CN108668423A - Plasma processing device and pre-cleaning processes - Google Patents

Plasma processing device and pre-cleaning processes Download PDF

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Publication number
CN108668423A
CN108668423A CN201710207264.8A CN201710207264A CN108668423A CN 108668423 A CN108668423 A CN 108668423A CN 201710207264 A CN201710207264 A CN 201710207264A CN 108668423 A CN108668423 A CN 108668423A
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CN
China
Prior art keywords
reaction chamber
radio frequency
frequency source
igniter
processing device
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Pending
Application number
CN201710207264.8A
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Chinese (zh)
Inventor
张彦召
刘建生
张超
师帅涛
张璐
陈鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Beijing North Microelectronics Co Ltd
Original Assignee
Beijing North Microelectronics Co Ltd
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Publication date
Application filed by Beijing North Microelectronics Co Ltd filed Critical Beijing North Microelectronics Co Ltd
Priority to CN201710207264.8A priority Critical patent/CN108668423A/en
Publication of CN108668423A publication Critical patent/CN108668423A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges

Abstract

A kind of plasma processing device of present invention offer and pre-cleaning processes comprising reaction chamber, upper radio frequency source, lower radio frequency source, inlet duct and igniter, wherein the pedestal for carrying substrates is provided in reaction chamber;Inlet duct is for conveying process gas into reaction chamber;Igniter is used to introduce the seed electrons made needed for process gas electric discharge to the inside of reaction chamber.Plasma processing device provided by the invention can improve process uniformity and technology stability, reduce substrate damage, improve process efficiency.

Description

Plasma processing device and pre-cleaning processes
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular, to a kind of plasma processing device and prerinse Technique.
Background technology
In semiconductor fabrication process, inductive coupling plasma generator (Inductive Coupled Plasma Emission Spectrometer, hereinafter referred to as ICP) highdensity plasma can be obtained under lower operating air pressure, And since it is with simple in structure, low cost, while can be to generating the radio frequency source of plasma and penetrating for substrate bearing platform The advantage of frequency source independent control, therefore, ICP devices are widely used in plasma etching, physical vapour deposition (PVD), plasmarized In the technique for learning vapor deposition, microelectromechanical systems and light emitting diode etc..
Fig. 1 is the structure chart of existing ICP devices.As shown in Figure 1, ICP devices include cavity 1, are arranged at 1 top of cavity Insulating cylinder 4 and the air inlet cover board 5 at the top of the insulating cylinder 4 is set.Wherein, wrapping around for insulating cylinder 4 is provided with radio frequency Coil 3 is connect by upper adaptation 8 with upper radio-frequency power supply 9.Pedestal 10 is provided in cavity 1, it, should to carrying substrates Pedestal 10 is connect by lower adaptation 11 with lower radio-frequency power supply 12.Also, air inlet 6 is provided on air inlet cover board 5, in cavity 1 bottom is provided with exhaust outlet 7.In addition, it is covered with shielding case 2 around radio-frequency coil 3 and air inlet cover board 5, the shielding case 2 Ground connection, to realize the effect of shielded radio frequency.
The processes of pre-cleaning processes is carried out as shown in Fig. 2, first, by air inlet 6 into chamber using above-mentioned ICP devices It is passed through the process gas (such as argon gas) of big flow, and the capacity by adjusting exhaust outlet 7, the indoor air pressure of chamber is kept In 10mT or more;Then, radio-frequency power supply 9 in unlatching, by upper adaptation 8 by RF energy feed-in radio-frequency coil 3, radio frequency energy Amount penetrates insulating cylinder 4 in the form of an electromagnetic wave, into chamber, and argon gas is excited, to generate plasma.Then, it opens Lower radio-frequency power supply 12, by lower adaptation 11 by the indoor pedestal 10 of RF energy feed-in chamber, to attract in plasma Ion moves downward, and bombards substrate surface.Starter step is completed at this time.Later, reduce the flow of process gas, and adjust exhaust The capacity of mouth 7, by the indoor air pressure drop of chamber down to 1mT or less (generally in 0.5~0.8mT), and it is straight to proceed by technique To completion, when technique finishes, air inlet 6 is closed, residual gas in 7 evacuation chamber room of exhaust outlet is passed through.
Pre-cleaning processes are carried out using above-mentioned ICP devices and are inevitably present problems in practical applications:
First, due to needing the indoor air pressure of chamber maintaining 10mT or more in starter step, make process gas to introduce Seed electrons needed for body electric discharge, ensure normal starter, this causes the free path of various particles shorter, the directionality of ion compared with Difference, to cause process uniformity to reduce.
Second, since the pending substrate of starter region distance under high pressure conditions is closer, higher starting voltage can be made At substrate damage.
Third, when carrying out technique, the indoor air pressure of chamber is a change procedure being gradually reduced, to ensure the equal of technique Even property, but air pressure changes and is unfavorable for the stability of entire technique, or even the case where will appear disconnected brightness.
Fourth, due to needing individually into the starter step of horizontal high voltage, the process time of consuming is longer, reduces production effect Rate.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of plasma process Equipment and pre-cleaning processes can improve process uniformity and technology stability, reduce substrate damage, improve process efficiency.
A kind of plasma processing device is provided to achieve the purpose of the present invention
(being inserted after claim determination)
The invention has the advantages that:
Plasma processing device provided by the invention, being introduced to the inside of reaction chamber by using igniter makes Seed electrons needed for process gas electric discharge, you can realize normal starter, without using higher chamber pressure, so as to Avoid the free path of various particles caused by due to chamber pressure is higher shorter, the directionality of ion is poor, and then can improve Process uniformity.Simultaneously as no longer needing to use high pressure starter, this not only can shorten the process time, improve process efficiency, and And during carrying out technique, chamber pressure can be made more stable, so as to improve technology stability.In addition, using upper It states igniter and generates the region distance pedestal of plasma in reaction chamber farther out, this can reduce substrate damage, to Improve product yield.
Pre-cleaning processes provided by the invention, by using above-mentioned plasma processing device provided by the invention to base Piece surface is cleaned, not only can be shorter to avoid the free path of various particles caused by due to chamber pressure is higher, ion Directionality is poor, so as to improve process uniformity, but also can shorten the process time, improves process efficiency, exists in addition During carrying out technique, chamber pressure can be made more stable, so as to improve technology stability.
Description of the drawings
Fig. 1 is the structure chart of existing ICP devices;
Fig. 2 is the procedural block diagram that pre-cleaning processes are carried out using existing ICP devices;
Fig. 3 is the structure chart of plasma processing device provided in an embodiment of the present invention;
Fig. 4 A are the enlarged drawing in the regions I in Fig. 3;
Fig. 4 B are the circuit diagram of igniter used in the embodiment of the present invention;
Fig. 5 is the flow diagram of pre-cleaning processes provided in an embodiment of the present invention.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention The plasma processing device and pre-cleaning processes of offer are described in detail.
Also referring to Fig. 3~Fig. 4 B, plasma processing device include reaction chamber, radio-frequency coil 23, upper radio frequency source, Lower radio frequency source, inlet duct and igniter 33, wherein reaction chamber is by cavity 21, the insulation being arranged at the top of the cavity 21 Cylinder 24 and the air inlet cover board 25 being arranged at 24 top of insulating cylinder limit.Inlet duct includes being arranged on air inlet cover board 25 Air inlet 26, to convey process gas into reaction chamber.The bottom of cavity 21 is provided with exhaust outlet 27, it is useless to be discharged Gas.Radio-frequency coil 23 is circumferentially positioned at the outside of insulating cylinder 26, is electrically connected with upper radio frequency source.Radio frequency source includes upper matching on this Device 28 and upper radio frequency source 29, for loading RF energy to radio-frequency coil 23, RF energy passes through 24 feed-in reaction chamber of insulating cylinder Chamber interior forms plasma with the indoor process gas of provocative reaction chamber.In addition, being additionally provided in reaction chamber for holding The pedestal 30 of substrate is carried, which is electrically connected with lower radio frequency source.The lower radio frequency source includes lower adaptation 31 and lower radio frequency source 32, For loading back bias voltage to pedestal 30, the electric field which forms can control plasma towards substrate motion.In addition, It is covered with shielding case 22 around radio-frequency coil 23 and air inlet cover board 25, the shielding case 22 ground connection, to realize the work of shielded radio frequency With.
Igniter 33 is fixed on by flange 252 on chamber cover board 25, makes work for being introduced to the inside of reaction chamber Seed electrons needed for skill gas discharge.So-called seed electrons refer to maintain the normal of operation stage plasma to put Electricity can excite the initial electronics of process gas formation plasma in ignition stage.The initial electronics is in the radio frequency electrical added outside Under the excitation of field, ionizes, generate the plasma of self-maintained discharge, that is, realize normal starter, the starter process is very of short duration, The plasma for capableing of stable discharging is obtained quickly.
From the foregoing, it will be observed that using 33 starter of above-mentioned igniter, without using higher chamber pressure, so as to avoid because Chamber pressure it is higher and caused by various particles free path it is shorter, the directionality of ion is poor, and then it is equal to improve technique Even property.Simultaneously as no longer need to use high pressure starter, this not only can shorten the process time, improve process efficiency, and into During row technique, chamber pressure can be made more stable, so as to improve technology stability.
In addition, the region for being generated plasma in reaction chamber using above-mentioned igniter 33 is located at close to air inlet cover board Near 25, which farther out, so as to reduce substrate damage, and then improves product yield.
The structure of igniter 33 provided in an embodiment of the present invention is described in detail below.Specifically, such as Fig. 4 A and Shown in Fig. 4 B, igniter 33 includes a pair of of ignitor 331 and ignition controller 332, wherein ignition controller 332 is arranged In the top of air inlet cover board 25, pulsed discharge is carried out to control ignitor 331.Also, it is provided on air inlet cover board 25 The input terminal (upper end) of flange port 251, ignitor 331 is electrically connected with ignition controller 332;Ignitor output end (under End) flange port 251 is passed through straight down, and extend to the inside of reaction chamber.During starter, ignition controller 332 exists Load pulses voltage on the output end of two ignitors 331, since the output end of two ignitors 331 is located at reaction chamber Inside, to make electric current pass through the process gas inside reaction chamber, and then process gas is excited to form plasma.Igniting Controller 332 can be common starter, which is generally made of pulsed discharge control circuit, pulsed discharge control Circuit is, for example, circuit as shown in Figure 4 B.
Preferably, above-mentioned igniter 33 further includes electrode drive mechanism (not shown), which uses In driving above-mentioned ignitor 331 to move, so that the output end of ignitor 331 moves in and out the inside of reaction chamber. In ignition stage, the output end of electrode drive mechanism drive ignition electrode 331 can be used to move into the inside of reaction chamber, carried out Plasma starter.After completing starter, reaction chamber is removed using the output end of electrode drive mechanism drive ignition electrode 331 The inside of room is located at the part plasma inside reaction chamber to avoid ignitor 331 and generates disturbance.Certainly, in reality In the application of border, even if 331 plasma of ignitor can't influence being normally carried out for technique if generating disturbance.Above-mentioned electricity The driving of motor and the realization of corresponding transmission mechanism to ignitor 331 may be used in pole driving mechanism.
It should be noted that reaction chamber is not limited to the above structure of the present embodiment use, in practical applications, instead It answers chamber that can also use any other structure, and or other modes similar with the present embodiment may be used by above-mentioned point Fiery device is fixed on the top chamber locular wall of the reaction chamber of arbitrary structures.
Need further exist for explanation, plasma processing device provided in an embodiment of the present invention can be used for substrate into Row pre-cleaning processes, to remove the impurity of substrate surface.Alternatively, can be used for other techniques.
It should also be noted that, in the present embodiment, inlet duct includes the air inlet being arranged at 25 top of air inlet cover board 26, but the present invention is not limited thereto, in practical applications, inlet duct can also use any other structure, and be arranged In any position of reaction chamber, as long as process gas can be conveyed into reaction chamber.
As another technical solution, Fig. 5 is the flow diagram of pre-cleaning processes provided in an embodiment of the present invention.It please refers to Fig. 5, the embodiment of the present invention also provide a kind of pre-cleaning processes, and which employs above-mentioned plasmas provided in an embodiment of the present invention to add Construction equipment cleans substrate surface, to remove the impurity of substrate surface.The pre-cleaning processes include the following steps:
S1 opens inlet duct (that is, air inlet 26), process gas is conveyed into reaction chamber, and make reaction chamber Air pressure is maintained at default pressure.
S2 opens igniter 33, upper radio frequency source and lower radio frequency source according to preset order;
S3 closes igniter 33;
S4 cleans substrate surface;
S5, radio frequency source and lower radio frequency source in closing;
S6 closes inlet duct.
Preferably, in order to avoid influencing process uniformity, above-mentioned default pressure is less than 10mT.It is further preferred that this is pre- If pressure is 1mT.
In above-mentioned steps S2, preset order can be:
Open igniter 33, upper radio frequency source and lower radio frequency source simultaneously;Alternatively, first opening igniter, open simultaneously afterwards Upper radio frequency source and lower radio frequency source;Alternatively, successively opening igniter, upper radio frequency source and lower radio frequency source successively.Wherein, pass through successively Igniter, upper radio frequency source and lower radio frequency source are opened successively, can be generated in reaction chamber using above-mentioned igniter 33 etc. The region distance pedestal of gas ions farther out, so as to reduce substrate damage, and then can improve product yield.
Pre-cleaning processes provided in an embodiment of the present invention, by using above-mentioned plasma provided in an embodiment of the present invention Process equipment cleans substrate surface, not only can be to avoid the free path of various particles caused by due to chamber pressure is higher Shorter, the directionality of ion is poor, so as to improve process uniformity, but also can shorten the process time, improves technique Efficiency can make chamber pressure more stable in addition during carrying out technique, so as to improve technology stability.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.

Claims (10)

1. a kind of plasma processing device, including reaction chamber, upper radio frequency source, lower radio frequency source and inlet duct, wherein in institute State the pedestal being provided in reaction chamber for carrying substrates;Inlet duct into the reaction chamber for conveying process gas Body, which is characterized in that further include igniter, the igniter, which is used to introduce to the inside of the reaction chamber, makes process gas Seed electrons needed for body electric discharge.
2. plasma processing device according to claim 1, which is characterized in that the igniter includes a pair of lights a fire Electrode and ignition controller, wherein
The ignition controller is arranged in the top of the top chamber locular wall of the reaction chamber, to control the ignitor into Row pulsed discharge;
Flange port is provided at the top of the reaction chamber, the input terminal of the ignitor is electrically connected with the ignition controller It connects, the output end of the ignitor passes through the flange port straight down, and extends to the inside of the reaction chamber.
3. plasma processing device according to claim 2, which is characterized in that the igniter further includes that electrode drives Motivation structure, the electrode drive mechanism is for driving the ignitor to move, so that the output end of the ignitor moves into Or remove the inside of the reaction chamber.
4. according to the plasma processing device described in claim 1-3 any one, which is characterized in that the reaction chamber packet Include cavity, the insulating cylinder being arranged at the top of the cavity and the chamber cover board being arranged at the top of the insulating cylinder;
The igniter is fixed on the chamber cover board;
The upper radio frequency source includes radio-frequency coil, upper adaptation and upper radio-frequency power supply, wherein the radio-frequency coil is looped around described Around insulating cylinder, and it is electrically connected with the upper radio-frequency power supply by the upper adaptation;The upper radio-frequency power supply is used for institute State radio-frequency coil load radio-frequency power.
5. according to the plasma processing device described in claim 1-3 any one, which is characterized in that the lower radio frequency source packet Include lower adaptation and lower radio-frequency power supply, the lower radio-frequency power supply is electrically connected by the lower adaptation with the pedestal, to The pedestal loads radio-frequency power.
6. plasma processing device according to claim 1, which is characterized in that the plasma processing device is used for Pre-cleaning processes are carried out to the substrate.
7. a kind of pre-cleaning processes, which is characterized in that using the plasma processing device described in claim 1-6 any one The substrate surface is cleaned;The pre-cleaning processes include the following steps:
S1 opens the inlet duct, and process gas is conveyed into the reaction chamber, and the air pressure of the reaction chamber is made to protect It holds in default pressure;
S2 opens the igniter, the upper radio frequency source and the lower radio frequency source according to preset order;
S3 closes the igniter;
S4 cleans the substrate surface;
S5 closes the upper radio frequency source and the lower radio frequency source;
S6 closes the inlet duct.
8. pre-cleaning processes according to claim 7, which is characterized in that in the step S2, the preset order is:
Open the igniter, the upper radio frequency source and the lower radio frequency source simultaneously;Alternatively,
The igniter is first opened, it is rear to open the upper radio frequency source and the lower radio frequency source simultaneously;Alternatively,
Successively the igniter, the upper radio frequency source and the lower radio frequency source are opened successively.
9. pre-cleaning processes according to claim 7, which is characterized in that the default pressure is less than 10mT.
10. pre-cleaning processes according to claim 9, which is characterized in that the default pressure is 1mT.
CN201710207264.8A 2017-03-31 2017-03-31 Plasma processing device and pre-cleaning processes Pending CN108668423A (en)

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Cited By (10)

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Publication number Priority date Publication date Assignee Title
CN110049614A (en) * 2019-04-28 2019-07-23 中国科学院微电子研究所 Microwave plasma device and plasma excitation method
CN110718440A (en) * 2019-10-16 2020-01-21 北京北方华创微电子装备有限公司 Atomic layer etching equipment and etching method
CN111312574A (en) * 2018-12-11 2020-06-19 江苏鲁汶仪器有限公司 Plasma glow starting auxiliary device and method
CN111328174A (en) * 2018-12-17 2020-06-23 北京北方华创微电子装备有限公司 Reaction chamber and plasma generating method
CN111755353A (en) * 2019-03-26 2020-10-09 北京北方华创微电子装备有限公司 Warming-up method and etching method
CN111968905A (en) * 2020-08-03 2020-11-20 北京北方华创微电子装备有限公司 Radio frequency glow starting control method and device for semiconductor equipment
CN111968912A (en) * 2020-08-24 2020-11-20 北京北方华创微电子装备有限公司 Polyimide etching method
CN112074069A (en) * 2020-09-07 2020-12-11 深圳先进技术研究院 Normal-pressure radio-frequency low-temperature plasma device
CN113394091A (en) * 2021-05-10 2021-09-14 上海华力集成电路制造有限公司 Dry etching radio frequency discharge enhancement method and dry etching equipment
CN113458086A (en) * 2021-06-03 2021-10-01 广东工业大学 Cleaning device and cleaning method for rocket engine parts

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Publication number Priority date Publication date Assignee Title
CN111312574A (en) * 2018-12-11 2020-06-19 江苏鲁汶仪器有限公司 Plasma glow starting auxiliary device and method
CN111328174A (en) * 2018-12-17 2020-06-23 北京北方华创微电子装备有限公司 Reaction chamber and plasma generating method
CN111755353A (en) * 2019-03-26 2020-10-09 北京北方华创微电子装备有限公司 Warming-up method and etching method
CN110049614B (en) * 2019-04-28 2021-12-03 中国科学院微电子研究所 Microwave plasma device and plasma excitation method
CN110049614A (en) * 2019-04-28 2019-07-23 中国科学院微电子研究所 Microwave plasma device and plasma excitation method
CN110718440A (en) * 2019-10-16 2020-01-21 北京北方华创微电子装备有限公司 Atomic layer etching equipment and etching method
CN110718440B (en) * 2019-10-16 2022-06-14 北京北方华创微电子装备有限公司 Atomic layer etching equipment and etching method
CN111968905A (en) * 2020-08-03 2020-11-20 北京北方华创微电子装备有限公司 Radio frequency glow starting control method and device for semiconductor equipment
CN111968905B (en) * 2020-08-03 2023-11-14 北京北方华创微电子装备有限公司 Radio frequency starting control method and device for semiconductor equipment
CN111968912A (en) * 2020-08-24 2020-11-20 北京北方华创微电子装备有限公司 Polyimide etching method
WO2022048024A1 (en) * 2020-09-07 2022-03-10 深圳先进技术研究院 Automatic ignition type low-temperature atmospheric-pressure radio-frequency plasma apparatus
CN112074069A (en) * 2020-09-07 2020-12-11 深圳先进技术研究院 Normal-pressure radio-frequency low-temperature plasma device
CN113394091A (en) * 2021-05-10 2021-09-14 上海华力集成电路制造有限公司 Dry etching radio frequency discharge enhancement method and dry etching equipment
CN113458086A (en) * 2021-06-03 2021-10-01 广东工业大学 Cleaning device and cleaning method for rocket engine parts

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Application publication date: 20181016