CN104988468A - Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device - Google Patents
Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device Download PDFInfo
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- CN104988468A CN104988468A CN201510446323.8A CN201510446323A CN104988468A CN 104988468 A CN104988468 A CN 104988468A CN 201510446323 A CN201510446323 A CN 201510446323A CN 104988468 A CN104988468 A CN 104988468A
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Abstract
The invention discloses a device for injection and deposition of metal plasma immersion ions on insulating material and an injecting and depositing method using the device, and relates to a device and method for treating ion injection. The device and method, which are disclosed by the invention, aim at solving the problems that when the metal plasma immersion ions are injected to the insulating material, neutralization of stored charge on the surface of the insulating material cannot be realized at present, a "light striking" phenomenon is possibly generated when the stored charge on the surface increases to a certain degree, and equipment can be damaged when the charge is seriously stored. The device comprises a gas plasma source, a metal gate net, a high-pressure target table, an insulating workpiece to be processed, a negative high-voltage impulse source, a magnetic conducting pipe, a metal cathode arc plasma source and a vacuum chamber. The method comprises the following steps: leading argon gas into the vacuum chamber; opening the gas plasma source, and regulating the power of the gas plasma source to 200W-400W; setting working parameters; and starting the device so as to complete the injecting and the depositing. The device and method, which are disclosed by the invention, are suitable for injecting and depositing the metal ions on the large-area surface of the insulating material.
Description
Technical field
The present invention relates to a kind of ion implantation treatment unit and method.
Background technology
Metal plasma immersion is ion implantation is, by magnetic catheter, metallic plasma is introduced vacuum processing chamber, and in the plasma, under the effect of pulsed negative bias, ion is accelerated and is injected into workpiece surface in workpiece submergence.At present, MePIII technology has been widely used in the surface modification of metal, semi-conductor, and for insulating material self-conductive poor-performing, usually needs to provide pulsed negative bias to realize the ion implantation of insulating material surface with metallic target platform.But due to insulating material selfcapacity effect, and positive charge, in the accumulation of insulating material surface, reduces insulating material surface potential in ion implantation process, injects ion energy and reduces, affect insulating material and finally inject effect.The method of assistant metal aperture plate can be adopted to gather intensity to what reduce insulating material surface charge, improve ion implantation energy.Because metallic plasma is produced by Pulsed cathodic arc metal plasma source, also metallic plasma is there is not at high-voltage pulse interval of rest, the neutralization of insulating material surface stored charge cannot be realized, may produce " sparking " when the surface accumulation quantity of electric charge is increased to a certain degree, time serious, can structure deteriorate be made.
Summary of the invention
The object of the invention is to solve and existingly carry out cannot realizing the neutralization of insulating material surface stored charge when metal plasma immersion is ion implantation to insulating material, when the increase of surperficial stored charge amount to a certain degree time may produce " sparking " phenomenon, the problem of structure deteriorate can be made time serious, and a kind of insulating material metal plasma immersion ion implantation and deplsition device is provided and uses it to carry out the method injected Yu deposit.
A kind of insulating material metal plasma immersion ion implantation and deplsition device comprises source gas plasma, metal grid mesh, high pressure target platform, processed insulation workpiece, negative high voltage impulse source, magnetic catheter, metallic cathode vacuum arc plasma source, vacuum chamber and inlet mouth;
Metal grid mesh, high pressure target platform and processed insulation workpiece is provided with in described vacuum chamber; Processed insulation trade union college is above high pressure target platform, and metal grid mesh covers on above high pressure target platform, and is connected with high pressure target platform;
Described source gas plasma is connected with vacuum chamber respectively with inlet mouth;
Described negative high voltage impulse source is connected with high pressure target platform;
Described magnetic catheter is connected with vacuum chamber, is provided with metallic cathode vacuum arc plasma source in magnetic catheter.
A kind of insulating material metal plasma immersion ion implantation and deplsition device is utilized to complete according to the following steps the method that insulating material carries out metal plasma immersion ion implantation and deplsition:
One, be fixed on by processed insulation workpiece on the high pressure target platform in vacuum chamber, metal grid mesh covers on above high pressure target platform, and is connected with high pressure target platform; Ti cathode is arranged on metallic cathode vacuum arc plasma source place, the vacuum tightness be evacuated in vacuum chamber is 1 × 10
-3below Pa, passes into the argon gas of 10sccm ~ 50sccm in vacuum chamber by inlet mouth, regulate the vacuum tightness in vacuum chamber to be 0.5Pa ~ 2Pa;
Two, open source gas plasma, by the power regulation of source gas plasma to 200W ~ 400W, regulate the air pressure in vacuum chamber, make the vacuum tightness in vacuum chamber be 0.05Pa ~ 0.1Pa;
Three, working parameter is set:
The pulsed voltage of negative high voltage impulse source is set as 10kV ~ 30kV, and width sets is 100 μ s ~ 400 μ s, and frequency setting is 10Hz ~ 50Hz, and high pressure delay adjustments is 10 μ s ~ 60 μ s; The rotational velocity of high pressure target platform is set as 0.5r/min ~ 5r/min; Be 50V ~ 80V by the minor arc voltage sets of metallic cathode vacuum arc plasma source, minor arc width sets is 100 μ s ~ 400 μ s;
Four, start: start negative high voltage impulse source, high pressure target platform and metallic cathode vacuum arc plasma source, carry out metal plasma immersion to processed insulation workpiece ion implantation, injection length is 0.5h ~ 5h, obtains the processed insulation workpiece after Implanted Titanium ion.
Principle of the present invention:
The present invention passes into argon gas in vacuum chamber, the jigger coupling radio frequency discharge mode occurred by metallic cathode vacuum arc plasma source produces high-density Ar plasma body in a vacuum chamber, the high voltage pulse interval of rest that negative high voltage impulse source produces, metal grid mesh and high pressure target platform all do not have high pressure, now Ar plasma body expands to the surface of processed insulation workpiece, the positive charge that negatron in Ar plasma body accumulates with surface neutralizes mutually, eliminate the electric charge of processed insulation workpiece surface accumulation, in " sparking " phenomenon that processed insulation workpiece surface occurs in preventing metal plasma immersion ion implantation.
Advantage of the present invention:
One, the present invention effectively can improve the injection effect of processed insulation workpiece by metal grid mesh, reduces the degree of processed insulation workpiece surface charge buildup, improves ion implantation energy; In ion implantation process by high pressure target platform rotate can realize big area be processed insulation workpiece metal ion evenly inject; And the negative high voltage impulse source pulse interval stage, utilize in Ar plasma body and can reduce the probability of processed insulation workpiece surface generation " sparking " in injection process with the method for processed insulation workpiece surface stored charge;
The degree of depth of the processed insulation workpiece surface alumina-ceramic top layer Ti element two, after the Implanted Titanium ion that obtains of the present invention is about 250nm, and present class Gaussian distribution, Ti element is about 6.7% in the atomic percent of alumina ceramic face, at injection about degree of depth 40nm, Ti concentration of element reaches peak value, and Ti atomic percentage conc reaches 13%.
The present invention is applicable to carry out large-area metal ion implantation and deposition on insulating material surface.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of insulating material metal plasma immersion ion implantation and deplsition device described in embodiment one; In Fig. 1,1 is source gas plasma, and 2 is metal grid mesh, and 3 is high pressure target platform, and 4 is processed insulation workpiece, and 5 is negative high voltage impulse source, and 6 is magnetic catheter, and 7 is metallic cathode vacuum arc plasma source, and 8 is vacuum chamber, and 9 is inlet mouth;
Fig. 2 utilizes a kind of insulating material metal plasma immersion ion implantation and deplsition device to carry out the structural representation of surface-area stored charge in processed insulation workpiece in metal plasma immersion ion implantation and deplsition process to insulating material; In Fig. 2,2 is metal grid mesh, and 3 is high pressure target platform, and 4 is processed insulation workpiece, and 10 is the positive charge that processed insulation workpiece surface accumulates;
Fig. 3 is the structural representation utilizing a kind of insulating material metal plasma immersion ion implantation and deplsition device to carry out neutralizing in processed insulation workpiece in metal plasma immersion ion implantation and deplsition process surperficial stored charge to insulating material; In Fig. 3,2 is metal grid mesh, and 3 is high pressure target platform, and 4 is the insulation workpiece that is processed, and 10 is the positive charge that processed insulation workpiece surface accumulates, and 11 is the negative charge in the Ar plasma body of source gas plasma generation;
Fig. 4 is the processed insulation workpiece surface alumina-ceramic top layer XPS element depth distribution figure after the Implanted Titanium ion that obtains of embodiment one step 4, in Fig. 4,1 is the processed insulation workpiece surface alumina-ceramic top layer O element depth distribution figure after the Implanted Titanium ion that obtains of embodiment one step 4, processed insulation workpiece surface alumina-ceramic top layer Al element depth distribution figure after the 2 Implanted Titanium ions obtained for embodiment one step 4, processed insulation workpiece surface alumina-ceramic top layer Ti element depth distribution figure after the 3 Implanted Titanium ions obtained for embodiment one step 4.
Embodiment
Embodiment one: present embodiment is that a kind of insulating material metal plasma immersion ion implantation and deplsition device comprises source gas plasma 1, metal grid mesh 2, high pressure target platform 3, processed insulation workpiece 4, negative high voltage impulse source 5, magnetic catheter 6, metallic cathode vacuum arc plasma source 7, vacuum chamber 8 and inlet mouth 9;
Metal grid mesh 2, high pressure target platform 3 and processed insulation workpiece 4 is provided with in described vacuum chamber 8; Processed insulation workpiece 4 is arranged on above high pressure target platform 3, and metal grid mesh 2 covers on above high pressure target platform 3, and is connected with high pressure target platform 3;
Described source gas plasma 1 is connected with vacuum chamber 8 respectively with inlet mouth 9;
Described negative high voltage impulse source 5 is connected with high pressure target platform 3;
Described magnetic catheter 6 is connected with vacuum chamber 8, is provided with metallic cathode vacuum arc plasma source 7 in magnetic catheter 6.
The principle of present embodiment:
Present embodiment passes into argon gas in vacuum chamber 8, the jigger coupling radio frequency discharge mode occurred by metallic cathode vacuum arc plasma source 7 produces high-density Ar plasma body in vacuum chamber 8, the high voltage pulse interval of rest that negative high voltage impulse source 5 produces, metal grid mesh 2 and high pressure target platform 3 all do not have high pressure, now Ar plasma body expands to the surface of processed insulation workpiece 4, the positive charge that negatron in Ar plasma body accumulates with surface neutralizes mutually, eliminate the electric charge of processed insulation workpiece 4 surface accumulation, in " sparking " phenomenon that processed insulation workpiece 4 surface occurs in preventing metal plasma immersion ion implantation.
The advantage of present embodiment:
One, present embodiment effectively can improve the injection effect of processed insulation workpiece 4 by metal grid mesh 2, reduces the degree of processed insulation workpiece 4 surface charge accumulation, improves ion implantation energy; In ion implantation process by high pressure target platform 3 rotate can realize big area be processed insulation workpiece 4 metal ion evenly inject; And the negative high voltage impulse source 5 pulse interval stage, utilize in Ar plasma body and can reduce the surperficial probability that " sparking " occurs of processed insulation workpiece 4 in injection process with the method for the surperficial stored charge of processed insulation workpiece 4.
The degree of depth of the processed insulation workpiece surface alumina-ceramic top layer Ti element two, after the Implanted Titanium ion that obtains of present embodiment is about 250nm, and present class Gaussian distribution, Ti element is about 6.7% in the atomic percent of alumina ceramic face, at injection about degree of depth 40nm, Ti concentration of element reaches peak value, and Ti atomic percentage conc reaches 13%.
Present embodiment is applicable to carry out large-area metal ion implantation and deposition on insulating material surface.
Embodiment two: the difference of present embodiment and embodiment one is: described processed insulation workpiece 4 is alumina-ceramic, tetrafluoroethylene, nylon or synthetic glass.Other are identical with embodiment one.
Embodiment three: the difference of present embodiment and embodiment one or two is: the material of described metal grid mesh 2 is stainless steel, titanium metal or copper metal.Other are identical with embodiment one or two.
Embodiment four: present embodiment utilizes a kind of insulating material metal plasma immersion ion implantation and deplsition device to complete according to the following steps the method that insulating material carries out metal plasma immersion ion implantation and deplsition:
One, be fixed on by processed insulation workpiece 4 on the high pressure target platform 3 in vacuum chamber 8, metal grid mesh 2 covers on above high pressure target platform 3, and is connected with high pressure target platform 3; Ti cathode is arranged on metallic cathode vacuum arc plasma source 7 place, the vacuum tightness be evacuated in vacuum chamber 8 is 1 × 10
-3below Pa, passes into the argon gas of 10sccm ~ 50sccm in vacuum chamber 8 by inlet mouth 9, regulate the vacuum tightness in vacuum chamber 8 to be 0.5Pa ~ 2Pa;
Two, open source gas plasma 1, by the power regulation of source gas plasma 1 to 200W ~ 400W, regulate the air pressure in vacuum chamber 8, make the vacuum tightness in vacuum chamber 8 be 0.05Pa ~ 0.1Pa;
Three, working parameter is set:
The pulsed voltage of negative high voltage impulse source 5 is set as 10kV ~ 30kV, and width sets is 100 μ s ~ 400 μ s, and frequency setting is 10Hz ~ 50Hz, and high pressure delay adjustments is 10 μ s ~ 60 μ s; The rotational velocity of high pressure target platform 3 is set as 0.5r/min ~ 5r/min; Be 50V ~ 80V by the minor arc voltage sets of metallic cathode vacuum arc plasma source 7, minor arc width sets is 100 μ s ~ 400 μ s;
Four, start: start negative high voltage impulse source 5, high pressure target platform 3 and metallic cathode vacuum arc plasma source 7, metal plasma immersion carries out to processed insulation workpiece 4 ion implantation, injection length is 0.5h ~ 5h, obtains the processed insulation workpiece 4 after Implanted Titanium ion.
The principle of present embodiment:
Present embodiment passes into argon gas in vacuum chamber 8, the jigger coupling radio frequency discharge mode occurred by metallic cathode vacuum arc plasma source 7 produces high-density Ar plasma body in vacuum chamber 8, the high voltage pulse interval of rest that negative high voltage impulse source 5 produces, metal grid mesh 2 and high pressure target platform 3 all do not have high pressure, now Ar plasma body expands to the surface of processed insulation workpiece 4, the positive charge that negatron in Ar plasma body accumulates with surface neutralizes mutually, eliminate the electric charge of processed insulation workpiece 4 surface accumulation, in " sparking " phenomenon that processed insulation workpiece 4 surface occurs in preventing metal plasma immersion ion implantation.
The advantage of present embodiment:
Present embodiment effectively can improve the injection effect of processed insulation workpiece 4 by metal grid mesh 2, reduces the degree of processed insulation workpiece 4 surface charge accumulation, improves ion implantation energy; In ion implantation process by high pressure target platform 3 rotate can realize big area be processed insulation workpiece 4 metal ion evenly inject; And the negative high voltage impulse source 5 pulse interval stage, utilize in Ar plasma body and can reduce the surperficial probability that " sparking " occurs of processed insulation workpiece 4 in injection process with the method for the surperficial stored charge of processed insulation workpiece 4.
Embodiment five: the difference of present embodiment and embodiment four is: the processed insulation workpiece 4 described in step one is alumina-ceramic, tetrafluoroethylene, nylon or synthetic glass.Other are identical with embodiment four.
Embodiment six: the difference of present embodiment and embodiment four or five is: the material of the metal grid mesh 2 described in step one is stainless steel, titanium metal or copper metal.Other are identical with embodiment four or five.
Embodiment seven: the difference of one of present embodiment and embodiment four to six is: the Ti cathode described in step one to be massfraction be 99% titanium metal.Other are identical with embodiment four to six.
Embodiment eight: the difference of one of present embodiment and embodiment four to seven is: in step one, processed insulation workpiece 4 is fixed on the high pressure target platform 3 in vacuum chamber 8, metal grid mesh 2 covers on above high pressure target platform 3, and is connected with high pressure target platform 3; Ti cathode is arranged on metallic cathode vacuum arc plasma source 7 place, the vacuum tightness be evacuated in vacuum chamber 8 is 1 × 10
-3below Pa, passes into the argon gas of 20sccm in vacuum chamber 8 by inlet mouth 9, regulate the vacuum tightness in vacuum chamber 8 to be 1Pa.Other are identical with embodiment four to seven.
Embodiment nine: the difference of one of present embodiment and embodiment four to eight is: open source gas plasma 1 in step 2, by the power regulation of source gas plasma 1 to 200W, regulate the air pressure in vacuum chamber 8, make the vacuum tightness in vacuum chamber 8 be 0.1Pa.Other are identical with embodiment four to eight.
Embodiment ten: the difference of one of present embodiment and embodiment four to nine is: in step 3, the pulsed voltage of negative high voltage impulse source 5 is set as 12.5V, width sets is 300 μ s, frequency setting is 20Hz, and high pressure delay adjustments is 40 μ s; The rotational velocity of high pressure target platform 3 is set as 1r/min; Be 60V by the minor arc voltage sets of metallic cathode vacuum arc plasma source 7, minor arc width sets is 300 μ s.Other are identical with embodiment four to nine.
Following examples are adopted to verify beneficial effect of the present invention:
Embodiment one: a kind of insulating material metal plasma immersion ion implantation and deplsition device comprises source gas plasma 1, metal grid mesh 2, high pressure target platform 3, processed insulation workpiece 4, negative high voltage impulse source 5, magnetic catheter 6, metallic cathode vacuum arc plasma source 7, vacuum chamber 8 and inlet mouth 9;
Metal grid mesh 2, high pressure target platform 3 and processed insulation workpiece 4 is provided with in described vacuum chamber 8; Processed insulation workpiece 4 is arranged on above high pressure target platform 3, and metal grid mesh 2 covers on above high pressure target platform 3, and is connected with high pressure target platform 3;
Described source gas plasma 1 is connected with vacuum chamber 8 respectively with inlet mouth 9;
Described negative high voltage impulse source 5 is connected with high pressure target platform 3;
Described magnetic catheter 6 is connected with vacuum chamber 8, is provided with metallic cathode vacuum arc plasma source 7 in magnetic catheter 6.
A kind of insulating material metal plasma immersion ion implantation and deplsition device is utilized to complete according to the following steps the method that insulating material carries out metal plasma immersion ion implantation and deplsition:
One, be fixed on by processed insulation workpiece 4 on the high pressure target platform 3 in vacuum chamber 8, metal grid mesh 2 covers on above high pressure target platform 3, and is connected with high pressure target platform 3; Ti cathode is arranged on metallic cathode vacuum arc plasma source 7 place, the vacuum tightness be evacuated in vacuum chamber 8 is 1 × 10
-3below Pa, passes into the argon gas of 20sccm in vacuum chamber 8 by inlet mouth 9, regulate the vacuum tightness in vacuum chamber 8 to be 1Pa;
Two, open source gas plasma 1, by the power regulation of source gas plasma 1 to 200W, regulate the air pressure in vacuum chamber 8, make the vacuum tightness in vacuum chamber 8 be 0.1Pa;
Three, working parameter is set:
The pulsed voltage of negative high voltage impulse source 5 is set as 12.5V, and width sets is 300 μ s, and frequency setting is 20Hz, and high pressure delay adjustments is 40 μ s; The rotational velocity of high pressure target platform 3 is set as 1r/min; Be 60V by the minor arc voltage sets of metallic cathode vacuum arc plasma source 7, minor arc width sets is 300 μ s;
Four, start: start negative high voltage impulse source 5, high pressure target platform 3 and metallic cathode vacuum arc plasma source 7, carry out metal plasma immersion to processed insulation workpiece 4 ion implantation, injection length is 4h, obtains the processed insulation workpiece 4 after Implanted Titanium ion;
Processed insulation workpiece 4 described in step one is alumina-ceramic;
The material of the metal grid mesh 2 described in step one is stainless steel;
Ti cathode described in step one to be massfraction be 99% titanium metal.
Fig. 2 utilizes a kind of insulating material metal plasma immersion ion implantation and deplsition device to carry out the structural representation of surface-area stored charge in processed insulation workpiece in metal plasma immersion ion implantation and deplsition process to insulating material; In Fig. 2,2 is metal grid mesh, and 3 is high pressure target platform, and 4 is processed insulation workpiece, and 10 is the positive charge that processed insulation workpiece surface accumulates;
Fig. 3 is the structural representation utilizing a kind of insulating material metal plasma immersion ion implantation and deplsition device to carry out neutralizing in processed insulation workpiece in metal plasma immersion ion implantation and deplsition process surperficial stored charge to insulating material; In Fig. 3,2 is metal grid mesh, and 3 is high pressure target platform, and 4 is the insulation workpiece that is processed, and 10 is the positive charge that processed insulation workpiece surface accumulates, and 11 is the negative charge in the Ar plasma body of source gas plasma generation;
Fig. 4 is the processed insulation workpiece surface alumina-ceramic top layer XPS element depth distribution figure after the Implanted Titanium ion that obtains of embodiment one step 4, in Fig. 4,1 is the processed insulation workpiece surface alumina-ceramic top layer O element depth distribution figure after the Implanted Titanium ion that obtains of embodiment one step 4, processed insulation workpiece surface alumina-ceramic top layer Al element depth distribution figure after the 2 Implanted Titanium ions obtained for embodiment one step 4, processed insulation workpiece surface alumina-ceramic top layer Ti element depth distribution figure after the 3 Implanted Titanium ions obtained for embodiment one step 4.
As can be seen from Figure 4, the degree of depth of the processed insulation workpiece surface alumina-ceramic top layer Ti element after the Implanted Titanium ion that embodiment one step 4 obtains is about 250nm, and present class Gaussian distribution, Ti element is about 6.7% in the atomic percent of alumina ceramic face, at injection about degree of depth 40nm, Ti concentration of element reaches peak value, and Ti atomic percentage conc reaches 13%.
Claims (10)
1. an insulating material metal plasma immersion ion implantation and deplsition device, is characterized in that a kind of insulating material metal plasma immersion ion implantation and deplsition device comprises source gas plasma (1), metal grid mesh (2), high pressure target platform (3), processed insulation workpiece (4), negative high voltage impulse source (5), magnetic catheter (6), metallic cathode vacuum arc plasma source (7), vacuum chamber (8) and inlet mouth (9);
Metal grid mesh (2), high pressure target platform (3) and processed insulation workpiece (4) is provided with in described vacuum chamber (8); Processed insulation workpiece (4) is arranged on high pressure target platform (3) top, and metal grid mesh (2) covers on high pressure target platform (3) top, and is connected with high pressure target platform (3);
Described source gas plasma (1) is connected with vacuum chamber (8) respectively with inlet mouth (9);
Described negative high voltage impulse source (5) is connected with high pressure target platform (3);
Described magnetic catheter (6) is connected with vacuum chamber (8), is provided with metallic cathode vacuum arc plasma source (7) in magnetic catheter (6).
2. a kind of insulating material metal plasma immersion ion implantation and deplsition device according to claim 1, is characterized in that described processed insulation workpiece (4) is alumina-ceramic, tetrafluoroethylene, nylon or synthetic glass.
3. a kind of insulating material metal plasma immersion ion implantation and deplsition device according to claim 1, is characterized in that the material of described metal grid mesh (2) is stainless steel, titanium metal or copper metal.
4. utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device described in claim 1 insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that utilizing a kind of insulating material metal plasma immersion ion implantation and deplsition device to complete according to the following steps the method that insulating material carries out metal plasma immersion ion implantation and deplsition:
One, insulation workpiece (4) that will be processed is fixed on the high pressure target platform (3) in vacuum chamber (8), metal grid mesh (2) covers on high pressure target platform (3) top, and is connected with high pressure target platform (3); Ti cathode is arranged on metallic cathode vacuum arc plasma source (7) place, the vacuum tightness be evacuated in vacuum chamber (8) is 1 × 10
-3below Pa, passes into the argon gas of 10sccm ~ 50sccm in vacuum chamber (8) by inlet mouth (9), regulate the vacuum tightness in vacuum chamber (8) to be 0.5Pa ~ 2Pa;
Two, source gas plasma (1) is opened, by the power regulation of source gas plasma (1) to 200W ~ 400W, regulate the air pressure in vacuum chamber (8), make the vacuum tightness in vacuum chamber (8) be 0.05Pa ~ 0.1Pa;
Three, working parameter is set:
The pulsed voltage of negative high voltage impulse source (5) is set as 10kV ~ 30kV, and width sets is 100 μ s ~ 400 μ s, and frequency setting is 10Hz ~ 50Hz, and high pressure delay adjustments is 10 μ s ~ 60 μ s; The rotational velocity of high pressure target platform (3) is set as 0.5r/min ~ 5r/min; Be 50V ~ 80V by the minor arc voltage sets of metallic cathode vacuum arc plasma source (7), minor arc width sets is 100 μ s ~ 400 μ s;
Four, start: start negative high voltage impulse source (5), high pressure target platform (3) and metallic cathode vacuum arc plasma source (7), metal plasma immersion carries out to processed insulation workpiece (4) ion implantation, injection length is 0.5h ~ 5h, obtains the processed insulation workpiece (4) after Implanted Titanium ion.
5. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that the processed insulation workpiece (4) described in step one is alumina-ceramic, tetrafluoroethylene, nylon or synthetic glass.
6. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that the material of the metal grid mesh (2) described in step one is stainless steel, titanium metal or copper metal.
7. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that the Ti cathode described in step one to be massfraction be the titanium metal of 99%.
8. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, insulation workpiece (4) that it is characterized in that being processed in step one is fixed on the high pressure target platform (3) in vacuum chamber (8), metal grid mesh (2) covers on high pressure target platform (3) top, and is connected with high pressure target platform (3); Ti cathode is arranged on metallic cathode vacuum arc plasma source (7) place, the vacuum tightness be evacuated in vacuum chamber (8) is 1 × 10
-3below Pa, by passing into the argon gas of 20sccm with inlet mouth (9) in vacuum chamber (8), regulates the vacuum tightness in vacuum chamber (8) to be 1Pa.
9. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that in step 2, opening source gas plasma (1), by the power regulation of source gas plasma (1) to 200W, regulate the air pressure in vacuum chamber (8), make the vacuum tightness in vacuum chamber (8) be 0.1Pa.
10. according to claim 4ly utilize a kind of insulating material metal plasma immersion ion implantation and deplsition device insulating material to be carried out to the method for metal plasma immersion ion implantation and deplsition, it is characterized in that, in step 3, the pulsed voltage of negative high voltage impulse source (5) is set as 12.5V, width sets is 300 μ s, frequency setting is 20Hz, and high pressure delay adjustments is 40 μ s; The rotational velocity of high pressure target platform (3) is set as 1r/min; Be 60V by the minor arc voltage sets of metallic cathode vacuum arc plasma source (7), minor arc width sets is 300 μ s.
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| CN107346723A (en) * | 2017-07-13 | 2017-11-14 | 厦门芯光润泽科技有限公司 | A kind of ion implantation device for chip |
| CN107346723B (en) * | 2017-07-13 | 2019-02-19 | 厦门芯光润泽科技有限公司 | A kind of ion implantation device for chip |
| CN114836735A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | ICP-based plasma coating device and method |
| CN114836735B (en) * | 2021-02-01 | 2024-01-19 | 江苏菲沃泰纳米科技股份有限公司 | Plasma coating device and method based on ICP |
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