1364225 --- 101年.03月12日修正替換頁 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係關於-種表面聲波元件及其製作方法，尤其係 關於-種具有較小插入損耗之表面聲波元件及其製作方 法。 [0002] 【先前技術】 表面聲波元件係利用於一蒱 搜彈性固體表面上傳播之波， 來進行電訊號處理。典型夕▲ ^ •^之表面聲波元件係利用一個換 能器，將以光速傳播之雷进 电Μ訊號波轉換成比光速慢之聲 頻訊號波。這種顯著之波1^ 久長减小可使設計人員於比傳統 之電路設計所需空間小得玄+ w夕之空間内，實施一些複雜之 訊號處理功能。採用了弁 尤進微電子加工技術製造之表面 聲波τς件具有體積小、重量輕可靠性高一致性好 以及夕功π等優點’在通訊、電視、遙控和報警等系統 中已得到廣泛應用’例如用於濾波器、諸振器、振蕩器 、延時線及其他類似之裝置巾，數以億計之行動電話和 f視機中都應用了多個表面聲波滤波器。隨著加工工藝 之飛速發展，表面聲波元件已成為現代資訊産業不可或 缺之關鍵元器件之一。 [0003] 一種習知表面聲波元件包括二換能器、反射器及一壓電 基片，該二換能器及反射器係製作於壓電基片上，採用微 電子工藝技術製作又指換能器和反射器等，利用基片材 料之壓電效應，通過輸入叉指換能器（Inter Digital Transducer, IDT)將電訊號轉換成聲訊號，並局限在 基片表面傳播，輸出叉指換能器將聲訊號恢復成電訊號 09413103#單編號 A0101 1013090155-0 第3頁/共13頁 1364225 101年03月12日梭正替換頁 ，實現電-聲-電之變換過程，完成電訊號處理過程，獲 得各種用途之電子器件。反射器之作用係將換能器終端 損失之能量反射回換能器中。壓電基片上之叉指換能器 之幾何尺寸，例如又指之條高、節距及數目，對於一個 表面聲波元件之訊號處理及頻率響應特性起重要作用。 表面聲波元件之設計者通常在表面聲波元件達到工作所 需之頻率響應時，把注意力集中於表面聲波元件之幾何 尺寸及壓電基片所使用材料之選蘀上。然，習知之具有 叉指換能器之表面聲波元件，其電極為均勻重疊電極， 此設計並不能有效地降低表面聲波元件之插入損耗。 【發明内容】 [0004] 有鑑於此，有必要提供一種具有較低插入損耗及設計自 由度較高之表面聲波元件。 [0005] 另，有必要提供一種製作具有較低插入損耗及設計自由 度較高之表面聲波元件之方法。 [0006] —種表面聲波元件，其包括一壓電基板，一第一換能器 及一第二換能器，該第一換能器與該第二換能器設於該 壓電基板上，且該第一換能器與該第二換能器聲耦合； 其中，至少一換能器包括一第一電極母條及一第二電極 母條，該第一電極母條及第二電極母條分別設有二電極 ，該第一電極母條之二電極分別與該第二電極母條之二 電極相配合圍成螺旋狀。 [0007] 一種表面聲波元件製作方法，包括以下步驟：提供一基 片；於該基片之表面濺鍍一壓電薄膜層；於該壓電薄膜 層表面塗敷一層光阻層；將一光罩罩於該光阻層表面； 1013090155-0 09413103#單编號A〇101 第4頁/共13頁 1364225 __ ιοί年.03$ 12日修正替換頁 用光照射該光罩，於該光阻表面形成一曝光區；取下該 光罩後，去除該曝光區之曝光光阻，露出部份壓電薄膜 層，該露出之部份壓電薄膜層為螺旋狀；於剩餘光阻及 路出之。卩伤壓電薄膜層表面錄一層導電金屬膜；及洗去 該剩餘光阻及附著於其上之導電金屬膜層。 _相較習知技術，所述表面聲波it件之電極交互圍繞成一 螺旋狀’因而其重疊長度長，可有效降低插入損耗。另 ，所述螺旋狀之電極之長短、寬度及間距等參數，可在 設計上不斷變化，從而控制表面聲波元件之插入損耗、 頻寬及表面聲波速度等參數，從而提高表面聲波元件及 其應用糸統之設計自由度。 【實施方式】 ]本發明較佳實施例公開了一種表面聲波元件卜請參閱第 一圖所不，該表面聲波元件1包括基片10、壓電薄膜層20 第換胃匕器30及第二換能器40.。該壓電薄膜層2〇、第 —換能器30及第二換能器4〇設於基片1〇上，且第一換能 器30與第二換能器4〇聲賴合。 [0010] 基片1G為一長方形薄板係由梦材料製成。壓電薄膜層 2〇形成於基片1〇之上表面，壓電薄膜層2〇係由氧化鋅 (ΖηΟχ)、鈮酸鋰（LiNb〇x)、鈦酸鋰（UTi〇x)或鈕酸鋰 (LiTaOx)等材料製成。 [0011] 第一換能器30及第二換能器4〇並排設於壓電薄膜層2〇之 上表面。第一換能器3〇具有一第一電極母條32及一第二 電極母條34，第一電極母條32及第二電極母條34平行設 m 置。第一電極母條32上連接有一第一電極321、一第二電 09413103#單編號A01〇l 第5頁/共13頁 ' 1013090155-0 1364225 _ 101年.03月12日接正替換頁 極323及-電訊號輸入端36，第二電極母條34上連接有一 第三電極34卜-第四電極343及一接地端^。四電極之 材料可為金、銀、銅紐。第_電極321與第三電極Μ 相對設置，並相互配合圍成螺旋狀，第二電極323與第四 電極343相對設置，並相互配合圍成螺旋狀，其中，每一 組螺旋狀電極之相鄰兩同性電極之間距較佳為 一個表面 聲波波長，相鄰兩異性電極之間距較佳為半個表面聲波 波長。電訊號輸人端36用於接收第—換能㈣外部之電 訊號’接地端38用於將第-換能㈣接地。 [0012] 第二換能器40具有一第二雷柘再政 负乐一冤極母條42及一第四電極母條 44，第三電極母條42及第四電極母條44平行設置。第三 電極母條42上連接有-第五電極421、—第六電極⑵及 -電訊號輸出端46,第四電極母條44上連接有一第七電 極441、一第八電極443及—接地端48。四電極之材料可 為金 '銀、銅或鋁。第五電極421與第七電極441相對設 置，並相互配合圍成螺旋狀’第六電極423與第八電極 443相對设置，並相互配合圍成螺旋狀，其中，每一組螺 旋狀電極之相鄰兩同性電極之間距較佳為一個表面聲波 波長，相鄰兩異性電極之間距較佳為半個表面聲波波長 。電訊號輪出端46用於將第二換能器4〇之電訊號輸出， 接地端48用於將第二換能器4〇接地。 [0013]表面聲波元件1工作時，第一換能器30之電訊號輸入端36 接收外部之電訊號，由於壓電薄膜層2〇具有壓電特性， 第一換能器30之螺旋狀電極將接收之電訊號轉換成表面 聲波，該表面聲波沿著壓電薄膜層2〇傳播至第二換能器 1013090155-0 09413103#單编號A01〇l 第δ頁/共13頁 1.364225 101年.03月12日梭正替換頁 40，第二換能器40之螺旋狀電極將表面聲波轉換成電訊 號，由第二換能器40之電訊號輸出端46輸出。 [0014] 本發明較佳實施例公開之表面聲波元件之電極交互圍繞 成一螺旋狀，因而其重疊長度長，可有效降低插入損耗 。另，本表面聲波元件螺旋狀之電極之長短、寬度及間 距等參數，可在設計上不斷變化，從而控制表面聲波元 件之插入損耗、頻寬及表面聲波速度等參數，從而提高 表面聲波元件及其應用系統之設計自由度。 [0015] ,請參閱第二圖，該表面聲波元件1之製作方法包括以下步 驟： [0016] 首先提供一矽基片10 ;然後將該矽基片10置於真空腔内 ，以氧化鋅'（ZnOx)、銳酸裡（LiNbOx)、鈦酸裡 (LiTiOx)或组酸链（LiTaOx)為滅鐘乾材，以氬氣（Ar) 與氧氣為濺鍍氣體，於該矽基片10之表面濺鍍一壓電薄 膜層20，滅鐘方法可為反應性直流滅鑛（DC reactive sputtering)或反應性射頻減:鍍（RF reactive sputtering);於Μ電薄膜層20表面塗敷一層光阻層50 ;然後將一光罩（圖未示）箪於該光阻層50表面；用雷射 光或紫外光照射該光罩，於光阻表面形成一曝光區；取 下光罩後，將曝光之光阻層50置於顯影液内，去除曝光 區之曝光光阻501，露出部份壓電薄膜層201 ;接著利用 濺鍍法於剩餘光阻及露出之部份壓電薄膜層201表面鍍一 層導電金屬膜60，該金屬可為金、銀、銅或鋁；洗去剩 餘光阻及附著於其上之金屬膜層601，則剩餘之金屬膜層 即為第一換能器30及第二換能器40之電極，該第一換能 Q94131Q3产單編號Α0101 第7頁/共13頁 1013090155-0 1364225 __ 101年.03月12日核正替换頁 器30之四個電極兩兩相互並列圍成螺旋狀，該第二換能 器40之四個電極兩兩相互並列圍成螺旋狀，此時便已製 得所述之表面聲波元件1。 [0017] 綜上所述，本發明符合發明專利要件，爰依法提出專利 申請。惟，以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在援依本案發明精神所作之等效 · 修飾或變化，皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 [0018] 第一圖係本發明較佳實施例之表面聲波元件之立體結構 不意圖， [0019] 第二圖係本發明較佳實施例之表面聲波元件之製作流程 示意圖。 【主要元件符號說明】 [0020] 表面聲波元件：1 [0021] 壓電薄膜層：20 [0022] 第一電極母條：32 [0023] 電訊號輸入端：36 [0024] 第二換能器：40 [0025] 第四電極母條：44 [0026] 接地端：48 [0027] 金屬膜：60 [0028] 基片：10 09413103#單编號 A〇101 第8頁/共13頁 1013090155-0 1364225 [0029] 第一換能器： 30 [0030] 第二電極母條 ：34 [0031] 接地端：38 [0032] 第三電極母條 ：42 [0033] 電訊號輸出端 ：46 [0034] 光阻層：50 09413103^^^ A〇101 第9頁/共13頁 101年.03月12日修正替換頁 1013090155-01364225 --- 101 years. March 12th, revised replacement page 6. Description of the invention: [Technical field of the invention] [0001] The present invention relates to a surface acoustic wave element and a method for fabricating the same, and in particular, Surface acoustic wave component with small insertion loss and its manufacturing method. [Prior Art] A surface acoustic wave element is used for performing a signal processing by searching a wave propagating on an elastic solid surface. The typical acoustic wave ▲ ^ ^ ^ surface acoustic wave component uses a transducer to convert the lightning-inducing signal wave propagating at the speed of light into an acoustic signal wave that is slower than the speed of light. This significant wave length reduction of 1^ allows the designer to implement some complex signal processing functions in a space that is smaller than the space required for conventional circuit design. The surface acoustic wave τς manufactured by 弁尤进microelectronics processing technology has the advantages of small size, light weight, high reliability, good consistency, and qigong π, which have been widely used in communication, television, remote control and alarm systems. For example, for filters, vibrators, oscillators, delay lines, and other similar device wipers, multiple surface acoustic wave filters are used in hundreds of millions of mobile phones and video cameras. With the rapid development of processing technology, surface acoustic wave components have become one of the key components of the modern information industry. [0003] A conventional surface acoustic wave device includes two transducers, a reflector, and a piezoelectric substrate. The two transducers and reflectors are fabricated on a piezoelectric substrate, and are fabricated by microelectronic technology. And reflectors, etc., use the piezoelectric effect of the substrate material to convert the electrical signal into an acoustic signal through an input interdigital transducer (IDT), and confine it to the surface of the substrate to propagate, and the output interdigital transducing The sound signal is restored to the electrical signal number 09413103# single number A0101 1013090155-0 page 3 / 13 pages 1364225 On March 12, 101, the shuttle is replacing the page to realize the electro-acoustic-electrical transformation process and complete the telecommunication process. , to obtain electronic devices for various purposes. The effect of the reflector is to reflect the energy lost at the transducer end back into the transducer. The geometry of the interdigital transducers on a piezoelectric substrate, such as the height, pitch, and number of the electrodes, plays an important role in the signal processing and frequency response characteristics of a surface acoustic wave component. Designers of surface acoustic wave components typically focus on the geometry of the surface acoustic wave component and the choice of materials used in the piezoelectric substrate as the surface acoustic wave component achieves the desired frequency response for operation. However, conventional surface acoustic wave elements having an interdigital transducer whose electrodes are uniformly overlapping electrodes are not designed to effectively reduce the insertion loss of the surface acoustic wave element. SUMMARY OF THE INVENTION [0004] In view of the above, it is necessary to provide a surface acoustic wave element having a low insertion loss and a high degree of design freedom. [0005] In addition, it is necessary to provide a method of fabricating a surface acoustic wave element having a low insertion loss and a high degree of design freedom. [0006] A surface acoustic wave device comprising a piezoelectric substrate, a first transducer and a second transducer, wherein the first transducer and the second transducer are disposed on the piezoelectric substrate And the first transducer is acoustically coupled to the second transducer; wherein the at least one transducer comprises a first electrode bus bar and a second electrode bus bar, the first electrode bus bar and the second electrode The mother strips are respectively provided with two electrodes, and the two electrodes of the first electrode mother strip are respectively arranged in a spiral shape with the two electrodes of the second electrode mother strip. [0007] A method for fabricating a surface acoustic wave device, comprising the steps of: providing a substrate; sputtering a piezoelectric film layer on a surface of the substrate; applying a photoresist layer on the surface of the piezoelectric film layer; Covering the surface of the photoresist layer; 1013090155-0 09413103#单号A〇101 Page 4 of 13 1364225 __ ιοί年.03$ 12-day correction replacement page illuminates the reticle with light, the photoresist Forming an exposure area on the surface; after removing the mask, removing the exposure photoresist of the exposed area to expose a portion of the piezoelectric film layer, the exposed portion of the piezoelectric film layer is spiral; and remaining photoresist and road exit It. A conductive metal film is recorded on the surface of the scratched piezoelectric film layer; and the remaining photoresist and the conductive metal film layer attached thereto are washed away. Compared with the prior art, the electrodes of the surface acoustic wave member are arranged to be in a spiral shape so that the overlapping length thereof is long, and the insertion loss can be effectively reduced. In addition, parameters such as the length, width and spacing of the spiral electrode can be continuously changed in design, thereby controlling parameters such as insertion loss, bandwidth and surface acoustic wave velocity of the surface acoustic wave component, thereby improving surface acoustic wave components and applications thereof. The design freedom of SiS. [Embodiment] A preferred embodiment of the present invention discloses a surface acoustic wave component. Referring to the first figure, the surface acoustic wave component 1 includes a substrate 10, a piezoelectric film layer 20, a gastric replacement device 30, and a second embodiment. Transducer 40. The piezoelectric film layer 2, the first transducer 30 and the second transducer 4 are disposed on the substrate 1A, and the first transducer 30 and the second transducer 4 are coupled to each other. [0010] The substrate 1G is a rectangular thin plate made of a dream material. The piezoelectric film layer 2 is formed on the upper surface of the substrate 1 , and the piezoelectric film layer 2 is made of zinc oxide, lithium niobate (LiNb〇x), lithium titanate (UTi〇x) or kinetic acid. Made of lithium (LiTaOx) and other materials. [0011] The first transducer 30 and the second transducer 4 are arranged side by side on the upper surface of the piezoelectric film layer 2A. The first transducer 3 has a first electrode strip 32 and a second electrode strip 34, and the first electrode strip 32 and the second electrode strip 34 are disposed in parallel. The first electrode bus bar 32 is connected with a first electrode 321 and a second electrode 09413103# single number A01 〇 l page 5 / total 13 pages ' 1013090155-0 1364225 _ 101 years. March 12th to replace the page pole A third electrode 34b-fourth electrode 343 and a grounding terminal are connected to the second electrode busbar 34 of the 323 and the electrical signal input terminal 36. The materials of the four electrodes can be gold, silver or copper. The first electrode 321 is disposed opposite to the third electrode ,, and is coaxially arranged to form a spiral shape. The second electrode 323 and the fourth electrode 343 are disposed opposite each other and are coaxially arranged to form a spiral shape, wherein each group of the spiral electrode phases Preferably, the distance between adjacent two isotropic electrodes is a surface acoustic wave wavelength, and the distance between adjacent two opposite electrodes is preferably half a surface acoustic wave wavelength. The electrical signal input terminal 36 is configured to receive the first-transmission (four) external electrical signal. The ground terminal 38 is used to ground the first-transmission (four). [0012] The second transducer 40 has a second thunder and a negative electrode brace 42 and a fourth electrode bus bar 44. The third electrode bus bar 42 and the fourth electrode bus bar 44 are disposed in parallel. The third electrode bus bar 42 is connected with a fifth electrode 421, a sixth electrode (2) and a telecommunication output terminal 46. The fourth electrode bus bar 44 is connected with a seventh electrode 441, an eighth electrode 443 and a ground. End 48. The material of the four electrodes can be gold 'silver, copper or aluminum. The fifth electrode 421 and the seventh electrode 441 are disposed opposite to each other and are arranged in a spiral shape. The sixth electrode 423 and the eighth electrode 443 are disposed opposite each other, and are coaxially arranged to form a spiral shape, wherein each group of the spiral electrode phases Preferably, the distance between adjacent two isotropic electrodes is a surface acoustic wave wavelength, and the distance between adjacent two opposite electrodes is preferably half a surface acoustic wave wavelength. The signal wheel output 46 is used to output the electrical signal of the second transducer 4, and the ground terminal 48 is used to ground the second transducer 4. [0013] When the surface acoustic wave element 1 is in operation, the electrical signal input terminal 36 of the first transducer 30 receives an external electrical signal. Since the piezoelectric thin film layer 2 has a piezoelectric characteristic, the spiral electrode of the first transducer 30 The received electrical signal is converted into a surface acoustic wave, and the surface acoustic wave propagates along the piezoelectric film layer 2 to the second transducer 1013090155-0 09413103# single number A01〇l δ page/total 13 page 1.364225 101 years. On March 12, the shuttle is replacing page 40. The spiral electrode of the second transducer 40 converts the surface acoustic wave into an electrical signal, which is output by the electrical signal output terminal 46 of the second transducer 40. [0014] The electrodes of the surface acoustic wave device disclosed in the preferred embodiment of the present invention are alternately wound into a spiral shape, so that the overlapping length thereof is long, and the insertion loss can be effectively reduced. In addition, the parameters such as the length, width and spacing of the spiral electrode of the surface acoustic wave element can be continuously changed in design, thereby controlling parameters such as insertion loss, bandwidth and surface acoustic wave velocity of the surface acoustic wave element, thereby improving surface acoustic wave components and The design freedom of its application system. [0015] Referring to FIG. 2, the method for fabricating the surface acoustic wave device 1 includes the following steps: [0016] First, a substrate 10 is provided; then the germanium substrate 10 is placed in a vacuum chamber to form zinc oxide. (ZnOx), LiNbOx, LiTiOx or LiTaOx are dry materials, and argon (Ar) and oxygen are used as sputtering gases to splash on the surface of the substrate 10. The piezoelectric film layer 20 is plated, and the clock-breaking method may be reactive DC or laser reactive sputtering; a photoresist layer 50 is coated on the surface of the germanium film layer 20. Then, a reticle (not shown) is placed on the surface of the photoresist layer 50; the reticle is irradiated with laser light or ultraviolet light to form an exposure area on the surface of the photoresist; after the reticle is removed, the exposed light is exposed The resist layer 50 is placed in the developing solution, and the exposure photoresist 501 of the exposed region is removed to expose a portion of the piezoelectric film layer 201; then the surface of the remaining photoresist and the exposed portion of the piezoelectric film layer 201 is plated by sputtering. a metal film 60, which may be gold, silver, copper or aluminum; wash away residual photoresist and adhere thereto The metal film layer 601, the remaining metal film layer is the electrode of the first transducer 30 and the second transducer 40, the first transducing Q94131Q3 production number Α 0101 page 7 / total 13 pages 1013090155-0 1364225 __ 101 years. On March 12th, the four electrodes of the nuclear replacement page 30 are arranged side by side in a spiral shape, and the four electrodes of the second transducer 40 are arranged side by side in a spiral shape. The surface acoustic wave element 1 described above has been produced. [0017] In summary, the present invention complies with the requirements of the invention patent, and submits a patent application according to law. However, the above description is only the preferred embodiment of the present invention, and all equivalents, modifications, and variations made by those skilled in the art will be included in the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0018] The first drawing is a schematic view of a three-dimensional structure of a surface acoustic wave device according to a preferred embodiment of the present invention, and the second drawing is a schematic diagram of a manufacturing process of a surface acoustic wave device according to a preferred embodiment of the present invention. . [Major component symbol description] [0020] Surface acoustic wave component: 1 [0021] Piezoelectric film layer: 20 [0022] First electrode mother bar: 32 [0023] Electrical signal input terminal: 36 [0024] Second transducer :40 [0025] Fourth electrode mother bar: 44 [0026] Ground terminal: 48 [0027] Metal film: 60 [0028] Substrate: 10 09413103# Single number A 〇 101 Page 8 / Total 13 pages 1013090155- 0 1364225 [0029] First transducer: 30 [0030] Second electrode busbar: 34 [0031] Ground terminal: 38 [0032] Third electrode busbar: 42 [0033] Electrical signal output: 46 [0034] ] Photoresist layer: 50 09413103^^^ A〇101 Page 9 / Total 13 pages 101 years. March 12th revised replacement page 1013090155-0