CN209119040U - Semiconductor equipment - Google Patents
Semiconductor equipment Download PDFInfo
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- CN209119040U CN209119040U CN201920026431.3U CN201920026431U CN209119040U CN 209119040 U CN209119040 U CN 209119040U CN 201920026431 U CN201920026431 U CN 201920026431U CN 209119040 U CN209119040 U CN 209119040U
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- Prior art keywords
- processing chamber
- electrode
- semiconductor equipment
- equipment
- sliding block
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 38
- 238000007789 sealing Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 18
- 230000007246 mechanism Effects 0.000 abstract description 6
- 230000002829 reductive effect Effects 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000002452 interceptive effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 13
- 238000000927 vapour-phase epitaxy Methods 0.000 description 12
- 229910052736 halogen Inorganic materials 0.000 description 11
- 150000002367 halogens Chemical class 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 229910000039 hydrogen halide Inorganic materials 0.000 description 2
- 239000012433 hydrogen halide Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000031709 bromination Effects 0.000 description 1
- 238000005893 bromination reaction Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The utility model provide one kind can processing chamber inner wall carry out clean semiconductor equipment, be related to semiconductor equipment and manufacture and design field.The semiconductor equipment includes: processing chamber；Electrode pair is configured to the mechanism moved back and forth in processing chamber and outside processing chamber；Power supply, electrode is to being electrically connected to a power source, and when electrode is to being moved in processing chamber, the electrode of energization is to can ionize the indoor gas of process cavity.Semiconductor equipment provided by the utility model cleans the inner wall of processing chamber by plasma of its chamber internal electrode to generation, reduces the energy consumption of cleaning equipment, while can effectively ensure that the clean-up performance to working cavity inner wall.In addition, electrode can be reduced to outside processing chamber to retractable structure is arranged to when executing technical process, its interfering with each other with technical process is prevented.
Description
Technical field
The utility model relates to semiconductor equipments to manufacture and design field, and in more detail, the utility model relates to a kind of tools
There is the semiconductor equipment of high-efficiency cleaning function.
Background technique
The processing chamber of semiconductor equipment needs to be cleaned after completing process flow, traditional dry clean (Dry
Clean) cavity made of quartz is heated to 1300 DEG C or so using infrared lamp by technique, then is passed through 10-100L halogen gas,
So that silicon reacts completely generates gaseous compound, then exhaust gas is discharged by vacuum plant, to keep chamber clean.
However, technical staff can not judge the indoor clean-up performance of chamber during heating, therefore usually using excessive
Halogen gas simultaneously guarantees that the method for sufficient heating time is completed, and above method can bring the serious waste of resource.For example, increasing
The flow of big halogen gas can make cleaning process waste a large amount of halogen gas, so that the utilization rate of halogen gas declines；And
Raising technological temperature, extension heating time can make quartzy softening, and plant capacity consumption increased dramatically.
Further, since processing chamber compact layout, and need to execute processing step, processing chamber in the limited space
The installation site of cleaning device is generally very limited.If cleaning device is arranged in the cavity, and can execute technique and clean
Mutually pollution is generated in the process, influences the yield of product, the normal operation of jamming equipment.
Utility model content
How the technical problem to be solved by the utility model is to efficiently accomplish technique by way of more low energy consumption
The cleaning of chamber, while reducing and being interfered with each other with technical process.
To solve the above-mentioned problems, the utility model provides a kind of semiconductor equipment, comprising: processing chamber；Electrode pair,
It is configured to the mechanism moved back and forth in processing chamber and outside processing chamber；Power supply, electrode to being electrically connected to a power source, when
When electrode is to being moved in processing chamber, the electrode of energization is to can ionize the indoor gas of process cavity.
Semiconductor equipment provided by the utility model is by its chamber internal electrode to the plasma of generation to processing chamber
Inner wall cleaned, reduce the energy consumption of cleaning equipment, while can effectively ensure that the cleaning to working cavity inner wall
Degree.In addition, electrode can be reduced to outside processing chamber to retractable structure is arranged to when executing technical process,
Prevent its interfering with each other with technical process.
In the more excellent technical solution of the utility model, it is provided with groove body on the inner wall of processing chamber, is accommodated in groove body
It can be arranged along at least one electrode in the sliding block of the direction sliding perpendicular to processing chamber inner wall plane, electrode pair in sliding block
Close to the side of processing chamber, sliding block is also connected with the driving device of its sliding of driving.The telescopic device of sliding block form can be helped
The sealing of processing chamber is helped, and easy to process.
Further, in the more excellent technical solution of the utility model, sliding block passes through rod-shaped far from processing chamber side
Part is connect with driving device, and the junction of rod-like element and sliding block is provided with sealing ring.When electrode enters processing chamber, sealing
Circle can be resisted against groove body edge；When electrode exits completely from processing chamber, sealing ring can be sandwiched in groove body bottom and
Between sliding block, while rod-like element is surrounded, improves the air-tightness of processing chamber.
Further, in the more excellent technical solution of the utility model, the electrode pair and the fixed company of the same sliding block
It connects.The electrode of ipsilateral setting reduces the spacing distance between electrode to that can simplify device.
In the more excellent technical solution of the utility model, the electrode is to first electrode and the second electricity including being oppositely arranged
Pole is located on the inner wall of the processing chamber opposite side.The electrode being oppositely arranged is opposite to the tip that can make two electrodes,
To improve the discharging efficiency of electrode pair；Simultaneously electrode to discharge position closer to processing chamber center, make to generate it is equal from
Daughter is more uniform in process cavity indoor distribution, can effectively be cleaned to each position of processing chamber.
In the more excellent technical solution of the utility model, the gas is nitrogen, helium, argon gas, fluorine gas, chlorine, fluorination
One or more of hydrogen, hydrogen chloride, hydrogen bromide.Preferably, the gas is fluorine gas, chlorine, hydrogen fluoride, hydrogen chloride or bromination
One or more of hydrogen.Use halogen gas can be with the silicon substrate powder efficient set on processing chamber surface for the halide of silicon
Gas, to effectively be removed by vacuum equipment.
In the more excellent technical solution of the utility model, the electrode is to using graphite electrode.Graphite has preferableization
Learn inertia, it is more difficult to be reacted, and high temperature resistant, conducted electricity very well with halogen gas, be to be suitable for technical solutions of the utility model
Good electrode material.
In the more excellent technical solution of the utility model, the cavity of the processing chamber is made using nonmetallic materials.It adopts
Processing chamber, such as ceramic material is made with nonmetallic materials, cavity is difficult to as electrode, and therefore, the utility model is implemented
Independent electrode pair is used in example, and gas is ionized inside processing chamber, is solved by simple device nonmetallic
Processing chamber can not be used as the problem of electrode.
In the more excellent technical solution of the utility model, the semiconductor equipment further includes feedback control circuit, including string
The galvanometer being associated in the circuit that the electrode pair is connected to the power supply, the feedback control circuit can be according to the electric currents
The size of current for counting measurement, controls the output power of the power supply.
In the more excellent technical solution of the utility model, the semiconductor equipment is chemical vapor depsotition equipment, physics gas
Phase depositing device or dry etching equipment.Preferably, the semiconductor equipment be vapour phase epitaxy equipment, ion beam etching equipment,
Reactive ion etching equipment.
Detailed description of the invention
Fig. 1 is the cleaning device structural representation of the processing chamber of vapour phase epitaxy equipment in the utility model one embodiment
Figure；
Fig. 2 is the retractable electrode structural schematic diagram of cleaning device in Fig. 1 embodiment；
Fig. 3 is the cleaning device structural representation of the processing chamber of reactive ion etching in another embodiment of the utility model
Figure.
Detailed description of the invention: processing chamber 100, cavity 100 ' carry the station 102 of wafer, air inlet 104, gas outlet 106,
Vacuum equipment 108, plasma 110, electrode is to 112 (first electrode 112a, second electrode 112b), AC power source 114, groove body
116, drive rod 118, sealing ring 120, sliding block 122, hollow portion 124.
Specific embodiment
Preferred embodiments of the present invention are described with reference to the accompanying drawings.It should be understood by those skilled in the art that
It is that these embodiments are used only for explaining the technical principle of the utility model, it is not intended that limit the protection of the utility model
Range.Those skilled in the art, which can according to need, adjusts it, to adapt to specific application.
It should be noted that in the description of the preferred embodiment of the utility model, term " on ", "lower", " left side ",
The direction of the instructions such as " right side ", "front", "rear", "vertical", "horizontal", "inner", "outside" or the term of positional relationship are based on attached drawing
Shown in direction or positional relationship, this is intended merely to facilitate description, rather than indication or suggestion described device or component part
It must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
Embodiment one
Present embodiments provide a kind of vapour phase epitaxy equipment 1, with reference to Fig. 1, the processing chamber 100 of the vapour phase epitaxy equipment by
Cavity 100 ' limits, and the station 102 of carrying wafer is provided in processing chamber 100.100 side of processing chamber be provided with into
Port 104 leads to for being passed through reaction gas, protective gas when executing process for vapor phase epitaxy, while when executing cleaning procedure
Enter clean gas；100 other side of processing chamber is provided with gas outlet 106, is connected to vacuum equipment 108, and vacuum equipment 108 can
100 air pressure inside of processing chamber is maintained to stablize when executing vapour phase epitaxy program, while when executing cleaning procedure, by process cavity
It is exported in room 100 by the exhaust gas that pollutant reaction in clean gas and chamber generates.
In the prior art, vapour phase epitaxy equipment is in order to clear up the remaining pollutant of its inner wall, usually in cavity
100 ' peripheral region arrange infrared lamp, heat to cavity 100 '.However, as described in the background art, this side
Formula will cause the huge waste of resource.In the present embodiment, using electrode discharge, gas ionization is made to generate the side of plasma 110
Formula clears up the 100 ' inner wall of cavity of processing chamber 100.Specifically, which is configured with and protrudes into process cavity
The electrode of room 100 is to 112, including the first electrode 112a and second electrode 112b being oppositely arranged, first electrode 112a, the second electricity
Pole 112b is electrically connected with AC power source 114.The voltage range of AC power source 114 can be 0.1-10kV；First electrode 112a with
The distance between second electrode 112b can be 1-20cm.
In the present embodiment, electrode is all made of electrode (first electrode 112a and second electrode 112b) used by 112 can
Stretching structure.Referring to fig. 2, the electrode structure of the present embodiment is described by taking the telescoping mechanism of first electrode 112a as an example, the
The telescoping mechanism of one electrode 112a is arranged at the 100 ' inner wall of cavity of processing chamber 100.
Specifically, the side of the 100 ' inner wall of cavity of processing chamber 100 is provided with groove body of the opening towards processing chamber 100
116.Be equipped in groove body 116 can in groove body 116 along favour or the cavity 100 ' basically perpendicular to processing chamber 100 in
The sliding block 122 of the direction sliding of wall plane, sliding block 122, which is able to drive, to be connected to the first electrode 112a on 122 top of sliding block and passes through
The mode of sliding enters or leaves processing chamber 100.Device for driving sliding block 122 to slide in groove body 116 includes and cunning
The drive rod 118 and the driving device (not shown) connecting with drive rod 118 that block 122 is mechanically connected, driving device are logical
Bar 118 of overdriving by the push-in of sliding block 122 (or part be pushed into) or pulls out processing chamber 100, so drive first electrode 112a into
Enter or leave processing chamber 100.
In order to guarantee being electrically connected between AC power source 114 and first electrode 112a, while preventing wiring between the two dry
Disturb the normal sliding of sliding block 122, in the present embodiment, 122 bottom of sliding block (left part in figure) with drive rod 118 is whole has
Hollow portion 124, hollow portion 124 are disposed with the power supply line connecting with first electrode 112a, and the setting of the hollow portion 124 can be
In the case where guaranteeing device air-tightness, it is ensured that the normal sliding of sliding block 122 not will receive the interference of power supply line.
In order to ensure the air-tightness of the processing chamber 100 in sliding process of sliding block 122, selected between sliding block 122 and groove body 116
Select the sliding matching mode using solid lubrication.In addition, the connecting portion of drive rod 118 and sliding block 122 is additionally provided with sealing ring
120, sealing ring 120 using rubber material be made, inner ring surround drive rod 118 be arranged, outer ring against groove body 116 inner wall, with
Further increase the sealing performance of device.Specifically, when sliding block 122 moves to 116 bottom of groove body, i.e., groove body 116 is most left in figure
When side position, sealing ring 120 can be resisted against at the spacing bayonet of 116 bottom of groove body, technique when guaranteeing process for vapor phase epitaxy
The air-tightness of chamber 100；Simultaneously as 120 periphery of sealing ring is arranged against the inner wall of groove body 116, the inner wall of groove body 116 will be right
The periphery of sealing ring 120 applies stress of the direction towards sealing circle center, which will guarantee the inner ring of sealing ring 120 simultaneously
With the close-fitting between drive rod 118, the air-tightness of processing chamber 100 is further ensured.
When executing cleaning procedure, sliding block 122 drives first electrode 112a to slide into processing chamber 100, correspondingly, the other side
Second electrode 112b also synchronize slide into processing chamber 100, make between first electrode 112a and second electrode 112b away from
From being gradually reduced, until moving to predeterminated position (in the present embodiment, moves to the electrode of predeterminated position to the distance between 112
For the minimum range that can reach between the two)；It is passed through argon gas along air inlet 104 simultaneously, while starting the control of vacuum equipment 108
Air pressure size in processing chamber 100 is at OK range (preferably 50-500mTorr, further preferably 100mTorr)；It connects
, it opens AC power source 114 and is powered to electrode to 112, cause electrode to the glow discharge between 112, and then to argon gas
It is ionized, forms plasma；It is passed through a certain amount of halogen simple substance or hydrogen halide, the halogen simple substance or halogen again later
Changing hydrogen can be one or more of nitrogen, helium, argon gas, fluorine gas, chlorine, hydrogen fluoride, hydrogen chloride, hydrogen bromide, this
It is hydrogen chloride gas in embodiment.The plasma bombardment hydrogen chloride gas formed after argon gas ionization, its energy and charge are passed
Hydrogen chloride gas is passed, being allowed to ionization is H+And Cl-, H+And Cl-It is reacted again with silica-base material, generates gaseous state silicide；It is raw
At gaseous state silicide constantly detach processing chamber 100 via vacuum equipment 108, and then guarantee the clean of 100 inner wall of processing chamber
Only.
Pollution of the process for vapor phase epitaxy to electrode to 112 surfaces in order to prevent needs to guarantee executing process for vapor phase epitaxy
When, electrode is able to maintain to 112 to a certain extent far from processing chamber 100, and is reduced as far as itself and processing chamber 100
Contact area.In order to achieve the goal above, when executing process for vapor phase epitaxy, sliding block 122 will be filled by driving in the present embodiment
It sets, the driving of drive rod 118, moves to the bottom of groove body 116, since the length that the total length of groove body 116 is greater than sliding block 122 adds
The length of first electrode 112a or second electrode 112b, the first electrode 112a or second electrode 112b on 122 top of sliding block are complete
It is full reduced enter groove body 116 in, prevent its directly it is exposed inside processing chamber 100, pollute.In other realities of the utility model
It applies in example, in order to be further reduced pollution of the process treatment process for electrode to 112, can also add in the notch of groove body 116
If can automatic open-close protective cover.
In the present embodiment, electrode to 112 material selection graphite material.Graphite material has preferable chemical inertness, no
Reacted with halogen simple substance or hydrogen halide, and it is heat-resisting, electric conductivity is preferable.In addition, in the present embodiment, processing chamber
100 100 ' material of cavity is ceramics, and ceramics are dielectric material, good insulation preformance, it is difficult to as individual electrode.Therefore, originally
The ionization for executing gas to 112 using independent telescopic electrode in embodiment.
It is in series with galvanometer also in other embodiments of the utility model, on the output circuit of power supply to monitor power supply
Output electric current, in order to control the output power of power supply to adjust the etch rate to pollutant, galvanometer also with feedback control
Circuit coupling, feedback control circuit can control the output power of power supply according to the size of current of amperometric measurement, be carved with adjusting
Lose speed.
Embodiment two
A kind of reactive ion etching equipment 3 is present embodiments provided, with reference to Fig. 3, reactive ion provided in this embodiment is carved
Some approximate but also different froms of the cleaning device of the vapour phase epitaxy equipment 1 provided in erosion equipment 3 and embodiment one, in place of distinguishing
Be: the electrode of the cleaning device of the reactive ion etching equipment 3 in the present embodiment is set to the same of processing chamber 100 to 112
Side, specifically, first electrode 112a and second electrode 112b are fixed on same sliding block 122, and electrode follows sliding block 122 to 112
Synchronously enter or leave processing chamber 100.The set-up mode can simplify driving device, reduce the interval distance between electrode
From.
It should be noted that, although the utility model by taking vapour phase epitaxy equipment and reactive ion etching equipment as an example, is introduced
The cleaning mechanism of semiconductor equipment provided by the utility model, but can also to be used in other various types of for the cleaning mechanism
In semiconductor equipment, including but not limited to following type: aumospheric pressure cvd equipment, low-pressure chemical vapor deposition are set
Standby, plasma reinforced chemical vapour deposition equipment, equipment of metal organic chemical vapor deposition, fluid chemistry vapor deposition apparatus,
Vacuum evaporation equipment, magnetron sputtering apparatus, plasma coating equipment, ion plating equipment, molecular beam epitaxy set, atomic layer deposition
Product equipment, electrochemical plating film device, automatic double surface gluer, lithographic equipment, developing apparatus, ion etching equipment, reactive ion etching are set
Standby, intensified response ion etching equipment, reactive ion beam etching (RIBE) equipment, ion beam etching equipment, chemical-mechanical grinding device, from
Sub- injection device etc..
So far, it has been combined attached drawing and describes the technical solution of the utility model, still, those skilled in the art are easy reason
Solution, the protection scope of the utility model are expressly not limited to these specific embodiments.Without departing from the utility model
Under the premise of principle, those skilled in the art can make equivalent change or replacement to the relevant technologies feature, these change or
Technical solution after replacement is fallen within the protection scope of the utility model.
Claims (10)
1. a kind of semiconductor equipment characterized by comprising
Processing chamber；
Electrode pair is mounted on movable device, is able to enter and leaves the processing chamber；
Power supply, the electrode pair and the power electric connection, into the electrode pair of the indoor energized state of the process cavity
The indoor gas of the process cavity can be ionized.
2. semiconductor equipment as described in claim 1, which is characterized in that the cavity inner wall of the processing chamber is provided with opening
Towards the groove body of the processing chamber, accommodating in the groove body can be on the direction for entering and leaving the processing chamber
The sliding block is arranged in close to the side of the processing chamber in the sliding block for returning sliding, at least one electrode in the electrode pair,
The sliding block is also connected with the driving device of its sliding of driving.
3. semiconductor equipment as claimed in claim 2, which is characterized in that the sliding block passes through far from the processing chamber side
Rod-like element connect with the driving device, the junction of the rod-like element and the sliding block is provided with sealing ring.
4. semiconductor equipment as claimed in claim 2, which is characterized in that the electrode pair and the fixed company of the same sliding block
It connects.
5. semiconductor equipment as claimed in claim 1 or 2, which is characterized in that the electrode is to first including being oppositely arranged
Electrode and second electrode are located on the inner wall of the processing chamber two sides.
6. semiconductor equipment as described in claim 1, which is characterized in that the gas is nitrogen, helium, argon gas, fluorine gas, chlorine
One or more of gas, hydrogen fluoride, hydrogen chloride, hydrogen bromide.
7. semiconductor equipment as described in claim 1 or 6, which is characterized in that the electrode is to using graphite electrode.
8. semiconductor equipment as described in claim 1, which is characterized in that the cavity of the processing chamber uses nonmetallic materials
It is made.
9. semiconductor equipment as described in claim 1, which is characterized in that further include feedback control circuit, including be connected on institute
Electrode pair and the galvanometer in the power supply connection circuit are stated, the feedback control circuit can be according to the amperometric measurement
Size of current controls the output power of the power supply.
10. the semiconductor equipment as described in any one of claim 1-4,6,8,9, which is characterized in that the semiconductor equipment
For chemical vapor depsotition equipment, Pvd equipment or dry etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920026431.3U CN209119040U (en) | 2019-01-07 | 2019-01-07 | Semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920026431.3U CN209119040U (en) | 2019-01-07 | 2019-01-07 | Semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209119040U true CN209119040U (en) | 2019-07-16 |
Family
ID=67209173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920026431.3U Expired - Fee Related CN209119040U (en) | 2019-01-07 | 2019-01-07 | Semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209119040U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820619A (en) * | 2021-03-06 | 2021-05-18 | 东莞市峰谷纳米科技有限公司 | Plasma surface cleaning device |
| CN112808707A (en) * | 2021-03-06 | 2021-05-18 | 东莞市峰谷纳米科技有限公司 | Surface cleaning device |
-
2019
- 2019-01-07 CN CN201920026431.3U patent/CN209119040U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820619A (en) * | 2021-03-06 | 2021-05-18 | 东莞市峰谷纳米科技有限公司 | Plasma surface cleaning device |
| CN112808707A (en) * | 2021-03-06 | 2021-05-18 | 东莞市峰谷纳米科技有限公司 | Surface cleaning device |
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