CN115732321A - Wafer etching and cleaning equipment and method - Google Patents
Wafer etching and cleaning equipment and method Download PDFInfo
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- CN115732321A CN115732321A CN202211513686.5A CN202211513686A CN115732321A CN 115732321 A CN115732321 A CN 115732321A CN 202211513686 A CN202211513686 A CN 202211513686A CN 115732321 A CN115732321 A CN 115732321A
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Abstract
The invention relates to the technical field of wafer etching, in particular to a wafer etching and cleaning device and a wafer etching and cleaning method for a thinning and metalizing process of the back of a wafer, which improve the adhesion of a coating film layer and reduce the deformation of the wafer; the method comprises the following steps: step 1, performing film pasting protection on the front side of a wafer without metal film plating; step 2, grinding the back of the wafer needing the metal coating; step 3, etching the back surface of the ground wafer through vacuum plasma to roughen the surface of the back surface of the wafer and reduce stress; step 4, cleaning the etched wafer; step 5, removing the cleaned front protective film of the crystal face; and 6, carrying out metal coating on the back of the etched and cleaned wafer.
Description
Technical Field
The invention relates to the technical field of wafer etching, in particular to a wafer etching and cleaning device and method for a thinning metallization process of the back of a wafer.
Background
With the high-power device and the high-end chip, the requirement on heat dissipation is higher and higher; however, when the integration density is greatly improved, a heat source starts to form a concentrated phenomenon on a chip, so that how to reduce the thermal resistance of the device and make the heat dissipation and cooling of the device become a key technical problem; thinning and metalizing the back surface of the wafer is a process route developed according to the technical requirement;
in the existing wafer back thinning metallization technology, an HF-HNO3 acid etching cleaning method is generally used in the industry to remove physical damage on the silicon surface, improve the strength of the ground thinned wafer and relieve the warping degree, the acid etching cleaning method brings challenges to the acid resistance and the temperature resistance of the front protective film, and the acid etching cleaning method is isotropic etching, so that the roughness value is larger and is favorable for adhesion when the etching reaction time is longer, but the function failure of the front protective film is easy to occur if the etching reaction time is too long, the adhesion of the adhesive film is reduced, and the phenomenon that the edge is subjected to acid corrosion to the front wafer is easy to occur; meanwhile, the strong acid HF-HNO3 combination has strong corrosivity, so that the environmental protection construction, wastewater discharge and industrial safety risk cost is high, and the total cost of the manufacturing process is high due to the fact that more working procedures are needed and a specific strong acid resistant protective film is needed.
Disclosure of Invention
In order to solve the technical problems, the invention provides a wafer etching and cleaning device and a wafer etching and cleaning method which can improve the adhesion of a coating film and reduce the deformation of a wafer.
The invention discloses a wafer etching and cleaning device and a method, comprising the following steps:
step 1, performing film sticking protection on the front side of a wafer without metal film plating;
and 6, carrying out metal coating on the back of the etched and cleaned wafer.
Preferably, the plasma etching in the step 3 adopts a physical and chemical combined action etching method, the surface material is removed by accelerating ion bombardment on the back surface of the wafer through a physical method, and the reaction rate of the atomic groups decomposed by the etching gas and the silicon substrate of the wafer is improved.
Preferably, the plasma etching in step 3 specifically includes the following steps:
1) Carrying out electron impact on the reaction gas through a radio frequency power supply to ionize the reaction gas to generate plasma;
2) Bombarding the back surface of the wafer by the generated partial plasma;
3) Absorbing energy by another part of plasma generated in the process to form active reaction groups, and carrying out chemical reaction with the surface of the wafer;
4) And sucking the product in the chemical reaction from the etched surface of the wafer through a vacuum system.
Preferably, the film structure of the metal plating film in the step 6 is composed of three metal layers, which are an upper adhesion layer, a barrier layer and a lower adhesion layer in sequence.
Preferably, the upper adhesion layer, the barrier layer and the lower adhesion layer are formed on the back surface of the etched wafer through film coating in sequence by a vacuum film coating method.
On the other hand, the wafer etching and cleaning equipment based on the method comprises the following steps:
the cavity is used as a reaction chamber for etching and cleaning the wafer; the cavity is provided with a feeding mechanism for controlling the wafer to automatically enter and exit the cavity;
a dry pump for evacuating the chamber;
the pressure regulating valve is used for controlling the vacuum pressure environment in the stable cavity;
a radio frequency power supply for providing energy for ionization of gas within the cavity.
Preferably, the cavity is further provided with a vacuum gauge and a plurality of sets of flow meters, the vacuum gauge is used for monitoring the gas pressure in the cavity, and the plurality of sets of flow meters are used for independently controlling the flow of various gases entering the cavity.
Preferably, the operation steps of the wafer etching and cleaning equipment include:
s1, placing a wafer to be etched in a vacuum chamber, closing the vacuum chamber, heating to a set temperature, vacuumizing to a set pressure by using a dry pump, and maintaining the vacuum pressure environment of the vacuum chamber;
s2, starting to introduce reaction gas to a set process working pressure, and controlling and maintaining a stable specific vacuum pressure environment through a pressure regulating valve;
s3, starting a radio frequency power supply, ionizing the reaction gas in the vacuum chamber, and forming plasma;
s4, bombarding the wafer through ions, and performing chemical reaction with the surface of the wafer to perform etching;
s5, after the plasma etching is finished, closing the radio frequency power supply, and introducing gas to break vacuum and restore to atmospheric pressure;
s6, opening the cavity, taking out the etched wafer, and cleaning and drying the wafer by pure water.
Preferably, the heating temperature in S1 is set to 30-160 DEG, and the vacuum chamber has a vacuum degree of 0.01mTorr to 1.0mTorr;
in S2, introducing Ar, CF4/NF3, O2 and the like into the vacuum chamber, wherein the flow rate is 50sccm to 200sccm;
in S3, the power supply starting power is 200 to 5000w;
in S4, the plasma etching time is 0.5min to 10min, and the coarsening average roughness is 0.05-0.6um;
s5, introducing vacuum breaking gas into the vacuum chamber to be N2;
the purity of the cleaned pure water in S6 is more than 12M ohm.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the surface of the wafer is etched and cleaned by vacuum plasma, so that the roughness of the surface of the wafer is improved, and the adhesion of a coating film layer is further improved; meanwhile, the surface stress of the etched wafer is far smaller than the residual stress left by the wafer after being ground, so that the deformation of the wafer can be effectively reduced; compared with the traditional acid etching method, the plasma etching process is simpler, the process is more environment-friendly, and the environment-friendly waste discharge cost in production is reduced.
Drawings
FIG. 1 is a schematic structural diagram of an etching cleaning apparatus;
in the drawings, the reference numbers: 1. a cavity; 2. a radio frequency power supply; 3. a vacuum gauge; 4. a flow meter; 5. a feeding mechanism.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the connection may be direct or indirect through an intermediate medium, and may be a communication between the two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art. This embodiment is written in a progressive manner.
The invention discloses a wafer etching cleaning method, which carries out metal coating on a wafer through the following processes:plaster with face Back grinding and other ion etching and membrane-tearing and metal film-plating;
during back grinding, the front surface of the wafer is physically contacted with the back surface, so that a protective film needs to be coated on the front surface of the wafer to avoid damage before back grinding.
As to why it is necessary to grind the back side of the wafer: in the power device, the self resistance value parameter of the wafer can be controlled through the thickness of the wafer, the thinner the thickness of the wafer is, the smaller the resistance value is, and meanwhile, the thinner the thickness of the wafer is, the thermal diffusion efficiency can be improved, the packaging volume of a chip can be reduced, the flexibility of the wafer can be improved, the scribing processing amount can be reduced, and the edge breakage incidence rate of the chip can be reduced; therefore, after the circuit layer is manufactured, the back of the wafer needs to be thinned to reach the required thickness; in this embodiment, the grinding head is used to apply an acting force to the wafer while rotating and grinding, and in order to ensure the uniformity of the surface roughness of the wafer, the feeding speed of the grinding head in the direction of the axis of the wafer is often reduced, and the slower the thinning speed is, the better the uniformity is.
The principle of vacuum plasma etching is that the physical and chemical comprehensive action mechanism is utilized, the physical process of ion bombardment can remove surface materials, and the ion bombardment has strong directionality; the ion bombardment can improve the chemical etching effect, so that the reaction efficiency of the reaction elements and silicon surface substances is higher; the comprehensive etching method combines the advantages of ion bombardment and surface chemical reaction, so that the etching has better selection ratio and line width control;
further, plasma etching is to use high-frequency glow discharge reaction to activate the reaction gas into active particles, such as atoms or radicals, which are diffused to the part to be etched, and react with the etched material to form volatile reactant to be removed; the basic etching principle for silicon-based materials is to replace the "silicon-silicon" bond with a "silicon-halogen" bond, thereby producing volatile silicon-halogen compounds; the etching gas for etching the silicon-based material comprises CF4, C2F6, C4F8, NF3, SF6 and the like; among the most common are CF4; but CF4 does not directly etch silicon; energetic electrons in the plasma impact the CF4 molecule to cleave it into CF3, CF2, C and F, which are very chemically reactive radicals.
Specifically, in the plasma etching process, under the condition of low pressure, reaction gas is excited by a radio frequency power supply to generate ionization and form plasma, the plasma consists of charged electrons and ions, and the gas in a reaction cavity can absorb energy and form a large number of active groups besides being converted into ions under the impact of the electrons; the active reaction group and the surface of the etched substance form a chemical reaction and a volatile reaction product, and the reaction product is separated from the surface of the etched substance and is pumped out of the cavity by a vacuum system to finish etching; taking CF4 reaction gas etching silicon as an example, the following is the principle and reaction equation of plasma etching reaction:
after the plasma etching cleaning process is finished, the protective film on the front side of the wafer needs to be removed, and the adopted method is that after the back side of the wafer is sucked by a vacuum disc capable of heating, the protective film is slowly removed from the notch of the edge of the wafer after etching by using tweezers, and then the removed protective film is pinched by fingers and slowly removed;
it should be noted that the heating during film uncovering can reduce the adhesion between the protective film and the wafer, which is beneficial to making film uncovering easier to realize and also can reduce the probability of breaking during film uncovering; in addition, an automatic film tearing machine can be adopted to reduce the defects caused by human factors.
When the back metal coating is carried out, two ways of plating are adopted, namely vacuum evaporation and vacuum sputtering; vacuum evaporation means heating an evaporation source under a vacuum condition, heating a plated material into steam atoms, enabling the steam atoms to reach the surface of the plated substrate in a linear motion, and condensing to form a solid film; the vacuum evaporation method is used for the wafer back crystal process, and has the advantages of simple equipment, easy operation and high film forming speed; the defects are that the adhesive force is small, and the step coverage capability is poor; the vacuum sputtering is that under a certain vacuum condition, ionized gas in the cavity bombards the surface of the target under the action of negative voltage, so that target particles obtain enough kinetic energy to be separated from the base material and migrate and deposit to the surface of the base material to form a metal layer; vacuum sputtering has the advantages of being capable of depositing high melting point metals and being suitable for depositing alloys and maintaining the capability of complex alloy original components; the sputtered atoms gain significant kinetic energy during sputtering, and this increased kinetic energy improves step coverage and adhesion.
The film structure often used for coating the film on the back of the wafer is a three-layer metal structure: the upper adhesion layer Cr/Ti/V, the barrier layer Ni/Ti and the lower adhesion layer Au/Ag, and the metal layer structures can realize the wafer back surface coating process through vacuum sputtering or vacuum evaporation.
As a specific embodiment of the foregoing solution, as shown in fig. 1, a vacuum plasma etching cleaning apparatus dedicated to the foregoing method specifically includes:
a vacuum chamber 1 as a reaction chamber for plasma etching cleaning;
a vacuum dry pump for providing a low pressure vacuum environment to the chamber;
a group of radio frequency power supplies 2 and matchers for providing energy for the ionization of the gas in the chamber to form plasma;
a set of vacuum gauges 3 for monitoring the gas pressure in the vacuum chamber;
a plurality of sets of flow meters 4 for independently controlling the flow of various gases entering the reaction chamber;
a group of automatic feeding mechanisms 5, which form a full-automatic picking and placing mechanism of the wafer in-out chamber.
When the vacuum plasma etching cleaning equipment is used:
firstly, placing a wafer to be etched in a vacuum chamber, closing the vacuum chamber, heating to a set temperature of 30-160 ℃, vacuumizing to a vacuum degree of 0.01mTorr to 1.0mTorr, and maintaining a vacuum pressure environment of the vacuum chamber;
then, starting to introduce reaction gases Ar, CF4/NF3, O2 and the like, wherein the flow rate of introduction is 50sccm to 200sccm, and the stable specific vacuum pressure environment is maintained through the control of a pressure regulating valve;
then, starting a radio frequency power supply, wherein the power supply power is 200-5000 w, ionizing the reaction gas in the vacuum chamber, and forming stable and continuous plasma;
then, in the time of 0.5min to 10min, ions bombard the wafer and chemically react with the surface of the wafer to form an etching effect, so that the average roughness of the surface reaches 0.05-0.6um;
after the plasma etching is finished, closing the radio frequency power supply, and introducing gas such as nitrogen to break vacuum, so that the pressure of the cavity is restored to atmospheric pressure;
and finally, opening the cavity, taking out the etched wafer, and cleaning and drying the surface of the wafer by using pure water with the purity of more than 12M ohm.
The wafer etching and cleaning equipment provided by the invention has the advantages that the installation mode, the connection mode or the arrangement mode are common mechanical modes, and the installation mode, the connection mode or the arrangement mode can be implemented as long as the beneficial effects of the equipment can be achieved.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A wafer etching and cleaning method is characterized by comprising the following steps:
step 1, performing film pasting protection on the front side of a wafer without metal film plating;
step 2, grinding the back of the wafer needing the metal coating;
step 3, etching the back surface of the ground wafer by vacuum plasma to roughen the surface of the back surface of the wafer and reduce stress;
step 4, cleaning the etched wafer;
step 5, removing the cleaned front protective film of the crystal face;
and 6, carrying out metal coating on the back of the etched and cleaned wafer.
2. The wafer etching cleaning method as claimed in claim 1, wherein the plasma etching in step 3 adopts a physical and chemical combined action etching method, ions are accelerated to bombard the back surface of the wafer to remove surface materials through a physical method, and the reaction rate of atomic groups decomposed by etching gas and silicon substrates of the wafer is increased.
3. The wafer etching cleaning method as claimed in claim 2, wherein the plasma etching in the step 3 specifically comprises the steps of:
1) Carrying out electron impact on the reaction gas through a radio frequency power supply to ionize the reaction gas to generate plasma;
2) Bombarding the back surface of the wafer through the generated partial plasma;
3) Absorbing energy by another part of plasma generated in the process to form active reaction groups, and carrying out chemical reaction with the surface of the wafer;
4) And sucking the product in the chemical reaction from the etched surface of the wafer through a vacuum system.
4. The wafer etching and cleaning method as claimed in claim 1, wherein the metal plating film of step 6 has a film structure comprising three metal layers, which are an upper adhesion layer, a barrier layer and a lower adhesion layer in this order.
5. The wafer etching cleaning method as claimed in claim 4, wherein the upper adhesion layer, the barrier layer and the lower adhesion layer are sequentially formed by vacuum coating on the etched back surface of the wafer.
6. A wafer etching cleaning apparatus, comprising:
the cavity body (1), the cavity body (1) is used as a reaction chamber for etching and cleaning the wafer; the cavity (1) is provided with a feeding mechanism (5) for controlling the wafer to automatically enter and exit the cavity;
a dry pump for evacuating the chamber;
the pressure regulating valve is used for controlling the vacuum pressure environment in the stable cavity;
the radio frequency power supply (2), radio frequency power supply (2) are used for providing energy for gas ionization in the cavity (1).
7. A wafer etching cleaning device according to claim 6, wherein the chamber is further provided with a vacuum gauge (3) and a plurality of sets of flow meters (4), the vacuum gauge (3) is used for monitoring the gas pressure in the chamber, and the plurality of sets of flow meters (4) are used for controlling the flow of each gas entering the chamber independently.
8. The wafer etching cleaning apparatus as claimed in claim 7, wherein the operating step of the wafer etching cleaning apparatus comprises:
s1, placing a wafer to be etched in a vacuum chamber, closing the vacuum chamber, heating to a set temperature, vacuumizing to a set pressure by using a dry pump, and maintaining a vacuum pressure environment of the vacuum chamber;
s2, starting to introduce reaction gas to a set process working pressure, and controlling and maintaining a stable specific vacuum pressure environment through a pressure regulating valve;
s3, starting a radio frequency power supply, ionizing the reaction gas in the vacuum chamber, and forming plasma;
s4, bombarding the wafer by ions, and carrying out chemical reaction with the surface of the wafer to carry out etching;
s5, after the plasma etching is finished, closing the radio frequency power supply, and introducing gas to break vacuum and restore to atmospheric pressure;
s6, opening the cavity, taking out the etched wafer, and cleaning with pure water and drying the surface.
9. The wafer etching cleaning apparatus as recited in claim 8, wherein:
the heating temperature in S1 is set to 30-160 DEG, and the vacuum degree of the vacuum chamber is 0.01mTorr to 1.0mTorr;
in S2, introducing Ar, CF4/NF3, O2 and the like into the vacuum chamber, wherein the flow rate is 50sccm to 200sccm;
in S3, the power supply starting power is 200 to 5000w;
in S4, the plasma etching time is 0.5min to 10min, and the coarsening average roughness is 0.05-0.6um;
s5, introducing vacuum breaking gas into the vacuum chamber to be N2;
and S6, the purity of the cleaned pure water is more than 12M ohm.
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| CN202211513686.5A CN115732321A (en) | 2022-11-30 | 2022-11-30 | Wafer etching and cleaning equipment and method |
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| US20200176257A1 (en) * | 2018-12-03 | 2020-06-04 | Disco Corporation | Method of processing wafer |
| CN113658858A (en) * | 2021-08-17 | 2021-11-16 | 顺芯科技有限公司 | Method for increasing yield of evaporation process |
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2022
- 2022-11-30 CN CN202211513686.5A patent/CN115732321A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693182A (en) * | 1995-02-21 | 1997-12-02 | Siemens Aktiengesellschaft | Method for damage etching the back side of a semiconductor disk having a protected front side |
| KR100863333B1 (en) * | 2007-06-27 | 2008-10-15 | 주식회사 효광 | Method for treating substrate and chip manufactured thereby |
| US20090042368A1 (en) * | 2007-08-09 | 2009-02-12 | Disco Corporation | Wafer processing method |
| CN101770939A (en) * | 2008-12-30 | 2010-07-07 | 东部高科股份有限公司 | Method for manufacturing semiconductor device |
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| CN113658858A (en) * | 2021-08-17 | 2021-11-16 | 顺芯科技有限公司 | Method for increasing yield of evaporation process |
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