TW201301388A - Semiconductor processing system having multiple decoupled plasma sources - Google Patents

Abstract

A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.

Description

Semiconductor system with a plurality of decoupled plasma sources

This invention relates to a semiconductor processing system, and more particularly to a semiconductor processing system having a plurality of decoupled plasma sources.

Plasma sources used in thin film processing in the manufacture of semiconductor devices often fail to achieve the most desirable dry etching conditions due to the inability to separately control the ion and radical concentrations in the plasma. For example, in some applications, the desired conditions for plasma etching will be achieved by increasing the ion concentration in the plasma while maintaining the free radical concentration at a fixed level. However, independent control of this type of ion concentration versus free radical concentration cannot be achieved using a typical plasma source typically used for thin film processing. The invention is presented herein.

In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a substrate support defined to support a substrate that is exposed to the processing region. The system also includes a first plasma chamber defined to produce a first plasma and supply a reactive component of the first plasma to the processing region. The system also includes a second plasma chamber defined to produce a second plasma and supply a reactive component of the second plasma to the processing zone. The first and second plasma chambers are defined to be independently controlled.

In another embodiment, a semiconductor substrate processing system is disclosed. The system includes a chamber having a top configuration, a bottom configuration, and a sidewall extending between the top and bottom configurations. The chamber surrounds the treatment area. A substrate support is disposed within the chamber and is defined to support a substrate that is exposed to the processing region. The system also includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly has a lower surface that is exposed to the processing region and opposite the top surface of the substrate support. The top plate assembly includes a first plurality of plasma mashes that are coupled to supply a reactive component of the first plasma to the processing region. The top plate assembly also includes reactive components that are connected to supply a second plasma to the processing region The second plurality of plasma sputum.

In another embodiment, a method of processing a semiconductor substrate is disclosed. The method includes the operation of placing the substrate on a substrate support that is exposed to the processing region. The method also includes the operation of producing a first plasma of the first plasma type. The method also includes the operation of producing a second plasma of a second plasma type different from the first plasma type. The method further includes the operation of supplying the reactive components of both the first and second plasmas to the processing zone for treatment of the substrate.

In one embodiment, a semiconductor substrate processing system is disclosed. The system includes a plate assembly having a treated side surface exposed to a plasma processing zone. The exhaust passage is formed through the treated side surface of the plate assembly for removal of exhaust gases from the plasma processing region. A plasma microchamber is formed inside the discharge passage. Also, the gas supply passage is formed through the plate assembly to allow the process gas to flow to the plasma microchamber in the discharge passage. Also, a power transfer member is formed in the plate assembly to transfer power to the plasma microchamber, and the process gas is converted into plasma in the plasma microchamber in the discharge passage.

In another embodiment, a semiconductor substrate processing system is disclosed. The system includes a chamber having a top configuration, a bottom configuration, and a sidewall extending between the top and bottom configurations. The chamber contains a treatment area. A substrate support member is disposed within the chamber. The substrate support has a top surface defined to support the substrate exposed to the processing region. The system also includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly has a lower surface that is exposed to the processing region and opposite the top surface of the substrate support. The top plate assembly includes a first set of plasma microchambers each formed into a lower surface of the top plate assembly. The top plate assembly also includes a first gas supply channel network formed to flow the first process gas to each of the first set of plasma microchambers. Each of the first set of plasma microchambers is defined to convert the first process gas into a first plasma that is exposed to the treatment zone. The top plate assembly also includes a plurality of discharge passages formed through the lower surface of the top plate assembly for removing exhaust gases from the processing region. The top plate assembly also includes a second component plasma microchamber that is formed inside the set of exhaust passages. The top plate assembly further includes a second gas supply channel network formed to flow the second process gas to each of the second set of plasma microchambers. Each of the second set of plasma microchambers is defined to convert the second process gas into a second plasma that is exposed to the treatment zone.

In another embodiment, a method of processing a semiconductor substrate is disclosed. The method includes the operation of placing the substrate on a substrate support that is exposed to the processing region. The method also includes operating a first set of plasma microchambers exposed to the processing zone, whereby each of the first set of plasma microchambers produces a first plasma and supplies the reactive components of the first plasma to Processing area. The first set of plasma microchambers are located above the processing zone relative to the substrate support. The method also includes operating a second set of plasma microchambers exposed to the processing zone, whereby each of the second set of plasma microchambers produces a second plasma and supplies the reactive component of the second plasma to Processing area. The second plasma is different from the first plasma. Also, a second set of plasma microchambers is positioned above the processing region relative to the substrate support. The second set of plasma microchambers are interspersed between the first set of plasma microchambers in a substantially average manner.

Other aspects and advantages of the invention will be apparent from the description of the appended claims.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be apparent to those skilled in the art that the invention may be practiced without some or all of these specific details. In other instances, well-known processing operations have not been described in detail in order not to obscure the invention.

In order to achieve decoupling control of ion and radical concentrations in the plasma processing zone, various embodiments of the invention include independently controllable control parameters using independent control parameters where the substrate to be processed is disposed within the plasma processing zone. For example, two or more types of plasma generating devices of the plasma chamber, the two or more types of plasma generating devices are fluidly connected to the plasma processing region. For example, in an embodiment, the first plasma chamber can be operated to produce a first plasma having a free radical concentration above the ion concentration. Also, in this exemplary embodiment, the second plasma chamber can be operated to produce a second plasma having an ion concentration above the free radical concentration. The first and second plasma chambers are both fluidly coupled to the same substrate processing region such that the first plasma chamber is operated to control one of the number of free radical components in the substrate processing region, and The two plasma chambers are operated to control one of the number of ionic components in the substrate processing region. In this manner, the first plasma chamber is controlled to adjust the ion concentration in the substrate processing region, and the second plasma chamber is controlled to adjust the concentration of free radicals in the substrate processing region.

In one embodiment, the term "substrate" as used herein refers to a semiconductor wafer. It should be understood, however, that in other embodiments, the term "substrate" as used herein may mean a substrate formed of sapphire, GaN, GaAs or SiC, or other substrate material, and may include a glass panel/substrate, metal foil, Metal foil, polymeric material, or the like. Moreover, in various embodiments, the "substrate" referred to herein may be changed in form, shape, and/or size. For example, in some embodiments, a "substrate" as referred to herein may correspond to a 200 mm (mm) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. Also, in some embodiments, the "substrate" referred to herein may correspond to a non-circular substrate other than other shapes, such as a rectangular substrate for a flat panel display, or the like. The "substrate" referred to herein is represented by a substrate 105 in the various exemplary embodiment drawings.

Independently operating the plurality of plasma chambers to provide reactive components to the common substrate processing region provides substantially decoupling adjustment of ion concentration versus free radical concentration within the common substrate processing region. In various embodiments, generating different types of plasma within the plurality of plasma chambers is accomplished by independently controlling the power and/or gas supply connected to the plurality of plasma chambers. Also, in some embodiments, the output of the plurality of plasma chambers can be arranged in an array of spaces in fluid communication with the substrate processing region. The outputs of the plurality of plasma chambers may be dispersed from each other and spaced sufficiently close to each other such that different reactive components of different types of plasma formed in the plurality of plasma chambers are supplied to the substrate processing region in a substantially uniform manner to The process of presenting a substantially uniform substrate within the substrate processing region.

1 shows the relationship between ion concentration and radical concentration achievable using a plurality of plasma chambers exposed to a common substrate processing region in accordance with an embodiment of the present invention. The first line 301 shows the variation in ion concentration versus radical concentration in the first plasma generated in the first plasma chamber fluidly connected to the common substrate processing region. In this example, the first plasma has a higher concentration of free radicals than the ion concentration. The second line 303 is shown in the second plasma chamber that is fluidly coupled to the common substrate processing region The variation of the ion concentration in the second plasma versus the concentration of the radical. In this example, the second plasma has a higher ion concentration than the free radical concentration. Therefore, the first plasma is generated to mainly supply the radical component to the substrate processing region, and the second plasma is generated to mainly supply the ion component to the substrate processing region.

By independently controlling the first and second plasma chambers, substantially any ion concentration versus radical concentration extending within the range between the first line 301 and the second line 303 can be achieved in the substrate processing region. For example, the second plasma chamber can be individually operated to supply a first ion to radical concentration ratio 305 within the substrate processing region. When used together, the first plasma chamber can be operated to increase the concentration of free radicals in the substrate processing region while the second plasma chamber is operated to maintain a substantially stable ion concentration in the substrate processing region, thereby A second ion-to-radical concentration ratio 307 that cannot be achieved using the first or second plasma chamber alone is generated within the substrate processing region. Similarly, when used together, the second plasma chamber can be operated to reduce ion concentration in the substrate processing region while the first plasma chamber is operated to maintain a substantially stable free radical concentration in the substrate processing region. Thereby, a third ion pair radical concentration ratio 309 which cannot be achieved by using the first or second plasma chamber alone is generated in the substrate processing region.

Further with respect to Figure 1, the first plasma chamber can be individually operated to supply a fourth ion pair radical concentration ratio 311 within the substrate processing region. When used together, the second plasma chamber can be operated to increase the ion concentration in the substrate processing region while the first plasma chamber is operated to maintain a substantially stable free radical concentration in the substrate processing region, thereby A fifth ion pair radical concentration ratio 313 that cannot be achieved using the first or second plasma chamber alone is generated in the substrate processing region. Similarly, when used together, the first plasma chamber can be operated to reduce the concentration of free radicals in the substrate processing region while the second plasma chamber is operated to maintain a substantially stable ion concentration in the substrate processing region. Thereby, a sixth ion pair radical concentration ratio 315 which cannot be achieved by using the first or second plasma chamber alone is generated in the substrate processing region.

Based on the foregoing, it will be appreciated that in one embodiment of the invention, a plurality of independently controlled plasma chambers are used to supply reactive components to a common substrate processing region to provide for inability to operate through a single plasma chamber. The ratio of ion to radical concentration. Based on the discussion in relation to Figure 1, it should be further observed that when multiple plasmas are to be When the reactive components are combined, the complex plasma having a significantly different ion to radical concentration ratio provides a broader range of ion to radical concentration ratios in the substrate processing region. A number of semiconductor substrate processing systems are disclosed herein that provide a spatial combination of reactive components from a plurality of independently controlled plasma chambers to produce a reaction in the substrate processing region that cannot be achieved with a single plasma chamber itself. a combination of sexual ingredients.

2A shows a semiconductor substrate processing system 200A in accordance with an embodiment of the present invention. System 200A includes a substrate support 107 defined to support substrate 105 exposed to processing region 106. System 200A also includes a first plasma chamber 101 that is defined to produce a first plasma 101A and to supply reactive component 108A of first plasma 101A to processing region 106 via an opening in first plasma chamber 101. . System 200A also includes a second plasma chamber 102 that is defined to produce a second plasma 102A and to supply reactive component 108B of second plasma 102A to processing region 106 via an opening in second plasma chamber 102. The first plasma chamber 101 and the second plasma chamber 102 are defined to be independently controlled.

More specifically, the first plasma chamber 101 is electrically connected to the first power source 103A. The first power source 103A is defined to supply the first power to the first plasma chamber 101. The first plasma chamber 101 is also fluidly coupled to a first process gas supply 104A, which is defined to supply a first process gas to the first plasma chamber 101. The first plasma chamber 101 is defined to apply a first power to the first process gas to produce a first plasma 101A within the first plasma chamber 101.

The second plasma chamber 102 is electrically connected to the second power source 103B. The second power source 103B is defined to supply a second power to the second plasma chamber 102. The second plasma chamber 102 is also fluidly coupled to a second process gas supply 104B, which is defined to supply a second process gas to the second plasma chamber 102. The second plasma chamber 102 is defined to apply a second power to the second process gas to produce a second plasma 102A within the second plasma chamber 102.

It will be appreciated that the first and second plasma chambers 101/102 can produce significantly different types of plasma 101A/102A depending on the power applied and the process gas used. In an embodiment, the first and second power sources 103A/103B are independent Control it. Also, in an embodiment, the first and second process gas supplies 104A/104B are independently controllable. Moreover, in another embodiment, the first and second power sources 103A/103B and the first and second process gas supplies 104A/104B can be independently controlled.

It should be understood that the independent control of the first and second process gas supplies 104A/104B may be related to one or more of a gas type/mixture, gas flow rate, gas temperature, and gas pressure other than substantially any other process gas related parameter. . It should also be appreciated that the independent control of the first and second power supplies 103A/103B may be related to one or both of radio frequency (RF) amplitude, RF frequency, voltage level, and current level of substantially any other power related parameter. More.

In one embodiment, the first power supplied by the first power source 103A to the first plasma chamber 101 is direct current (DC) power, RF power, or a combination of DC and RF power. Similarly, in an embodiment, the second power supplied by the second power source 103B to the second plasma chamber 102 is DC power, RF power, or a combination of DC and RF power. In one embodiment, the first power supplied by the first power source 103A to the first plasma chamber 101 is 2 megahertz (MHz), 27 MHz, 60 MHz, 400 kHz (kiloHertz, kHz), or The RF power of the combined frequency, and the second power supplied by the second power source 103B to the second plasma chamber 102 is RF power having a frequency of 2 MHz, 27 MHz, 60 MHz, 400 kHz, or a combination thereof. In one version of this embodiment, the frequencies of the first and second powers are different. However, in another version of this embodiment, if the process gases supplied to the first and second plasma chambers 101/102 allow for differences between the first and second plasmas 101A/102A, The frequency of the second power can be the same.

The type of power applied to the first and second plasma chambers 101/102 depends in part on the type of plasma chamber used. In some exemplary embodiments, each of the first and second plasma chambers 101/102 is a hollow cathode chamber, or an electron cyclotron resonance chamber, or a microwave drive chamber, or an inductive coupling chamber, or a capacitor Coupling chamber. And in an embodiment, the first and second plasma chambers 101/102 are the same type of plasma chamber. However, in another embodiment, the first and second plasma chambers 101/102 are different types of plasma chambers.

Also, it should be understood that in various embodiments, the first and second plasma chambers 101/102 can include different forms of power delivery members. The power delivery member is responsible for delivering power to the process gas within the first/second plasma chamber 101/102. For example, in one embodiment, the walls of the first and second plasma chambers 101/102 are electrically conductive and function as power delivery members. In this embodiment, the first and second plasma chambers 101/102 can be separated from each other by a dielectric material and a conductive shield to ensure that the power delivered to a plasma chamber 101/102 is not adversely affected by Received adjacent to the plasma chamber 101/102. 2E shows a variation of system 200A in which first and second plasma chambers 101/102 are separated by conductive shields 151 disposed between dielectric materials 150, in accordance with an embodiment of the present invention. In an embodiment, the conductive shield 151 is electrically connected to a reference ground potential.

2F-1 and 2F-2 illustrate another variation of the system 200A of FIG. 2A in which the power transfer members of the first and second plasma chambers 101/102 are configured to be disposed in accordance with an embodiment of the present invention. Electrodes 160 in the first and second plasma chambers. 2F-1 shows an exemplary embodiment in which electrode 160 is disposed on the sidewalls of first and second plasma chambers 101/102. 2F-2 shows an exemplary embodiment in which electrode 160 is disposed on the upper and lower surfaces within the interior of first and second plasma chambers 101/102. In this embodiment, the electrode 160 on the upper surface within the interior of the plasma chamber 101/102 includes a more or more porous hole defined as a penetrating electrode 160 for the first and second process gas supplies. The 104A/104B can be in fluid communication with the interior volumes of the first and second plasma chambers 101/102, respectively. Also, in this embodiment, the electrode 160 on the lower surface within the interior of the plasma chamber 101/102 includes a hole or holes that are defined to penetrate the electrode 160 to cause the first and second plasmas The reactive components of 101A/102A can pass to treatment zone 106, respectively. It should be understood that the configuration of electrodes 160 in Figures 2F-1 and 2F-2 is shown by way of example. In other embodiments, the electrode 160 can be disposed on any one or more surfaces within the plasma generating volume of the first/second plasma chamber 101/102.

2G shows another variation of the system 200A of FIG. 2A in which the power transfer members of the first and second plasma chambers 101/102 are implemented adjacent to the first and second plasmas, in accordance with an embodiment of the present invention. A coil 170 is provided in the chamber 101/102. It will be appreciated that the top arrangement of the coil 170 in Figure 2G is shown by way of example. In other embodiments, the coil 170 can be adjacent to any of the first/second plasma chambers 101/102 or More exterior surfaces are set. It will be appreciated that the different power delivery member embodiments of Figures 2A, 2E, 2F and 2G are shown by way of example. In other embodiments, the first and second plasma chambers 101/102 can implement different power delivery members than those illustrated in Figures 2A, 2E, 2F, and 2G.

In the foregoing case, it should be understood that the first and second plasma chambers 101/102 can be operated using different process gases and/or different powers to achieve that one of the plasmas provides a relatively high concentration of ions relative to free radicals, And another of the plasmas provides a state of relatively high concentration of free radicals relative to ions. Moreover, the first and second plasma chambers 101/102 are defined to distribute the reactive components 108A/108B of the first and second plasmas 101A/102A above the substrate support 107 in a substantially uniform manner. Processing area 106.

In one embodiment, the first and second plasma chambers 101/102 are defined to operate at an internal pressure of up to about 1 Torr (T). Also, in one embodiment, the processing region 106 operates in a pressure range extending from about 1 milliTorr (mT) to about 10 mT. The outlets of the first and second plasma chambers 101/102 are defined to provide and control the pressure drop between the interior of the first and second plasma chambers 101/102 and the processing region 106. And, if necessary, in one embodiment, the free radical component can be supplied from either of the first and second plasma chambers 101/102 in a cross-flow configuration or using a cross-flow in the processing region 106 to control The distribution of the etched product in the range of the tube substrate 105.

In an exemplary embodiment, system 200A is operated to reside in processing region 106 at a process gas production flow rate of about 1000 scc/sec (standard cubic centimeters per second) and about 10 milliseconds (ms) of reactive component 108A/108B. The pressure of the treatment zone 106 is about 10 mT in the case of time. It should be understood and appreciated that the above exemplary operating conditions represent one of the substantially unlimited operating conditions that can be achieved with system 200A. The above exemplary operating conditions do not represent or imply any limitation in the possible operating conditions of system 200A.

In one embodiment, the substrate holder 107 is defined to be movable in a direction 110 that is substantially perpendicular to the upper surface of the substrate 105 on which the substrate support 107 is supported, thereby allowing the processing gap distance 113 to be adjusted. The processing gap distance 113 extends perpendicularly to the upper surface of the substrate holder 107 and the first and second plasma chambers Between 101/102. In an embodiment, the substrate holder 107 can be moved in the direction 110 such that the process gap distance can be adjusted from about 2 cm to about 10 cm. In an embodiment, the substrate holder 107 is adjusted to provide a processing gap distance 113 of about 5 cm. In an alternative embodiment, the adjustment of the process gap distance 113 can be achieved by moving the first and second plasma chambers 101/102 relative to the substrate support 107 in the direction 110.

The adjustment of the process gap distance 113 provides for adjustment of the ion flux emitted by one or both of the first and second plasma chambers 101/102. In particular, the ion flux reaching the substrate 105 can be reduced by increasing the processing gap distance 113, and vice versa. In one embodiment, the process gas flow rate through the higher free radical supply plasma chamber (101/102) can be adjusted when the process gap distance 113 is adjusted to achieve an adjustment in ion flux at the substrate 105. Independent control of the free radical flux at substrate 105 is provided. In addition, it is to be understood that the treatment gap distance 113 is controlled in conjunction with the ions and radical fluxes emitted from the first and second plasma chambers to provide substantially uniform ion density and radical density at the substrate 105.

In one embodiment, the substrate holder 107 includes a biasing electrode 112 for generating an electric field to attract ions toward the substrate holder 107 and thereby toward the substrate 105 held on the substrate holder 107. Also, in one embodiment, the substrate support 107 includes a plurality of cooling passages 116 through which cooling fluid can flow during the plasma processing operation to maintain temperature control of the substrate 105. Also, in an embodiment, the substrate support 107 can include a plurality of top pins that are defined to raise and lower the substrate 105 relative to the substrate support 107. In one embodiment, the substrate support 107 is defined as an electrostatic chuck configured to create an electrostatic field for securely holding the substrate 105 on the substrate support 107 during a plasma processing operation.

In various embodiments, the first and second plasma chambers 101/102 are defined to operate in a simultaneous manner or in a pulsed manner. Operating the first and second plasma chambers 101/102 in a pulsed manner includes operating the first plasma chamber 101 or the second plasma chamber 102 in an alternating sequence at a given time. Specifically, in a case where the first and second plasma chambers 101/102 operate in a predetermined manner in a predetermined manner, the first plasma chamber 101 will operate first when the second plasma chamber 102 is idle. Time period, then the second plasma chamber Chamber 102 will operate for a second period of time when first plasma chamber 101 is idle.

Operating the first and second plasma chambers 101/102 in a pulsed manner can be used to prevent/limit poor communication between the first and second plasmas 101A/102A with respect to process gases and/or power. The poor communication between the prevention/first and second plasmas 101A/102A includes ensuring that the process gas/species of the first plasma 101A does not enter the second plasma chamber 102 and that the process gas of the second plasma 102A is/ The species does not enter the first plasma chamber 101. The prevention/bad communication between the first and second plasmas 101A/102A also includes ensuring that the power supplied to the first plasma chamber 101 does not flow to the second plasma 102A in the second plasma chamber 102, It is also ensured that the power supplied to the second plasma chamber 102 does not flow to the first plasma 101A in the first plasma chamber 101.

In embodiments in which the first and second plasma chambers 101/102 are operated in a simultaneous manner, the first and second plasma chambers 101/102 are defined to ensure that poor communication therebetween is prevented/restricted. For example, the respective openings of the first and second plasma chambers 101/102 exposed to the processing region 106 are sized to be sufficiently small and spaced far enough to avoid the first and second plasma chambers 101/102. Inter-connected with respect to process gas and/or power. Based on the foregoing, it should be understood that the first and second plasma chambers 101/102 may be associated with process gas flow rate, process gas pressure, power frequency, power amplitude, on/off duration, and operation during substrate plasma processing. One or more of the timings are controlled independently.

2B shows a semiconductor substrate processing system 200B in accordance with an embodiment of the present invention. System 200B is a variation of system 200A of Figure 2A. In particular, system 200B includes a baffle structure 109 disposed between first and second plasma chambers 101/102 for directing first and second plasma chambers 101/102 toward substrate support 107 extend. The baffle structure 109 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Also, in an embodiment, the baffle structure 109 is formed of a dielectric material to reduce power communication between the first and second plasma chambers 101/102. In one embodiment, the baffle structure 109 is defined to be movable in a direction 114 that is substantially perpendicular to the upper surface of the substrate 105 on which the substrate support 107 is supported.

2C shows a semiconductor substrate processing system 200C in accordance with an embodiment of the present invention. System 200C is a variation of system 200B of Figure 2B. in particular, The system 200C includes a discharge passage 111 formed between the first and second plasma chambers 101/102 to be supported from the processing region 106 toward the substrate 105 substantially perpendicular to the substrate holder 107. The direction of the surface extends away. In one embodiment, the exhaust passage 111 is open and unobstructed for gas to be expelled from the processing zone 106. However, in another embodiment, the baffle structure 109 is disposed within the discharge passage 111 between the first and second plasma chambers 101/102 for the first and second plasma chambers 101/102. Extending toward the substrate holder 107. The baffle structure 109 disposed within the exhaust passage 111 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Also, in one embodiment, the baffle structure 109 disposed within the exhaust passage 111 is formed of a dielectric material to reduce power communication between the first and second plasma chambers 101/102. Also, the baffle structure 109 is sized to be smaller than the discharge passage 111 for the exhaust flow to pass through the discharge passage 111 around the baffle structure 109.

In the exemplary embodiment of Figures 2B and 2C, the baffle structure 109 can be used to limit fluid and/or power communication between adjacent plasma chambers, such as 101, 102. In addition, the baffle structure 109 can be used to assist in establishing the uniformity of ions and radicals in the range of the substrate 105. As mentioned in relation to Figures 2B and 2C, the baffle structure 109 can be moved in a direction 114 that is substantially perpendicular to the substrate support 107. This movement of the baffle structure 109 in the direction 114 allows the distance 115 measured vertically between the baffle structure 119 and the substrate 105 to be adjusted.

In various embodiments, the distance 115 between the baffle structure 109 and the substrate 105 can be as high as 5 cm. It should be understood, however, that distance 115 is a function of, for example, other parameters of ions and radical fluxes emanating from first and second plasma chambers 101/102. In an exemplary embodiment, the distance 115 between the baffle structure 109 and the substrate 105 is about 2 cm. Moreover, although the baffle structure 109 shown in the exemplary embodiment of Figures 2B and 2D is rectangular in cross-section, it should be understood that the baffle structure 109 can assume other shapes, such as a rounded bottom, an angled bottom, and a tapered shape. The top, etc., to achieve a particular effect within the processing zone 106, such as controlling process gas conditions including crossflow and turbulence therein.

In some cases, free radical formation within the plasma is unavoidable when attempting to primarily generate ions in the plasma. In these cases, the main purpose is to achieve self-power When the slurry transports the ionic components, the transport of the free radical components from the generated plasma is more or less unavoidable. Furthermore, extracting ions from the plasma means that the opening between the ion source (i.e., plasma) and the processing region (e.g., processing region 106) is sufficiently large that the sheath does not inhibit plasma extraction and causes impact on the walls of the extraction medium. Low to prevent neutralization of ions. In one embodiment of the invention, the ion source region can be implemented as an energization exit region to provide auxiliary electron generation to enhance extraction of ions from the ion source. For example, in one embodiment, the exit region of the plasma chamber exposed to the processing region can be defined as a hollow cathode to enhance ion generation within the exit region itself and correspondingly enhance extraction of ions from the plasma chamber.

2D shows a variation of the second plasma chamber 102 having an energization exit region 225 to enhance ion extraction in accordance with an embodiment of the present invention. It should be understood, however, that one or both of the first and second plasma chambers 101/102 can be defined as having an energizable plasma outlet region 225 that is defined to provide auxiliary electron generation to increase ions. Extract. In an embodiment, the energizable plasma exit region 225 is defined as a hollow cathode. In one version of this embodiment, the exit region 225 is surrounded by an electrode 220 that can be powered by DC power, RF power, or a combination thereof. When the reactive component from the plasma 102A flows through the energizable plasma exit region 225, the power emitted by the electrode 220 will release rapid electrons in the exit region 225, which will thereby result in the flow of gas through the exit region 225. Further ionization, thereby enhancing extraction of ions from the plasma chamber 102. Additionally, the bias applied by the bias electrode 112 across the processing region 106 will be used to pull ions from the plasma 102A in the chamber 102 and from the exit region 225 toward the substrate 105.

FIG. 3A shows a vertical cross section of a semiconductor substrate processing system 400 in accordance with an embodiment of the present invention. System 400 includes a chamber 401 formed by a top configuration 401B, a bottom configuration 401C, and a sidewall 401A extending between the top configuration 401B and the bottom configuration 401C. The chamber 401 surrounds the processing region 106. In various embodiments, the sidewall 401A, top of the chamber, as long as the material of the chamber 401 is structurally capable of withstanding the pressure differential and its exposed temperature during plasma processing and is chemically compatible with the plasma processing environment. The configuration 401B and the bottom structure 401C can be formed of different materials such as stainless steel or aluminum as exemplified.

System 400 also includes a substrate support member 107 disposed within chamber 401 and defined to support substrate 105 exposed to processing region 106. The substrate support 107 is defined to clamp the substrate 105 thereon during the plasma processing operation on the substrate 105. In the exemplary embodiment of FIG. 3A, the substrate support 107 is held by a cantilever 405 that is secured to the sidewall 401A of the chamber 401. However, in other embodiments, the substrate holder 107 can be secured to the bottom configuration 401C of the chamber 401 or to another member disposed within the chamber 401. In various embodiments, as long as the material of the substrate support member 107 is structurally capable of withstanding the pressure differential and its exposed temperature during plasma processing and is chemically compatible with the plasma processing environment, the substrate support member 303 can be Different materials such as exemplified stainless steel, aluminum, or ceramic are formed.

In one embodiment, the substrate holder 107 includes a biasing electrode 112 for generating an electric field to attract ions toward the substrate holder 107 and thereby toward the substrate 105 held on the substrate holder 107. Also, in one embodiment, the substrate support 107 includes a plurality of cooling passages 116 through which the coolant can flow during the plasma processing operation to maintain temperature control of the substrate 105. And in an embodiment, the substrate support 107 can include a plurality of top pins 411 that are defined to raise and lower the substrate 105 in relation to the substrate support 107. In one embodiment, the door assembly 413 is disposed within the sidewall 401A of the chamber to allow the substrate 105 to be inserted into/removed from the chamber 401. Moreover, in one embodiment, the substrate support 107 is defined as an electrostatic chuck configured to create an electrostatic field for securely holding the substrate 105 on the substrate support 107 during a plasma processing operation.

The system 400 further includes a top plate assembly 407 disposed in the chamber 401 above and spaced apart from the substrate support member 107 to be disposed above and spaced apart from the substrate 105 when the substrate 105 is placed on the substrate support member 107. The substrate processing region 106 is present between the top plate assembly 407 and the substrate support 107 to be present above the substrate 105 when the substrate 105 is placed on the substrate support 107. As previously mentioned, the substrate support 107 can be moved in the direction 110 such that the processing gap distance as measured between the top plate assembly 407 and the substrate support 107 perpendicularly across the substrate processing region 106 can extend from about 2 cm to about Adjust within 10cm. Also, in one embodiment, the vertical position of the substrate holder 107 relative to the top plate assembly 407 (or vice versa) The settings can be adjusted between performing a plasma processing operation or between plasma processing operations.

The top plate assembly 407 has a lower surface that exposes the processing region 106 and is opposite the upper surface of the substrate support 107. The top plate assembly 407 includes a first plurality of plasma mashes that are coupled to supply reactive components of the first plasma 101A to the processing region 106. More specifically, in the embodiment of FIG. 3A, the first plurality of plasma microchambers 101 are disposed across the upper surface of the top plate assembly 407, and the first plurality of plasma rafts and the first plurality of plasma microcavities The individual openings of chamber 101 are in fluid communication. Accordingly, the first plurality of plasma crucibles are configured to position the opening of the first plurality of plasma microchambers 101 in fluid communication with the processing region 106. It will be appreciated that as previously discussed in relation to Figures 1 through 2G, each of the first plurality of plasma microchambers corresponds to the first plasma chamber 101.

The top plate assembly 407 also includes a second plurality of plasma mashes that are coupled to supply the reactive components of the second plasma 102A to the processing region 106. More specifically, in the embodiment of FIG. 3A, the second plurality of plasma microchambers 102 are disposed across the upper surface of the top plate assembly 407, and the second plurality of plasma tethers and the second plurality of plasma microcavities The individual openings of chamber 102 are in fluid communication. Accordingly, the second plurality of plasma crucibles are configured to position the opening of the second plurality of plasma microchambers 102 in fluid communication with the processing region 106. It will be appreciated that as previously discussed in relation to Figures 1 through 2G, each of the second plurality of plasma microchambers corresponds to the second plasma chamber 102.

Each of the first plurality of plasma microchambers 101 is defined to produce a first plasma 101A and to supply a reactive component 108A of the first plasma 101A to a first plurality of electricity defined along a lower surface of the top plate assembly 407. One or more of pulp. Similarly, each of the second plurality of plasma microchambers 102 is defined to produce a second plasma 102A and to supply a reactive component 108B of the second plasma 102A to a portion defined along the lower surface of the top plate assembly 407. One or more of the second plurality of plasma pulps.

Figure 3B shows a horizontal cross-sectional view A-A of Figure 3A in accordance with an embodiment of the present invention. As shown in FIG. 3B, the first and second plasma microchambers 101/102 are interspersed between each other across the top plate assembly 407 such that the first plurality of plasmas traverse the top plate assembly in a substantially uniform manner The lower surface of 407 is interspersed between the second plurality of plasma crucibles. In an exemplary embodiment, the first and second plasma microchambers 101/102 are defined as having an inner diameter ranging from about 1 cm to about 2 cm. and, In an exemplary embodiment, the total number of first and second plasma microchambers 101/102 is about 100. In yet another exemplary embodiment, the total number of first and second plasma microchambers 101/102 is in the range of from about 40 to about 60 and spans the first surface of the lower surface of the top plate assembly 407. The total number of the second plurality of plasma crucibles is about 100.

It will be appreciated that the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 can vary between different embodiments. 3C shows a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is reduced, in accordance with an embodiment of the present invention. 3D shows a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is increased, in accordance with an embodiment of the present invention. 3E shows a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is unequal, in accordance with an embodiment of the present invention.

It will be appreciated that the exemplary embodiments described above for the number of first and second plasma microchambers 101/102 and/or the number of plasma imperfections in the lower surface of the top plate assembly 407 are used to help illustrate the invention and are not representative. The invention is in any way limited. In other embodiments, the configuration/number of plasmas in substantially any of the first and second plasma microchambers 101/102 and/or the lower surface of the top plate assembly 407 can be defined and arranged as needed to A suitable mixture of free radicals and ionic components is provided within the processing zone 106 to achieve the desired plasma processing results on the substrate 105.

The first and second plasma microchambers 101/102 are defined to operate in a simultaneous manner or in a pulsed manner. Operating the first and second plasma microchambers 101/102 in a pulsed manner includes operating the first plurality of plasma microchambers 101 or the second plurality of plasma microchambers 102 in an alternating sequence at a given time. In one embodiment, each of the first plurality of plasma microchambers 101 is a hollow cathode chamber, or an electron cyclotron resonance chamber, or a microwave drive chamber, or an inductive coupling chamber, or a capacitive coupling chamber. And in an embodiment, each of the second plurality of plasma microchambers 102 is a hollow cathode chamber, or an electron cyclotron resonance chamber, or a microwave drive chamber, or an inductive coupling chamber, or a capacitive coupling chamber .

In an exemplary embodiment, a plasma microchamber (101 or 102) that is primarily responsible for supplying free radical components to the processing region 106 is defined as a microwave driven plasma microcavity. room. Moreover, in an exemplary embodiment, the plasma microchamber (101 or 102) that is primarily responsible for supplying ionic components to the processing region 106 is defined as a hollow cathode plasma microchamber, an electron cyclotron resonance plasma microchamber, Capacitively coupled plasma microchamber, or a resonant discharge plasma microchamber. In a particular exemplary embodiment, each of the first plurality of plasma microchambers 101 is defined as an inductively coupled plasma microchamber 101 that is primarily responsible for supplying free radical components to the processing region 106. Also, in this particular exemplary embodiment, each of the second plurality of plasma microchambers 102 is defined as a capacitively coupled plasma microchamber 102 that is primarily responsible for supplying ion components to the processing region 106.

It is to be understood that the exemplary embodiments described above for the first and second plasma microchambers 101/102 are intended to aid in the description of the invention and are not intended to limit the invention in any respect. In other embodiments, the first and second plasma microchambers 101/102 can be defined as a combination of virtually any type of plasma microchamber, plasma microchamber, as long as the first and the first The two plasma microchambers 101/102 are defined to supply a reactive component of the type that is primarily responsible for the supply to the processing zone 106 to achieve the desired plasma processing results on the substrate 105.

The system 400 further includes a first power source 103A that is defined to supply a first power to the first plurality of plasma microchambers 101. System 400 also includes a first process gas supply 104A that is defined to supply a first process gas to first plurality of plasma microchambers 101. System 400 also includes a second power source 103B that is defined to supply a second power to second plurality of plasma microchambers 102. System 400 also includes a second process gas supply 104B that is defined to supply a second process gas to a second plurality of plasma microchambers 102. In an embodiment, the first and second power sources 103A/103B are independently controllable. In an embodiment, the first and second process gas supplies 104A/104B are independently controllable. In one embodiment, the first and second power sources 103A/103B and the first and second process gas supplies 104A/104B are independently controllable. In one embodiment, the first power supplied to the first plurality of plasma microchambers 101 is DC power, RF power, or a combination of DC and RF power. Also, in one embodiment, the second power supplied to the second plurality of plasma microchambers 102 is DC power, RF power, or a combination of DC and RF power.

Regarding the supply of RF work by either of the first and second power sources 103A/103B Rate, it should be understood that the supplied RF power can be independently controlled in relation to the RF power frequency and/or amplitude. It should be understood that each of the first and second power sources 103A/103B includes an individual matching circuit through which the RF power is transmitted to ensure that the RF power is efficiently transmitted to the first and second plurality of powers, respectively. Pulp microchamber 101/102. In one embodiment, the first power supplied by the first power source 103A to the first plurality of plasma microchambers 101 is RF power having a frequency of 2 MHz, 27 MHz, 60 MHz, or 400 kHz, and is supplied by the second power source 103B to The second power of the second plurality of plasma microchambers 102 is RF power having a frequency of 2 MHz, 27 MHz, 60 MHz, or 400 kHz. In this embodiment, the first and second powers have at least one different frequency.

During operation of system 400, the process gas system supplied by first and second process gas supplies 104A/104B is converted to first in each of first and second plurality of plasma microchambers 101/102, respectively. And a second plasma 101A/102A. The reactive species in the first and second plasmas 101A/102A move from the first and second plurality of plasma microchambers 101/102 to the substrate processing region 106 above the substrate support 107 (ie, when the substrate 105 is attached to When the substrate holder 107 is on, it moves to the substrate 105).

In one embodiment, the process gas used flows through the peripheral vent 427 and exits by the discharge pump 431 as it enters the substrate processing region 106 from the first and second plurality of plasma microchambers 101/102. 429 pulled out. In one embodiment, flow throttling device 433 is configured to control the flow rate of process gas from substrate processing region 106. In one embodiment, the flow restriction device 433 is defined as an annular structure that is movable toward and away from the surrounding vent 427 as indicated by arrow 435.

It will be appreciated that system 400 utilizes a large number of another type of small plasma source (i.e., the first plurality of plasma micros) interspersed between a large number of small plasma sources of one type (i.e., second plurality of plasma microchambers 102). The chamber 101) delivers the bonded reactive component flux substrate 105 in a substantially uniform manner from each type of plasma source. In one embodiment, one type of plasma source produces a greater density of free radical components relative to the ionic component, and another type of plasma source produces a greater density of ionic components relative to the free radical component, thereby processing Independent control of ions and free radicals is provided within region 106.

4A shows another substrate plasma treatment in accordance with an embodiment of the present invention. System 500. System 500 is substantially identical to system 400 of Figure 3A in terms of chamber 401, substrate support 107, ambient vent 427, flow restriction 433, discharge port 429, and discharge pump 431. However, system 500 includes variations on first and second plurality of plasma microchambers 101/102 disposed across top plate assembly 407 as previously discussed in relation to FIG. 3A. In particular, system 500 includes a large first plasma chamber 501 instead of including a plurality of first and second plasma microchambers 101/102 to supply their respective reactive components to the electricity in the top plate assembly 407. The pulp, the first plasma chamber 501 is defined to produce a first plasma 101A and supply the reactive components of the first plasma 101A to each of the first plurality of plasmas in the top plate assembly 407. Similarly, system 500 includes a large second plasma chamber 502 defined to produce a second plasma 102A and supply the reactive components of second plasma 102A to a second plurality of plasmas in top plate assembly 407. One.

In one embodiment, system 500 includes a single instance of first plasma chamber 501 to supply reactive components of first plasma 101A to processing region 106. Also, in this embodiment, system 500 includes a single instance of second plasma chamber 502 to supply reactive components of second plasma 102A to processing region 106. In other embodiments, system 500 can include more than one instance of first plasma chamber 501 to supply reactive components of first plasma 101A to processing region 106, wherein each of first plasma chambers 501 The example is fluidly coupled to a plurality of plasma impellers within the top plate assembly 407. Similarly, in other embodiments, system 500 can include more than one instance of second plasma chamber 502 to supply reactive components of second plasma 102A to processing region 106, wherein the second plasma chamber Each of the examples of 502 is fluidly coupled to a plurality of plasma cartridges within the top plate assembly 407.

It should also be appreciated that the characteristics and operating conditions previously discussed with respect to the first plasma chamber 101 of Figures 2A-2D are equally applicable to the first plasma chamber 501. It should also be appreciated that the characteristics and operating conditions previously discussed with respect to the second plasma chamber 102 of Figures 2A-2D are equally applicable to the second plasma chamber 502.

The plasma crucible fluidly coupled to the top plate assembly 407 of the first plasma chamber 501 is interspersed in a substantially even manner for the plasma imperfections that are fluidly coupled to the top plate assembly 407 of the second plasma chamber 502. 4B shows an embodiment in accordance with the present invention. The horizontal cross-sectional view B-B is indicated in Figure 4A. As shown in FIG. 4B, the outputs 501A/502A of the first and second plasma chambers 501/502 are interspersed between each other across the top plate assembly 407 in a substantially average manner.

It will be appreciated that the spacing between the plasma rafts connecting the first and second plasma chambers 501/502 across the top plate assembly 407 can vary between different embodiments. 4C shows a variation of the horizontal cross-sectional view of FIG. 4B in accordance with an embodiment of the present invention in which the spacing between the plasma rafts connecting the first and second plasma chambers 501/502 across the top plate assembly 407 is reduced. . 4D shows a variation of the horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma rafts connecting the first and second plasma chambers 501/502 across the top plate assembly 407 is increased in accordance with an embodiment of the present invention. . 4E shows a variation of the horizontal cross-sectional view of FIG. 4B in accordance with an embodiment of the present invention, wherein the spacing between the plasma rafts connecting the first and second plasma chambers 501/502 across the top plate assembly 407 is not equal.

In one embodiment, the first plasma chamber 501 is primarily responsible for supplying free radical components to the processing region 106, and the second plasma chamber 502 is primarily responsible for supplying ionic components to the processing region 106. In this embodiment, the large plasma generation volume of the first plasma chamber 501 is used to supply a plurality of free radical component distributions within the top plate assembly 407. Also, in this embodiment, the large plasma generation volume of the second plasma chamber 502 is used to supply a plurality of ionic component distributions within the top plate assembly 407. In this embodiment, the plurality of free radicals and ion distribution lanthanides are interspersed with one another to provide a substantially uniform free radical/ion mixture within the processing zone 106.

System 500 also includes a first power source 103A defined to supply power to first plasma chamber 501, and a first process gas supplier 104A defined to supply process gas to first plasma chamber 501. Also, system 500 includes a second power source 103B defined to supply power to second plasma chamber 502, and a second process gas supplier 104B defined to supply process gas to second plasma chamber 502. As with system 400, in system 500, first and second power supplies 103A/103B can be independently controlled, or first and second process gas supplies 104A/104B can be independently controlled, or first and second The power source 103A/103B and the first and second process gas supplies 104A/104B can be independently controlled. Moreover, in an embodiment, system 500 The first and second plasma chambers 501/502 are defined to operate in a simultaneous manner or in a pulsed manner. When operated in a pulsed manner, the first plasma chamber 501 or the second plasma chamber 502 is operated at a given time, and the first and second plasma chambers 501/502 are operated in an alternating sequence. .

FIG. 5A shows another substrate plasma processing system 600 in accordance with an embodiment of the present invention. System 600 is substantially identical to system 400 of Figure 3A in terms of chamber 401 and substrate support 107. However, system 600 replaces top plate assembly 407 previously discussed in relation to FIG. 3A with top plate assembly 601, which includes a first set of plasma microchambers 605 and a second set of plasma microcavities formed in exhaust passage 607. Room 603.

System 600 includes a chamber 401 having a top configuration 401B, a bottom configuration 401C, and a sidewall 401A extending between the top and bottom configurations 401B/401C. The chamber 401 also includes a processing region 106. The substrate support 107 is disposed within the chamber 401 and has a top surface defined to support the substrate 105 exposed to the processing region 106. The top plate assembly 601 is disposed within the chamber 401 above the substrate support 107. The top plate assembly has a lower surface that is exposed to the processing region 106 and opposite the top surface of the substrate support 107.

The top plate assembly 601 includes a first set of plasma microchambers 605, each formed in a lower surface of the top plate assembly 601. The top plate assembly 601 also includes a first gas supply passage network 611 that is formed to flow a first process gas from the first process gas supply 104A to each of the first set of plasma microchambers 605. The supply of the first process gas to the first gas supply channel network 611 is indicated by line 611A in Figure 5A. Each of the first set of plasma microchambers 605 is coupled to receive power from the first power source 103A and is defined to use the received power to convert the first process gas into a first charge that is exposed to the processing region 106. Pulp. The supply of the first power to the first set of plasma microchambers 605 is also indicated by line 611A in Figure 5A.

The first set of power delivery members 615 are respectively disposed within the top plate assembly 601 adjacent the first set of plasma microchambers 605. Each of the first set of power delivery members 615 is coupled to receive a first power from a first power source 103A and to supply a first power to an associated one of the first set of plasma microchambers 605. In an embodiment, each of the first set of power delivery members 615 is defined as a coil that is formed to surround the first One of the set of plasma microchambers 605 is given. However, it should be understood that in other embodiments, the first set of power delivery members 615 can be defined as being external to the coil. For example, in one embodiment, each of the first set of power delivery members 615 is defined as one or more electrodes that are configured and arranged to deliver a first power to a first set of plasma micro The chamber 605 is associated with it.

The top plate assembly 601 also includes a set of exhaust passages 607 formed through the lower surface of the top plate assembly 601 for removal of exhaust gases from the processing region 106. Each of the exhaust passages 607 is fluidly coupled to an exhaust fluid delivery system 607A, such as a passage, a line, a plenum, and the like, which is thus fluidly coupled to the discharge pump 619. When operated, the discharge pump 619 applies suction through the discharge fluid delivery system 607A to the set of discharge passages 607 to remove process gases from the treatment zone 106. As indicated by arrow 617, the process gas flowing into the processing zone 106 via the first set of plasma microchambers 605 is drawn toward and into the exhaust channel 607.

The second set of plasma microchambers 603 are each formed inside the group of discharge channels 607. The second gas supply channel network 609 is formed such that the second process gas flows from the second process gas supply 104B to each of the second set of plasma microchambers 603. The supply of the second process gas to the second gas supply channel network 609 is indicated by line 609A in Figure 5A. Each of the second set of plasma microchambers 603 is coupled to receive power from the second power source 103B and is defined to use the received power to convert the second process gas into a second charge that is exposed to the processing region 106. Pulp. The supply of the second power to the second set of plasma microchambers 603 is also indicated by line 609A in Figure 5A.

The second set of power transfer members 613 are respectively disposed in the top plate assembly 601 and adjacent to the second set of plasma microchambers 603. Each of the second set of power delivery members 613 is coupled to receive a second power from the second power source 103B and to supply a second power to the associated one of the second set of plasma microchambers 603. In one embodiment, each of the second set of power delivery members 613 is defined as a coil that is formed to surround a given one of the second set of plasma microchambers 603. However, it should be understood that in other embodiments, the second set of power delivery members 613 can be defined as a form other than a coil. For example, in one embodiment, each of the second set of power delivery members 613 is defined as one or more electrodes configured and arranged to deliver a second power to the second set The plasma microchamber 603 is associated with it.

The electrode 112 within the substrate support 107 is defined to apply a biasing across the processing region 106 between the substrate support 107 and the lower surface of the top plate assembly 601. The process gas system flowing through the second gas supply passage network 609 to the second set of plasma microchambers 603 (i.e., into the exhaust passage 607) is drawn away from the processing region 106 and does not enter the processing region 106. Therefore, since the second set of plasma microchambers 603 are formed in the discharge passage 607, the radicals formed in the second set of plasma microchambers 603 will follow the exhaust gas flow path through the discharge passage 607. However, ions formed in the second set of plasma microchambers 603 will be pulled into the processing region 106 by the bias applied by the electrodes 112 across the processing region 106. In this manner, the second set of plasma microchambers 603 can function as a substantially pure ion source for the processing zone 106.

It will be appreciated that the first set of plasma microchambers 605 are interspersed with a second set of plasma microchambers 603 across the lower surface of the top plate assembly 601 in a substantially even manner. In this manner, the reactive radical components from the first set of plasma microchambers 605 can be substantially uniformly distributed from the second set of plasma microchambers 603 in the processing region 106 prior to reaching the substrate 105. Ion components are mixed. Figure 5B shows a horizontal cross-sectional view C-C of Figure 5A, in accordance with an embodiment of the present invention. As shown in FIG. 5B, the first and second sets of plasma microchambers 605/603 are distributed across the lower surface of the top plate assembly 601 in a substantially average manner.

It will be appreciated that the distance between the first and second sets of plasma microchambers 605/603 across the lower surface of the top plate assembly 601 can vary between different embodiments. 5C shows a variation of the horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers 605/603 across the lower surface of the top plate assembly 601 is reduced, in accordance with an embodiment of the present invention. . Figure 5D shows a variation of the horizontal cross-sectional view of Figure 5B in which the spacing between the first and second sets of plasma microchambers 605/603 across the lower surface of the top plate assembly 601 is increased, in accordance with an embodiment of the present invention. . Figure 5E shows a variation of the horizontal cross-sectional view of Figure 5B in accordance with an embodiment of the present invention, wherein the spacing between the first and second sets of plasma microchambers 605/603 across the lower surface of the top plate assembly 601 is not equal.

Like the embodiments of Figures 2A-2G, 3A-3E, 4A-4E, in Figures 5A-5E In an embodiment, the first and second power sources 103A/103B and the first and second process gas supplies 104A/104B can be controlled in a variety of ways. In an embodiment, the first and second power sources 103A/103B are independently controllable. In an embodiment, the first and second process gas supplies 104A/104B are independently controllable. In still another embodiment, the first and second power sources 103A/103B and the first and second process gas supplies 104A/104B are independently controllable. In the following, it should be understood that the first and second sets of plasma microchambers 605/603 are defined to operate in a simultaneous manner or in a pulsed manner. When operated in a pulsed manner, the first set of plasma microchambers 605 or the second set of plasma microchambers 603 are operated at a given time, and the first and second sets of plasma microchambers 605/603 are Operate in an alternating sequence.

In the case of the embodiment of Figure 5A, it will be appreciated that the drive member that allows for, for example, bipolar diffusion of plasma to escape from its generating region and the reverse flow of the process gas allow free radicals to escape into the plasma region. The drive parts are opposite. Increasing the top pumping to the ion source (i.e., to the second set of plasma microchambers 603) promotes more efficient ion extraction (wider openings) and larger ion/neutral flux ratios from the plasma source itself. In addition, it is to be understood that in an embodiment of the chamber 401 of FIG. 5A, the peripheral vent 427, the flow restriction 433, the discharge port 429, and the discharge pump 431 as previously described with respect to FIGS. 3A and 4A can be further configured. To achieve a peripheral flow outside the flow through the top of the discharge passage 607.

In various embodiments disclosed herein, different ion and radical plasma sources can be controlled with respect to gas flow, gas pressure, power frequency, power amplitude, on-duration, off-duration, and timing. Also, different types of plasma sources can be pulsed to mitigate communication between adjacent plasma sources. Two-phase isoelectric plasma source types can also be operated with different gas mixtures to achieve higher ion flux from one plasma source and higher free radical flux from another plasma source. In one embodiment, where there is an array of mixed ion and radical plasma sources, each plasma source can be connected to its own independently controlled power and gas supply. And, in another embodiment, all of the ion plasma sources in the hybrid array can be connected to a common gas supply and a common power source, and all of the free radical plasma sources in the hybrid array can be connected to another gas supply. The supplier and another common power source.

In one embodiment, system 600 of FIG. 5A represents a semiconductor substrate processing system having a board assembly 601 having a processing side surface exposed to a plasma processing region 106. The plate assembly 601 includes a discharge passage 607 formed through the treated side surface of the plate assembly 601 for removing exhaust gases from the plasma processing region 106. A plasma microchamber 603 is formed inside the discharge passage. The gas supply passage 609 is formed through the plate assembly 601 to allow the process gas to flow to the plasma microchamber 603 in the discharge passage 607. A power delivery member 613 is formed in the plate assembly 601 to transfer power to the region of the plasma microchamber 603, and to convert the process gas into a plasma within the plasma microchamber 603 in the discharge passage 607.

In one embodiment, the power supplied to power delivery member 613 is DC power, RF power, or a combination of DC and R power. In an embodiment, the power supplied to the power transfer member 613 is RF power having a frequency of 2 MHz, 27 MHz, 60 MHz, or 100 kHz. In one embodiment, power delivery member 613 is defined as a coil formed within plate assembly 601 that surrounds plasma microchamber 603 in discharge passage 607.

System 600 also includes an electrode 112 disposed outside of plate assembly 601 that, when energized, causes ions to be drawn into plasma processing region 106 from plasma microchamber 603 in discharge passage 607. In one embodiment, the electrode 112 is disposed within the substrate support 107, and the substrate support 107 is configured to support the substrate 105 exposing the plasma processing region 106. Also, in one embodiment, the exhaust passage 607 is defined to remove gas from the processing region 106 toward a direction that is substantially perpendicular and away from the surface of the substrate support 107 on which the substrate 105 is supported.

6 shows a flow chart of a method of processing a semiconductor substrate in accordance with an embodiment of the present invention. The method includes an operation 701 for placing the substrate 105 on a substrate support 107 that is exposed to the processing region 106. The method also includes an operation 703 for generating a first plasma 101A of the first plasma type. The method also includes an operation 705 for producing a second plasma 102A of a second plasma type different from the first plasma type. The method also includes an operation 707 for supplying reactive components 108A/108B of both the first and second plasmas 101A/102A to the processing region 106 for processing of the substrate 105.

The method also includes the operation of using the first power and first process gas to produce the first plasma 101A and using the second power and the second process gas to produce the second plasma 102A. In one embodiment, the method includes independently controlling the operation of the first and second powers, or the first and second process gases, or the first and second powers, and the first and second process gases. Also, in an embodiment, the first power is DC power, RF power, or a combination of DC and RF power, and the second power is DC power, RF power, or a combination of DC and RF power. In an exemplary embodiment, the first power is RF power having a first frequency of 2 MHz, 27 MHz, 60 MHz, or 100 kHz, and the second power is RF power having a second frequency of 2 MHz, 27 MHz, 60 MHz, or 100 kHz, Wherein the second frequency is different from the first frequency.

In this method, the first plasma 101A is formed to have a first ratio of ion density to radical density, and the second plasma 102A is generated to have a second ratio of ion density to radical density. The second ratio of ion density to radical density in the second plasma 102A is different from the first ratio of ion density to radical density in the first plasma 101A. In this method, reactive components from both the first and second plasmas 101A/102A are supplied in a substantially uniform manner throughout the processing region 106 exposed to the substrate 105. Moreover, in various embodiments, the reactive components from the first and second plasmas 101A/102A are generated and supplied in a simultaneous manner or in a pulsed manner. The generation and supply of the first and second plasmas 101A/102A by the pulse method include the reactive components of the first plasma 101A or the second plasma 102A which are generated and supplied in an alternating sequence at a given time.

The method can also include the operation of generating auxiliary electrons to add ions from one or both of the first and second plasmas 101A/102A to the processing region 106, as described in relation to Figure 2D. Moreover, the method can include the operation of applying a bias across the processing region 106 from the substrate support 107 to attract ions toward the substrate 105 from one or both of the first and second plasmas 101A/102A, such as with respect to the electrode 112. The operation is described here.

Moreover, in an embodiment, the method can include an operation of providing a baffle structure 109 between the first crucible and the second crucible, the reactive component of the first plasma 101A being supplied to the processing region 106 via the first crucible And the reactive component of the second plasma 102A It is supplied to the processing area 106 via the second volume. In this embodiment, the method can also include the operation of controlling the position of the baffle structure 109 relative to the substrate support 107 to limit the passage of reactive components of the first and second 101A/102A into the processing region 106. One or both of fluid communication and power communication between the first and second turns.

7 shows a flow chart of a method of processing a semiconductor substrate in accordance with an embodiment of the present invention. The method includes an operation 801 for placing the substrate 105 on a substrate support 107 that is exposed to the processing region 106. The method also includes an operation 803 for operating a first set of plasma microchambers 605 exposed to the processing region 106, whereby each of the first set of plasma microchambers 605 produces a first plasma and supplies the first A reactive component of the plasma is applied to the processing zone 106. The first set of plasma microchambers 605 are positioned above the processing region 106 opposite the substrate support 107. The method also includes an operation 805 for operating a second set of plasma microchambers 603 exposed to the processing region 106, whereby each of the second set of plasma microchambers 603 produces a second plasma and supplies The reactive components of the two plasmas are directed to the treatment zone 106. The second plasma is different from the first plasma. Moreover, the second set of plasma microchambers 603 are positioned above the processing region 106, opposite the substrate support 107, and are interspersed between the first set of plasma microchambers 605 in a substantially uniform manner.

The method further includes the steps of: supplying a first power to the first set of plasma microchambers 605, supplying a first process gas to the first set of plasma microchambers 605, and supplying a second power to the second set of plasma microcavities The chamber 603 supplies a second process gas to the second set of plasma microchambers 603. In various embodiments, the method includes independently controlling the operation of the first and second powers, or the first and second process gases, or the first and second powers, and the first and second process gases. In an embodiment, the first power is DC power, RF power, or a combination of DC and RF power, and the second power is DC power, RF power, or a combination of DC and RF power. In an exemplary embodiment, the first power is RF power having a first frequency of 2 MHz, 27 MHz, 60 MHz, or 100 kHz, and the second power is RF power having a second frequency of 2 MHz, 27 MHz, 60 MHz, or 100 kHz, Wherein the second frequency is different from the first frequency.

The method further includes the operation of removing exhaust gas from the processing zone 106 via a set of exhaust channels 607. The set of exhaust channels 607 are defined as being substantially perpendicular and away from the surface of the substrate support member 107 on which the substrate 105 is supported, Processing zone 106 removes gas. In one embodiment, the second set of plasma microchambers 603 are defined inside the set of exhaust passages 607, respectively.

The method includes operating a first set of plasma microchambers 605 to produce a first plasma to have a first ratio of ion density to radical density, and operating a second set of plasma microchambers 603 to produce a second plasma The second ratio of ion density to radical density is different, and the second ratio of ion density to radical density in the second plasma is different from the first ratio of ion density to radical density in the first plasma. Moreover, in the embodiment in which the second set of plasma microchambers 603 are respectively defined inside the set of exhaust channels 607, the first plasma has a radical density higher than the ion density, and the second plasma has a higher than free radicals. The ion density of the density.

In one embodiment, the method includes operating the first and second sets of plasma microchambers 605/603 in a simultaneous manner. In another embodiment, the first and second plasma microchambers 605/603 are operated in a pulsed manner, wherein the first set of plasma microchambers 605 or the second set of plasma microchambers 603 are given Time operates, and wherein the first and second sets of plasma microchambers 605/603 operate in an alternating sequence. Additionally, the method can include the operation of applying a bias across the processing region 106 from the substrate support member 107 for first and second plasmas generated in the first and second sets of plasma microchambers 605/603, respectively. One or both attract ions toward the substrate 105, as discussed herein with respect to the electrode 112.

While the invention has been described in terms of several embodiments, it will be understood that The present invention includes all such variations, additions, permutations and equivalents falling within the true spirit and scope of the invention.

101‧‧‧First plasma chamber

101A‧‧‧First plasma

102‧‧‧Second plasma chamber

102A‧‧‧Second plasma

103A‧‧‧First power supply

103B‧‧‧second power supply

104A‧‧‧First Process Gas Supply

104B‧‧‧Second process gas supply

105‧‧‧Substrate

106‧‧‧Processing area

107‧‧‧Substrate support

108A‧‧‧Reactive ingredients

108B‧‧‧Reactive ingredients

109‧‧‧Baffle structure

110‧‧‧ Direction

111‧‧‧Drainage channel

112‧‧‧ bias electrode

113‧‧‧Handling gap distance

114‧‧‧ Direction

115‧‧‧ distance

116‧‧‧Cooling channel

150‧‧‧ dielectric materials

151‧‧‧ Conductive shielding

160‧‧‧electrode

170‧‧‧ coil

200A‧‧‧Semiconductor substrate processing system

200B‧‧‧Semiconductor substrate processing system

200C‧‧‧Semiconductor substrate processing system

220‧‧‧electrode

225‧‧‧Export area

301‧‧‧ first line

303‧‧‧ second line

305‧‧‧First ion to free radical concentration ratio

307‧‧‧Second ion pair radical concentration ratio

309‧‧‧ Third ion to free radical concentration ratio

311‧‧‧ fourth ion to free radical concentration ratio

313‧‧‧ fifth ion to free radical concentration ratio

315‧‧‧ sixth ion to free radical concentration ratio

400‧‧‧Semiconductor substrate processing system

401‧‧‧ chamber

401A‧‧‧ side wall

401B‧‧‧ top structure

401C‧‧‧ bottom structure

405‧‧‧cantilever

407‧‧‧ top plate assembly

411‧‧‧pinning

413‧‧‧door components

427‧‧‧ surrounding vents

431‧‧‧Draining pump

433‧‧‧Flow throttling device

435‧‧‧ arrow

500‧‧‧ system

501‧‧‧First plasma chamber

501A‧‧‧ output

502‧‧‧Second plasma chamber

502A‧‧‧ output

600‧‧‧ system

601‧‧‧ top plate assembly

603‧‧‧Second plasma microchamber

605‧‧‧The first group of plasma micro chambers

607‧‧‧Drainage channel

607A‧‧‧Draining fluid delivery system

609‧‧‧Second gas supply channel network

609A‧‧‧Lines

611‧‧‧First gas supply channel network

611A‧‧‧Lines

613‧‧‧Second set of power transmission components

615‧‧‧First set of power delivery components

617‧‧‧ arrow

619‧‧‧Draining pump

701‧‧‧ operation

703‧‧‧ operation

705‧‧‧ operation

707‧‧‧ operation

801‧‧‧ operation

803‧‧‧ operation

805‧‧‧ operation

1 shows the relationship between ion concentration and radical concentration achievable using a plurality of plasma chambers exposed to a common substrate processing region in accordance with an embodiment of the present invention; FIG. 2A shows a semiconductor in accordance with an embodiment of the present invention. a substrate processing system; FIG. 2B shows a semiconductor substrate processing system in accordance with an embodiment of the present invention; FIG. 2C shows a semiconductor substrate processing system in accordance with an embodiment of the present invention; 2D shows a variation of a second plasma chamber having an energized exit region for ion extraction in accordance with an embodiment of the present invention. 2E shows a variation of a system in which the first and second plasma chambers are separated by a dielectric material in accordance with an embodiment of the present invention; and FIG. 2F-1 shows the system of FIG. 2A in accordance with an embodiment of the present invention. a variation in which the power transfer members of the first and second plasma chambers are implemented as electrodes disposed on sidewalls of the first and second plasma chambers; and FIG. 2F-2 shows an embodiment in accordance with the present invention. Another variation of the system of Figure 2A, wherein the power delivery members of the first and second plasma chambers are implemented as electrodes disposed on the upper and lower surfaces of the first and second plasma chambers; Figure 2G A further variation of the system of FIG. 2A in accordance with an embodiment of the present invention is shown wherein the power delivery members of the first and second plasma chambers are implemented as coils disposed adjacent to the first and second plasma chambers FIG. 3A shows a vertical cross section of a semiconductor substrate processing system in accordance with an embodiment of the present invention. Figure 3B shows a horizontal cross-sectional view A-A of Figure 3A in accordance with an embodiment of the present invention. 3C shows a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers across the top plate assembly is reduced, in accordance with an embodiment of the present invention; FIG. 3D shows a A variation of the horizontal cross-sectional view of FIG. 3B of an embodiment in which the spacing between the first and second plasma microchambers across the top plate assembly is increased; FIG. 3E shows FIG. 3B in accordance with an embodiment of the present invention. A variation of the horizontal cross-sectional view in which the spacing between the first and second plasma microchambers across the top plate assembly is unequal; FIG. 4A shows another substrate plasma processing system in accordance with an embodiment of the present invention; 4B shows a horizontal cross-sectional view BB of FIG. 4A in accordance with an embodiment of the present invention; FIG. 4C shows a horizontal cross-sectional view of FIG. 4B in accordance with an embodiment of the present invention. a variation in which the spacing between the plasma rafts connecting the first and second plasma chambers of the top plate assembly is reduced; and FIG. 4D shows a variation of the horizontal cross-sectional view of FIG. 4B in accordance with an embodiment of the present invention, Wherein the spacing between the plasma rafts connecting the first and second plasma chambers of the top plate assembly is increased; and FIG. 4E shows a variation of the horizontal cross-sectional view of FIG. 4B in accordance with an embodiment of the present invention, wherein the connection is horizontal The spacing between the plasma rafts of the first and second plasma chambers across the top plate assembly is unequal; FIG. 5A shows another substrate plasma processing system in accordance with an embodiment of the present invention; FIG. 5B shows A horizontal cross-sectional view CC of FIG. 5A of an embodiment; FIG. 5C shows a variation of the horizontal cross-sectional view of FIG. 5B in accordance with an embodiment of the present invention, wherein the first and second portions across the lower surface of the top plate assembly are reduced The spacing between the sets of plasma microchambers; FIG. 5D shows a variation of the horizontal cross-sectional view of FIG. 5B in accordance with an embodiment of the present invention in which the first and second sets of plasma across the lower surface of the top plate assembly are added. Spacing between microchambers; 5E shows a variation of the horizontal cross-sectional view of FIG. 5B in accordance with an embodiment of the present invention, wherein the spacing between the first and second sets of plasma microchambers across the lower surface of the top plate assembly is unequal; FIG. 6 shows A flowchart of a method of processing a semiconductor substrate in accordance with an embodiment of the present invention; and FIG. 7 is a flow chart showing a method of processing a semiconductor substrate in accordance with an embodiment of the present invention.

101‧‧‧First plasma chamber

101A‧‧‧First plasma

102‧‧‧Second plasma chamber

102A‧‧‧Second plasma

103A‧‧‧First power supply

103B‧‧‧second power supply

104A‧‧‧First Process Gas Supply

104B‧‧‧Second process gas supply

105‧‧‧Substrate

106‧‧‧Processing area

107‧‧‧Substrate support

108A‧‧‧Reactive ingredients

108B‧‧‧Reactive ingredients

110‧‧‧ Direction

112‧‧‧ bias electrode

113‧‧‧Handling gap distance

116‧‧‧Cooling channel

200A‧‧‧Semiconductor substrate processing system

Claims (55)

A semiconductor substrate processing system comprising: a substrate support member defined to support a substrate exposed to a processing region; a first plasma chamber defined to generate a first plasma and supplied to the first plasma a reactive component to the processing region; and a second plasma chamber defined to generate a second plasma and to supply a reactive component of the second plasma to the processing region, wherein the first and second electricity The pulp chamber is defined as being independently controlled. The semiconductor substrate processing system of claim 1, further comprising: a first power source defined to supply a first power to the first plasma chamber; and a first processing gas supply defined as a first supply a process gas to the first plasma chamber; a second power source defined to supply a second power to the second plasma chamber; and a second process gas supply defined to supply a second process gas To the second plasma chamber. The semiconductor substrate processing system of claim 2, wherein the first and second power sources are independently controllable, or the first and second process gas supplies are independently controllable, or the first and the second The two power sources are independently controllable by the first and second process gas supplies. The semiconductor substrate processing system of claim 2, wherein the first power is a direct current (DC) power, a radio frequency (RF) power, or a combination of DC and RF power, and wherein the second The power is a combination of DC power, RF power, or DC and RF power. The semiconductor substrate processing system of claim 1, wherein the first and second plasma chambers are defined to operate in a simultaneous manner or in a pulse mode, wherein the pulse mode comprises the first plasma chamber Or the second plasma chamber at a given time And operate in an alternating sequence. The semiconductor substrate processing system of claim 1, wherein the substrate support is defined to be movable in a direction substantially perpendicular to one of a top surface of the substrate support on which the substrate is to be supported. The semiconductor substrate processing system of claim 1, wherein one or both of the first and second plasma chambers are defined as having an energizable plasma outlet region, the energizable plasma outlet region The system is defined to provide auxiliary electron generation to increase ion extraction. The semiconductor substrate processing system of claim 2, wherein the substrate support member comprises an electrode defined to apply a bias across the substrate support member and the first and second plasma chambers The processing area. The semiconductor substrate processing system of claim 1, further comprising: a baffle structure disposed between the first and second plasma chambers to face the first and second plasma chambers The substrate support extends, wherein the baffle structure is defined to reduce fluid communication between the first and second plasma chambers. The semiconductor substrate processing system of claim 1, further comprising: a discharge passage formed between the first and second plasma chambers to be substantially perpendicular to the substrate to be supported thereon One of the top surfaces of the substrate support extends away from the processing region. The semiconductor substrate processing system of claim 10, further comprising: a baffle structure disposed in the discharge channel between the first and second plasma chambers for the first and second electricity a slurry chamber extending toward the substrate support, wherein the barrier structure is defined to reduce fluid communication between the first and second plasma chambers, and wherein the barrier structure is sized to be smaller than the discharge passage For supply Outflow through the discharge passage around the baffle structure. A semiconductor substrate processing system comprising: a chamber having a top structure, a bottom structure, and a sidewall extending between the top and bottom structures, wherein the chamber surrounds a processing region; a substrate support member is disposed on a chamber, and is defined to support a substrate exposed to the processing region; and a top plate assembly disposed within the chamber above the substrate support member, the top plate assembly having an exposed portion to the processing region and opposite to the substrate support member a top surface of the top surface; the top plate assembly comprising a first plurality of plasma mashes connected to supply a reactive component of a first plasma to the processing region; the top plate assembly comprising a second plurality of plasma mashes connected A reactive component of a second plasma is supplied to the processing zone. The semiconductor substrate processing system of claim 12, wherein the substrate support is defined to be movable in a direction substantially perpendicular to one of a top surface of the substrate support on which the substrate is to be supported. The semiconductor substrate processing system of claim 12, wherein the substrate support comprises an electrode defined to apply a bias between the substrate support and the lower surface of the top plate assembly. region. The semiconductor substrate processing system of claim 12, further comprising: a first plurality of plasma microchambers each defined to produce the first plasma and to supply a reactive component of the first plasma to one or more of the first plurality of plasma pulps; and a second plurality A plasma microchamber, each defined to produce the second plasma, and to supply a reactive component of the second plasma to one or more of the second plurality of plasma impounds. The semiconductor substrate processing system of claim 15 of the patent application further includes: a first power source is defined to supply a first power to the first plurality of plasma microchambers; a first process gas supply is defined to supply a first process gas to the first plurality of plasma microchambers; a second power source is defined to supply a second power to the second plurality of plasma microchambers; And a second process gas supply, defined to supply a second process gas to the second plurality of plasma microchambers. The semiconductor substrate processing system of claim 16, wherein the first and second power sources are independently controllable, or the first and second process gas supplies are independently controllable, or the first and the The two power sources are independently controllable by the first and second process gas supplies. The semiconductor substrate processing system of claim 12, further comprising: a first plasma chamber defined to generate the first plasma and supply a reactive component of the first plasma to each of the first plurality of plasma cartridges; and a second plasma chamber, Defined to produce the second plasma and supply the reactive component of the second plasma to each of the second plurality of plasma crucibles. The semiconductor substrate processing system of claim 18, further comprising: a first power source defined to supply a first power to the first plasma chamber; and a first processing gas supply, defined as a first supply a process gas to the first plasma chamber; a second power source defined to supply a second power to the second plasma chamber; and a second process gas supply defined to supply a second process gas To the second plasma chamber. The semiconductor substrate processing system of claim 19, wherein the first and second power sources are independently controllable, or the first and second process gas supplies are independently controllable, or the first and the second The two power sources are independently controllable by the first and second process gas supplies. A method for processing a semiconductor substrate, comprising: a substrate setting step of placing a substrate on a substrate support member exposed to a processing region; and a first plasma generating step to generate a first plasma of a first plasma type a second plasma generating step of generating a second plasma of a second plasma type different from the first plasma type; a reactive component supply step for supplying both the first and second plasmas The composition is applied to the processing area to act on the substrate. The method for processing a semiconductor substrate according to claim 21, wherein the first plasma is formed to have a first ratio of ion density to radical density, and wherein the second plasma is formed to have an ion density ratio The second ratio of one of the radical densities, the second ratio of the ion density in the second plasma to the radical density is different from the first ratio of the ion density to the radical density in the first plasma. The method for processing a semiconductor substrate according to claim 21, further comprising: using a first power and a first processing gas to generate the first plasma; and using a second power and a second processing gas to generate The second plasma. The method for processing a semiconductor substrate according to claim 23, further comprising: independently controlling the first and second powers, or the first and second processing gases, or the first and second powers and the first And a second process gas. The method for processing a semiconductor substrate according to claim 23, wherein the first power is a direct current (DC) power, a radio frequency (RF) power, or a combination of DC and RF power, and wherein The second power is a combination of DC power, RF power, or DC and RF power. The method of processing a semiconductor substrate according to claim 21, wherein the reactive components from the first and second plasmas are supplied in a substantially uniform manner. Exposure to the processing area of the substrate. The method for processing a semiconductor substrate according to claim 21, wherein the reactive components from the first and second plasmas are generated and supplied in a simultaneous manner or in a pulse manner, wherein the pulse mode is included in a The reactive components of the first plasma or the second plasma are produced and supplied in an alternating sequence for a given time. The method for processing a semiconductor substrate according to claim 21, further comprising: an auxiliary electron generating step of generating auxiliary electrons to increase ions from one or both of the first and second plasmas into the processing region. The method for processing a semiconductor substrate according to claim 21, further comprising: a bias applying step of applying a bias voltage from the substrate support member across the processing region from one of the first and second plasmas or Both attract ions toward the substrate. The method for processing a semiconductor substrate according to claim 21, further comprising: a baffle structure setting step of disposing a baffle structure between a first crucible and a second crucible, wherein the first plasma is The first crucible is supplied to the processing region, and the second plasma is supplied to the processing region via the second crucible. A semiconductor substrate processing system comprising: a plate assembly having a processing side surface exposed to a plasma processing region; a discharge passage formed through the processing side surface of the plate assembly for movement from the plasma processing region Except for the exhaust gas; a plasma microchamber formed inside the discharge passage; a gas supply passage formed through the plate assembly to allow a process gas to flow into the plasma microchamber in the discharge passage; A power delivery member is formed in the plate assembly to transfer power to the plasma microchamber, and the process gas is converted into a plasma in the plasma microchamber in the discharge channel. The semiconductor substrate processing system of claim 31, further comprising: an electrode disposed outside the plate assembly, when the energy is applied thereto, causing ions to be attracted to the plasma microchamber from the discharge channel to In the plasma processing area. The semiconductor substrate processing system of claim 32, further comprising: a substrate support member configured to support exposure to one of the plasma processing regions, wherein the electrode is disposed in the substrate support. The semiconductor substrate processing system of claim 33, wherein the discharge channel is defined to be removed from the processing region substantially perpendicularly and away from a surface of the substrate support member on which the substrate is supported. gas. The semiconductor substrate processing system of claim 31, further comprising: a power source defined to supply the power to the power transmitting member; and a processing gas supply defined to supply a processing gas to the gas supply channel. A semiconductor substrate processing system according to claim 31, wherein the power transfer member is defined as a coil formed in the plate assembly to surround the plasma microchamber in the discharge passage. A semiconductor substrate processing system comprising: a chamber having a top structure, a bottom structure, and a sidewall extending between the top and bottom structures, the chamber including a processing region; a substrate support member disposed on the a substrate support having a top surface defined to support exposure to one of the processing regions; a top plate assembly disposed within the chamber above the substrate support, the top plate assembly having exposure to the processing region The top plate assembly includes: a first set of plasma microchambers, each formed to the lower surface of the top plate assembly, with respect to a lower surface of the top surface of the substrate support member a first gas supply channel network formed to flow a first process gas to each of the first set of plasma microchambers, each of the first set of plasma microchambers being defined Converting the first process gas into a first plasma exposed to one of the processing zones; a set of exhaust channels formed through the lower surface of the top plate assembly for removing exhaust gas from the processing zone; Component plasma microchambers, each formed inside the set of exhaust passages; and a second gas supply passage network formed to flow a second process gas to each of the second set of plasma microchambers, Each of the second set of plasma microchambers is defined to convert the second process gas into a second plasma that is exposed to one of the processing zones. The semiconductor substrate processing system of claim 37, wherein the second set of electricity is interspersed between the first set of plasma microchambers across the lower surface of the top plate assembly in a substantially average manner Pulp micro chamber. The semiconductor substrate processing system of claim 37, further comprising: a first power source defined to supply a first power to the first group of plasma microchambers; a first process gas supply, defined as a supply a first process gas to the first gas supply channel network; a second power source defined to supply a second power to the second set of plasma microchambers; and a second process gas supply defined as a supply a second process gas to the second gas supply channel network. The semiconductor substrate processing system of claim 39, wherein the first and second power sources are independently controllable, or the first and second process gas supplies are independently controllable, or the first and the second Two power sources and the first and second process gases The body supply can be controlled independently. The semiconductor substrate processing system of claim 39, further comprising: a first set of power transfer members, each disposed in the top plate assembly, adjacent to the first set of plasma microchambers, the first set of power transfer members Each of which is connected to receive the first power from the first power source; and a second set of power delivery members, each disposed within the top plate assembly, adjacent to the second set of plasma microchambers, the second Each of the set of power delivery members is coupled to receive the second power from the second power source. The semiconductor substrate processing system of claim 37, wherein the first group and the second group of plasma microchambers are defined to operate in a simultaneous manner or in a pulse mode, wherein the pulse mode comprises the first group The plasma microchamber or the second set of plasma microchambers are operated at an given time and in an alternating sequence. The semiconductor substrate processing system of claim 37, wherein the substrate support member is defined to extend vertically to a top surface of the substrate support member to which the substrate is to be supported and the top plate assembly The side between the lower surfaces moves upward. The semiconductor substrate processing system of claim 37, wherein the substrate support member comprises an electrode defined to apply a bias between the substrate support member and the lower surface of the top plate assembly. region. A method for processing a semiconductor substrate, comprising: a substrate setting step of placing a substrate on a substrate support member exposed to a processing region; and operating a first set of plasma microchamber operation steps, the operation being exposed to one of the processing regions a set of plasma microchambers whereby each of the first set of plasma microchambers produces a first plasma and supplies reactive components of the first plasma to the processing zone, the first set a plasma microchamber is located above the processing region relative to the substrate support; and a second set of plasma microchamber operating steps are exposed to a second set of plasma microchambers of the processing region, thereby Each of the second set of plasma microchambers generates a second plasma and supplies a reactive component of the second plasma to the processing zone, wherein the second plasma is different from the first plasma, The second set of plasma microchambers are positioned above the processing region relative to the substrate support and are interspersed between the first set of plasma microchambers in a substantially even manner. The method for processing a semiconductor substrate according to claim 45, further comprising: a first power supply step of supplying a first power to the first set of plasma microchambers; and a first process gas supply step of supplying a first Processing a gas to the first set of plasma microchambers; a second power supply step of supplying a second power to the second set of plasma microchambers; and a second process gas supply step of supplying a second process gas to The second set of plasma microchambers. The method for processing a semiconductor substrate according to claim 46, further comprising: independently controlling the first and second powers, or the first and second processing gases, or the first and second powers and the first And a second process gas. The method for processing a semiconductor substrate according to claim 46, wherein the first power is a direct current (DC) power, a radio frequency (RF) power, or a combination of DC and RF power, and wherein The second power is a combination of DC power, RF power, or DC and RF power. The method for processing a semiconductor substrate according to claim 46, further comprising: an exhaust gas removing step of removing exhaust gas from the processing region via a set of exhaust passages, the set of exhaust passages being defined to be substantially vertical and away The direction of a surface of the substrate support on which the substrate is placed removes gas from the processing region. The method of processing a semiconductor substrate according to claim 49, wherein the second group of plasma microchambers are each defined inside the group of discharge channels. The method for processing a semiconductor substrate according to claim 45, further comprising: operating the first set of plasma microchambers to produce the first plasma, wherein the crucible has a first ratio of ion density to radical density; Operating the second set of plasma microchambers to produce the second plasma, the crucible having a second ratio of ion density to radical density, the second ratio of ion density to radical density in the second plasma Different from the first ratio of ion density to radical density in the first plasma. The method of treating a semiconductor substrate according to claim 51, wherein the first plasma has a radical density higher than an ion density, and wherein the second plasma has an ion density higher than a radical density. The method of processing a semiconductor substrate according to claim 45, wherein the first group and the second group of plasma microchambers are operated in a simultaneous manner. The method of processing a semiconductor substrate according to claim 45, wherein the first group and the second group of plasma microchambers are operated in a pulse mode, wherein the pulse mode comprises the first group of plasma microchambers or The second set of plasma microchambers are operated at an given time and in an alternating sequence. The method for processing a semiconductor substrate according to claim 45, further comprising: a bias applying step of applying a bias voltage from the substrate support member across the processing region from one of the first and second plasmas or Both attract ions toward the substrate.