KR20140036224A - Semiconductor processing system having multiple decoupled plasma sources - Google Patents

Abstract

The semiconductor substrate processing system includes a substrate support defined to support the substrate at an exposure to the processing region. The system also includes a first plasma chamber defined to generate a first plasma and to supply reactive components of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and to supply reactive components of the second plasma to the processing region. The first and second plasma chambers are defined to be controlled independently.

Description

Semiconductor Processing System Having Multiple Decoupled Plasma Sources

Plasma sources used for thin film processing in semiconductor device manufacturing often do not achieve the most desirable conditions for dry etching due to their inability to separately control ionic and radical concentrations in the plasma. For example, in some applications, preferred conditions for plasma etching will be achieved by increasing the ion concentration in the plasma while simultaneously maintaining the radical concentration at a constant level. However, independent control of this type of radical concentration versus ion concentration cannot be achieved using a common plasma source that is commonly used for thin film processing. Within this context, the present invention has emerged.

In one embodiment, a semiconductor substrate processing system is described. The system includes a substrate support defined to support the substrate in an exposure to the processing area. The system also includes a first plasma chamber defined to generate a first plasma and to supply reactive components of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and to supply reactive components of the second plasma to the processing region. The first and second plasma chambers are defined to be controlled independently.

In another embodiment, a semiconductor substrate processing system is described. The system includes a top structure, a bottom structure, and sidewalls extending between the top structure and the bottom structure. The chamber surrounds the processing area. The substrate support is disposed in the chamber and is defined to support the substrate at an exposure to the processing area. The system also includes a top plate assembly disposed in the chamber above the substrate support. The top plate assembly has a bottom surface exposed to the processing area and opposite the top surface of the substrate support. The top plate assembly includes a first plurality of plasma ports connected to supply reactive components of the first plasma to the processing region. The top plate assembly also includes a second plurality of plasma ports connected to supply reactive components of the second plasma to the processing region.

In yet another embodiment, a method for processing a semiconductor substrate is described. The method includes an operation for placing a substrate on a substrate support in an exposure to the processing area. The method also includes an operation for generating a first plasma of a first plasma type. The method also includes an operation for generating a second plasma of a second plasma type different from the first plasma type. The method further includes an operation for supplying reactive components of both the first and second plasmas to the processing region to affect processing of the substrate.

In one embodiment, a semiconductor substrate processing system is described. The system includes a plate assembly having a process-side surface exposed to a plasma processing region. An exhaust channel is formed through the process-side surface of the plate assembly to provide removal of exhaust gases from the plasma processing region. The plasma microchamber is formed inside the discharge channel. In addition, a gas supply channel is formed through the plate assembly to flow the process gas from the discharge channel into the plasma microchamber. The power delivery component is then formed in the plate assembly to transmit power to the plasma microchamber to convert the process gas from the discharge chamber to the plasma inside the plasma microchamber.

In another embodiment, a semiconductor substrate processing system is described. The system includes a top structure, a bottom structure, and a chamber having sidewalls extending between the top structure and the bottom structure. The chamber includes a processing region. The substrate support is disposed in the chamber. The substrate support has a top surface defined to support the substrate at an exposure to the processing area. The system also includes a top plate assembly disposed in the chamber above the substrate support. The top plate assembly has a bottom surface exposed to the processing area and opposite the top surface of the substrate support. The top plate assembly includes a first set of plasma microchambers each formed with a bottom surface of the top plate assembly. The top plate assembly also includes a first network of gas supply channels configured to flow a first process gas into each of the first set of plasma microchambers. Each of the first set of plasma microchambers is defined to convert the first process gas into a first plasma at an exposure to the processing region. The top plate assembly also includes a set of outlet channels formed through the bottom surface of the top plate assembly to provide removal of the exhaust gases from the processing region. The top plate assembly also includes a second set of plasma microchambers each formed inside a set of outlet channels. The top plate assembly further includes a second network of gas supply channels configured to flow a second process gas into each of the second set of plasma microchambers. Each of the second set of plasma microchambers is defined to convert a second process gas into a second plasma at an exposure to the processing region.

In another embodiment, a method for processing a semiconductor substrate is described. The method includes an operation for placing a substrate on a substrate support in an exposure to the processing area. The method also includes operating the first set of plasma microchambers in an exposure to the processing region, whereby each of the first set of plasma microchambers produces a first plasma and Reactive components are fed to the processing region. The first set of plasma microchambers is located above the processing region opposite from the substrate support. The method also includes operating a second set of plasma microchambers in an exposure to the processing region, whereby each of the second set of plasma microchambers generates a second plasma, Reactive components are supplied to the plasma region. The second plasma is different from the first plasma. And, the second set of plasma microchambers is located above the processing region opposite from the substrate support. The second set of plasma microchambers are interspered in a substantially uniform manner between the first set of plasma microchambers.

Other aspects and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings which illustrate the invention by way of example.

1 illustrates the relationships between ion concentration and radical concentration achievable using the use of multiple plasma chambers in an exposure to a common substrate processing region, according to one embodiment of the invention.
2A illustrates a semiconductor substrate processing system, in accordance with an embodiment of the present invention.
2B illustrates a semiconductor substrate processing system, in accordance with an embodiment of the present invention.
2C illustrates a semiconductor substrate processing system, in accordance with an embodiment of the present invention.
FIG. 2D illustrates a variation of the second plasma chamber having an energized outlet region for enhancing ion extraction, in accordance with an embodiment of the present invention.
2E illustrates a variation of a system in which the first and second plasma chambers are separated by a dielectric material, in accordance with an embodiment of the present invention.
FIG. 2F is another variation of the system of FIG. 2A in which power delivery components of the first and second plasma chambers are implemented as electrodes disposed on sidewalls in the first and second plasma chambers, in accordance with an embodiment of the present invention; To show.
FIG. 2FB is the system of FIG. 2A in which power delivery components of the first and second plasma chambers are implemented as electrodes disposed on upper and lower surfaces in the first and second plasma chambers, in accordance with an embodiment of the present invention. Another variant of is shown.
FIG. 2G illustrates another variation of the system of FIG. 2A in which power delivery components of the first and second plasma chambers are implemented as coils disposed proximate the first and second plasma chambers, in accordance with an embodiment of the present invention. Illustrated.
3A illustrates a vertical cross section of a semiconductor substrate processing system, in accordance with an embodiment of the present invention.
FIG. 3B shows a horizontal cross sectional view AA as referenced in FIG. 3A, in accordance with an embodiment of the present invention.
FIG. 3C illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers across the top plate assembly is reduced, according to one embodiment of the invention.
FIG. 3D illustrates a variation of the horizontal cross sectional view of FIG. 3B with increasing spacing between the first and second plasma microchambers across the top plate assembly, according to one embodiment of the invention.
FIG. 3E illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers across the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
4A illustrates another system for substrate plasma processing, in accordance with an embodiment of the present invention.
4B illustrates a horizontal cross sectional view BB as referenced in FIG. 4A, in accordance with an embodiment of the present invention.
4C illustrates a variation of the horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers across the top plate assembly is reduced, in accordance with one embodiment of the present invention.
4D illustrates a variation of the horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers across the top plate assembly is increased according to one embodiment of the present invention.
4E illustrates a variation of the horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers across the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
5A illustrates another system for substrate plasma processing, in accordance with an embodiment of the present invention.
5B illustrates a horizontal cross sectional view CC as referenced in FIG. 5A, in accordance with an embodiment of the present invention.
FIG. 5C illustrates a variation of the horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers across the bottom surface of the top plate assembly is reduced, in accordance with an embodiment of the present invention.
FIG. 5D illustrates a variation of the horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers across the bottom surface of the top plate assembly is increased in accordance with one embodiment of the present invention.
FIG. 5E illustrates a variation of the horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers across the bottom surface of the top plate assembly is non-uniform, in accordance with an embodiment of the present invention.
6 shows a flowchart of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention.
7 shows a flowchart of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well-known process operations are not described in detail in order not to unnecessarily obscure the present invention.

Various embodiments of the invention are independent using separate control parameters to achieve decoupled control of ion and radical concentrations within a plasma processing region in which two or more types of plasma generation devices are fluidly connected. And two or more types of plasma generating devices, such as plasma chambers, which can be operated with a substrate, wherein the substrate to be processed is disposed within a plasma processing region. For example, in one embodiment, the first plasma chamber can be operated to produce a first plasma having a radical concentration higher than the ion concentration. In addition, in this exemplary embodiment, the second plasma chamber may be operated to produce a second plasma having an ion concentration higher than the radical concentration. Since the first and second plasma chambers are fluidly connected to the same substrate processing region, the first plasma chamber is operated to control the amount of radical components in the substrate processing region, and the second plasma chamber is configured to control the amount of ionic components in the substrate processing region. It is operated to control the amount. In this way, the first plasma chamber is controlled to tune the ion concentration in the substrate processing region and the second plasma chamber is controlled to tune the radical concentration in the substrate processing region.

In one embodiment, as used herein, the term "substrate" refers to a semiconductor wafer. However, in other embodiments, the term “substrate” as used herein may refer to substrates formed of sapphire, GaN, GaAs or SiC, or other substrate materials, and may include glass panels / substrates, metal It should be understood that the foils may include foils, metal sheets, polymeric materials, and the like. In various embodiments, the term “substrate” as referred to herein may also vary in form, shape, and / or size. For example, in some embodiments, a “substrate” as referred to herein may correspond to a 200 mm (millimeter) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. In addition, in some embodiments, a “substrate” as referred to herein, may correspond to, among other shapes, a non-circular substrate, such as a rectangular substrate for a flat panel display or the like. A “substrate”, as referred to herein, is shown in the drawings of various exemplary embodiments as the substrate 105.

Independent operation of the multiple plasma chambers to provide reactive components to the common substrate processing region provides a substantially decoupled adjustment of the ion concentration relative to the radical concentration within the common substrate processing region. In various embodiments, the generation of different types of plasmas in the plurality of plasma chambers is achieved through independent control of power supplies and / or gas supplies associated with the plurality of plasma chambers. Further, in some embodiments, the outputs of the multiple plasma chambers can be placed in a spatial array in fluid communication with the substrate processing region. Multiple plasma chambers such that different reactive components of different types of plasmas formed in the multiple plasma chambers are supplied to the substrate processing region in a substantially uniform manner to affect substantially uniform processing of the substrate in the substrate processing region. Outputs are interspersed with each other and can be spaced close enough to each other.

1 illustrates the relationship between ion concentration and radical concentration achievable with the use of multiple plasma chambers in an exposure to a common substrate processing region, according to one embodiment of the invention. The first line 301 shows a variation of the ion concentration versus radical concentration in the first plasma generated in the first plasma chamber fluidly connected to the common substrate processing region. In this example, the first plasma has a higher radical concentration than the ion concentration. The second line 303 shows a variation of the ion concentration versus radical concentration in the second plasma generated in the second plasma chamber fluidly connected to the common substrate processing region. In this example, the second plasma has an ion concentration higher than the radical concentration. Thus, the first plasma is generated to mainly supply radical components to the substrate processing region, and the second plasma is generated to mainly supply ionic components to the substrate processing region.

Through independent control of the first and second plasma chambers, essentially any ion concentration versus radical concentration in the domain extending between the first line 301 and the second line 303 is achieved within the substrate processing region. It is possible. For example, the second plasma chamber may be operated alone to supply the first ion-to-radical concentration ratio 305 in the substrate processing region. When used together, the first plasma chamber may be operated to increase the radical concentration in the substrate processing region, while the second plasma chamber may be operated to maintain a substantially steady ion concentration in the substrate processing region. Thereby creating a second ion-to-radical concentration ratio 307 in the substrate processing region that is not achievable by the first or second plasma chamber alone. Similarly, when used together, the second plasma chamber may be operated to reduce ion concentration in the substrate processing region, while the first plasma chamber may be operated to maintain a substantially steady radical concentration in the substrate processing region. Thereby creating a third ion-to-radical concentration ratio 309 in the substrate processing region that is not achievable by the first or second plasma chamber alone.

In addition to FIG. 1, the plasma chamber may be operated alone to supply a fourth ion-to-radical concentration ratio 311 in the substrate processing region. When used together, the second plasma chamber can be operated to increase the ion concentration in the substrate processing region, while the first plasma chamber is operated to maintain a substantially steady radical concentration in the substrate processing region, Thereby creating a fifth ion-to-radical concentration ratio 313 in the substrate processing region that is not achievable with the first or second plasma chamber alone. Similarly, when used together, the first plasma chamber may be operated to reduce the radical concentration in the substrate processing region, while the second plasma chamber may be operated to maintain a substantially steady ion concentration in the substrate processing region. Thereby creating a sixth ion-to-radical concentration ratio 315 in the substrate processing region that is not achievable by the first or second plasma chamber alone.

Based on the foregoing, in one embodiment of the present invention, multiple independently controlled plasma chambers provide ion-to-radical concentration ratios in the substrate processing region that are not achievable through operation of a single plasma chamber alone. In order to understand this, it should be understood that it is used to supply reactive components to the common substrate processing region. Based on the description with respect to FIG. 1, when the reactive components of multiple plasmas are combined, the generation of multiple plasmas with significantly different ion-to-radical concentration ratios results in an ion-to-radical concentration ratio in the substrate processing region. It should be further recognized that it provides a broader range of. There are a number of semiconductor substrate processing systems here providing spatial coupling of reactive component outputs from multiple independently controlled plasma chambers to create a combination of reactive components in a substrate processing region that is not achievable with a single plasma chamber alone. Described.

2A illustrates a semiconductor substrate processing system 200A, in accordance with an embodiment of the present invention. System 200A includes a substrate support 107 defined to support substrate 105 at an exposure to processing region 106. System 200A also generates a first plasma 101A and supplies reactive components 108A of the first plasma 101A to the processing region 106 through an opening in the first plasma chamber 101. A first plasma chamber 101 defined. The system 200A also generates a second plasma 102A and supplies reactive components 108B of the second plasma 102A to the processing region 106 through an opening in the second plasma chamber 102. A second plasma chamber 102 defined. The first plasma chamber 101 and the second plasma chamber 102 are defined to be controlled independently.

More specifically, the first plasma chamber 101 is electrically connected to the first power supply 103A. The first power supply 103A is defined to supply the first power to the first plasma chamber 101. The first plasma chamber 101 is also fluidly connected to a first process gas supply 104A defined to supply the first process gas to the first plasma chamber 101. The first plasma chamber 101 is defined to apply first power to the first process gas to generate the first plasma 101A in the first plasma chamber 101.

The second plasma chamber 102 is electrically connected to the second power supply 103B. The second power supply 103B is defined to supply second power to the second plasma chamber 102. The second plasma chamber 102 is also fluidly connected to a second process gas supply 104B defined to supply a second process gas to the second plasma chamber 102. The second plasma chamber 102 is defined to apply a second power to the second process gas to produce the second plasma 102A in the second plasma chamber 102.

It should be understood that, depending on the applied power and the process gas used, the first and second plasma chambers 101/102 can generate significantly different types of plasmas 101A / 102A. In one embodiment, the first and second power supplies 103A / 103B are independently controllable. Also, in one embodiment, the first and second process gas supplies 104A / 104B are independently controllable. And in another embodiment, the first and second power supplies 103A / 103B and the first and second process gas supplies 104A / 104B are independently controllable.

Independent control of the first and second process gas supplies 104A / 104B is essentially related to one or more of the gas type / mixture, gas flow rate, gas temperature, and gas pressure, among any other process gas related parameters. It should be understood. In addition, independent control of the first and second power supplies 103A / 103B is essentially dependent on one or more of radio frequency (RF) amplitude, RF frequency, voltage level, and current level, among any other power related parameters. It should be understood that it may be about.

In one embodiment, the first power supplied to the first plasma chamber 101 by the first power supply 103A is any one of direct current (DC) power, RF power, or a combination of DC and RF power. Similarly, in one embodiment, the second power supplied by the second power supply 103B to the second plasma chamber 102 is either DC power, RF power, or a combination of DC and RF power. In one embodiment, the first power supplied by the first power supply 103A to the first plasma chamber 101 is 2 megahertz (MHz), 27 MHz, 60 MHz, 400 kilohertz (kHz), or their RF power having a combination of frequencies, and the second power supplied by the second power supply 103B to the second plasma chamber 102 may be a frequency of any one of 2 MHz, 27 MHz, 60 MHz, 400 kHz, or a combination thereof. RF power to have. In one version of this embodiment, the frequencies of the first and second powers are different. However, in another version of this embodiment, the frequencies of the first and second powers are such that the process gases supplied to the first and second plasma chambers 101/102 are not the first and second plasmas 101A / 102A. Providing the difference between) may be the same.

The type of power applied to the first and second plasma chambers 101/102 depends in part on the type of plasma chamber used. In some exemplary embodiments, each of the first and second plasma chambers 101/102 may be a hollow cathode chamber, an electron cyclotron resonant chamber, or a microwave driven chamber, or inductively coupled chamber, or capacitive coupling. Any one of the ringed chambers. Also, in one embodiment, the first and second plasma chambers 101/102 are plasma chambers of the same type. However, in another embodiment, the first and second plasma chambers 101/102 are different types of plasma chambers.

In addition, it should be understood that in different embodiments, the first and second plasma chambers 101/102 may include different forms of power delivery components. The power delivery components are responsible for delivering power to the process gas inside the first / second plasma chamber 101/102. For example, in one embodiment, the walls of the first / second plasma chambers 101/102 are electrically conductive and provide the functionality of power delivery components. In this embodiment, the first and second plasma chambers 101/102 are reversed by the power delivered to one plasma chamber 101/102 by the neighboring plasma chambers 101/102. To ensure that they are not received, they can be separated from each other by the dielectric material and the conductive shield. 2E illustrates a variation of system 200A in which first and second plasma chambers 101/102 are separated by conductive shield 151 disposed between dielectric material 150, according to one embodiment of the present invention. To show. In one embodiment, the conductive shield 151 is electrically connected to a reference ground potential.

2fa and 2fb show the system 200A of FIG. 2A in which power delivery components of the first and second plasma chambers 101/102 are implemented as electrodes 160 disposed in the first and second plasma chambers. Another variation of) is shown. 2F shows one exemplary embodiment in which electrodes 160 are disposed on sidewalls of the first and second plasma chambers 101/102. 2FB shows one exemplary embodiment in which electrodes 160 are disposed on upper and lower surfaces within the interior of the first and second plasma chambers 101/102. In this embodiment, the electrode 160 on the upper surface in the interior of the plasma chambers 101/102 has a first and second process gas having an internal volume of the first and second plasma chambers 101/102. One or more holes defined therethrough to enable fluid communication of the supplies 104A / 104B. Furthermore, in this embodiment, the electrode 160 on the lower surface in the interior of the first and second plasma chambers 101/102 is characterized by the effect of each of the reactive components of the first and second plasmas 101 A / 102 A. It includes one or more holes defined through it to enable delivery. It should be understood that the arrangements of the electrodes 160 of FIGS. 2fa and 2fb are shown by way of example. In other embodiments, the electrodes 160 may be disposed on any one surfaces in the plasma generation volume of the first / second plasma chamber 101/102.

2G shows coils in which power delivery components of the first and second plasma chambers 101/102 are disposed proximate to the first and second plasma chambers 101/102, according to one embodiment of the invention. Another variation of the system 200A of FIG. 2A implemented as 170 is shown. It should be understood that the top arrangement of the coils 170 of FIG. 2G is shown by way of example. In other embodiments, the coils 170 may be disposed proximate any one or more outer surfaces of the first / second plasma chamber 101/102. It should be understood that the different power delivery component embodiments of FIGS. 2A, 2E, 2F, and 2G are shown by way of example. In other embodiments, the first and second plasma chambers 101/102 may implement different power delivery components than those illustrated in FIGS. 2A, 2E, 2F, and 2G.

Given the foregoing, the first and the second to achieve conditions in which one plasma provides higher concentrations of ions relative to radicals and the other plasma provides higher concentrations of radicals than ions. It should be understood that the plasma chambers 101/102 may be operated using different process gases and / or different powers. In addition, the first and second plasma chambers 101/102 may be configured to provide the first and second plasma chambers 101 / 102A in a substantially uniform manner within the processing region 106 above the substrate support 107. It is defined to dispense the reactive components 108A / 108B, respectively.

In one embodiment, the first and second plasma chambers 101/102 are defined to operate at internal pressures up to about 1 Torr (T). In addition, in one embodiment, the processing region 106 is operated within a pressure range extending from about 1 millitorr (mT) to about 100 mT. Outlets of the first and second plasma chambers 101/102 are defined to provide and control a pressure drop between the first and second plasma chambers 101/102 and the interiors of the processing region 106. do. Also, if desired, in one embodiment, the radical components are arranged in a cross-flow arrangement in order to manage the etch generation distribution across the substrate 105. Cross-flow may be used from within one of the 102 or within the processing region 106.

In one exemplary embodiment, system 200A includes a process gas throughput flow rate of about 1000 scc / sec (standard square centimeters per second), and a reactive component 108A / in processing region 106 of about 10 milliseconds (ms). 108B) using the residence time, is operated to provide the processing region 106 at a pressure of about 10 mT. It should be understood and appreciated that the exemplary operating conditions represent one of an essentially unlimited number of operating conditions that can be achieved using system 200A. The example operating conditions do not indicate or imply any limitation as to the possible operating conditions of the system 200A.

In one embodiment, the substrate support 107 is defined to be movable in a direction 110 substantially perpendicular to the top surface of the substrate support 107 on which the substrate 105 is to be supported, whereby the process gap distance ( 113) is made possible. The process gap distance 113 extends vertically between the top surface of the substrate support 107 and the first and second plasma chambers 101/102. In one embodiment, the substrate support 107 is movable in the direction 110 such that the process gap distance is adjustable within a range extending from about 2 cm to about 10 cm. In one embodiment, the substrate support 107 is adjusted to provide a process gap distance 113 of about 5 cm. In an alternative embodiment, adjustment of the process gap distance 113 may be achieved through the movement of the first and second plasma chambers 101/102 in the direction 110 with respect to the substrate support 107. .

Adjustment of the process gap distance 113 provides adjustment of the dynamic range of ion flux emanating from either or both of the first and second plasma chambers 101/102. In particular, the ion flux reaching the substrate 105 can be reduced by increasing the process gap distance 113, or vice versa. In one embodiment, when the process gap distance 113 is adjusted to achieve adjustment in the ion flux at the substrate 105, the process gas flow rate through the higher radical-supply plasma chamber 101/102 is greater than the substrate. It can be provided to provide independent control of the radical flux at 105. Additionally, in combination with the ion and radical fluxes emanating from the first and second plasma chambers, the process gap distance 113 provides a substantially uniform ion density and radical density in the substrate 105. Be aware of being controlled.

In one embodiment, the substrate support 107 is a bias electrode for generating an electric field for attracting ions towards the substrate support 107 and thereby towards the substrate 105 held on the substrate support 107. 112. In addition, in one embodiment, the substrate support 107 includes a number of cooling channels 116 through which cooling fluid can be flowed during plasma processing operations to maintain temperature control of the substrate 105. Further, in one embodiment, the substrate support 107 can include a number of lifting pins defined to lift and lower the substrate 105 relative to the substrate support 107. In one embodiment, the substrate support 107 is defined as an electrostatic chuck mounted to generate an electrostatic field for rigidly holding the substrate 105 on the substrate support 107 during plasma processing operations.

In various embodiments, the first and second plasma chambers 101/102 are defined to operate in either a simultaneous manner or a pulsed manner. Operation of the first and second plasma chambers 101/102 in the pulsed manner includes either the first plasma chamber 101 or the second plasma chamber 102 operating in a given time and alternating sequence. . In detail, the first plasma chamber 101 will operate for a first time period during which the second plasma chamber 102 is idle, and then the second plasma chamber 102 is idle when the first plasma chamber 101 is idle. The first and second plasma chambers 101/102 operate in this alternating manner for a predefined total time period.

Operation of the first and second plasma chambers 101/102 in the pulsed manner prevents / undesired communication between the first and second plasmas 101A / 102A with respect to process gas and / or power. Can function to restrict Prevention of undesirable communication between the first and second plasma chambers 101/102 ensures that process gases / species of the first plasma 101A do not enter the second plasma chamber 102. And ensuring that process gases / species of the second plasma 102A do not enter the first plasma chamber 101. The prevention of undesired communication between the first and second plasma chambers 101/102 also indicates that power supplied to the first plasma chamber 101 does not flow to the second plasma 102A in the second plasma chamber. And ensuring that the power supplied to the second plasma chamber 102 does not flow into the first plasma 101A in the first plasma chamber 101.

In embodiments in which the first and second plasma chambers 101/102 are operated in a simultaneous manner, the first and second plasma chambers 101/102 are prevented / restricted from undesirable communication between them. Is defined to ensure that For example, the openings of the first and second plasma chambers 101/102 in the exposed portion to the processing region 106 may be defined by the first and second plasma chambers in terms of process gas and / or power. It is sized small enough and spaced far enough apart to avoid cross-communication between 101/102. Based on the foregoing, the first and second plasma chambers 101/102 may be subjected to a substrate with respect to one or more of process gas flow rate, process gas pressure, power frequency, power amplitude, on / off duration, and operation timing sequence. It should be understood that it can be controlled independently during the plasma process.

2B illustrates a semiconductor substrate processing system 200B, in accordance with an embodiment of the present invention. System 200B is a variation of system 200A of FIG. 2A. Specifically, system 200B includes a baffle disposed between the first and second plasma chambers 101/102 to extend from the first and second plasma chambers 101/102 toward the substrate support 107. baffle) structure 109. The baffle structure 109 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Further, in one embodiment, the baffle structure 109 is formed from dielectric materials to reduce power communication between the first and second plasma chambers 101/102. In one embodiment, the baffle structure 109 is defined to be movable in a direction 114 that is substantially perpendicular to the top surface of the substrate support 107 on which the substrate 105 is to be supported.

2C illustrates a semiconductor substrate processing system 200C, in accordance with an embodiment of the present invention. System 200C is a variation of system 200B of FIG. 2B. In particular, the system 200C includes first and second plasma chambers 101 such that the substrate 105 extends away from the processing region 106 in a direction substantially perpendicular to the top surface of the substrate support 107 to be supported. A discharge channel 111 formed between the < RTI ID = 0.0 > In one embodiment, the discharge channel 111 is open and clear to provide for the release of gases from the processing region 106. However, in another embodiment, the baffle structure 109 is adapted to extend from the first and second plasma chambers 101/102 toward the substrate support 107. It is disposed in the discharge channel 111 between the 102. The baffle structure 109 disposed in the discharge channel 111 is defined to reduce fluid communication between the first and second plasma chambers 101/102. Further, in one embodiment, the baffle structure 109 disposed in the discharge channel 111 is formed from the dielectric material to reduce power communication between the first and second plasma channels 101/102. In addition, the baffle structure 109 is sized smaller than the outlet channel 111 to provide an outlet flow 116 through the outlet channel 111 around the baffle structure 109.

In the example embodiments of FIGS. 2B and 2C, the baffle structure 109 can be used to limit fluid and / or power communication between adjacent plasma channels (eg, 101, 102). In addition, the baffle structure 109 can be used to help achieve uniformity of ions and radicals across the substrate 105. As mentioned with respect to FIGS. 2B and 2C, the baffle structure 109 is movable in a direction 114 that is substantially perpendicular to the substrate support 107. This movement of the baffle structure 109 in the direction 114 enables the adjustment of the distance 115 as measured vertically between the baffle structure 109 and the substrate 105.

In various embodiments, the distance 115 between the baffle structure and the substrate 105 can be up to 5 cm. However, distance 115 is a function of the process gas flow rates emanating from the first and second plasma chambers 101/102 and other parameters such as ionic and radical fluxes. In one exemplary embodiment, the distance 115 between the baffle structure and the substrate 105 is about 2 cm. Additionally, although the baffle structure 109 as shown in the exemplary embodiments of FIGS. 2B and 2D is shaped into a rectangle in cross section, the baffle structure 109 is cross-flow and turbulence, among others. In order to achieve certain effects in the processing region 106, such as controlling process gas flow conditions, the system may include other methods, for example, a rounded bottom, an angled bottom, a tapered top It should be understood that the present invention may be shaped as such.

In some situations, radical generation in the plasma is not avoidable when attempting to produce ions mainly in the plasma. In these situations, when the main purpose is to achieve ionic component transfer from the plasma, radical component transfer from the resulting plasma is also somewhat unavoidable. Also, extracting ions from the plasma is such that the opening between the ion source, ie, the plasma and the processing region, for example, the processing region 106, is large enough so that sheath does not inhibit plasma extraction, and the extraction media walls It is inferred that collisions with are low enough not to neutralize ions. In one embodiment of the invention, the ion source region may be defined at the opening between the ion source and the processing region. This ion source region may be implemented as an outlet region energized to provide supplemental electron generation to enhance ion extraction from the ion source. For example, in one embodiment, the outlet region of the plasma chamber, which is exposed to the processing region, is hollow to enhance ion generation within the outlet region itself and correspondingly to improve ion extraction from the plasma chamber. It can be defined as a cathode.

2D illustrates a variation of the second plasma chamber 102A having an energized outlet region 225 to enhance ion extraction, in accordance with one embodiment of the present invention. However, one or both of the first and second plasma chambers 101/102 may be defined to have a defined energizable plasma outlet region 225 to provide complementary electron generation to increase ion extraction. It should be understood. In one embodiment, the energizable plasma outlet region 225 is defined as a hollow cathode. In one version of this embodiment, the outlet region 225 is surrounded by an electrode 220 that can be powered by DC power, RF power, or a combination thereof. When reactive components from the plasma 102A flow through the energizable plasma outlet region 225, the power dissipating from the electrode 220 will liberate fast electrons in the outlet region 225, which in turn This will result in further ionization in the process gases through the outlet region 225, thereby improving ion extraction from the plasma chamber 102. In addition, a bias applied across the processing region 106 by the bias electrode 112 may draw ions from the outlet 102 225 towards the substrate 102 and the plasma 102A in the chamber 102 ( function).

3A illustrates a vertical cross sectional view of a semiconductor substrate processing system 400, in accordance with an embodiment of the present invention. The system 400 includes a top structure 401B, a bottom structure 401C, and a chamber 401 formed by sidewalls 401A extending between the top structure 401B and the bottom structure 401C. The chamber 401 surrounds the processing region 106. In various embodiments, the chamber sidewalls 401A, top structure 401B, and bottom structure 401C can structurally withstand pressure differences and temperatures at which the chamber 401 materials they will be exposed during plasma processing. And may be formed from different materials such as, for example, stainless steel or aluminum, so long as it is chemically compatible with the plasma processing environment.

The system 400 also includes a substrate support 107 disposed within the chamber 401 and defined to support the substrate 105 at an exposure to the processing region 106. The substrate support 107 is defined to hold the substrate 105 thereon during the performance of a plasma processing operation on the substrate 105. In the exemplary embodiment of FIG. 3A, the substrate support 107 is held by a cantilevered arm 405 attached to the wall 401A of the chamber 401. However, in one embodiments, the substrate support 107 can be attached to the bottom plate 401C of the chamber 401 or another member disposed inside the chamber 401. In various embodiments, the substrate support 107 is, for example, as long as the substrate support 107 can structurally withstand pressure differences and temperatures that it will be exposed to during plasma processing, and is chemically compatible with the plasma processing environment. It may be formed from different materials such as stainless steel, aluminum, or ceramics.

In one embodiment, the substrate support 107 is a bias electrode for generating an electric field for attracting ions towards the substrate support 107 and thereby towards the substrate 105 held on the substrate support 107. 112. In addition, in one embodiment, the substrate support 107 includes a number of cooling channels 116 through which cooling fluid can be flowed during plasma processing operations to maintain temperature control of the substrate 105. Further, in one embodiment, the substrate support 107 can include a number of lifting pins 411 defined to lift and lower the substrate 105 relative to the substrate support 107. In one embodiment, door assembly 413 is disposed within chamber wall 401A to enable insertion and removal of substrate 105 into / from chamber 401. Additionally, in one embodiment, the substrate support 107 is defined as an electrostatic chuck mounted to generate an electrostatic field for holding the substrate 105 firmly on the substrate support 107 during plasma processing operations. .

The system 400, when positioned on the substrate support 107, is located above the substrate 105 and spaced from the substrate support 107 and above the substrate support 107 so as to be spaced apart from the substrate 105. And further includes a top plate assembly 407 disposed within 401. The substrate processing region 106 is between the top plate assembly 407 and the substrate support 107 to reside above the substrate 105 when positioned on the substrate support 107. As previously mentioned, in one embodiment, the substrate support 107 has a process gap distance as measured vertically across the processing region 106 between the top plate assembly 407 and the substrate support 107. It is movable in the direction 110 to be adjustable within a range extending from about 2 cm to about 10 cm. Also, in one embodiment, the vertical position of the substrate support 107 relative to the top plate assembly 407, or vice versa, is adjustable during or between the plasma processing operations.

The top plate assembly 407 has a bottom surface exposed to the processing region 106 and opposite the top surface of the substrate support 107. Top plate assembly 407 includes a first plurality of plasma ports connected to supply reactive components of first plasma 101A to processing region 106. More specifically, in the embodiment of FIG. 3A, the first plurality of plasma microchambers 101 are disposed over the top surface of the top plate assembly 407, the first plurality of plasma ports being the first plurality of plasma micros. In fluid communication with the respective openings of the chambers 101. Thus, the first plurality of plasma ports function to position the openings of the first plurality of plasma microchambers 101 in fluid communication with the processing region 106. As described above with respect to FIGS. 1-2G, it should be understood that each of the first plurality of plasma microchambers corresponds to the first plasma chamber 101.

Top plate assembly 407 also includes a second plurality of plasma ports connected to supply reactive components of second plasma 102A to processing region 106. More specifically, in the embodiment of FIG. 3A, the second plurality of plasma microchambers 102 are disposed over the top surface of the top plate assembly 407, and the second plurality of plasma ports are arranged in the second plurality of plasma micros. In fluid communication with the respective openings of the chambers 102. Thus, the second plurality of plasma ports function to position the openings of the second plurality of plasma microchambers 102 in fluid communication with the processing region 106. As described above with respect to FIGS. 1-2G, it should be understood that each of the second plurality of plasma microchambers corresponds to the second plasma chamber 102.

Each of the first plurality of plasma microchambers 101 generates a first plasma 101A and is applied to one or more of the first plurality of plasma ports defined along the lower surface of the top plate assembly 407. It is defined to supply reactive components 108A of one plasma 101A. Similarly, each of the second plurality of plasma microchambers 102 generates a second plasma 102A and is one of the second plurality of plasma ports defined along the lower surface of the top plate assembly 407. It is defined above to supply the reactive components 108B of the second plasma 102A.

3B shows a horizontal cross sectional view A-A as referenced in FIG. 3A, in accordance with an embodiment of the present invention. As shown in FIG. 3B, the first and second plasmas are such that the first plurality of plasma ports are interspersed between the second plurality of plasma ports in a substantially uniform manner across the lower surface of the top plate assembly 407. The microchambers 101/102 are interspersed with each other across the top plate assembly 407. In one embodiment, the first and second plasma microchambers 101/102 are defined to have internal diameters within a range extending from about 1 cm to about 2 cm. Also, in one embodiment, the total number of first and second plasma microchambers 101/102 is about 100. In yet another exemplary embodiment, the total number of the first and second plasma microchambers 101/102 is in a range extending from about 40 to about 60, and spans the lower surface of the top plate assembly 407. The total number of first and second plasma ports is about 100.

It should be appreciated that the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 may vary between different embodiments. FIG. 3C illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is reduced, according to one embodiment of the invention. . FIG. 3D illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is increased, according to one embodiment of the invention. . 3E illustrates a variation of the horizontal cross-sectional view of FIG. 3B in which the spacing between the first and second plasma microchambers 101/102 across the top plate assembly 407 is non-uniform, in accordance with an embodiment of the present invention. do.

The above-described exemplary embodiments of the number of first and second plasma microchambers 101/102 and / or the number of plasma ports in the lower surface of the top plate assembly 407 facilitate the description of the present invention. It is provided to the extent that it is to be understood that the limitations of the present invention are not expressed in any way. In other embodiments, the plasma ports in the bottom surface of the top plate assembly 407 and / or essentially any configuration / number of the first and second plasma microchambers 101/102 may be formed on the substrate 105. It may be defined and arranged as needed to provide proper mixing of the radical and ionic components within the processing region 106 to achieve the desired plasma processing result.

The first and second plasma microchambers 101/102 are defined to operate in a simultaneous or pulsed manner. Operation of the first and second plasma microchambers 101/102 in a pulsed manner is performed by operating the first plurality of plasma microchambers 101 or the second plurality of plasma microprocessors in an alternating sequence. One of the plasma microchambers 102. In one embodiment, each of the first plurality of plasma microchambers 101 is a hollow cathode chamber, or an electron cyclotron resonant chamber, or a microwave driven chamber, or an inductively coupled chamber, or a capacitively coupled chamber. Is either one. Further, in one embodiment, each of the second plurality of plasma microchambers 102 is a hollow cathode chamber, or an electron cyclotron resonant chamber, or a microwave driven chamber, or an inductively coupled chamber, or capacitive coupling. One of the chambers.

In one exemplary embodiment, the plasma microchambers 101 or 102 that are primarily responsible for supplying the radical component to the processing region 106 are defined as microwave driven plasma microchambers. In addition, in one exemplary embodiment, the plasma microchambers 101 or 102, which are primarily responsible for supplying ionic components to the processing region 106, include hollow cathode plasma microchambers, electron cyclotron resonant plasma microchambers, capacitance It is defined as either sex coupled plasma microchambers, or one type of resonant discharge plasma microchamber. In one particular exemplary embodiment, each of the first plurality of plasma microchambers 101 is an inductively coupled plasma microchamber 101 that is primarily responsible for feeding radical components into the processing region 106. Is defined as Also in this particular exemplary embodiment, each of the second plurality of plasma microchambers 102 is a capacitively coupled plasma microchamber 102 that is primarily responsible for supplying ionic components to the processing region 106. Is defined as

The above-described exemplary embodiments of the types of the first and second plasma microchambers 101/102 are provided to facilitate the description of the present invention and do not represent the limitations of the present invention in any way. Should understand. In other embodiments, the reactive component in the processing region 106 primarily responsible for supplying the first and second plasma microchambers 101/102 to which they achieve the desired plasma processing results on the substrate 105. The first and second plasma microchambers 101/102 are essentially any type of plasma microchamber, or combination of types of plasma microchambers, as long as defined to supply the type (s) of (s). Can be defined.

The system 400 further includes a first power supply 103A defined to supply first power to the first plurality of plasma microchambers 101. The system 400 also includes a first process gas supply 104A defined to supply a first process gas to the first plurality of plasma microchambers 101. The system 400 also includes a second power supply 103B defined to supply second power to the second plurality of plasma microchambers 102. The system 400 also includes a second process gas supply 104B defined to supply a second process gas to the second plurality of plasma microchambers 102. In one embodiment, the first and second power supplies 103A / 103B are independently controllable. In one embodiment, the first and second process gas supplies 104A / 104B are independently controllable. In one embodiment, both the first and second power supplies 103A / 103B, and the first and second process gas supplies 104A / 104B are independently controllable. In one embodiment, the first power supplied to the first plurality of plasma microchambers 101 is either DC power, RF power, or a combination of DC and RF power. Further, in one embodiment, the second power supplied to the second plurality of plasma microchambers 102 is either DC power, RF power, or a combination of DC and RF power.

With respect to the supply of RF power by either of the first and second power supplies 103A / 103B, it should be understood that the supplied RF power may be independently controllable with respect to the RF power frequency and / or amplitude. In addition, each of the first and second power supplies 103A / 103B may have its RF power to ensure efficient RF power transmission to each of the first and second plurality of plasma microchambers 101/102. It should be understood that this includes each matching circuit that is transmitted. In one embodiment, the first power supplied by the first power supply 103A to each of the first plurality of plasma microchambers 101 has a frequency of any one of 2 MHz, 27 MHz, 60 MHz, or 400 kHz. The RF power is RF power, and the second power supplied by the second power supply 103B to each of the second plurality of plasma microchambers 102 is an RF power having a frequency of any one of 2 MHz, 27 MHz, 60 MHz, or 400 kHz. to be. In this embodiment, the first and second powers have at least one different frequency.

During operation of the system 400, process gases supplied by the first and second process gas supplies 104A / 104B are each within the first and second plurality of plasma microchambers 101/102. Converted into first and second plasmas 101A / 102A, respectively. Reactive species in the first and second plasmas 101A / 102A are from the first and second plurality of plasma microchambers 101/102, on the substrate support 107, ie on the substrate support 107. When placed in the substrate, it moves to the substrate processing region 106 on the substrate 105.

In one embodiment, upon entering the substrate processing region 106 from the first and second plurality of plasma microchambers 101/102, the used process gas flows through the peripheral vents 427 and exits. It is pumped out through the discharge ports 429 by the pump 431. In one embodiment, the flow throttling device 433 is provided to control the flow rate of the process gas used from the substrate processing region 106. In one embodiment, the flow throttling device 433 is defined as a ring structure that is movable toward and away from the peripheral vents 427, as indicated by arrows 435.

A large number of different types of small plasma sources, i.e., a second plurality of systems, for the system 400 to transfer the reactive component flux coupled from each type of plasma source to the substrate 105 in a substantially uniform manner. It should be appreciated that a large number of one type of small plasma sources, ie, the first plurality of plasma microchambers 101, interspersed between the plasma microchambers 102 are used. In one embodiment, one type of plasma source produces greater density of radical components than the ionic components, and another type of plasma source produces greater density of ionic components than the radical components. Thereby providing independent control of the ion and radical concentrations in the processing region 106.

4A shows another system 500 for substrate plasma processing, in accordance with an embodiment of the present invention. The system 500 includes the system of FIG. 3A with respect to the chamber 401, the substrate support 107, the peripheral vents 427, the flow throttling device 433, the discharge ports 429, and the discharge pump 431. Essentially equivalent to (400). However, the system 500 includes a change on the first and second plurality of plasma microchambers 101/102 disposed over the top plate assembly 407A, as described above with respect to FIG. 3A. Specifically, instead of including many instances of the first and second plasma microchambers 101/102 to supply their respective reactive components to the plasma ports in the top plate assembly 407, the system 500 ) Produces a first plasma 101A and a large first plasma chamber 501 defined to supply reactive components of the first plasma 101A to each of the first plurality of plasma ports in the top plate assembly 407. ). Similarly, system 500 is defined to generate a second plasma 102A and to supply the reactive components of second plasma 102A to each of the second plurality of plasma ports in top plate assembly 407. A second plasma chamber 502.

In one embodiment, the system 500 includes a single instance of the first plasma chamber 501 for supplying reactive components of the first plasma 101A to the processing region 106. Also in this embodiment, the system 500 includes a single instance of the second plasma chamber 501 for supplying reactive components of the second plasma 102A to the processing region 106. In other embodiments, system 500 can include more than one instance of first plasma chamber 501 for supplying reactive components of first plasma 101A to processing region 106, Here, each instance of the first plasma chamber 501 is fluidly connected to a number of plasma ports in the top plate assembly 407. Similarly, in other embodiments, system 500 may include more than one instance of second plasma chamber 502 for supplying reactive components of second plasma 102A to processing region 106 and Here, each instance of the second plasma chamber 502 is fluidly connected to a number of plasma ports in the top plate assembly 407.

It should also be understood that the features and operating conditions previously described with respect to the first plasma chamber 101 of FIGS. 2A-2D are equally applicable to the first plasma chamber 501. It should also be understood that the features and operating conditions previously described with respect to the second plasma chamber of FIGS. 2A-2D are equally applicable to the second plasma chamber 502.

The plasma ports in the top plate assembly 407 fluidly connected to the first plasma chamber 501 are substantially uniform with the plasma ports in the top plate assembly 407 fluidly connected to the second plasma chamber 502. Scattered across the top plate assembly 407 in a manner. 4B illustrates a horizontal cross sectional view B-B as referenced in FIG. 4A, in accordance with an embodiment of the present invention. As shown in FIG. 4B, the outputs of the first and second plasma chambers 501/502 are interspersed with each other across the top plate assembly 407 in a substantially uniform manner.

It should be appreciated that the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407 may vary between different embodiments. 4C is a horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407 is reduced, in accordance with an embodiment of the present invention. The variant is shown. 4D is a horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407 is increased, in accordance with an embodiment of the present invention. The variant is shown. 4E is a horizontal cross-sectional view of FIG. 4B in which the spacing between the plasma ports associated with the first and second plasma chambers 501/502 across the top plate assembly 407 is nonuniform, in accordance with an embodiment of the present invention. Shows a variation of.

In one embodiment, the first plasma chamber 501 is primarily responsible for supplying radical components to the processing region 106, and the second plasma chamber 502 is responsible for supplying ionic components to the processing region 106. Mainly in charge In this embodiment, the large plasma generating volume of the first plasma chamber 501 is used to feed a plurality of radical component dispense ports within the top plate assembly 407. Also in this embodiment, the large plasma generating volume of the second plasma chamber 502 is used to feed the plurality of ionic component dispense ports in the top plate assembly 407. In this embodiment, multiple radical and ion dispense ports are interspersed with each other to provide a substantially uniform radical / ion mixture within the processing region 106.

The system 500 also includes a first power supply 103A defined to supply power to the first plasma chamber 501, and a first process gas supply 104A defined to supply process gas to the first plasma chamber. It includes. The system 500 also includes a second power supply 103B defined to supply power to the second plasma chamber 502, and a second process gas defined to supply process gas to the second plasma chamber 502. Supply portion 104B. Regarding system 400, in system 500, either one of the first and second power supplies 103A / 103B is independently controllable, or the first and second process gas supplies 104A / 104B are Independently controllable, or both the first and second power supplies 103A / 103B and the first and second process gas supplies 104A / 104B are independently controllable. Additionally, in one embodiment, the first and second plasma chambers 501/502 of the system 500 are defined to operate in either a simultaneous manner or a pulsed manner. When operated in a pulsed manner, the first plasma chamber 501 or the second plasma chamber 502 is operated at a given time, and the first and second plasma chambers 501/502 are operated in an alternating sequence. .

5A shows another system 600 for substrate plasma processing, in accordance with an embodiment of the present invention. System 600 is essentially equivalent to system 400 of FIG. 3A with respect to chamber 401 and substrate support 107. However, the system 600 does not support the first set of plasma microchambers 605 and the second set of plasma microchambers 603 formed in the discharge channels 607, as previously described with respect to FIG. 3A. Replace the upper plate assembly 601 and the upper plate assembly 407 that includes.

System 600 includes a chamber 401 having a top structure 401B, a bottom structure 401C, and sidewalls 401A extending between the top and bottom structures 401B / 401C. The chamber 401 also includes a processing region 106. The substrate support 107 is disposed within the chamber 401 and has a top surface defined to support the substrate 105 at an exposure to the processing region 106. The top plate assembly 601 is disposed in the chamber 401 above the substrate support 107. Top plate assembly 601 is exposed to processing region 106 and has a bottom surface opposite the top surface of substrate support 107.

The top plate assembly 601 includes a first set of plasma microchambers 605 each formed with a bottom surface of the top plate assembly 601. The top plate assembly 601 also has a first network of gas supply channels 611 formed to flow a first process gas from the first gas supply 104A to each of the first set of plasma microchambers 605. It includes. The supply of the first process gas to the first network of gas supply channels 611 is indicated by lines 611A in FIG. 5A. Each of the first set of plasma microchambers 605 is connected to receive power from the first power supply 103A and for converting the first process gas into a first plasma at an exposure to the processing region 106. It is defined to use this received power. The supply of first power to the first set of plasma microchambers 605 is also indicated by lines 611A in FIG. 5A.

The first set of power delivery components 615 are each disposed within the top plate assembly 601 with respect to the first set of plasma microchambers 605. Each of the first set of power delivery components 615 receives the first power from the first power supply 103A and applies the first power to its associated one of the first set of plasma microchambers 605. Connected to supply. In one embodiment, each of the first set of power delivery components 615 is defined as a coil configured to circumscribe a given one of the first set of plasma microchambers 605. However, it should be understood that in other embodiments, the first set of power delivery components 615 may be defined in ways other than a coil. For example, in one embodiment, each of the first set of power delivery components 615 is configured and arranged to deliver the first power to its associated one of the first set of plasma microchambers 605. It is defined as one or more electrodes.

The top plate assembly 601 also includes a set of outlet channels 607 formed through the bottom surface of the top plate assembly 601 to provide removal of the exhaust gases from the processing region 106. Each outlet channel 607 is fluidly connected to an outlet fluid delivery system 607A, such as channels, tubing, plenum (s), etc., which in turn is fluidly connected to an outlet pump 619. When operated, the discharge pump 619 applies a suction through the discharge fluid delivery system 607A to a set of discharge channels 607 to remove process gases from the processing region 106. As indicated by arrows 617, process gases flowing through the first set of plasma microchambers 605 into the processing region 106 toward the discharge channels 607 and into the discharge channels 607. Withdrawn.

The second set of plasma microchambers 603 are each formed inside a set of discharge channels 607. The second network of gas supply channels 609 is formed to flow a second process gas from the second process gas supply 104B to each of the second set of plasma microchambers 603. The supply of the second process gas to the second network of gas supply channels 609 is indicated by lines 609A of FIG. 5A. Each of the second set of plasma microchambers 603 is connected to receive power from the second power supply 103B and converts the second process gas into a second plasma at an exposure to the processing region 106. Is defined to use this received power. The supply of second power to the second set of plasma microchambers 603 is also indicated by lines 609A of FIG. 5A.

The second set of power delivery components 613 are each disposed within the top plate assembly 601 with respect to the second set of plasma microchambers 603. Each of the second set of power delivery components 613 receives a second power from the second power supply 103B and applies a second power to its associated one of the second set of plasma microchambers 603. Connected to supply. In one embodiment, each of the second set of power delivery components 613 is defined as a coil formed to define a given one of the second set of plasma microchambers 603. However, it should be understood that in other embodiments, the second set of power delivery components 613 may be defined in ways other than a coil. For example, in one embodiment, each of the second set of power delivery components 613 is configured and arranged to deliver a second power to its associated one of the second set of plasma microchambers 603. It is defined as one or more electrodes.

The electrode 112 in the substrate support 107 is defined to apply a bias voltage across the processing region 106 between the substrate support 107 and the lower surface of the top plate assembly 601. Process gases flowing into the second set of plasma microchambers 603, ie, through the second network of gas supply channels 609 to the discharge channels 607, are drawn off from the processing region 106 and processed Do not enter area 106. Thus, since the second set of plasma microchambers 603 are formed in the discharge channels 607, the radicals formed in the second set of plasma microchambers 603 are discharged through the discharge channels 607. It will follow the gas flow path. However, ions formed in the second set of plasma microchambers 603 will be attracted to the processing region 106 by a bias voltage applied across the processing region 106 by the electrode 112. In this way, the second set of plasma microchambers 603 can operate as a substantially pure ion source for the processing region 106.

It should be understood that the first set of plasma microchambers 605 are interspersed with the second set of plasma microchambers 603 in a substantially uniform manner across the bottom surface of the top plate assembly 601. In this manner, reactive radical components from the first set of plasma microchambers 605 are transferred from the second set of plasma microchambers 603 in the processing region 106 before reaching the substrate 105. It may be mixed with the ionic components in a substantially uniform manner. 5B shows a horizontal cross sectional view C-C as referenced in FIG. 5A, in accordance with an embodiment of the present invention. As shown in FIG. 5B, the first and second sets of plasma microchambers 605/603 are distributed in a substantially uniform manner over the bottom surface of the top plate assembly 601.

It should be appreciated that the spacing between the first and second sets of plasma microchambers 605/603 across the bottom surface of the top plate assembly 601 may vary between different embodiments. 5C is a horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers 605/603 across the bottom surface of the top plate assembly 601 is reduced, in accordance with an embodiment of the present invention. Shows a variation of. 5D is a horizontal cross-sectional view of FIG. 5B in which the spacing between the first and second sets of plasma microchambers 605/603 across the bottom surface of the top plate assembly 601 is increased, in accordance with an embodiment of the present invention. Shows a variation of. 5E is the horizontal of FIG. 5B where the spacing between the first and second sets of plasma microchambers 605/603 across the bottom surface of the top plate assembly 601 is non-uniform, in accordance with an embodiment of the present invention. The deformation of the cross section is shown.

With respect to the embodiments of FIGS. 2A-2G, 3A-3E, 4A-4E, in the embodiments of FIGS. 5A-5E, the first and second power supplies 103A / 103B and the first The first and second gas supplies 104A / 104B can be controlled in various ways. In one embodiment, the first and second power supplies 103A / 103B are independently controllable. In one embodiment, the first and second process gas supplies 104A / 104B are independently controllable. In yet another embodiment, both the first and second power supplies 103A / 103B and the first and second process gas supplies 104A / 104B are independently controllable. Next, it should be understood that the first and second sets of plasma microchambers 605/603 are defined to operate in either a simultaneous manner or a pulsed manner. When operated in a pulsed manner, either the first set of plasma microchambers 605 or the second set of plasma microchambers 603 are operated at a given time and the first and second sets of plasma microchambers. Chambers 605/603 are operated in an alternating sequence.

Given the embodiment of FIG. 5A, drivers that cause the plasma to escape from its generating region (eg, bipolar diffusion) are driven into the plasma region by inverting the radicals in the process gas flow direction. It should be recognized that the opposite can be done with drivers that cause them to escape. Adding top pumping to the ion sources, i.e., the second set of plasma microchambers 603, provides both greater ion / neutral flux ratio and more efficient ion extraction (wider apertures) from the plasma source itself. To facilitate. Additionally, in one embodiment, FIG. 5A, as described above with respect to the embodiments of FIGS. 3A and 4A, to enable ambient exhaust flow in addition to the top exhaust flow through outlet channels 607. It is to be understood that the chamber 401 may be additionally equipped with peripheral vents 427, flow throttling device 433, discharge ports 429, and discharge pump 431.

In various embodiments described herein, different ion and radical plasma sources can be process controlled in terms of gas flow, gas pressure, power frequency, power amplitude, on duration, off duration, and timing sequence. In addition, different types of plasma sources may be pulsed to mitigate communication between neighboring plasma sources. Two different plasma source types may also be operated using different gas mixtures to achieve conditions of higher flux of ions from one plasma source and higher flux of radicals from another plasma source. Using a mixed array of ion and radical plasma sources, in one embodiment, each plasma source can be connected to its own separately controlled power and gas supplies. Further, in other embodiments, all ion plasma sources in the mixed array may be connected to a common gas supply and a common power supply, and all radical plasma sources in the mixed array may be connected to other common gas supplies and other common power supplies. Can be.

In one embodiment, the system 600 of FIG. 5A represents a semiconductor substrate processing system with a plate assembly 601 having a process-side surface exposed to the plasma processing region 601. Plate assembly 601 includes an exhaust channel 607 formed through the process-side surface of plate assembly 601 to provide removal of exhaust gases from plasma processing region 601. The plasma microchamber 603 is formed inside the discharge channel. The gas supply channel 609 is formed through the plate assembly 601 to flow the process gas into the plasma microchamber 603 in the discharge channel 607. The power delivery component 613 is formed in the plate assembly 601 to transmit power to the plasma microchamber region 603 for converting the process gas into a plasma in the plasma microchamber 603 in the discharge channel 607. .

In one embodiment, the power supplied to the power delivery component 613 is either DC power, RF power, or a combination of DC and RF power. In one embodiment, the power supplied to the power delivery component 613 is RF power with a frequency of any of 2 MHz, 27 MHz, 60 MHz, or 400 kHz. In one embodiment, the power delivery component 613 is defined as a coil formed in the plate assembly 601 to define the plasma microchamber 603 in the discharge channel 607.

The system 600 includes an electrode disposed outside of the plate assembly 601 that, when energized, causes ions to be attracted from the plasma microchamber 603 in the discharge channel 607 into the plasma processing region 106. 112) also. In one embodiment, the electrode 112 is disposed within the substrate support 107, and the substrate support 107 is disposed to support the substrate 105 at an exposure to the plasma processing region 106. Also, in one embodiment, the discharge channel 607 is defined to remove gases from the processing region 106 in a direction substantially perpendicular to and away from the surface of the substrate support 107 on which the substrate 105 will be supported. do.

6 shows a flowchart of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention. The method includes an operation 701 for placing the substrate 105 on the substrate support 107 at an exposure to the processing region 106. The method also includes an operation 703 for generating a first plasma 101A of a first plasma type. The method also includes an operation 705 for generating a second plasma 102A of a second plasma type different from the first plasma type. The method also includes an operation for supplying reactive components 108A / 108B of both the first and second plasmas 101A / 102A to the processing region 106 to affect the processing of the substrate 105. 707).

The method also uses an operation for using the first power and the first process gas to generate the first plasma 101A, and using the second power and the second process gas to generate the second plasma 102A. Include. In one embodiment, the method includes independently controlling the first and second powers or one of the first and second process gases, or both the first and second powers and the first and second process gases. For the operation. Further, in one embodiment, the first power is either DC power, RF power, or a combination of DC and RF power, and the second power is either DC power, RF power, or a combination of DC and RF power. In one exemplary embodiment, the first power is RF power having a first frequency of any of 2 MHz, 27 MHz, 60 MHz, or 400 kHz, and the second power is a second of any of 2 MHz, 27 MHz, 60 MHz, or 400 kHz It is an RF power having a frequency, and the second frequency is different from the first frequency.

In the method, the first plasma 101A is generated to have a first ratio of radical density to ion density, and the second plasma 102A is generated to have a second ratio of radical density to ion density. The second ratio of radical density to ion density in the second plasma 102A is different from the first ratio of radical density to ion density in the first plasma 101A. In the method, reactive components from both the first and second plasmas 101A / 102A are supplied in a substantially uniform manner throughout the processing region 106 at an exposure to the substrate 105. In addition, in various embodiments, reactive components from the first and second plasmas 101A / 102A are produced and supplied in either a simultaneous manner or a pulsed manner. The generation and supply of the first and second plasmas 101A / 102A in a pulsed manner is the reactive component of either the first plasma 101A or the second plasma 102A at a given time and in an alternating sequence. Their production and supply.

The method also supplements electrons to increase ion extraction from one or both of the first and second plasmas 101A / 102A into the processing region 106, for example, as described with respect to FIG. 2D. May include an operation for generating the data. In addition, the method supports a substrate support to attract ions from one or both of the first and second plasmas 101A / 102A towards the substrate 105, as described herein with respect to the operation of the electrode 112. May include an operation for applying a bias voltage from 107 to the processing region 106.

Additionally, in one embodiment, the method further comprises that the reactive components of the first port and the second plasma 102A are supplied to the processing region 106 where the reactive components of the first plasma 101A are supplied to the processing region 106. Operation for positioning the baffle structure 109 between the second ports to be supplied. In this embodiment, the method also includes one or both of fluid communication and power communication between the first and second ports from which reactive components of the first and second plasmas 101A / 102A are emitted to the processing region 106. In order to limit, the operation of controlling the position of the baffle structure 109 relative to the substrate support 107 can be included.

7 shows a flowchart of a method for processing a semiconductor substrate, in accordance with an embodiment of the present invention. The method includes an operation 801 for placing the substrate 105 on the substrate support 107 in an exposure to the processing region 106. The method also includes an operation 803 for operating the first set of plasma microchambers 605 in an exposure to the processing region 106, whereby the first set of plasma microchambers 605. Each generates a first plasma and supplies reactive components of the first plasma to the processing region 106. The first set of plasma microchambers 605 is located above the processing region 106 opposite the substrate support 107. The method also includes an operation 805 for operating the second set of plasma microchambers 603 in an exposure to the processing region 106, whereby the second set of plasma microchambers 603. Each generates a second plasma and supplies reactive components of the second plasma to the processing region 106. The second plasma is different from the first plasma. In addition, the second set of plasma microchambers 603 is located above the processing region 106 opposite the substrate support 107 and is substantially uniform between the first set of plasma microchambers 605. Scattered in a way.

The method includes operations for supplying first power to a first set of plasma microchambers 605, operations for supplying a first process gas to a first set of plasma microchambers 605, a second set of And supplying a second power to the plasma microchambers 603, and supplying a second process gas to the second set of plasma microchambers 603. In various embodiments, the method independently of either the first and second powers or the first and second process gases, or both the first and second powers and the first and second process gases. It includes an operation for controlling. In one embodiment, the first power is either DC power, RF power, or a combination of DC and RF power, and the second power is either DC power, RF power, or a combination of DC and RF power. In one exemplary embodiment, the first power is RF power having a first frequency of any of 2 MHz, 27 MHz, 60 MHz, or 400 kHz, and the second power is a second of any of 2 MHz, 27 MHz, 60 MHz, or 400 kHz It is an RF power having a frequency, and the second frequency is different from the first frequency.

The method includes a set of outlet channels 607 defined to remove gases from the processing region 107 in a direction substantially perpendicular to and away from the top surface of the substrate support 107 on which the substrate 105 is disposed. Further comprising removing exhaust gases from the processing region 106 via. In one embodiment, the second set of plasma microchambers 603 are each defined within a set of discharge channels 607.

The method includes operating a first set of plasma microchambers 605 to produce a first plasma to have a first ratio of radical density to ion density, and a second ratio of radical density to ion density. Operating the second set of plasma microchambers 603 to produce a second plasma, wherein the second ratio of radical density to ion density in the second plasma is determined in the first plasma. It is different from the first ratio of radical density to ion density. Further, in the embodiment where the second set of plasma microchambers 603 are each defined inside a set of discharge channels 607, the first plasma has a higher radical density than the ion density and the second plasma Has a higher ion density than the radical density.

In one embodiment, the method includes the operation of the first and second sets of plasma microchambers 605/603 in a simultaneous manner. In another embodiment, the first and second sets of plasma microchambers 605/603 are configured such that the first set of plasma microchambers 605 or the second set of plasma microchambers 603 are at a given time. It is operated in a pulsed manner in which the first and second sets of plasma microchambers 605/603 are operated in an alternating sequence. Additionally, the method may comprise one of the first and second plasmas generated in the first and second sets of plasma microchambers 605/603, respectively, as described herein with respect to electrode 112 or Operation to apply a bias voltage across the processing region 106 from the substrate support 107 to attract ions from both toward the substrate 105.

Although the present invention has been described in terms of several embodiments, it will be appreciated that those skilled in the art will recognize various modifications, additions, substitutions, and equivalents of the present invention upon reading the previous specification and reviewing the drawings. Accordingly, it is intended that the present invention include all such modifications, additions, substitutions, and equivalents as are within the true spirit and scope of the present invention.

Claims (55)

A semiconductor substrate processing system,
A substrate support defined to support the substrate at an exposure to the processing region;
A first plasma chamber defined to generate a first plasma and to supply reactive components of the first plasma to the processing region; And
A second plasma chamber defined to generate a second plasma and to supply reactive components of the second plasma to the processing region,
And the first and second plasma chambers are defined to be controlled independently. The method of claim 1,
A first power supply defined to supply a first power to the first plasma chamber;
A first process gas supply defined to supply a first process gas to the first plasma chamber;
A second power supply defined to supply a second power to the second plasma chamber; And
And a second process gas supply defined to supply a second process gas to the second plasma chamber. 3. The method of claim 2,
The first and second power supplies are independently controllable, or the first and second process gas supplies are independently controllable, or the first and second power supplies and the first and second process gas supplies All of which are independently controllable. 3. The method of claim 2,
The first power is any one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
And the second power is any one of DC power, RF power, or a combination of DC power and RF power. The method of claim 1,
The first and second plasma chambers are defined to operate in a simultaneous or pulsed manner,
The pulsed scheme comprises the first plasma chamber or the second plasma chamber operating at a given time and in an alternating sequence. The method of claim 1,
And the substrate support is defined to be movable in a direction substantially perpendicular to the top surface of the substrate support on which the substrate is to be supported. The method of claim 1,
One or both of the first and second plasma chambers are defined to have an energizable plasma outlet region defined to provide supplemental electron generation to increase ion extraction. 3. The method of claim 2,
And the substrate support comprises an electrode defined to apply a bias voltage across the processing region between the substrate support and the first and second plasma chambers. The method of claim 1,
Further comprising a baffle structure disposed between the first and second plasma chambers so as to extend from the first and second plasma chambers toward the substrate support,
And the baffle structure is defined to reduce fluid communication between the first and second plasma chambers. The method of claim 1,
And a discharge channel formed between said first and second plasma chambers such that said substrate extends away from said processing region in a direction substantially perpendicular to a top surface of said substrate support. 11. The method of claim 10,
Further comprising a baffle structure disposed in said discharge channel between said first and second plasma chambers for extending from said first and second plasma chambers towards said substrate support,
The baffle structure is defined to reduce fluid communication between the first and second plasma chambers, the baffle structure being less than the outlet channel to provide an outlet flow through the outlet channel around the baffle structure. A semiconductor substrate processing system that is sized small. A semiconductor substrate processing system,
A chamber having a top structure, a bottom structure, and sidewalls extending between the top structure and the bottom structure, the chamber surrounding a processing area;
A substrate support disposed in the chamber and defined to support a substrate at an exposed portion to the processing region; And
A top plate assembly disposed in the chamber above the substrate support, the top plate assembly having a bottom surface exposed to the processing region and opposite the top surface of the substrate support, the top plate assembly being reactive to the first plasma A first plurality of plasma ports connected to supply components to the processing region, wherein the top plate assembly includes a second plurality of plasma ports connected to supply reactive components of a second plasma to the processing region, And the top plate assembly. 13. The method of claim 12,
And the substrate support is defined to be movable in a direction substantially perpendicular to the top surface of the substrate support on which the substrate is to be supported. 13. The method of claim 12,
And the substrate support comprises an electrode defined to apply a bias voltage across the processing region between the substrate support and the bottom surface of the top plate assembly. 13. The method of claim 12,
First plurality of plasma microchambers respectively defined to generate the first plasma and to supply reactive components of the first plasma to one or more of the first plurality of plasma ports; And
And a second plurality of plasma microchambers, each defined to generate the second plasma and to supply reactive components of the second plasma to one or more of the second plurality of plasma ports. The method of claim 15,
A first power supply defined to supply a first power to the first plurality of plasma microchambers;
A first process gas supply unit defined to supply a first process gas to the first plurality of plasma microchambers;
A second power supply defined to supply a second power to the second plurality of plasma microchambers; And
And a second process gas supply defined to supply a second process gas to the second plurality of plasma microchambers. 17. The method of claim 16,
The first and second power supplies are independently controllable, or the first and second process gas supplies are independently controllable, or the first and second power supplies and the first and second process gas supplies All of which are independently controllable. 13. The method of claim 12,
A first plasma chamber defined to generate the first plasma and to supply reactive components of the first plasma to each of the first plurality of plasma ports; And
And a second plasma chamber defined to generate the second plasma and to supply reactive components of the second plasma to each of the second plurality of plasma ports. The method of claim 18,
A first power supply defined to supply a first power to the first plasma chamber;
A first process gas supply defined to supply a first process gas to the first plasma chamber;
A second power supply defined to supply a second power to the second plasma chamber; And
And a second process gas supply defined to supply a second process gas to the second plasma chamber. The method of claim 19,
The first and second power supplies are independently controllable, or the first and second process gas supplies are independently controllable, or the first and second power supplies and the first and second process gas supplies All of which are independently controllable. A method for processing a semiconductor substrate,
Placing the substrate on the substrate support at an exposure to the processing region;
Generating a first plasma of a first plasma type;
Generating a second plasma of a second plasma type different from the first plasma type; And
Supplying reactive components of both the first and second plasmas to the processing region to affect processing of the substrate. 22. The method of claim 21,
The first plasma is generated to have a first ratio of radical density to ion density,
The second plasma is generated to have a second ratio of radical density to ion density,
And the second ratio of radical density to ion density in the second plasma is different from the first ratio of radical density to ion density in the first plasma. 22. The method of claim 21,
Using a first power and a first process gas to generate the first plasma; And
Using the second power and a second process gas to generate the second plasma. 24. The method of claim 23,
And independently controlling the first and second powers, or the first and second process gases, or both the first and second powers and the first and second process gases. , A method for processing a semiconductor substrate. 24. The method of claim 23,
The first power is any one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
And the second power is any one of DC power, RF power, or a combination of DC power and RF power. 22. The method of claim 21,
Reactive components from both the first and second plasmas are supplied in a substantially uniform manner throughout the processing region at an exposure to the substrate. 22. The method of claim 21,
Reactive components from the first and second plasmas are produced and supplied in either a simultaneous manner or a pulsed manner,
Wherein the pulsed manner comprises the generation and supply of reactive components of either the first plasma or the second plasma at a given time and in an alternating sequence. 22. The method of claim 21,
Generating supplemental electrons to increase ion extraction from one or both of the first and second plasmas into the processing region. 22. The method of claim 21,
Applying a bias voltage across the processing region from the substrate support to attract ions from one or both of the first and second plasmas towards the substrate. 22. The method of claim 21,
Positioning a baffle structure between a first port through which the first plasma is supplied to the processing region and a second port through which the second plasma is supplied to the processing region. A semiconductor substrate processing system,
A plate assembly having a process-side surface exposed to the plasma processing region;
An exhaust channel formed through the process-side surface of the plate assembly to provide removal of exhaust valences from the plasma processing region;
A plasma microchamber formed inside said discharge channel;
A gas supply channel formed through said plate assembly for flowing a process gas into said plasma microchamber in said discharge channel; And
And a power transfer component formed in the plate assembly to transmit power to the plasma microchamber to convert the process gas into a plasma in the plasma microchamber in the discharge channel. 32. The method of claim 31,
And, when energized, an electrode disposed outside of the plate assembly that causes ions to be attracted from the plasma microchamber in the discharge channel to the plasma processing region. 33. The method of claim 32,
Further comprising a substrate support disposed to support a substrate at an exposure to the plasma processing region,
And the electrode is disposed within the substrate support. 34. The method of claim 33,
And the discharge channel is defined to remove gases from the processing region in a direction substantially perpendicular to and away from the surface of the substrate support on which the substrate is to be supported. 32. The method of claim 31,
A power supply defined to supply the power to the power delivery component; And
And a process gas supply defined to supply a process gas to the gas supply channel. 32. The method of claim 31,
And the power delivery component is defined as a coil formed in the plate assembly to circumscribe the plasma microchamber in the discharge channel. A semiconductor substrate processing system,
A chamber having a top structure, a bottom structure, and sidewalls extending between the top structure and the bottom structure, the chamber comprising a processing area;
A substrate support disposed within the chamber, the substrate support having a top surface defined to support the substrate at an exposure to the processing region;
A top plate assembly disposed in the chamber above the substrate support, the top plate assembly comprising the top plate assembly having a bottom surface exposed to the processing region and opposite the top surface of the substrate support,
The top plate assembly,
A first set of plasma microchambers each formed into a bottom surface of the top plate assembly,
A first network of gas supply channels formed to flow a first process gas into each of the first set of plasma microchambers, each of the first set of plasma microchambers being in the exposed portion to the processing region; A first network of gas supply channels, defined to convert one process gas into a first plasma,
One channel of exhaust channels formed through the lower surface of the top plate assembly to provide removal of the exhaust gases from the processing region,
A second set of plasma microchambers respectively formed within said set of discharge channels, and
A second network of gas supply channels formed to flow a second process gas into each of the second set of plasma microchambers, each of the second set of plasma microchambers being in the exposed portion to the processing region; And a second network of gas supply channels, defined to convert a second process gas into a second plasma. 39. The method of claim 37,
Wherein the first set of plasma microchambers are interspered with the second set of plasma microchambers in a substantially uniform manner across the bottom surface of the top plate assembly. 39. The method of claim 37,
A first power supply defined to supply first power to the first set of plasma microchambers;
A first process gas supply defined to supply a first process gas to the first network of gas supply channels;
A second power supply defined to supply a second power to the second set of plasma microchambers; And
And a second process gas supply defined to supply a second process gas to the second network of gas supply channels. 40. The method of claim 39,
The first and second power supplies are independently controllable, or the first and second process gas supplies are independently controllable, or the first and second power supplies and the first and second process gas supplies All of which are independently controllable. 40. The method of claim 39,
A first set of power delivery components respectively disposed within the top plate assembly for the first set of plasma microchambers, each of the first set of power delivery components being configured to draw the first power from the first power supply; The first set of power delivery components connected to receive; And
A second set of power delivery components respectively disposed within the top plate assembly for the second set of plasma microchambers, each of the second set of power delivery components being configured to draw the second power from the second power supply; And the second set of power delivery components connected to receive. 39. The method of claim 37,
The first and second sets of plasma microchambers are defined to operate in a simultaneous or pulsed manner,
The pulsed scheme comprises either the first set of plasma microchambers or the second set of plasma microchambers operating at a given time and in an alternating sequence. 39. The method of claim 37,
And the substrate support is defined to be movable in a direction extending vertically between an upper surface of the substrate support on which the substrate is to be supported and a lower surface of the top plate assembly. 39. The method of claim 37,
And the substrate support comprises an electrode defined to apply a bias voltage across the processing region between the substrate support and the bottom surface of the top plate assembly. A method for processing a semiconductor substrate,
Placing the substrate on the substrate support at an exposure to the processing region;
Operating a first set of plasma microchambers in an exposure to the processing region, wherein each of the first set of plasma microchambers generates a first plasma and directs reactive components of the first plasma to the processing region. The first set of plasma microchambers, wherein the first set of plasma microchambers are located above the processing region opposite from the substrate support; And
Operating a second set of plasma microchambers in an exposure to the processing region, wherein each of the second set of plasma microchambers generates a second plasma and directs reactive components of the second plasma to the processing region. Wherein the second plasma is different from the first plasma, and wherein the second set of plasma microchambers is located above the processing region opposite from the substrate support and between the first set of plasma microchambers. Operating the second set of plasma microchambers, interspersed in a substantially uniform manner. 46. The method of claim 45,
Supplying first power to the first set of plasma microchambers;
Supplying a first process gas to the first set of plasma microchambers;
Supplying a second power to the second set of plasma microchambers; And
Supplying a second process gas to the second set of plasma microchambers. 47. The method of claim 46,
And independently controlling the first and second powers, or the first and second process gases, or both the first and second powers and the first and second process gases. , A method for processing a semiconductor substrate. 47. The method of claim 46,
The first power is any one of direct current (DC) power, radio frequency (RF) power, or a combination of DC power and RF power,
And the second power is any one of DC power, RF power, or a combination of DC power and RF power. 47. The method of claim 46,
Removing the exhaust gases from the processing region through a set of exhaust channels defined to remove gases from the processing region in a direction substantially away from the top surface and substantially perpendicular to the top surface of the substrate support on which the substrate is disposed; Further comprising a semiconductor substrate. The method of claim 49,
And the second set of plasma microchambers are each defined inside the set of discharge channels. 46. The method of claim 45,
Operating the first set of plasma microchambers to produce the first plasma to have a first ratio of radical density to ion density; And
Operating said second set of plasma microchambers to produce said second plasma to have a second ratio of radical density to ion density, said second ratio of radical density to ion density in said second plasma. And operating the second set of plasma microchambers, wherein the ratio is different from the first ratio of radical density to ion density in the first plasma. 52. The method of claim 51,
The first plasma has a higher radical density than the ion density,
And the second plasma has an ion density higher than the radical density. 46. The method of claim 45,
Wherein the first and second sets of plasma microchambers are operated in a simultaneous manner. 46. The method of claim 45,
The first and second sets of plasma microchambers are operated in a pulsed manner,
Wherein the pulsed manner comprises the operation of either the first set of plasma microchambers or the second set of plasma microchambers at a given time and in an alternating sequence. 46. The method of claim 45,
Applying a bias voltage across the processing region from the substrate support to attract ions from one or both of the first and second plasmas towards the substrate.

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