JP2009132945A - Method for forming film-formed body by aerosol deposition process - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a film-formed body having a thickness of exceeding 100 μm by an aerosol deposition process. <P>SOLUTION: The film-formed body is formed while etching the deposited film, by spraying raw particulates from a plurality of nozzles toward an approximately same area on a substrate to be deposited thereon and controlling the incident angle of the raw particulates onto the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for forming a thick film-formed body using an aerosol deposition method.

  In the aerosol deposition method (hereinafter referred to as AD method), a raw material composed of ceramic or metal fine particles having a particle size of several tens of nanometers to several μm is mixed with gas to form an aerosol, which is sprayed onto a substrate through a nozzle. Is a technology to form In recent years, the AD method has attracted attention as a method capable of forming a dense film having a crystal structure similar to that of fine particles as a raw material at a low substrate temperature and at a high film formation rate.

  A film forming apparatus using the AD method will be described with reference to FIG. FIG. 7 is a schematic diagram showing the basic configuration of the film forming apparatus. In the figure, 71 is a deposition substrate, 72 is an XY stage that moves the deposition substrate 71, 73 is a nozzle, 74 is a deposition chamber, 75 is a classifier, 76 is an aerosol generator, and 77 is a high-pressure gas supply source. , 78 is a mass flow controller, 79 is a pipeline, and arrows in the figure schematically indicate the substrate scanning direction. Raw material fine particles made of ceramics or metal are mixed with a carrier gas (not shown) supplied via a mass flow controller 78 inside the aerosol generator 76 to be aerosolized. The inside of the film forming chamber 74 is decompressed to about 50 Pa by a vacuum pump (not shown), and the raw material fine particles aerosolized by the gas flow generated by the differential pressure between this pressure and the pressure inside the aerosol generator 76. Is introduced into the film forming chamber 74 through the classifier 75, accelerated through the nozzle 73, and sprayed onto the film formation substrate 71. The raw material fine particles conveyed by the gas are accelerated to several hundred m / s by passing through a nozzle having a minute opening of 1 mm or less.

  The accelerated raw material fine particles collide with the deposition target substrate 71, and the kinetic energy is released all at once, so that a film is formed. However, even if all the kinetic energy of the accelerated raw material fine particles is spent on raising the temperature of the raw material fine particles that have collided with the substrate, the temperature is about an order of magnitude compared to the temperature necessary for sintering ceramics, for example. There are many unclear points about the mechanism by which a low and dense film body can be obtained. However, it is considered that the crushing generated at the time of substrate collision of raw material fine particles plays an important role in the film forming process. Note that “crushing of raw material fine particles” means both crushing of raw material fine particles that have come to the substrate and crushing of raw material fine particles that have already adhered to the substrate surface.

That is, in Japanese Patent Application Laid-Open No. 2003-73855, in the case of raw material fine particles made of a brittle material, the average particle diameter of the fine particles is 50 nm or more, and the shape thereof is an aspherical irregular shape, at least at one or more corners. It is disclosed that a dense film-formed body can be obtained as a result of having a shape having, because the impact force at the time of substrate collision is concentrated on the corner portion and the crushing of the raw material fine particles is promoted.
JP 2003-73855 A

  However, as a result of systematic examination for forming a film-forming body having a large film thickness by our AD method, although a film-forming body of about 10 to 20 μm is relatively easily formed, For example, it has been found that it is difficult to stably form a film-forming body having a film thickness exceeding 100 μm. That is, in the initial stage of film formation, in other words, in a state where the film thickness is as thin as about 20 μm or less, a dense film body is obtained, but as the film thickness increases, a dense film body is not formed, and the green compact is formed. It became clear that there was a problem that only

To solve the above problem,
The first means provided by the present invention include:
The raw material fine particles are mixed with a carrier gas to be aerosolized, and together with the carrier gas, the raw material fine particles are accelerated through a plurality of nozzles arranged in parallel and sprayed toward the deposition substrate surface, thereby forming a film-formed body in the decompression chamber. In the aerosol deposition method to be formed, the raw material fine particles accelerated and jetted from the plurality of nozzles are incident on substantially the same location on the deposition surface of the deposition target substrate, and the raw material fine particles accelerated and jetted from each nozzle A method of forming a film-forming body by an aerosol deposition method, wherein the incident direction on the deposition target substrate is different.

The second means provided by the present invention includes
In the first means, the flow rate of the carrier gas containing the aerosolized raw material fine particles injected from at least one of the plurality of nozzles, or the density of the raw material fine particles in the carrier gas is injected from another nozzle. The method of forming a film-forming body by the above-described aerosol deposition method is different from the flow rate of the carrier gas containing the aerosolized raw material fine particles or the concentration of the raw material fine particles in the carrier gas.

The third means provided by the present invention includes
In the first or second means, a carrier gas containing the aerosolized raw material fine particles is intermittently injected from at least one of the plurality of nozzles. It is a forming method.
The fourth means provided by the present invention includes:
In any one of the first to third means, an angle formed by one of incident directions of the raw material fine particles accelerated and jetted from the plurality of nozzles on the deposition target substrate and a deposition target surface of the deposition target substrate is approximately 90. This is a method for forming a film-forming body by an aerosol deposition method.
Further, a fifth means provided by the present invention is the above-mentioned first to third means, wherein the raw material particles accelerated and jetted from the plurality of nozzles are incident on the deposition substrate and the deposition substrate. The film-deposited body is formed by the aerosol deposition method, wherein at least one of the angles formed with the deposition surface is substantially the same and the angle is 90 degrees or less.

  As a result of observing the structure of the film formed by the AD method, which is a dense film-forming body at the initial stage of film formation and becomes a green compact as the film thickness increases, using an electron microscope, for example, as schematically illustrated in FIG. It became clear that it has an organization as shown. FIG. 8 is a schematic diagram schematically showing a cross-sectional structure of a film formed under a condition where the carrier gas flow rate is constant, in which 81 is a substrate, 82 is a film-forming body layer, and 83 is a green compact layer. is there. That is, under the condition that the carrier gas flow rate is constant and the substrate incident angle of the raw material fine particles substantially coincides with the normal direction of the surface of the substrate 81, the structure of the film formed by the raw material fine particles injected from a single nozzle is: As shown in the figure, a dense film is formed in the film formation body layer 82, and the diameter of the particles constituting the film formation body layer 82 is about 1/10 to 1/5 of the particle diameter of the raw material fine particles. Met. On the other hand, in the green compact layer 83, as the distance from the substrate 81 increases (as the film thickness increases), both the number and size of the voids increase, and the diameter of the particles constituting the green compact layer As a result, it was clarified that the particle size of the raw material fine particles finally became approximately the same. In addition, the boundary between the film formation layer 82 and the green compact layer 83 is not clearly distinguishable, and it is clear that the structure change from the film formation layer to the green compact layer occurs continuously. became.

  From this observation result, the cause of the formation of the green compact layer 83 is that the raw material fine particles are crushed as the film thickness is increased (as described above, “raw material fine particle crushing” is the crushing of the raw material fine particles themselves that have come to the substrate). It means that both of the raw material fine particles already adhered to the substrate surface are not easily generated.

  On the other hand, the cause of the crushing of the raw material fine particles is an impact force accompanying the release of the kinetic energy of the raw material fine particles at the time of the substrate collision, and the kinetic energy of the raw material fine particles is determined by the substrate collision speed. By the way, since the substrate collision speed of the raw material fine particles is determined by the flow rate of the carrier gas, the carrier collision rate of the raw material fine particles is always constant when forming the film under the carrier gas flow rate: constant condition. Sometimes the kinetic energy released is also constant. Therefore, ideally, crushing of the raw material fine particles should occur regardless of the formed film thickness.

  However, as described above, as a result of observing the cross-sectional structure of the film formed by the AD method with an electron microscope, as the film thickness increases, the number and size of the voids both increase. It is assumed that such a phenomenon occurs.

  FIG. 9 is a diagram schematically showing the relationship between the pressure generated by the substrate collision of the raw material fine particles and the strain generated in the film forming body layer and the green compact layer. In general, pressure (stress) and strain, as shown in the figure, in a region where the pressure is small, the strain increases linearly with the pressure (in the figure, elastic deformation region), but then the pressure The amount of strain does not follow the rise, and eventually crushes (the crushing point in the figure). In the green compact layer, since there are many voids, it is easier to deform than a dense film-formed body layer, and it is considered that the elastic deformation region is wide. It is estimated that the critical pressure is also increasing. That is, if the pressure generated by the substrate collision of the raw material fine particles exceeds the critical pressure in the film formation layer, but lower than the critical pressure of the green compact layer, once the green compact layer is formed, the substrate is no longer The raw material fine particles adhering to the surface are not crushed, and the green compact layer continues to be formed.

  In order to prevent the formation of the green compact layer, it is necessary to remove uncrushed raw material fine particles adhering to the substrate surface or fine particles that are insufficiently crushed, which are the source of the green compact layer formation. Necessary. Such uncrushed raw material fine particles or fine particles that are not sufficiently crushed are considered to have a low adhesion force to the substrate surface or a film-forming body already formed on the substrate, and can be removed relatively easily. .

  That is, the present invention focuses on the etching effect of raw material fine particles incident on the substrate described below, and forms a dense film formation while removing uncrushed raw material fine particles or fine particles that are not sufficiently crushed. It is.

  4 to 6 show the influence of the raw material fine particle incident direction, in other words, the substrate incident angle.

  FIG. 4a is a schematic diagram showing the relationship between the incident direction of the raw material fine particles and the substrate incident angle, in which 41 is a substrate, 42 is a film formed, 43 is a nozzle, 44 is a nozzle opening, and 45 is a nozzle opening. The raw material fine particles ejected from 44. FIG. 4B schematically shows the shape of the film-formed body formed for a fixed time with the substrate position fixed. In the figure, 46 is the shape of the film-forming body, 47 is the iso-thickness line, and P is the point where the thickest point is projected onto the substrate. When the substrate 41 is fixed and the raw material fine particles are sprayed toward the substrate surface for a certain period of time, the raw material fine particles 45 are incident on the substrate with a certain degree of directional distribution. It becomes a mountain shape as shown in FIG. Here, the incident direction of the raw material fine particles means a direction parallel to a straight line connecting the point P and the center of the nozzle opening 44 and directed from the nozzle opening 44 toward the point P. In general, it is understood to be the direction indicated by the arrow shown in FIG. 4a and the block arrow. Further, as shown in FIG. 4a, the substrate incident angle here means an angle formed between the normal direction of the substrate surface and the incident direction, Θ, and the angle formed between the deposition surface and the incident direction is (90 -Θ) degrees.

  FIG. 5 shows the relationship between the incident angle of the substrate and the film thickness of the film-formed body formed for a certain time. In the figure, the mark ● corresponds to the case where the carrier gas flow rate is small, and the symbol □ corresponds to the case where the carrier gas flow rate is large. In any case, the film thickness is standardized by the film thickness obtained when the film is formed with the substrate incident angle of 0 degrees (that is, the angle formed with the surface to be deposited is 90 degrees). As shown in the figure, when the substrate incident angle exceeds 20 degrees, the film thickness of the film-deposited body starts to decrease sharply, and when the carrier gas flow rate is small, the decrease amount is when the flow rate is large. Smaller than that. It is estimated that this is because the etching effect of particles incident on the substrate becomes obvious as the substrate incident angle increases.

  FIG. 6 shows the relationship between the amount of decrease in film thickness and the incident angle of the substrate after the raw material fine particles are incident on the substrate for a certain period of time after forming the film-forming body having a certain thickness. As in FIG. 5, the mark ● corresponds to the case where the carrier gas flow rate is small, and the symbol □ corresponds to the case where the carrier gas flow rate is large. In the same figure, the film thickness reduction amount of 0 means both when the film thickness does not decrease and when the material fine particles incident on the substrate are deposited and the film thickness increases.

  As shown in the figure, when the carrier gas flow rate is large, the decrease in film thickness becomes apparent from around the substrate incident angle exceeding 25 degrees, whereas when the carrier gas flow rate is small, the substrate incident angle is The decrease in film thickness becomes apparent from around 40 degrees.

  From the above results, it is understood that in the AD method, the etching effect of the raw material fine particles can be controlled by appropriately selecting the substrate incident angle of the raw material fine particles and the carrier gas flow rate.

  In other words, the present invention forms a film using a plurality of nozzles, harmonizes the etching effect and the deposition effect described above, and serves as a source for forming a green compact layer. While removing the raw material fine particles or fine particles insufficiently crushed, a film-forming body having a large film thickness and excellent denseness is formed.

  According to the present invention, it is possible to stably form a thick film-formed body having a thickness of ultra 100 μm using the AD method.

Embodiments of the present invention will be described below.
1 to 3 are schematic views showing an embodiment of the present invention, and schematically show a relationship between a substrate position and a nozzle.

  FIG. 1 schematically shows a case where a film-forming body is formed by raw material fine particles ejected from the first and second nozzles. In the figure, 11 is a first nozzle, 12 is a second nozzle, 13 is a raw material fine particle injected from the first nozzle, and 14 is a raw material fine particle injected from the second nozzle. Moreover, the arrow in the figure and the block arrow show the substrate incident direction of each raw material fine particle 13 and 14. In the configuration shown in the figure, the incident direction of the raw material fine particles 13 is substantially parallel to the normal of the substrate surface (the substrate incident angle is approximately 0 degrees), and is mainly responsible for the formation of the film formation body 42. On the other hand, the raw material fine particles 14 mainly have a function of removing uncrushed raw material fine particles adhering to the surface of the film-forming body or particles that are not sufficiently crushed, so that the incident direction is limited to the normal line of the substrate surface. The angle is an angle at which the etching effect is manifested (the “etching effect manifests” here does not necessarily mean that film deposition does not occur at all, but the deposition rate decreases. “An angle at which the etching effect is manifested” means that the substrate incident angle is about 20 degrees or more (the same applies hereinafter). Further, the substrate collision speed of the raw material fine particles ejected from the nozzles 11 and 12, in other words, the carrier gas flow rate, the concentration of the raw material fine particles in the carrier gas, etc. is a condition that the dense film formation body 42 is formed. As appropriate. In addition, it can be selected in the same manner whether the raw material fine particles are continuously ejected from the nozzles 11 and 12 or intermittently.

  FIG. 2 schematically shows a case where a film-forming body is formed by raw material fine particles ejected from the first, second and third nozzles. In the figure, 21 is a first nozzle, 22 is a second nozzle, 23 is a third nozzle, 24 is a raw material fine particle injected from the first nozzle, 25 is a raw material fine particle injected from the second nozzle, Reference numeral 26 denotes raw material fine particles ejected from the third nozzle. Moreover, the arrow in the figure and the block arrow show the substrate incident direction of each raw material fine particle 24, 25, 26.

  The configuration shown in the figure corresponds to a variation of the configuration shown in FIG. That is, the incident direction of the raw material fine particles 24 is substantially parallel to the normal line of the substrate surface (the substrate incident angle is approximately 0 degrees), and is mainly responsible for the formation of the film formation body 42. On the other hand, since the raw material fine particles 25 and 26 mainly have a function of removing uncrushed raw material fine particles adhering to the surface of the film forming body or particles that are not sufficiently crushed, the incident direction is the normal line of the substrate surface. A finite angle is formed, and the value is set to an angle at which the etching effect becomes apparent. In addition, the substrate collision speed of the raw material fine particles ejected from the respective nozzles 21, 22, 23, in other words, the carrier gas flow rate, the concentration of the raw material fine particles in the carrier gas, and the like form the dense film formation body 42. Can be selected as appropriate. In addition, it can be selected in the same manner whether the raw material fine particles are continuously ejected from each nozzle 21, 22, 23 or intermittently.

  FIG. 3 schematically shows a case where a film-forming body is formed by raw material fine particles ejected from the first and second nozzles. In the figure, 31 is a first nozzle, 32 is a second nozzle, 33 is raw material fine particles ejected from the first nozzle, and 34 is raw material fine particles ejected from the second nozzle. Moreover, the arrow in the figure and the block arrow show the substrate incident direction of each raw material fine particle 33,34. The configuration shown in the figure is the same as the configuration shown in FIG. 1 in that it includes the first and second nozzles. However, the incident directions of the raw material fine particles 33 and the raw material fine particles 34 on the substrate are both the same. It differs in that it makes a certain angle with the normal of the substrate surface. In this configuration, the substrate incident angle of the raw material fine particles 33 and 34 is clearly recognized as an etching effect, but the film deposition effect is excellent (for example, the substrate incident angle is in the range of 20 degrees to 30 degrees). The film forming body is formed while etching is performed. Of course, it is possible to form a film-forming body while performing etching with a single nozzle. However, in such a case, the film-forming speed decreases, and it is not particularly suitable as a method for forming a film thickness exceeding 100 μm. . Therefore, if the number of nozzles is increased to 3 or more in the configuration shown in FIG. 3, it is possible to form a film-forming body having a desired film thickness in a short time.

  Hereinafter, embodiments of the present invention will be described in more detail using examples.

Film formation was performed using alumina particles having an average particle size of 0.7 μm as raw material fine particles and air as a carrier gas. The substrate and nozzle arrangement are substantially the same as those shown in FIG. The substrate incident angle of the alumina fine particles (corresponding to the raw material fine particles 13 in FIG. 1) ejected from the first nozzle (corresponding to the nozzle 11 in FIG. 1) is approximately 0 degrees, and the second nozzle (in FIG. The substrate incident angle of alumina fine particles (corresponding to the raw material fine particles 14 in FIG. 1) ejected from (corresponding) was set to approximately 30 degrees. The nozzle openings of the first and second nozzles are both 5 nm × 0.3 nm, and the substrate used is quartz glass. Moreover, the gas flow rates injected from the first and second nozzles were both set to 3 l / min. At this time, the substrate collision speed of the alumina fine particles ejected from the first and second nozzles was 220 m / s, and the obtained film formation speed was 10 μm / min.
During the film formation, the carrier gas flow rate described above was maintained, and an alumina film body having a film thickness of 120 μm was formed.

  In addition, although the film formation by only the alumina fine particles (corresponding to the raw material fine particles 13 in FIG. 1) ejected from the first nozzle (corresponding to the nozzle 11 in FIG. 1) was tried, the pressure was increased from around the film thickness exceeding 30 μm. Formation of powder was recognized, and it was not possible to form a film with a thickness of ultra 100 μm.

  A 100 μm thick alumina film was formed under the same conditions as in Example 1. However, the flow rate of the carrier gas injected from the first nozzle (corresponding to the nozzle 11 in FIG. 1) is 3 l / min, which is the same as that in the first embodiment, but in this embodiment, the second nozzle (see FIG. 1 corresponds to the nozzle 12), and the flow rate of the carrier gas injected from the nozzle 12 was set to 5 l / min. At this time, the substrate collision speed of the alumina fine particles injected from the second nozzle was 300 m / s, and the obtained film formation speed was 7 μm / min. During the film formation, the above-described carrier gas flow rate was maintained to form an alumina film body having a thickness of 100 μm.

  A 110 μm-thick alumina film was formed under the same conditions as in Example 2. However, the flow rate of the carrier gas injected from the first nozzle (corresponding to the nozzle 11 in FIG. 1) is 3 l / min, which is the same as in the second embodiment, but in this embodiment, the second nozzle (see FIG. The carrier gas type injected from the nozzle 12 in Fig. 1 is He, and its flow rate is 4 l / min. At this time, the substrate collision speed of the alumina fine particles injected from the second nozzle was 450 m / s, and no deposition of an alumina film was observed.

  In this example, the alumina fine particles were ejected intermittently from the second nozzle while the alumina fine particles were continuously ejected from the first nozzle. The injection scheme is shown in FIG. That is, 110 μm-thick alumina fine particles were formed by repeating a cycle of spraying alumina fine particles from the second nozzle for about 20 seconds every 2 minutes.

  A 120 μm-thick alumina film was formed under substantially the same conditions as in Example 3. However, in the case of the present example, both the first and second nozzles were intermittently ejected with alumina fine particles. The injection scheme is shown in FIG. That is, after repeating the injection of alumina fine particles from the first nozzle for 2 minutes and then stopping the injection, and then spraying the alumina fine particles from the second nozzle for about 20 seconds, an alumina film having a thickness of 120 μm is obtained. Formed.

Film formation was performed using alumina particles having an average particle size of 0.7 μm as raw material fine particles and air as a carrier gas. The substrate and nozzle arrangement are substantially the same as those shown in FIG. The substrate incident angle of the alumina fine particles (corresponding to the raw material fine particles 24 in FIG. 2) ejected from the first nozzle (corresponding to the nozzle 21 in FIG. 2) is approximately 0 degrees, and the second nozzle (into the nozzle 22 in FIG. 2). The substrate incident angle of the alumina fine particles (corresponding to the raw material fine particles 25 in FIG. 2) ejected from the corresponding nozzle is approximately 30 degrees, and the alumina fine particles (corresponding to the nozzle 23 in FIG. 2) (FIG. 2). The substrate incident angle of (corresponding to the raw material fine particles 26) in FIG. The substrate incident angles of the alumina fine particles ejected from the second and third nozzles have substantially the same absolute values and different signs (ie, the angles are substantially the same but the incident directions are different). The nozzle openings of the first, second and third nozzles are all 5 nm × 0.3 nm, and the substrate used is quartz glass. Moreover, the gas flow rates injected from the first, second, and third nozzles were both set to 3 l / min. At this time, the substrate collision speed of the alumina fine particles ejected from the first, second and third nozzles was 220 m / s, and the obtained film formation speed was 13 μm / min.
During the film formation, the carrier gas flow rate described above was maintained, and an alumina film body having a film thickness of 110 μm was formed.

Film formation was performed using alumina particles having an average particle size of 0.7 μm as raw material fine particles and air as a carrier gas. The substrate and nozzle arrangement are substantially the same as those shown in FIG. The substrate incident angle of the alumina fine particles (corresponding to the raw material fine particles 33 in FIG. 3) ejected from the first nozzle (corresponding to the nozzle 31 in FIG. 3) is approximately 30 degrees, and the second nozzle (into the nozzle 32 in FIG. 3). The substrate incident angle of alumina fine particles (corresponding to the raw material fine particles 34 in FIG. 3) ejected from (corresponding) was set to approximately 30 degrees. The substrate incident angles of the alumina fine particles ejected from the first and second nozzles have substantially the same absolute value and are different in sign from each other (that is, the angles are substantially the same but the incident directions are different). The nozzle openings of the first and second nozzles are both 5 nm × 0.3 nm, and the substrate used is quartz glass. Moreover, the gas flow rates injected from the first and second nozzles were both set to 3 l / min. At this time, the substrate collision speed of the alumina fine particles ejected from the first and second nozzles was both 220 m / s, and the obtained film formation speed was 6 μm / min.
During the film formation, the carrier gas flow rate described above was maintained, and an alumina film body having a thickness of 100 μm was formed.

  Although the present invention has been described in detail with reference to the embodiments, the present invention is not limited to the above-described carrier gas type, flow rate, carrier gas injection scheme, or material fine particle material, and further, the number of nozzles and the material fine particle substrate. It is not limited to the incident angle or the like.

  The film-forming method according to the present invention is useful for forming a film-forming body having a thickness exceeding 100 μm using the AD method, and can be used in the industrial field related to parts and materials using the film-forming body. It is.

It is a schematic diagram which shows the relationship between a board | substrate position and a nozzle. It is a schematic diagram which shows the relationship between a board | substrate position and a nozzle. It is a schematic diagram which shows the relationship between a board | substrate position and a nozzle. It is a schematic diagram for demonstrating a substrate incident angle. It is a figure which shows the relationship between the film thickness of a film-forming body, and a substrate incident angle. It is a figure which shows the relationship between a film thickness reduction amount and a substrate incident angle. It is the schematic which showed the basic composition of the film-forming apparatus using AD method. It is the schematic which showed typically the cross-sectional structure | tissue of the sample formed by AD method. It is the figure which showed typically the relationship between the pressure which generate | occur | produces by the board | substrate collision of raw material fine particles, and the distortion which generate | occur | produces in a film-forming body layer and a green compact layer. It is a figure which shows the injection scheme of carrier gas. It is a diagram showing a carrier gas injection scheme

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 1st nozzle 12 2nd nozzle 13 Raw material fine particle injected from 1st nozzle 14 Raw material fine particle injected from 2nd nozzle 21 1st nozzle 22 2nd nozzle 23 3rd nozzle 24 1st Raw material fine particles ejected from the second nozzle 25 Raw material fine particles ejected from the second nozzle 25 Raw material fine particles ejected from the second nozzle 26 Raw material fine particles ejected from the third nozzle 31 First nozzle 32 Second Nozzle 33 Raw material fine particles ejected from the first nozzle 34 Raw material fine particles ejected from the second nozzle 41 Substrate 42 Film formed 43 Nozzle 44 Nozzle opening 45 Raw material fine particles ejected by the nozzle opening 44 46 Composition Shape of film body 47 Equivalent film thickness 71 Substrate to be deposited 72 XY stage 73 Nozzle 74 Deposition chamber 75 Classifier 76 Aerozo Generator 77 High-pressure gas supply source 78 Mass flow controller 79 Pipeline 81 Substrate 82 Deposition body layer 83 Green compact layer P The point where the thickest point is projected on the substrate

Claims (5)

  The raw material fine particles are mixed with a carrier gas to be aerosolized, and together with the carrier gas, the raw material fine particles are accelerated through a plurality of nozzles arranged in parallel and sprayed toward the deposition substrate surface, thereby forming a film-formed body in the decompression chamber. In the aerosol deposition method to be formed, the raw material fine particles accelerated and jetted from the plurality of nozzles are incident on substantially the same location on the deposition surface of the deposition target substrate, and the raw material fine particles accelerated and jetted from each nozzle A method for forming a film-formed body by an aerosol deposition method, wherein the incident direction on the substrate to be deposited is different.   The aerosolized raw material in which the flow rate of the carrier gas containing the aerosolized raw material fine particles injected from at least one of the plurality of nozzles or the density of the raw material fine particles in the carrier gas is injected from the other nozzles 2. The method of forming a film-forming body by the aerosol deposition method according to claim 1, wherein the flow rate of the carrier gas containing fine particles is different from the concentration of the raw material fine particles in the carrier gas.   The method for forming a film-forming body by an aerosol deposition method according to claim 1, wherein the carrier gas containing the aerosolized raw material fine particles is intermittently ejected from at least one of the plurality of nozzles.   The angle formed by one of incident directions of the raw material particles acceleratedly jetted from the plurality of nozzles on the deposition target substrate and a deposition target surface of the deposition target substrate is approximately 90 degrees. 3. A method for forming a film-forming body by the aerosol deposition method according to any one of 3 above.   At least one of the angle formed between the incident direction of the raw material fine particles sprayed from the plurality of nozzles on the deposition target substrate and the deposition target surface of the deposition target substrate is substantially the same, and the angle is 90 degrees or less. The method for forming a film-forming body by the aerosol deposition method according to any one of claims 1 to 3.

Images