CN107346723A - A kind of ion implantation device for chip - Google Patents
A kind of ion implantation device for chip Download PDFInfo
- Publication number
- CN107346723A CN107346723A CN201710571769.2A CN201710571769A CN107346723A CN 107346723 A CN107346723 A CN 107346723A CN 201710571769 A CN201710571769 A CN 201710571769A CN 107346723 A CN107346723 A CN 107346723A
- Authority
- CN
- China
- Prior art keywords
- motorized rails
- pillar
- base
- ion
- rotating bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Abstract
The invention discloses a kind of ion implantation device for chip, including base, the top side of the base is welded with the first pillar, horizontally disposed through hole is offered in the middle part of first pillar, and bearing is socketed with through hole, the inwall of bearing is socketed with rotating bar, the one end of the rotating bar away from the first pillar has been screwed sucker, the top side of the base has been screwed servomotor, the top outer wall opposite side of the base offers the second motorized rails and the 3rd motorized rails respectively, the middle of 3rd motorized rails and the second motorized rails is perpendicular.The present invention is by driving the first sliding block to be moved up and down in the first motorized rails with this to adjust the vertical position of ion gun head, rotating bar is rotated by the drive of servomotor, sucker can firmly adsorb substrate to be implanted, the ion implanting work operations of large area can be thus realized, improving production efficiency reduces whole production cost.
Description
Technical field
The present invention relates to ion implantation technique field, more particularly to a kind of ion implantation device for chip.
Background technology
When ion implanting refers in the air have surely a branch of one block of solid material of ion beam directive, ion beam is solid material
Atom or the knocking-on solid material surface of molecule, this phenomenon are called sputtering；And when ion beam is mapped to solid material, from solid material
Expect that surface bullet is returned, or pass solid material and go, these phenomenons are called scattering, and it is ion beam to have a kind of phenomenon in addition
Be mapped to after solid material, by solid material resistance and speed slowly lowers, and eventually settle in solid material
This phenomenon, in the electronics industry, ion implanting becomes a kind of important doping techniques in microelectronic technique, and control
One important means of MOSFET threshold voltages processed.Therefore manufactured in the present age in large scale integrated circuit, it may be said that be that one kind must
Indispensable means.When in use, working area is small to carry out list to substrate to be implanted to current wafer ion injection device
Point injection, production efficiency is low, and existing ion implantation device is complicated, and production cost is high.
The content of the invention
The invention aims to solve shortcoming present in prior art, and a kind of ion for chip proposed
Injection device.
To achieve these goals, present invention employs following technical scheme：
A kind of ion implantation device for chip, including base, the top side of the base is welded with the first pillar, described
Horizontally disposed through hole is offered in the middle part of first pillar, and bearing is socketed with through hole, the inwall of bearing is socketed with rotating bar,
The one end of the rotating bar away from the first pillar has been screwed sucker, and the top side of the base is screwed
There is servomotor, the top outer wall opposite side of the base offers the second motorized rails and the 3rd motorized rails respectively, described
The middle of 3rd motorized rails and the second motorized rails is perpendicular, and the 3rd motorized rails and the second motorized rails are connected,
The inside of second motorized rails is inlaid with the second sliding block, and the top of second sliding block is welded with second be vertically arranged
Post, second pillar offer the first motorized rails, the inside edge of first motorized rails with respect to the side of the first pillar
Embedded with the first sliding block, the described one end of first sliding block away from the first motorized rails has been screwed ion generator, described
Ion generator is welded with ion gun head close to one end of sucker, and the bottom of the ion generator is welded with electric expansion bar,
The bottom of the electric expansion bar has been screwed horizontally disposed plummer, and one end of plummer is welded on second
The lateral wall of post.
Preferably, the rotating bar runs through the first pillar, and rotating bar passes through V bands and servo close to one end of the first pillar
The output shaft drive connection of motor.
Preferably, the servomotor is connected with switch by wire, and switch is connected with controller, the model of controller
For DATA-7311.
Preferably, the height and sucker apart from base of the ion gun head are engaged apart from the height of base.
Preferably, the length of first motorized rails is less than the height of the second pillar.
Preferably, the length and width of second motorized rails and the 3rd motorized rails is respectively less than the length and width of base
Degree.
Beneficial effects of the present invention are：This device structure is simple, in use, by controlling the second sliding block electronic to be led second
Moved in rail and the 3rd motorized rails to adjust horizontal level of the ion gun head to substrate to be implanted, afterwards in driving first
Sliding block is moved up and down with this in the first motorized rails to adjust the vertical position of ion gun head, is made by the drive of servomotor
Rotating bar is rotated, and substrate to be implanted can firmly be adsorbed, can thus realize the ion implanting operation of large area, carry by sucker
High efficiency, reduce whole production cost.
Brief description of the drawings
Fig. 1 is a kind of structural representation of ion implantation device for chip proposed by the present invention；
Fig. 2 is a kind of partial structural diagram of ion implantation device for chip proposed by the present invention.
In figure：1 base, 2 servomotors, 3 rotating bars, 4 first pillars, 5 suckers, 6 ion gun heads, 7 ion generators,
8 first sliding blocks, 9 first motorized rails, 10 electric expansion bars, 11 second pillars, 12 plummers, 13 second sliding blocks, 14 second
Motorized rails, 15 the 3rd motorized rails.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.
Reference picture 1-2, a kind of ion implantation device for chip, including base 1, the top side of base 1 are welded with
First pillar 4, the middle part of the first pillar 4 offers horizontally disposed through hole, and bearing is socketed with through hole, the inner wall sleeve of bearing
Rotating bar 3 is connected to, the one end of rotating bar 3 away from the first pillar 4 has been screwed sucker 5, and the top side of base 1 passes through
Screw is fixed with servomotor 2, and the top outer wall opposite side of base 1 offers the second motorized rails 14 and the 3rd and electronic led respectively
The middle of rail 15, the 3rd motorized rails 15 and the second motorized rails 14 is perpendicular, and the 3rd motorized rails 15 and second are electronic
Guide rail 14 is connected, and the inside of the second motorized rails 14 is inlaid with the second sliding block 13, and the top of the second sliding block 13 is welded with vertically
The second pillar 11 set, the side of relative first pillar 4 of the second pillar 11 offer the first motorized rails 9, and first electronic leads
The inside of rail 9 is inlaid with the first sliding block 8, and the one end of the first sliding block 8 away from the first motorized rails 9 has been screwed ion hair
Raw device 7, ion generator 7 are welded with ion gun head 6 close to one end of sucker 5, and the bottom of ion generator 7 is welded with electronic stretch
Contracting bar 10, the bottom of electric expansion bar 10 have been screwed horizontally disposed plummer 12, and one end weldering of plummer 12
It is connected on the lateral wall of the second pillar 11.
In the present invention, rotating bar 3 runs through the first pillar 4, and rotating bar 3 by V bands and is watched close to one end of the first pillar 4
The output shaft drive connection of motor 2 is taken, servomotor 2 is connected with switch by wire, and switch is connected with controller, controller
Model DATA-7311, the height and sucker 5 apart from base 1 of ion gun head 6 be engaged apart from the height of base 1,
The length of one motorized rails 9 is less than the height of the second pillar 11, the length of the second motorized rails 14 and the 3rd motorized rails 15 and
Width is respectively less than the length and width of base 1.
Operation principle：In use, by controlling the second sliding block 13 in the second motorized rails 14 and the 3rd motorized rails 15
Move to adjust horizontal level of the ion gun head 6 to substrate to be implanted, driving the first sliding block 8 electronic to be led first afterwards
Moved up and down in rail 9 with this to adjust the vertical position of ion gun head 6, rotate rotating bar 3 by the drive of servomotor 2,
Sucker 5 can firmly adsorb substrate to be implanted, can thus realize the ion implanting operation of large area.
The preferable embodiment of the present invention is the foregoing is only, but protection scope of the present invention is not limited thereto,
Any one skilled in the art the invention discloses technical scope in, technique according to the invention scheme and its
Inventive concept is subject to equivalent substitution or change, should all be included within the scope of the present invention.
Claims (5)
1. a kind of ion implantation device for chip, including base（1）, it is characterised in that the base（1）Top side
It is welded with the first pillar（4）, first pillar（4）Middle part offer horizontally disposed through hole, and axle is socketed with through hole
Hold, the inwall of bearing is socketed with rotating bar（3）, the rotating bar（3）Away from the first pillar（4）One end be screwed
Sucker（5）, the base（1）Top side be screwed servomotor（2）, the base（1）Top outer wall
Opposite side offers the second motorized rails respectively（14）With the 3rd motorized rails（15）, the 3rd motorized rails（15）With second
Motorized rails（14）Middle it is perpendicular, and the 3rd motorized rails（15）With the second motorized rails（14）It is connected, described
Two motorized rails（14）Inside be inlaid with the second sliding block（13）, second sliding block（13）Top be welded with what is be vertically arranged
Second pillar（11）, second pillar（11）With respect to the first pillar（4）Side offer the first motorized rails（9）, it is described
First motorized rails（9）Inside be inlaid with the first sliding block（8）, first sliding block（8）Away from the first motorized rails（9）One
End has been screwed ion generator（7）, the ion generator（7）Close to sucker（5）One end be welded with ion gun
Head（6）, the ion generator（7）Bottom be welded with electric expansion bar（10）, the electric expansion bar（10）Bottom lead to
Cross screw and be fixed with horizontally disposed plummer（12）, and plummer（12）One end be welded on the second pillar（11）Outside
Wall.
A kind of 2. ion implantation device for chip according to claim 1, it is characterised in that the rotating bar（3）
Through the first pillar（4）, and rotating bar（3）Close to the first pillar（4）One end pass through V bands and servomotor（2）Output shaft
Drive connection.
A kind of 3. ion implantation device for chip according to claim 1, it is characterised in that the ion gun head
（6）Apart from base（1）Height and sucker（5）Apart from base（1）Height be engaged.
4. a kind of ion implantation device for chip according to claim 1, it is characterised in that described first electronic leads
Rail（9）Length be less than the second pillar（11）Height.
5. a kind of ion implantation device for chip according to claim 1, it is characterised in that described second electronic leads
Rail（14）With the 3rd motorized rails（15）Length and width be respectively less than base（1）Length and width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710571769.2A CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710571769.2A CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107346723A true CN107346723A (en) | 2017-11-14 |
| CN107346723B CN107346723B (en) | 2019-02-19 |
Family
ID=60257784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710571769.2A Active CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107346723B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464536A (en) * | 2022-02-17 | 2022-05-10 | 厦门中能微电子有限公司 | TRENCH MOSFET optimization process integrated with ESD diode |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0973873A (en) * | 1995-09-05 | 1997-03-18 | Nissin Electric Co Ltd | Holder drive |
| US5731592A (en) * | 1995-12-29 | 1998-03-24 | Samsung Electronics Co., Ltd. | Exhaust system for an ion implanter |
| KR20020080921A (en) * | 2001-04-18 | 2002-10-26 | 삼성전자 주식회사 | beam gate functioning equipment of semiconductor device ion implanter |
| JP2008059994A (en) * | 2006-09-01 | 2008-03-13 | Nissin Ion Equipment Co Ltd | Ion beam irradiation apparatus and ion beam irradiation method |
| CN103237918A (en) * | 2010-11-30 | 2013-08-07 | 德国罗特·劳股份有限公司 | Method and device for ion implantation |
| CN104576275A (en) * | 2013-10-24 | 2015-04-29 | 北京中科信电子装备有限公司 | Uniformity correction control system for ion implanter |
| CN104988468A (en) * | 2015-07-27 | 2015-10-21 | 哈尔滨工业大学 | Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device |
| CN105206493A (en) * | 2014-06-17 | 2015-12-30 | 住友重机械离子技术有限公司 | Ion implantation apparatus and control method for ion implantation apparatus |
-
2017
- 2017-07-13 CN CN201710571769.2A patent/CN107346723B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0973873A (en) * | 1995-09-05 | 1997-03-18 | Nissin Electric Co Ltd | Holder drive |
| US5731592A (en) * | 1995-12-29 | 1998-03-24 | Samsung Electronics Co., Ltd. | Exhaust system for an ion implanter |
| KR20020080921A (en) * | 2001-04-18 | 2002-10-26 | 삼성전자 주식회사 | beam gate functioning equipment of semiconductor device ion implanter |
| JP2008059994A (en) * | 2006-09-01 | 2008-03-13 | Nissin Ion Equipment Co Ltd | Ion beam irradiation apparatus and ion beam irradiation method |
| CN103237918A (en) * | 2010-11-30 | 2013-08-07 | 德国罗特·劳股份有限公司 | Method and device for ion implantation |
| CN104576275A (en) * | 2013-10-24 | 2015-04-29 | 北京中科信电子装备有限公司 | Uniformity correction control system for ion implanter |
| CN105206493A (en) * | 2014-06-17 | 2015-12-30 | 住友重机械离子技术有限公司 | Ion implantation apparatus and control method for ion implantation apparatus |
| CN104988468A (en) * | 2015-07-27 | 2015-10-21 | 哈尔滨工业大学 | Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464536A (en) * | 2022-02-17 | 2022-05-10 | 厦门中能微电子有限公司 | TRENCH MOSFET optimization process integrated with ESD diode |
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| Publication number | Publication date |
|---|---|
| CN107346723B (en) | 2019-02-19 |
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