CN107346723B - A kind of ion implantation device for chip - Google Patents
A kind of ion implantation device for chip Download PDFInfo
- Publication number
- CN107346723B CN107346723B CN201710571769.2A CN201710571769A CN107346723B CN 107346723 B CN107346723 B CN 107346723B CN 201710571769 A CN201710571769 A CN 201710571769A CN 107346723 B CN107346723 B CN 107346723B
- Authority
- CN
- China
- Prior art keywords
- pillar
- motorized rails
- pedestal
- ion
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011343 solid material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000252254 Catostomidae Species 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of ion implantation devices for chip, including pedestal, the top side of the pedestal is welded with the first pillar, horizontally disposed through-hole is offered in the middle part of first pillar, and bearing is socketed in through-hole, the inner wall of bearing is socketed with rotating bar, the rotating bar has been screwed sucker far from one end of the first pillar, the top side of the pedestal has been screwed servo motor, the top outer wall other side of the pedestal offers the second motorized rails and third motorized rails respectively, the middle of the third motorized rails and the second motorized rails is perpendicular.The present invention moves up and down in the first motorized rails with this vertical position for adjusting ion gun head by the first sliding block of driving, rotating bar is rotated by the drive of servo motor, sucker can firmly adsorb substrate to be implanted, the ion implanting work operations of large area thus may be implemented, improving production efficiency reduces entire production cost.
Description
Technical field
The present invention relates to ion implantation technique field more particularly to a kind of ion implantation devices for chip.
Background technique
Ion implanting refers to that surely ion beam is solid material when having a branch of one block of solid material of ion beam directive in the air
Atom or the knocking-on solid material surface of molecule, this phenomenon are called sputtering；And when ion beam is mapped to solid material, from solid material
Expect surface bullet back, or be pierced by solid material and go, these phenomenons are called scattering, and in addition having a kind of phenomenon is ion beam
Be mapped to after solid material, by solid material resistance and speed slowly lowers, and eventually settle in solid material
This phenomenon, in the electronics industry, ion implanting becomes the important doping techniques of one of microelectronic technique, and control
One important means of MOSFET threshold voltage processed.Therefore in present age manufacture large scale integrated circuit, it may be said that be that one kind must
Indispensable means.When in use, working area is small to carry out list to substrate to be implanted to current wafer ion injection device
Point injection, production efficiency is low, and structure is complicated for existing ion implantation device, high production cost.
Summary of the invention
The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of ion for chip proposed
Injection device.
To achieve the goals above, present invention employs following technical solutions:
The top side of a kind of ion implantation device for chip, including pedestal, the pedestal is welded with the first pillar,
Horizontally disposed through-hole is offered in the middle part of first pillar, and is socketed with bearing in through-hole, the inner wall of bearing, which is socketed with, to be turned
Lever, the rotating bar have been screwed sucker far from one end of the first pillar, and the top side of the pedestal passes through spiral shell
Silk is fixed with servo motor, and the top outer wall other side of the pedestal offers the second motorized rails respectively and third is electronic leads
The middle of rail, the third motorized rails and the second motorized rails is perpendicular, and third motorized rails and the second motorized rails
It is connected, the inside of second motorized rails is inlaid with the second sliding block, and the top of second sliding block, which is welded with, to be vertically arranged
The second pillar, second pillar offers the first motorized rails, first motorized rails with respect to the side of the first pillar
Inside be inlaid with the first sliding block, first sliding block is screwed ion far from one end of the first motorized rails
Device, the ion generator are welded with ion gun head close to one end of sucker, and the bottom end of the ion generator is welded with electronic
Telescopic rod, the bottom end of the electric telescopic rod have been screwed horizontally disposed plummer, and one end welding of plummer
In the lateral wall of the second pillar.
Preferably, the rotating bar runs through the first pillar, and rotating bar passes through V band and servo close to one end of the first pillar
The output shaft of motor is sequentially connected.
Preferably, the servo motor is connected with switch by conducting wire, and switch is connected with controller, the model of controller
For DATA-7311.
Preferably, the height of height and sucker apart from pedestal apart from pedestal of the ion gun head matches.
Preferably, height of the length of first motorized rails less than the second pillar.
Preferably, the length and width of second motorized rails is respectively less than the length and width of pedestal, and third is electronic to be led
The length and width of rail is respectively less than the length and width of pedestal.
The invention has the benefit that this device structure is simple, in use, electronic being led by the second sliding block of control second
It is moved in rail and third motorized rails to adjust ion gun head to the horizontal position of substrate to be implanted, later in driving first
Sliding block moves up and down in the first motorized rails with this vertical position for adjusting ion gun head, is made by the drive of servo motor
Substrate to be implanted can firmly be adsorbed, the ion implanting operation of large area thus may be implemented, mention by rotating bar rotation, sucker
High efficiency reduces entire production cost.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the ion implantation device for chip proposed by the present invention；
Fig. 2 is a kind of partial structural diagram of the ion implantation device for chip proposed by the present invention.
In figure: 1 pedestal, 2 servo motors, 3 rotating bars, 4 first pillars, 5 suckers, 6 ion gun heads, 7 ion generators,
8 first sliding blocks, 9 first motorized rails, 10 electric telescopic rods, 11 second pillars, 12 plummers, 13 second sliding blocks, 14 second
Motorized rails, 15 third motorized rails.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
Referring to Fig.1-2, the top side of a kind of ion implantation device for chip, including pedestal 1, pedestal 1 is welded with
The middle part of first pillar 4, the first pillar 4 offers horizontally disposed through-hole, and bearing is socketed in through-hole, the inner wall sleeve of bearing
It is connected to rotating bar 3, rotating bar 3 has been screwed sucker 5 far from one end of the first pillar 4, and the top side of pedestal 1 passes through
Screw is fixed with servo motor 2, and the top outer wall other side of pedestal 1 offers the second motorized rails 14 respectively and third is electronic leads
The middle of rail 15, third motorized rails 15 and the second motorized rails 14 is perpendicular, and third motorized rails 15 and second are electronic
Guide rail 14 is connected, and the inside of the second motorized rails 14 is inlaid with the second sliding block 13, and the top of the second sliding block 13 is welded with vertically
The second pillar 11 being arranged, the side of opposite first pillar 4 of the second pillar 11 offer the first motorized rails 9, and first electronic leads
The inside of rail 9 is inlaid with the first sliding block 8, and the first sliding block 8 has been screwed ion hair far from one end of the first motorized rails 9
Raw device 7, ion generator 7 are welded with ion gun head 6 close to one end of sucker 5, and the bottom end of ion generator 7 is welded with electronic stretch
Contracting bar 10, the bottom end of electric telescopic rod 10 have been screwed horizontally disposed plummer 12, and one end weldering of plummer 12
Connect the lateral wall in the second pillar 11.
In the present invention, rotating bar 3 runs through the first pillar 4, and rotating bar 3 by V band and is watched close to one end of the first pillar 4
The output shaft transmission connection of motor 2 is taken, servo motor 2 is connected with switch by conducting wire, and switch is connected with controller, controller
Model DATA-7311, the height of height and sucker 5 apart from pedestal 1 apart from pedestal 1 of ion gun head 6 matches, first
For the length of motorized rails 9 less than the height of the second pillar 11, the length and width of the second motorized rails 14 is respectively less than the length of pedestal 1
Degree and width, the length and width of third motorized rails 15 are respectively less than the length and width of pedestal 1.
Working principle: in use, through the second sliding block 13 of control in the second motorized rails 14 and third motorized rails 15
It is moved to adjust ion gun head 6 to the horizontal position of substrate to be implanted, is driving the first sliding block 8 electronic to lead first later
It is moved up and down in rail 9 with this and adjusts the vertical position of ion gun head 6, rotate rotating bar 3 by the drive of servo motor 2,
Sucker 5 can firmly adsorb substrate to be implanted, and the ion implanting operation of large area thus may be implemented.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (6)
1. a kind of ion implantation device for chip, including pedestal (1), which is characterized in that the top side of the pedestal (1)
It is welded with the first pillar (4), offers horizontally disposed through-hole in the middle part of first pillar (4), and be socketed with axis in through-hole
It holds, the inner wall of bearing is socketed with rotating bar (3), and the rotating bar (3) has been screwed far from the one end of the first pillar (4)
The top side of sucker (5), the pedestal (1) has been screwed servo motor (2), the top outer wall of the pedestal (1)
The other side offers the second motorized rails (14) and third motorized rails (15), the third motorized rails (15) and second respectively
The middle of motorized rails (14) is perpendicular, and third motorized rails (15) are connected with the second motorized rails (14), and described
The inside of two motorized rails (14) is inlaid with the second sliding block (13), and the top of second sliding block (13), which is welded with, to be vertically arranged
Second pillar (11), second pillar (11) offers the first motorized rails (9) with respect to the side of the first pillar (4), described
The inside of first motorized rails (9) is inlaid with the first sliding block (8), and the one of first sliding block (8) separate first motorized rails (9)
End has been screwed ion generator (7), and the ion generator (7) is welded with ion gun close to the one end of sucker (5)
Head (6), the bottom end of the ion generator (7) are welded with electric telescopic rod (10), and the bottom end of the electric telescopic rod (10) is logical
It crosses screw to be fixed with horizontally disposed plummer (12), and one end of plummer (12) is welded on the outside of the second pillar (11)
Wall.
2. a kind of ion implantation device for chip according to claim 1, which is characterized in that the rotating bar (3)
Through the first pillar (4), and rotating bar (3) passes through the output shaft of V band and servo motor (2) close to the one end of the first pillar (4)
Transmission connection.
3. a kind of ion implantation device for chip according to claim 1, which is characterized in that the servo motor
(2) switch is connected with by conducting wire, and switch is connected with controller, the model DATA-7311 of controller.
4. a kind of ion implantation device for chip according to claim 1, which is characterized in that the ion gun head
(6) the height of height and sucker (5) apart from pedestal (1) apart from pedestal (1) matches.
5. a kind of ion implantation device for chip according to claim 1, which is characterized in that described first electronic leads
Height of the length of rail (9) less than the second pillar (11).
6. a kind of ion implantation device for chip according to claim 1, which is characterized in that described second electronic leads
The length and width of rail (14) is respectively less than the length and width of pedestal (1), and the length and width of third motorized rails (15) is small
Length and width in pedestal (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710571769.2A CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710571769.2A CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107346723A CN107346723A (en) | 2017-11-14 |
| CN107346723B true CN107346723B (en) | 2019-02-19 |
Family
ID=60257784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710571769.2A Active CN107346723B (en) | 2017-07-13 | 2017-07-13 | A kind of ion implantation device for chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107346723B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464536B (en) * | 2022-02-17 | 2022-10-11 | 厦门中能微电子有限公司 | Groove MOSFET optimization process for integrated ESD diode |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0973873A (en) * | 1995-09-05 | 1997-03-18 | Nissin Electric Co Ltd | Holder drive |
| US5731592A (en) * | 1995-12-29 | 1998-03-24 | Samsung Electronics Co., Ltd. | Exhaust system for an ion implanter |
| KR20020080921A (en) * | 2001-04-18 | 2002-10-26 | 삼성전자 주식회사 | beam gate functioning equipment of semiconductor device ion implanter |
| JP2008059994A (en) * | 2006-09-01 | 2008-03-13 | Nissin Ion Equipment Co Ltd | Ion beam irradiation apparatus and ion beam irradiation method |
| CN103237918A (en) * | 2010-11-30 | 2013-08-07 | 德国罗特·劳股份有限公司 | Method and device for ion implantation |
| CN104576275A (en) * | 2013-10-24 | 2015-04-29 | 北京中科信电子装备有限公司 | Uniformity correction control system for ion implanter |
| CN104988468A (en) * | 2015-07-27 | 2015-10-21 | 哈尔滨工业大学 | Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device |
| CN105206493A (en) * | 2014-06-17 | 2015-12-30 | 住友重机械离子技术有限公司 | Ion implantation apparatus and control method for ion implantation apparatus |
-
2017
- 2017-07-13 CN CN201710571769.2A patent/CN107346723B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0973873A (en) * | 1995-09-05 | 1997-03-18 | Nissin Electric Co Ltd | Holder drive |
| US5731592A (en) * | 1995-12-29 | 1998-03-24 | Samsung Electronics Co., Ltd. | Exhaust system for an ion implanter |
| KR20020080921A (en) * | 2001-04-18 | 2002-10-26 | 삼성전자 주식회사 | beam gate functioning equipment of semiconductor device ion implanter |
| JP2008059994A (en) * | 2006-09-01 | 2008-03-13 | Nissin Ion Equipment Co Ltd | Ion beam irradiation apparatus and ion beam irradiation method |
| CN103237918A (en) * | 2010-11-30 | 2013-08-07 | 德国罗特·劳股份有限公司 | Method and device for ion implantation |
| CN104576275A (en) * | 2013-10-24 | 2015-04-29 | 北京中科信电子装备有限公司 | Uniformity correction control system for ion implanter |
| CN105206493A (en) * | 2014-06-17 | 2015-12-30 | 住友重机械离子技术有限公司 | Ion implantation apparatus and control method for ion implantation apparatus |
| CN104988468A (en) * | 2015-07-27 | 2015-10-21 | 哈尔滨工业大学 | Device for injection and deposition of metal plasma immersion ions on insulating material and injecting and depositing method using device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107346723A (en) | 2017-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107346723B (en) | A kind of ion implantation device for chip | |
| CN207288945U (en) | Mechanical arm | |
| CN113541421A (en) | Special machine tool for motor housing mechanism convenient for loading and unloading | |
| CN108461422A (en) | A kind of integrated chip package equipment | |
| CN104647302A (en) | Lifting punching machine convenient for punching high part | |
| CN203293215U (en) | Mechanical overhanging arm with universal shafts | |
| CN107416526A (en) | It is a kind of to carry boosting manipulator around glass processing platform | |
| CN108590508B (en) | It is a kind of for build monitoring drilling device | |
| CN108788421A (en) | A kind of grasping mechanism of high-precision dot welding machine | |
| CN108655554A (en) | A kind of feed mechanism of high-precision dot welding machine | |
| CN108788422A (en) | A kind of cleaning mechanism of high-precision dot welding machine | |
| CN102539853B (en) | Adjustable and controllable electric arc generation device | |
| CN105375704B (en) | A kind of automatic coil winding machine winding mechanism | |
| CN208853815U (en) | A kind of copper bar slitting equipment of view-based access control model detection technique | |
| CN107297532A (en) | A kind of CNC milling machine cross slide way chip automatic clearing mechanism | |
| CN206811549U (en) | A kind of clamping tool for machine work | |
| CN210480675U (en) | Glass edging and feeding and discharging device | |
| CN204949963U (en) | Electric lift table's elevating system | |
| CN212411882U (en) | Accurate positioning mechanism for riveting point of silver contact | |
| CN208825243U (en) | A kind of bending machine high-precision rear material stopping device of multiaxis positioning | |
| CN210360392U (en) | Gear shaft production and processing device | |
| CN106653546A (en) | Extraction electrode driving device | |
| CN107101272B (en) | Cabinet air conditioner with displacement function and capable of automatically cleaning foreign book wall surface | |
| CN203009362U (en) | 360 DEG slow rotation segmentation circuit closer of electric fan | |
| CN105262267B (en) | Mobile device for direct current generator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |