CN107799413A - Lithographic method, etching device and semiconductor crystal wafer dividing method - Google Patents
Lithographic method, etching device and semiconductor crystal wafer dividing method Download PDFInfo
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- CN107799413A CN107799413A CN201610778104.4A CN201610778104A CN107799413A CN 107799413 A CN107799413 A CN 107799413A CN 201610778104 A CN201610778104 A CN 201610778104A CN 107799413 A CN107799413 A CN 107799413A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Abstract
The present invention provides a kind of lithographic method, etching device and semiconductor crystal wafer dividing method.One of which semiconductor crystal wafer dividing method comprises the following steps：Semiconductor wafer is provided, formed with multiple integrated circuits on the semiconductor crystal wafer, gap is provided between the multiple integrated circuit；The gap between the multiple integrated circuit is performed etching using launching laser using nozzle and spraying plasma etching gas, the multiple integrated circuit is separated one by one.The present invention is proposed using launching laser using nozzle and spraying the method and device that plasma etching gas performs etching, so as to be realized the segmentation of semiconductor crystal wafer using this method and device.The semiconductor crystal wafer dividing method of the present invention is avoided using stress caused by traditional cutter scribing, and caused by effectively reducing scribing the problems such as chipping, fragment, the scribing suitable for thin wafer is split, and method is simply, quickly, efficiently.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of lithographic method, etching device and semiconductor crystal wafer
Dividing method.
Background technology
On a piece of semiconductor crystal wafer, generally making has hundreds of extremely thousands of naked cores (Die), is left between these naked cores
Certain interval separates them, it is necessary to carry out scribing cutting (Dicing Saw).However, traditional scribing cutting is easy to
Produce stress edge is burst apart, so as to cause the fragmentation of bare chip, especially for formed on thin wafer device, such as power device
Part and BSI type cmos image sensors etc., the wafer thickness of this device are generally as thin as 50 μm, are very easy in scribing cutting
Fragmentation.
Some solutions employ graphical photoresistance and combine conventional dry etching progress scribing at present.It is in addition, open
Number disclose a kind of dividing method of semiconductor crystal wafer for JP2003257896A patent document, this method is using grinding adhesive tape
The scribing of wafer is realized with dry etch process.By the way that in wafer top surface Continuous pressing device for stereo-pattern, then dicing tape exposes road plan region,
Wafer is split using dry etching under the protection of adhesive tape again.Publication No. US20110312157A1 patent document is also public
A kind of cutting method of semiconductor crystal wafer is opened, this method realizes Wafer Dicing using femtosecond laser and plasma etching.It is logical
Cross and form mask in crystal column surface, then expose road plan using femtosecond laser cutting mask, recycle plasma etching covering
Wafer is split under the protection of film.
However, above-mentioned solution processing step is all complex, production efficiency is relatively low.Therefore, it is necessary to seek in fact
Seek a kind of highly efficient, easy dicing technique for thin wafer.
The content of the invention
Prior art in view of the above, lead it is an object of the invention to provide a kind of lithographic method, etching device and partly
Body wafer dividing method, for solving the problems, such as that easy fragment is cut in the scribing of thin wafer in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of lithographic method, comprises the following steps：
Launch laser using nozzle and spray the region that plasma etching gas etches to target material needs and carve
Erosion.
Preferably, the plasma etching gas is the dry etching gas of the target material.
Preferably, the plasma etching gas is by the laser active.
Preferably, the laser is ultraviolet femtosecond laser.
It is further preferred that the pulse width of the ultraviolet femtosecond laser is 10-500 femtoseconds, wavelength 1570-200nm,
Pulse recurrence frequency is 200kHz-10MHz, and pulse energy is 0.5-100 μ J, a diameter of 3-15 μm of focus.
In order to achieve the above objects and other related objects, the present invention also provides a kind of etching device, including：Air cavity, air inlet
Mouth, nozzle and laser emission element；
The air cavity includes the side at top, the bottom relative with the top and the connection top and the bottom
Wall；
The air inlet is located at the side wall of the air cavity；
The nozzle is located at the bottom of the air cavity；
The laser emission element is located at the top of the air cavity, transmitting laser by the gas activation in the air cavity for etc.
Gas ions state, and make the laser of transmitting by being projected after the air cavity from the nozzle.
Preferably, the laser emission element is ultraviolet femtosecond laser emitter.
Preferably, the nozzle diameter is 10-80 μm.
In order to achieve the above objects and other related objects, the present invention also provides a kind of semiconductor crystal wafer dividing method, including
Following steps：
Semiconductor wafer is provided, formed with multiple integrated circuits, the multiple integrated circuit on the semiconductor crystal wafer
Between be provided with gap；
Launch laser and spray plasma etching gas to enter the gap between the multiple integrated circuit using nozzle
Row etching, makes the multiple integrated circuit separate one by one.
Preferably, the semiconductor crystal wafer is Silicon Wafer, and the plasma etching gas is the dry etching gas of silicon.
It is further preferred that the dry etching gas of the silicon includes etching reaction gas ClF3、Cl2, one kind in HCl
Or it is a variety of, and carry gas He, Ar, N2In one or more.
Preferably, the laser is ultraviolet femtosecond laser.
It is further preferred that the pulse width of the ultraviolet femtosecond laser is 10-500 femtoseconds, wavelength 1570-200nm,
Pulse recurrence frequency is 200kHz-10MHz, and pulse energy is 0.5-100 μ J, a diameter of 3-15 μm of focus.
It is further preferred that the pulse width of the ultraviolet femtosecond laser is 100-400 femtoseconds, wavelength 540-200nm,
Pulse recurrence frequency is 500kHHz-5MHz, and pulse energy is 1-5 μ J, a diameter of 5-10 μm of focus.
In order to achieve the above objects and other related objects, the present invention also provides a kind of semiconductor crystal wafer dividing method, including
Following steps：
Semiconductor wafer is provided, formed with multiple integrated circuits, the multiple integrated circuit on the semiconductor crystal wafer
Between be provided with gap；
Mask layer is formed on the semiconductor crystal wafer, the mask layer covers and protects the integrated circuit；
Launch laser using nozzle and spray the plasma etching gas graphically mask layer, described partly led with exposing
Gap on body wafer between multiple integrated circuits；
The semiconductor crystal wafer is split by the gap exposed.
Preferably, the mask layer is silicon oxide layer, and the plasma etching gas of the graphical mask layer is oxidation
The dry etching gas of silicon.
It is further preferred that the dry etching gas of the silica includes etching reaction gas HF or H2O, and carry
Gas He, Ar, N2In one or more.
Preferably, the laser is ultraviolet femtosecond laser.
It is further preferred that the pulse width of the ultraviolet femtosecond laser is 10-500 femtoseconds, wavelength 1570-200nm,
Pulse recurrence frequency is 200kHz-10MHz, and pulse energy is 0.5-100 μ J, a diameter of 3-15 μm of focus.
It is further preferred that the pulse width of the ultraviolet femtosecond laser is 100-400 femtoseconds, wavelength 540-200nm,
Pulse recurrence frequency is 500kHHz-5MHz, and pulse energy is 1-5 μ J, a diameter of 5-10 μm of focus.
Preferably, the semiconductor crystal wafer is split by the gap exposed, is after the graphical mask layer
The semiconductor crystal wafer is placed in the gap exposed in dry etching equipment to the mask layer and carries out dry etching, is made described more
Individual integrated circuit separates one by one.
Preferably, the semiconductor crystal wafer is split by the gap exposed, is after the graphical mask layer
Launch laser using nozzle and spray the gap that plasma etching gas exposes to the mask layer and perform etching, make described more
Individual integrated circuit separates one by one.
As described above, lithographic method, etching device and the semiconductor crystal wafer dividing method of the present invention, have below beneficial to effect
Fruit：
The present invention proposes using nozzle transmitting laser and sprays method and the dress that plasma etching gas performs etching
Put, so as to realize the segmentation of semiconductor crystal wafer using this method and device.The semiconductor crystal wafer dividing method of the present invention avoids
Using stress caused by traditional cutter scribing, caused by effectively reducing scribing the problems such as chipping, fragment, suitable for thin crystalline substance
Round scribing segmentation, wherein, on the one hand the laser of transmitting can activate plasma etching gas, on the other hand can accelerate to carve
Efficiency is lost, relative to prior art, the inventive method is simpler, quickly and efficiently.In addition, present invention also offers utilize spray
Mouth transmitting laser simultaneously sprays plasma etching gas Patterned masking layer, then under mask layer protection scribing technical scheme,
Thin wafer can be effectively protected, improves production yield.
Brief description of the drawings
Fig. 1 is shown as the schematic diagram of the etching device of the offer of the embodiment of the present invention one.
Fig. 2 is shown as the schematic diagram of the semiconductor crystal wafer dividing method of the offer of the embodiment of the present invention two.
Fig. 3 is shown as the embodiment of the present invention two and launches laser using nozzle and spray plasma etching gas and partly led
The schematic diagram of body wafer segmentation.
Fig. 4 is shown as the schematic diagram of the semiconductor crystal wafer dividing method of the offer of the embodiment of the present invention three.
Component label instructions
S101~S102 steps
S201~S204 steps
101 air cavitys
102 air inlets
103 nozzles
104 laser emission elements
1 etching device
2 semiconductor crystal wafers
3 adhesive tapes
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.It should be noted that in the case where not conflicting, following examples and implementation
Feature in example can be mutually combined.
It should be noted that the diagram provided in following examples only illustrates the basic structure of the present invention in a schematic way
Think, only show the component relevant with the present invention in schema then rather than according to component count, shape and the size during actual implement
Draw, kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its assembly layout kenel
It is likely more complexity.
Technical scheme is described in detail below by specific example.
Embodiment one
The present embodiment provides a kind of lithographic method, comprises the following steps：Launch laser using nozzle and spray plasma
The region that etching gas need to etch to target material performs etching.
Specifically, the plasma etching gas is the dry etching gas of the target material.The plasma
Etching gas are by the laser active.The laser is ultraviolet femtosecond laser.
The pulse width of the ultraviolet femtosecond laser can be 10-500 femtoseconds, and wavelength can be 1570-200nm, pulse
Repetition rate can be 200kHz-10MHz, and pulse energy can be 0.5-100 μ J., can when launching the ultraviolet femtosecond laser
The region surface that Laser Focusing is etched to needs, the focus diameter of laser can be 3-15 μm.Specific ultraviolet femtosecond laser
Parameter can be adjusted according to the needs of different etching gas and etching effect.
This lithographic method is under the collective effect of laser and plasma etching gas, it is possible to achieve efficient quick quarter
Erosion and cutting, the lines path etched as needed or pattern moving nozzle, it is possible to achieve the quick quarter of simple lines or pattern
Erosion.
In order to realize above-mentioned lithographic method, the present embodiment also provides a kind of etching device with nozzle.Referring to Fig. 1,
The etching device, including：Air cavity 101, air inlet 102, nozzle 103 and laser emission element 104；The air cavity 101 includes top
The side wall in portion, the bottom relative with the top and the connection top and the bottom；The air inlet 102 is located at institute
State the side wall of air cavity 101；The nozzle 103 is located at the bottom of the air cavity 101；The laser emission element 104 is positioned at described
The top of air cavity 101, the gas activation in the air cavity 101 is plasmoid by transmitting laser, and makes the laser of transmitting
By being projected after the air cavity 101 from the nozzle 103.
As the preferred scheme of the present embodiment, the laser emission element 104 is ultraviolet femtosecond laser emitter.Transmitting
The parameters such as the wavelength of laser, power, pulse energy can be adjusted by the laser emission element.The nozzle diameter can
Think 10-80 μm, the design of nozzle diameter size need to enable laser by, while sharp nozzle can etch it is thinner
Lines.
When the etching device works, the air inlet 102 positioned at the side wall of air cavity 101 is passed through gas to the air cavity 101,
Laser emission element 104 positioned at the top of air cavity 101 launches the laser of required parameter, and the laser of transmitting passes through air cavity 101
It is plasmoid by the gas activation in the air cavity 101, is then projected via nozzle 103；It is activated in air cavity 101
Plasma etching gas also sprays from nozzle 103.
When performing etching, corrosion material to be etched can be placed on the operating desk with vacuum or electrostatic chuck.
Embodiment two
Referring to Fig. 2, the present embodiment provides a kind of semiconductor crystal wafer dividing method, comprise the following steps：
S101 provides semiconductor wafer, the multiple integrated formed with multiple integrated circuits on the semiconductor crystal wafer
Gap is provided between circuit；
S102 is using nozzle transmitting laser and sprays plasma etching gas between the multiple integrated circuit
Gap performs etching, and the multiple integrated circuit is separated one by one.
In the present embodiment, the semiconductor crystal wafer is Silicon Wafer, and the plasma etching gas is the dry etching of silicon
Gas, the i.e. gas used when carrying out dry etching silicon materials.The present embodiment preferably, the dry etching gas bag of the silicon
Include etching reaction gas ClF3、Cl2, one or more in HCl, and carry gas He, Ar, N2In one or more.
As the preferred scheme of the present embodiment, in step S102, the laser is ultraviolet femtosecond laser.The ultraviolet femtosecond
The pulse width of laser can be 10-500 femtoseconds, preferably 100-400 femtoseconds, and wavelength can be 1570-200nm, be preferably
540-200nm, pulse recurrence frequency can be 200kHz-10MHz, preferably 500kHHz-5MHz, and pulse energy can be
0.5-100 μ J, preferably 1-5 μ J., can be by Laser Focusing to the region table for needing etch when launching the ultraviolet femtosecond laser
Face, the focus diameter of laser can be 3-15 μm, preferably 5-10 μm.
As the preferred scheme of the present embodiment, in step S102, the bore of the nozzle utilized can be 10-80 μm, with shape
Into thinner segmentation lines.
As shown in figure 3, during concrete operations can on semiconductor crystal wafer 2 Continuous pressing device for stereo-pattern 3, to fix semiconductor crystal wafer 2
Position, avoid the occurrence of the situations such as the single-wafer displacement after segmentation.Band can be placed on by having pasted the semiconductor crystal wafer 2 of adhesive tape 3
On the operating desk for having vacuum or electrostatic chuck, performed etching using the etching device 1 with nozzle, and cutting road as needed
Etching device 1 is moved in footpath, such as the road plan being provided with along semiconductor crystal wafer 2 moves, so as to realize the scribing of wafer.Using this
When embodiment method splits wafer, the speed of cutting speed, i.e. moving nozzle can be 500mm/sec-5m/sec, be preferably
600mm/sec to 2m/sec。
Embodiment three
Referring to Fig. 4, the present embodiment provides a kind of semiconductor crystal wafer dividing method protected using mask layer, including it is as follows
Step：
S201 provides semiconductor wafer, the multiple integrated formed with multiple integrated circuits on the semiconductor crystal wafer
Gap is provided between circuit；
S202 forms mask layer on the semiconductor crystal wafer, and the mask layer covers and protects the integrated circuit；
S203 is using nozzle transmitting laser and sprays the plasma etching gas graphically mask layer, described to expose
Gap on semiconductor crystal wafer between multiple integrated circuits；
S204 is split by the gap exposed to the semiconductor crystal wafer.
In step S203, the graphical mask layer is mainly the drawing according to the semiconductor crystal wafer on the mask layer
Road position etches lines, so as to expose the road plan on the semiconductor crystal wafer, i.e., between described multiple integrated circuits
Gap.In the present embodiment, the mask layer is silicon oxide layer, and the plasma etching gas of the graphical mask layer is oxidation
The dry etching gas of silicon.Wherein, the dry etching gas of silica refers to used when carrying out dry etching silica material
Gas.Preferably, the dry etching gas of the silica includes etching reaction gas HF or H to the present embodiment2O, and take
Band gas He, Ar, N2In one or more.
As the preferred scheme of the present embodiment, in step S203, the laser is ultraviolet femtosecond laser.The ultraviolet femtosecond
The pulse width of laser can be 10-500 femtoseconds, preferably 100-400 femtoseconds, and wavelength can be 1570-200nm, be preferably
540-200nm, pulse recurrence frequency can be 200kHz-10MHz, preferably 500kHHz-5MHz, and pulse energy can be
0.5-100 μ J, preferably 1-5 μ J., can be by Laser Focusing to the region table for needing etch when launching the ultraviolet femtosecond laser
Face, the focus diameter of laser can be 3-15 μm, preferably 5-10 μm.
Step S204 is split by the gap exposed to the semiconductor crystal wafer, can use conventional dry etching
Technique, for example, the semiconductor crystal wafer is placed in dry etching equipment to the mask layer after the graphical mask layer
The gap exposed carries out dry etching, so that the multiple integrated circuit separates one by one.Specifically dry etching parameter is this
Known by art personnel, therefore not to repeat here.
As the preferred scheme of the present embodiment, step S204 is divided the semiconductor crystal wafer by the gap exposed
Cut, the lithographic method of the present invention can also be used to carry out, it is for instance possible to use the semiconductor crystal wafer segmentation described in embodiment two
Method.Specifically, launch laser using nozzle after the graphical mask layer and spray plasma etching gas to described
The gap that mask layer exposes performs etching, and the multiple integrated circuit is separated one by one.The laser utilized is preferably ultraviolet femtosecond
Laser, the pulse width of the ultraviolet femtosecond laser can be 10-500 femtoseconds, preferably 100-400 femtoseconds, and wavelength can be
1570-200nm, preferably 540-200nm, pulse recurrence frequency can be 200kHz-10MHz, preferably 500kHHz-5MHz,
Pulse energy can be 0.5-100 μ J, preferably 1-5 μ J., can be by Laser Focusing to needs when launching the ultraviolet femtosecond laser
The region surface of etching, the focus diameter of laser can be 3-15 μm, preferably 5-10 μm.
During specific etching, the etching device described in embodiment one can be utilized, passes first into the dry etching gas of silica
Body, adjusts laser parameter and carries out the graphical of mask layer, then stops being passed through the dry etching gas of silica, is changed to be passed through
The dry etching gas of silicon, laser parameter, then the etching semiconductor wafer under the protection of mask layer are adjusted, realize drawing for wafer
Piece is split.In order to save the time, two etching devices can also be used, are respectively used to carry out the graphical and semiconductor of mask layer
The scribing segmentation of wafer.
In summary, the present invention, which proposes, launches laser using nozzle and sprays what plasma etching gas performed etching
Method and device, so as to realize the segmentation of semiconductor crystal wafer using this method and device.The semiconductor crystal wafer segmentation of the present invention
Method is avoided using stress caused by traditional cutter scribing, caused by effectively reducing scribing the problems such as chipping, fragment, is fitted
Scribing for thin wafer is split, wherein, on the one hand the laser of transmitting can activate plasma etching gas, on the other hand may be used
To accelerate to etch efficiency, relative to prior art, the inventive method is simpler, quickly and efficiently.In addition, the present invention also provides
Launch laser using nozzle and spray plasma etching gas Patterned masking layer, then under mask layer protection scribing skill
Art scheme, thin wafer can be effectively protected, improve production yield.So the present invention effectively overcomes kind of the prior art
Plant shortcoming and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (22)
1. a kind of lithographic method, it is characterised in that comprise the following steps：
Launch laser using nozzle and spray the region that plasma etching gas etches to target material needs and perform etching.
2. lithographic method according to claim 1, it is characterised in that：The plasma etching gas is the target material
The dry etching gas of material.
3. lithographic method according to claim 1, it is characterised in that：The plasma etching gas is swashed by the laser
It is living.
4. lithographic method according to claim 1, it is characterised in that：The laser is ultraviolet femtosecond laser.
5. lithographic method according to claim 4, it is characterised in that：The pulse width of the ultraviolet femtosecond laser is 10-
500 femtoseconds, wavelength 1570-200nm, pulse recurrence frequency 200kHz-10MHz, pulse energy are 0.5-100 μ J, focus
A diameter of 3-15 μm.
A kind of 6. etching device, it is characterised in that including：Air cavity, air inlet, nozzle and laser emission element；
The air cavity includes the side wall at top, the bottom relative with the top and the connection top and the bottom；
The air inlet is located at the side wall of the air cavity；
The nozzle is located at the bottom of the air cavity；
The laser emission element is located at the top of the air cavity, and the gas activation in the air cavity is plasma by transmitting laser
Body state, and make the laser of transmitting by being projected after the air cavity from the nozzle.
7. etching device according to claim 6, it is characterised in that：The laser emission element is sent out for ultraviolet femtosecond laser
Injection device.
8. etching device according to claim 6, it is characterised in that：The nozzle diameter is 10-80 μm.
9. a kind of semiconductor crystal wafer dividing method, it is characterised in that comprise the following steps：
Semiconductor wafer is provided, formed with multiple integrated circuits on the semiconductor crystal wafer, between the multiple integrated circuit
Provided with gap；
Launch laser using nozzle and spray plasma etching gas and the gap between the multiple integrated circuit is carved
Erosion, makes the multiple integrated circuit separate one by one.
10. semiconductor crystal wafer dividing method according to claim 9, it is characterised in that：The semiconductor crystal wafer is silicon wafer
Circle, the plasma etching gas are the dry etching gas of silicon.
11. semiconductor crystal wafer dividing method according to claim 10, it is characterised in that：The dry etching gas of the silicon
Including etching reaction gas ClF3、Cl2, one or more in HCl, and carry gas He, Ar, N2In one or more.
12. semiconductor crystal wafer dividing method according to claim 9, it is characterised in that：The laser is that ultraviolet femtosecond swashs
Light.
13. semiconductor crystal wafer dividing method according to claim 12, it is characterised in that：The arteries and veins of the ultraviolet femtosecond laser
It is 10-500 femtoseconds to rush width, wavelength 1570-200nm, pulse recurrence frequency 200kHz-10MHz, pulse energy 0.5-
100 μ J, a diameter of 3-15 μm of focus.
14. semiconductor crystal wafer dividing method according to claim 12, it is characterised in that：The arteries and veins of the ultraviolet femtosecond laser
It is 100-400 femtoseconds to rush width, and wavelength 540-200nm, pulse recurrence frequency 500kHHz-5MHz, pulse energy is 1-5 μ
J, a diameter of 5-10 μm of focus.
15. a kind of semiconductor crystal wafer dividing method, it is characterised in that comprise the following steps：
Semiconductor wafer is provided, formed with multiple integrated circuits on the semiconductor crystal wafer, between the multiple integrated circuit
Provided with gap；
Mask layer is formed on the semiconductor crystal wafer, the mask layer covers and protects the integrated circuit；
Launch laser using nozzle and spray the plasma etching gas graphically mask layer, to expose the semiconductor die
Gap on circle between multiple integrated circuits；
The semiconductor crystal wafer is split by the gap exposed.
16. semiconductor crystal wafer dividing method according to claim 15, it is characterised in that：The mask layer is silica
Layer, the plasma etching gas of the graphical mask layer is the dry etching gas of silica.
17. semiconductor crystal wafer dividing method according to claim 16, it is characterised in that：The dry etching of the silica
Gas includes etching reaction gas HF or H2O, and carry gas He, Ar, N2In one or more.
18. semiconductor crystal wafer dividing method according to claim 15, it is characterised in that：The laser is that ultraviolet femtosecond swashs
Light.
19. semiconductor crystal wafer dividing method according to claim 18, it is characterised in that：The arteries and veins of the ultraviolet femtosecond laser
It is 10-500 femtoseconds to rush width, wavelength 1570-200nm, pulse recurrence frequency 200kHz-10MHz, pulse energy 0.5-
100 μ J, a diameter of 3-15 μm of focus.
20. semiconductor crystal wafer dividing method according to claim 18, it is characterised in that：The arteries and veins of the ultraviolet femtosecond laser
It is 100-400 femtoseconds to rush width, and wavelength 540-200nm, pulse recurrence frequency 500kHHz-5MHz, pulse energy is 1-5 μ
J, a diameter of 5-10 μm of focus.
21. semiconductor crystal wafer dividing method according to claim 15, it is characterised in that：By the gap exposed to described
Semiconductor crystal wafer is split, be the semiconductor crystal wafer is placed in after the graphical mask layer it is right in dry etching equipment
The gap that the mask layer exposes carries out dry etching, the multiple integrated circuit is separated one by one.
22. semiconductor crystal wafer dividing method according to claim 15, it is characterised in that：By the gap exposed to described
Semiconductor crystal wafer is split, and is to launch laser using nozzle after the graphical mask layer and spray plasma etching gas
The gap that body exposes to the mask layer performs etching, and the multiple integrated circuit is separated one by one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610778104.4A CN107799413A (en) | 2016-08-30 | 2016-08-30 | Lithographic method, etching device and semiconductor crystal wafer dividing method |
| TW106103855A TWI641045B (en) | 2016-08-30 | 2017-02-06 | Etching method, etching apparatus and method for dividing a semiconductor wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610778104.4A CN107799413A (en) | 2016-08-30 | 2016-08-30 | Lithographic method, etching device and semiconductor crystal wafer dividing method |
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| CN107799413A true CN107799413A (en) | 2018-03-13 |
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| CN201610778104.4A Pending CN107799413A (en) | 2016-08-30 | 2016-08-30 | Lithographic method, etching device and semiconductor crystal wafer dividing method |
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| TW (1) | TWI641045B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649005A (en) * | 2018-05-22 | 2018-10-12 | 徐亚琴 | A kind of semiconductor crystal wafer batch etching device |
| CN108711555A (en) * | 2018-05-22 | 2018-10-26 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer etching device |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7109862B2 (en) * | 2018-07-10 | 2022-08-01 | 株式会社ディスコ | Semiconductor wafer processing method |
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| CN103703545A (en) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | Hybrid laser and plasma etch wafer dicing using substrate carrier |
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| JP2008192877A (en) * | 2007-02-06 | 2008-08-21 | Seiko Epson Corp | Patterning apparatus and method |
| KR100897356B1 (en) * | 2007-10-02 | 2009-05-15 | 세메스 주식회사 | Method and apparatus of cleaning a substrate |
| US9142459B1 (en) * | 2014-06-30 | 2015-09-22 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination |
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| US4624736A (en) * | 1984-07-24 | 1986-11-25 | The United States Of America As Represented By The United States Department Of Energy | Laser/plasma chemical processing of substrates |
| US20070045252A1 (en) * | 2005-08-23 | 2007-03-01 | Klaus Kleine | Laser induced plasma machining with a process gas |
| CN103703545A (en) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | Hybrid laser and plasma etch wafer dicing using substrate carrier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108649005A (en) * | 2018-05-22 | 2018-10-12 | 徐亚琴 | A kind of semiconductor crystal wafer batch etching device |
| CN108711555A (en) * | 2018-05-22 | 2018-10-26 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer etching device |
| CN108711555B (en) * | 2018-05-22 | 2020-11-13 | 盛吉盛(宁波)半导体科技有限公司 | Silicon wafer etching device for semiconductor integrated circuit |
| CN112600530A (en) * | 2020-11-23 | 2021-04-02 | 景苏鹏 | Dry etching process method for thick-film surface acoustic wave filter |
Also Published As
| Publication number | Publication date |
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| TWI641045B (en) | 2018-11-11 |
| TW201820465A (en) | 2018-06-01 |
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