CN112217492A - SAW filter - Google Patents
SAW filter Download PDFInfo
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- CN112217492A CN112217492A CN201910627871.9A CN201910627871A CN112217492A CN 112217492 A CN112217492 A CN 112217492A CN 201910627871 A CN201910627871 A CN 201910627871A CN 112217492 A CN112217492 A CN 112217492A
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- substrate
- saw filter
- piezoelectric layer
- alloy
- simple substance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention provides a SAW filter, and relates to the technical field of electricity. The SAW filter provided by the invention comprises a substrate; a piezoelectric layer on a first side of the substrate; at least one IDT electrode, wherein the IDT electrode is positioned on one surface of the piezoelectric layer far away from the substrate, and the IDT electrode is a low-melting-point metal electrode; the low-melting-point metal in the low-melting-point metal electrode is a simple metal substance with a melting point below 300 ℃, an alloy, a mixture of the simple metal substance and the alloy, or a curable conductive fluid taking the simple metal substance and/or the alloy as a main component. The technical scheme of the invention can simplify the manufacturing method of the SAW filter and reduce the manufacturing cost of the SAW filter.
Description
Technical Field
The invention relates to the technical field of electricity, in particular to a SAW filter.
Background
A Surface Acoustic Wave (SAW) is an elastic Wave propagating along a first Surface of an object, and the SAW technology is widely applied in the fields of radar, optical Wave television and the like. As mobile communication technology is rapidly developed, the demand for filters based on the SAW technology, i.e., SAW filters, is rapidly increasing.
The SAW filter includes an interdigital transducer including a piezoelectric substrate and interdigital electrodes, i.e., IDT electrodes, which are located on the piezoelectric substrate. The manufacture of the SAW filter follows the planar manufacturing technology of large-scale integrated circuits, the process procedures of the SAW filter comprise cleaning, film coating, masking, photoetching, etching, stripping and the like, the manufacturing method is complex, and the manufacturing cost is high.
Disclosure of Invention
The invention provides a SAW filter, which can simplify the manufacturing method of the SAW filter and reduce the manufacturing cost of the SAW filter.
The invention provides a SAW filter, which adopts the following technical scheme:
the SAW filter includes;
a substrate;
a piezoelectric layer on a first side of the substrate;
at least one IDT electrode, wherein the IDT electrode is positioned on one surface of the piezoelectric layer far away from the substrate, and the IDT electrode is a low-melting-point metal electrode;
the low-melting-point metal in the low-melting-point metal electrode is a simple metal substance with a melting point below 300 ℃, an alloy, a mixture of the simple metal substance and the alloy, or a curable conductive fluid taking the simple metal substance and/or the alloy as a main component.
Alternatively, the IDT electrode is made of a low-melting metal by one or more of screen printing, transfer printing, gravure printing, letterpress printing, and flexography printing.
Optionally, the metal simple substance with the melting point below 300 ℃ is one of a gallium simple substance, an indium simple substance, a tin simple substance, a sodium simple substance, a potassium simple substance, a rubidium simple substance, a cesium simple substance, a zinc simple substance and a bismuth simple substance;
the alloy with the melting point below 300 ℃ is one or more of gallium indium alloy, gallium indium tin alloy, gallium zinc alloy, gallium indium zinc alloy, gallium tin zinc alloy, gallium indium tin zinc alloy, bismuth indium alloy, bismuth tin alloy, bismuth indium zinc alloy, bismuth tin zinc alloy and bismuth indium tin zinc alloy.
Optionally, a side of the piezoelectric layer away from the substrate is non-planar.
Optionally, the first side of the substrate is planar and the piezoelectric layer has at least two portions of different thickness.
Optionally, the first side of the substrate is non-planar and the piezoelectric layer has at least two portions of different thickness.
Optionally, the first surface of the substrate is a non-planar surface, a shape of a surface of the piezoelectric layer away from the substrate is the same as the shape of the first surface of the substrate, and the thickness of the piezoelectric layer is uniform.
Further, the substrate is obtained by deforming a flexible substrate with a uniform thickness, and the piezoelectric layer is located in a deformed area of the substrate.
Optionally, one surface of the piezoelectric layer, which is away from the substrate, includes one or more of a folding surface, a cylindrical surface, a conical surface, an elliptic cylindrical surface, an elliptic conical surface, a hyperbolic paraboloid, a conical surface, a cylindrical surface, a spherical surface, or an annular surface.
Optionally, the SAW filter includes a plurality of IDT electrodes, and a filter frequency band corresponding to each IDT electrode is different.
Further, one or more of the finger width, finger pitch, and finger pair number of each IDT electrode are different.
The invention provides the SAW filter with the structure, because the IDT electrode included in the SAW filter is a low-melting-point metal electrode, the low-melting-point metal in the low-melting-point metal electrode is a simple metal with the melting point below 300 ℃, an alloy, a mixture of the simple metal and the alloy, or a curable conductive fluid taking the simple metal and/or the alloy as the main component, after the low-melting-point metal is melted, the IDT electrode can be manufactured on the piezoelectric layer through the processes of printing, spraying, transfer printing, silk-screen printing, steel mesh printing, pad printing, intaglio printing, relief printing, flexographic printing and the like, and the manufacturing process is not influenced by the surface shape of the piezoelectric layer, so that the manufacturing method of the SAW filter can be simplified, and the manufacturing cost of the SAW filter can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a top view of a SAW filter according to an embodiment of the present invention;
FIG. 2 is a first cross-sectional view along AA' of FIG. 1 according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view along AA' of FIG. 1 according to an embodiment of the present invention;
fig. 4 is a first schematic structural diagram of a substrate and a piezoelectric layer according to an embodiment of the present invention;
fig. 5 is a second schematic structural diagram of a substrate and a piezoelectric layer according to an embodiment of the present invention;
fig. 6 is a third schematic structural diagram of the substrate and the piezoelectric layer according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the technical features in the embodiments of the present invention may be combined with each other without conflict.
An embodiment of the present invention provides a SAW filter, and specifically, as shown in fig. 1, fig. 2 and fig. 3, fig. 1 is a top view of the SAW filter provided by the embodiment of the present invention, and fig. 2 and fig. 3 are schematic first and second cross-sectional views along AA' direction of fig. 1 provided by the embodiment of the present invention, respectively, the SAW filter includes;
a substrate 1;
a piezoelectric layer 2, the piezoelectric layer 2 being located on a first face of the substrate 1;
at least one IDT electrode 3, the IDT electrode 3 is positioned on one side of the piezoelectric layer 2 far away from the substrate 1, and the IDT electrode 3 is a low-melting-point metal electrode;
the low-melting-point metal in the low-melting-point metal electrode is a simple metal with a melting point below 300 ℃, an alloy, a mixture of the simple metal and the alloy, or a curable conductive fluid taking the simple metal and/or the alloy as a main component.
The IDT electrode 3 included in the SAW filter is a low-melting-point metal electrode, the low-melting-point metal in the low-melting-point metal electrode is a simple metal with a melting point below 300 ℃, an alloy, a mixture of the simple metal and the alloy, or a curable conductive fluid with the simple metal and/or the alloy as a main component, the IDT electrode 3 can be manufactured on the piezoelectric layer 2 by printing, spraying, transfer printing, screen printing, steel mesh printing, pad printing, gravure printing, letterpress printing, flexography and other processes after the low-melting-point metal is melted, and the manufacturing process is not influenced by the surface shape of the piezoelectric layer 2, so that the manufacturing method of the SAW filter can be simplified, and the manufacturing cost of the SAW filter is reduced.
In the filtering process of the SAW filter, an electric signal is input from the IDT electrode 3, the piezoelectric layer 3 converts the electric signal into an acoustic wave, the acoustic wave propagates along the surface of the piezoelectric layer 3, and then the acoustic wave is received by the IDT electrode and converted into an electric signal to be output. After the SAW filter is applied to a mobile phone circuit, the SAW filter can be used for outputting signals of certain specific frequency bands or not, so that disordered signals are filtered, and signals of a required frequency band are output.
The main factors affecting the filter characteristics of the SAW filter include the material of the piezoelectric layer 2, the cutting angle, and the shape of the DIT electrode 3.
The velocity of the acoustic wave formed on the surface of the piezoelectric layer 3 is basically determined by the material of the piezoelectric layer 3 and the cutting angle, and the cutting angle of the piezoelectric layer 3 affects the propagation direction of the acoustic wave, thereby changing the propagation characteristics of the acoustic wave (the propagation characteristics include the propagation velocity, the electromechanical coupling coefficient, the TCD (delay time temperature coefficient), and the like), and the propagation velocity determines the pitch range required to reach the frequency required by the device when the comb-shaped electrode is formed. The electromechanical coupling coefficient is related to the bandwidth of the pass band obtained by the SAW filter or the like when the electrodes are formed. TCD is related to the frequency variation range of the SAW filter and the like in the use temperature environment. The choice of the circuit board, its cutting angle and propagation direction should be determined according to the frequency characteristics required by the device.
The surface of the piezoelectric layer 2 far away from the substrate 1 is non-planar, and therefore the surface has areas with different cutting angles, further the propagation of the acoustic wave is affected, different filtering effects are obtained, like a SAW filter, signals of a plurality of interval frequency bands can pass through, or signals of a plurality of interval frequency bands do not pass through, one SAW filter can play the role of a plurality of SAW filters through the design of the shape of the surface of the piezoelectric layer 2 far away from the substrate 1, the occupied area of the SAW filter in an integrated circuit is reduced, and the integration level of the integrated circuit is improved.
The DIT electrode 3 mainly includes four structural parameters, which are: the number of pairs of fingers, finger width, finger spacing, and thickness. By changing the shape of the IDT electrode 3, that is, by changing any of the above structural parameters, the frequency of the excitation sound wave can be changed. When the surface acoustic wave reaches the IDT electrode 3, if the surface acoustic wave conforms to the shape (e.g., finger pitch) of the IDT electrode 3, an electric signal is generated in the IDT electrode 3.
In the embodiment of the present invention, the DIT electrode 3 is located on the surface of the piezoelectric layer 2 away from the substrate 1, and the surface is non-planar, and the shape of the DIT electrode 3 is also affected by the shape of the surface of the piezoelectric layer 2 away from the substrate 1, so that the design of the structural parameters of the IDT electrode 3 is more varied, and the SAW filter can meet different application requirements (such as requirements for filtering effect, shape, or mounting position, etc.), and the application range is wider.
Optionally, as shown in fig. 2 to 6, fig. 4 to 6 are schematic structural diagrams of a substrate and a piezoelectric layer provided in an embodiment of the present invention, in the embodiment of the present invention, a surface of the piezoelectric layer 2 away from the substrate 1 is a non-planar surface, so that shape design of the piezoelectric layer 2 is more varied, and the IDT electrode 3 is located on a surface of the piezoelectric layer 2 away from the substrate 1, that is, the IDT electrode 3 is located on the non-planar surface of the piezoelectric layer 2, so that parameter design of the IDT electrode 3 is more varied, and the SAW filter can meet different application requirements (such as requirements for filtering effect, shape, or mounting position, etc.), and the application range is wider.
Note that, previously, only "the surface of the piezoelectric layer 2 away from the substrate 1 is non-planar" is limited, and the first surface of the substrate 1 (the surface for manufacturing the piezoelectric layer 2) is not limited to be planar or non-planar, and the surface of the piezoelectric layer 2 contacting the substrate 1 is not limited to be planar or non-planar.
In one example, as shown in fig. 2 and 3, the first surface of the substrate 1 is a flat surface, and in this case, the surface of the piezoelectric layer 2 formed thereon, which is in contact with the substrate 1, is inevitably also a flat surface.
Since the side of the piezoelectric layer 2 remote from the substrate 1 is non-planar, the piezoelectric layer 2 may have at least two portions of different thickness, in the example shown in fig. 3 the thickness of the piezoelectric layer 2 gradually increasing in the left to right direction, in the example shown in fig. 2 the piezoelectric layer comprises three portions of different thickness. Those skilled in the art can set this according to the target shape and performance of the SAW filter, and this is not limited herein.
In yet another example, as shown in fig. 4 and 5, the first surface of the substrate 1 is non-planar, and in this case, the surface of the piezoelectric layer 2 formed thereon contacting the substrate 1 is necessarily non-planar.
When the face of the piezoelectric layer 2 remote from the substrate 1 is non-planar and has a different shape from the first face of the substrate 1 as shown in fig. 4, the piezoelectric layer 2 has at least two portions of different thickness. When the shape of the face of the piezoelectric layer 2 remote from the substrate 1 is the same as the shape of the first face of the substrate 1 as shown in fig. 5, the thickness of the piezoelectric layer 2 is uniform.
Alternatively, as shown in fig. 6, the substrate 1 is formed by deforming a flexible substrate having a uniform thickness, and the piezoelectric layer 2 is located in the region where the substrate 1 is deformed. The substrate 1 may be any flexible substrate that can adhere to low melting point metal and has a certain supporting force, such as PET, PVC, PI, etc.
This deformation may occur before the piezoelectric layer 2 is formed, or after the piezoelectric layer 2 is formed on the substrate 1, or the piezoelectric layer 2 may be formed on the substrate 1, and the substrate 1 may be deformed according to actual needs (e.g., a mounting position). In addition, when the melting point of the selected low melting point metal is lower than room temperature, the low melting point metal has better flexibility, and even after the IDT electrode 3 is manufactured on the piezoelectric layer 2, the substrate 1 can be deformed, so that the IDT electrode 3 is not damaged.
Those skilled in the art can set this according to the target shape and performance of the SAW filter, and this is not limited herein.
Optionally, a surface of the piezoelectric layer 2 away from the substrate 1 includes one or more of a folding surface, a cylindrical surface, a conical surface, an elliptic cylindrical surface, an elliptic conical surface, a hyperbolic paraboloid, a conical surface, a cylindrical surface, a spherical surface, or a toroidal surface. Of course, the side of the piezoelectric layer 2 facing away from the substrate 1 can also comprise one or more flat surfaces on this basis. Those skilled in the art can set this according to the target shape and performance of the SAW filter, and this is not limited herein.
Alternatively, the SAW filter includes a plurality of IDT electrodes 3, and the filter frequency band corresponding to each IDT electrode 3 is different, so that the SAW filter has a wider application range.
Further, one or more of the width, the pitch, and the number of pairs of the IDTs 3 may be different from each other, and specifically, the shape of the IDT 3 and/or the shape of the piezoelectric layer 2 on the side away from the substrate 1 may be designed.
In addition, in the embodiment of the present invention, the IDT electrode is formed by using a low melting point metal by one or more of screen printing, steel screen printing, transfer printing, gravure printing, letterpress printing, and flexography.
Low melting point metals in embodiments of the present invention may include one or more of gallium, indium, tin, zinc, bismuth, lead, cadmium, mercury, silver, copper, sodium, potassium, magnesium, aluminum, iron, nickel, cobalt, manganese, titanium, vanadium, boron, carbon, silicon, ruthenium, rhodium, palladium, osmium, iridium, platinum, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, yttrium, scandium, and the like.
Optionally, the metal simple substance with the melting point below 300 ℃ in the embodiment of the invention is one of a gallium simple substance, an indium simple substance, a tin simple substance, a sodium simple substance, a potassium simple substance, a rubidium simple substance, a cesium simple substance, a zinc simple substance, and a bismuth simple substance.
Optionally, the alloy with the melting point below 300 ℃ is one or more of gallium-indium alloy, gallium-indium-tin alloy, gallium-zinc alloy, gallium-indium-zinc alloy, gallium-tin-zinc alloy, gallium-indium-tin-zinc alloy, bismuth-indium alloy, bismuth-tin alloy, bismuth-indium-zinc alloy, bismuth-tin-zinc alloy and bismuth-indium-tin-zinc alloy.
Alternatively, the curable conductive fluid containing the above simple metal substance and/or alloy as a main component may include one or more of a non-metal filler, a resin, a solvent, an auxiliary agent, and the like, in addition to the above simple metal substance and/or alloy.
Optionally, the piezoelectric layer 2 is a quartz layer, a lithium niobate layer, or a lithium tantalate layer.
The SAW filter provided by the embodiment of the invention can be applied to communication devices such as mobile phones.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A SAW filter, comprising;
a substrate;
a piezoelectric layer on a first side of the substrate;
at least one IDT electrode, wherein the IDT electrode is positioned on one surface of the piezoelectric layer far away from the substrate, and the IDT electrode is a low-melting-point metal electrode;
the low-melting-point metal in the low-melting-point metal electrode is a simple metal substance with a melting point below 300 ℃, an alloy, a mixture of the simple metal substance and the alloy, or a curable conductive fluid taking the simple metal substance and/or the alloy as a main component.
2. The SAW filter according to claim 1, wherein the IDT electrode is made of a low melting point metal by one or more of screen printing, pad printing, gravure printing, letterpress printing, and flexography printing.
3. The SAW filter according to claim 1, wherein the metal simple substance having a melting point of 300 ℃ or lower is one of a simple substance of gallium, a simple substance of indium, a simple substance of tin, a simple substance of sodium, a simple substance of potassium, a simple substance of rubidium, a simple substance of cesium, a simple substance of zinc, and a simple substance of bismuth;
the alloy with the melting point below 300 ℃ is one or more of gallium indium alloy, gallium indium tin alloy, gallium zinc alloy, gallium indium zinc alloy, gallium tin zinc alloy, gallium indium tin zinc alloy, bismuth indium alloy, bismuth tin alloy, bismuth indium zinc alloy, bismuth tin zinc alloy and bismuth indium tin zinc alloy.
4. A SAW filter as claimed in any one of claims 1 to 3, wherein the face of the piezoelectric layer remote from the substrate is non-planar.
5. A SAW filter as claimed in claim 4, wherein the first face of the substrate is planar and the piezoelectric layer has at least two portions of different thickness.
6. A SAW filter as claimed in claim 4, wherein the first face of the substrate is non-planar and the piezoelectric layer has at least two portions of different thickness.
7. A SAW filter as claimed in claim 4, wherein the first face of the substrate is non-planar, the face of the piezoelectric layer remote from the substrate is of the same shape as the first face of the substrate, and the piezoelectric layer is of uniform thickness.
8. A SAW filter as claimed in claim 7, wherein said substrate is deformed from a flexible substrate of uniform thickness, said piezoelectric layer being located in the region of deformation of said substrate.
9. A SAW filter as claimed in claim 4, wherein the side of the piezoelectric layer remote from the substrate comprises one or more of a folded surface, a cylindrical surface, a conical surface, an elliptic cylindrical surface, an elliptic conical surface, a hyperbolic paraboloid, a conical surface, a cylindrical surface, a spherical surface or an annular surface.
10. A SAW filter as claimed in any one of claims 1 to 3, wherein said SAW filter includes a plurality of IDT electrodes, and the filter frequency band of each of said IDT electrodes is different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910627871.9A CN112217492A (en) | 2019-07-12 | 2019-07-12 | SAW filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910627871.9A CN112217492A (en) | 2019-07-12 | 2019-07-12 | SAW filter |
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| KR20050072576A (en) * | 2004-01-07 | 2005-07-12 | 엘지전자 주식회사 | Thin film bulk acoustic resonator filter and manufacturing method thereof |
| JP2006001755A (en) * | 2004-06-15 | 2006-01-05 | Hitachi Metals Ltd | High strength low temperature-firing ceramic composition and laminated electronic component using the same |
| US20070247782A1 (en) * | 2006-04-19 | 2007-10-25 | Ngk Insulators, Ltd. | Dielectric device |
| JP2010103621A (en) * | 2008-10-21 | 2010-05-06 | Murata Mfg Co Ltd | Elastic wave apparatus |
| CN104980117A (en) * | 2015-06-15 | 2015-10-14 | 电子科技大学 | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
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2019
- 2019-07-12 CN CN201910627871.9A patent/CN112217492A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050072576A (en) * | 2004-01-07 | 2005-07-12 | 엘지전자 주식회사 | Thin film bulk acoustic resonator filter and manufacturing method thereof |
| JP2006001755A (en) * | 2004-06-15 | 2006-01-05 | Hitachi Metals Ltd | High strength low temperature-firing ceramic composition and laminated electronic component using the same |
| US20070247782A1 (en) * | 2006-04-19 | 2007-10-25 | Ngk Insulators, Ltd. | Dielectric device |
| JP2010103621A (en) * | 2008-10-21 | 2010-05-06 | Murata Mfg Co Ltd | Elastic wave apparatus |
| CN104980117A (en) * | 2015-06-15 | 2015-10-14 | 电子科技大学 | Flexible surface acoustic wave device resistant to high temperature and manufacturing method thereof |
| CN107342748A (en) * | 2017-07-04 | 2017-11-10 | 浙江大学 | A kind of bulk acoustic wave resonator of based single crystal piezoelectric membrane and preparation method thereof |
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