cross-flow arrangement to manage the etch generation distribution across the substrate < RTI ID = 102 or may use cross-flow within the processing region 106. [

In one exemplary embodiment, system 200A includes a process gas throughput flow rate of about 1000 scc / sec (standard square centimeters per second), and reactive components 108A / 102B in processing region 106 of about 10 milliseconds (ms) 108B) < / RTI > time to provide a processing region 106 at a pressure of about 10 mT. It should be understood and appreciated that the exemplary operating conditions represent one of an essentially unlimited number of operating conditions that can be achieved using the system 200A. The exemplary operating conditions do not imply or imply any limitation as to the possible operating conditions of the system 200A.

The substrate support 107 is defined to be movable in a direction 110 substantially perpendicular to the top surface of the substrate support 107 on which the substrate 105 is to be supported, 113). The process gap distance 113 extends vertically between the upper surface of the substrate support 107 and the first and second plasma chambers 101/102. In one embodiment, the substrate support 107 is movable in a direction 110 such that the process gap distance is adjustable within a range extending from about 2 cm to about 10 cm. In one embodiment, the substrate support 107 is adjusted to provide a process gap distance 113 of about 5 cm. In an alternative embodiment, adjustment of the process gap distance 113 may be accomplished through movement of the first and second plasma chambers 101/102 in the direction 110 relative to the substrate support 107 .

The adjustment of the process gap distance 113 provides adjustment of the dynamic range of the ion flux that emanates from either or both of the first and second plasma chambers 101/102. Specifically, the ion flux reaching the substrate 105 can be reduced by increasing the process gap distance 113, or vice versa. In one embodiment, when the process gap distance 113 is adjusted to achieve an adjustment in the ion flux at the substrate 105, the process gas flow rate through the higher radical-fed plasma chamber 101 / May be provided to provide independent control of the radial flux in the plasma reactor 105. Additionally, in combination with the ions and radical fluxes emanating from the first and second plasma chambers, the process gap distance 113 can be adjusted to provide a substantially uniform ion density and radical density at the substrate 105 It should be recognized that it is controlled.

In one embodiment, the substrate support 107 includes a bias electrode 107 for generating an electric field for attracting ions toward the substrate support 107 and thereby toward the substrate 105 held on the substrate support 107. In one embodiment, (112). Further, in one embodiment, the substrate support 107 includes a plurality of cooling channels 116 through which cooling fluid may flow during plasma processing operations to maintain temperature control of the substrate 105. Further, in one embodiment, the substrate support 107 may include a plurality of lifting pins that are defined to lift and lower the substrate 105 relative to the substrate support 107. In one embodiment, the substrate support 107 is defined as an electrostatic chuck mounted to generate a static charge for firmly holding the substrate 105 on the substrate support 107 during plasma processing operations.

In various embodiments, the first and second plasma chambers 101/102 are defined to operate in either a simultaneous or pulsed manner. The operation of the first and second plasma chambers 101/102 in the pulsed manner includes either the first plasma chamber 101 or the second plasma chamber 102 operating at a given time and in an alternating sequence . In detail, the first plasma chamber 101 will operate during a first time period when the second plasma chamber 102 is idle, and thereafter the second plasma chamber 102 is in a state in which the first plasma chamber 101 is idle , And the first and second plasma chambers 101/102 operate in this alternating manner for a predefined total time period.

The operation of the first and second plasma chambers 101/102 in the pulsed manner prevents / prevents undesirable communication between the first and second plasmas 101A / 102A with respect to process gas and / Lt; / RTI > The prevention of undesirable communication between the first and second plasma chambers 101/102 ensures that the process gases / species of the first plasma 101A do not enter the second plasma chamber 102 , And ensuring that the process gases / species of the second plasma 102A do not enter the first plasma chamber 101. Prevention of undesirable communication between the first and second plasma chambers 101/102 also prevents the power supplied to the first plasma chamber 101 from flowing into the second plasma 102A in the second plasma chamber , And ensuring that the power supplied to the second plasma chamber 102 does not flow to the first plasma 101A in the first plasma chamber 101. [

In embodiments in which the first and second plasma chambers 101/102 are operated in a simultaneous manner, the first and second plasma chambers 101/102 are configured to prevent / limit undesirable communication between them Is guaranteed. For example, each of the openings of the first and second plasma chambers 101/102 in the exposed portion to the processing region 106 may be formed in the first and second plasma chambers < RTI ID = 0.0 > Small enough to avoid cross-communication between the base stations 101/102 and spaced sufficiently far apart. Based on the foregoing, the first and second plasma chambers 101/102 may be programmed with respect to at least one of the process gas flow rate, the process gas pressure, the power frequency, the power amplitude, the on / off duration, It should be appreciated that they can be independently controlled during the plasma process.

Figure 2B illustrates a semiconductor substrate processing system 200B, in accordance with an embodiment of the present invention. System 200B is a variation of system 200A of FIG. 2A. In detail, the system 200B includes a baffle (not shown) disposed between the first and second plasma chambers 101/102 to extend from the first and second plasma chambers 101/102 toward the substrate support 107 baffle < / RTI > The baffle structure 109 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Further, in one embodiment, the baffle structure 109 is formed from dielectric materials to reduce power communication between the first and second plasma chambers 101/102. The baffle structure 109 is defined to be movable in a direction 114 that is substantially perpendicular to the top surface of the substrate support 107 on which the substrate 105 is to be supported.

Figure 2C illustrates a semiconductor substrate processing system 200C, in accordance with an embodiment of the invention. System 200C is a variation of system 200B of FIG. 2B. In detail, the system 200C includes first and second plasma chambers 101 (not shown) extending away from the processing region 106 in a direction substantially perpendicular to the upper surface of the substrate support 107, / RTI > and / or < / RTI > In one embodiment, the drain channel 111 is open and clear to provide for the evacuation of gases from the processing region 106. However, in other embodiments, the baffle structure 109 may be configured to extend from the first and second plasma chambers 101/102 toward the substrate support 107, in the first and second plasma chambers 101 / 102, respectively. The baffle structure 109 disposed within the discharge channel 111 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Also, in one embodiment, the baffle structure 109 disposed within the discharge channel 111 is formed from a dielectric material to reduce power communication between the first and second plasma channels 101/102. The baffle structure 109 is also sized smaller than the discharge channel 111 to provide a discharge flow 116 through the discharge channel 111 around the baffle structure 109.

2B and 2C, the baffle structure 109 may be used to limit fluid and / or power communication between adjacent plasma channels (e.g., 101, 102). Additionally, the baffle structure 109 may be used to help achieve uniformity of ions and radicals across the substrate 105. 2B and 2C, the baffle structure 109 is movable in a direction 114 substantially perpendicular to the substrate support 107. As shown in FIG. This movement of the baffle structure 109 in the direction 114 enables adjustment of the distance 115 as measured vertically between the baffle structure 109 and the substrate 105.

In various embodiments, the distance 115 between the baffle structure and the substrate 105 may be up to 5 cm. However, the distance 115 is a function of process gas flow rates and other parameters such as ion and radical fluxes, which are emitted from the first and second plasma chambers 101/102. In one exemplary embodiment, the distance 115 between the baffle structure and the substrate 105 is about 2 cm. Additionally, although the baffle structure 109 as shown in the exemplary embodiments of Figures 2B and 2D is rectangular in cross-section, the baffle structure 109 is of a cross-flow and turbulence type, among others. Such as, for example, a rounded bottom, an angled bottom, a tapered top (not shown) to achieve certain effects within the processing region 106, such as controlling process gas flow conditions, ≪ / RTI > and the like.

In some situations, radical generation in a plasma is not avoidable when attempting to generate ions predominantly in the plasma. In these situations, if the primary objective is to achieve ionic component transfer from the plasma, the transfer of radical components from the resulting plasma is also somewhat unavoidable. Extraction of ions from the plasma is also advantageous because the ion source, i.e., the opening between the plasma and the processing region, e.g., the processing region 106, is large enough so that the sheath does not inhibit plasma extraction, Are so low that they do not neutralize the ions. In one embodiment of the present invention, the ion source region may be defined at the opening between the ion source and the processing region. This ion source region may be implemented as an energized outlet region to provide supplemental electron production to enhance ion extraction from the ion source. For example, in one embodiment, the outlet region of the plasma chamber present in the exposed portion for the processing region may be a hollow portion of the plasma chamber to enhance ion production within the outlet region itself, Can be defined as a cathode.

Figure 2D illustrates a variation of a second plasma chamber 102A having an energized outlet region 225 to improve ion extraction, in accordance with an embodiment of the present invention. However, one or both of the first and second plasma chambers 101/102 may be defined to have a defined energizable plasma outlet region 225 to provide supplemental electron production to increase ion extraction. It should be understood. In one embodiment, the energizable plasma outlet region 225 is defined as a hollow cathode. In one version of this embodiment, the outlet region 225 is surrounded by an electrode 220 that can be powered by DC power, RF power, or a combination thereof. When reactive components from the plasma 102A flow through the energizable plasma outlet region 225, the power emanating from the electrode 220 will liberate the fast electrons within the outlet region 225, which in turn , Resulting in additional ionization in the process gases through the outlet region 225 thereby improving ion extraction from the plasma chamber 102. [ Additionally, the bias applied across the processing region 106 by the bias electrode 112 causes ions from the plasma 102A in the chamber 102 and the outlet region 225 toward the substrate 105 to be drawn draw.

FIG. 3A shows a vertical cross-sectional view of a semiconductor substrate processing system 400, in accordance with an embodiment of the invention. The system 400 includes a top structure 401B, a bottom structure 401C and a chamber 401 formed by sidewalls 401A extending between the top structure 401B and the bottom structure 401C. The chamber 401 surrounds the processing region 106. In various embodiments, the chamber sidewalls 401A, top structure 401B, and bottom structure 401C can be configured such that the chamber 401 materials are structurally resistant to pressure differences and temperatures to which they are exposed during plasma processing , As long as it is chemically compatible with the plasma processing environment, e.g., from stainless steel or aluminum.

The system 400 also includes a substrate support 107 that is disposed within the chamber 401 and is defined to support the substrate 105 at an exposed portion to the processing region 106. The substrate support 107 is defined to hold the substrate 105 on top during the performance of a plasma processing operation on the substrate 105. In the exemplary embodiment of FIG. 3A, the substrate support 107 is held by a cantilevered arm 405 attached to the wall 401A of the chamber 401. In some embodiments, however, the substrate support 107 may be attached to the bottom plate 401C of the chamber 401 or other member disposed within the chamber 401. [ In various embodiments, the substrate support 107 may be configured such that the substrate support 107 can be structurally compatible with the plasma processing environment as long as it is structurally resistant to pressure differences and temperatures to be exposed during plasma processing and is chemically compatible with the plasma processing environment, Such as stainless steel, aluminum, or ceramics.

In one embodiment, the substrate support 107 includes a bias electrode 107 for generating an electric field for attracting ions toward the substrate support 107 and thereby toward the substrate 105 held on the substrate support 107. In one embodiment, (112). Further, in one embodiment, the substrate support 107 includes a plurality of cooling channels 116 through which cooling fluid may flow during plasma processing operations to maintain temperature control of the substrate 105. Further, in one embodiment, the substrate support 107 may include a plurality of lifting pins 411 defined to lift and lower the substrate 105 relative to the substrate support 107. In one embodiment, the door assembly 413 is disposed within the chamber wall 401A to enable insertion and removal of the substrate 105 into / from the chamber 401. Additionally, in one embodiment, the substrate support 107 is defined as an electrostatic chuck mounted to generate a static charge to firmly hold the substrate 105 on the substrate support 107 during plasma processing operations .

The system 400 is positioned above the substrate support 107 and away from the substrate support 107 in order to be located on the substrate 105 and away from the substrate 105 when positioned on the substrate support 107. [ 401) disposed in the top plate assembly (407). The substrate processing area 106 is between the top plate assembly 407 and the substrate support 107 to be on the substrate 105 when positioned on the substrate support 107. As previously noted, in one embodiment, the substrate support 107 has a process gap distance as measured vertically across the processing region 106 between the top plate assembly 407 and the substrate support 107 To be adjustable within a range extending from about 2 cm to about 10 cm. Further, in one embodiment, the vertical position of the substrate support 107 relative to the top plate assembly 407, or vice versa, is adjustable during or during the plasma processing operations.

The upper plate assembly 407 has a lower surface exposed to the processing region 106 and opposite the upper surface of the substrate support 107. The top plate assembly 407 includes a first plurality of plasma ports connected to supply reactive components of the first plasma 101A to the processing region 106. [ 3A, the first plurality of plasma microchambers 101 are disposed over the top surface of the top plate assembly 407, and the first plurality of plasma ports are connected to the first plurality of plasma microchannels 101. In one embodiment, Lt; RTI ID = 0.0 > 101 < / RTI > Thus, the first plurality of plasma ports serve to position the apertures of the first plurality of plasma microchambers 101 in fluid communication with the processing region 106. It should be understood that each of the first plurality of plasma microchambers corresponds to the first plasma chamber 101, as described above with respect to Figures 1-2G.

The top plate assembly 407 also includes a second plurality of plasma ports connected to supply reactive components of the second plasma 102A to the processing region 106. [ 3A, a second plurality of plasma microchambers 102 are disposed over the top surface of the top plate assembly 407, and a second plurality of plasma ports are disposed in a second plurality of plasma micro- Lt; RTI ID = 0.0 > 102 < / RTI > Thus, the second plurality of plasma ports serve to position the apertures of the second plurality of plasma microchambers 102 in fluid communication with the processing region 106. It should be understood that each of the second plurality of plasma microchambers corresponds to the second plasma chamber 102, as described above with respect to Figures 1-2G.

Each of the first plurality of plasma microchambers 101 generates a first plasma 101A and is applied to one or more of the first plurality of plasma ports defined along the bottom surface of the top plate assembly 407 1 plasma < RTI ID = 0.0 > 101A. ≪ / RTI > Similarly, each of the second plurality of plasma microchambers 102 generates a second plasma 102A, and one of the second plurality of plasma ports defined along the lower surface of the top plate assembly 407 To supply the reactive components 108B of the second plasma 102A.

Figure 3b shows a horizontal cross-sectional view A-A as referenced in Figure 3a, in accordance with an embodiment of the present invention. As shown in FIG. 3B, the first and second plasma ports are arranged such that the first plurality of plasma ports are interspersed between the second plurality of plasma ports in a substantially uniform manner over the bottom surface of the top plate assembly 407, The microchambers 101/102 are interspersed over the top plate assembly 407. In one embodiment, the first and second plasma microchambers 101/102 are defined to have an inner diameter within a range extending from about 1 cm to about 2 cm. Further, in one embodiment, the total number of the first and second plasma microchambers 101/102 is about 100. In another exemplary embodiment, the total number of the first and second plasma microchambers 101/102 is within a range extending from about 40 to about 60, 1 and the second plasma ports is about 100.

It should be appreciated that the spacing between the first and second plasma microchambers 101/102 over the top plate assembly 407 can vary between different embodiments. 3C illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is reduced, according to one embodiment of the present invention . Figure 3d illustrates a variation of the horizontal cross-sectional view of Figure 3b where the spacing between the first and second plasma microchambers 101/102 over the top plate assembly 407 is increased, according to one embodiment of the present invention . 3E illustrates a variation of the horizontal cross-sectional view of FIG. 3B where the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is non-uniform, according to one embodiment of the present invention. do.

The above described exemplary embodiments of the number of first and second plasma microchambers 101/102 and / or the number of plasma ports in the bottom surface of the top plate assembly 407 facilitate the description of the present invention And are not intended to represent the limitations of the invention in any way. In other embodiments, essentially any configuration / number of first and second plasma microchambers 101/102 and / or plasma ports in the bottom surface of the top plate assembly 407 may be provided on the substrate 105 May be defined and arranged as needed to provide an appropriate mix of radical and ion components within the processing region 106 to achieve the desired plasma processing results.

The first and second plasma microchambers 101/102 are defined to operate in a synchronous or pulsed manner. The operation of the first and second plasma microchambers 101/102 in the pulsed manner may be performed in a first plurality of plasma microchambers 101 or a second plurality Plasma micro-chambers 102. The plasma micro- In one embodiment, each of the first plurality of plasma microchambers 101 may be a hollow cathode chamber, or an electron cyclotron resonance chamber, or a microwave driven chamber, or an inductively coupled chamber, or a capacitively coupled chamber ≪ / RTI > Further, in one embodiment, each of the second plurality of plasma microchambers 102 may be a hollow cathode chamber, or an electron cyclotron resonance chamber, or a microwave driven chamber, or an inductively coupled chamber, Which is a chamber.

In one exemplary embodiment, the plasma microchambers 101 or 102, which are primarily responsible for supplying a radical component to the processing region 106, are defined as microwave driven plasma microchambers. Further, in one exemplary embodiment, the plasma microchambers 101 or 102, which are primarily responsible for ionic component supply to the processing region 106, may include hollow cathode plasma microchambers, electron cyclotron resonance plasma microchambers, Coupled plasma microchambers, or one type of resonant discharge plasma microchambers. In one particular exemplary embodiment, each of the first plurality of plasma microchambers 101 includes an inductive coupled plasma microchamber 101 (FIG. 1) primarily responsible for supplying the radical components to the processing region 106 ). Further, in this particular exemplary embodiment, each of the second plurality of plasma microchambers 102 includes a capacitively coupled plasma microchamber 102 (FIG. 1) primarily responsible for supplying ion components to the processing region 106 ).

The above-described exemplary embodiments of the types of the first and second plasma microchambers 101/102 are provided to facilitate the description of the present invention and do not represent limitations of the present invention in any way . In other embodiments, the first and second plasma microchambers 101/102 may be configured to include a reactive component 106 in the processing region 106, which is primarily responsible for supplying them to achieve the desired plasma processing results on the substrate 105. [ The first and second plasma microchambers 101/102 are essentially any combination of types of plasma microchambers or plasma microchambers, as long as they are defined to supply the type (s) of the plasma microchambers (s) Can be defined.

The system 400 further includes a first power supply 103A that is defined to supply a first power to the first plurality of plasma microchambers 101. [ The system 400 also includes a first process gas supply 104A that is defined to supply a first process gas to a first plurality of plasma microchambers 101. [ The system 400 also includes a second power supply 103B that is defined to supply a second power to a second plurality of plasma microchambers 102. [ The system 400 also includes a second process gas supply 104B defined to supply a second process gas to a second plurality of plasma microchambers 102. [ In one embodiment, the first and second power supplies 103A / 103B are independently controllable. In one embodiment, the first and second process gas supplies 104A / 104B are independently controllable. In one embodiment, both the first and second power supplies 103A / 103B, and the first and second process gas supply units 104A / 104B are independently controllable. In one embodiment, the first power supplied to the first plurality of plasma microchambers 101 is either DC power, RF power, or a combination of DC and RF power. Further, in one embodiment, the second power supplied to the second plurality of plasma microchambers 102 is either DC power, RF power, or a combination of DC and RF power.

It should be appreciated that for the supply of RF power by either the first and second power supplies 103A / 103B, the supplied RF power can be independently controllable with respect to the RF power frequency and / or amplitude. In addition, each of the first and second power supplies 103A / 103B may be connected to a first plurality of plasma microchambers 101/102 to ensure efficient RF power transmission to each of the first and second plurality of plasma microchambers 101 / ≪ / RTI > includes each matching circuit being transmitted. In one embodiment, the first power supplied by the first power supply 103A to each of the first plurality of plasma microchambers 101 has a frequency of either 2 MHz, 27 MHz, 60 MHz, or 400 kHz And the second power supplied by the second power supply 103B to each of the second plurality of plasma microchambers 102 is RF power having either a frequency of 2 MHz, 27 MHz, 60 MHz, or 400 kHz, to be. In this embodiment, the first and second powers have at least one different frequency.

During the operation of the system 400, the process gases supplied by the first and second process gas supplies 104A / 104B are supplied to the first and second plasma microchambers 101/102, respectively, And converted into the first and second plasmas 101A / 102A, respectively. The reactive species in the first and second plasmas 101A / 102A are transferred from the first and second plurality of plasma microchambers 101/102 onto the substrate support 107, To the substrate processing area 106 on the substrate 105.

In one embodiment, when entering the substrate processing region 106 from the first and second plurality of plasma microchambers 101/102, the process gas used flows through the peripheral vents 427 and is discharged And is pumped out through the discharge ports 429 by the pump 431. In one embodiment, a flow throttling device 433 is provided to control the flow rate of the process gas used from the substrate processing region 106. In one embodiment, flow throttling device 433 is defined as a ring structure that is movable toward and away from peripheral vents 427, as indicated by arrows 435. [

In order for system 400 to transfer reactive component fluxes coupled to substrate 105 in a substantially uniform manner from each type of plasma source, a large number of different types of small plasma sources, It should be appreciated that a large number of one type of small plasma sources interspersed between the plasma microchambers 102, i.e., the first plurality of plasma microchambers 101, is used. In one embodiment, one type of plasma source produces a greater density of radical components than the ion components, while the other type of plasma source produces ion components of greater density than the radical components, Thereby providing independent control of ion and radical concentrations in the processing region 106. [

FIG. 4A illustrates another system 500 for substrate plasma processing, in accordance with an embodiment of the present invention. The system 500 is shown in Figure 3A with respect to the chamber 401, the substrate support 107, the peripheral vents 427, the flow throttling device 433, the discharge ports 429, (400). ≪ / RTI > However, the system 500 includes variations on the first and second plurality of plasma microchambers 101/102 disposed over the top plate assembly 407A, as described above with respect to Fig. 3A. In detail, instead of including many instances of the first and second plasma microchambers 101/102 to supply their respective reactive components to the plasma ports in the top plate assembly 407, the system 500 Is configured to generate a first plasma 101A and a first plasma chamber 501 defined to supply the reactive components of the first plasma 101A to each of the first plurality of plasma ports in the top plate assembly 407 ). Similarly, the system 500 may include a plurality of plasma ports 102A defined to generate the second plasma 102A and to supply the reactive components of the second plasma 102A to each of the second plurality of plasma ports in the top plate assembly 407, And a second plasma chamber 502.

In one embodiment, the system 500 includes a single instance of a first plasma chamber 501 for supplying reactive components of the first plasma 101A to the processing region 106. In one embodiment, In addition, in this embodiment, the system 500 includes a single instance of a second plasma chamber 501 for supplying reactive components of the second plasma 102A to the processing region 106. [ In other embodiments, the system 500 may include more than one instance of the first plasma chamber 501 for supplying reactive components of the first plasma 101A to the processing region 106, Here, each instance of the first plasma chamber 501 is fluidly connected to a plurality of plasma ports in the top plate assembly 407. Similarly, in other embodiments, the system 500 may include more than one instance of a second plasma chamber 502 for supplying reactive components of the second plasma 102A to the processing region 106 , Wherein each instance of the second plasma chamber 502 is fluidly connected to a plurality of plasma ports in the top plate assembly 407.

It should also be appreciated that the features and operating conditions previously described with respect to the first plasma chamber 101 of Figures 2A-2D are equally applicable to the first plasma chamber 501. [ It should also be appreciated that the features and operating conditions previously described with respect to the second plasma chamber of Figs. 2A-2D are equally applicable to the second plasma chamber 502. [

The plasma ports in the top plate assembly 407 that are fluidly connected to the first plasma chamber 501 are substantially uniformly spaced from the plasma ports in the top plate assembly 407 fluidly connected to the second plasma chamber 502 Lt; RTI ID = 0.0 > 407 < / RTI > Figure 4b shows a horizontal cross-sectional view B-B as referenced in Figure 4a, in accordance with an embodiment of the present invention. As shown in FIG. 4B, the outputs of the first and second plasma chambers 501/502 are interspersed over the top plate assembly 407 in a substantially uniform manner.

It should be appreciated that the spacing between the plasma ports associated with the first and second plasma chambers 501/502 over the top plate assembly 407 can vary between different embodiments. 4C is a cross-sectional view of FIG. 4B in which the spacing between plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407, in accordance with an embodiment of the present invention, Lt; / RTI > 4D is a cross-sectional view of the horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407, according to an embodiment of the present invention, Lt; / RTI > 4E is a horizontal section of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407 is non-uniform, according to one embodiment of the present invention Fig.

In one embodiment, the first plasma chamber 501 is primarily responsible for supplying the radical components to the processing region 106 and the second plasma chamber 502 is responsible for supplying the ion components to the processing region 106 Mainly responsible. In this embodiment, the large plasma generation volume of the first plasma chamber 501 is used to feed a number of radical component dispense ports into the top plate assembly 407. Also, in this embodiment, a large plasma generation volume of the second plasma chamber 502 is used to feed a plurality of ion component dispense ports in the top plate assembly 407. [ In this embodiment, a plurality of radical and ion dispense ports are interspersed with each other to provide a substantially uniform mixture of radicals / ions in the processing region 106.

The system 500 also includes a first power supply 103A defined to supply power to the first plasma chamber 501 and a first process gas supply 104A defined to supply a process gas to the first plasma chamber. . The system 500 also includes a second power supply 103B defined to supply power to the second plasma chamber 502 and a second power supply 103B defined to supply process gas to the second plasma chamber 502. [ And a supply unit 104B. Any of the first and second power supplies 103A / 103B can be independently controlled or the first and second process gas supply units 104A / 104B can be independently controlled in the system 500, Independently controllable, or both the first and second power supplies 103A / 103B and the first and second process gas supply units 104A / 104B are independently controllable. Additionally, in one embodiment, the first and second plasma chambers 501/502 of the system 500 are defined to operate in either a simultaneous or pulsed manner. When operated in a pulsed manner, the first plasma chamber 501 or the second plasma chamber 502 is operated at a given time, and the first and second plasma chambers 501/502 are operated in an alternating sequence .

5A illustrates another system 600 for substrate plasma processing, in accordance with an embodiment of the present invention. The system 600 is essentially equivalent to the system 400 of FIG. 3A with respect to the chamber 401 and the substrate support 107. However, the system 600 includes a first set of plasma microchambers 605 and a second set of plasma microchambers 603 formed in the exit channels 607, as previously described with respect to Figure 3A. To replace the top plate assembly 601 and the top plate assembly 407 that comprise the top plate assembly.

The system 600 includes a chamber 401 having a top structure 401B, a bottom structure 401C and side walls 401A extending between the top and bottom structures 401B / 401C. The chamber 401 also includes a processing region 106. The substrate support 107 is disposed within the chamber 401 and has a top surface defined to support the substrate 105 at the exposed portion to the processing region 106. The top plate assembly 601 is disposed within the chamber 401 above the substrate support 107. The upper plate assembly 601 is exposed to the processing region 106 and has a lower surface opposite the upper surface of the substrate support 107.

The top plate assembly 601 includes a first set of plasma microchambers 605 formed respectively on the bottom surface of the top plate assembly 601. The top plate assembly 601 also includes a gas supply channel 611 configured to flow a first process gas from the first gas supply 104A to each of the first set of plasma microchambers 605, . The supply of the first process gas to the first network of gas supply channels 611 is indicated by the lines 611A of FIG. 5A. Each of the first set of plasma microchambers 605 is connected to receive power from a first power supply 103A and is configured to convert the first process gas from the exposed portion to the first plasma to the first plasma It is defined to use this received power. The supply of the first power to the first set of plasma microchambers 605 is also indicated by the lines 611A of Fig. 5A.

A first set of power transfer components 615 is disposed within the top plate assembly 601 for the first set of plasma microchambers 605, respectively. Each of the first set of power transfer components 615 receives a first power from a first power supply 103A and a first power to its associated one of the first set of plasma microchambers 605 . In one embodiment, each of the first set of power transfer components 615 is defined as a coil configured to circumscribe a given one of the first set of plasma microchambers 605. However, it should be appreciated that in other embodiments, the first set of power transfer components 615 may be defined in other ways than the coils. For example, in one embodiment, each of the first set of power transfer components 615 is configured and arranged to carry a first power to its associated one of the first set of plasma microchambers 605 Is defined as one or more electrodes.

The top plate assembly 601 also includes a set of discharge channels 607 formed through the bottom surface of the top plate assembly 601 to provide for the removal of exhaust gases from the processing region 106. Each discharge channel 607 is fluidly connected to a discharge fluid delivery system 607A such as channels, tubing, plenum (s), etc., which in turn is fluidly connected to a discharge pump 619. The drain pump 619 applies a suction to the set of drain channels 607 through the drain fluid delivery system 607A to remove process gases from the processing region 106. [ Process gases flowing into the processing region 106 through the first set of plasma microchambers 605 are directed toward the discharge channels 607 and into the discharge channels 607 as indicated by arrows 617 .

A second set of plasma microchambers 603 are formed within a set of discharge channels 607, respectively. A second network of gas supply channels 609 is formed to flow the second process gas from the second process gas supply 104B to each of the second set of plasma microchambers 603. The supply of the second process gas to the second network of gas supply channels 609 is indicated by the lines 609A of Figure 5A. Each of the second set of plasma microchambers 603 is connected to receive power from a second power supply 103B and converts the second process gas from the exposed portion to the second plasma to the second plasma Lt; / RTI > The supply of the second power to the second set of plasma microchambers 603 is also indicated by lines 609A in Fig. 5A.

A second set of power transfer components 613 are disposed within the top plate assembly 601 for the second set of plasma microchambers 603, respectively. Each of the second set of power transfer components 613 receives a second power from the second power supply 103B and a second power to its associated one of the second set of plasma microchambers 603 . In one embodiment, each of the second set of power transfer components 613 is defined as a coil configured to define a given one of the second set of plasma microchambers 603. However, it should be appreciated that in other embodiments, the second set of power transfer components 613 may be defined in other ways than the coils. For example, in one embodiment, each of the second set of power transfer components 613 is configured and arranged to carry a second power to its associated one of the second set of plasma microchambers 603 Is defined as one or more electrodes.

The electrode 112 within the substrate support 107 is defined to apply a bias voltage across the processing region 106 between the substrate support 107 and the bottom surface of the top plate assembly 601. [ The process gases flowing through the second set of plasma microchambers 603, i.e., the second network of gas supply channels 609 to the discharge channels 607, are withdrawn from the processing region 106, And does not enter the area 106. Thus, since the second set of plasma microchambers 603 are formed in the discharge channels 607, the radicals formed in the second set of plasma microchambers 603 are discharged through the discharge channels 607 Will follow the gas flow path. Ions formed in the second set of plasma microchambers 603 will be attracted to the processing region 106 by a bias voltage applied across the processing region 106 by the electrode 112. [ In this manner, the second set of plasma microchambers 603 can operate as a substantially pure ion source for the processing region 106.

It should be appreciated that the first set of plasma microchambers 605 are interspersed with the second set of plasma microchambers 603 in a substantially uniform manner across the bottom surface of the top plate assembly 601. In this manner, the reactive radical components from the first set of plasma microchambers 605 are removed from the second set of plasma microchambers 603 in the processing region 106 before reaching the substrate 105 Ionic components in a substantially uniform manner. Figure 5b shows a horizontal cross-sectional view C-C as referenced in Figure 5a, in accordance with an embodiment of the present invention. As shown in FIG. 5B, the first and second sets of plasma microchambers 605/603 are distributed in a substantially uniform manner across the bottom surface of the top plate assembly 601.

It should be appreciated that the spacing between the first and second sets of plasma microchambers 605/603 over the bottom surface of the top plate assembly 601 can vary between different embodiments. 5C is a horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers 605/603 over the bottom surface of the top plate assembly 601, according to an embodiment of the present invention, Fig. 5D is a horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers 605/603 over the bottom surface of the top plate assembly 601 is increased, according to one embodiment of the present invention Fig. Figure 5e is a side elevation of the plasma microchambers 605/603 of the first and second sets across the bottom surface of the top plate assembly 601, according to one embodiment of the present invention, Fig.

With respect to the embodiments of Figs. 2A to 2G, 3A to 3E, and 4A to 4E, in the embodiments of Figs. 5A to 5E, the first and second power supplies 103A / 1 and the second gas supply units 104A / 104B can be controlled in various ways. In one embodiment, the first and second power supplies 103A / 103B are independently controllable. In one embodiment, the first and second process gas supplies 104A / 104B are independently controllable. In another embodiment, both the first and second power supplies 103A / 103B and the first and second process gas supply units 104A / 104B are independently controllable. Next, it should be understood that the first and second sets of plasma microchambers 605/603 are defined to operate in either a synchronous or pulsed manner. When operated in a pulsed manner, either the first set of plasma microchambers 605 or the second set of plasma microchambers 603 are operated at a given time, and the first and second sets of plasma microchambers 603, Chambers 605/603 operate in an alternating sequence.

Given the embodiment of FIG. 5A, drivers (e.g., ambipolar diffusion) that cause the plasma to escape from its region of origin may be used by radicals to invert the process gas flow direction to the plasma region It should be appreciated that it can be done in reverse to the drivers that cause it to escape. Adding the upper pumping to the ion sources, i. E., The second set of plasma microchambers 603, results in both a larger ion / neutral flux ratio from the plasma source itself and more efficient ion extraction (wider apertures) . Additionally, in one embodiment, to enable peripheral exhaust flow in addition to the top exhaust flow through the exhaust channels 607, as described above with respect to the embodiments of Figures 3A and 4A, It is to be appreciated that the chamber 401 of the apparatus 100 may additionally include peripheral vents 427, flow throttling device 433, discharge ports 429, and discharge pump 431.

In various embodiments described herein, different ion and radical plasma sources may be process controlled with respect to gas flow, gas pressure, power frequency, power amplitude, on duration, off duration, and timing sequence. In addition, different types of plasma sources may be pulsed to mitigate communication between neighboring plasma sources. Two different plasma source types may also be operated using different gas mixtures to achieve higher flux of ions from one plasma source and higher flux of radicals from another plasma source. Using a mixed array of ions and radical plasma sources, in one embodiment, each plasma source may be connected to its own separately controlled power and gas supplies. Further, in another embodiment, all of the ion plasma sources in the mixed array can be connected to a common gas supply and a common power supply, and all of the radical plasma sources in the mixed array can be connected to other common gas supplies and other common power supplies .

In one embodiment, the system 600 of FIG. 5A represents a semiconductor substrate processing system with a plate assembly 601 having a process-side surface exposed to a plasma processing region 601. The plate assembly 601 includes a discharge channel 607 formed through the process-side surface of the plate assembly 601 to provide for the removal of exhaust gases from the plasma processing region 601. The plasma micro chamber 603 is formed inside the discharge channel. The gas supply channel 609 is formed through the plate assembly 601 to flow the process gas to the plasma microchamber 603 at the discharge channel 607. The power delivery component 613 is formed within the plate assembly 601 to transmit power to the plasma microchamber region 603 to convert the process gas to plasma within the plasma microchamber 603 at the exit channel 607 .

In one embodiment, the power supplied to power transfer component 613 is either DC power, RF power, or a combination of DC and RF power. In one embodiment, the power supplied to the power transfer component 613 is RF power having a frequency of either 2 MHz, 27 MHz, 60 MHz, or 400 kHz. In one embodiment, the power transfer component 613 is defined as a coil formed in the plate assembly 601 to define the plasma microchamber 603 in the discharge channel 607.

The system 600 includes an electrode (not shown) disposed externally of the plate assembly 601 that, when energized, causes ions to be drawn from the plasma microchamber 603 in the discharge channel 607 to the plasma processing region 106 112). The electrode 112 is disposed within the substrate support 107 and the substrate support 107 is positioned to support the substrate 105 at the exposed portion to the plasma processing region 106. In one embodiment, Further, in one embodiment, the exit channel 607 is defined to remove gases from the processing region 106 in a direction substantially perpendicular to and away from the surface of the substrate support 107 on which the substrate 105 is to be supported do.

Figure 6 shows a flow diagram of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention. The method includes an act 701 for placing a substrate 105 on a substrate support 107 at an exposure to the processing region 106. The method also includes an operation 703 for generating a first plasma 101A of the first plasma type. The method also includes an operation 705 for generating a second plasma 102A of a second plasma type that is different from the first plasma type. The method also includes the act of supplying the reactive components 108A / 108B of both the first and second plasma 101A / 102A to the processing region 106 to affect the processing of the substrate 105 707).

The method also includes using a first power and a first process gas to produce a first plasma 101A and an operation to use a second power and a second process gas to produce a second plasma 102A . In one embodiment, the method includes the steps of independently controlling either the first and second powers or the first and second process gases, or both the first and second powers and the first and second process gases Lt; / RTI > Further, in one embodiment, the first power is either DC power, RF power, or a combination of DC and RF power, and the second power is any combination of DC power, RF power, or DC and RF power. In one exemplary embodiment, the first power is RF power having a first frequency of either 2 MHz, 27 MHz, 60 MHz, or 400 kHz, and the second power is RF power of any one of 2 MHz, 27 MHz, 60 MHz, RF power having a frequency, and the second frequency is different from the first frequency.

In the method, the first plasma 101A is generated to have a first rate of radical density versus ion density, and the second plasma 102A is generated to have a second rate of radical density versus ion density. The second ratio of the density of ions to the density of ions in the second plasma 102A is different from the first ratio of the density of ions to the density of ions in the first plasma 101A. Reactive components from both the first and second plasma 101A / 102A are supplied in a substantially uniform manner throughout the processing region 106 at the exposed portion to the substrate 105. [ Also, in various embodiments, the reactive components from the first and second plasmas 101A / 102A are generated and supplied in either a synchronous or pulsed manner. The generation and supply of the first and second plasmas 101A / 102A in a pulsed manner may be performed at a given time and in an alternating sequence, with either the first plasma 101A or the second plasma 102A reactive component Lt; / RTI >

The method may also be used to increase the ion extraction from one or both of the first and second plasmas 101A / 102A to the processing region 106, for example, as described with respect to Figure 2D. For example, to generate an < / RTI > In addition, the method may be used to attract ions from the one or both of the first and second plasma 101A / 102A toward the substrate 105, as described herein with respect to the operation of the electrode 112, And to apply a bias voltage across the processing region 106 from the source region 107.

Additionally, in one embodiment, the method includes the steps of providing reactive components of the first plasma and the second plasma 102A to the processing region 106 where the reactive components of the first plasma 101A are supplied to the processing region 106 And positioning the baffle structure 109 between the second ports to be supplied. In such an embodiment, the method also includes the step of providing the first and second plasma 101A / 102A with one or both of fluid communication and power communication between the first and second ports where the reactive components of the first and second plasma 101A / 102A are discharged into the processing region 106 To control the position of the baffle structure 109 relative to the substrate support 107 to limit the baffle structure 109. [

Figure 7 shows a flow diagram of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention. The method includes an act 801 for placing a substrate 105 on a substrate support 107 at an exposed portion of the processing region 106. The method also includes an operation 803 for operating a first set of plasma microchambers 605 at an exposure to the processing region 106 such that a first set of plasma microchambers 605 Each generate a first plasma and supply reactive components of the first plasma to the processing region 106. [ A first set of plasma microchambers 605 is positioned above the processing region 106 that is opposite from the substrate support 107. The method also includes an act 805 for operating a second set of plasma microchambers 603 at an exposure to the processing region 106 such that a second set of plasma microchambers 603 Each generate a second plasma and supply reactive components of the second plasma to the processing region 106. [ The second plasma differs from the first plasma. The second set of plasma microchambers 603 are also located above the processing region 106 opposite from the substrate support 107 and are substantially uniform between the first set of plasma microchambers 605 .

The method includes the steps of: supplying a first power to a first set of plasma microchambers 605; providing a first set of plasma microchambers 605 for supplying a first process gas to a first set of plasma microchambers 605; Further includes supplying the second process gas to the plasma micro-chambers 603, and supplying the second process gas to the second set of plasma micro-chambers 603. In various embodiments, the method includes the steps of generating either first and second powers or either the first and second process gases, or both the first and second powers and the first and second process gases independently Lt; / RTI > In one embodiment, the first power is either DC power, RF power, or a combination of DC and RF power, and the second power is any one of DC power, RF power, or a combination of DC and RF power. In one exemplary embodiment, the first power is RF power having a first frequency of either 2 MHz, 27 MHz, 60 MHz, or 400 kHz, and the second power is RF power of any one of 2 MHz, 27 MHz, 60 MHz, RF power having a frequency, and the second frequency is different from the first frequency.

The method includes a set of discharge channels 607 defined to remove gases from the processing region 107 in a direction substantially perpendicular to and away from a top surface of a substrate support 107 on which the substrate 105 is disposed, Lt; RTI ID = 0.0 > 106 < / RTI > In one embodiment, the second set of plasma microchambers 603 are each defined within a set of discharge channels 607.

The method includes operating a first set of plasma microchambers (605) to produce a first plasma to have a first rate of radical density versus ion density, and operating a second set of plasma density versus ion density Operating the second set of plasma microchambers (603) to produce a second plasma to have a second density of ions in the second plasma, wherein the second ratio of the density of ions to the density of ions in the second plasma Which is different from the first rate of radical density versus ion density. Also, in embodiments in which the second set of plasma microchambers 603 are each defined within a set of discharge channels 607, the first plasma has a higher density of ions than the ion density, and the second plasma Has a higher ion density than the radical density.

In one embodiment, the method includes operation of the first and second sets of plasma microchambers 605/603 in a synchronous manner. In another embodiment, the first and second sets of plasma microchambers 605/603 may be configured such that a first set of plasma microchambers 605 or a second set of plasma microchambers 603 are provided at a given time And the first and second sets of plasma microchambers 605/603 are operated in a pulsed manner operating in an alternating sequence. Additionally, the method may be performed by one of the first and second plasma generated in the first and second sets of plasma microchambers 605/603, respectively, as described herein for electrode 112 And to apply a bias voltage across the processing region 106 from the substrate support 107 to attract ions from both toward the substrate 105.

While the invention has been described in terms of several embodiments, those skilled in the art will recognize that the various modifications, additions, substitutions and equivalents thereof will be recognized by those skilled in the art upon reading the preceding specification and reviewing the drawings. Accordingly, it is intended that the present invention include all such modifications, additions, substitutions, and equivalents as fall within the true spirit and scope of the present invention.

Claims (55)

A substrate support defined to support a substrate at an exposure to a processing region;
A first plasma chamber being defined to produce a first plasma within an interior region of the first plasma chamber and to supply reactive components of the first plasma from the interior region of the first plasma chamber to the processing region, Wherein the first plasma chamber comprises a first upper electrode located on an upper surface within the interior region of the first plasma chamber and wherein the first upper electrode contacts the interior region of the first plasma chamber with a fluid Wherein the first plasma chamber includes a first lower electrode located on a lower surface within the inner region of the first plasma chamber, The method of claim 1, wherein the first plasma chamber 1 plasma, wherein the first upper electrode and the first lower electrode are positioned in a direction parallel to the substrate support, and the first upper electrode and the first lower electrode are positioned in a direction parallel to the substrate support, Wherein the first lower electrode is separated from the first plasma chamber by the inner region of the first plasma chamber;
A second plasma chamber, wherein the second plasma chamber is defined to produce a second plasma within an interior region of the second plasma chamber and to supply reactive components of the second plasma from the interior region of the second plasma chamber to the processing region, The second plasma chamber comprises a second upper electrode located on the upper surface within the inner region of the second plasma chamber and the second upper electrode is connected to the inner region of the second plasma chamber by a fluid Wherein the second plasma chamber includes a second lower electrode positioned on a lower surface within the inner region of the second plasma chamber, The second plasma chamber, and the second plasma chamber, 2 plasma, wherein the second upper electrode and the second lower electrode are positioned in a direction parallel to the substrate support, and the second upper electrode and the second lower electrode are positioned in a direction parallel to the substrate support, The second lower electrode being separated from each other by the inner region of the second plasma chamber, and wherein the first plasma chamber and the second plasma chamber are defined to be controlled independently;
A discharge channel formed between the first plasma chamber and the second plasma chamber; And
A baffle structure disposed within the discharge channel between the first plasma chamber and the second plasma chamber and separated from the first plasma chamber and the second plasma chamber, Wherein the baffle structure is movable in one direction and in a second direction away from the substrate support, wherein the baffle structure is movable in the first and second directions without corresponding movement of the first plasma chamber and the second plasma chamber Wherein the baffle structure is sized smaller than the discharge channel to provide a discharge flow through the discharge channel between the baffle structure and each of the first plasma chamber and the second plasma chamber, Wherein the semiconductor substrate processing system comprises a baffle structure. The method according to claim 1,
A first power supply configured to supply a first power to the first upper electrode and the first lower electrode in the first plasma chamber;
A first process gas supply configured to supply a first process gas to the interior region of the first plasma chamber;
A second power supply defined to supply a second power to the second upper electrode and the second lower electrode in the second plasma chamber; And
Further comprising: a second process gas supply portion defined to supply a second process gas to the interior region of the second plasma chamber. 3. The method of claim 2,
The first process gas supply unit and the second process gas supply unit may be independently controllable, or the first power supply unit and the second power supply unit may be independently controllable, or the first process gas supply unit and the second process gas supply unit may be independently controllable, Wherein both the first process gas supply and the second process gas supply are independently controllable. 3. The method of claim 2,
Wherein the first power is one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
Wherein the second power is one of DC power, RF power, or a combination of DC power and RF power. The method according to claim 1,
Wherein the first plasma chamber and the second plasma chamber are defined to operate in a synchronous or pulsed manner,
Wherein the pulsed manner comprises the first plasma chamber or the second plasma chamber operating at a given time and in an alternating sequence. The method according to claim 1,
Wherein the substrate support is defined to be movable in a direction perpendicular to an upper surface of the substrate support to which the substrate is to be supported. The method according to claim 1,
Wherein one or both of the first plasma chamber and the second plasma chamber is defined to have an energizable plasma outlet region defined to provide supplemental electron production to increase ion extraction. 3. The method of claim 2,
Wherein the substrate support comprises an electrode defined to apply a bias voltage across the processing area between the substrate support and the first plasma chamber and the second plasma chamber. The method according to claim 1,
Wherein the baffle structure is formed of a dielectric material to reduce power transfer between the first plasma chamber and the second plasma chamber. The method according to claim 1,
The discharge channel extending away from the processing region in a direction perpendicular to an upper surface of the substrate support to which the substrate is to be supported. 11. The method of claim 10,
Wherein the baffle structure is defined to reduce fluid communication between the first plasma chamber and the second plasma chamber. A chamber having a top structure, a bottom structure, and sidewalls extending between the top structure and the bottom structure, the chamber surrounding the processing area;
A substrate support disposed within the chamber and defined to support a substrate at an exposed portion to the processing region; And
A top plate assembly disposed within the chamber above the substrate support, the top plate assembly having a bottom surface exposed in the processing region and opposite the top surface of the substrate support, the top plate assembly having a reactive surface Wherein the top plate assembly includes a second plurality of plasma ports connected to supply reactive components of a second plasma to the processing region, wherein the first plurality of plasma ports are connected to supply components to the processing region,
Wherein the top plate assembly is configured to have an energizable plasma outlet region for the generation of supplemental electrons, wherein one or both of the first plurality of plasma ports and the second plurality of plasma ports system. 13. The method of claim 12,
Wherein the substrate support is defined to be movable in a direction perpendicular to an upper surface of the substrate support to which the substrate is to be supported. 13. The method of claim 12,
Wherein the substrate support comprises an electrode defined to apply a bias voltage across the processing region between the substrate support and the lower surface of the top plate assembly. 13. The method of claim 12,
A first plurality of plasma microchambers each defined to produce the first plasma and to supply reactive components of the first plasma to at least one of the first plurality of plasma ports; And
Further comprising a second plurality of plasma microchambers each defined to produce the second plasma and to supply reactive components of the second plasma to at least one of the second plurality of plasma ports. 16. The method of claim 15,
A first power supply configured to supply a first power to the first plurality of plasma microchambers;
A first process gas supply configured to supply a first process gas to the first plurality of plasma microchambers;
A second power supply configured to supply a second power to the second plurality of plasma microchambers; And
Further comprising: a second process gas supply section defined to supply a second process gas to the second plurality of plasma microchambers. 17. The method of claim 16,
The first process gas supply unit and the second process gas supply unit may be independently controllable, or the first power supply unit and the second power supply unit may be independently controllable, or the first process gas supply unit and the second process gas supply unit may be independently controllable, Wherein both the first process gas supply and the second process gas supply are independently controllable. 13. The method of claim 12,
A first plasma chamber defined to generate the first plasma and supply reactive components of the first plasma to each of the first plurality of plasma ports; And
Further comprising a second plasma chamber defined to generate the second plasma and supply reactive components of the second plasma to each of the second plurality of plasma ports. 19. The method of claim 18,
A first power supply defined to supply a first power to the first plasma chamber;
A first process gas supply configured to supply a first process gas to the first plasma chamber;
A second power supply defined to supply a second power to the second plasma chamber; And
Further comprising: a second process gas supply portion defined to supply a second process gas to the second plasma chamber. 20. The method of claim 19,
The first process gas supply unit and the second process gas supply unit may be independently controllable, or the first power supply unit and the second power supply unit may be independently controllable, or the first process gas supply unit and the second process gas supply unit may be independently controllable, Wherein both the first process gas supply and the second process gas supply are independently controllable. A method for processing a semiconductor substrate,
Disposing a substrate on a substrate support at an exposed portion to a processing region;
Generating a first plasma of a first plasma type within an interior region of a first plasma chamber, wherein the first plasma chamber includes a first upper electrode located on an upper surface within the interior region of the first plasma chamber Wherein said first upper electrode includes at least one hole defined to enable fluid communication of a first process gas to said interior region of said first plasma chamber, The first lower electrode being capable of transferring reactive components of the first plasma from the inner region of the first plasma chamber to the processing region, the first lower electrode being located on a lower surface within the inner region of the first plasma chamber, The first upper electrode and the first lower electrode, Electrode includes the steps of producing the first plasma, separated from one another by said inner region located in a direction parallel to said substrate support, said first top electrode and said first bottom electrode of the first plasma chamber;
Generating a second plasma of a second plasma type within the interior region of the second plasma chamber, wherein the second plasma chamber includes a second upper electrode located on an upper surface within the interior region of the second plasma chamber And wherein the second upper electrode includes at least one hole defined to enable fluid communication of a second process gas to the interior region of the second plasma chamber, Said second lower electrode being capable of transferring reactive components of said second plasma from said inner region of said second plasma chamber to said processing region, said second lower electrode being located on a lower surface within said inner region of said second plasma chamber, And at least one hole defined for said second upper electrode and said second lower And the second upper electrode and the second lower electrode are separated from each other by the inner region of the second plasma chamber, and the second plasma type is formed in the first plasma type Wherein the first plasma chamber and the second plasma chamber are independently controlled; generating the second plasma; And
Supplying reactive components of both the first plasma and the second plasma to the processing region to affect processing of the substrate;
Positioning a baffle structure in an exit channel positioned between the first plasma chamber and the second plasma chamber, wherein the baffle structure is configured such that the discharge flow is directed between the baffle structure and each of the first plasma chamber and the second plasma chamber, Positioning the baffle structure such that it is sized smaller than the discharge channel to be provided from the processing region through the discharge channel; And
Moving the baffle structure in a first direction toward the substrate support without corresponding movement of the first plasma chamber and the second plasma chamber or moving the baffle structure in a first direction toward the substrate support without corresponding movement of the first plasma chamber and the second plasma chamber, And moving the baffle structure in a second direction away from the substrate support. 22. The method of claim 21,
Wherein the first plasma is generated to have a first rate of radical density versus ion density,
Wherein the second plasma is generated to have a second ratio of the density of ions to the density of ions,
Wherein the second ratio of the radial density versus ion density in the second plasma is different from the first ratio of the radial density in the first plasma to the ion density. 22. The method of claim 21,
Using a first power and a first process gas to produce the first plasma; And
Further comprising using a second power and a second process gas to produce the second plasma. ≪ Desc / Clms Page number 17 > 24. The method of claim 23,
The first power and the second power, or the first process gas and the second process gas, or both the first power and the second power, and both the first process gas and the second process gas independently ≪ / RTI > further comprising the step of: 24. The method of claim 23,
Wherein the first power is one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
Wherein the second power is one of DC power, RF power, or a combination of DC power and RF power. 22. The method of claim 21,
Wherein reactive components from both the first plasma and the second plasma are applied across the processing region at an exposed portion to the substrate ≪ / RTI > is supplied in a uniform manner. 22. The method of claim 21,
Wherein the reactive components from the first plasma and the second plasma are generated and supplied either in a synchronous or pulsed manner,
Wherein the pulsed scheme comprises the generation and supply of reactive components of either the first plasma or the second plasma at a given time and in an alternating sequence. 22. The method of claim 21,
Further comprising generating supplemental electrons to increase ion extraction from one or both of the first plasma and the second plasma to the processing region. ≪ Desc / Clms Page number 19 > 22. The method of claim 21,
Further comprising applying a bias voltage across the processing region from the substrate support to attract ions from one or both of the first plasma and the second plasma toward the substrate. . 22. The method of claim 21,
Wherein the baffle structure is formed of a dielectric material to reduce power transfer between the first plasma chamber and the second plasma chamber. A plate assembly having a process-side surface exposed to a plasma processing region;
A discharge channel formed through the process-side surface of the plate assembly to provide removal of exhaust gases from the plasma processing region;
A plasma micro chamber formed within the discharge channel;
A gas supply channel formed through the plate assembly to flow the process gas into the plasma microchamber in the discharge channel; And
And a power delivery component formed within the plate assembly to transmit power to the plasma microchamber to convert the process gas into a plasma within the plasma microchamber within the discharge channel. 32. The method of claim 31,
Further comprising an electrode disposed outside the plate assembly that, when energized, causes ions to be drawn from the plasma micro chamber in the discharge channel to the plasma processing region. 33. The method of claim 32,
Further comprising a substrate support disposed to support a substrate in an exposed portion for the plasma processing region,
Wherein the electrode is disposed within the substrate support. 34. The method of claim 33,
Wherein the exit channel is defined to remove gasses from the processing region in a direction perpendicular to and away from the surface of the substrate support to which the substrate is to be supported. 32. The method of claim 31,
A power supply defined to supply the power to the power transfer component; And
Further comprising: a process gas supply unit configured to supply a process gas to the gas supply channel. 32. The method of claim 31,
Wherein the power transfer component is defined as a coil formed within the plate assembly to circumscribe the plasma microchamber within the discharge channel. A chamber having a top structure, a bottom structure, and sidewalls extending between the top structure and the bottom structure, the chamber including a processing region;
A substrate support disposed within the chamber, the substrate support having a top surface defined to support a substrate at an exposed portion to the processing region;
A top plate assembly disposed within the chamber above the substrate support, the top plate assembly having a bottom surface exposed to the processing region and opposite a top surface of the substrate support,
The upper plate assembly includes:
A first set of plasma microchambers, each defined by the lower surface of the top plate assembly,
A first network of gas supply channels configured to flow a first process gas into each of the first set of plasma microchambers, wherein each of the first set of plasma microchambers includes a first set of plasma microchambers, A first network of gas supply channels defined to convert one process gas into a first plasma,
A set of discharge channels formed through the lower surface of the top plate assembly to provide removal of exhaust gases from the processing region,
A second set of plasma microchambers respectively formed within said one set of discharge channels, and
A second network of gas supply channels configured to flow a second process gas into each of the second set of plasma microchambers, wherein each of the second set of plasma microchambers includes a first set of plasma microchambers, 2. A semiconductor substrate processing system, comprising: a second network of gas supply channels defined to convert process gas to a second plasma. 39. The method of claim 37,
Wherein the first set of plasma microchambers are interspersed with the second set of plasma microchambers in a uniform manner across the bottom surface of the top plate assembly. 39. The method of claim 37,
A first power supply configured to supply a first power to the first set of plasma microchambers;
A first process gas supply configured to supply a first process gas to the first network of gas supply channels;
A second power supply defined to supply a second power to the second set of plasma microchambers; And
Further comprising: a second process gas supply section defined to supply a second process gas to the second network of gas supply channels. 40. The method of claim 39,
The first process gas supply unit and the second process gas supply unit may be independently controllable, or the first power supply unit and the second power supply unit may be independently controllable, or the first process gas supply unit and the second process gas supply unit may be independently controllable, Wherein both the first process gas supply and the second process gas supply are independently controllable. 40. The method of claim 39,
A first set of power transfer components each disposed within the top plate assembly for the first set of plasma microchambers, wherein each of the first set of power transfer components includes a first set of power transfer components The first set of power transfer components connected to receive; And
A second set of power transfer components each disposed within the top plate assembly for the second set of plasma microchambers, each of the second set of power transfer components receiving the second power from the second power supply Said second set of power transfer components being connected to receive said second set of power transfer components. 39. The method of claim 37,
Wherein the first set of plasma microchambers and the second set of plasma microchambers are defined to operate in a synchronous or pulsed manner,
Wherein the pulsed manner comprises either the first set of plasma microchambers or the second set of plasma microchambers operating at a given time and in an alternating sequence. 39. The method of claim 37,
Wherein the substrate support is defined to be movable in a direction that extends vertically between the upper surface of the substrate support to which the substrate is to be supported and the lower surface of the upper plate assembly. 39. The method of claim 37,
Wherein the substrate support comprises an electrode defined to apply a bias voltage across the processing region between the substrate support and the lower surface of the top plate assembly. A method for processing a semiconductor substrate,
Disposing a substrate on a substrate support at an exposed portion to a processing region;
Operating a first set of plasma microchambers in an exposure portion for the processing region, wherein each of the first set of plasma microchambers generates a first plasma and applies reactive components of the first plasma to the processing region Wherein the first set of plasma microchambers are located above the processing region opposite from the substrate support, the method comprising: operating the first set of plasma microchambers;
Operating a second set of plasma microchambers at an exposure for the processing region, wherein each of the second set of plasma microchambers generates a second plasma and applies reactive components of the second plasma to the processing region Wherein the second plasma is different from the first plasma and the second set of plasma microchambers are located above the processing region opposite from the substrate support and between the first set of plasma microchambers Operating the second set of plasma microchambers, interspersed in a uniform manner; And
Removing the exhaust gases from the processing region through a set of exhaust channels defined to remove gases from the processing region away from an upper surface of the substrate support where the substrate is located and perpendicular to the upper surface, Including,
Wherein the second set of plasma microchambers are each defined within the set of discharge channels. 46. The method of claim 45,
Supplying a first power to the first set of plasma microchambers;
Supplying a first process gas to the first set of plasma microchambers;
Supplying a second power to the second set of plasma microchambers; And
And supplying a second process gas to the second set of plasma microchambers. ≪ Desc / Clms Page number 21 > 47. The method of claim 46,
The first power and the second power, or the first process gas and the second process gas, or both the first power and the second power, and both the first process gas and the second process gas independently ≪ / RTI > further comprising the step of: 47. The method of claim 46,
Wherein the first power is one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
Wherein the second power is one of DC power, RF power, or a combination of DC power and RF power. 46. The method of claim 45,
Operating the first set of plasma microchambers to produce the first plasma to have a first ratio of the first plasma density to the second plasma density; And
Operating the second set of plasma microchambers to produce the second plasma so as to have a second ratio of the ion density to the second plasma density, Further comprising operating the second set of plasma microchambers wherein the ratio is different from the first ratio of the density of ions to the density of ions in the first plasma. 50. The method of claim 49,
Wherein the first plasma has a higher density of ions than the ion density,
Wherein the second plasma has a higher ion density than the radical density. 46. The method of claim 45,
Wherein the first set of plasma microchambers and the second set of plasma microchambers are operated in a simultaneous manner. 46. The method of claim 45,
Wherein the first set of plasma microchambers and the second set of plasma microchambers are operated in a pulsed manner,
Wherein the pulsed manner comprises operation of either the first set of plasma microchambers or the second set of plasma microchambers at a given time and in an alternating sequence. 46. The method of claim 45,
Further comprising applying a bias voltage across the processing region from the substrate support to attract ions from one or both of the first plasma and the second plasma toward the substrate. . delete delete

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