CN107910245B - Method for reducing aluminum liner defects in semiconductor structure - Google Patents
Method for reducing aluminum liner defects in semiconductor structure Download PDFInfo
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- CN107910245B CN107910245B CN201711073027.3A CN201711073027A CN107910245B CN 107910245 B CN107910245 B CN 107910245B CN 201711073027 A CN201711073027 A CN 201711073027A CN 107910245 B CN107910245 B CN 107910245B
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- gas
- reaction cavity
- plasma
- aluminum
- aluminum liner
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 230000007547 defect Effects 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 238000004140 cleaning Methods 0.000 claims abstract description 29
- 238000001020 plasma etching Methods 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 55
- 239000012495 reaction gas Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000010926 purge Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 7
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910001679 gibbsite Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a method for reducing aluminum pad defects in a semiconductor structure, wherein the semiconductor structure comprises an aluminum pad, the surface of which comprises a plurality of defect products; providing a plasma etching device, wherein the plasma etching device comprises a reaction cavity, and a semiconductor structure is placed in the reaction cavity; the method comprises the following steps: forming plasma in the reaction cavity, and bombarding the surface of the aluminum liner by the plasma to remove defect products on the surface of the aluminum liner; and introducing cleaning gas into the reaction cavity, and cleaning and removing the defect products remained on the surface of the aluminum liner through the cleaning gas. The technical scheme has the beneficial effects that defect products generated by the aluminum liner in the reaction cavity are effectively removed, so that the problems that the device can be returned to a factory due to unqualified test requirements when a subsequent PID (system voltage tolerance test) and bonding test (welding spot push-pull force test) is carried out, and the cost is increased due to the increase of rejection rate can be avoided.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a method for reducing aluminum liner defects in a semiconductor structure.
Background
When the existing semiconductor structure is used for preparing and forming the aluminum liner, because of a plurality of uncertain factors existing in the reaction process, such as reaction gas, moisture existing in the air of the reaction cavity and the like, taken together, these factors form an aluminum oxide on the surface of the aluminum pad of the semiconductor structure, such as AlOxFx, etc., if the products on the surface of these aluminum pads are not removed in time, defects may form on the surface of the aluminum liner, which are undesirable during processing, when some defect products appear on the aluminum pad, the subsequent PID (system voltage withstand test) and bonding test (pad push-pull test) of the device can lead to the test failure, therefore, a method for effectively removing defect products generated on the surface of the aluminum pad due to the process is needed in the process of forming the aluminum pad.
Disclosure of Invention
Aiming at the problems of defects of the aluminum gasket caused by oxides generated on the surface of the aluminum gasket in the prior art, the method aims to effectively remove defect products generated on the aluminum gasket and avoid the problems of unqualified welding spot push-pull force test and system voltage tolerance test of the aluminum gasket caused by the defect products.
The specific technical scheme is as follows:
a method for reducing aluminum liner defects in a semiconductor structure, comprising providing a semiconductor structure comprising an aluminum liner, wherein a surface of the aluminum liner comprises a plurality of defect products;
providing plasma etching equipment, wherein the plasma etching equipment comprises a reaction cavity, and the semiconductor structure is placed in the reaction cavity;
the method comprises the following steps:
step S1, forming plasma in the reaction cavity, and bombarding the surface of the aluminum liner through the plasma to remove the defect products on the surface of the aluminum liner;
and step S2, introducing cleaning gas into the reaction cavity, and cleaning and removing the defect products remained on the surface of the aluminum liner through the cleaning gas.
Preferably, in the step S1, the method for forming the plasma to bombard the surface of the aluminum pad includes:
step S11, introducing various reaction gases into the reaction cavity;
step S12, forming a first high-pressure environment in the reaction cavity;
step S13, adjusting the radio frequency power of the plasma etching equipment to a first radio frequency power;
step S14, the multiple reaction gases form the plasma in the reaction cavity so as to bombard the defect products on the surface of the aluminum liner;
step S15, the plasma bombardment process is maintained for a first predetermined time and then ended, and step S2 is executed.
Preferably, the plurality of reactive gases include, CF4Gas, CH3Gas, Ar gas;
wherein the introduced CF4The flow rate of the gas is 60 standard milliliters per minute;
to the institute ofThe above CH3The flow rate of the gas is 20 standard milliliters per minute;
the flow rate of the Ar gas introduced was 20 standard milliliters per minute.
Preferably, the pressure of the first high-pressure environment formed in the reaction chamber is 250 mpa.
Preferably, the plasma etching apparatus includes an ionizer, and the method of forming the first rf frequency in the plasma etching apparatus in S13 includes:
step S131, setting the power of the radio frequency power supply of the ionizer to a first power value, and maintaining the ionizer in a high-frequency state;
step S132, adjusting the radio frequency power supply to a second power value to convert the ionizer from the high frequency state to the low frequency state;
the first power value is less than the second power value.
Preferably, the first predetermined time is 180 seconds.
Preferably, in the step S2, the method of removing the defect products remaining on the surface of the aluminum pad by introducing the cleaning gas includes:
step S21, introducing the cleaning gas into the reaction cavity;
step S22, forming a second high-pressure environment in the reaction cavity;
and step S23, adjusting the RF frequency of the plasma etching device to a second RF power and maintaining the RF frequency for a second predetermined time, and ending the step.
Preferably, the introduced cleaning gas is oxygen and Ar gas;
wherein the flow rate of the introduced oxygen is 1000 standard milliliters per minute;
the flow rate of the Ar gas is 100 standard milliliters per minute.
Preferably, the plasma etching apparatus includes an ionizer, and the method for forming the second rf frequency in the plasma etching apparatus in step S22 includes:
and setting the power of the radio frequency power supply of the ionizer to a third power value to maintain the ionizer in a high-frequency state.
Preferably, the second predetermined time is 15 seconds, and/or the pressure of the second high-pressure environment formed in the reaction chamber is 300 mpa.
The technical scheme has the following advantages or beneficial effects: the defect products generated by the aluminum liner are effectively removed in the reaction cavity, so that the problems that the device can be returned to a factory due to unqualified test requirements and the cost is increased due to the increase of rejection rate when the device is subjected to subsequent PID (system voltage tolerance test) and bonding test (welding spot push-pull force test) can be solved.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a flow chart of one embodiment of a method of reducing aluminum liner defects in a semiconductor structure according to the present invention;
FIG. 2 is a flow chart of a method for forming a plasma in an embodiment of a method for reducing aluminum liner defects in a semiconductor structure in accordance with the present invention;
FIG. 3 is a flowchart illustrating a method for forming a first RF frequency in an embodiment of a method for reducing aluminum liner defects in a semiconductor structure according to the present invention;
FIG. 4 is a flow chart of a method for removing defect organisms by a cleaning gas in an embodiment of a method for reducing aluminum liner defects in a semiconductor structure according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The present invention comprises a method for reducing aluminum liner defects in a semiconductor structure.
An embodiment of a method for reducing aluminum liner defects in a semiconductor structure is provided, wherein the semiconductor structure comprises an aluminum liner, the surface of the aluminum liner comprising a plurality of defect products;
providing a plasma etching device, wherein the plasma etching device comprises a reaction cavity, and a semiconductor structure is placed in the reaction cavity;
as shown in fig. 1, the method comprises the following steps:
step S1, forming plasma in the reaction cavity, and bombarding the surface of the aluminum liner through the plasma to remove defect products on the surface of the aluminum liner;
and step S2, introducing cleaning gas into the reaction cavity, and cleaning and removing the defect products remained on the surface of the aluminum liner through the cleaning gas.
In the prior art, the defect of the aluminum pad is caused by the existence of defect products, wherein the process of forming defect organisms can comprise;
Al→ Al3++ 3 e-; generating aluminum ions from aluminum;
Al3++3H2O→ Al(OH)3+3H+(ii) a Water present in the air of the reaction chamber;
Al(OH)3+HF+H2o → AlOxFx; HF can be provided in the wet etching process;
after forming the AlOxFx on the aluminum pad, subsequent PID (system voltage withstand test) and bonding test (pad push-pull test) of the device may cause a problem of device test failure.
In the invention, the plasma is formed in the reaction cavity of the plasma etching equipment, the defect products on the surface of the aluminum liner are bombarded and removed by the plasma, after the bombardment process of the plasma is completed, the cleaning gas is introduced into the placing cavity, and the purpose of introducing the cleaning gas is that unremoved products possibly remain after the defect products on the surface of the aluminum liner are bombarded and removed by the plasma, at the moment, the residual defect products can be removed by the cleaning gas, and the defect products formed on the surface of the aluminum liner can be effectively removed by the removal operation of the defect products.
In a preferred embodiment, as shown in FIG. 2, in step S1, the method of forming a plasma to bombard a surface of an aluminum pad comprises:
step S11, introducing various reaction gases into the reaction cavity;
step S12, forming a first high-pressure environment in the reaction cavity;
step S13, adjusting the radio frequency power of the plasma etching equipment to a first radio frequency power;
step S14, forming plasma in the reaction cavity by the reaction gas to bombard the defect product on the surface of the aluminum pad;
step S15, the plasma bombardment process is maintained for a first predetermined time and then ended, and step S2 is executed.
Among the above-mentioned technical scheme, can be provided with the gas and lead to the mouth in the reaction chamber, can let in the reaction chamber with the multiple first reaction gas that needs to participate in the reaction through gas delivery device, after the first reaction gas that lets in forms plasma in the reaction chamber, carry out the bombardment and get rid of the defect resultant on the surface to the aluminium liner.
In a preferred embodiment, the plurality of reactive gases include, CF4Gas, CH3Gas, Ar gas;
wherein the introduced CF4The flow rate of the gas is 60 standard milliliters per minute;
introduced CH3The flow rate of the gas is 20 standard milliliters per minute;
the flow rate of Ar gas was 20 standard ml per minute.
In the technical scheme, after the parameters are set by the plasma etching equipment, the introduced reaction gas is difficult to bind in the reaction cavity due to the fact that the movement between molecules and between atoms is severe, electrons between atoms have considerable kinetic energy to break away from the binding of the atoms to the atoms, the electrons become free electrons, the atoms lose the electrons and become positively charged ions, and the mixture of the electrons and the positively charged ions is plasma.
In a preferred embodiment, the first elevated pressure environment formed within the reaction chamber has a pressure of about 250 mpa.
In the above technical solution, the plasma further comprises a pressure control system for forming a high pressure environment in the reaction gas, and the pressure value can be adjusted by the pressure control system.
In a preferred embodiment, where the plasma etching apparatus includes an ionizer, as shown in fig. 3, the method of forming the first rf frequency for the plasma etching apparatus at S13 includes:
step S131, setting the power of the radio frequency power supply of the ion generator to a first power value to maintain the ion generator in a high-frequency state;
step S132, adjusting the radio frequency power supply to a second power value to convert the ionizer from a high frequency state to a low frequency state;
the first power value is less than the second power value.
In the above-described embodiment, the first power value is preferably 1500W, and the second power value is preferably 1000W.
In a preferred embodiment, the first predetermined time is 180 seconds.
In a preferred embodiment, as shown in fig. 4, the method for removing the defect products remaining on the surface of the aluminum pad by introducing the cleaning gas in step S2 includes:
step S21, introducing cleaning gas into the reaction cavity;
step S22, forming a second high-pressure environment in the reaction cavity;
and step S23, adjusting the RF frequency of the plasma etching device to a second RF power and maintaining the RF frequency for a second predetermined time.
In the above technical solution, after the plasma bombards the defect product on the surface of the aluminum pad, a cleaning operation of a cleaning gas is required to be performed, at this time, the introduced gas is changed into the cleaning gas, and a second high-pressure environment is formed in the reaction chamber controlled by the pressure control system, wherein the pressure value of the first high-pressure environment is greater than that of the second high-pressure environment, and the power of the radio frequency power supply is set to a third power value, preferably 300W, to maintain the high-frequency state.
In a preferred embodiment, the introduced cleaning gas is oxygen and Ar gas;
wherein the flow rate of the introduced oxygen is 1000 standard milliliters per minute;
the flow rate of the Ar gas is 100 standard milliliters per minute.
In a preferred embodiment, the plasma etching apparatus includes an ionizer, and the method of forming the second rf frequency in the plasma etching apparatus in step S22 includes:
the power of the radio frequency power supply of the ionizer is set to a third power value to maintain the ionizer in a high frequency state.
In a preferred embodiment, the second predetermined time is 15 seconds.
In a preferred embodiment, the second elevated pressure environment is formed in the reaction chamber at a pressure of about 300 MPa.
In one embodiment, CF with a flow rate of 60 standard milliliters per minute is first introduced into the reaction chamber4Gas, 20 standard milliliters per minute CH3Gas, 1500 milliliters of Ar gas per minute, then the pressure value in the reaction cavity is set to 250 pascals through a pressure control system to form a high-pressure environment, and then the power of a radio frequency power supply of the ion emitter is changedSetting the power of a radio frequency power supply of an ion emitter to be 100W to form a low frequency state after forming each row of high frequency states for a period of time, finally forming plasma by the introduced gas and bombarding the defect products on the surface, and stopping the current operation after maintaining the high frequency state for 180 seconds to enter a gas cleaning process to further remove the defect products remained on the surface of the aluminum liner;
the introduced gas is changed into oxygen with the flow rate of 1000 standard milliliters per minute and Ar gas with the flow rate of 100 standard milliliters per minute, the pressure value in the reaction cavity is set to 300 pascals through a pressure control system to form a high-pressure environment, then the power of a radio frequency power supply of the ion emitter is set to 300W to form a high-frequency state, then the residual defect products on the surface of the aluminum liner are continuously cleaned through cleaning gas, and the whole process is maintained at the end of 15 seconds.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (9)
1. A method for reducing aluminum liner defects in a semiconductor structure, comprising providing a semiconductor structure comprising an aluminum liner, wherein a surface of the aluminum liner comprises a plurality of defect products;
providing a plasma etching device, wherein the plasma etching device comprises a reaction cavity, and the semiconductor structure is placed in the reaction cavity;
the method comprises the following steps:
step S1, forming plasma in the reaction cavity, and bombarding the surface of the aluminum liner through the plasma to remove the defect products on the surface of the aluminum liner;
step S2, introducing cleaning gas into the reaction cavity, and cleaning and removing the defect products remained on the surface of the aluminum liner through the cleaning gas;
in the step S2, the method of removing the defect products remaining on the surface of the aluminum pad by introducing the cleaning gas includes:
step S21, introducing the cleaning gas into the reaction cavity;
step S22, forming a second high-pressure environment in the reaction cavity;
and step S23, adjusting the RF frequency of the plasma etching device to a second RF power and maintaining the RF frequency for a second predetermined time, and ending the step.
2. The method of claim 1, wherein in the step S1, the method of forming the plasma to bombard the surface of the aluminum pad comprises:
step S11, introducing reaction gas into the reaction cavity;
step S12, forming a first high-pressure environment in the reaction cavity;
step S13, adjusting the radio frequency power of the plasma etching equipment to a first radio frequency power;
step S14, the reaction gas forms the plasma in the reaction cavity to bombard the defect products on the surface of the aluminum liner;
step S15, the plasma bombardment process is maintained for a first predetermined time and then ended, and step S2 is executed.
3. The method of claim 2, wherein the reactive gas comprises CF4Gas, CH3Gas, Ar gas;
wherein the introduced CF4The flow rate of the gas is 60 standard milliliters per minute;
into said CH3The flow rate of the gas is 20 standard milliliters per minute;
the flow rate of the Ar gas introduced was 20 standard milliliters per minute.
4. The method of claim 2, wherein the first elevated pressure environment is formed in the reaction chamber at a pressure of about 250 MPa.
5. The method of reducing aluminum liner defects in a semiconductor structure as recited in claim 2, wherein the plasma etching apparatus includes an ionizer, and the step of causing the plasma etching apparatus to form the first rf power in the step S13 includes:
step S131, setting the power of the radio frequency power supply of the ionizer to a first power value, and maintaining the ionizer in a high-frequency state;
step S132, adjusting the radio frequency power supply to a second power value to convert the ionizer from the high frequency state to the low frequency state;
the first power value is less than the second power value.
6. The method of claim 2, wherein the first predetermined time is 180 seconds.
7. The method of claim 1, wherein the purge gas is oxygen and Ar;
wherein the flow rate of the introduced oxygen is 1000 standard milliliters per minute;
the flow rate of the Ar gas is 100 standard milliliters per minute.
8. The method of reducing aluminum pad defects in a semiconductor structure as recited in claim 1, wherein the plasma etching apparatus includes an ionizer, and the step S22 of causing the plasma etching apparatus to form the second rf power includes:
and setting the power of the radio frequency power supply of the ionizer to a third power value to maintain the ionizer in a high-frequency state.
9. The method of claim 1, wherein the second predetermined time is 15 seconds and the pressure of the second high pressure environment formed in the reaction chamber is 300 MPa.
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| CN201711073027.3A CN107910245B (en) | 2017-11-03 | 2017-11-03 | Method for reducing aluminum liner defects in semiconductor structure |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197269A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon slice etching method |
| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6313048B1 (en) * | 1997-03-03 | 2001-11-06 | Micron Technology, Inc. | Dilute cleaning composition and method for using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197269A (en) * | 2006-12-06 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon slice etching method |
| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |