JP2008146994A - Treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treatment device capable of executing processing high in productivity such as processing efficiency and processing accuracy by executing a plasma treatment and blasting without changing the device. <P>SOLUTION: This treatment device 1 is provided with a plasma treatment device 11, a blasting device 21 and a workpiece installation part 100 for installing a workpiece 10 thereon, and executes a plasma treatment and blasting to the workpiece 10 installed on the workpiece installation part 100 at the same time or in a predetermined order by using the plasma treatment device 11 and the blasting device 21. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a processing apparatus.

When processing the surface of a material, a reactive gas is supplied to an electrode to which a voltage or a high frequency is applied, a radical based on the reactive gas is generated, and a product generated by a radical reaction between the radical and the workpiece is removed. A method of processing is used.
On the other hand, microblasting that achieves high-precision micromachining is performed using a brittle fracture principle by spraying a fine injection material of several μm to several tens of μm onto a workpiece at high speed together with compressed air (for example, non- Patent Document 1).

In recent years, micromachine parts and integrated sensors have entered the stage of practical application. Ceramics are often used for semiconductor device parts. Therefore, there is a demand for highly productive micromachining technology for hard and brittle materials that are relatively difficult to machine, such as glass and ceramics including silicon.
Many of these hard and brittle materials have high hardness, high brittleness, and high melting point. Therefore, conventional thermal and chemical processing techniques such as etching, laser, electron beam, electric discharge machining, and electrolytic machining have insufficient points in processing efficiency, accuracy, and processing quality. Further, in machining such as ultrasonic machining, grinding, and polishing, there are insufficient points in machining efficiency and accuracy.

Moriyasu Izawa, “Trends in high-performance blasting”, [online], [searched on September 29, 2006], Internet <URL: http://brator.sinto.co.jp/mbron2koukinou.html>

  An object of the present invention is to provide a processing apparatus capable of performing processing with high productivity such as processing efficiency and processing accuracy by performing plasma processing and blast processing without changing the apparatus.

Such an object is achieved by the present invention described below.
The processing apparatus of the present invention includes a plasma processing apparatus, a blast processing apparatus, and a work installation unit for installing a work,
The plasma processing and the blast processing are performed simultaneously or in a predetermined order on the workpiece installed in the workpiece installation section using the plasma processing apparatus and the blast processing apparatus.
Thereby, since plasma processing and blast processing can be performed without changing the apparatus, processing with high productivity can be performed on the surface to be processed of the workpiece.

In the processing apparatus of the present invention, the plasma processing apparatus includes a pair of electrodes,
A power supply circuit comprising a power supply for applying a voltage between the pair of electrodes;
Gas supply means for supplying a processing gas for generating plasma between the pair of electrodes;
A processing gas ejection part for ejecting the processing gas toward the surface to be processed of the workpiece,
By applying a voltage between the pair of electrodes, the processing gas is activated to generate the plasma, and the surface to be processed of the workpiece is plasma-processed by the plasma,
The blast treatment device includes an injection material ejection unit that ejects an injection material toward the surface to be processed of the workpiece,
An injection material supply means for supplying the injection material to the injection material ejection part,
It is preferable that the surface to be processed of the workpiece is blasted by ejecting the spray material from the spray material ejection portion.
Thereby, plasma processing and blast processing can be performed without changing the apparatus, so that the surface to be processed of the workpiece can be processed efficiently and in a short time.

In the processing apparatus of the present invention, the pair of electrodes includes a first electrode formed in a cylindrical shape having a hollow portion, and a second electrode disposed opposite to the first electrode via the work installation portion. It is preferable that it is comprised with the electrode.
Thereby, since a high-density plasma is generated in the hollow portion of the first electrode, the surface to be processed of the workpiece can be processed uniformly and with high quality.

In the processing apparatus of this invention, it is preferable that the said process gas ejection part and the said injection material ejection part are arrange | positioned closely.
As a result, after either one of the plasma processing and the blast processing, the other processing can be performed in a short time, so that the surface to be processed of the workpiece can be processed efficiently.
In the processing apparatus of the present invention, it is preferable that one of the processing gas ejection portion and the injection material ejection portion is disposed so as to surround the other.
Thus, after one of the plasma treatment and the blast treatment, the other treatment can be performed in a shorter time, so that the surface to be processed of the workpiece can be processed more efficiently.

In the processing apparatus of this invention, it is preferable that the said process gas ejection part has a some nozzle arrange | positioned intermittently or cyclically | annularly along the circumferential direction on the outer peripheral side of the said injection material ejection part.
Thereby, since the plasma processing is performed after the blast processing, the surface to be processed of the workpiece can be processed with high quality.
In the processing apparatus of this invention, it is preferable that at least one part of the said process gas ejection part and the said injection material ejection part is combined.
Thereby, since there exists a part which can eject a plasma and an injection material simultaneously, the to-be-processed surface of a workpiece | work can be processed efficiently in a short time.

In the processing apparatus of the present invention, a processing gas supply flow path for guiding the processing gas supplied by the processing gas supply means to the processing gas ejection section,
An injection material supply flow path for guiding the injection material supplied by the injection material supply means to the injection material ejection portion;
It is preferable that the processing gas supply flow path and the injection material supply flow path merge on the upstream side of the portion where the processing gas injection section and the injection material injection section are combined.
Thereby, since a plasma and an injection material can be ejected simultaneously, the to-be-processed surface of a workpiece | work can be processed more efficiently in a short time.

In the processing apparatus of the present invention, it is preferable that the propellant is transferred by the same kind of gas as the processing gas supplied by the processing gas supply means.
Thereby, since the same kind of gas as the processing gas is used for the transfer of the propellant, the plasma is not affected even if it merges with the processing gas containing plasma.
In the processing apparatus of this invention, it is preferable that the said injection material is transferred using a part of process gas supplied by the said process gas supply means.
Thereby, since the supply source of the processing gas for propellant transfer and the processing gas for plasma generation is the same, consumption of the processing gas can be suppressed and the apparatus configuration is simplified.

In the processing apparatus of the present invention, it is preferable that at least one of the pair of electrodes is covered with a dielectric portion among the surfaces facing the one electrode.
Thereby, since the metal etc. which are electrodes are not exposed between a pair of electrodes, arc discharge can be prevented and an electric field can be generated uniformly.
In the processing apparatus of the present invention, it is preferable that the processing gas ejection part is disposed in the dielectric part.
Thereby, since the metal etc. which are electrodes are not exposed between the 1st electrode and the 2nd electrode, an electric field can be generated uniformly and a glow-like discharge can be obtained.

Hereinafter, the processing apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
<First Embodiment>
[1] Processing Device FIG. 1 is a longitudinal sectional view showing a schematic configuration of a first embodiment of the processing device of the present invention, and FIG. 2 is a bottom view of the first electrode.
In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

As shown in FIG. 1, the processing apparatus 1 includes a plasma processing apparatus 11, a blast processing apparatus 21, and a workpiece setting unit 100 that sets a workpiece 10.
The processing apparatus 1 performs a plasma process and a blast process on the workpiece 10 installed in the workpiece installation unit 100 using the plasma processing apparatus 11 and the blast processing apparatus 21 simultaneously or in a predetermined order. This is an apparatus for processing the surface 101 to be processed.
Hereinafter, the structure of each part of the plasma processing apparatus 11 and the blast processing apparatus 21 will be described.
[1-1] Plasma processing apparatus

  As shown in FIG. 1, the plasma processing apparatus 11 includes a pair of electrodes (a first electrode 2 and a second electrode 3), a dielectric part 4 that houses the first electrode 2, and a workpiece 10. A processing gas ejection part 5 that ejects a processing gas toward the processing surface 101, a processing gas introduction port 6 that introduces the processing gas into the second electrode 2, and between the first electrode 2 and the second electrode 3. A power supply circuit 7 having a power supply 72 for applying a voltage and a gas supply means 8 for supplying a processing gas for generating plasma between the first electrode 2 and the second electrode 3 are provided.

The plasma processing apparatus 1 activates a processing gas by applying a voltage between the first electrode 2 and the second electrode 3 to generate plasma, and the surface to be processed 101 of the workpiece 10 is processed by the plasma. It is a device to do.
In the present embodiment, a case where an etching process or a dicing process is performed using plasma will be described.

Hereinafter, the configuration of each part of the plasma processing apparatus 11 will be described.
The first electrode 2 is disposed to face the workpiece 10 installed in the workpiece installation unit 100. The first electrode 2 is accommodated in a cylindrical dielectric portion 4 having an open top surface and a hollow portion (a portion other than the top surface of the first electrode 2 in FIG. 1).
Since the second electrode 2 is accommodated in the dielectric portion 4 in this manner, the metal or the like that is an electrode is not exposed between the first electrode 2 and the second electrode 3. An electric field can be generated uniformly in the electrode 2.

Further, an increase in impedance can be prevented, a desired discharge can be generated at a relatively low voltage, and plasma can be generated reliably.
Furthermore, it is possible to prevent dielectric breakdown during voltage application, suitably prevent arc discharge from occurring, and obtain glow-like stable discharge.
Further, a processing gas ejection part 5 that ejects a processing gas containing plasma generated in the first electrode 2 toward the workpiece 10 is provided at the center 411 of the lower surface 41 of the dielectric part 4. The processing gas ejection part 5 opens to the dielectric part 4 and is provided as desired on the workpiece 10.

As described above, since the processing gas ejection portion 5 is provided at the central portion 411 of the lower surface 41 of the dielectric portion 4, the processing gas ejection portion has a diameter smaller than the inner diameter of the first electrode 2. The plasma can be ejected at a high density toward the surface 101 to be processed.
In addition, the cross-sectional shape of the process gas ejection part 5 is not specifically limited, for example, circular shape, a strip | belt shape, etc.

The shape of the dielectric portion 4 is not particularly limited, and examples thereof include a columnar shape, a cylindrical shape, and a prismatic shape.
Examples of the constituent material of the dielectric portion 4 include various plastics such as polytetrafluoroethylene and polyethylene terephthalate, various glasses such as quartz glass, and inorganic oxides. Examples of the inorganic oxide include metal oxides such as Al ₂ O ₃ (alumina), SiO ₂ , ZrO ₂ , and TiO ₂ , nitrides such as silicon nitride, and composite oxides such as BaTiO ₃ (barium titanate). And other dielectric materials. Of these, metal oxides are preferred, and alumina is more preferred. By using such a material, the occurrence of arc discharge in an electric field can be prevented more reliably.

The 1st electrode 2 is formed in the shape which has a hollow part. In this embodiment, as shown in FIGS. 1 and 2, it is formed in a cylindrical shape. Since the first electrode 2 has a hollow portion, a negatively charged electron is confined in the hollow portion (hereinafter referred to as “plasma generation region 30”), ionization / ionization is promoted, and extremely high density is achieved. The plasma can be generated. Therefore, the plasma processing can be efficiently performed on the processing target surface 101 of the workpiece 10.
In addition, if the shape of the 1st electrode 2 is a shape which has a hollow part, it will not specifically limit, For example, cylindrical shape, prismatic shape, etc. are mentioned.

The first electrode 2 is provided with a lid 201 so as to cover the upper surface thereof. A processing gas inlet 6 for introducing the processing gas supplied from the gas supply means 8 into the internal space (plasma generation region 30) of the first electrode 2 is formed in the central portion 202 of the lid 201.
Note that the cross-sectional shape of the processing gas inlet 6 is not particularly limited, as is the case with the processing gas ejection portion 5.

The upper end surface of the cylindrical first electrode 2 is exposed from the dielectric portion 4. Since the first electrode 2 is an electrode for applying a voltage, the first electrode 2 is connected to a power source 72 via a conducting wire 71 in order to make an electrical connection at the exposed position.
Although it does not specifically limit as a constituent material of the 1st electrode 2, For example, simple metals, such as copper, aluminum, iron, and silver, various alloys, such as stainless steel, brass, and aluminum alloy, intermetallic compounds, various carbon materials, etc. Is mentioned.

The second electrode 3 is disposed so as to face the first electrode 2 through the workpiece 10 and is directly grounded through the conductive wire 71. And since the 2nd electrode 3 has a function as a stand of the workpiece | work 10, the workpiece | work 10 is installed in contact with the upper surface (work installation part 100) of the 2nd electrode 3. FIG.
The constituent material of the second electrode 3 includes the same material as that of the first electrode 2 and is not particularly limited. Further, the shape of the second electrode 3 may be the same shape as the first electrode 2, and is not particularly limited.

  The power supply circuit 7 includes a high-frequency power source 72 that applies a voltage between the first electrode 2 and the second electrode 3, and a conductive wire 71 that conducts the second electrode 3, the high-frequency power source 72, and the first electrode 2. And. Although not shown, a matching circuit (impedance matching circuit) for the power to be supplied, frequency adjusting means (circuit) for changing the frequency of the high-frequency power source 72, and the maximum value (amplitude) of the applied voltage of the high-frequency power source 72 are changed. Voltage adjustment means (circuit) and the like are installed as necessary. Thereby, the processing conditions of the plasma processing with respect to the workpiece | work 10 can be adjusted suitably.

A high-frequency power source (power supply unit) 72 is connected to the second electrode 3 via a conducting wire (cable) 71, and a high-frequency power source 72 is connected to the first electrode 2 via a conducting wire 71. Thus, the power supply circuit 7 is configured. A part of the power supply circuit 7, that is, the conductive wire 71 on the second electrode 3 side is grounded (grounded).
When plasma processing is performed on the workpiece 10, the high frequency power source 72 is activated and a voltage is applied between the first electrode 2 and the second electrode 3. At this time, an electric field is generated in the first electrode 2, and when gas is supplied, discharge occurs and plasma is generated.

Moreover, the frequency of the high frequency power supply 72 is not particularly limited, but is preferably 10 to 70 MHz, and more preferably 10 to 40 MHz.
The gas supply unit 8 supplies a processing gas for generating plasma into the first electrode 2. This gas supply means 8 includes a gas cylinder (gas supply source) 81 that is charged and supplied with a predetermined gas, a mass flow controller (flow rate adjustment means) 82 that adjusts the flow rate of the gas supplied from the gas cylinder 81, and a mass flow controller 82. On the downstream end side, a valve (channel opening / closing means) 83 that opens and closes a flow path in the processing gas pipe 84 and a processing gas pipe 84 connected to the processing gas inlet 6 are provided.

Such a gas supply means 8 sends out a predetermined gas from a gas cylinder 81 and adjusts the flow rate by a mass flow controller 82. Then, the processing gas is introduced (supplied) into the first electrode 2 through the processing gas pipe 84 through the processing gas introduction port 6 opened in the center portion 202 of the lid 201 of the first electrode 2.
Various gases can be used as the gas (processing gas) used for such plasma processing depending on the processing purpose. For the purpose of etching treatment or dicing treatment as in the present embodiment, for example, fluorine atom-containing compounds such as CF ₄ , C ₂ F ₆ , C ₃ F ₆ , C ₄ F ₈ , CClF ₃ , and SF ₆ Various halogen-based gases such as gases and chlorine atom-containing compound gases such as Cl ₂ , BCl ₃ , and CCl ₄ are used.

Further, in the case of other processing purposes, the following processing gases can be used for each purpose.
(A) For the purpose of heating the surface to be processed 101 of the workpiece 10, for example, N ₂ , O ₂ or the like is used.
(B) For the purpose of making the treated surface 101 of the workpiece 10 water repellent (liquid repellent), for example, the fluorine atom-containing compound gas is used.

(C) For the purpose of making the treated surface 101 of the workpiece 10 hydrophilic (lyophilic), for example, O ₃ , H ₂ O, oxygen atom-containing compounds such as air, nitrogen such as N ₂ and NH ₃ Atom-containing compounds, sulfur atom-containing compounds such as SO ₂ and SO ₃ are used. Thereby, hydrophilic functional groups, such as a carbonyl group, a hydroxyl group, an amino group, are formed in the to-be-processed surface 101 of the workpiece | work 10, a surface energy can be made high and a hydrophilic surface can be obtained. Alternatively, a hydrophilic polymer film can be deposited (formed) using a polymerizable monomer having a hydrophilic group such as acrylic acid or methacrylic acid.

(D) When it is intended to add an electrical or optical function to the surface 101 to be processed of the workpiece 10, a metal oxide thin film such as SiO ₂ , TiO ₂ or SnO ₂ is applied to the surface 101 to be processed of the workpiece 10. In order to form them, metal metal-hydrogen compounds such as Si, Ti, Sn, metal-halogen compounds, metal alkoxides (organometallic compounds) and the like are used.
(E) For the purpose of resist treatment or removal of organic contamination, for example, oxygen-based gas is used.

As such a processing gas, a mixed gas composed of the processing gas and the carrier gas (hereinafter also simply referred to as “gas”) is generally used. The “carrier gas” refers to a gas introduced for starting discharge and maintaining discharge.
In this case, the gas cylinder 81 may be filled with a mixed gas (processing gas + carrier gas), or the processing gas and the carrier gas may be filled in separate gas cylinders, and these gas cylinders 81 may be in the middle of the processing gas pipe 84. May be mixed at a predetermined mixing ratio.

As the carrier gas, a rare gas such as He, Ne, Ar, or Xe can be used. These can be used alone or in a mixed form of two or more.
The ratio (mixing ratio) of the processing gas in the mixed gas is slightly different depending on the purpose of the processing and is not particularly limited. For example, the ratio of the processing gas in the mixed gas is preferably 1 to 10%. More preferably, it is 10%. Thereby, discharge is efficiently started, and a desired plasma treatment can be performed with the treatment gas.
The flow rate of the gas to be supplied is appropriately determined according to the type of gas, the purpose of processing, the degree of processing, and the like. Usually, it is preferably about 30 SCCM to 50 SLM. Thereby, since plasma is efficiently generated in the plasma generation region 30, desired processing can be performed.

[1-2] Blast Processing Device As shown in FIG. 1, the blast processing device 21 includes an injection material ejection portion 25 that ejects the injection material 40 toward the surface to be processed 101 of the workpiece 10, and the injection material 40. An injection material supply channel 24 for supplying to the ejection part 25, an injection material introduction port 23 for introducing the injection material into the injection material supply channel 24, and an injection material supply means 22 for supplying the injection material 40 to the injection material ejection part 25. And.
The blast treatment device 21 is a device that blasts the surface to be treated 101 of the workpiece 10 with the jet material 40 by jetting the jet material 40 from the jet material ejection portion 25.

Hereinafter, the configuration of each part of the blast processing device 21 will be described.
The injection material ejection part 25 is provided at the end of the lower surface 41 of the dielectric part 4. And the injection material ejection part 25 opens in the dielectric material part 4, and is provided in the workpiece | work 10 as desired.
As described above, since the injection material ejection portion 25 is provided at the end of the lower surface 41 of the dielectric portion 4, the injection material ejection portion 25 is close to the processing gas ejection portion 5, so that the blast treatment is performed. Thereafter, plasma treatment can be performed in a short time. As a result, the surface 101 of the workpiece 10 can be uniformly processed in a short time.

In addition, the cross-sectional shape of the injection material ejection part 25 is not specifically limited, For example, circular shape, elliptical shape, square shape etc. are mentioned. When it is desired to improve the processing efficiency or when the injection material 40 having a large particle size is used, it is preferable to increase the diameter or width of the cross-sectional shape of the injection material injection portion 25.
In addition, a plurality of the spray material ejecting portions 25 may be provided at the end portion of the lower surface 41 of the dielectric portion 4.

The spray material ejection portion 25 communicates with a spray material supply flow path 24 that extends in the vertical direction inside the dielectric portion 4. The propellant supply flow 24 communicates with the propellant inlet 23 formed to open at the end of the upper surface 42 of the dielectric portion 4.
In addition, the cross-sectional shape of the injection material introduction port 23 and the injection material supply flow path 24 is not particularly limited, for example, a circular shape or a belt shape.

  The injection material supply means 22 includes a classifier 221 that divides the injection material 40 into a predetermined particle size, an injection material tank 222 that stores and supplies the injection material 40, and a gas cylinder (gas supply source) that supplies and supplies a predetermined gas. ) 223, a compressor 224 for compressing the gas supplied from the gas cylinder 223, a supply device 225 for mixing and supplying the injection material 40 and the gas, and an injection material pipe 226 connected to the injection material introduction port 23. is doing.

The classifier 221 separates the spray material 40 into a predetermined particle size.
Generally, after performing the blasting process, the blasting device 21 collects the spray material 40 scattered around the workpiece 10 by a collecting device (not shown). At this time, the classifier 221 is used to classify the recovered spray material 40 into a predetermined particle size and use it again for processing.
When the workpiece 10 surface 101 is blasted, machining waste and foreign matter derived from the workpiece 10 or processing waste and foreign matter derived from the apparatus are generated. Therefore, if the injection material 40 is collected and reused in a state including these processing scraps and foreign matters, chipping, cracking, and chipping of the workpiece 10 due to the processing scraps and foreign matters are caused.

Further, when the propellant 40 is used repeatedly, the propellant 40 is crushed and worn by repeating the process, and the particle size becomes small. For this reason, minute injection materials 40 that do not contribute to the blasting process are mixed.
Therefore, it is necessary to remove these processing scraps, foreign matters, and minute injection material 40 so that such a problem does not occur. In such a case, the classifier 221 is preferably used.

The classifier 221 is disposed on the upstream side (upper side) of the injection material tank 222. Therefore, when the spray material 40 is classified into a desired particle size by the classifier 221, the spray material 40 is supplied from the lower end of the classifier 221 to the spray material tank 222 and stored.
As the classifier 221 to be used, various classifiers such as a cyclone classifier, a rotary classifier, a fine powder classifier, a louver bunkyu machine, an airflow classifier, and a screen classifier can be used.

The propellant tank 222 stores a predetermined propellant 40 used for blasting.
Since the propellant 40 is supplied to the propellant supply flow path 24 along the gas flow from the gas cylinder 223, it is supplied to the gas flow from a direction orthogonal to the gas flow. Therefore, the injection material tank 222 is disposed in a direction orthogonal to the direction in which the gas from the supply device 225 is supplied.

The injection material 40 stored in the injection material tank 222 can include various injection materials 40. For example, various glasses such as quartz glass, metal oxides such as Al ₂ O ₃ (alumina), SiO ₂ , ZrO ₂ , TiO ₂ , ZnO, and Y ₂ O ₃ , metal nitrides such as silicon nitride and aluminum nitride, carbonization Examples thereof include metal carbides such as silicon.
The average particle size of these propellants 40 is preferably 0.5 to 100 μm, and more preferably 1 to 40 μm.

If the average particle size of the injection material 40 is within such a range, the average particle size is relatively small, and therefore the surface 101 of the workpiece 10 can be finely processed.
Since the gas cylinder 223 has a function of supplying the gas that flows the propellant 40, the gas cylinder 223 is located on the most upstream side of the propellant tube 226.
Various gases can be used as the gas filled in the gas cylinder 223. For example, air and the same gas as the processing gas described above can be used.

The gas filled in the gas cylinder 223 is preferably the same type of gas as the processing gas. Thereby, since the same kind of gas is ejected from the jetting material jetting part 25 and the processing gas jetting part 5, the gas jetted from the jetting material jetting part 25, into the plasma jetted from the processing gas jetting part 5, for example, There is no adverse effect such as plasma deactivation.
Examples of the same type of gas as the processing gas filled in the gas cylinder 223 include rare gases such as He, Ne, Ar, and Xe. Since the rare gas is an inert gas, it is possible to prevent contamination of the surface 101 to be processed and plasma deactivation as described above.

The supply device 225 mixes the gas compressed by the compressor 224 and the injection material 40 supplied from the injection material tank 222, and supplies the gas containing the injection material 40 to the injection material pipe 226 with high accuracy. Therefore, it is located downstream of the compressor 224 and the injection material tank 222.
Various types of supply devices 225 can be used. For example, various types, such as a screw type, an orifice type, a rotary type, and a pressure type, are mentioned. Among these, a pressure type is preferable. Since the processing efficiency is improved by using the pressurizing die, the processing target surface 101 of the workpiece 10 can be processed efficiently in a short time.

  The injection material supply means 22 described above sends out a predetermined gas from the gas cylinder 223 and adjusts the pressure with the compressor 224. On the other hand, the injection material 40 having a predetermined particle size classified by the classifier 221 is stored in the injection material tank 222. The injection material supply means 22 supplies the gas compressed by the compressor 224 and the injection material stored in the injection material tank 222 to the supply device 225. And the injection material supply means 22 supplies the injection material 40 to the injection material pipe | tube 226 so that it may become desired supply accuracy, and supplies it to the injection material supply flow path 24 via the injection material inlet 23.

The processing apparatus 1 including the plasma processing apparatus 11 and the blast processing apparatus 21 as described above is particularly effective when a workpiece 10 containing a substance that easily oxidizes such as aluminum is used.
When the plasma processing apparatus 11 and the blast processing apparatus 21 exist independently of each other, for example, first, the workpiece 10 is installed in the blast processing apparatus 21 and blast processing is performed. Then, the workpiece 10 is removed from the blast processing device 21. Next, it is necessary to install the workpiece 10 in the plasma processing apparatus 11 and perform plasma processing. For this reason, aluminum is oxidized during removal of the workpiece 10 from the blast processing apparatus 21 and installation of the workpiece 10 on the plasma processing apparatus 11, and the desired processing cannot be performed.

  However, by using the processing apparatus 1 of the present invention, for example, first, the spray material 40 is sprayed from the spray material spraying portion 25 onto the surface to be processed 101 of the workpiece 10 and subjected to blast processing. Then, at the next moment, plasma can be ejected from the processing gas ejection portion 5 and the blasted surface 101 can be subjected to plasma treatment. Therefore, the target surface 101 of the workpiece 10 can be reliably processed without being oxidized, and can be applied to all types of workpieces 10.

Although it does not specifically limit as the workpiece | work 10, In this embodiment, what is used as a board | substrate of an electronic device is mentioned, for example. Specific materials include, for example, various types of glass such as quartz glass, alkali-free glass and quartz, various ceramics such as alumina, silica and titania, various semiconductor materials such as silicon and gallium-arsenic, polyethylene, polypropylene, polystyrene and polycarbonate. , Polyethylene terephthalate, polytetrafluoroethylene, polyimide, liquid crystal polymer, phenol resin, epoxy resin, acrylic resin, and other dielectric materials such as plastics (resin materials). Among these, it is particularly preferably used for various glasses such as quartz and quartz and various semiconductor materials.
Examples of the shape of the workpiece 10 include a plate-like shape and a long layer-like shape.

[2] Operation Method of Processing Apparatus Next, the operation (operation) of the processing apparatus 1 will be described.
The workpiece 10 is installed at the center of the second electrode 3. The power supply circuit 7 is activated and the valve 83 is opened. Then, the gas flow rate is adjusted by the mass flow controller 82, and the gas is sent out from the gas cylinder 81. As a result, the gas sent out from the gas cylinder 81 flows through the processing gas pipe 84 and is supplied into the first electrode 2 from the processing gas inlet 6. Then, the processing gas supplied into the first electrode 2 flows further downward and is ejected from the processing gas ejection part 5.

The processing gas ejected from the processing gas ejection part 5 is ejected directly under the ejection immediately after being ejected, but in the workpiece 10 directly below the processing gas ejection part 5, it is radially separated from the processing gas ejection part 5 (first Flow toward the outer periphery of the first electrode 2.
On the other hand, by the operation of the power supply circuit 7, a high frequency voltage is applied between the first electrode 2 and the second electrode 3, and an electric field is generated in the plasma generation region 30.

The processing gas that has flowed into the plasma generation region 30 is activated by discharge to generate plasma.
At this time, electrons are generated in the first electrode 2. The electrons repeatedly collide with the inner wall of the first electrode 2 to promote ionization efficiency. As a result, extremely high density plasma is generated.
The generated plasma (activated gas) comes into contact with the surface to be processed 101 of the workpiece 10, and the surface to be processed 101 is processed (etching, dicing, etc.).

On the other hand, the classifier 221 supplied with the spray material 40 is operated to classify the spray material 40 with a desired average particle size. After classification, the spray material 40 having a desired average particle diameter is supplied to the spray material tank 222 and stored.
On the other hand, gas is sent from the gas cylinder 223 to the compressor 224. The gas sent to the compressor 224 is compressed by the compressor 224 and supplied to the supply device 225 at a predetermined speed.

After the processing gas is supplied to the supply device 225, the injection material 40 is supplied from the injection material tank 222 to the supply device 225. And the injection material 40 is sent out from the supply apparatus 225 with gas. The propellant 40 is supplied from the propellant introduction port 23 to the propellant supply flow path 24 through the propellant tube 226.
The propellant 40 supplied to the propellant supply flow path 24 rides on the gas and further flows downward, and is ejected from the propellant ejection portion 25.

The spray material 40 ejected from the spray material ejecting portion 25 is ejected directly below and rebounds in all directions on the workpiece 10 directly below the spray material ejecting portion 25.
In this way, when the spray material 40 hits the workpiece 10, the processing surface 101 is processed (etching, dicing, etc.).
In such a processing apparatus 1, the first electrode 2 is moved to the workpiece 10 installed on the second electrode 3 by the moving means (not shown), and the processing gas ejection portion 5 and the injection material ejection portion 25 are separated. A desired position on the workpiece 10 is processed while moving in the longitudinal direction (x-axis direction) of the connecting line segment 20 and in the direction (y-axis direction) perpendicular to the longitudinal direction of the line segment 20.

  For example, the first electrode 2 can be scanned in the negative direction of the longitudinal direction of the line segment 20 in a state in which plasma is generated and a state in which the injection material 40 is ejected. That is, first, the spray material 40 is ejected from the spray material ejection section 25, and the surface 101 to be treated of the workpiece 10 is blasted. As a result, the processed surface 101 is roughened. Thereafter, the processing gas ejection part 5 reaches the surface to be processed 101 by the movement of the line segment 20 of the first electrode 2 in the minus direction in the longitudinal direction. And the said to-be-processed surface 101 is plasma-processed by the plasma ejected | emitted from the process gas ejection part 5. FIG. As a result, the surface 101 to be processed is in a smooth and uniform processing state.

Further, as described above, as a result of the surface 101 being roughened by blasting, the surface area of the surface 101 is increased. Thereafter, as described above, the processing target surface 101 is subjected to plasma processing. As a result, since the surface 101 to be processed having a large surface area can be plasma-treated at a time, the surface 101 to be processed can be processed more quickly.
At this time, when the entire surface 101 to be processed of the workpiece 10 is processed, the second electrode 3 is scanned in the minus direction in the longitudinal direction of the line segment 20 and then a predetermined pitch (for example, the processing gas ejection part 5 After moving in the y-axis direction (by the diameter) and rotating the first electrode 2 by 180 °, the line 20 is scanned in the plus direction in the longitudinal direction. Such scanning (movement) can be sequentially repeated to process the entire surface 101 of the workpiece 10.

By the operation as described above, since the plasma processing is performed after the blast processing in the longitudinal direction of the line segment 20, the surface 101 to be processed can be processed substantially flat in a short time. Therefore, the operation as described above is preferable to the operation of the first electrode 2 (operation of scanning the first electrode 2 in the longitudinal direction plus direction of the line segment 20), which will be described later.
Conversely, for example, when the first electrode 2 is scanned in the positive direction in the longitudinal direction of the line segment 20 in a state where the plasma is generated and the spray material 40 is ejected, the plasma is first generated from the processing gas ejection portion 5. The surface to be processed 101 of the workpiece 10 is subjected to plasma processing. As a result, the processed surface 101 is in a uniform processing state. Thereafter, the jetting material ejection portion 25 reaches the surface to be treated 101 by the movement of the line segment 20 of the first electrode 2 in the plus direction in the longitudinal direction. And the to-be-processed surface 101 is blast-processed by the injection material injected from the injection material injection part 25. FIG. As a result, the processing target surface 101 is roughened.

Further, as described above, as a result of the processing target surface 101 being uniformly processed by plasma processing, the surface area of the processing target surface 101 increases. Thereafter, as described above, the surface 101 to be processed is blasted. As a result, the processing surface 101 having a large surface area can be blasted at a time, so that the processing surface 101 can be processed quickly.
At this time, when the entire surface 101 to be processed of the workpiece 10 is processed, the first electrode 2 is scanned in the plus direction in the longitudinal direction of the line segment 20, and then a predetermined pitch (for example, the processing gas ejection part 5 After moving in the y-axis direction (by the diameter) and rotating the first electrode 2 by 180 °, the line 20 is scanned in the minus direction. Such scanning (movement) can be sequentially repeated to process the entire surface 101 of the workpiece 10.
By the operation as described above, since the blast process is performed after the plasma process in the longitudinal direction of the line segment 20, the surface 101 to be processed can be processed more quickly.

The time until the other treatment is performed after one of the blast treatment and the plasma treatment is not particularly limited, but is preferably 1 ms to 1 hour, for example. If the time for which the plasma treatment is performed after the blast treatment is within such a range, the blast treatment and the plasma treatment can be performed on the surface 101 of the workpiece 10 in a short time. Even in the case where is used, the processing target surface 101 of the workpiece 10 is not oxidized. As a result, the surface 101 to be processed can be processed with high quality.
Instead of moving the first electrode 2, the second electrode 3 on which the workpiece 10 is installed or the workpiece 10 may be moved.

  The processing apparatus 1 described above is used in the fields of electronic components such as crystal resonator processing, sensor substrate drilling, groove processing electrode formation (solar cell, filter, laminated substrate), printed circuit board smear processing HDD member pattern processing, IC Deburring of resin mold packages, drilling of device wafers, semiconductor-related fields such as grooving ceramic wafers, FPD-related fields such as formation of conductive film peeling barriers, etc., processing and removal of oxide insulating films, glass (quartz), etc. It can be applied to strain processing and crystal processing. Moreover, application to MEMS etc. is also possible. If a mask is used, fine patterning is possible.

<Second Embodiment>
FIG. 3 is a longitudinal sectional view showing a schematic configuration of the second embodiment of the processing apparatus of the present invention.
In the following description, the upper side in FIG. 3 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the processing apparatus according to the second embodiment will be described with a focus on differences from the first embodiment described above, and description of similar matters will be omitted.

The processing apparatus 1 of the present embodiment is different from the first embodiment in that it includes a processing gas supply channel 9 that supplies a processing gas to the processing gas ejection unit 5. Moreover, the injection material supply flow path 24 merges with the process gas supply flow path 9 in front of the ejection part 50 (the process gas ejection part 5 and the injection material ejection part 25), and the process gas ejection part 5, the injection material ejection part 25, and Is different from the first embodiment in that both are used.
That is, in the processing apparatus 1 of the present embodiment, as shown in FIG. 3, the injection material supply channel 24 does not penetrate the dielectric part 4, and the lower end part of the dielectric part 4 (under the first electrode 2). The angle is inclined toward the processing gas supply channel 9 on the side). The injection material supply flow path 24 extends toward the process gas supply flow path 9, and merges with the process gas supply flow path 9 on the upstream side of the ejection portion 50 and on the downstream side of the lower surface of the first electrode 2. is doing.

Since the injection material supply flow path 24 merges with the processing gas supply flow path 9, the plasma and the injection material 40 are ejected from the same ejection portion 50, so that the surface to be treated 101 of the workpiece 10 is subjected to plasma treatment and blast treatment. Can be performed simultaneously. Thereby, the processing speed of the to-be-processed surface 101 can be improved.
Moreover, since the plasma and the injection material 40 are ejected from the same ejection part 50, the surface 101 (small area) to be treated can be locally and rapidly treated.
A check valve may be installed at any position of the processing gas supply channel 9 in order to prevent the injection material 40 from entering the first electrode 2.

As shown in FIG. 3, the processing apparatus 1 of the present embodiment uses the processing gas ejection part 5 and the injection material ejection part 25 together, so that the operation method is also different from that of the first embodiment.
That is, the propellant 40 supplied to the propellant supply flow path 24 rides on the gas and further flows downward. Then, the propellant 40 flows toward the process gas supply channel 9 with the path inclined at the lower end of the dielectric part 4 toward the process gas ejection part 5. The injection material 40 that has reached the processing gas supply flow path 9 merges with the processing gas flowing through the processing gas supply flow path 9 and flows to the ejection portion 50 together with the processing gas. Then, the processing gas and the spray material reach the ejection part 50 and are ejected toward the workpiece 10. As a result, the plasma and the spray material 40 are simultaneously brought into contact with the workpiece 10 and processing (etching, dicing, etc.) is performed on the surface 101 to be processed.
As described above, the plasma and the spray material 40 are ejected from the same ejection portion 50, and the plasma treatment and the blasting treatment are simultaneously performed. Therefore, the first electrode 2 can be scanned in any direction, and the processing efficiency can be improved. Is expensive.

<Third Embodiment>
FIG. 4 is a longitudinal sectional view showing a schematic configuration of the third embodiment of the processing apparatus of the present invention.
In the following description, the upper side in FIG. 4 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the processing apparatus according to the third embodiment will be described with a focus on differences from the first embodiment described above, and description of similar matters will be omitted.

The processing apparatus 1 of this embodiment is the same as that of 1st Embodiment except using the process gas supply means 8 instead of the gas cylinder 223 and the compressor 224 of the blast apparatus 21. FIG.
That is, as shown in FIG. 4, the processing apparatus 1 of the present embodiment branches before the processing gas pipe 84 is connected to the processing gas inlet 6 and connects to the processing gas inlet 6 and the supply device 225. It is configured as follows. Then, a part of the processing gas passing through the processing gas pipe 84 is supplied to the supply device 225, and the injection material 40 flows toward the injection material ejection part 25 as in the first embodiment.

As described above, the gas cylinder 223 and the compressor 224 for the propellant 40 are not required by using the gas for supplying the propellant 40 and the processing gas for generating plasma, thereby simplifying the configuration of the processing apparatus 1. Thus, the installation space for the processing apparatus 1 can be reduced.
Moreover, since the supply source of the gas which supplies the injection material 40, and process gas is the same, the consumption of gas can be suppressed.
In addition, the processing apparatus 1 may be filled with the processing gas in the gas cylinder 81, and may be filled with the carrier gas in another gas cylinder. In this case, the processing apparatus 1 may be configured to branch before the carrier gas pipe is connected to the processing gas pipe 84 and to be connected to the processing gas pipe 84 and the supply device 225.

Further, in the processing apparatus 1 of the present embodiment, valves may be provided between the branch point 841 where the process gas pipe 84 branches and the process gas inlet 6, and between the branch point 841 and the supply device 225, respectively. . In this case, by selecting the opening / closing pattern of each valve, (a) only the flow of the processing gas from the branch point 841 to the supply device 225 and (b) the processing gas from the branch point 841 to the processing gas inlet 6 are selected. , And the flow of the processing gas from the branch point 841 toward the supply device 225 and the flow of the processing gas from the branch point 841 toward the processing gas inlet 6. Can be selected.
Therefore, the processing apparatus 1 of the present embodiment has three types of processing, that is, only blast processing ((a)), only plasma processing ((b)), and both blast processing and plasma processing ((c)). Processing can be selected.

<Fourth embodiment>
FIG. 5 is a longitudinal sectional view showing a schematic configuration of the fourth embodiment of the processing apparatus of the present invention, and FIG. 6 is a bottom view of the first electrode 2.
In the following description, the upper side in FIG. 5 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the processing apparatus according to the fourth embodiment will be described with a focus on differences from the first embodiment described above, and description of similar matters will be omitted.

The processing apparatus 1 of this embodiment is different from the processing apparatus 1 of the first embodiment in the following points.
That is, in the processing apparatus 1 of the present embodiment, the propellant introduction port 23 is located at the center portion 202 of the lid 201 of the first electrode 2. Therefore, the injection material supply channel 24 is provided so as to extend in the vertical direction in the first electrode 2 (plasma generation region 30). The propellant supply flow path 24 communicates with the propellant ejection portion 25 provided to open at the center 411 of the lower surface 41 of the dielectric portion 4.

Further, the processing gas inlet 6 is provided in the lid 201 of the first electrode 2 adjacent to the propellant inlet 23. The processing gas ejection part 5 opens to the lower surface 41 of the dielectric part 4 and is provided intermittently along the circumferential direction on the outer peripheral side of the ejection part 25.
Thus, when the process gas ejection part 5 is intermittently arranged along the circumferential direction on the outer peripheral side of the injection material ejection part 25, the blast process is performed when the first electrode 2 or the workpiece 10 is scanned. Since the plasma treatment is performed thereafter, the surface 101 to be processed of the workpiece 10 can be processed with high quality and in a short time.

In the present embodiment, the propellant supply flow path 24 is preferably made of a dielectric material. Thereby, since no metal other than the first electrode 2 exists in the first electrode 2, an electric field can be uniformly generated in the plasma generation region 30, and high-density plasma can be generated.
As shown in FIGS. 5 and 6, the processing apparatus 1 according to the present embodiment operates intermittently along the circumferential direction on the outer peripheral side of the injection material ejection portion 25 because the processing gas ejection portion 5 is disposed in the circumferential direction. The method is also different from the first embodiment.

  For example, when the first electrode 2 is scanned in the negative direction in the longitudinal direction of the line segment 20 in a state where plasma is generated and the injection material 40 is ejected, first, due to the plasma ejected from the processing gas ejection portion 5, The processing target surface 101 of the workpiece 10 is subjected to plasma processing. As a result, the processed surface 101 is in a uniform processing state. And the injection material ejection part 25 reaches | attains on the said to-be-processed surface 101 by the movement to the longitudinal direction minus direction of the line segment 20 of the 1st electrode 2. FIG.

Next, the spray material 40 is ejected from the spray material ejection part 25, and the to-be-processed surface 101 is blasted. As a result, the processed surface 101 is roughened. And the process gas ejection part 5 reaches | attains the said to-be-processed surface 101 again by the movement to the longitudinal direction minus direction of the line segment 20 of the 1st electrode 2. FIG.
The surface to be processed 101 is plasma-processed by the plasma ejected from the processing gas ejection part 5. As a result, the surface 101 to be processed is in a smooth and uniform processing state.
By the operation as described above, since the plasma processing is always performed after the blast processing in the longitudinal direction of the line segment 20, the processing target surface 101 can be processed substantially flatly in a short time efficiently.

<Fifth Embodiment>
FIG. 7 is a bottom view of the first electrode 2 showing a schematic configuration of the fifth embodiment of the processing apparatus of the present invention.
Hereinafter, the processing apparatus according to the fifth embodiment will be described focusing on differences from the above-described fourth embodiment, and description of similar matters will be omitted.

In the processing apparatus 1 of the present embodiment, the processing gas ejection part 5 is opened on the lower surface 41 of the dielectric part 4 and is formed annularly on the outer peripheral side of the injection material ejection part 25 over the entire circumference in the circumferential direction. Is the same as in the fourth embodiment.
Thus, when the process gas ejection part 5 is annularly arranged on the outer peripheral side of the injection material ejection part 25 over the entire circumference in the circumferential direction, the blast process is performed when the first electrode 2 or the workpiece 10 is scanned. Since the plasma treatment is always performed after this, the surface 101 of the workpiece 10 can be flattened more efficiently in a shorter time.

<Sixth Embodiment>
FIG. 8 is a longitudinal sectional view showing a schematic configuration of the sixth embodiment of the processing apparatus of the present invention.
Hereinafter, the processing apparatus according to the sixth embodiment will be described focusing on the differences from the third embodiment and the fourth embodiment described above, and description of similar matters will be omitted.
The processing apparatus 1 of the present embodiment is different from the third embodiment and the fourth embodiment in that the processing gas supply means 8 uses a processing gas gas cylinder 81a and a carrier gas gas cylinder 81b. The carrier gas is different from the third embodiment and the fourth embodiment in that the carrier gas is used for both the process gas supply and the injection material 40 supply.

  That is, in the processing apparatus 1 of this embodiment, as shown in FIG. 8, the processing gas supply means 8 fills and supplies a processing gas gas cylinder 81a that supplies and supplies a predetermined processing gas, and supplies a predetermined carrier gas. Carrier gas flowing into the carrier gas gas cylinder 81b, a valve 83a for opening and closing the flow path in the processing gas pipe 84a, a valve 83b for opening and closing the flow path in the carrier gas pipe 84b, and the processing gas pipe 84a and the carrier gas pipe 84b The third embodiment and the fourth embodiment are provided with a valve 83c for adjusting the gas amount, a processing gas pipe 84a connected to the processing gas introduction port 6, and a carrier gas pipe 84b connected to the supply device 225. It is different from the embodiment.

And the processing apparatus 1 of this embodiment is comprised so that the carrier gas pipe 84b may be branched in any position of the carrier gas pipe 84b in order to connect to the processing gas pipe 84a. In the present embodiment, the carrier gas pipe 84 b is branched at the upstream end of the carrier gas pipe 84 b so as to be connected to the processing gas pipe 84 b between the processing gas gas cylinder 81 a and the mass flow controller 82.
Such a gas supply means 8 sends out a predetermined processing gas from the processing gas gas cylinder 81a and also sends out a predetermined carrier gas from the carrier gas gas cylinder 81b. The carrier gas is branched in two directions at a branch point 841 of the carrier gas pipe 84b.

One of the branched carrier gases passes through the open valve 83c, merges with the processing gas flowing through the processing gas pipe 84a, and is mixed. The flow rate of the mixed processing gas is adjusted by the mass flow controller 82. Then, the gas is supplied from the processing gas inlet 6 into the first electrode 2 through the processing gas pipe 84a.
The other carrier gas branched at the branch point 841 passes through the opened valve 83b and is supplied to the supply device 225. The carrier gas supplied to the supply device 225 is supplied to the injection material supply flow path 24 from the injection material introduction port 23 through the injection material pipe 226 while taking in the injection material supplied from the injection material tank 222. Is done.

The processing apparatus 1 of the present embodiment has the following effects in addition to the effects of the third embodiment described above.
That is, in the third embodiment, since the mixed gas of the processing gas and the carrier gas is supplied from the gas cylinder 81, the mixed gas takes in the injection material with the supply device 225, passes through the injection material pipe 226, Used for propellant transfer. As a result, the mixed gas (processing gas) is consumed.
On the other hand, in this embodiment, since the gas cylinder 81 is divided into the process gas gas cylinder 81a and the carrier gas gas cylinder 81b, expensive process gas is not used for propellant transfer. That is, expensive process gas is used only for plasma processing.

Next, a method of using the processing gas supply unit 8 of this embodiment will be described.
(A) When the valve 83a and the valve 83c are closed and the valve 83b is opened and the carrier gas is sent out from the carrier gas gas cylinder 81b, the carrier gas flows only through the carrier gas pipe 84b. The carrier gas flows through the flow path as described above, and the workpiece 10 is subjected to blasting.

(B) When the valve 83b is closed, the valves 83a and 83c are opened, and the carrier gas is sent out from the carrier gas gas cylinder 81b, the carrier gas merges with the processing gas flowing through the processing gas pipe 84a, and the processing gas pipe It flows through 84a. The mixed gas flows through the flow path as described above, and the workpiece 10 is subjected to plasma treatment.
(C) When all of the valves 83a to 83c are opened and the carrier gas is sent out from the carrier gas gas cylinder 81b and the processing gas is sent out from the processing gas gas cylinder 81a, the gas flows as described above. Then, both the blast process and the plasma process are performed on the workpiece 10.
As described above, in the processing apparatus 1 of the present embodiment, only the blast process ((A)), only the plasma process ((B)), and the blast process are performed depending on the opening / closing pattern of the three valves 83a, 83b, and 83c. And three kinds of treatments (both (C)) can be selected.

<Seventh embodiment>
FIG. 9 is a longitudinal sectional view showing a schematic configuration of the seventh embodiment of the processing apparatus of the present invention.
In the following description, the upper side in FIG. 9 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the processing apparatus according to the seventh embodiment will be described with a focus on differences from the first embodiment described above, and description of similar matters will be omitted.

The processing apparatus 1 of the present embodiment is different from the first embodiment in the following points.
That is, the first electrode 2 is formed in a circular tube shape. And the upper end surface opening part 203 and the lower end surface opening part 204 are formed in the upper end surface and the lower end surface, respectively.
In the internal space of the first electrode 2 (plasma generation region 30), the central part 205 of the upper end surface opening 203 of the first electrode 2 communicates with the injection material introduction port 23, and extends in the vertical direction for injection. A material supply channel 24 is provided. The propellant supply channel 24 communicates with the propellant ejection portion 25 provided at the center portion 206 of the lower end surface opening 204 of the first electrode 2.

The pipe 26 constituting the propellant supply flow path 24 has a function as a counter electrode for generating an electric field with the first electrode 2. Therefore, it is made of the same material as the first electrode 2. The tube 26 is directly grounded via a conducting wire 71.
In this way, by generating an electric field between the tube 26 and the first electrode 2, the second electrode 3 is not required, so that the configuration of the processing apparatus 1 can be further simplified.

In addition, since an electric field is generated between the opposing electrodes of the tube 26 and the first electrode 2, plasma can be generated efficiently.
A processing gas inlet 6 is provided in the upper end surface opening 203 adjacent to the propellant inlet 23.
Then, the processing gas introduced into the plasma generation space from the processing gas inlet 6 is activated, plasma is generated, and the processing gas is ejected from the lower end surface opening 204. Therefore, the lower end surface opening 204 is the processing gas ejection portion 5.

Further, unlike the first embodiment, the first electrode 2 is not accommodated in the dielectric part 4, and the outer peripheral surface of the first electrode 2 is covered with the dielectric part 4.
Since the tube 26 is used instead of the second electrode 3, the workpiece 10 is installed on the table 60.
As mentioned above, although the processing apparatus of this invention was demonstrated based on each embodiment of illustration, this invention is not limited to these. Each part which comprises a processing apparatus can be substituted for the thing of the arbitrary structures which can exhibit the same function. Moreover, arbitrary components may be added.

Further, the processing apparatus of the present invention may be a combination of any two or more configurations (features) of the above embodiments. For example, the combination of the configuration of the first embodiment and the third embodiment, the combination of the configuration of the second embodiment and the third embodiment, the combination of the configuration of the third embodiment and the fourth embodiment May be used.
In addition, the injection material supply flow path is provided in the dielectric portion so as to extend in the vertical direction. However, the dielectric material is ejected toward the surface to be processed immediately below the processing gas injection portion. The lower end of the part may be provided to be inclined toward the processing gas ejection part.

Moreover, although the 1st electrode 2 was comprised by the cylindrical shape, a linear form may be sufficient.
In addition, the processing apparatus of each of the above embodiments performs processing in a state where the blast processing apparatus and the plasma processing apparatus are always operated. However, as a usage mode of the processing apparatus, either the blast processing apparatus or the plasma processing apparatus is used. Only one of them may be operated and used.
Further, only one of the blast processing apparatus and the plasma processing apparatus is operated to process the surface to be processed of the workpiece. Then, the said one processing apparatus may be stopped and the other processing apparatus may be operated to process the surface to be processed of the workpiece. In this case, the workpieces to be plasma-treated and blasted may be the same workpiece or different workpieces.
Moreover, the moving means for moving the second electrode is not particularly limited, and examples thereof include various moving mechanisms.

It is a longitudinal cross-sectional view which shows schematic structure of 1st Embodiment of the processing apparatus of this invention. It is a bottom view of the 1st electrode in FIG. It is a longitudinal cross-sectional view which shows schematic structure of 2nd Embodiment of the processing apparatus of this invention. It is a longitudinal cross-sectional view which shows schematic structure of 3rd Embodiment of the processing apparatus of this invention. It is a longitudinal cross-sectional view which shows schematic structure of 4th Embodiment of the processing apparatus of this invention. FIG. 6 is a bottom view of the first electrode in FIG. 5. It is a bottom view of the 1st electrode which shows schematic structure of 5th Embodiment of the processing apparatus of this invention. It is a longitudinal cross-sectional view which shows schematic structure of 6th Embodiment of the processing apparatus of this invention. It is a longitudinal cross-sectional view which shows schematic structure of 7th Embodiment of the processing apparatus of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Processing apparatus 11 ... Plasma processing apparatus 2 ... 1st electrode 3 ... 2nd electrode 4 ... Dielectric part 41 ... Lower surface 411 ... Center part 42 ... Upper surface 5 ... Processing gas ejection Section 6 …… Processing gas inlet 7 …… Power supply circuit 71 …… Conductor 72 …… Power supply 8 …… Gas supply means 81 …… Gas cylinder 81a …… Processing gas cylinder 81b …… Carrier gas cylinder 82 …… Mass flow controller 83, 83a, 83b, 83c ... Valves 84, 84a ... Processing gas pipe 84b ... Carrier gas pipe 841 ... Branch point 9 ... Processing gas supply flow path 10 ... Workpiece 101 ... Surface to be processed 20 ... Line segment 21 ... Blast treatment device 22 ... Injection material supply means 221 ... Classifier 222 ... Injection material tank 223 ... Gas cylinder 224 ... Complex Sir 225 …… Supply device 226 …… Injection material pipe 23 …… Injection material introduction port 24 …… Injection material supply flow path 25 …… Injection material ejection part 26 …… Pipe 30 …… Plasma generation region 40 …… Injection material 50 …… Blowout part 60 …… Stand 100 …… Work placement part 201 …… Cover body 202 …… Center part 203 …… Upper end face opening part 204 …… Lower end face opening part 205 …… Center part 206 …… Center part

Claims (12)

A plasma processing apparatus, a blast processing apparatus, and a work setting unit for setting a work,
A processing apparatus for performing a plasma process and a blast process simultaneously or in a predetermined order on the work set in the work setting unit by using the plasma processing apparatus and the blast processing apparatus. The plasma processing apparatus includes a pair of electrodes,
A power supply circuit comprising a power supply for applying a voltage between the pair of electrodes;
Gas supply means for supplying a processing gas for generating plasma between the pair of electrodes;
A processing gas ejection part for ejecting the processing gas toward the surface to be processed of the workpiece,
By applying a voltage between the pair of electrodes, the processing gas is activated to generate the plasma, and the surface to be processed of the workpiece is plasma-processed by the plasma,
The blast treatment device includes an injection material ejection unit that ejects an injection material toward the surface to be processed of the workpiece,
An injection material supply means for supplying the injection material to the injection material ejection part,
The processing apparatus of Claim 1 comprised so that the to-be-processed surface of the said workpiece | work may be blasted by ejecting the said injection material from the said injection material ejection part.   The pair of electrodes includes a first electrode formed in a cylindrical shape having a hollow portion, and a second electrode disposed opposite to the first electrode via the work installation portion. The processing apparatus according to claim 2.   The processing apparatus of Claim 2 or 3 with which the said process gas ejection part and the said injection material ejection part are arrange | positioned closely.   The processing apparatus according to any one of claims 2 to 4, wherein one of the processing gas ejection portion and the injection material ejection portion is disposed so as to surround the other.   The processing apparatus according to claim 2, wherein the processing gas ejection part has a plurality of nozzles arranged intermittently or annularly along a circumferential direction on an outer peripheral side of the injection material ejection part.   The processing apparatus according to claim 2, wherein at least a part of the processing gas ejection portion and the injection material ejection portion are combined. A processing gas supply channel for guiding the processing gas supplied by the processing gas supply means to a processing gas ejection section;
An injection material supply flow path for guiding the injection material supplied by the injection material supply means to the injection material ejection portion;
The processing apparatus according to claim 7, wherein the processing gas supply channel and the injection material supply channel are merged upstream of a portion where the processing gas ejection unit and the injection material ejection unit are combined.   The processing apparatus according to claim 2, wherein the spray material is transferred by a gas of the same type as the processing gas supplied by the processing gas supply unit.   The processing apparatus according to claim 2, wherein the spray material is transferred using a part of the processing gas supplied by the processing gas supply unit.   The processing apparatus according to any one of claims 2 to 10, wherein at least one of the pair of electrodes is covered with a dielectric portion of a surface facing each of the electrodes.   The processing apparatus according to claim 11, wherein the processing gas ejection part is disposed in the dielectric part.

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