CN112614769B - Silicon carbide etching process cavity device and using method - Google Patents

Silicon carbide etching process cavity device and using method Download PDF

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CN112614769B
CN112614769B CN202011446420.4A CN202011446420A CN112614769B CN 112614769 B CN112614769 B CN 112614769B CN 202011446420 A CN202011446420 A CN 202011446420A CN 112614769 B CN112614769 B CN 112614769B
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silicon carbide
gas
ring
etching
electrostatic
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CN112614769A (en
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廖海涛
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Wuxi Yiwen Microelectronics Technology Co.,Ltd.
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Advanced Materials Technology and Engineering Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

The invention relates to the technical field of silicon carbide wafer etching, in particular to a silicon carbide etching process cavity device and a using method thereof, and the silicon carbide etching process cavity device comprises a wafer positioning ring, an edge ring, a gathering ring, an electrostatic disc and an insulating ring, wherein a lower electrode is arranged inside the insulating ring and is electrically connected with an external first radio frequency power supply, the top end of the insulating ring is fixedly connected with a lower water disc, the upper surface of the lower water disc is provided with an annular groove, an annular heat conducting sheet is arranged inside the annular groove, the electrostatic disc is in a three-layer stepped cylindrical shape, the edge ring is sleeved on the outer walls of an upper layer and a middle stepped cylindrical shape together, the wafer positioning ring is fixed on the upper surface of the edge ring, and the gathering ring is sleeved on the outer wall of the lower stepped cylindrical shape; according to the invention, the silicon carbide wafer can be flatly attached to the upper surface of the electrostatic disk, so that the influence of mechanical external force on the silicon carbide wafer in the process is reduced to the maximum extent, and the overall yield is further ensured; the gas spray header can also rotate in a reciprocating and circulating way, and can effectively prevent the formation of micro-grooves at the corners of the etched pattern.

Description

Silicon carbide etching process cavity device and using method
Technical Field
The invention relates to the technical field of silicon carbide wafer etching, in particular to a silicon carbide etching process cavity device and a using method thereof.
Background
With the rapid development of science and technology, higher and higher requirements are put forward on the performance of power semiconductor devices. The power device used at present is mainly made of traditional semiconductor materials such as silicon and the like, and the electrical performance of the device is difficult to continuously and greatly improve due to the limitation of material performance; moreover, devices made of the materials can not work for a long time in severe environments such as high temperature and strong radiation, and especially in the fields of new energy, automobile electronics, aerospace and the like, the traditional silicon power devices are gradually insufficient. Among the many new semiconductor materials, silicon carbide (SiC) material has become the material of choice for the fabrication of new semiconductor power devices and circuits with its good physical and electrical properties. Particularly in the application fields of high-temperature, high-voltage and high-frequency power electronics, the SiC power device has more advantages and potentials which are difficult to compare with a silicon power device.
The etching technology is a key supporting technology in the development of the SiC device, and the etching precision, the etching damage and the residues on the etching surface of the etching technology have important influence on the performance of the SiC device. Because the SiC material has high hardness and stable chemical properties, and wet etching can not meet the requirements, the existing SiC etching process usually adopts a plasma dry etching process, and the basic etching process comprises the following steps: forming a SiO2 mask with a pattern on a SiC wafer, and placing the SiC wafer in a cavity of an etching device; introducing sulfur hexafluoride gas and oxygen gas serving as etching gases into the chamber, respectively applying voltage to an upper radio frequency electrode and a lower radio frequency electrode of the etching equipment to generate arc discharge, and ionizing part of the etching gases to generate ions, electrons and free radicals, wherein a gas phase substance formed by the partially ionized gases is called plasma; the plasma moves to the surface of the SiC wafer at a high speed under the action of the electric field, and the exposed SiC wafer is etched through the double actions of chemical reaction and physical bombardment to form a pattern on the SiC wafer.
For example, the utility model with patent number 201120510365.0 discloses a low etching rate plasma etching chamber, wherein the gas shower head material used as the upper electrode is set as quartz, and the dielectric constant of the quartz material is small, so the radio frequency coupling on the surface of the wafer is poor, thereby reducing the etching rate; when fluorocarbon is included in the etching gas, the etching rate is also reduced because the quartz showerhead consumes a part of the active species. By adopting the quartz material to manufacture the gas spray header, the high fluorocarbon flow and the high radio frequency power can be controlled to finish the low-speed etching, so that the accurate control is convenient, and the reliability and the stability of the etching process are improved. However, the utility model still has some disadvantages: the mechanical pressing mode reduces the utilization rate of the edge of the wafer, the stress is uneven, the wafer is warped, and the risk of causing dark injury is caused; micro grooves are easily formed at the junctions of the corners and the side walls of the etched graph, the phenomenon is more serious particularly when the critical dimension of the graph is small, and residues in the etched grooves are not easy to discharge, so that the etching is not uniform.
Disclosure of Invention
Aiming at the problems in the background art, the invention designs the silicon carbide etching process cavity device and the use method thereof, so that the mechanical external force influence on the wafer in the process is reduced to the greatest extent, and the overall yield of the wafer is also ensured.
The invention is realized by the following technical scheme:
a cavity device for silicon carbide etching process and a using method thereof comprise a wafer positioning ring, an edge ring, a gathering ring, an electrostatic disk, a lower water disk and an insulating ring, wherein a lower electrode is arranged inside the insulating ring and is electrically connected with an external first radio frequency power supply, the top end of the insulating ring is fixedly connected with the lower water disk, a semiconductor refrigerator is fixedly arranged at the central position inside the lower water disk, a cooling water circulation area is formed around the semiconductor refrigerator, a water inlet and a water outlet are formed in the lower surface of the lower water disk, an annular groove is formed in the upper surface of the lower water disk, an annular heat conducting fin is arranged inside the annular groove, the top surface of the annular heat conducting fin is fixed with the electrostatic disk, the electrostatic disk is used for electrostatically adsorbing a silicon carbide wafer, the electrostatic disk is in a three-layer stepped cylindrical shape, the edge ring which plays a role in protecting the edge of the electrostatic disk is sleeved on the outer walls of the upper layer and the middle stepped cylindrical shape together, the upper surface of the edge ring is fixed with a wafer positioning ring for limiting the accurate placement range of the silicon carbide wafer, and the outer wall of the lower-layer stepped cylinder is sleeved with the gathering ring for gathering process energy around the silicon carbide wafer;
the lower electrode and the insulating ring are fixed on the bottom surface of the etching chamber, the bottom of the etching chamber is sequentially connected with a molecular pump and a dry pump through a suction pipe, the top of the etching chamber is provided with an air inlet pipe, the bottom outer wall of the air inlet pipe is rotatably provided with a connecting pipe through a sealing bearing, the bottom end of the connecting pipe is communicated with a gas spray head, the bottom end surface of the gas spray head is uniformly provided with gas through holes, the outer wall of the connecting pipe is fixed with an upper driven gear and a lower driven gear, the upper driven gear and the lower driven gear are driven by a driving structure, the driving structure comprises a rotating shaft, an upper incomplete gear, a lower incomplete gear and a driving motor, the upper incomplete gear and the lower incomplete gear are both fixed on the outer wall of the rotating shaft, the top end of the rotating shaft is connected with the driving motor through a speed reducer, and the top surface of the etching chamber is also fixed with an upper electrode, the upper electrode is electrically connected with an external second radio frequency power supply.
As a further improvement of the above scheme, an intermediate gear is in meshed connection between the upper incomplete gear and the upper driven gear, and the lower incomplete gear is in direct meshed connection with the lower driven gear.
As a further improvement of the scheme, the water inlet is communicated with the water storage tank through a water inlet pipe and a vacuum pump, and the water outlet is communicated with the recovery tank through a water outlet pipe.
As a further improvement of the scheme, the silicon carbide wafer comprises a patterned photoresist mask layer, a silicon oxide layer and a lower semiconductor device layer from top to bottom.
As a further improvement of the scheme, the etching gas is introduced into the gas inlet pipe and comprises hydrogen bromide gas, trifluoromethane gas and oxygen, and the gas flow ratio of the hydrogen bromide gas to the trifluoromethane gas to the oxygen is 1: 7.
As a further improvement of the scheme, the output power of the first radio frequency power supply is 250-300W, and the output power of the second radio frequency power supply is 1000-1100W.
As a further improvement of the scheme, the gathering ring is made of ceramic materials, and the gathering ring enables effective charges to be gathered in the etching process area of the silicon carbide wafer.
As a further improvement of the above scheme, an electrostatic adsorption host and an adsorption controller are further arranged inside the electrostatic disk, the electrostatic adsorption host has leakage protection, current overload protection and high-voltage pulse protection, and the adsorption controller is used for controlling the state of the circuit.
A use method of a silicon carbide etching process cavity device comprises the following steps:
a. firstly, placing a silicon carbide wafer to be etched in a wafer positioning ring, and enabling an electrostatic disk to adsorb the silicon carbide wafer after being powered on;
b. introducing etching gas into the gas spray header through a gas inlet pipe arranged at the top of the etching chamber, simultaneously applying a voltage V1 to the lower electrode by using a first radio frequency power supply, applying a voltage V2 to the upper electrode by using a second radio frequency power supply, and generating arc discharge between the upper electrode and the lower electrode to ionize partial etching gas to form plasma;
c. the plasma moves to the surface of the silicon carbide wafer at a high speed under the action of an electric field formed between the upper electrode and the lower electrode, so that physical bombardment and chemical reaction etching can be carried out on the surface of the silicon carbide wafer;
d. in the etching process, because the chemical reaction can release or absorb heat, the semiconductor refrigerator in the lower water tray can work, and the silicon carbide wafer can keep a certain temperature by combining the flow of cooling water so as to ensure the uniformity of etching;
e. and pumping reaction products and residual gas in the etching process to the outside through a molecular pump and a dry pump.
Compared with the prior art, the invention has the beneficial effects that:
1. the electrostatic chuck is arranged, the electrostatic adsorption host machine and the adsorption controller are arranged in the electrostatic chuck, and after the electrostatic adsorption host machine is electrified, the silicon carbide wafer can be effectively adsorbed by utilizing the electromagnetic force of the electrostatic chuck according to the coulomb law and the lorentz law, the silicon carbide wafer can be flatly attached to the upper surface of the electrostatic chuck, the influence of mechanical external force on the silicon carbide wafer in the process is reduced to the maximum extent, the integral yield of the silicon carbide wafer is further ensured, the mechanical structure is reduced, the maintenance period is prolonged, and the maintenance cost is reduced.
2. In the invention, a connecting pipe is rotatably arranged on the outer wall of the bottom end of an air inlet pipe through a sealed bearing, the bottom end of the connecting pipe is communicated with a gas spray header, an upper driven gear and a lower driven gear are fixed on the outer wall of the connecting pipe, the upper driven gear and the lower driven gear are driven by a driving structure, the driving structure comprises a rotating shaft, an upper incomplete gear, a lower incomplete gear and a driving motor, when the driving motor drives the rotating shaft to rotate clockwise, the lower incomplete gear is meshed with the lower driven gear in the upper half period and then drives the connecting pipe and the gas spray header to rotate anticlockwise, in the lower half period, the upper incomplete gear drives the upper driven gear to rotate clockwise through an intermediate gear and then drives the connecting pipe and the gas spray header to rotate clockwise, so that the driving structure can drive the gas spray header to rotate in a reciprocating manner clockwise and anticlockwise, and can effectively prevent micro grooves at corners of etched patterns from forming, meanwhile, the method is also beneficial to discharging residues in the groove, and the uniformity of etching is ensured.
3. In the invention, a semiconductor refrigerator is fixedly arranged at the central position in the water tray, a cooling water circulation area is formed around the semiconductor refrigerator, a water inlet and a water outlet are formed in the lower surface of the lower water tray, and the semiconductor refrigerator can further cool the cooling water in the circulation area after being electrified, so that the silicon carbide wafer can be kept at a certain temperature to ensure the etching uniformity; and the cooling water can circularly flow by combining the use of the water inlet pipe, the vacuum pump and the water outlet pipe, so that the cooling effect can be further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of the internal structure of the present invention;
FIG. 2 is a schematic view of the assembly mounting on the bottom surface of the etching chamber in the present invention;
FIG. 3 is a top view of FIG. 2 of the present invention;
FIG. 4 is a first perspective view of the showerhead and its peripheral components in accordance with the present invention;
FIG. 5 is a second perspective view of the showerhead and its peripheral components in accordance with the present invention;
FIG. 6 is a schematic view showing the assembly installation on the bottom surface of an etching chamber in example 2 of the present invention.
Wherein, 1-wafer positioning ring, 2-edge ring, 3-gathering ring, 4-electrostatic disk, 5-water-discharging disk, 6-insulating ring, 7-driving structure, 701-rotating shaft, 702-upper incomplete gear, 703-lower incomplete gear, 704-driving motor, 705-speed reducer, 706-intermediate gear, 8-lower electrode, 9-first radio frequency power supply, 10-semiconductor refrigerator, 11-water inlet, 12-water outlet, 13-annular groove, 14-annular heat conducting sheet, 15-etching chamber, 16-suction pipe, 17-molecular pump, 18-dry pump, 19-air inlet pipe, 20-connecting pipe, 21-gas shower head, 22-upper driven gear, 23-lower driven gear, 24-upper electrode, 25-second radio frequency power supply, 26-water inlet pipe, 27-vacuum pump, 28-water storage tank, 29-water outlet pipe, 30-recycling tank and 31-silicon carbide wafer.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", etc. indicate orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are used primarily to better describe the invention and its embodiments and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides orientation or positional relationship, for example, the term "upper" may also be used to indicate a certain attaching or connecting relationship in some cases. The specific meanings of these terms in the present invention can be understood by those skilled in the art as appropriate.
Moreover, the terms "mounted," "disposed," "provided," "connected," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meanings of the above terms in the present invention can be understood by those of ordinary skill in the art according to specific situations.
The present invention will be further described with reference to the accompanying drawings 1 to 6.
A silicon carbide etching process cavity device and a using method thereof comprise a wafer positioning ring 1, an edge ring 2, a gathering ring 3, an electrostatic disk 4, a water discharging disk 5 and an insulating ring 6, wherein a lower electrode 8 is arranged inside the insulating ring 6, the lower electrode 8 is electrically connected with an external first radio frequency power supply 9, the top end of the insulating ring 6 is fixedly connected with the water discharging disk 5, a semiconductor refrigerator 10 is fixedly arranged at the central position inside the water discharging disk 5, a cooling water circulation area is formed around the semiconductor refrigerator 10, a water inlet 11 and a water outlet 12 are formed in the lower surface of the water discharging disk 5, an annular groove 13 is formed in the upper surface of the water discharging disk 5, an annular heat conducting strip 14 is arranged inside the annular groove 13, the top surface of the annular heat conducting strip 14 is fixed with the electrostatic disk 4, the electrostatic disk 4 is used for electrostatically adsorbing a silicon carbide wafer 31, the silicon carbide wafer 31 comprises a patterned photoresist mask layer from top to bottom, The electrostatic disc 4 is in a three-layer stepped cylindrical shape, the outer walls of the upper and middle stepped cylindrical shapes are sleeved with an edge ring 2 which protects the edge of the electrostatic disc 4, the upper surface of the edge ring 2 is fixed with a wafer positioning ring 1 which is used for limiting the accurate placement range of the silicon carbide wafer 31, and the outer wall of the lower stepped cylindrical shape is sleeved with a gathering ring 3 which concentrates process energy around the silicon carbide wafer 31;
the lower electrode 8 and the insulating ring 6 are fixed on the bottom surface of the etching chamber 15, the bottom of the etching chamber 15 is sequentially connected with a molecular pump 17 and a dry pump 18 through a suction pipe 16, the top of the etching chamber 15 is provided with an air inlet pipe 19, the outer wall of the bottom end of the air inlet pipe 19 is rotatably provided with a connecting pipe 20 through a sealed bearing, the bottom end of the connecting pipe 20 is communicated with an air spray header 21, the bottom end surface of the air spray header 21 is uniformly provided with air through holes, the outer wall of the connecting pipe 20 is fixedly provided with an upper driven gear 22 and a lower driven gear 23, the upper driven gear 22 and the lower driven gear 23 are driven by a driving structure 7, the driving structure 7 comprises a rotating shaft 701, an upper incomplete gear 702, a lower incomplete gear 703 and a driving motor 704, the upper incomplete gear 702 and the lower incomplete gear 703 are both fixed on the outer wall of the rotating shaft 701, the top end of the rotating shaft 701 is connected with the driving motor 704 through a speed reducer 705, the top surface of the etching chamber 15 is also fixed with an upper electrode 24, and the upper electrode 24 is electrically connected with an external second radio frequency power supply 25; an intermediate gear 706 is meshed and connected between the upper incomplete gear 702 and the upper driven gear 22, and the lower incomplete gear 703 is directly meshed and connected with the lower driven gear 23.
Wherein, the inside of the air inlet pipe 19 is filled with etching gas, the etching gas comprises hydrogen bromide gas, trifluoromethane gas and oxygen, and the gas flow ratio of the hydrogen bromide gas, the trifluoromethane gas and the oxygen is 1: 7; the output power of the first radio frequency power supply 9 is 250-300W, and the output power of the second radio frequency power supply 25 is 1000-1100W; the gathering ring 3 is made of ceramic materials, and the gathering ring 3 enables effective charges to be gathered in an etching process area of the silicon carbide wafer 31; the inside of electrostatic disk 4 still is equipped with electrostatic absorption host computer and absorption controller, and the electrostatic absorption host computer has earth leakage protection, current overload protection and high-voltage pulse protection, and absorption controller is used for the state of control circuit.
Example 1
As shown in figures 1-5, a silicon carbide etching process cavity device and a using method thereof comprise a wafer positioning ring 1, an edge ring 2, a gathering ring 3, an electrostatic disk 4, a lower water disk 5 and an insulating ring 6, wherein a lower electrode 8 is arranged inside the insulating ring 6, the lower electrode 8 is electrically connected with an external first radio frequency power supply 9, the top end of the insulating ring 6 is fixedly connected with the lower water disk 5, a semiconductor refrigerator 10 is fixedly arranged at the central position inside the lower water disk 5, a cooling water circulation area is formed around the semiconductor refrigerator 10, a water inlet 11 and a water outlet 12 are formed in the lower surface of the lower water disk 5, an annular groove 13 is formed in the upper surface of the lower water disk 5, an annular heat conducting sheet 14 is arranged inside the annular groove 13, the top surface of the annular heat conducting sheet 14 is fixed with the electrostatic disk 4, the electrostatic disk 4 is used for electrostatically adsorbing a silicon carbide wafer 31, the silicon carbide wafer 31 comprises a patterned photoresist mask layer from top to bottom, The electrostatic disc 4 is in a three-layer stepped cylindrical shape, the outer walls of the upper and middle stepped cylindrical shapes are sleeved with an edge ring 2 which protects the edge of the electrostatic disc 4, the upper surface of the edge ring 2 is fixed with a wafer positioning ring 1 which is used for limiting the accurate placement range of the silicon carbide wafer 31, and the outer wall of the lower stepped cylindrical shape is sleeved with a gathering ring 3 which concentrates process energy around the silicon carbide wafer 31;
the lower electrode 8 and the insulating ring 6 are fixed on the bottom surface of the etching chamber 15, the bottom of the etching chamber 15 is sequentially connected with a molecular pump 17 and a dry pump 18 through a suction pipe 16, the top of the etching chamber 15 is provided with an air inlet pipe 19, the outer wall of the bottom end of the air inlet pipe 19 is rotatably provided with a connecting pipe 20 through a sealed bearing, the bottom end of the connecting pipe 20 is communicated with an air spray header 21, the bottom end surface of the air spray header 21 is uniformly provided with air through holes, the outer wall of the connecting pipe 20 is fixedly provided with an upper driven gear 22 and a lower driven gear 23, the upper driven gear 22 and the lower driven gear 23 are driven by a driving structure 7, the driving structure 7 comprises a rotating shaft 701, an upper incomplete gear 702, a lower incomplete gear 703 and a driving motor 704, the upper incomplete gear 702 and the lower incomplete gear 703 are both fixed on the outer wall of the rotating shaft 701, the top end of the rotating shaft 701 is connected with the driving motor 704 through a speed reducer 705, the top surface of the etching chamber 15 is also fixed with an upper electrode 24, and the upper electrode 24 is electrically connected with an external second radio frequency power supply 25; an intermediate gear 706 is meshed and connected between the upper incomplete gear 702 and the upper driven gear 22, and the lower incomplete gear 703 is directly meshed and connected with the lower driven gear 23.
Wherein, the inside of the air inlet pipe 19 is filled with etching gas, the etching gas comprises hydrogen bromide gas, trifluoromethane gas and oxygen, and the gas flow ratio of the hydrogen bromide gas, the trifluoromethane gas and the oxygen is 1: 7; the output power of the first radio frequency power supply 9 is 280W, and the output power of the second radio frequency power supply 25 is 1050W; the gathering ring 3 is made of ceramic materials, and the gathering ring 3 enables effective charges to be gathered in an etching process area of the silicon carbide wafer 31; the inside of electrostatic disk 4 still is equipped with electrostatic absorption host computer and absorption controller, and the electrostatic absorption host computer has earth leakage protection, current overload protection and high-voltage pulse protection, and absorption controller is used for the state of control circuit.
A use method of a silicon carbide etching process cavity device comprises the following steps:
a. firstly, placing a silicon carbide wafer 31 to be etched in a wafer positioning ring 1, and enabling an electrostatic disk 4 to adsorb the silicon carbide wafer 31 after being powered on;
b. etching gas is introduced into the gas spray header 21 through the gas inlet pipe 19 arranged at the top of the etching chamber 15, meanwhile, the first radio frequency power supply 9 applies voltage V1 to the lower electrode 8, the second radio frequency power supply 25 applies voltage V2 to the upper electrode 24, and arc discharge is generated between the upper electrode 24 and the lower electrode 8, so that partial etching gas is ionized to form plasma;
c. the plasma moves to the surface of the silicon carbide wafer 31 at a high speed under the action of an electric field formed between the upper electrode 24 and the lower electrode 8, so that the surface of the silicon carbide wafer 31 can be subjected to physical bombardment and chemical reaction etching;
d. in the etching process, because the chemical reaction can release or absorb heat, the semiconductor refrigerator 10 in the lower water tray 5 can work, and the silicon carbide wafer 31 can keep a certain temperature by combining the flow of cooling water so as to ensure the uniformity of etching;
e. the reaction products and the residual gas in the etching process are pumped to the outside through the molecular pump 17 and the dry pump 18.
In the use process of the embodiment, the electrostatic adsorption host and the adsorption controller are further arranged in the electrostatic disk 4, and after the electrostatic adsorption host is electrified, the electrostatic adsorption host can effectively adsorb the silicon carbide wafer 31 by utilizing the electromagnetic force of the electrostatic disk 4 according to the coulomb law and the lorentz law, the silicon carbide wafer 31 can be flatly attached to the upper surface of the electrostatic disk 4, the influence of mechanical external force on the silicon carbide wafer 31 in the technological process is reduced to the maximum extent, and the overall yield of the silicon carbide wafer 31 is further ensured; meanwhile, the driving motor 704 can drive the rotating shaft 701 to rotate clockwise, the lower incomplete gear 703 is meshed with the lower driven gear 23 in the first half period, so that the connecting pipe 20 and the gas spray header 21 can be driven to rotate anticlockwise, the upper incomplete gear 702 drives the upper driven gear 22 to rotate clockwise through the intermediate gear 706 in the second half period, so that the connecting pipe 20 and the gas spray header 21 can be driven to rotate clockwise, the driving structure 7 can drive the gas spray header 21 to rotate in a clockwise and anticlockwise reciprocating mode, the formation of micro-grooves at the corners of the etched patterns can be effectively prevented, meanwhile, the discharging of residues in the grooves is facilitated, and the uniformity of etching is ensured.
Example 2
Embodiment 2 on the basis of embodiment 1, as shown in fig. 6, the water inlet 11 is communicated with the water storage tank 28 through a water inlet pipe 26 and a vacuum pump 27, and the water outlet 12 is communicated with the recovery tank 30 through a water outlet pipe 29.
In the use process of the embodiment, after the semiconductor refrigerator 10 is powered on, the cooling water in the circulating area can be further cooled, so that the silicon carbide wafer 31 can be kept at a certain temperature to ensure the uniformity of etching; and the water inlet pipe 26, the vacuum pump 27 and the water outlet pipe 29 are combined for use, so that cooling water can flow circularly, and the cooling effect can be further improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (8)

1. A silicon carbide etching process cavity device is characterized in that: comprises a wafer positioning ring (1), an edge ring (2), a gathering ring (3), an electrostatic disk (4), a lower water disk (5) and an insulating ring (6); the electrostatic precipitator is characterized in that a lower electrode (8) is arranged inside the insulating ring (6), the lower electrode (8) is electrically connected with an external first radio frequency power supply (9), the top end of the insulating ring (6) is fixedly connected with the water discharging disc (5), a semiconductor refrigerator (10) is fixedly installed at the central position inside the water discharging disc (5), a cooling water circulation area is formed around the semiconductor refrigerator (10), a water inlet (11) and a water outlet (12) are formed in the lower surface of the water discharging disc (5), an annular groove (13) is formed in the upper surface of the water discharging disc (5), an annular heat conducting fin (14) is arranged inside the annular groove (13), the top surface of the annular heat conducting fin (14) is fixed with the electrostatic precipitation disc (4), the electrostatic precipitation disc (4) is used for electrostatically adsorbing a silicon carbide wafer (31), and the electrostatic precipitation disc (4) is in a three-layer stepped cylindrical shape, the outer walls of the upper layer and the middle step cylinder are sleeved with the edge ring (2) which protects the edge of the electrostatic disc (4), the upper surface of the edge ring (2) is fixed with a wafer positioning ring (1) used for limiting the accurate placement range of the silicon carbide wafer (31), and the outer wall of the lower layer step cylinder is sleeved with the gathering ring (3) which concentrates process energy around the silicon carbide wafer (31);
lower electrode (8) and on insulating ring (6) all were fixed in the bottom surface of sculpture room (15), the bottom of sculpture room (15) has connected gradually molecular pump (17) and dry pump (18) through suction tube (16), intake pipe (19) are installed at the top of sculpture room (15), connecting pipe (20) are installed through sealed bearing rotation to the bottom outer wall of intake pipe (19), the bottom intercommunication of connecting pipe (20) has gas shower head (21), gas through-hole has evenly been seted up to the bottom face of gas shower head (21), the outer wall of connecting pipe (20) is fixed with driven gear (22) and lower driven gear (23), go up driven gear (22) and driven gear (23) down and drive by drive structure (7), drive structure (7) include axis of rotation (701), go up incomplete gear (702), The etching chamber comprises a lower incomplete gear (703) and a driving motor (704), wherein the upper incomplete gear (702) and the lower incomplete gear (703) are fixed on the outer wall of a rotating shaft (701), the top end of the rotating shaft (701) is connected with the driving motor (704) through a speed reducer (705), an upper electrode (24) is further fixed on the top surface of the etching chamber (15), and the upper electrode (24) is electrically connected with an external second radio frequency power supply (25); an intermediate gear (706) is in meshed connection between the upper incomplete gear (702) and the upper driven gear (22), and the lower incomplete gear (703) is in direct meshed connection with the lower driven gear (23).
2. The silicon carbide etching process chamber device of claim 1, wherein: the water inlet (11) is communicated with a water storage tank (28) through a water inlet pipe (26) and a vacuum pump (27), and the water outlet (12) is communicated with a recovery tank (30) through a water outlet pipe (29).
3. The silicon carbide etching process chamber device of claim 1, wherein: the silicon carbide wafer (31) includes, from top to bottom, a patterned photoresist mask layer, a silicon oxide layer, and an underlying semiconductor device layer.
4. The silicon carbide etching process chamber device of claim 1, wherein: the gas inlet pipe (19) is internally filled with etching gas, the etching gas comprises hydrogen bromide gas, trifluoromethane gas and oxygen, and the gas flow ratio of the hydrogen bromide gas to the trifluoromethane gas to the oxygen is 1: 1: 7.
5. the silicon carbide etching process chamber device of claim 1, wherein: the output power of the first radio frequency power supply (9) is 250-300W, and the output power of the second radio frequency power supply (25) is 1000-1100W.
6. The silicon carbide etching process chamber device of claim 1, wherein: the gathering ring (3) is made of ceramic materials, and the gathering ring (3) enables effective charges to be gathered in an etching process area of the silicon carbide wafer (31).
7. The silicon carbide etching process chamber device of claim 1, wherein: the electrostatic chuck (4) is internally provided with an electrostatic adsorption host and an adsorption controller, the electrostatic adsorption host is provided with leakage protection, current overload protection and high-voltage pulse protection, and the adsorption controller is used for controlling the state of a circuit.
8. The use method of the silicon carbide etching process cavity device according to claim 1, characterized by comprising the following steps:
a. firstly, a silicon carbide wafer (31) to be etched is placed in a wafer positioning ring (1), and the silicon carbide wafer (31) can be adsorbed after an electrostatic disk (4) is powered on;
b. etching gas is introduced into the gas spray head (21) through a gas inlet pipe (19) arranged at the top of the etching chamber (15), meanwhile, a first radio frequency power supply (9) applies voltage V1 to a lower electrode (8), a second radio frequency power supply (25) applies voltage V2 to an upper electrode (24), arc discharge is generated between the upper electrode (24) and the lower electrode (8), and partial etching gas is ionized to form plasma;
c. the plasma moves to the surface of the silicon carbide wafer (31) at high speed under the action of an electric field formed between the upper electrode (24) and the lower electrode (8), so that the surface of the silicon carbide wafer (31) can be subjected to physical bombardment and chemical reaction etching;
d. in the etching process, because the chemical reaction can release or absorb heat, the semiconductor refrigerator (10) in the lower water tray (5) can work, and the silicon carbide wafer (31) can keep a certain temperature by combining the flow of cooling water so as to ensure the uniformity of etching;
e. reaction products and residual gas in the etching process are pumped to the outside through a molecular pump (17) and a dry pump (18).
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